| Year |
Citation |
Score |
| 2020 |
Poklonski NA, Dzeraviaha AN, Vyrko SA. Spin-Phonon Magnetic Resonance of Conduction Electrons in Indium Antimonide Crystals Journal of Applied Spectroscopy. 87: 652-661. DOI: 10.1007/S10812-020-01050-X |
0.343 |
|
| 2018 |
Poklonski NA, Vyrko SA, Dzeraviaha AN. Quasi-classical model of the static electrical conductivity of heavily doped degenerate semiconductors at low temperatures Semiconductors. 52: 692-701. DOI: 10.1134/S1063782618060192 |
0.469 |
|
| 2018 |
Siahlo AI, Poklonski NA, Lebedev AV, Lebedeva IV, Popov AM, Vyrko SA, Knizhnik AA, Lozovik YE. Structure and energetics of carbon, hexagonal boron nitride, and carbon/hexagonal boron nitride single-layer and bilayer nanoscrolls Physical Review Materials. 2: 36001. DOI: 10.1103/Physrevmaterials.2.036001 |
0.313 |
|
| 2018 |
Hieu NN, Ilyasov VV, Vu TV, Poklonski NA, Phuc HV, Phuong LTT, Hoi BD, Nguyen CV. First principles study of optical properties of molybdenum disulfide: From bulk to monolayer Superlattices and Microstructures. 115: 10-18. DOI: 10.1016/J.Spmi.2018.01.012 |
0.335 |
|
| 2018 |
Phuc HV, Hieu NN, Hoi BD, Hieu NV, Thu TV, Hung NM, Ilyasov VV, Poklonski NA, Nguyen CV. Tuning the Electronic Properties, Effective Mass and Carrier Mobility of MoS 2 Monolayer by Strain Engineering: First-Principle Calculations Journal of Electronic Materials. 47: 730-736. DOI: 10.1007/S11664-017-5843-8 |
0.351 |
|
| 2017 |
Hieu NN, Phuc HV, Ilyasov VV, Chien ND, Poklonski NA, Hieu NV, Nguyen CV. First-principles study of the structural and electronic properties of graphene/MoS2 interfaces Journal of Applied Physics. 122: 104301. DOI: 10.1063/1.5001558 |
0.345 |
|
| 2017 |
Nguyen CV, Hieu NN, Duque CA, Poklonski NA, Ilyasov VV, Hieu NV, Dinh L, Quang QK, Tung LV, Phuc HV. Linear and nonlinear magneto-optical absorption coefficients and refractive index changes in graphene Optical Materials. 69: 328-332. DOI: 10.1016/J.Optmat.2017.04.053 |
0.308 |
|
| 2017 |
Poklonski NA, Dzeraviaha AN, Vyrko SA, Siahlo AI. Radiative Decay of a Trion in a Quantum Well of a Semiconductor Heterostructure Journal of Applied Spectroscopy. 84: 611-619. DOI: 10.1007/S10812-017-0518-Z |
0.324 |
|
| 2016 |
Poklonski NA, Vyrko SA, Poklonskaya ON, Zabrodskii AG. Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga) Semiconductors. 50: 722-734. DOI: 10.1134/S1063782616060191 |
0.421 |
|
| 2016 |
Poklonski NA, Vyrko SA, Kovalev AI, Zabrodskii AG. A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors Semiconductors. 50: 299-308. DOI: 10.1134/S1063782616030192 |
0.378 |
|
| 2016 |
Poklonski NA, Vyrko SA, Poklonskaya ON, Kovalev AI, Zabrodskii AG. Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond Journal of Applied Physics. 119: 245701. DOI: 10.1063/1.4954281 |
0.398 |
|
| 2016 |
Shuba MV, Paddubskaya AG, Kuzhir PP, Maksimenko SA, Valusis G, Poklonski NA, Bellucci S, Kenanakis G, Kafesaki M. Temperature induced modification of the mid-infrared response of single-walled carbon nanotubes Journal of Applied Physics. 119: 104303. DOI: 10.1063/1.4943499 |
0.331 |
|
| 2016 |
Poklonski NA, Gorbachuk NI, Shpakovski SV, Filipenia VA, Turtsevich AS, Shvedov SV, Quang NV, Binh NTT, Skuratov VA, Wieck AD. DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions Modern Electronic Materials. 2: 48-50. DOI: 10.1016/J.Moem.2016.09.001 |
0.347 |
|
| 2015 |
Poklonski NA, Gorbachuk NI, Nha VQ, Shpakovski SV, Filipenya VA, Skuratov VA, Kotunowicz TN, Kukharchyk N, Becker HW, Wieck A. Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes Acta Physica Polonica A. 128: 891-893. DOI: 10.12693/Aphyspola.128.891 |
0.365 |
|
| 2015 |
Lebedeva IV, Popov AM, Knizhnik AA, Lozovik YE, Poklonski NA, Siahlo AI, Vyrko SA, Ratkevich SV. Tunneling conductance of telescopic contacts between graphene layers with and without dielectric spacer Computational Materials Science. 109: 240-247. DOI: 10.1016/J.Commatsci.2015.07.006 |
0.308 |
|
| 2015 |
Siahlo AI, Poklonski NA, Lastovski SB, Presting H, Sobolev NA. Influence of electron irradiation on p–n junctions in SiGe superlattices Physica Status Solidi B-Basic Solid State Physics. 252: 153-158. DOI: 10.1002/Pssb.201400196 |
0.344 |
|
| 2014 |
Popov AM, Lebedeva IV, Knizhnik AA, Lozovik YE, Poklonski NA, Siahlo AI, Vyrko SA, Ratkevich SV. Force and magnetic field sensor based on measurement of tunneling conductance between ends of coaxial carbon nanotubes Computational Materials Science. 92: 84-91. DOI: 10.1016/J.Commatsci.2014.05.020 |
0.304 |
|
| 2013 |
Poklonski NA, Gorbachuk NI, Nha VQ, Tarasik MI, Shpakovski SV, Filipenia VA, Skuratov VA, Wieck A, Kołtunowicz TN. Current-Voltage Characteristic Features of Diodes Irradiated with 170~MeV Xenon Ions Acta Physica Polonica A. 123: 926-928. DOI: 10.12693/Aphyspola.123.926 |
0.303 |
|
| 2013 |
Poklonski NA, Siahlo AI, Vyrko SA, Popov AM, Lozovik YE. Tunneling Current Between Graphene Layers Physics. 135-138. DOI: 10.1142/9789814460187_0033 |
0.332 |
|
| 2012 |
Poklonski NA, Kislyakov EF, Vyrko SA, Bubel ON, Ratkevich SV. Electronic band structure and magnetic states of zigzag graphene nanoribbons: quantum chemical calculations Journal of Nanophotonics. 6: 61712-61712. DOI: 10.1117/1.Jnp.6.061712 |
0.344 |
|
| 2011 |
Poklonski NA, Vyrko SA, Poklonskaya ON, Zabrodskii AG. Transition temperature from band to hopping direct current conduction in crystalline semiconductors with hydrogen-like impurities: Heat versus Coulomb attraction Journal of Applied Physics. 110: 123702. DOI: 10.1063/1.3667287 |
0.394 |
|
| 2010 |
Poklonski NA, Gorbachuk NI, Shpakovski SV, Wieck A. Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation Technical Physics. 55: 1463-1471. DOI: 10.1134/S1063784210100117 |
0.37 |
|
| 2010 |
Poklonski NA, Gorbachuk NI, Shpakovski SV, Lastovskii SB, Wieck A. Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons Semiconductors. 44: 380-384. DOI: 10.1134/S1063782610030188 |
0.337 |
|
| 2010 |
Poklonski NA, Vyrko SA, Zabrodskii AG. Quasiclassical description of the nearest-neighbor hopping dc conduction via hydrogen-like donors in intermediately compensated GaAs crystals Semiconductor Science and Technology. 25: 85006. DOI: 10.1088/0268-1242/25/8/085006 |
0.388 |
|
| 2010 |
Kocherzhenko AA, Grozema FC, Vyrko SA, Poklonski NA, Siebbeles LDA. Simulation of hopping transport based on charge carrier localization times derived for a two-level system Journal of Physical Chemistry C. 114: 20424-20430. DOI: 10.1021/Jp104673H |
0.708 |
|
| 2010 |
Poklonski NA, Gorbachuk NI, Shpakovski SV, Filipenia VA, Lastovskii SB, Skuratov VA, Wieck AD, Markevich VP. Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions Microelectronics Reliability. 50: 813-820. DOI: 10.1016/J.Microrel.2010.02.007 |
0.358 |
|
| 2009 |
Poklonski NA, Gusakov GA, Bayev VG, Lapchuk NM. Optical and paramagnetic properties of synthetic diamond crystals irradiated with electrons and annealed Semiconductors. 43: 568-576. DOI: 10.1134/S1063782609050042 |
0.322 |
|
| 2009 |
Poklonski NA, Kislyakov EF, Hieu NN, Bubel ON, Vyrko SA, Phong TC. Electronic energy band structure of uniaxially deformed (5,5) armchair carbon nanotube Molecular Simulation. 35: 681-684. DOI: 10.1080/08927020802680711 |
0.329 |
|
| 2009 |
Poklonski NA, Vyrko SA, Zabrodskii AG. Model of hopping dc conductivity via nearest neighbor boron atoms in moderately compensated diamond crystals Solid State Communications. 149: 1248-1253. DOI: 10.1016/J.Ssc.2009.05.031 |
0.402 |
|
| 2009 |
Poklonski NA, Gorbachuk NI, Shpakovski SV, Filipenia VA, Skuratov VA, Wieck A. Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250 MeV krypton implantation Physica B-Condensed Matter. 404: 4667-4670. DOI: 10.1016/J.Physb.2009.08.129 |
0.358 |
|
| 2009 |
Poklonski NA, Vyrko SA, Poklonskaya ON, Zabrodskii AG. A model of ionization equilibrium and Mott transition in boron doped crystalline diamond Physica Status Solidi B-Basic Solid State Physics. 246: 158-163. DOI: 10.1002/Pssb.200844285 |
0.412 |
|
| 2008 |
Poklonski NA, Vyrko SA, Zabrodskii AG. Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects) Semiconductors. 42: 1388-1394. DOI: 10.1134/S1063782608120038 |
0.391 |
|
| 2008 |
Ershova OV, Lozovik YE, Popov AM, Bubel ON, Kislyakov EF, Poklonski NA. NEMS Based on Carbon Nanotube: New Method of Control Fullerenes Nanotubes and Carbon Nanostructures. 16: 374-378. DOI: 10.1080/15363830802269281 |
0.309 |
|
| 2008 |
Poklonski NA, Hieu NN, Kislyakov EF, Vyrko SA, Siahlo AI, Popov AM, Lozovik YE. Interwall conductance in double-walled armchair carbon nanotubes Physics Letters A. 372: 5706-5711. DOI: 10.1016/J.Physleta.2008.06.085 |
0.332 |
|
| 2008 |
Poklonski NA, Gorbachuk NI, Shpakovski SV, Petrov AV, Lastovskii SB, Fink D, Wieck A. Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 266: 5007-5012. DOI: 10.1016/J.Nimb.2008.09.001 |
0.401 |
|
| 2007 |
Poklonski NA, Vyrko SA, Zabrodskii AG. Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level Semiconductors. 41: 1300-1306. DOI: 10.1134/S1063782607110048 |
0.392 |
|
| 2007 |
Poklonski NA, Vyrko SA, Zabrodskii AG. Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B) Semiconductors. 41: 30-36. DOI: 10.1134/S1063782607010083 |
0.395 |
|
| 2007 |
Poklonski NA, Lapchuk NM, Khomich AV, Fan-Xiu L, Wei-Zhong T, Ralchenko VG, Vlasov II, Chukichev MV, Munkhtsetseg S. Nitrogen-Doped Chemical Vapour Deposited Diamond: a New Material for Room-Temperature Solid State Maser Chinese Physics Letters. 24: 2088-2090. DOI: 10.1088/0256-307X/24/7/083 |
0.316 |
|
| 2007 |
Poklonski NA, Kocherzhenko AA, Vyrko SA, Vlassov AT. A comparison of two-particle models for conduction electron scattering on hydrogen-like impurity ions in non-degenerate semiconductors Physica Status Solidi (B). 244: 3703-3710. DOI: 10.1002/Pssb.200642528 |
0.722 |
|
| 2006 |
Poklonski NA, Shpakovski SV, Gorbachuk NI, Lastovskii SB. Negative capacitance (impedance of the inductive type) of silicon p +-n junctions irradiated with fast electrons Semiconductors. 40: 803-807. DOI: 10.1134/S1063782606070128 |
0.384 |
|
| 2006 |
Poklonski NA, Vyrko SA, Zabrodskiĭ AG. The dipole model of narrowing of the energy gap between the Hubbard bands in slightly compensated semiconductors Semiconductors. 40: 394-400. DOI: 10.1134/S106378260604004X |
0.387 |
|
| 2006 |
Poklonski NA, Kocherzhenko AA, Benediktovitch AI, Mitsianok VV, Zaitsev AM. Simulation of dc conductance of two-dimensional heterogeneous system: Application to carbon wires made by ion irradiation on polycrystalline diamond Physica Status Solidi (B) Basic Research. 243: 1212-1218. DOI: 10.1002/Pssb.200541079 |
0.712 |
|
| 2005 |
Poklonski NA, Lapchuk TM, Gorbachuk NI, Nikolaenko VA, Bachuchin IV. Nanostructuring of crystalline grains of natural diamond using ionizing radiation Semiconductors. 39: 894-897. DOI: 10.1134/1.2010681 |
0.355 |
|
| 2005 |
Poklonski NA, Vyrko SA, Zabrodskii AG. Fluctuation model of the high-frequency hopping electrical conductivity of moderately compensated semiconductors with hydrogenic impurities Physics of the Solid State. 47: 1236-1244. DOI: 10.1134/1.1992598 |
0.423 |
|
| 2004 |
Poklonski NA, Lapchuk NM, Lapchuk TM. Inverted EPR signal from nitrogen defects in a synthetic diamond single crystal at room temperature Jetp Letters. 80: 748-751. DOI: 10.1134/1.1868799 |
0.302 |
|
| 2004 |
Poklonski NA, Vyrko SA, Kocherzhenko AA. Ramo-Shockley Relation for a Series RCL Circuit Technical Physics. 49: 1469-1472. DOI: 10.1134/1.1826192 |
0.689 |
|
| 2004 |
Poklonski NA, Vyrko SA, Zabrodskii AG. Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities Physics of the Solid State. 46: 1101-1106. DOI: 10.1134/1.1767252 |
0.347 |
|
| 2003 |
Poklonski NA, Vyrko SA, Yatskevich VI, Kocherzhenko AA. A semiclassical approach to Coulomb scattering of conduction electrons on ionized impurities in nondegenerate semiconductors Journal of Applied Physics. 93: 9749-9752. DOI: 10.1063/1.1573735 |
0.725 |
|
| 2002 |
Poklonski NA, Vyrko SA. Nonlinear screening of the field of a dopant ion on the metal side of the Mott phase transition in semiconductors Physics of the Solid State. 44: 1235-1240. DOI: 10.1134/1.1494615 |
0.354 |
|
| 2001 |
Poklonski NA, Lopatin SY. A lattice model of thermopower in hopping conduction: Application to neutron-doped crystalline germanium Physics of the Solid State. 43: 2219-2228. DOI: 10.1134/1.1427945 |
0.399 |
|
| 2001 |
Poklonski NA, Kislyakov EF, Sagaidak DI, Siaglo AI, Fedoruk GG. One-dimensional quantum transport in lead phthalocyanine nanostructures Technical Physics Letters. 27: 180-182. DOI: 10.1134/1.1359818 |
0.369 |
|
| 2001 |
Poklonski NA, Siaglo AI. Electrostatic model of band-gap renormalization and the photoluminescence line shape in a GaAs/AlGaAs two-dimensional layer at a high excitation level Physics of the Solid State. 43: 157-165. DOI: 10.1134/1.1340202 |
0.365 |
|
| 1998 |
Poklonski NA, Denisenko AV, Lopatin SY, Siaglo AI. Ionized Impurity Scattering of Charge Carriers in Crystalline Semiconductors Physica Status Solidi B-Basic Solid State Physics. 206: 713-721. DOI: 10.1002/(Sici)1521-3951(199804)206:2<713::Aid-Pssb713>3.0.Co;2-V |
0.437 |
|
| 1986 |
Klimkovich BV, Poklonski NA, Stelmakh VF. The temperature dependence of the AC hopping conductivity of lightly compensated semiconductors Physica Status Solidi B-Basic Solid State Physics. 134: 763-770. DOI: 10.1002/Pssb.2221340237 |
0.332 |
|
| 1983 |
Poklonski NA, Stelmakh VF. Screening of electrostatic fields in crystalline semiconductors by electrons hopping over defects Physica Status Solidi B-Basic Solid State Physics. 117: 93-99. DOI: 10.1002/Pssb.2221170109 |
0.343 |
|
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