| Year |
Citation |
Score |
| 2020 |
Abelson JR, Girolami GS. New strategies for conformal, superconformal, and ultrasmooth films by low temperature chemical vapor deposition Journal of Vacuum Science & Technology A. 38: 030802. DOI: 10.1116/6.0000035 |
0.472 |
|
| 2020 |
Zhang ZV, Liu S, Girolami GS, Abelson JR. Area-selective chemical vapor deposition of cobalt from dicobalt octacarbonyl: Enhancement of dielectric-dielectric selectivity by adding a coflow of NH3 Journal of Vacuum Science & Technology A. 38: 033401. DOI: 10.1116/1.5144501 |
0.348 |
|
| 2019 |
Mohimi E, Zhang ZV, Mallek JL, Liu S, Trinh BB, Shetty PP, Girolami GS, Abelson JR. Low temperature chemical vapor deposition of superconducting vanadium nitride thin films Journal of Vacuum Science & Technology A. 37: 031509. DOI: 10.1116/1.5088050 |
0.514 |
|
| 2019 |
Mohimi E, Canova K, Zhang Z, Liu S, Mallek JL, Girolami GS, Abelson JR. Low temperature chemical vapor deposition of superconducting molybdenum carbonitride thin films Journal of Vacuum Science & Technology A. 37: 021503. DOI: 10.1116/1.5079805 |
0.48 |
|
| 2019 |
Talukdar TK, Girolami GS, Abelson JR. Seamless fill of deep trenches by chemical vapor deposition: Use of a molecular growth inhibitor to eliminate pinch-off Journal of Vacuum Science & Technology A. 37: 021509. DOI: 10.1116/1.5068684 |
0.317 |
|
| 2019 |
Humood M, Ozkan T, Mohimi E, Abelson JR, Polycarpou AA. A framework for modeling the nanomechanical and nanotribological properties of high temperature HfBxCy coatings Wear. 280-288. DOI: 10.1016/J.Wear.2018.12.009 |
0.475 |
|
| 2018 |
Sandin C, Talukdar T, Abelson JR, Tawfick S. Bottom-Up Synthesis And Mechanical Behavior Of Refractory Coatings Made Of CNT-Hafnium Diboride Composites. Acs Applied Materials & Interfaces. PMID 30543416 DOI: 10.1021/Acsami.8B18840 |
0.411 |
|
| 2018 |
Zhang P, Zhang Z, Abelson JR, Girolami GS. Chemical vapor deposition of magnetic iron-cobalt alloy thin films: Use of ammonia to stabilize growth from carbonyl precursors Journal of Vacuum Science & Technology A. 36: 061505. DOI: 10.1116/1.5045671 |
0.467 |
|
| 2018 |
Talukdar TK, Liu S, Zhang Z, Harwath F, Girolami GS, Abelson JR. Conformal MgO film grown at high rate at low temperature by forward-directed chemical vapor deposition Journal of Vacuum Science & Technology A. 36: 051504. DOI: 10.1116/1.5040855 |
0.547 |
|
| 2018 |
Talukdar TK, Wang WB, Girolami GS, Abelson JR. Superconformal coating and filling of deep trenches by chemical vapor deposition with forward-directed fluxes Journal of Vacuum Science & Technology A. 36: 051513. DOI: 10.1116/1.5038100 |
0.406 |
|
| 2018 |
Mohimi E, Zhang ZV, Liu S, Mallek JL, Girolami GS, Abelson JR. Area selective CVD of metallic films from molybdenum, iron, and ruthenium carbonyl precursors: Use of ammonia to inhibit nucleation on oxide surfaces Journal of Vacuum Science & Technology A. 36: 041507. DOI: 10.1116/1.5023236 |
0.414 |
|
| 2016 |
Mohimi E, Trinh BB, Babar S, Girolami GS, Abelson JR. Chemical vapor deposition of MnxNy films from bis(2,2,6,6-tetramethylpiperidido)manganese(II) and ammonia Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 34: 060603. DOI: 10.1116/1.4964839 |
0.509 |
|
| 2016 |
Zhang P, Mohimi E, Talukdar TK, Abelson JR, Girolami GS. Iron CVD from iron pentacarbonyl: Growth inhibition by CO dissociation and use of ammonia to restore constant growth Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 34: 051518. DOI: 10.1116/1.4961942 |
0.335 |
|
| 2015 |
Babar S, Mohimi E, Trinh B, Girolami GS, Abelson JR. Surface-selective chemical vapor deposition of copper films through the use of a molecular inhibitor Ecs Journal of Solid State Science and Technology. 4: N60-N63. DOI: 10.1149/2.0061507Jss |
0.418 |
|
| 2015 |
Zhang P, Babar S, Abelson JR, Sahoo S, Zhu M, Kautzky M, Davis LM, Girolami GS. Iron-cobalt alloy thin films with high saturation magnetizations grown by conformal metalorganic CVD Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4935449 |
0.455 |
|
| 2015 |
Chowdhury S, Polychronopoulou K, Cloud A, Abelson JR, Polycarpou AA. Nanomechanical and nanotribological behaviors of hafnium boride thin films Thin Solid Films. 595: 84-91. DOI: 10.1016/J.Tsf.2015.10.030 |
0.836 |
|
| 2015 |
Mohimi E, Ozkan T, Babar S, Polycarpou A, Abelson J. Conformal growth of low friction HfBxCy hard coatings Thin Solid Films. 592: 182-188. DOI: 10.1016/J.Tsf.2015.09.018 |
0.492 |
|
| 2014 |
Nguyen D, Mallek J, Cloud AN, Abelson JR, Girolami GS, Lyding J, Gruebele M. The energy landscape of glassy dynamics on the amorphous hafnium diboride surface. The Journal of Chemical Physics. 141: 204501. PMID 25429948 DOI: 10.1063/1.4901132 |
0.794 |
|
| 2014 |
Li TT, Bogle SN, Abelson JR. Quantitative fluctuation electron microscopy in the STEM: methods to identify, avoid, and correct for artifacts. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 20: 1605-18. PMID 25033350 DOI: 10.1017/S1431927614012756 |
0.777 |
|
| 2014 |
Babar S, Davis LM, Zhang P, Mohimi E, Girolami GS, Abelson JR. Chemical vapor deposition of copper: Use of a molecular inhibitor to afford uniform nanoislands or smooth films Ecs Journal of Solid State Science and Technology. 3: Q79-Q83. DOI: 10.1149/2.009405Jss |
0.468 |
|
| 2014 |
Babar S, Li TT, Abelson JR. Role of nucleation layer morphology in determining the statistical roughness of CVD-grown thin films Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 32: 060601. DOI: 10.1116/1.4895106 |
0.478 |
|
| 2014 |
Wang WB, Yanguas-Gil A, Yang Y, Kim DY, Girolami GS, Abelson JR. Chemical vapor deposition of TiO2thin films from a new halogen-free precursor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4894454 |
0.519 |
|
| 2014 |
Wang WB, Chang NN, Codding TA, Girolami GS, Abelson JR. Superconformal chemical vapor deposition of thin films in deep features Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4893930 |
0.461 |
|
| 2014 |
Cloud AN, Davis LM, Girolami GS, Abelson JR. Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert -butyl)amido]metal(II) precursors and ammonia Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4865903 |
0.825 |
|
| 2014 |
Wang WB, Abelson JR. Filling high aspect ratio trenches by superconformal chemical vapor deposition: Predictive modeling and experiment Journal of Applied Physics. 116. DOI: 10.1063/1.4902158 |
0.317 |
|
| 2014 |
Darmawikarta K, Raoux S, Bishop SG, Abelson JR. Nanoscale order and crystallization in nitrogen-alloyed amorphous GeTe Applied Physics Letters. 105: 191903. DOI: 10.1063/1.4901534 |
0.821 |
|
| 2014 |
Lee B, Darmawikarta K, Raoux S, Shih Y, Zhu Y, Bishop SG, Abelson JR. Distribution of nanoscale nuclei in the amorphous dome of a phase change random access memory Applied Physics Letters. 104: 071907. DOI: 10.1063/1.4865586 |
0.34 |
|
| 2014 |
Lee B, Shelby RM, Raoux S, Retter CT, Burr GW, Bogle SN, Darmawikarta K, Bishop SG, Abelson JR. Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge2Sb2Te5 and AgInSbTe Journal of Applied Physics. 115: 063506. DOI: 10.1063/1.4865295 |
0.804 |
|
| 2014 |
Lee J, Polychronopoulou K, Cloud AN, Abelson JR, Polycarpou AA. Shear strength measurements of hafnium diboride thin solid films Wear. 318: 168-176. DOI: 10.1016/J.Wear.2014.06.017 |
0.836 |
|
| 2013 |
Arpin KA, Losego MD, Cloud AN, Ning H, Mallek J, Sergeant NP, Zhu L, Yu Z, Kalanyan B, Parsons GN, Girolami GS, Abelson JR, Fan S, Braun PV. Three-dimensional self-assembled photonic crystals with high temperature stability for thermal emission modification. Nature Communications. 4: 2630. PMID 24129680 DOI: 10.1038/Ncomms3630 |
0.773 |
|
| 2013 |
Li TT, Darmawikarta K, Abelson JR. Quantifying nanoscale order in amorphous materials via scattering covariance in fluctuation electron microscopy. Ultramicroscopy. 133: 95-100. PMID 23933598 DOI: 10.1016/J.Ultramic.2013.06.017 |
0.811 |
|
| 2013 |
Spicer TS, Spicer CW, Cloud AN, Davis LM, Girolami GS, Abelson JR. Low-temperature CVD of η-Mn3N2-x from bis[di(tert-butyl)amido]manganese(II) and ammonia Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4799036 |
0.844 |
|
| 2013 |
Tony Li T, Hoon Lee T, Elliott SR, Abelson JR. Preferred orientation of nanoscale order at the surface of amorphous Ge2Sb2Te5 films Applied Physics Letters. 103: 201907. DOI: 10.1063/1.4831973 |
0.469 |
|
| 2013 |
Darmawikarta K, Li T, Bishop SG, Abelson JR. Two forms of nanoscale order in amorphous GexSe1−x alloys Applied Physics Letters. 103: 131908. DOI: 10.1063/1.4822268 |
0.784 |
|
| 2013 |
Darmawikarta K, Lee B, Shelby RM, Raoux S, Bishop SG, Abelson JR. Quasi-equilibrium size distribution of subcritical nuclei in amorphous phase change AgIn-Sb2Te Journal of Applied Physics. 114: 034904. DOI: 10.1063/1.4816098 |
0.81 |
|
| 2013 |
Wang WB, Yang Y, Yanguas-Gil A, Chang NN, Girolami GS, Abelson JR. Highly conformal magnesium oxide thin films by low-temperature chemical vapor deposition from Mg(H3BNMe2BH3) 2 and water Applied Physics Letters. 102. DOI: 10.1063/1.4795860 |
0.511 |
|
| 2013 |
Babar S, Kumar N, Zhang P, Abelson JR, Dunbar AC, Daly SR, Girolami GS. Growth inhibitor to homogenize nucleation and obtain smooth HfB2 thin films by chemical vapor deposition Chemistry of Materials. 25: 662-667. DOI: 10.1021/Cm303205U |
0.667 |
|
| 2012 |
Schmucker SW, Kumar N, Abelson JR, Daly SR, Girolami GS, Bischof MR, Jaeger DL, Reidy RF, Gorman BP, Alexander J, Ballard JB, Randall JN, Lyding JW. Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography. Nature Communications. 3: 935. PMID 22760634 DOI: 10.1038/Ncomms1907 |
0.599 |
|
| 2012 |
Darmawikarta K, Raoux S, Tchoulfian P, Li T, Abelson JR, Bishop SG. Evolution of subcritical nuclei in nitrogen-alloyed Ge2Sb2Te5 Journal of Applied Physics. 112: 124907. DOI: 10.1063/1.4770385 |
0.807 |
|
| 2012 |
Tayebi N, Yanguas-Gil A, Kumar N, Zhang Y, Abelson JR, Nishi Y, Ma Q, Rao VR. Hard HfB2 tip-coatings for ultrahigh density probe-based storage Applied Physics Letters. 101: 091909. DOI: 10.1063/1.4748983 |
0.555 |
|
| 2012 |
Lee WS, Cloud AN, Provine J, Tayebi N, Parsa R, Mitra S, Wong HSP, Abelson JR, Howe RT. CVD hafnium diboride as a contact material for nanoelectromechanical switches Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop. 437-440. |
0.747 |
|
| 2011 |
Yanguas-Gil A, Sperling BA, Abelson JR. Theory of light scattering from self-affine surfaces: Relationship between surface morphology and effective medium roughness Physical Review B. 84. DOI: 10.1103/Physrevb.84.085402 |
0.67 |
|
| 2011 |
Haberl B, Bogle SN, Li T, McKerracher I, Ruffell S, Munroe P, Williams JS, Abelson JR, Bradby JE. Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing Journal of Applied Physics. 110: 096104. DOI: 10.1063/1.3658628 |
0.823 |
|
| 2010 |
Ye W, Peña Martin PA, Kumar N, Daly SR, Rockett AA, Abelson JR, Girolami GS, Lyding JW. Direct writing of sub-5 nm hafnium diboride metallic nanostructures. Acs Nano. 4: 6818-24. PMID 20964393 DOI: 10.1021/Nn1018522 |
0.586 |
|
| 2010 |
Lee BS, Bishop SG, Abelson JR. Fluctuation transmission electron microscopy: detecting nanoscale order in disordered structures. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. 11: 2311-7. PMID 20623573 DOI: 10.1002/Cphc.201000153 |
0.632 |
|
| 2010 |
Daly SR, Kim do Y, Yang Y, Abelson JR, Girolami GS. Lanthanide N,N-dimethylaminodiboranates: highly volatile precursors for the deposition of lanthanide-containing thin films. Journal of the American Chemical Society. 132: 2106-7. PMID 20108908 DOI: 10.1021/Ja9098005 |
0.341 |
|
| 2010 |
Yang HS, Cahill DG, Liu X, Feldman JL, Crandall RS, Sperling BA, Abelson JR. Anomalously high thermal conductivity of amorphous Si deposited by hot-wire chemical vapor deposition Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.104203 |
0.761 |
|
| 2010 |
Chatterjee A, Kumar N, Abelson JR, Bellon P, Polycarpou AA. Nanowear of Hafnium Diboride thin films Tribology Transactions. 53: 731-738. DOI: 10.1080/10402001003753341 |
0.675 |
|
| 2010 |
Chatterjee A, Polycarpou AA, Abelson JR, Bellon P. Nanoscratch study of hard HfB2 thin films using experimental and finite element techniques Wear. 268: 677-685. DOI: 10.1016/J.Wear.2009.11.001 |
0.434 |
|
| 2010 |
Bogle SN, Nittala LN, Twesten RD, Voyles PM, Abelson JR. Size analysis of nanoscale order in amorphous materials by variable-resolution fluctuation electron microscopy Ultramicroscopy. 110: 1273-1278. DOI: 10.1016/J.Ultramic.2010.05.001 |
0.814 |
|
| 2009 |
Lee BS, Burr GW, Shelby RM, Raoux S, Rettner CT, Bogle SN, Darmawikarta K, Bishop SG, Abelson JR. Observation of the role of subcritical nuclei in crystallization of a glassy solid. Science (New York, N.Y.). 326: 980-4. PMID 19965508 DOI: 10.1126/Science.1177483 |
0.766 |
|
| 2009 |
Yanguas-Gil A, Kumar N, Yang Y, Abelson JR. Highly conformal film growth by chemical vapor deposition. II. Conformality enhancement through growth inhibition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 27: 1244-1248. DOI: 10.1116/1.3207746 |
0.598 |
|
| 2009 |
Yanguas-Gil A, Yang Y, Kumar N, Abelson JR. Highly conformal film growth by chemical vapor deposition. I. A conformal zone diagram based on kinetics Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 27: 1235-1243. DOI: 10.1116/1.3207745 |
0.642 |
|
| 2009 |
Kumar N, Yanguas-Gil A, Daly SR, Girolami GS, Abelson JR. Remote plasma treatment of Si surfaces: Enhanced nucleation in low-temperature chemical vapor deposition Applied Physics Letters. 95. DOI: 10.1063/1.3243980 |
0.627 |
|
| 2009 |
Kumar N, Noh W, Daly SR, Girolami GS, Abelson JR. Low temperature chemical vapor deposition of hafnium nitride - Boron nitride nanocomposite films Chemistry of Materials. 21: 5601-5606. DOI: 10.1021/Cm901774V |
0.686 |
|
| 2008 |
Kumar N, Yanguas-Gil A, Daly SR, Girolami GS, Abelson JR. Growth inhibition to enhance conformal coverage in thin film chemical vapor deposition. Journal of the American Chemical Society. 130: 17660-1. PMID 19067582 DOI: 10.1021/Ja807802R |
0.67 |
|
| 2008 |
Gallagher KG, Bass JD, Ahrens TJ, Fitzner M, Abelson JR. Shock temperature of stainless steel and a high pressure—high temperature constraint on thermal diffusivity of Al2O3 High‐Pressure Science and Technology. 309: 963-966. DOI: 10.1063/1.46195 |
0.318 |
|
| 2008 |
Chatterjee A, Kumar N, Abelson JR, Bellon P, Polycarpou AA. Nanoscratch and nanofriction behavior of hafnium diboride thin films Wear. 265: 921-929. DOI: 10.1016/J.Wear.2008.02.002 |
0.679 |
|
| 2008 |
Yang Y, Abelson JR. Epitaxial growth of HfB2(0001) on Si(001) by etching through a SiO2 layer Journal of Crystal Growth. 310: 3197-3202. DOI: 10.1016/J.Jcrysgro.2008.03.035 |
0.496 |
|
| 2007 |
Kim do Y, Yang Y, Abelson JR, Girolami GS. Volatile magnesium octahydrotriborate complexes as potential CVD precursors to MgB2. Synthesis and characterization of Mg(B3H8)2 and its etherates. Inorganic Chemistry. 46: 9060-6. PMID 17914810 DOI: 10.1021/Ic701037T |
0.325 |
|
| 2007 |
Lazarz TS, Yang Y, Kumar N, Kim DY, Noh W, Girolami GS, Abelson JR. Low temperature CVD of Ru from C6H8Ru(CO)3 Materials Research Society Symposium Proceedings. 990: 103-108. DOI: 10.1557/Proc-0990-B09-06 |
0.798 |
|
| 2007 |
Yang Y, Jayaraman S, Sperling B, Kim DY, Girolami GS, Abelson JR. In situ spectroscopic ellipsometry analyses of hafnium diboride thin films deposited by single-source chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 200-206. DOI: 10.1116/1.2409939 |
0.838 |
|
| 2007 |
Bogle SN, Voyles PM, Khare SV, Abelson JR. Quantifying nanoscale order in amorphous materials: Simulating fluctuation electron microscopy of amorphous silicon Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/45/455204 |
0.788 |
|
| 2007 |
Abelson J, Drabold D, Elliot S, Voyles P. Proceedings of the International Conference on Nanoscale Order in Amorphous and Partially Ordered Solids, Trinity College, Cambridge, UK, July 9–11, 2007 Journal of Physics: Condensed Matter. 19: 450301. DOI: 10.1088/0953-8984/19/45/450301 |
0.555 |
|
| 2007 |
Gerbi JE, Abelson JR. Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment Journal of Applied Physics. 101: 063508. DOI: 10.1063/1.2710301 |
0.804 |
|
| 2007 |
Kwon M, Lee B, Bogle SN, Nittala LN, Bishop SG, Abelson JR, Raoux S, Cheong B, Kim K. Nanometer-scale order in amorphous Ge2Sb2Te5 analyzed by fluctuation electron microscopy Applied Physics Letters. 90: 021923. DOI: 10.1063/1.2430067 |
0.818 |
|
| 2007 |
Lee B, Abelson JR, Bishop SG, Kang D, Cheong B, Kim K. Response to “Comment on ‘Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases’” [J. Appl. Phys. 97, 093509 (2005)] Journal of Applied Physics. 101: 026112. DOI: 10.1063/1.2426907 |
0.392 |
|
| 2007 |
Sperling BA, Abelson JR. Kinetic roughening of amorphous silicon during hot-wire chemical vapor deposition at low temperature Journal of Applied Physics. 101: 024915. DOI: 10.1063/1.2424527 |
0.755 |
|
| 2007 |
Kumar N, Yang Y, Noh W, Girolami GS, Abelson JR. Titanium diboride thin films by low-temperature chemical vapor deposition from the single source precursor Ti(BH 4) 3(1,2- dimethoxyethane) Chemistry of Materials. 19: 3802-3807. DOI: 10.1021/Cm070277Z |
0.709 |
|
| 2006 |
Lee B, Xiao Y, Bishop SG, Abelson JR, Raoux S, Deline VR, Kwon M, Kim K, Cheong B, Li H, Taylor PC. Photo-oxidation and the Absence of Photodarkening in Ge2Sb2Te5 Phase Change Material Mrs Proceedings. 918. DOI: 10.1557/Proc-0918-H02-04 |
0.303 |
|
| 2006 |
van der Wilt P, Kane M, Limanov A, Firester A, Goodman L, Lee J, Abelson J, Chitu A, Im JS. Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates Mrs Bulletin. 31: 461-465. DOI: 10.1557/Mrs2006.119 |
0.471 |
|
| 2006 |
Nguyen-Tran T, Suendo V, Roca I Cabarrocas P, Nittala LN, Bogle SN, Abelson JR. Fluctuation microscopy evidence for enhanced nanoscale structural order in polymorphous silicon thin films Journal of Applied Physics. 100. DOI: 10.1063/1.2360381 |
0.834 |
|
| 2006 |
Lyeo HK, Cahill DG, Lee BS, Abelson JR, Kwon MH, Kim KB, Bishop SG, Cheong BK. Thermal conductivity of phase-change material Ge2Sb 2Te5 Applied Physics Letters. 89. DOI: 10.1063/1.2359354 |
0.392 |
|
| 2006 |
Yang Y, Jayaraman S, Kim DY, Girolami GS, Abelson JR. CVD growth kinetics of HfB 2 thin films from the single-source precursor Hf(BH 4) 4 Chemistry of Materials. 18: 5088-5096. DOI: 10.1021/Cm0605421 |
0.705 |
|
| 2006 |
Chatterjee A, Jayaraman S, Gerbi JE, Kumar N, Abelson JR, Bellon P, Polycarpou AA, Chevalier JP. Tribological behavior of hafnium diboride thin films Surface and Coatings Technology. 201: 4317-4322. DOI: 10.1016/J.Surfcoat.2006.08.086 |
0.824 |
|
| 2006 |
Jayaraman S, Gerbi JE, Yang Y, Kim DY, Chatterjee A, Bellon P, Girolami GS, Chevalier JP, Abelson JR. HfB2 and Hf-B-N hard coatings by chemical vapor deposition Surface and Coatings Technology. 200: 6629-6633. DOI: 10.1016/J.Surfcoat.2005.11.040 |
0.839 |
|
| 2006 |
Yang Y, Jayaraman S, Kim DY, Girolami GS, Abelson JR. Crystalline texture in hafnium diboride thin films grown by chemical vapor deposition Journal of Crystal Growth. 294: 389-395. DOI: 10.1016/J.Jcrysgro.2006.05.035 |
0.736 |
|
| 2005 |
Jayaraman S, Yang Y, Kim DY, Girolami GS, Abelson JR. Hafnium diboride thin films by chemical vapor deposition from a single source precursor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1619-1625. DOI: 10.1116/1.2049307 |
0.736 |
|
| 2005 |
Jayaraman S, Klein EJ, Yang Y, Kim DY, Girolami GS, Abelson JR. Chromium diboride thin films by low temperature chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 631-633. DOI: 10.1116/1.1927534 |
0.727 |
|
| 2005 |
Nittala LN, Jayaraman S, Sperling BA, Abelson JR. Hydrogen-induced modification of the medium-range structural order in amorphous silicon films Applied Physics Letters. 87: 241915. DOI: 10.1063/1.2143124 |
0.834 |
|
| 2005 |
Nittala LN, Twesten RD, Voyles PM, Abelson JR. Measuring the Characteristic Length Scale of Medium Range Order in Amorphous Silicon Using Variable Resolution Fluctuation Electron Microscopy Microscopy and Microanalysis. 11. DOI: 10.1017/S1431927605506779 |
0.366 |
|
| 2004 |
Sperling BA, Abelson JR. Simultaneous short-range smoothening and global roughening during growth of hydrogenated amorphous silicon films Applied Physics Letters. 85: 3456-3458. DOI: 10.1063/1.1777414 |
0.768 |
|
| 2004 |
Khare SV, Nakhmanson SM, Voyles PM, Keblinski P, Abelson JR. Evidence from atomistic simulations of fluctuation electron microscopy for preferred local orientations in amorphous silicon Applied Physics Letters. 85: 745-747. DOI: 10.1063/1.1776614 |
0.349 |
|
| 2004 |
Sperling BA, Abelson JR. Comment on “Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films” [J. Appl. Phys. 90, 1067 (2001)] Journal of Applied Physics. 95: 2936-2936. DOI: 10.1063/1.1644628 |
0.752 |
|
| 2004 |
Nittala LN, Jayaraman S, Sperling BA, Abelson JR. Hydrogen-Induced Reduction in Medium Range Order of a-Si Thin Films Observed using Fluctuation Electron Microscopy Microscopy and Microanalysis. 10: 802-803. DOI: 10.1017/S1431927604883569 |
0.823 |
|
| 2004 |
Khare SV, Nakhmanson SM, Voyles PM, Keblinski P, Abelson JR. Evidence from simulations for orientational medium range order in fluctuation-electron-microscopy observations of a-Si Microscopy and Microanalysis. 10: 820-821. DOI: 10.1017/S1431927604880863 |
0.474 |
|
| 2003 |
Gerbi JE, Voyles PM, Treacy MMJ, Gibson JM, Abelson JR. Increasing medium-range order in amorphous silicon with low-energy ion bombardment Applied Physics Letters. 82: 3665-3667. DOI: 10.1063/1.1578164 |
0.762 |
|
| 2003 |
Voyles PM, Abelson JR. Medium-range order in amorphous silicon measured by fluctuation electron microscopy Solar Energy Materials and Solar Cells. 78: 85-113. DOI: 10.1016/S0927-0248(02)00434-8 |
0.466 |
|
| 2002 |
von Keudell A, Abelson JR. Advantages of the “optical cavity substrate” for real time infrared spectroscopy of plasma–surface interactions Journal of Applied Physics. 91: 4840-4845. DOI: 10.1063/1.1456963 |
0.402 |
|
| 2002 |
Sung J, Goedde DM, Girolami GS, Abelson JR. Remote-plasma chemical vapor deposition of conformal ZrB 2 films at low temperature: A promising diffusion barrier for ultralarge scale integrated electronics Journal of Applied Physics. 91: 3904-3911. DOI: 10.1063/1.1436296 |
0.683 |
|
| 2001 |
Voyles PM, Gerbi JE, Treacy MM, Gibson JM, Abelson JR. Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature. Physical Review Letters. 86: 5514-7. PMID 11415289 DOI: 10.1103/Physrevlett.86.5514 |
0.79 |
|
| 2001 |
Gerbi JE, Voyles PM, Treacy MMJ, Gibson JM, Chen W, Heuser BJ, Abelson JR. Control of Medium Range Order in Amorphous Silicon via Ion and Neutral Bombardment Mrs Proceedings. 664. DOI: 10.1557/PROC-664-A27.3 |
0.763 |
|
| 2001 |
Gerbi JE, Voyles PM, Treacy MMJ, Gibson JM, Chen W, Heuser BJ, Abelson JR. Control of medium range order in amorphous silicon via ion and neutral bombardment Materials Research Society Symposium - Proceedings. 664. DOI: 10.1557/Proc-664-A27.3 |
0.72 |
|
| 2001 |
Gerbi JE, Abelson JR. Deposition of microcrystalline silicon: Direct evidence for hydrogen-induced surface mobility of Si adspecies Journal of Applied Physics. 89: 1463-1469. DOI: 10.1063/1.1334639 |
0.801 |
|
| 2001 |
Katiyar M, Abelson JR. Investigation of hydrogen induced phase transition from a-Si:H to μc-Si:H using real time infrared spectroscopy Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing. 304: 349-352. DOI: 10.1016/S0921-5093(00)01528-8 |
0.446 |
|
| 2001 |
Voyles PM, Gerbi JE, Treacy M, Gibson JM, Abelson JR. Increased medium-range order in amorphous silicon with increased substrate temperature Journal of Non-Crystalline Solids. 45-52. DOI: 10.1016/S0022-3093(01)00652-4 |
0.792 |
|
| 2000 |
Gerbi JE, Abelson JR. Microstructural Control Of Thin Film Si Using Low Energy, High Flux Ions In Reactive Magnetron Sputter Deposition Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A5.3 |
0.795 |
|
| 2000 |
Voyles PM, Treacy MMJ, Jin H, Abelson JR, Gibson JM, Yang J, Guha S, Crandall RS. Comparative Fluctuation Microscopy Study of Medium-Range Order in Hydrogenated Amorphous Silicon Deposited by Various Methods Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A2.4 |
0.566 |
|
| 2000 |
Erhardt MK, Jin HC, Abelson JR, Nuzzo RG. Low-temperature fabrication of Si thin-film transistor microstructures by soft lithographic patterning on curved and planar substrates Chemistry of Materials. 12: 3306-3315. DOI: 10.1021/Cm000480T |
0.827 |
|
| 1999 |
Voyles PM, Treacy MMJ, Gibson JM, Jin H, Abelson JR. Experimental Methods and Data Analysis for Fluctuation Microscopy Mrs Proceedings. 589. DOI: 10.1557/Proc-589-155 |
0.322 |
|
| 1999 |
Sung J, Goedde DM, Girolami GS, Abelson JR. Diffusion barrier characteristics of zirconium diboride films grown by remote plasma CVD Materials Research Society Symposium - Proceedings. 563: 39-44. DOI: 10.1557/Proc-563-39 |
0.494 |
|
| 1999 |
Cohen JD, Kwon D, Chen C, Jin H, Hollar E, Robertson I, Abelson JR. Electronic Transitions in Mixed Phase Crystalline/Amorphous Silicon in the Low Crystalline Fraction Regime Mrs Proceedings. 557. DOI: 10.1557/Proc-557-495 |
0.442 |
|
| 1999 |
von Keudell A, Abelson JR. Thermally Induced Changes in the Hydrogen Microstructure of Amorphous Hydrogenated Silicon Films, Analyzed UsingIn SituReal Time Infrared Spectroscopy Japanese Journal of Applied Physics. 38: 4002-4006. DOI: 10.1143/Jjap.38.4002 |
0.344 |
|
| 1999 |
Kwon D, Chen C, Cohen JD, Jin H, Hollar E, Robertson I, Abelson JR. Electronic transitions associated with small crystalline silicon inclusions within an amorphous silicon host Physical Review B. 60: 4442-4445. DOI: 10.1103/Physrevb.60.4442 |
0.451 |
|
| 1999 |
Lubianiker Y, Cohen JD, Jin H, Abelson JR. Effect of embedded microcrystallites on the light-induced degradation of hydrogenated amorphous silicon Physical Review B. 60: 4434-4437. DOI: 10.1103/Physrevb.60.4434 |
0.33 |
|
| 1999 |
von Keudell A, Abelson JR. Direct insertion ofSiH3radicals into strained Si-Si surface bonds during plasma deposition of hydrogenated amorphous silicon films Physical Review B. 59: 5791-5798. DOI: 10.1103/Physrevb.59.5791 |
0.448 |
|
| 1999 |
Yu KM, Walukiewicz W, Muto S, Jin H, Abelson JR, Clerc C, Glover CJ, Ridgway MC. Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation Applied Physics Letters. 75: 3282-3284. DOI: 10.1063/1.125325 |
0.364 |
|
| 1999 |
Yu KM, Walukiewicz W, Muto S, Jin HC, Abelson JR. The effects of x-ray induced structural changes on the microstructure of a-Si after thermal crystallization Applied Physics Letters. 75: 2032-2034. DOI: 10.1063/1.124906 |
0.434 |
|
| 1998 |
Jackson WB, Franz A, Chabal Y, Weldon MK, Jin H, Abelson JR. Hydrogen Structures in Heavily Hydrogenated Crystalline and Amorphous Silicon Mrs Proceedings. 513. DOI: 10.1557/Proc-513-381 |
0.357 |
|
| 1998 |
Gibson JM, Treacy MMJ, Voyles PM, Abelson JR, Jin H. Changes in the Medium Range Order of α-Si:H Thin Films Observed by Variable Coherence Tem Mrs Proceedings. 507. DOI: 10.1557/Proc-507-837 |
0.44 |
|
| 1998 |
Lubianiker Y, Cohen JD, Jin H, Abelson JR. Degradation Kinetics of Hydrogenated Amorphous Silicon: The Effect of Embedded Microcrystallites Mrs Proceedings. 507. DOI: 10.1557/Proc-507-729 |
0.421 |
|
| 1998 |
Muto S, Kobayashi Y, Yu KM, Walukiewicz W, Echer CJ, McCormick S, Abelson JR. The Influence of X-Ray Irradiation on Structural Relaxation and Crystallization of Amorphous Silicon Films Japanese Journal of Applied Physics. 37: 5890-5893. DOI: 10.1143/Jjap.37.5890 |
0.421 |
|
| 1998 |
Weber C, Abelson J. Amorphous silicon buried-channel thin-film transistors Ieee Transactions On Electron Devices. 45: 447-452. DOI: 10.1109/16.658679 |
0.402 |
|
| 1998 |
Kim H, Desjardins P, Abelson JR, Greene JE. Pathways for hydrogen desorption fromSi1−xGex(001)during gas-source molecular-beam epitaxy and ultrahigh-vacuum chemical vapor deposition Physical Review B. 58: 4803-4808. DOI: 10.1103/Physrevb.58.4803 |
0.412 |
|
| 1998 |
von Keudell A, Abelson JR. The interaction of atomic hydrogen with very thin amorphous hydrogenated silicon films analyzed using in situ real time infrared spectroscopy: Reaction rates and the formation of hydrogen platelets Journal of Applied Physics. 84: 489-495. DOI: 10.1063/1.368082 |
0.379 |
|
| 1998 |
Gibson JM, Treacy MMJ, Voyles PM, Jin H, Abelson JR. Structural disorder induced in hydrogenated amorphous silicon by light soaking Applied Physics Letters. 73: 3093-3095. DOI: 10.1063/1.122683 |
0.438 |
|
| 1998 |
Jackson WB, Franz AJ, Jin HC, Abelson JR, Gland JL. Determination of the hydrogen density of states in amorphous hydrogenated silicon Journal of Non-Crystalline Solids. 227: 143-147. DOI: 10.1016/S0022-3093(98)00331-7 |
0.312 |
|
| 1998 |
Kwon D, Lee H, Cohen JD, Jin HC, Abelson JR. Optical spectra of crystalline silicon particles embedded in an amorphous silicon matrix Journal of Non-Crystalline Solids. 227: 1040-1044. DOI: 10.1016/S0022-3093(98)00254-3 |
0.428 |
|
| 1997 |
Yu KM, Wang L, Walukiewicz W, Muto S, McCormick S, Abelson JR. Effects of Synchrotron X-Rays on PVD Deposited and Ion Implanted α-Si Mrs Proceedings. 467. DOI: 10.1557/PROC-467-355 |
0.361 |
|
| 1997 |
McCormick CS, Weber CE, Abelson JR, Gates SM. An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering Applied Physics Letters. 70: 226-227. DOI: 10.1557/Proc-424-53 |
0.476 |
|
| 1997 |
McCormick CS, Weber CE, Abelson JR, Davis GA, Weiss RE, Aebi V. Low temperature fabrication of amorphous silicon thin film transistors by dc reactive magnetron sputtering Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 15: 2770-2776. DOI: 10.1116/1.580821 |
0.52 |
|
| 1997 |
Kim H, Taylor N, Abelson JR, Greene JE. Effects of H coverage on Ge segregation during Si1−xGex gas-source molecular beam epitaxy Journal of Applied Physics. 82: 6062-6066. DOI: 10.1063/1.366474 |
0.452 |
|
| 1997 |
Kim H, Glass G, Spila T, Taylor N, Park SY, Abelson JR, Greene JE. Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics Journal of Applied Physics. 82: 2288-2297. DOI: 10.1063/1.366036 |
0.417 |
|
| 1997 |
von Keudell A, Abelson JR. Evidence for atomic H insertion into strained Si–Si bonds in the amorphous hydrogenated silicon subsurface fromin situinfrared spectroscopy Applied Physics Letters. 71: 3832-3834. DOI: 10.1063/1.120544 |
0.383 |
|
| 1997 |
Nuruddin A, Abelson JR. Does a dipole layer at the p–i interface reduce the built-in voltage of amorphous silicon p–i–n solar cells? Applied Physics Letters. 71: 2797-2799. DOI: 10.1063/1.120139 |
0.302 |
|
| 1997 |
Glass G, Kim H, Sardela M, Lu Q, Carlsson J, Abelson J, Greene J. Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy Surface Science. 392: L63-L68. DOI: 10.1016/S0039-6028(97)00708-5 |
0.389 |
|
| 1997 |
Kim H, Taylor N, Spila T, Glass G, Park S, Greene J, Abelson J. Structure of the Si(011)-(16 × 2) surface and hydrogen desorption kinetics investigated using temperature-programmed desorption Surface Science. 380: L496-L500. DOI: 10.1016/S0039-6028(96)01587-7 |
0.347 |
|
| 1997 |
Lu Q, Sardela M, Taylor N, Glass G, Bramblett T, Spila T, Abelson J, Greene J. B incorporation and hole transport in fully strained heteroepitaxial Si1 − xGex grown on Si(0 0 1) by gas-source MBE from Si2H6, Ge2H6, and B2H6 Journal of Crystal Growth. 179: 97-107. DOI: 10.1016/S0022-0248(97)00116-4 |
0.373 |
|
| 1996 |
McCormick CS, Webe CE, Abelson JR. An Amorphous Silicon Thin Film Transistor Fabricated at 125°C by dc Reactive Magnetron Sputtering Mrs Proceedings. 424. DOI: 10.1557/PROC-424-53 |
0.373 |
|
| 1996 |
Kim H, Glass G, Park SY, Spila T, Taylor N, Abelson JR, Greene JE. Effects of B doping on hydrogen desorption from Si(001) during gas‐source molecular‐beam epitaxy from Si2H6 and B2H6 Applied Physics Letters. 69: 3869-3871. DOI: 10.1063/1.117132 |
0.342 |
|
| 1995 |
Katiyar M, Abelson JR. Methods to enhance absorption signals in infrared reflectance spectroscopy: A comparison using optical simulations Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 13: 2005-2012. DOI: 10.1116/1.579644 |
0.429 |
|
| 1995 |
Yang YH, Abelson JR. Spectroscopic ellipsometry of thin films on transparent substrates: A formalism for data interpretation Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 13: 1145-1149. DOI: 10.1116/1.579601 |
0.443 |
|
| 1995 |
Cahill DG, Katiyar M, Abelson JR. Heat transport in micron thick a-Si: H films Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 71: 677-682. DOI: 10.1080/01418639508238557 |
0.474 |
|
| 1995 |
Katiyar M, Yang YH, Abelson JR. Si–C–H bonding in amorphous Si1−xCx:H film/substrate interfaces determined by real time infrared absorption during reactive magnetron sputter deposition Journal of Applied Physics. 78: 1659-1663. DOI: 10.1063/1.360260 |
0.439 |
|
| 1995 |
Katiyar M, Yang YH, Abelson JR. Hydrogen‐surface reactions during the growth of hydrogenated amorphous silicon by reactive magnetron sputtering: A real time kinetic study byin situinfrared absorption Journal of Applied Physics. 77: 6247-6256. DOI: 10.1063/1.359156 |
0.473 |
|
| 1995 |
Yang YH, Abelson JR. Growth of polycrystalline silicon at 470 °C by magnetron sputtering onto a sputtered μc‐hydrogenated silicon seed layer Applied Physics Letters. 67: 3623-3625. DOI: 10.1063/1.115338 |
0.485 |
|
| 1994 |
Yang Y, Feng G, Katiyar M, Abelson J. In-situ Ellipsometry Study of Ion Bombardment Effects on Low Temperature Si Epitaxy by dc Magnetron Sputtering Mrs Proceedings. 354. DOI: 10.1557/Proc-354-75 |
0.523 |
|
| 1994 |
Fitzner MP, Abelson JR. Reactive Magnetron Sputtering of Silicon in AR + CH4: Identity and Energy of the Slc Growth Species Mrs Proceedings. 339. DOI: 10.1557/Proc-339-435 |
0.455 |
|
| 1994 |
Liang Y, Yang S, Nuruddin A, Abelson J. Boron Doped A-Si,C:H Grown by Reactive Magnetron Sputtering from Doped Targets Mrs Proceedings. 336. DOI: 10.1557/Proc-336-589 |
0.458 |
|
| 1994 |
Liang YH, Abelson JR. Posthydrogenation study of a‐Si films grown by reactive magnetron sputtering Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 12: 1099-1102. DOI: 10.1116/1.579171 |
0.389 |
|
| 1994 |
Petrov I, Myers A, Greene JE, Abelson JR. Mass and energy resolved detection of ions and neutral sputtered species incident at the substrate during reactive magnetron sputtering of Ti in mixed Ar+N2 mixtures Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 12: 2846-2854. DOI: 10.1116/1.578955 |
0.352 |
|
| 1994 |
Cahill DG, Katiyar M, Abelson JR. Thermal conductivity of a-Si:H thin films Physical Review B. 50: 6077-6081. DOI: 10.1103/Physrevb.50.6077 |
0.494 |
|
| 1994 |
Abelson JR, Mandrell L, Doyle JR. Hydrogen release kinetics during reactive magnetron sputter deposition ofa‐Si:H: An isotope labeling study Journal of Applied Physics. 76: 1856-1870. DOI: 10.1063/1.357706 |
0.466 |
|
| 1994 |
Nuruddin A, Doyle JR, Abelson JR. Surface reaction probability in hydrogenated amorphous silicon growth Journal of Applied Physics. 76: 3123-3129. DOI: 10.1063/1.357494 |
0.445 |
|
| 1994 |
Liang YH, Maley N, Abelson JR. The improved stability of hydrogenated amorphous silicon films grown by reactive magnetron sputtering at high substrate temperature Journal of Applied Physics. 75: 3704-3706. DOI: 10.1063/1.356042 |
0.49 |
|
| 1994 |
Yang YH, Katiyar M, Feng GF, Maley N, Abelson JR. Subsurface hydrogenated amorphous silicon to μc‐hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry Applied Physics Letters. 65: 1769-1771. DOI: 10.1063/1.113003 |
0.323 |
|
| 1993 |
Manning NR, Chen H, Abelson JR, Allen LH. Reaction Rate Kinetics and Film Textures of Palladium Silicide Formed on Hydrogenated Amorphous Silicon Mrs Proceedings. 311. DOI: 10.1557/Proc-311-311 |
0.431 |
|
| 1993 |
Yang S, Maley N, Abelson J. The Relation Between Microstructure and Electronic Properties of Magnetron Sputtered a-Si1−x,Cx:H Mrs Proceedings. 297. DOI: 10.1557/Proc-297-675 |
0.449 |
|
| 1993 |
Yang Y, Katiyar M, Abelson J, Maley N. Ellipsometry Studies of (μc-Si:H/ZnO) and (μc-Si:H/a-Si:H) Interfaces in Magnetron Sputtering System Mrs Proceedings. 297. DOI: 10.1557/Proc-297-25 |
0.436 |
|
| 1993 |
Liang YH, Maley N, Abelson JR. High Substrate Temperature a-Si:H Grown by DC Reactive Magnetron Sputtering Mrs Proceedings. 297. DOI: 10.1557/Proc-297-145 |
0.408 |
|
| 1993 |
Yang YH, Feng GF, Katiyar M, Maley N, Abelson JR. Ellipsometry and x‐ray photoelectron spectroscopy study of SnO2 reduction at the interface with sputtered a‐Si:H Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 11: 1414-1417. DOI: 10.1116/1.578564 |
0.466 |
|
| 1993 |
Yang S, Abelson JR. Amorphous silicon alloys on c‐Si: Influence of substrate cleaning and ion bombardment on film adhesion and microstructure Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 11: 1327-1331. DOI: 10.1116/1.578548 |
0.431 |
|
| 1993 |
Katiyar M, Feng GF, Yang YH, Abelson JR, Maley N. Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy Applied Physics Letters. 63: 461-463. DOI: 10.1063/1.110024 |
0.459 |
|
| 1993 |
Katiyar M, Feng GF, Yang YH, Maley N, Abelson JR. Real time infrared reflectance spectroscopy: A study of hydrogen incorporation and release during a-Si:H growth by reactive magnetron sputtering Journal of Non-Crystalline Solids. 111-114. DOI: 10.1016/0022-3093(93)90504-Q |
0.425 |
|
| 1993 |
Abelson JR. Plasma deposition of hydrogenated amorphous silicon: Studies of the growth surface Applied Physics a Solids and Surfaces. 56: 493-512. DOI: 10.1007/Bf00331400 |
0.475 |
|
| 1992 |
Feng GF, Katiyar M, Abelson JR, Maley N. Dielectric functions and electronic band states of a-Si and a-Si: H Physical Review B. 45: 9103-9107. PMID 10000772 DOI: 10.1103/Physrevb.45.9103 |
0.487 |
|
| 1992 |
Feng GF, Katiyar M, Yang YH, Abelson JR, Maley N. Microcrystalline Silicon by Dc Magnetron Sputtering: Growth Mechanisms Mrs Proceedings. 283. DOI: 10.1557/Proc-283-501 |
0.512 |
|
| 1992 |
Abelson JR, Doyle JR, Mandrell L, Maley N. Reactive Magnetron Sputtering: In Situ Analyses of Particle Fluxes and Interactions with the Growth Surface Mrs Proceedings. 268. DOI: 10.1557/Proc-268-83 |
0.479 |
|
| 1992 |
Fitzner M, Abelson J, Kanicki J. Investigation of Hydrogen and Nitrogen Thermal Stability in PECVD a-Sinx:H. Mrs Proceedings. 258. DOI: 10.1557/Proc-258-649 |
0.487 |
|
| 1992 |
Nuruddin A, Doyle JR, Abelson JR. Macro-Trench Studies of Surface Reaction Probability of a-Si:H Film Growth Mrs Proceedings. 258. DOI: 10.1557/Proc-258-33 |
0.478 |
|
| 1992 |
Chen Y, Jones S, Williamson D, Yang S, Maley N, Abelson J. Small-Angle X-Ray Scattering from a-Si:H and a-SiC:H Alloys Prepared by Reactive DC Magnetron Sputtering Mrs Proceedings. 258. DOI: 10.1557/Proc-258-311 |
0.472 |
|
| 1992 |
Feng GF, Katiyar M, Yang YH, Abelson JR, Maley N. Growth and Structure of Microcrystalline Silicon by Reactive DC Magnetron Sputtering Mrs Proceedings. 258. DOI: 10.1557/Proc-258-179 |
0.501 |
|
| 1991 |
Manning NR, Chen H, Abelson JR, Allen LH. The Effect of Hydrogenated Amorphous Silicon on the Formation Rate Kinetics and Crystallography of Palladium Slicide Films Mrs Proceedings. 238. DOI: 10.1557/Proc-238-617 |
0.493 |
|
| 1991 |
Feng GF, Katiyar M, Abelson JR, Maley N. Substrate Induced Crystallinity in Reactive Sputter Deposition of Hydrogenated Silicon Mrs Proceedings. 219. DOI: 10.1557/Proc-219-709 |
0.447 |
|
| 1991 |
Xu X, Isomura M, Yoon JH, Wagner S, Abelson JR. Correlation Between Freeze-In Temperature of Defect Density and Hydrogen Concentration in a-Si:H Mrs Proceedings. 219. DOI: 10.1557/Proc-219-69 |
0.334 |
|
| 1991 |
Abelson JR, Maley N, Doyle JR, Feng GF, Fitzner M, Katiyar M, Mandrell L, Myers AM, Nuruddin A, Ruzic DN, Yang S. In Situ Measurements of Hydrogen Flux, Surface Coverage, Incorporation and Desorption During Magnetron Sputter-Deposition of A-SI:H. Mrs Proceedings. 219. DOI: 10.1557/Proc-219-619 |
0.391 |
|
| 1991 |
Katiyar M, Feng GF, Abelson JR, Maley N. In Situ IR Absorption Study of H Bonding in a-Si:H Thin Films Mrs Proceedings. 219. DOI: 10.1557/Proc-219-295 |
0.427 |
|
| 1991 |
Doyle JR, Maley N, Abelson JR. Schottky Barriers on Magnetron Sputtered a-Si:H: Depletion width Effects on Photocarrier Collection vs Bandgap and Light Soaking Mrs Proceedings. 219. DOI: 10.1557/Proc-219-111 |
0.453 |
|
| 1991 |
Myers AM, Ruzic DN, Doyle R, Abelson JR. Monte Carlo simulations of magnetron sputtering particle transport Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 614-618. DOI: 10.1116/1.577375 |
0.406 |
|
| 1991 |
Feng GF, Katiyar M, Maley N, Abelson JR. Silicon epitaxy at 230 °C by reactive dc magnetron sputtering and itsinsituellipsometry monitoring Applied Physics Letters. 59: 330-332. DOI: 10.1063/1.105586 |
0.537 |
|
| 1991 |
Myers AM, Doyle JR, Feng GJ, Maley N, Ruzic DL, Abelson JR. Energetic particle fluxes in magnetron sputter deposition of a-Si:H Journal of Non-Crystalline Solids. 137: 783-786. DOI: 10.1016/S0022-3093(05)80237-6 |
0.487 |
|
| 1991 |
Feng GF, Katiyar M, Abelson JR, Maley N. Hydrogenation induced changes in band states in a-Si:H Journal of Non-Crystalline Solids. 331-334. DOI: 10.1016/S0022-3093(05)80123-1 |
0.38 |
|
| 1990 |
Park HR, Liu JZ, i Cabarrocas PR, Maruyama A, Isomura M, Wagner S, Abelson JR, Finger F. Saturation behavior of the Light-Induced Defect Density in Hydrogenated Amorphous Silicon Mrs Proceedings. 192. DOI: 10.1557/Proc-192-751 |
0.356 |
|
| 1990 |
Myers AM, Ruzic DN, Maley N, Doyle JR, Abelson JR. Energy Resolved Mass Spectrometry of the a-Si:D Film Growth Species During DC Magnetron Sputtering Mrs Proceedings. 192. DOI: 10.1557/Proc-192-595 |
0.462 |
|
| 1990 |
Pinarbasi M, Kushner MJ, Abelson JR. Electronic stability of the reactively sputtered hydrogenated amorphous silicon thin films: The effect of hydrogen content Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 8: 1369-1373. DOI: 10.1116/1.576884 |
0.459 |
|
| 1990 |
Abelson JR, Doyle JR, Mandrell L, Myers AM, Maley N. Surface hydrogen release during the growth of a Si: H by reactive magnetron sputtering Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 1364-1368. DOI: 10.1116/1.576883 |
0.453 |
|
| 1990 |
Pinarbasi M, Kushner MJ, Abelson JR. Effect of hydrogen content on the light induced defect generation in direct current magnetron reactively sputtered hydrogenated amorphous silicon thin films Journal of Applied Physics. 68: 2255-2264. DOI: 10.1063/1.346530 |
0.455 |
|
| 1990 |
Park HR, Liu JZ, Roca i Cabarrocas P, Maruyama A, Isomura M, Wagner S, Abelson JR, Finger F. Dependence of the saturated light‐induced defect density on macroscopic properties of hydrogenated amorphous silicon Applied Physics Letters. 57: 1440-1442. DOI: 10.1063/1.103364 |
0.418 |
|
| 1990 |
Pinarbasi M, Abelson JR, Kushner MJ. Reduced Staebler–Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films Applied Physics Letters. 56: 1685-1687. DOI: 10.1063/1.103117 |
0.442 |
|
| 1990 |
Bass JD, Ahrens TJ, Abelson JR, Hua T. Shock temperature measurements in metals: new results for an Fe alloy Journal of Geophysical Research. 95: 21,767-21,776. DOI: 10.1029/Jb095Ib13P21767 |
0.308 |
|
| 1989 |
Pinarbasi M, Maley N, Abelson JR, Chu V, Wagner S. Carrier Transport Properties of DC Magnetron Reactive Sputtered a-Si:H Films Mrs Proceedings. 149. DOI: 10.1557/Proc-149-205 |
0.445 |
|
| 1989 |
Pinarbasi M, Maley N, Chou LH, Myers A, Kushner MJ, Abelson JR, Thornton JA. Erratum: Effect of hydrogen on the microstructural, optical, and electronic properties of a‐Si:H thin films deposited by direct current magnetron reactive sputtering [J. Vac. Sci. Technol. A 7, 1210 (1989)] Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 3129-3129. DOI: 10.1116/1.576328 |
0.447 |
|
| 1989 |
Maley N, Myers A, Pinarbasi M, Leet D, Abelson JR, Thornton JA. Infrared absorption and thermal evolution study of hydrogen bonding in a‐SiH Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 1267-1270. DOI: 10.1116/1.576266 |
0.421 |
|
| 1989 |
Pinarbasi M, Maley N, Kushner MJ, Myers A, Abelson JR, Thornton JA. Effect of hydrogen on the microstructural, optical, and electronic properties of a‐Si:H thin films deposited by direct current magnetron reactive sputtering Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 1210-1214. DOI: 10.1116/1.576256 |
0.465 |
|
| 1989 |
Bahir G, Merz JL, Abelson JR, Sigmon TW. Iron redistribution and compensation mechanisms in semi‐insulating Si‐implanted InP Journal of Applied Physics. 65: 1009-1017. DOI: 10.1063/1.343086 |
0.359 |
|
| 1989 |
Pinarbasi M, Maley N, Myers A, Abelson J. Hydrogenated amorphous silicon films deposited by reactive sputtering: The electronic properties, hydrogen bonding and microstructure Thin Solid Films. 171: 217-233. DOI: 10.1016/0040-6090(89)90045-X |
0.452 |
|
| 1989 |
Abelson J. Photoconductivity of hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 114: 450-452. DOI: 10.1016/0022-3093(89)90614-5 |
0.309 |
|
| 1989 |
Abelson JR, Mandrell L, Doyle JR, Myers A, Maley N. Isotopic hydrogen exchange studies of the a-Si:H surface during growth Journal of Non-Crystalline Solids. 114: 184-186. DOI: 10.1016/0022-3093(89)90107-5 |
0.458 |
|
| 1989 |
Maley N, Szafranek I, Mandrell L, Katiyar M, Abelson J, Thornton J. Infrared relfectance spectroscopy of very thin films of a-SiH Journal of Non-Crystalline Solids. 114: 163-165. DOI: 10.1016/0022-3093(89)90100-2 |
0.48 |
|
| 1988 |
Pinarbasi M, Maley N, Myers A, Szafranek I, Abelson JR, Thornton JA. Microstructural and Electronic Properties of Hydrogenated Amorphous Silicon Films Deposited by Magnetron Reactive Sputtering. Mrs Proceedings. 118. DOI: 10.1557/Proc-118-537 |
0.522 |
|
| 1988 |
Abelson JR, Sigmon TW, Kim KB, Weiner KH. Epitaxial GexSi1−x/Si (100) structures produced by pulsed laser mixing of evaporated Ge on Si (100) substrates Applied Physics Letters. 52: 230-232. DOI: 10.1063/1.99528 |
0.414 |
|
| 1988 |
Abelson JR, Kim KB, Mercer DE, Helms CR, Sinclair R, Sigmon TW. Disordered intermixing at the platinum:silicon interface demonstrated by high‐resolution cross‐sectional transmission electron microscopy, Auger electron spectroscopy, and MeV ion channeling Journal of Applied Physics. 63: 689-692. DOI: 10.1063/1.340058 |
0.458 |
|
| 1987 |
Abelson JR, Weiner KH, Kim K, Sigmon TW. Pulsed Laser Crystallization of GexSi1−x Alloy Films on Si(100) Substrates Mrs Proceedings. 102. DOI: 10.1557/Proc-102-323 |
0.412 |
|
| 1987 |
Bahir G, Merz JL, Abelson JR, Sigmon TW. Rapid thermal alloyed ohmic contact on inp Journal of Electronic Materials. 16: 257-262. DOI: 10.1007/Bf02653363 |
0.378 |
|
| 1986 |
Abelson JR, Sigmon TW. Atomic Registry at the Pt-Si Interface Studied by Transmission Channeling RBS Mrs Proceedings. 77. DOI: 10.1557/Proc-77-283 |
0.418 |
|
| 1986 |
Bahir G, Merz JL, Abelson JR, Sigmon TW. The Effect of Implantation and Annealing Conditions on the Fe Profile in Semi-Insulating InP. Mrs Proceedings. 74. DOI: 10.1557/Proc-74-731 |
0.303 |
|
| 1986 |
Abelson JR, Sigmon TW. Optimizing the Depth Resolution of Rutherford Backscattering Through Modeling of Noise Sources Mrs Proceedings. 69. DOI: 10.1557/Proc-69-275 |
0.314 |
|
| 1986 |
Abelson JR, Tsai CC, Sigmon TW. Compositional profile of the amorphous silicon/nitride interface studied with Rutherford backscattering Applied Physics Letters. 49: 850-852. DOI: 10.1063/1.97514 |
0.42 |
|
| 1985 |
Bahir G, Merz J, Abelson J, Sigmon T. Correlation of Rutherford Backscattering and Electrical Measurements on Si Implanted InP Following Rapid Thermal and Furnace Annealing Mrs Proceedings. 45. DOI: 10.1557/Proc-45-297 |
0.322 |
|
| 1985 |
Fu CY, Mikkelsen JC, Schmitt J, Abelson J, Knights JC, Johnson N, Barker A, Thompson MJ. Microwave plasma oxidation of silicon Journal of Electronic Materials. 14: 685-706. DOI: 10.1007/Bf02654306 |
0.313 |
|
| 1983 |
Nemanich RJ, Tsai CC, Stafford BL, Abelson JR, Sigmon TW. Initial Phase formation at the Interface of Ni, Pd, or Pt and Si Mrs Proceedings. 25. DOI: 10.1557/Proc-25-9 |
0.327 |
|
| 1983 |
Abelson J, de Rosny G. The relation between contact potential and planar conduction as a-Si : H films undergo gas adsorption or temperature changes Journal De Physique. 44: 993-1003. DOI: 10.1051/jphys:01983004408099300 |
0.301 |
|
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