Year |
Citation |
Score |
2022 |
Hsain HA, Lee YH, Lancaster S, Lomenzo PD, Xu B, Mikolajick T, Schroeder U, Parsons GN, Jones JL. Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface. Nanotechnology. PMID 36538824 DOI: 10.1088/1361-6528/acad0a |
0.334 |
|
2022 |
Hsain HA, Lee Y, Lancaster S, Materano M, Alcala R, Xu B, Mikolajick T, Schroeder U, Parsons GN, Jones JL. Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Films. Acs Applied Materials & Interfaces. PMID 36069477 DOI: 10.1021/acsami.2c11073 |
0.382 |
|
2022 |
Nye RA, Wang S, Uhlenbrock S, Smythe JA, Parsons GN. analysis of growth rate evolution during molecular layer deposition of ultra-thin polyurea films using aliphatic and aromatic precursors. Dalton Transactions (Cambridge, England : 2003). PMID 35018915 DOI: 10.1039/d1dt03689k |
0.324 |
|
2021 |
Song SK, Kim JS, Margavio HRM, Parsons GN. Multimaterial Self-Aligned Nanopatterning by Simultaneous Adjacent Thin Film Deposition and Etching. Acs Nano. PMID 34170123 DOI: 10.1021/acsnano.1c04086 |
0.37 |
|
2020 |
Barton HF, Jamir JD, Davis AK, Peterson GW, Parsons GN. Doubly-Protective MOF-Photo-Fabrics: Template-Free Synthesis of PCN-222-Textiles for Rapid Hydrolysis, Photo-Hydrolysis and Selective Oxidation of Multiple Chemical Warfare Agents. Chemistry (Weinheim An Der Bergstrasse, Germany). PMID 32875644 DOI: 10.1002/Chem.202003716 |
0.342 |
|
2020 |
Barton HF, Davis AK, Parsons GN. The Effect of Surface Hydroxylation on MOF Formation on ALD Metal Oxides: MOF-525 on TiO/Polypropylene for Catalytic Hydrolysis of Chemical Warfare Agent Simulants. Acs Applied Materials & Interfaces. PMID 32027111 DOI: 10.1021/Acsami.9B20910 |
0.417 |
|
2020 |
Parsons GN, Elam JW, George SM, Haukka S, Jeon H, (Erwin) Kessels WMM, Leskelä M, Poodt P, Ritala M, Rossnagel SM. Erratum: “History of atomic layer deposition and its relationship with the American Vacuum Society” [J. Vac. Sci. Technol. A 31, 050818 (2013)] Journal of Vacuum Science & Technology A. 38: 037001. DOI: 10.1116/6.0000143 |
0.415 |
|
2020 |
Xie W, Parsons GN. Thermal atomic layer etching of metallic tungsten via oxidation and etch reaction mechanism using O2 or O3 for oxidation and WCl6 as the chlorinating etchant Journal of Vacuum Science & Technology A. 38: 022605. DOI: 10.1116/1.5134430 |
0.399 |
|
2020 |
Saare H, Song SK, Kim J, Parsons GN. Effect of reactant dosing on selectivity during area-selective deposition of TiO2 via integrated atomic layer deposition and atomic layer etching Journal of Applied Physics. 128: 105302. DOI: 10.1063/5.0013552 |
0.472 |
|
2020 |
Hsain HA, Lee Y, Parsons G, Jones JL. Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (HfxZr1−x)O2 thin films Applied Physics Letters. 116: 192901. DOI: 10.1063/5.0002835 |
0.34 |
|
2020 |
Nye RA, Kelliher AP, Gaskins JT, Hopkins PE, Parsons GN. Understanding Molecular Layer Deposition Growth Mechanisms in Polyurea via Picosecond Acoustics Analysis Chemistry of Materials. 32: 1553-1563. DOI: 10.1021/Acs.Chemmater.9B04702 |
0.468 |
|
2020 |
Parsons GN, Clark RD. Area-Selective Deposition: Fundamentals, Applications, and Future Outlook Chemistry of Materials. 32: 4920-4953. DOI: 10.1021/Acs.Chemmater.0C00722 |
0.494 |
|
2019 |
Pomerantz NL, Anderson EE, Dugan NP, Hoffman NF, Barton HF, Lee DT, Oldham CJ, Peterson GW, Parsons GN. Air, Water Vapor, and Aerosol Transport through Textiles with Surface Functional Coatings of Metal Oxides and Metal-Organic Frameworks. Acs Applied Materials & Interfaces. PMID 31241889 DOI: 10.1021/Acsami.9B04091 |
0.428 |
|
2019 |
Fusco MA, Oldham CJ, Parsons GN. Investigation of the Corrosion Behavior of Atomic Layer Deposited Al₂O₃/TiO₂ Nanolaminate Thin Films on Copper in 0.1 M NaCl. Materials (Basel, Switzerland). 12. PMID 30813487 DOI: 10.3390/Ma12040672 |
0.494 |
|
2019 |
Lee DT, Jamir JD, Peterson GW, Parsons GN. Water-Stable Chemical-Protective Textiles via Euhedral Surface-Oriented 2D Cu-TCPP Metal-Organic Frameworks. Small (Weinheim An Der Bergstrasse, Germany). e1805133. PMID 30707495 DOI: 10.1002/Smll.201805133 |
0.335 |
|
2019 |
Parsons GN. Functional model for analysis of ALD nucleation and quantification of area-selective deposition Journal of Vacuum Science & Technology A. 37: 020911. DOI: 10.1116/1.5054285 |
0.453 |
|
2019 |
Hill GT, Lee DT, Williams PS, Needham CD, Dandley EC, Oldham CJ, Parsons GN. Insight on the Sequential Vapor Infiltration Mechanisms of Trimethylaluminum with Poly(methyl methacrylate), Poly(vinylpyrrolidone), and Poly(acrylic acid) The Journal of Physical Chemistry C. 123: 16146-16152. DOI: 10.1021/Acs.Jpcc.9B02153 |
0.39 |
|
2019 |
Song SK, Saare H, Parsons GN. Integrated Isothermal Atomic Layer Deposition/Atomic Layer Etching Supercycles for Area-Selective Deposition of TiO2 Chemistry of Materials. 31: 4793-4804. DOI: 10.1021/Acs.Chemmater.9B01143 |
0.452 |
|
2018 |
Barton HF, Davis AK, Lee DT, Parsons GN. Solvothermal Synthesis of MIL-96 and UiO-66-NH2 on Atomic Layer Deposited Metal Oxide Coatings on Fiber Mats. Journal of Visualized Experiments : Jove. PMID 29985357 DOI: 10.3791/57734 |
0.491 |
|
2018 |
Dwyer D, Lee DT, Boyer S, Bernier W, Parsons GN, Jones WE. Toxic Organophosphate Hydrolysis using Nanofiber-Templated UiO-66-NH2 Metal-Organic Framework Polycrystalline Cylinders. Acs Applied Materials & Interfaces. PMID 29972296 DOI: 10.1021/Acsami.8B08167 |
0.377 |
|
2018 |
Xie W, Lemaire PC, Parsons GN. Thermally-Driven Self-Limiting Atomic Layer Etching of Metallic Tungsten Using WF6 and O2. Acs Applied Materials & Interfaces. PMID 29461793 DOI: 10.1021/Acsami.7B19024 |
0.437 |
|
2018 |
Fusco MA, Woodward IR, Oldham CJ, Parsons GN. Enhanced Corrosion Protection of Copper in Salt Environments with Nanolaminate Ceramic Coatings Deposited by Atomic Layer Deposition Ecs Transactions. 85: 683-691. DOI: 10.1149/08513.0683ecst |
0.348 |
|
2018 |
Stevens EC, Mousa MBM, Parsons GN. Thermal atomic layer deposition of Sn metal using SnCl4 and a vapor phase silyl dihydropyrazine reducing agent Journal of Vacuum Science & Technology A. 36: 06A106. DOI: 10.1116/1.5055212 |
0.489 |
|
2018 |
King MJ, Theofanis PL, Lemaire PC, Santiso EE, Parsons GN. Ab initio analysis of nucleation reactions during tungsten atomic layer deposition on Si(100) and W(110) substrates Journal of Vacuum Science & Technology A. 36: 061507. DOI: 10.1116/1.5044740 |
0.741 |
|
2018 |
Mousa MBM, Ovental JS, Brozena AH, Oldham CJ, Parsons GN. Modeling and experimental demonstration of high-throughput flow-through spatial atomic layer deposition of Al2O3 coatings on textiles at atmospheric pressure Journal of Vacuum Science & Technology A. 36: 031517. DOI: 10.1116/1.5022077 |
0.456 |
|
2018 |
Ives RL, Oldham CJ, Daubert JS, Gremaud AP, Collins G, Marsden D, Bui T, Fusco MA, Mitsdarffer B, Parsons GN. Corrosion Mitigation Coatings for RF Sources and Components Ieee Transactions On Electron Devices. 65: 2385-2392. DOI: 10.1109/Ted.2017.2788379 |
0.36 |
|
2018 |
Xie W, Khan S, Rojas OJ, Parsons GN. Control of Micro- and Mesopores in Carbon Nanofibers and Hollow Carbon Nanofibers Derived from Cellulose Diacetate via Vapor Phase Infiltration of Diethyl Zinc Acs Sustainable Chemistry & Engineering. 6: 13844-13853. DOI: 10.1021/Acssuschemeng.8B02014 |
0.324 |
|
2018 |
Stevens E, Tomczak Y, Chan BT, Altamirano Sanchez E, Parsons GN, Delabie A. Area-Selective Atomic Layer Deposition of TiN, TiO2, and HfO2 on Silicon Nitride with inhibition on Amorphous Carbon Chemistry of Materials. 30: 3223-3232. DOI: 10.1021/Acs.Chemmater.8B00017 |
0.526 |
|
2018 |
Min J, Chen Y, Chen I, Sun T, Lee DT, Li C, Zhu Y, O'Connor BT, Parsons GN, Chang C. Atomic Layer Deposition: Conformal Physical Vapor Deposition Assisted by Atomic Layer Deposition and Its Application for Stretchable Conductors (Adv. Mater. Interfaces 22/2018) Advanced Materials Interfaces. 5: 1870109. DOI: 10.1002/Admi.201870109 |
0.483 |
|
2018 |
Min J, Chen Y, Chen I, Sun T, Lee DT, Li C, Zhu Y, O'Connor BT, Parsons GN, Chang C. Conformal Physical Vapor Deposition Assisted by Atomic Layer Deposition and Its Application for Stretchable Conductors Advanced Materials Interfaces. 5: 1801379. DOI: 10.1002/Admi.201801379 |
0.474 |
|
2017 |
Zhao J, Kalanyan B, Barton HF, Sperling BA, Parsons GN.
Time-Resolved Attenuated Total Reflectance Infrared Spectroscopy for Probing Metal-Organic Framework Thin Film Growth. Chemistry of Materials : a Publication of the American Chemical Society. 29: 8804-8810. PMID 29545675 DOI: 10.1021/Acs.Chemmater.7B03096 |
0.585 |
|
2017 |
Lee DT, Zhao J, Oldham CJ, Peterson GW, Parsons GN. UiO-66-NH2 MOF Nucleation on TiO2, ZnO, and Al2O3 ALD-treated Polymer Fibers: Role of Metal Oxide on MOF Growth and Catalytic Hydrolysis of Chemical Warfare Agent Simulants. Acs Applied Materials & Interfaces. PMID 29165990 DOI: 10.1021/Acsami.7B15397 |
0.601 |
|
2017 |
Bagal A, Zhang XA, Shahrin R, Dandley EC, Zhao J, Poblete FR, Oldham CJ, Zhu Y, Parsons GN, Bobko C, Chang CH. Large-Area Nanolattice Film with Enhanced Modulus, Hardness, and Energy Dissipation. Scientific Reports. 7: 9145. PMID 28831168 DOI: 10.1038/S41598-017-09521-6 |
0.573 |
|
2017 |
Lemaire PC, Lee DT, Zhao J, Parsons GN. Reversible Low-Temperature Metal Node Distortion during Atomic Layer Deposition of Al2O3 and TiO2 on UiO-66-NH2 Metal Organic Framework Crystal Surfaces. Acs Applied Materials & Interfaces. PMID 28598598 DOI: 10.1021/Acsami.7B05214 |
0.56 |
|
2017 |
Hilton GM, Taylor AJ, Hussain S, Dandley EC, Griffith EH, Garantziotis S, Parsons GN, Bonner JC, Bereman MS. Mapping Differential Cellular Protein Response of Mouse Alveolar Epithelial Cells to Multi-Walled Carbon Nanotubes as a Function of Atomic Layer Deposition Coating. Nanotoxicology. 1-41. PMID 28277982 DOI: 10.1080/17435390.2017.1299888 |
0.414 |
|
2017 |
Lemaire PC, King M, Parsons GN. Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD. The Journal of Chemical Physics. 146: 052811. PMID 28178812 DOI: 10.1063/1.4967811 |
0.674 |
|
2017 |
Daubert JS, Hill GT, Gotsch HN, Gremaud AP, Ovental JS, Williams PS, Oldham CJ, Parsons GN. Corrosion Protection of Copper Using Al2O3, TiO2, ZnO, HfO2, and ZrO2 Atomic Layer Deposition. Acs Applied Materials & Interfaces. PMID 28098440 DOI: 10.1021/Acsami.6B13571 |
0.467 |
|
2017 |
Daubert JS, Wang R, Ovental JS, Barton HF, Rajagopalan R, Augustyn V, Parsons GN. Intrinsic limitations of atomic layer deposition for pseudocapacitive metal oxides in porous electrochemical capacitor electrodes Journal of Materials Chemistry A. 5: 13086-13097. DOI: 10.1039/C7Ta02719B |
0.482 |
|
2017 |
Lemaire PC, Parsons GN. Thermal Selective Vapor Etching of TiO2: Chemical Vapor Etching via WF6 and Self-Limiting Atomic Layer Etching Using WF6 and BCl3 Chemistry of Materials. 29: 6653-6665. DOI: 10.1021/Acs.Chemmater.7B00985 |
0.505 |
|
2017 |
Lee DT, Zhao J, Peterson GW, Parsons GN. Catalytic “MOF-Cloth” Formed via Directed Supramolecular Assembly of UiO-66-NH2 Crystals on Atomic Layer Deposition-Coated Textiles for Rapid Degradation of Chemical Warfare Agent Simulants Chemistry of Materials. 29: 4894-4903. DOI: 10.1021/Acs.Chemmater.7B00949 |
0.538 |
|
2016 |
Zhao J, Lee DT, Yaga RW, Hall MG, Barton HF, Woodward IR, Oldham CJ, Walls HJ, Peterson GW, Parsons GN. Ultra-Fast Degradation of Chemical Warfare Agents Using MOF-Nanofiber Kebabs. Angewandte Chemie (International Ed. in English). PMID 27653957 DOI: 10.1002/Anie.201606656 |
0.589 |
|
2016 |
Tovar TM, Zhao J, Nunn WT, Barton HF, Peterson GW, Parsons GN, LeVan MD. Diffusion of CO2 in large crystals of Cu-BTC MOF. Journal of the American Chemical Society. PMID 27556899 DOI: 10.1021/Jacs.6B05930 |
0.437 |
|
2016 |
Huang L, Li G, Gurarslan A, Yu Y, Kirste R, Guo W, Zhao J, Collazo R, Sitar Z, Parsons GN, Kudenov M, Cao L. Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers. Acs Nano. PMID 27483193 DOI: 10.1021/Acsnano.6B02195 |
0.518 |
|
2016 |
Wang Z, Zhao J, Bagal A, Dandley EC, Oldham CJ, Fang T, Parsons GN, Chang CH. Wicking Enhancement in Three-Dimensional Hierarchical Nanostructures. Langmuir : the Acs Journal of Surfaces and Colloids. PMID 27459627 DOI: 10.1021/Acs.Langmuir.6B01864 |
0.469 |
|
2016 |
Dandley EC, Taylor AJ, Duke KS, Ihrie MD, Shipkowski KA, Parsons GN, Bonner JC. Atomic layer deposition coating of carbon nanotubes with zinc oxide causes acute phase immune responses in human monocytes in vitro and in mice after pulmonary exposure. Particle and Fibre Toxicology. 13: 29. PMID 27278808 DOI: 10.1186/S12989-016-0141-9 |
0.405 |
|
2016 |
Lemaire PC, Zhao J, Williams PS, Walls HJ, Shepherd SD, Losego MD, Peterson GW, Parsons GN. CuBTC MOF Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition. Acs Applied Materials & Interfaces. PMID 26999431 DOI: 10.1021/Acsami.6B01195 |
0.751 |
|
2016 |
Min JH, Bagal A, Mundy JZ, Oldham CJ, Wu BI, Parsons GN, Chang CH. Fabrication and design of metal nano-accordion structures using atomic layer deposition and interference lithography. Nanoscale. PMID 26863903 DOI: 10.1039/C5Nr08566G |
0.426 |
|
2016 |
Parsons GN, Kalanyan B, Atanasov SE, Lemaire P, Oldham C. (Invited) Using Inherent Substrate-Dependent Nucleation to Promote Metal and Metal Oxide Selective-Area Atomic Layer Deposition Ecs Transactions. 75: 77-83. DOI: 10.1149/07506.0077ecst |
0.309 |
|
2016 |
Atanasov SE, Kalanyan B, Parsons GN. Inherent substrate-dependent growth initiation and selective-area atomic layer deposition of TiO2 using "water-free" metal-halide/metal alkoxide reactants Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4938481 |
0.511 |
|
2016 |
Brozena AH, Oldham CJ, Parsons GN. Atomic layer deposition on polymer fibers and fabrics for multifunctional and electronic textiles Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4938104 |
0.478 |
|
2016 |
Lemaire PC, Oldham CJ, Parsons GN. Rapid visible color change and physical swelling during water exposure in triethanolamine-metalcone films formed by molecular layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4937222 |
0.42 |
|
2016 |
Mundy JZ, Shafiefarhood A, Li F, Khan SA, Parsons GN. Low temperature platinum atomic layer deposition on nylon-6 for highly conductive and catalytic fiber mats Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4935448 |
0.505 |
|
2016 |
Kalanyan B, Lemaire PC, Atanasov SE, Ritz MJ, Parsons GN. Using Hydrogen to Expand the Inherent Substrate Selectivity Window during Tungsten Atomic Layer Deposition Chemistry of Materials. 28: 117-126. DOI: 10.1021/Acs.Chemmater.5B03319 |
0.533 |
|
2016 |
Kim DH, Losego MD, Peng Q, Parsons GN. Thin Films: Atomic Layer Deposition for Sensitized Solar Cells: Recent Progress and Prospects (Adv. Mater. Interfaces 21/2016) Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201670102 |
0.751 |
|
2016 |
Daubert JS, Mundy JZ, Parsons GN. Kevlar-Based Supercapacitor Fibers with Conformal Pseudocapacitive Metal Oxide and Metal Formed by ALD Advanced Materials Interfaces. 3: 1600355. DOI: 10.1002/Admi.201600355 |
0.459 |
|
2016 |
Kim DH, Losego MD, Peng Q, Parsons GN. Atomic Layer Deposition for Sensitized Solar Cells: Recent Progress and Prospects Advanced Materials Interfaces. 3: 1600354. DOI: 10.1002/Admi.201600354 |
0.76 |
|
2016 |
Dandley EC, Lemaire PC, Zhu Z, Yoon A, Sheet L, Parsons GN. Wafer-Scale Selective-Area Deposition of Nanoscale Metal Oxide Features Using Vapor Saturation into Patterned Poly(methyl methacrylate) Templates Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201500431 |
0.414 |
|
2015 |
Zhao J, Nunn WT, Lemaire PC, Lin Y, Dickey MD, Walls HJ, Peterson GW, Losego MD, Parsons GN. Facile Conversion of Hydroxy Double Salts to Metal-Organic Frameworks Using Metal Oxide Particles and Atomic Layer Deposition Thin Film Templates. Journal of the American Chemical Society. PMID 26456471 DOI: 10.1021/Jacs.5B08752 |
0.762 |
|
2015 |
Mousa MB, Oldham CJ, Parsons GN. Precise Nanoscale Surface Modification and Coating of Macroscale Objects: Open-Environment in Loco Atomic Layer Deposition on an Automobile. Acs Applied Materials & Interfaces. 7: 19523-9. PMID 26270083 DOI: 10.1021/Acsami.5B05262 |
0.515 |
|
2015 |
Sweet WJ, Parsons GN. In Situ Conductance Analysis of Zinc Oxide Nucleation and Coalescence during Atomic Layer Deposition on Metal Oxides and Polymers. Langmuir : the Acs Journal of Surfaces and Colloids. PMID 26018196 DOI: 10.1021/Acs.Langmuir.5B00665 |
0.51 |
|
2015 |
Kim do H, Atanasov SE, Lemaire P, Lee K, Parsons GN. Platinum-free cathode for dye-sensitized solar cells using poly(3,4-ethylenedioxythiophene) (PEDOT) formed via oxidative molecular layer deposition. Acs Applied Materials & Interfaces. 7: 3866-70. PMID 25668707 DOI: 10.1021/Am5084418 |
0.719 |
|
2015 |
Hilton GM, Taylor AJ, McClure CD, Parsons GN, Bonner JC, Bereman MS. Toxicoproteomic analysis of pulmonary carbon nanotube exposure using LC-MS/MS. Toxicology. 329: 80-7. PMID 25598225 DOI: 10.1016/J.Tox.2015.01.011 |
0.662 |
|
2015 |
Sweet WJ, Oldham CJ, Parsons GN. Conductivity and touch-sensor application for atomic layer deposition ZnO and Al:ZnO on nylon nonwoven fiber mats Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4900718 |
0.454 |
|
2015 |
Bagal A, Dandley EC, Zhao J, Zhang XA, Oldham CJ, Parsons GN, Chang CH. Multifunctional nano-accordion structures for stretchable transparent conductors Materials Horizons. 2: 486-494. DOI: 10.1039/C5Mh00070J |
0.543 |
|
2015 |
Zhao J, Gong B, Nunn WT, Lemaire PC, Stevens EC, Sidi FI, Williams PS, Oldham CJ, Walls HJ, Shepherd SD, Browe MA, Peterson GW, Losego MD, Parsons GN. Conformal and highly adsorptive metal-organic framework thin films via layer-by-layer growth on ALD-coated fiber mats Journal of Materials Chemistry A. 3: 1458-1464. DOI: 10.1039/C4Ta05501B |
0.741 |
|
2015 |
Knauf RR, Kalanyan B, Parsons GN, Dempsey JL. Charge Recombination Dynamics in Sensitized SnO2/TiO2 Core/Shell Photoanodes Journal of Physical Chemistry C. 119: 28353-28360. DOI: 10.1021/Acs.Jpcc.5B10574 |
0.384 |
|
2015 |
Daubert JS, Lewis NP, Gotsch HN, Mundy JZ, Monroe DN, Dickey EC, Losego MD, Parsons GN. Effect of Meso- and Micro-Porosity in Carbon Electrodes on Atomic Layer Deposition of Pseudocapacitive V2O5 for High Performance Supercapacitors Chemistry of Materials. 27: 6524-6534. DOI: 10.1021/Acs.Chemmater.5B01602 |
0.669 |
|
2015 |
McClure CD, Oldham CJ, Parsons GN. Effect of Al2O3 ALD coating and vapor infusion on the bulk mechanical response of elastic and viscoelastic polymers Surface and Coatings Technology. 261: 411-417. DOI: 10.1016/J.Surfcoat.2014.10.029 |
0.775 |
|
2015 |
Vogel NA, Williams PS, Brozena AH, Sen D, Atanasov S, Parsons GN, Khan SA. Delayed Dissolution and Small Molecule Release from Atomic Layer Deposition Coated Electrospun Nanofibers Advanced Materials Interfaces. DOI: 10.1002/Admi.201500229 |
0.424 |
|
2015 |
Zhang XA, Bagal A, Dandley EC, Zhao J, Oldham CJ, Wu BI, Parsons GN, Chang CH. Ordered 3D Thin-Shell Nanolattice Materials with Near-Unity Refractive Indices Advanced Functional Materials. 25: 6644-6649. DOI: 10.1002/Adfm.201502854 |
0.421 |
|
2014 |
Taylor AJ, McClure CD, Shipkowski KA, Thompson EA, Hussain S, Garantziotis S, Parsons GN, Bonner JC. Atomic layer deposition coating of carbon nanotubes with aluminum oxide alters pro-fibrogenic cytokine expression by human mononuclear phagocytes in vitro and reduces lung fibrosis in mice in vivo. Plos One. 9: e106870. PMID 25216247 DOI: 10.1371/Journal.Pone.0106870 |
0.677 |
|
2014 |
Lee K, Kim do H, Parsons GN. Free-floating synthetic nanosheets by atomic layer deposition. Acs Applied Materials & Interfaces. 6: 10981-5. PMID 24979745 DOI: 10.1021/Am502850P |
0.747 |
|
2014 |
Song W, Vannucci AK, Farnum BH, Lapides AM, Brennaman MK, Kalanyan B, Alibabaei L, Concepcion JJ, Losego MD, Parsons GN, Meyer TJ. Visible light driven benzyl alcohol dehydrogenation in a dye-sensitized photoelectrosynthesis cell. Journal of the American Chemical Society. 136: 9773-9. PMID 24933178 DOI: 10.1021/Ja505022F |
0.652 |
|
2014 |
Sweet WJ, Oldham CJ, Parsons GN. Atomic layer deposition of metal oxide patterns on nonwoven fiber mats using localized physical compression. Acs Applied Materials & Interfaces. 6: 9280-9. PMID 24850237 DOI: 10.1021/Am501582P |
0.417 |
|
2014 |
Alibabaei L, Farnum BH, Kalanyan B, Brennaman MK, Losego MD, Parsons GN, Meyer TJ. Atomic layer deposition of TiO2 on mesoporous nanoITO: conductive core-shell photoanodes for dye-sensitized solar cells. Nano Letters. 14: 3255-61. PMID 24846703 DOI: 10.1021/Nl5006433 |
0.687 |
|
2014 |
Kim do H, Losego MD, Hanson K, Alibabaei L, Lee K, Meyer TJ, Parsons GN. Stabilizing chromophore binding on TiO2 for long-term stability of dye-sensitized solar cells using multicomponent atomic layer deposition. Physical Chemistry Chemical Physics : Pccp. 16: 8615-22. PMID 24676056 DOI: 10.1039/C4Cp01130A |
0.792 |
|
2014 |
Mousa MB, Oldham CJ, Parsons GN. Atmospheric pressure atomic layer deposition of Al₂O₃ using trimethyl aluminum and ozone. Langmuir : the Acs Journal of Surfaces and Colloids. 30: 3741-8. PMID 24617608 DOI: 10.1021/La500796R |
0.361 |
|
2014 |
Gorham CS, Gaskins JT, Parsons GN, Losego MD, Hopkins PE. Density dependence of the room temperature thermal conductivity of atomic layer deposition-grown amorphous alumina (Al2O3) Applied Physics Letters. 104. DOI: 10.1063/1.4885415 |
0.68 |
|
2014 |
Dandley EC, Needham CD, Williams PS, Brozena AH, Oldham CJ, Parsons GN. Temperature-dependent reaction between trimethylaluminum and poly(methyl methacrylate) during sequential vapor infiltration: Experimental and ab initio analysis Journal of Materials Chemistry C. 2: 9416-9424. DOI: 10.1039/C4Tc01293C |
0.432 |
|
2014 |
Atanasov SE, Oldham CJ, Slusarski KA, Taggart-Scarff J, Sherman SA, Senecal KJ, Filocamo SF, McAllister QP, Wetzel ED, Parsons GN. Improved cut-resistance of Kevlar® using controlled interface reactions during atomic layer deposition of ultrathin (<50 Å) inorganic coatings Journal of Materials Chemistry A. 2: 17371-17379. DOI: 10.1039/C4Ta03662J |
0.497 |
|
2014 |
Lee K, Losego MD, Kim DH, Parsons GN. High performance photocatalytic metal oxide synthetic bi-component nanosheets formed by atomic layer deposition Materials Horizons. 1: 419-423. DOI: 10.1039/C4Mh00012A |
0.824 |
|
2014 |
Mousa MBM, Oldham CJ, Parsons GN. Atmospheric pressure atomic layer deposition of Al2O3 using trimethyl aluminum and ozone Langmuir. 30: 3741-3748. DOI: 10.1021/la500796r |
0.318 |
|
2014 |
Atanasov SE, Losego MD, Gong B, Sachet E, Maria JP, Williams PS, Parsons GN. Highly conductive and conformal poly(3,4-ethylenedioxythiophene) (PEDOT) thin films via oxidative molecular layer deposition Chemistry of Materials. 26: 3471-3478. DOI: 10.1021/Cm500825B |
0.717 |
|
2014 |
Lee K, Kim DH, Parsons GN. Free-floating synthetic nanosheets by atomic layer deposition Acs Applied Materials and Interfaces. 6: 10981-10985. DOI: 10.1021/am502850p |
0.725 |
|
2014 |
Zhao J, Losego MD, Lemaire PC, Williams PS, Gong B, Atanasov SE, Blevins TM, Oldham CJ, Walls HJ, Shepherd SD, Browe MA, Peterson GW, Parsons GN. Metal-Organic Frameworks: Highly Adsorptive, MOF-Functionalized Nonwoven Fiber Mats for Hazardous Gas Capture Enabled by Atomic Layer Deposition (Adv. Mater. Interfaces 4/2014) Advanced Materials Interfaces. 1. DOI: 10.1002/Admi.201470023 |
0.723 |
|
2014 |
Zhao J, Losego MD, Lemaire PC, Williams PS, Gong B, Atanasov SE, Blevins TM, Oldham CJ, Walls HJ, Shepherd SD, Browe MA, Peterson GW, Parsons GN. Highly Adsorptive, MOF-Functionalized Nonwoven Fiber Mats for Hazardous Gas Capture Enabled by Atomic Layer Deposition Advanced Materials Interfaces. 1. DOI: 10.1002/Admi.201400040 |
0.683 |
|
2013 |
Vannucci AK, Alibabaei L, Losego MD, Concepcion JJ, Kalanyan B, Parsons GN, Meyer TJ. Crossing the divide between homogeneous and heterogeneous catalysis in water oxidation. Proceedings of the National Academy of Sciences of the United States of America. 110: 20918-22. PMID 24277824 DOI: 10.1073/Pnas.1319832110 |
0.631 |
|
2013 |
Alibabaei L, Brennaman MK, Norris MR, Kalanyan B, Song W, Losego MD, Concepcion JJ, Binstead RA, Parsons GN, Meyer TJ. Solar water splitting in a molecular photoelectrochemical cell. Proceedings of the National Academy of Sciences of the United States of America. 110: 20008-13. PMID 24277806 DOI: 10.1073/pnas.1319628110 |
0.623 |
|
2013 |
Arpin KA, Losego MD, Cloud AN, Ning H, Mallek J, Sergeant NP, Zhu L, Yu Z, Kalanyan B, Parsons GN, Girolami GS, Abelson JR, Fan S, Braun PV. Three-dimensional self-assembled photonic crystals with high temperature stability for thermal emission modification. Nature Communications. 4: 2630. PMID 24129680 DOI: 10.1038/Ncomms3630 |
0.592 |
|
2013 |
Hanson K, Losego MD, Kalanyan B, Parsons GN, Meyer TJ. Stabilizing small molecules on metal oxide surfaces using atomic layer deposition. Nano Letters. 13: 4802-9. PMID 23978281 DOI: 10.1021/Nl402416S |
0.697 |
|
2013 |
Kalanyan B, Oldham CJ, Sweet WJ, Parsons GN. Highly conductive and flexible nylon-6 nonwoven fiber mats formed using tungsten atomic layer deposition. Acs Applied Materials & Interfaces. 5: 5253-9. PMID 23724894 DOI: 10.1021/Am401095R |
0.504 |
|
2013 |
Kim DH, Woodroof M, Lee K, Parsons GN. Atomic layer deposition of high performance ultrathin TiO2 blocking layers for dye-sensitized solar cells Chemsuschem. 6: 1014-1020. PMID 23720440 DOI: 10.1002/Cssc.201300067 |
0.752 |
|
2013 |
Peng Q, Kalanyan B, Hoertz PG, Miller A, Kim DH, Hanson K, Alibabaei L, Liu J, Meyer TJ, Parsons GN, Glass JT. Solution-processed, antimony-doped tin oxide colloid films enable high-performance TiO2 photoanodes for water splitting Nano Letters. 13: 1481-1488. PMID 23537229 DOI: 10.1021/Nl3045525 |
0.6 |
|
2013 |
Aykut Y, Parsons GN, Pourdeyhimi B, Khan SA. Synthesis of mixed ceramic Mg(x)Zn(1-x)O nanofibers via Mg2+ doping using sol-gel electrospinning. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 4159-66. PMID 23461585 DOI: 10.1021/La400281C |
0.303 |
|
2013 |
Lucovsky G, Parsons G, Zeller D, Kim J. Spectroscopic detection of medium range order in device grade hydrogenated amorphous silicon Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.04Cr10 |
0.771 |
|
2013 |
Loebl AJ, Oldham CJ, Devine CK, Gong B, Atanasov SE, Parsons GN, Fedkiw PS. Solid electrolyte interphase on lithium-ion carbon nanofiber electrodes by atomic and molecular layer deposition Journal of the Electrochemical Society. 160: A1971-A1978. DOI: 10.1149/2.020311Jes |
0.373 |
|
2013 |
McClure CD, Oldham CJ, Walls HJ, Parsons GN. Large effect of titanium precursor on surface reactivity and mechanical strength of electrospun nanofibers coated with TiO2 by atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4817718 |
0.768 |
|
2013 |
Parsons GN, Elam JW, George SM, Haukka S, Jeon H, Kessels WMM, Leskelä M, Poodt P, Ritala M, Rossnagel SM. History of atomic layer deposition and its relationship with the American Vacuum Society Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4816548 |
0.429 |
|
2013 |
Sweet WJ, Jur JS, Parsons GN. Bi-layer Al2O3/ZnO atomic layer deposition for controllable conductive coatings on polypropylene nonwoven fiber mats Journal of Applied Physics. 113. DOI: 10.1063/1.4804960 |
0.805 |
|
2013 |
Hanson K, Losego MD, Kalanyan B, Ashford DL, Parsons GN, Meyer TJ. Stabilization of [Ru(bpy)2(4,4′-(PO3H 2)bpy)]2+ on mesoporous TiO2 with atomic layer deposition of Al2O3 Chemistry of Materials. 25: 3-5. DOI: 10.1021/Cm303172W |
0.69 |
|
2013 |
Lucovsky G, Parsons G, Zeller D, Wu K, Papas B, Whitten J, Lujan R, Street RA. Spectroscopic detection of medium range order in hydrogenated amorphous silicon, a-Si(H): Applications in photovolatics, thin film transistors and Si-based microelectronics Physics Procedia. 44: 91-98. DOI: 10.1016/J.Phpro.2013.04.012 |
0.724 |
|
2013 |
Parsons GN, Atanasov SE, Dandley EC, Devine CK, Gong B, Jur JS, Lee K, Oldham CJ, Peng Q, Spagnola JC, Williams PS. Mechanisms and reactions during atomic layer deposition on polymers Coordination Chemistry Reviews. 257: 3323-3331. DOI: 10.1016/J.Ccr.2013.07.001 |
0.807 |
|
2013 |
Petrochenko PE, Scarel G, Hyde GK, Parsons GN, Skoog SA, Zhang Q, Goering PL, Narayan RJ. Prevention of ultraviolet (UV)-induced surface damage and cytotoxicity of polyethersulfone using atomic layer deposition (ALD) titanium dioxide Jom. 65: 550-556. DOI: 10.1007/S11837-013-0565-8 |
0.812 |
|
2013 |
Kalanyan B, Losego MD, Oldham CJ, Parsons GN. Low-temperature atomic layer deposition of tungsten using tungsten hexafluoride and highly-diluted silane in argon Chemical Vapor Deposition. 19: 161-166. DOI: 10.1002/Cvde.201307053 |
0.724 |
|
2013 |
Kim DH, Woodroof M, Lee K, Parsons GN. Cover Picture: Atomic Layer Deposition of High Performance Ultrathin TiO2Blocking Layers for Dye-Sensitized Solar Cells (ChemSusChem 6/2013) Chemsuschem. 6: 929-929. DOI: 10.1002/Cssc.201390023 |
0.741 |
|
2012 |
Akyildiz HI, Padbury RP, Parsons GN, Jur JS. Temperature and exposure dependence of hybrid organic-inorganic layer formation by sequential vapor infiltration into polymer fibers Langmuir. 28: 15697-15704. PMID 23050951 DOI: 10.1021/La302991C |
0.795 |
|
2012 |
Gong B, Kim do H, Parsons GN. Mesoporous metal oxides by vapor infiltration and atomic layer deposition on ordered surfactant polymer films. Langmuir : the Acs Journal of Surfaces and Colloids. 28: 11906-13. PMID 22809333 DOI: 10.1021/La302027B |
0.485 |
|
2012 |
Peng Q, Efimenko K, Genzer J, Parsons GN. Oligomer orientation in vapor-molecular-layer-deposited alkyl-aromatic polyamide films Langmuir. 28: 10464-10470. PMID 22765908 DOI: 10.1021/La3017936 |
0.602 |
|
2012 |
Kim do H, Koo HJ, Jur JS, Woodroof M, Kalanyan B, Lee K, Devine CK, Parsons GN. Stable anatase TiO₂ coating on quartz fibers by atomic layer deposition for photoactive light-scattering in dye-sensitized solar cells. Nanoscale. 4: 4731-8. PMID 22751846 DOI: 10.1039/C2Nr30939D |
0.816 |
|
2012 |
Gong B, Parsons GN. Caprolactone ring-opening molecular layer deposition of organic-aluminum oxide polymer films Ecs Journal of Solid State Science and Technology. 1: P210-P215. DOI: 10.1149/2.023204Jss |
0.465 |
|
2012 |
Peng Q, Lewis JS, Hoertz PG, Glass JT, Parsons GN. Atomic layer deposition for electrochemical energy generation and storage systems Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3672027 |
0.504 |
|
2012 |
Lee K, Jur JS, Kim DH, Parsons GN. Mechanisms for hydrophilic/hydrophobic wetting transitions on cellulose cotton fibers coated using Al 2O 3 atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3671942 |
0.842 |
|
2012 |
Park KJ, Parsons GN. Atomic layer deposition of Ru onto organic monolayers: Shifting metal effective work function using monolayer structure Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3671938 |
0.663 |
|
2012 |
Gong B, Spagnola JC, Parsons GN. Hydrophilic mechanical buffer layers and stable hydrophilic finishes on polydimethylsiloxane using combined sequential vapor infiltration and atomic/molecular layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3670963 |
0.825 |
|
2012 |
Mousa MBM, Oldham CJ, Jur JS, Parsons GN. Effect of temperature and gas velocity on growth per cycle during Al 2O 3 and ZnO atomic layer deposition at atmospheric pressure Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3670961 |
0.768 |
|
2012 |
Poodt P, Cameron DC, Dickey E, George SM, Kuznetsov V, Parsons GN, Roozeboom F, Sundaram G, Vermeer A. Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3670745 |
0.467 |
|
2012 |
Hanson CA, Oldham CJ, Parsons GN. Paper deacidification and UV protection using ZnO atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3656251 |
0.357 |
|
2012 |
Vasquez KA, Vincent-Johnson AJ, Hughes WC, Augustine BH, Lee K, Parsons GN, Scarel G. Wetting properties induced in nano-composite POSS-MA polymer films by atomic layer deposited oxides Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3639134 |
0.837 |
|
2012 |
Gong B, Parsons GN. Quantitative in situ infrared analysis of reactions between trimethylaluminum and polymers during Al 2O 3 atomic layer deposition Journal of Materials Chemistry. 22: 15672-15682. DOI: 10.1039/C2Jm32343E |
0.4 |
|
2012 |
Gong B, Kim DH, Parsons GN. Mesoporous metal oxides by vapor infiltration and atomic layer deposition on ordered surfactant polymer films Langmuir. 28: 11906-11913. DOI: 10.1021/la302027b |
0.527 |
|
2012 |
Gong B, Spagnola JC, Arvidson SA, Khan SA, Parsons GN. Directed inorganic modification of bi-component polymer fibers by selective vapor reaction and atomic layer deposition Polymer (United Kingdom). 53: 4631-4636. DOI: 10.1016/J.Polymer.2012.08.018 |
0.817 |
|
2012 |
Parsons GN. Atomic Layer Deposition on Soft Materials Atomic Layer Deposition of Nanostructured Materials. 271-300. DOI: 10.1002/9783527639915.ch12 |
0.336 |
|
2011 |
Devine CK, Oldham CJ, Jur JS, Gong B, Parsons GN. Fiber containment for improved laboratory handling and uniform nanocoating of milligram quantities of carbon nanotubes by atomic layer deposition Langmuir. 27: 14497-14507. PMID 22070742 DOI: 10.1021/La202677U |
0.783 |
|
2011 |
Wang X, Krommenhoek PJ, Bradford PD, Gong B, Tracy JB, Parsons GN, Luo TJM, Zhu YT. Coating alumina on catalytic iron oxide nanoparticles for synthesizing vertically aligned carbon nanotube arrays Acs Applied Materials and Interfaces. 3: 4180-4184. PMID 21985010 DOI: 10.1021/Am201082M |
0.312 |
|
2011 |
Johnston-Peck AC, Scarel G, Wang J, Parsons GN, Tracy JB. Sinter-free phase conversion and scanning transmission electron microscopy of FePt nanoparticle monolayers Nanoscale. 3: 4142-4149. PMID 21869998 DOI: 10.1039/C1Nr10567A |
0.621 |
|
2011 |
Gong B, Peng Q, Parsons GN. Conformal organic-inorganic hybrid network polymer thin films by molecular layer deposition using trimethylaluminum and glycidol. The Journal of Physical Chemistry. B. 115: 5930-8. PMID 21513280 DOI: 10.1021/Jp201186K |
0.622 |
|
2011 |
Peng Q, Gong B, Parsons GN. Making inert polypropylene fibers chemically responsive by combining atomic layer deposition and vapor phase chemical grafting Nanotechnology. 22. PMID 21389578 DOI: 10.1088/0957-4484/22/15/155601 |
0.549 |
|
2011 |
Hyde GK, Stewart SM, Scarel G, Parsons GN, Shih CC, Shih CM, Lin SJ, Su YY, Monteiro-Riviere NA, Narayan RJ. Atomic layer deposition of titanium dioxide on cellulose acetate for enhanced hemostasis Biotechnology Journal. 6: 213-223. PMID 21298806 DOI: 10.1002/Biot.201000342 |
0.849 |
|
2011 |
Jur JS, Parsons GN. Atomic layer deposition of Al(2)O(3) and ZnO at atmospheric pressure in a flow tube reactor. Acs Applied Materials & Interfaces. 3: 299-308. PMID 21265563 DOI: 10.1021/Am100940G |
0.765 |
|
2011 |
Parsons GN, George SM, Knez M. Progress and future directions for atomic layer deposition and ALD-based chemistry Mrs Bulletin. 36: 865-871. DOI: 10.1557/Mrs.2011.238 |
0.475 |
|
2011 |
Kalanyan B, Parsons GN. Atomic layer deposited oxides for passivation of silicon photoanodes for solar photoelectrochemical cells Ecs Transactions. 41: 285-292. DOI: 10.1149/1.3633679 |
0.357 |
|
2011 |
Oldham CJ, Gong B, Spagnola JC, Jur JS, Senecal KJ, Godfrey TA, Parsons GN. Encapsulation and chemical resistance of electrospun nylon nanofibers coated using integrated atomic and molecular layer deposition Journal of the Electrochemical Society. 158: D549-D556. DOI: 10.1149/1.3609046 |
0.823 |
|
2011 |
Kim E, Lee K, Kim D, Parsons GN, Park K. SiNx charge trap nonvolatile memory based on ZnO thin film transistor prepared by atomic layer deposition Aip Conference Proceedings. 1399: 151-152. DOI: 10.1063/1.3666301 |
0.703 |
|
2011 |
Kim E, Kim Y, Han Kim D, Lee K, Parsons GN, Park K. SiNx charge-trap nonvolatile memory based on ZnO thin-film transistors Applied Physics Letters. 99. DOI: 10.1063/1.3640221 |
0.704 |
|
2011 |
Gong B, Peng Q, Parsons GN. Conformal Organic-inorganic hybrid network polymer thin films by molecular layer deposition using trimethylaluminum and glycidol Journal of Physical Chemistry B. 115: 5930-5938. DOI: 10.1021/jp201186k |
0.491 |
|
2011 |
Gong B, Peng Q, Jur JS, Devine CK, Lee K, Parsons GN. Sequential vapor infiltration of metal oxides into sacrificial polyester fibers: Shape replication and controlled porosity of microporous/mesoporous oxide monoliths Chemistry of Materials. 23: 3476-3485. DOI: 10.1021/Cm200694W |
0.806 |
|
2011 |
Jur JS, Parsons GN. Atomic layer deposition of Al 2O 3 and ZnO at atmospheric pressure in a flow tube reactor Acs Applied Materials and Interfaces. 3: 299-308. DOI: 10.1021/am100940g |
0.755 |
|
2011 |
Johnston-Peck A, Scarel G, Wang J, Parsons G, Tracy J. Order-Disorder Phase Conversion of FePt Nanoparticles for Ultrahigh-Density Magnetic Recording Microscopy and Microanalysis. 17: 1830-1831. DOI: 10.1017/S1431927611010026 |
0.588 |
|
2011 |
Gong B, Peng Q, Na JS, Parsons GN. Highly active photocatalytic ZnO nanocrystalline rods supported on polymer fiber mats: Synthesis using atomic layer deposition and hydrothermal crystal growth Applied Catalysis a: General. 407: 211-216. DOI: 10.1016/J.Apcata.2011.08.041 |
0.718 |
|
2011 |
Jur JS, Sweet WJ, Oldham CJ, Parsons GN. Electronic Textiles: Atomic Layer Deposition of Conductive Coatings on Cotton, Paper, and Synthetic Fibers: Conductivity Analysis and Functional Chemical Sensing Using “All-Fiber” Capacitors (Adv. Funct. Mater. 11/2011) Advanced Functional Materials. 21: 1948-1948. DOI: 10.1002/Adfm.201190035 |
0.795 |
|
2011 |
Jur JS, Sweet WJ, Oldham CJ, Parsons GN. Atomic layer deposition of conductive coatings on cotton, paper, and synthetic fibers: Conductivity analysis and functional chemical sensing using "all-fiber" capacitors Advanced Functional Materials. 21: 1993-2002. DOI: 10.1002/Adfm.201001756 |
0.773 |
|
2011 |
Sweet W, Devine C, Oldham C, Parsons GN, Jur JS. Electronic nonwovens by atomic layer deposition Innovative Nonwovens Conference 2011, Netinc. 652-685. |
0.331 |
|
2011 |
Lucovsky G, Parsons G, Zeller D, Wu K, Papas B, Whitten J, Lujan R, Street RA. Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H) Journal of Optoelectronics and Advanced Materials. 13: 1586-1589. |
0.402 |
|
2010 |
Scarel G, Na JS, Parsons GN. Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer deposition. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 22: 155401. PMID 21389555 DOI: 10.1088/0953-8984/22/15/155401 |
0.785 |
|
2010 |
Jur JS, Spagnola JC, Lee K, Gong B, Peng Q, Parsons GN. Temperature-dependent subsurface growth during atomic layer deposition on polypropylene and cellulose fibers Langmuir. 26: 8239-8244. PMID 20163129 DOI: 10.1021/La904604Z |
0.836 |
|
2010 |
Scarel G, Na JS, Gong B, Parsons GN. Phonon response in the infrared region to thickness of oxide films formed by atomic layer deposition. Applied Spectroscopy. 64: 120-6. PMID 20132607 DOI: 10.1366/000370210790571954 |
0.79 |
|
2010 |
Hyde GK, Scarel G, Spagnola JC, Peng Q, Lee K, Gong B, Roberts KG, Roth KM, Hanson CA, Devine CK, Stewart SM, Hojo D, Na JS, Jur JS, Parsons GN. Atomic layer deposition and abrupt wetting transitions on nonwoven polypropylene and woven cotton fabrics. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 2550-8. PMID 19799446 DOI: 10.1021/La902830D |
0.82 |
|
2010 |
Oldham CJ, Gong B, Spagnola JC, Jur JS, Senecal KJ, Godfrey TA, Parsons GN. Atomic layer deposition on polymers: Applications to physical encapsulation of electrospun nylon nanofibers Ecs Transactions. 33: 279-290. DOI: 10.1149/1.3485265 |
0.819 |
|
2010 |
Spagnola JC, Gong B, Parsons GN. Surface texture and wetting stability of polydimethylsiloxane coated with aluminum oxide at low temperature by atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 1330-1337. DOI: 10.1116/1.3488604 |
0.834 |
|
2010 |
Scarel G, Na JS, Parsons GN. Angular behavior of the Berreman effect investigated in uniform Al 2O3 layers formed by atomic layer deposition Journal of Physics Condensed Matter. 22. DOI: 10.1088/0953-8984/22/15/155401 |
0.75 |
|
2010 |
Spagnola JC, Gong B, Arvidson SA, Jur JS, Khan SA, Parsons GN. Surface and sub-surface reactions during low temperature aluminium oxide atomic layer deposition on fiber-forming polymers Journal of Materials Chemistry. 20: 4213-4222. DOI: 10.1039/C0Jm00355G |
0.826 |
|
2010 |
Na JS, Scarel G, Parsons GN. In situ analysis of dopant incorporation, activation, and film growth during thin film ZnO ZnO:Al Atomic layer deposition Journal of Physical Chemistry C. 114: 383-388. DOI: 10.1021/Jp908332Q |
0.801 |
|
2010 |
Gittard SD, Hojo D, Hyde GK, Scarel G, Narayan RJ, Parsons GN. Antifungal textiles formed using silver deposition in supercritical carbon dioxide Journal of Materials Engineering and Performance. 19: 368-373. DOI: 10.1007/S11665-009-9514-7 |
0.795 |
|
2010 |
Scarel G, Na JS, Gong B, Parsons GN. Phonon response in the infrared region to thickness of oxide films formed by atomic layer deposition Applied Spectroscopy. 64: 120-126. |
0.791 |
|
2009 |
Na JS, Gong B, Scarel G, Parsons GN. Surface polarity shielding and hierarchical ZnO nano-architectures produced using sequential hydrothermal crystal synthesis and thin film atomic layer deposition Acs Nano. 3: 3191-3199. PMID 19785432 DOI: 10.1021/Nn900702E |
0.779 |
|
2009 |
Peng Q, Sun XY, Spagnola JC, Saquing C, Khan SA, Spontak RJ, Parsons GN. Bi-directional Kirkendall effect in coaxial microtube nanolaminate assemblies fabricated by atomic layer deposition. Acs Nano. 3: 546-54. PMID 19222233 DOI: 10.1021/Nn8006543 |
0.834 |
|
2009 |
Hyde GK, McCullen SD, Jeon S, Stewart SM, Jeon H, Loboa EG, Parsons GN. Atomic layer deposition and biocompatibility of titanium nitride nano-coatings on cellulose fiber substrates Biomedical Materials. 4. PMID 19208941 DOI: 10.1088/1748-6041/4/2/025001 |
0.834 |
|
2009 |
Peng Q, Sun XY, Spagnola JC, Saquing C, Khan SA, Spontak RJ, Parsons GN. Bi-directional kirkendall effect in coaxial microtube nanolaminate assemblies fabricated by atomic layer deposition Acs Nano. 3: 546-554. DOI: 10.1021/nn8006543 |
0.802 |
|
2009 |
Na JS, Peng Q, Scarel G, Parsons GN. Role of gas doping sequence in surface reactions and dopant incorporation during atomic layer deposition of Al-Doped ZnO Chemistry of Materials. 21: 5585-5593. DOI: 10.1021/Cm901404P |
0.812 |
|
2009 |
Peng Q, Gong B, VanGundy RM, Parsons GN. "Zincone" zinc oxide - Organic hybrid polymer thin films formed by molecular layer deposition Chemistry of Materials. 21: 820-830. DOI: 10.1021/Cm8020403 |
0.603 |
|
2008 |
Hojo D, Hyde GK, Spagnola J, Parsons GN. 3-Dimensional AI2O3 fiber networks using low temperature atomic layer deposition on a cotton template Materials Research Society Symposium Proceedings. 1054: 32-37. DOI: 10.1557/Proc-1054-Ff03-08 |
0.802 |
|
2008 |
Peng Q, Spagnola JC, Parsons GN. Self-catalyzed hydrogenolysis of nickelocene: Functional metal coating of three-dimensional nanosystems at low temperature Journal of the Electrochemical Society. 155: D580-D582. DOI: 10.1149/1.2946723 |
0.808 |
|
2008 |
Peng Q, Spagnola JC, Daisuke H, Park KJ, Parsons GN. Conformal metal oxide coatings on nanotubes by direct low temperature metal-organic pyrolysis in supercritical carbon dioxide Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 978-982. DOI: 10.1116/1.2917072 |
0.812 |
|
2008 |
Scarel G, Hyde GK, Hojo D, Parsons GN. Berreman effect in infrared absorption spectroscopy of ionic oxide coatings formed by atomic layer deposition on three-dimensional structures Journal of Applied Physics. 104. DOI: 10.1063/1.3013439 |
0.804 |
|
2008 |
Na JS, Ayres JA, Chandra KL, Gorman CB, Parsons GN. Nanoencapsulation and stabilization of single-molecule/particle electronic nanoassemblies using low-temperature atomic layer deposition Journal of Physical Chemistry C. 112: 20510-20517. DOI: 10.1021/Jp8066298 |
0.604 |
|
2008 |
Peng Q, Hojo D, Park KJ, Parsons GN. Low temperature metal oxide film deposition and reaction kinetics in supercritical carbon dioxide Thin Solid Films. 516: 4997-5003. DOI: 10.1016/J.Tsf.2007.10.057 |
0.795 |
|
2007 |
Na JS, Ayres J, Chandra KL, Gorman CB, Parsons GN. Real-time conductivity analysis through single-molecule electrical junctions. Nanotechnology. 18: 424001. PMID 21730434 DOI: 10.1088/0957-4484/18/42/424001 |
0.617 |
|
2007 |
Na JS, Ayres J, Chandra KL, Chu C, Gorman CB, Parsons GN. Conduction mechanisms and stability of single molecule nanoparticle/molecule/nanoparticle junctions. Nanotechnology. 18: 035203. PMID 19636113 DOI: 10.1088/0957-4484/18/3/035203 |
0.695 |
|
2007 |
Hyde GK, Park KJ, Stewart SM, Hinestroza JP, Parsons GN. Atomic layer deposition of conformal inorganic nanoscale coatings on three-dimensional natural fiber systems: Effect of surface topology on film growth characteristics Langmuir. 23: 9844-9849. PMID 17691748 DOI: 10.1021/La701449T |
0.833 |
|
2007 |
Park KJ, Terry DB, Stewart SM, Parsons GN. In situ auger electron spectroscopy study of atomic layer deposition: growth initiation and interface formation reactions during ruthenium ALD on Si-H, SiO2, and HfO2 surfaces. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 6106-12. PMID 17461600 DOI: 10.1021/La061898U |
0.804 |
|
2007 |
Peng Q, Sun XY, Spagnola JC, Hyde GK, Spontak RJ, Parsons GN. Atomic layer deposition on electrospun polymer fibers as a direct route to AL2O3 microtubes with precise wall thickness control. Nano Letters. 7: 719-22. PMID 17279801 DOI: 10.1021/Nl062948I |
0.829 |
|
2007 |
Chu C, Na JS, Parsons GN. Conductivity in alkylamine/gold and alkanethiol/gold molecular junctions measured in molecule/nanoparticle/molecule bridges and conducting probe structures Journal of the American Chemical Society. 129: 2287-2296. PMID 17279744 DOI: 10.1021/Ja064968S |
0.704 |
|
2007 |
Na JS, Ayres J, Chandra KL, Gorman CB, Parsons GN. Real-time conductivity analysis through single-molecule electrical junctions Nanotechnology. 18. DOI: 10.1088/0957-4484/18/42/424001 |
0.473 |
|
2007 |
Na JS, Ayres J, Chandra KL, Chu C, Gorman CB, Parsons GN. Conduction mechanisms and stability of single molecule nanoparticle/ molecule/nanoparticle junctions Nanotechnology. 18. DOI: 10.1088/0957-4484/18/3/035203 |
0.658 |
|
2007 |
Peng Q, Sun XY, Spagnola JC, Hyde GK, Spontak RJ, Parsons GN. Atomic layer deposition on electrospun polymer fibers as a direct route to Al2O3 microtubes with precise wall thickness control Nano Letters. 7: 719-722. DOI: 10.1021/nl062948i |
0.823 |
|
2007 |
Park KJ, Terry DB, Stewart SM, Parsons GN. In situ auger electron spectroscopy study of atomic layer deposition: Growth initiation and interface formation reactions during ruthenium ALD on Si-H, SiO2, and HfO2 surfaces Langmuir. 23: 6106-6112. DOI: 10.1021/la061898u |
0.788 |
|
2006 |
Osburn CM, Campbell SA, Demkov A, Eisenbraun E, Garfunkel E, Gustafsson T, Kingon AI, Lee J, Lichtenwalner DJ, Lucovsky G, Ma TP, Maria JP, Misra V, Nemanich RJ, Parsons GN, et al. Materials and processes for high k gate stacks: Results from the FEP transition center Ecs Transactions. 3: 389-415. DOI: 10.1149/1.2355729 |
0.335 |
|
2006 |
Chu C, Parsons GN. Solvent enhanced resist flow for room temperature imprint lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 818-822. DOI: 10.1116/1.2180258 |
0.593 |
|
2006 |
Park KJ, Parsons GN. Selective area atomic layer deposition of rhodium and effective work function characterization in capacitor structures Applied Physics Letters. 89. DOI: 10.1063/1.2234846 |
0.671 |
|
2006 |
Barua D, Gougousi T, Young ED, Parsons GN. Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films Applied Physics Letters. 88. DOI: 10.1063/1.2181651 |
0.734 |
|
2006 |
Gougousi T, Terry DB, Parsons GN. Charge generation during oxidation of thin Hf metal films on silicon Thin Solid Films. 513: 201-205. DOI: 10.1016/J.Tsf.2006.02.004 |
0.82 |
|
2005 |
Sivasubramani P, Zhao P, Kim MJ, Gnade BE, Wallace RM, Edge LF, Schlom DG, Parsons GN, Misra V. Thermal stability studies of advanced gate stack structures on Si (100) Aip Conference Proceedings. 788: 156-160. DOI: 10.1063/1.2062955 |
0.393 |
|
2005 |
Park KJ, Doub JM, Gougousi T, Parsons GN. Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1852079 |
0.807 |
|
2005 |
Gougousi T, Barua D, Young ED, Parsons GN. Metal oxide thin films deposited from metal organic precursors in supercritical CO 2 solutions Chemistry of Materials. 17: 5093-5100. DOI: 10.1021/Cm0510965 |
0.737 |
|
2005 |
Kelly MJ, Han JH, Musgrave CB, Parsons GN. In-situ infrared spectroscopy and density functional theory modeling of hafnium alkylamine adsorption on Si-OH and Si-H surfaces Chemistry of Materials. 17: 5305-5314. DOI: 10.1021/Cm051064H |
0.398 |
|
2004 |
Park KJ, Parsons GN. Bulk and interface charge in low temperature silicon nitride for thin film transistors on plastic substrates Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 2256-2260. DOI: 10.1116/1.1795822 |
0.628 |
|
2004 |
Niu D, Ashcraft RW, Hinkle C, Parsons GN. Effect of N 2 plasma on yttrium oxide and yttrium-oxynitride dielectrics Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 445-451. DOI: 10.1116/1.1666880 |
0.747 |
|
2004 |
Gougousi T, Parsons GN. Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H2O and carbon-containing species Journal of Applied Physics. 95: 1391-1396. DOI: 10.1063/1.1636513 |
0.73 |
|
2003 |
Gougousi T, Kelly MJ, Parsons GN. Kinetics of charge generation during formation of Hf and Zr silicate dielectrics Materials Research Society Symposium - Proceedings. 765: 79-84. DOI: 10.1557/Proc-765-D3.4 |
0.716 |
|
2003 |
Niu D, Ashcraft RW, Chen Z, Stemmer S, Parsons GN. Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon Journal of the Electrochemical Society. 150: F102-F109. DOI: 10.1149/1.1566415 |
0.664 |
|
2003 |
Ulrich MD, Rowe JE, Niu D, Parsons GN. Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1792-1796. DOI: 10.1116/1.1593647 |
0.645 |
|
2003 |
Gougousi T, Niu D, Ashcraft RW, Parsons GN. Carbonate formation during post-deposition ambient exposure of high-k dielectrics Applied Physics Letters. 83: 3543-3545. DOI: 10.1063/1.1623316 |
0.767 |
|
2003 |
Gougousi T, Jason Kelly M, Terry DB, Parsons GN. Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon Journal of Applied Physics. 93: 1691-1696. DOI: 10.1063/1.1531818 |
0.83 |
|
2002 |
Misra V, Lucovsky G, Parsons G. Issues in High-ĸ Gate Stack Interfaces Mrs Bulletin. 27: 212-216. DOI: 10.1557/Mrs2002.73 |
0.524 |
|
2002 |
Bray KR, Parsons GN. Surface transport kinetics in low-temperature silicon deposition determined from topography evolution Physical Review B - Condensed Matter and Materials Physics. 65: 353111-353118. DOI: 10.1103/Physrevb.65.035311 |
0.746 |
|
2002 |
Stemmer S, Klenov DO, Chen Z, Niu D, Ashcraft RW, Parsons GN. Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers Applied Physics Letters. 81: 712-714. DOI: 10.1063/1.1496500 |
0.652 |
|
2002 |
Niu D, Ashcraft RW, Chen Z, Stemmer S, Parsons GN. Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon Applied Physics Letters. 81: 676-678. DOI: 10.1063/1.1496138 |
0.632 |
|
2002 |
Gougousi T, Kelly MJ, Parsons GN. The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions Applied Physics Letters. 80: 4419-4421. DOI: 10.1063/1.1485122 |
0.748 |
|
2002 |
Niu D, Ashcraft RW, Parsons GN. Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon Applied Physics Letters. 80: 3575-3577. DOI: 10.1063/1.1477268 |
0.634 |
|
2002 |
Niu D, Ashcraft RW, Kelly MJ, Chambers JJ, Klein TM, Parsons GN. Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications Journal of Applied Physics. 91: 6173-6180. DOI: 10.1063/1.1468253 |
0.777 |
|
2002 |
Bray KR, Gupta A, Parsons GN. Effect of hydrogen on adsorbed precursor diffusion kinetics during hydrogenated amorphous silicon deposition Applied Physics Letters. 80: 2356-2358. DOI: 10.1063/1.1467616 |
0.718 |
|
2002 |
Stemmer S, Klenov D, Chen Z, Maria JP, Kingon AI, Niu D, Parsons GN. Electron energy-loss spectroscopy of alternative gate dielectric stacks Microscopy and Microanalysis. 8: 66-67. DOI: 10.1017/S1431927602101826 |
0.496 |
|
2002 |
Gupta A, Yang H, Parsons GN. Ab initio analysis of silyl precursor physisorption and hydrogen abstraction during low temperature silicon deposition Surface Science. 496: 307-317. DOI: 10.1016/S0039-6028(01)01467-4 |
0.425 |
|
2001 |
Zhong H, Heuss G, Suh Y, Hong S, Misra V, Kelly J, Parsons G. Promising Gate Stacks with Ru & RuO2 Gate Electrodes and Y-silicate Dielectrics Mrs Proceedings. 670. DOI: 10.1557/Proc-670-K3.1 |
0.393 |
|
2001 |
Chambers JJ, Parsons GN. Physical and electrical properties of yttrium silicate thin films Materials Research Society Symposium - Proceedings. 611: C161-C166. DOI: 10.1557/Proc-611-C1.6.1 |
0.351 |
|
2001 |
Chambers JJ, Parsons GN. Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon Journal of Applied Physics. 90: 918-933. DOI: 10.1063/1.1375018 |
0.46 |
|
2001 |
Chambers JJ, Busch BW, Schulte WH, Gustafsson T, Garfunkel E, Wang S, Maher DM, Klein TM, Parsons GN. Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon Applied Surface Science. 181: 78-93. DOI: 10.1016/S0169-4332(01)00373-7 |
0.748 |
|
2000 |
Smith LL, Wang K, Parsons GN, Hernandez R, Brown DT. Selective area cell adhesion on amorphous silicon using patterned self-assembled monolayers Materials Research Society Symposium - Proceedings. 609: A2151-A2156. DOI: 10.1557/Proc-609-A21.5 |
0.404 |
|
2000 |
Gupta A, Parsons GN. Bond strain, chemical induction, and OH incorporation in low-temperature (350-100 °C) plasma deposited silicon dioxide films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1764-1769. DOI: 10.1116/1.591468 |
0.319 |
|
2000 |
Yang CS, Smith LL, Arthur CB, Parsons GN. Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 683-689. DOI: 10.1116/1.591259 |
0.47 |
|
2000 |
Chambers JJ, Parsons GN. Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics Applied Physics Letters. 77: 2385-2387. DOI: 10.1063/1.1316073 |
0.455 |
|
2000 |
Parsons GN. Surface reactions in very low temperature (<150°C) hydrogenated amorphous silicon deposition, and applications to thin film transistors Journal of Non-Crystalline Solids. 266: 23-30. DOI: 10.1016/S0022-3093(99)00713-9 |
0.449 |
|
1999 |
Klein T, Niu D, Parsons G. Effect of Al, Ta, and O Precursors on Growth and Properties of Al2O3 and Ta2O5 Thin Films Deposited by Triode PECVD Mrs Proceedings. 567. DOI: 10.1557/Proc-567-445 |
0.746 |
|
1999 |
Klein TM, Anderson TM, Chowdhury AI, Parsons GN. Hydrogenated silicon nitride thin films deposited between 50 and 250 °C using nitrogen/silane mixtures with helium dilution Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 108-112. DOI: 10.1116/1.582104 |
0.738 |
|
1999 |
Klein TM, Niu D, Epling WS, Li W, Maher DM, Hobbs CC, Hegde RI, Baumvol IJR, Parsons GN. Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100) Applied Physics Letters. 75: 4001-4003. DOI: 10.1063/1.125519 |
0.801 |
|
1998 |
Parsons GN, Yang C, Klein TM, Smith L. Reaction Processes for Low Temperature (<150°C) Plasma Enhanced Deposition of Hydrogenated Amorphous Silicon Thin-Film Transistors on Transparent Plastic Substrates Mrs Proceedings. 508. DOI: 10.1557/Proc-508-19 |
0.739 |
|
1998 |
Smith LL, Arthur CB, Yang CS, Parsons GN. Substrate surface morphology and growth evolution of low temperature silicon nitride on transparent plastics Materials Research Society Symposium - Proceedings. 508: 133-138. DOI: 10.1557/Proc-508-133 |
0.438 |
|
1998 |
Chambers JJ, Min K, Parsons GN. Endpoint uniformity sensing and analysis in silicon dioxide plasma etching using in situ mass spectrometry Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2996-3002. DOI: 10.1116/1.590332 |
0.321 |
|
1998 |
Smith LL, Read WW, Yang CS, Srinivasan E, Courtney CH, Lamb HH, Parsons GN. Plasma enhanced selective area microcrystalline silicon deposition on hydrogenated amorphous silicon: Surface modification for controlled nucleation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1316-1320. DOI: 10.1116/1.581144 |
0.834 |
|
1998 |
Chowdhury AI, Klein TM, Anderson TM, Parsons GN. Silane consumption and conversion analysis in amorphous silicon and silicon nitride plasma deposition using in situ mass spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1852-1856. DOI: 10.1116/1.581117 |
0.709 |
|
1998 |
Yang CS, Read WW, Arthur C, Srinivasan E, Parsons GN. Self-aligned gate and source drain contacts in inverted-staggered a-Si:H thin-film transistors fabricated using selective area silicon PECVD Ieee Electron Device Letters. 19: 180-182. DOI: 10.1109/55.678536 |
0.383 |
|
1998 |
Srinivasan E, Parsons GN. Hydrogen abstraction kinetics and crystallization in low temperature plasma deposition of silicon Applied Physics Letters. 72: 456-458. DOI: 10.1063/1.120785 |
0.824 |
|
1997 |
Yang C, Read WW, Arthur CB, Parsons GN. Comparison of Conventional and Self-Aligned a-Si:H Thin Film Transistors Mrs Proceedings. 471. DOI: 10.1557/Proc-471-179 |
0.451 |
|
1997 |
Srinivasan E, Parsons GN. Real-Time Kinetic Analysis of Hydrogen Abstraction and Etching Reactions Using Pulsed-Gas PECVD of Amorphous and Microcrystalline Silicon Mrs Proceedings. 467. DOI: 10.1557/Proc-467-501 |
0.791 |
|
1997 |
Chowdhury AI, Read WW, Rubloff GW, Tedder LL, Parsons GN. Real-time process sensing and metrology in amorphous and selective area silicon plasma enhanced chemical vapor deposition using in situ mass spectrometry Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 127-132. DOI: 10.1116/1.589237 |
0.387 |
|
1997 |
Srinivasan E, Lloyd DA, Parsons GN. Dominant monohydride bonding in hydrogenated amorphous silicon thin films formed by plasma enhanced chemical vapor deposition at room temperature Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 77-84. DOI: 10.1116/1.580480 |
0.834 |
|
1997 |
Smith LL, Srinivasan E, Parsons GN. Investigation of substrate-dependent nucleation of plasma-deposited microcrystalline silicon on glass and silicon substrates using atomic force microscopy Journal of Applied Physics. 82: 6041-6046. DOI: 10.1063/1.366471 |
0.826 |
|
1997 |
Srinivasan E, Parsons GN. Hydrogen elimination and phase transitions in pulsed-gas plasma deposition of amorphous and microcrystalline silicon Journal of Applied Physics. 81: 2847-2855. DOI: 10.1063/1.364309 |
0.833 |
|
1996 |
Srinivasan E, Bordeaux JS, Parsons GN. Real-Time Monitoring of Hydrogen Elimination Processes in Pulsed-Gas PECVD Using in Situ Mass Spectroscopy Mrs Proceedings. 452. DOI: 10.1557/Proc-452-755 |
0.818 |
|
1996 |
Srinivasan E, Lloyd DA, Fang M, Parsons GN. Inert Gas Dilution and Ion Bombardment Effects in Room Temperature (35°C) Plasma Deposition of a-Si:H Mrs Proceedings. 420. DOI: 10.1557/Proc-420-399 |
0.833 |
|
1996 |
Tedder LL, Rubloff GW, Conaghan BF, Parsons GN. Erratum: Dynamic rate and thickness metrology during poly‐Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry [J. Vac. Sci. Technol. A 14, 267 (1996)] Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 14: 2680-2680. DOI: 10.1116/1.580187 |
0.363 |
|
1996 |
Tedder LL, Rubloff GW, Cohaghan BF, Parsons GN. Dynamic rate and thickness metrology during poly-Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 267-270. DOI: 10.1116/1.579887 |
0.412 |
|
1996 |
Srinivasan E, Yang H, Parsons GN. Ab initio calculation of hydrogen abstraction energetics from silicon hydrides Journal of Chemical Physics. 105: 5467-5471. DOI: 10.1063/1.472387 |
0.79 |
|
1995 |
Tedder LL, Rubloff GW, Shareef I, Anderle M, Kim DH, Parsons GN. Real-time process and product diagnostics in rapid thermal chemical vapor deposition using in situ mass spectrometric sampling Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1924-1927. DOI: 10.1116/1.588110 |
0.447 |
|
1994 |
Souk JH, Parsons GN. Progress in large area selective silicon deposition for TFT/LCD applications Materials Research Society Symposium Proceedings. 336: 19-24. DOI: 10.1557/Proc-336-19 |
0.373 |
|
1993 |
Esser A, Heesel H, Kurz H, Wang C, Parsons GN, Lucovsky G. Transport properties of optically generated free carriers in hydrogenated amorphous silicon in the femtosecond time regime. Physical Review. B, Condensed Matter. 47: 3593-3597. PMID 10006458 DOI: 10.1103/Physrevb.47.3593 |
0.482 |
|
1993 |
Esser A, Heesel H, Kurz H, Wang C, Parsons GN, Lucovsky G. Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a-Si:H Journal of Applied Physics. 73: 1235-1239. DOI: 10.1063/1.353263 |
0.473 |
|
1993 |
Kurz H, Esser A, Heesel H, Lucovsky G, Wang C, Parsons G. Optical detection of photoconductivity in hydrogenated amorphous silicon, a-Si:H, in the Sub-picosecond time domain Journal of Non-Crystalline Solids. 575-578. DOI: 10.1016/0022-3093(93)90617-7 |
0.345 |
|
1992 |
Boland JJ, Parsons GN. Bond selectivity in silicon film growth. Science (New York, N.Y.). 256: 1304-6. PMID 17736760 DOI: 10.1126/Science.256.5061.1304 |
0.43 |
|
1992 |
Parsons GN, Boland JJ, Tsang JC. Microstuctural Evolution and Substrate Selectivity in Pecvd μc-Si Mrs Proceedings. 283. DOI: 10.1557/Proc-283-495 |
0.482 |
|
1992 |
Parsons GN, Boland JJ, Tsang JC. Selective Deposition and Bond Strain Relaxation in Silicon PECVD Using Time Modulated Silane Flow Japanese Journal of Applied Physics. 31: 1943-1947. DOI: 10.1143/Jjap.31.1943 |
0.494 |
|
1992 |
Parsons GN. Enhanced Mobility Top-Gate Amorphous Silicon Thin-Film Transistor with Selectively Deposited Source/Drain Contacts Ieee Electron Device Letters. 13: 80-82. DOI: 10.1109/55.144965 |
0.445 |
|
1991 |
Souk JH, Parsons GN, Batey J. Composition and Properties of PECVD Silicon Nitride Films Deposited from SiH4, N2, He Gases Mrs Proceedings. 219. DOI: 10.1557/Proc-219-787 |
0.44 |
|
1991 |
Parsons GN, Souk JH, Batey J. Low hydrogen content stoichiometric silicon nitride films deposited by plasma-enhanced chemical vapor deposition Journal of Applied Physics. 70: 1553-1560. DOI: 10.1063/1.349544 |
0.474 |
|
1991 |
Parsons GN. Selective deposition of silicon by plasma-enhanced chemical vapor deposition using pulsed silane flow Applied Physics Letters. 59: 2546-2548. DOI: 10.1063/1.105948 |
0.429 |
|
1990 |
Esser A, Seibert K, Kurz H, Parsons GN, Wang C, Davidson BN, Lucovsky G, Nemanich RJ. Ultrafast recombination and trapping in amorphous silicon. Physical Review. B, Condensed Matter. 41: 2879-2884. PMID 9994054 DOI: 10.1016/0022-3093(89)90654-6 |
0.505 |
|
1990 |
Parsons GN, Lucovsky G. Silicon-hydrogen bond-stretching vibrations in hydrogenated amorphous silicon-nitrogen alloys. Physical Review. B, Condensed Matter. 41: 1664-1667. PMID 9993883 DOI: 10.1103/PhysRevB.41.1664 |
0.393 |
|
1990 |
Parsons GN, Wang C, Lucovsky G. Annealing of Irreversible Defects in Hydrogenated and Unhydrogenated Amorphous Silicon Thin Films Mrs Proceedings. 192. DOI: 10.1557/Proc-192-775 |
0.594 |
|
1990 |
Wang C, Parsons GN, Kim SS, Buehler EC, Nemanich RJ, Lucovsky G. ¼c Silicon Thin Films Deposited by Remote Plasma Enhanced Chemical Vapor Deposition Process Mrs Proceedings. 192. DOI: 10.1557/Proc-192-535 |
0.552 |
|
1990 |
Kim SS, Wang C, Parsons GN, Lucovsky G. A-Si:H Thin Film Transistors and Logic Circuits Fabricated in an Integrated Multichamber System Mrs Proceedings. 192. DOI: 10.1557/Proc-192-373 |
0.58 |
|
1990 |
Lucovsky G, Kim SS, Tsu DV, Parsons GN, Fitch JT. Formation of silicon-based heterostructures in multichamber integrated-processing thin-film deposition systems Proceedings of Spie - the International Society For Optical Engineering. 1188: 140-150. DOI: 10.1117/12.963948 |
0.513 |
|
1990 |
Lucovsky G, Kim SS, Tsu DV, Parsons GN, Fitch JT. Formation of silicon‐based heterostructures in multichamber integrated‐processing thin‐film deposition systems Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 8: 1947-1954. DOI: 10.1116/1.576787 |
0.563 |
|
1990 |
Parsons GN, Wang C, Williams MJ, Lucovsky G. Post-deposition relaxation of electronic defects in hydrogenated amorphous silicon Applied Physics Letters. 56: 1895-1897. DOI: 10.1063/1.103056 |
0.602 |
|
1990 |
Parsons GN, Wang C, Lucovsky G. Annealing of "intrinsic" and photo-induced defects in hydrogenated amorphous silicon Thin Solid Films. 193: 577-587. DOI: 10.1016/0040-6090(90)90209-V |
0.595 |
|
1989 |
Parsons GN, Lucovsky G. Nitrogen Incorporation in a-Si,N:H Alloy Films Produced by Remote PECVD Mrs Proceedings. 165. DOI: 10.1557/Proc-165-85 |
0.378 |
|
1989 |
Davidson BN, Parsons GN, Wang C, Lucovsky G. Polyhydride Bonding Groups in PECVD Amorphous Si Thin Films. Mrs Proceedings. 165. DOI: 10.1557/Proc-165-173 |
0.548 |
|
1989 |
Nemanich R, Buehler E, LeGrice Y, Shroder R, Parsons G, Wang C, Lucovsky G, Boyce J. Raman Scattering from Microcrystalline Films: Considerations of Composite Structures with Different Optical Absorption Properties Mrs Proceedings. 164. DOI: 10.1557/PROC-164-265 |
0.473 |
|
1989 |
Wang C, Parsons G, Buehler E, Nemanich R, Lucovsky G. Formation of Microcrystalline Silicon film by RMS Process Mrs Proceedings. 164. DOI: 10.1557/Proc-164-21 |
0.592 |
|
1989 |
Wang C, Parsons GN, Lucovsky G. The Effect of Water Vapor and Oxygen in the Processing Environment on the Properties of Sputtered a-Si:H Films Mrs Proceedings. 149. DOI: 10.1557/Proc-149-75 |
0.442 |
|
1989 |
Parsons GN, Kim SS, Lucovsky G. Substrate Interactions in the Formation of Amorphous Silicon/Dielectric Interfaces Mrs Proceedings. 149. DOI: 10.1557/Proc-149-265 |
0.457 |
|
1989 |
Lucovsky G, Tsu DV, Parsons GN, Kim SS. Multichamber integrated deposition system for silicon based dielectric films Proceedings of Spie - the International Society For Optical Engineering. 1037: 52-72. DOI: 10.1117/12.951015 |
0.525 |
|
1989 |
Parsons GN, Tsu DV, Wang C, Lucovsky G. Precursors for the deposition of amorphous silicon-hydrogen alloys by remote plasma enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 1124-1129. DOI: 10.1116/1.576240 |
0.601 |
|
1989 |
Tsu DV, Parsons GN, Lucovskv G, Watkins MW. Optical emission and mass spectroscopic studies of the gas phase during the deposition of Si02 and aSi:H by remote plasma-enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 1115-1123. DOI: 10.1116/1.576239 |
0.413 |
|
1989 |
Lucovsky G, Parsons GN, Wang C, Davidson BN, Tsu DV. Low-temperature deposition of hydrogenated amorphous silicon (a-Si:H): Control of polyhydride incorporation and its effects on thin film properties Solar Cells. 27: 121-136. DOI: 10.1016/0379-6787(89)90022-7 |
0.606 |
|
1989 |
Nemanich RJ, Buehler EC, Legrice YM, Shroder RE, Parsons GN, Wang C, Lucovsky C, Boyce JB. Raman scattering from microcrystalline Si films: Considerations of composite structures with different optical absorption properties Journal of Non-Crystalline Solids. 114: 813-815. DOI: 10.1016/0022-3093(89)90729-1 |
0.353 |
|
1989 |
Davidson BN, Lucovsky G, Parsons GN, Nemanich RJ, Esser A, Seibert K, Kurz H. Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant Journal of Non-Crystalline Solids. 114: 579-581. DOI: 10.1016/0022-3093(89)90656-X |
0.509 |
|
1989 |
Parsons GN, Tsu DV, Lucovsky G. Defects in a-Si:H films produced by remote plasma enhanced chemical vapor deposition Journal of Non-Crystalline Solids. 107: 295-300. DOI: 10.1016/0022-3093(89)90475-4 |
0.569 |
|
1989 |
Kim SS, Parsons GN, Fountain GG, Lucovsky G. Dependence of a-Sl:H/Si3N4 interface properties on the deposition sequence in amorphous silicon thin film transistor produced by remote PECVD process Journal of Non-Crystalline Solids. 115: 69-71. DOI: 10.1016/0022-3093(89)90363-3 |
0.604 |
|
1989 |
Wang C, Parsons GN, Lucovsky G. Effects of gas additives on the properties of a-Si:H films Journal of Non-Crystalline Solids. 114: 193-195. DOI: 10.1016/0022-3093(89)90110-5 |
0.584 |
|
1989 |
Parsons GN, Wang C, Williams MJ, Lucovsky G. Reduction of defects by high temperature annealing (150°C-240°C) in hydrogenated amorphous silicon films deposited at room temperature Journal of Non-Crystalline Solids. 114: 178-180. DOI: 10.1016/0022-3093(89)90105-1 |
0.582 |
|
1989 |
Lucovsky G, Davidson BN, Parsons GN, Wang C. Incorporation of polyhydride bonding groups into thin films of hydrogenated amrophous silicon (a-;Si:H) Journal of Non-Crystalline Solids. 114: 154-156. DOI: 10.1016/0022-3093(89)90097-5 |
0.599 |
|
1988 |
Parsons G, Tsu D, Lucovsky G. Growth of a-Si:H Films by Remote Plasma Enhanced CVD (RPECVD) Mrs Proceedings. 118. DOI: 10.1557/Proc-118-37 |
0.387 |
|
1988 |
Tsu DV, Parsons GN, Lucovsky G. Spectroscopic emission studies of O2/He and N2/He plasmas in remote plasma enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1849-1854. DOI: 10.1116/1.575267 |
0.536 |
|
1988 |
Parsons GN, Tsu DV, Lucovsky G. Properties of intrinsic and doped a-Si:H deposited by remote plasma enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1912-1916. DOI: 10.1116/1.575244 |
0.607 |
|
1987 |
Tsu DV, Parsons GN, Lucovsky G, Watkins MW. Control of Bonded SiH in Silicon Oxides Deposited by Remote Plasma Enhanced CVD Mrs Proceedings. 105. DOI: 10.1557/Proc-105-73 |
0.434 |
|
1987 |
Parsons GN, Kusano C, Lucovsky G. Photoelectronic properties of a‐Si:H and a‐Ge:H thin films in surface cell structures Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 5: 1655-1660. DOI: 10.1116/1.574541 |
0.519 |
|
1987 |
Cook JW, Parsons GN, Kusano C, Lucovsky G. Bonding defects in amorphous silicon alloys Solar Cells. 21: 387-397. DOI: 10.1016/0379-6787(87)90137-2 |
0.483 |
|
1987 |
Parsons GN, Tsu DV, Lucovsky G. Optical and electrical properties of a-Si:H films grown by remote plasma enhanced chemical vapor deposition (RPECVD) Journal of Non-Crystalline Solids. 97: 1375-1378. DOI: 10.1016/0022-3093(87)90329-2 |
0.587 |
|
1986 |
Burnhara NA, Fisher RF, Asher SE, Kazmerski LL, Lucovsky G, Parsons GN. Core and Valence Levels in Hydrogemated Amorphous Silicon Mrs Proceedings. 77. DOI: 10.1557/PROC-77-691 |
0.435 |
|
1986 |
Parsons G, Kusano C, Lucovsky G. The Effects of Surface and Interface Depletion Regions on the Photoconductivity of a-Si:H in Surface Cell Structures Mrs Proceedings. 77. DOI: 10.1557/Proc-77-589 |
0.447 |
|
1986 |
Parsons GN, Cook JW, Lucovsky G, Lin SY, Mantini MJ. Deposition of a‐Si,Sn:H alloy films by reactive magnetron sputtering from separate Si and Sn targets Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 470-474. DOI: 10.1116/1.573910 |
0.568 |
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1985 |
Rudder RA, Parsons GN, Cook JW, Lucovsky G. Low defect density a-Si, Ge:H alloy films produced by magnetron sputtering from separate Si and Ge cathodes Journal of Non-Crystalline Solids. 77: 885-888. DOI: 10.1016/0022-3093(85)90802-6 |
0.557 |
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Low-probability matches (unlikely to be authored by this person) |
1987 |
Parsons GN, Lucovsky G. Estimation of Defect State Densities from Bulk Photoelectronic Properties of a-Si,Ge:H Alloys Mrs Proceedings. 95. DOI: 10.1557/PROC-95-341 |
0.289 |
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2020 |
Dai Z, Lee DT, Shi K, Wang S, Barton HF, Zhu J, Yan J, Ke Q, Parsons GN. Fabrication of a freestanding metal organic framework predominant hollow fiber mat and its potential applications in gas separation and catalysis Journal of Materials Chemistry A. 8: 3803-3813. DOI: 10.1039/C9Ta11701F |
0.288 |
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2012 |
Aykut Y, Saquing CD, Pourdeyhimi B, Parsons GN, Khan SA. Templating quantum dot to phase-transformed electrospun TiO 2 nanofibers for enhanced photo-excited electron injection Acs Applied Materials and Interfaces. 4: 3837-3845. PMID 22799496 DOI: 10.1021/Am300524A |
0.283 |
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2014 |
Peng Q, Kalanyan B, Hoertz P, Miller A, Kim DH, Hanson K, Alibabaei L, Liu J, Meyer T, Parsons GN, Glass JT. Core-shell photoelectrochemical electrodes for water splitting Nanoscale Science and Engineering Forum 2013 - Core Programming Area At the 2013 Aiche Annual Meeting: Global Challenges For Engineering a Sustainable Future. 261. |
0.28 |
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2014 |
Peng Q, Kalanyan B, Hoertz P, Miller A, Kim DH, Hanson K, Alibabaei L, Liu J, Meyer T, Parsons GN, Glass JT. Core-shell photoelectrochemical electrodes for water splitting Nanoscale Science and Engineering Forum 2013 - Core Programming Area At the 2013 Aiche Annual Meeting: Global Challenges For Engineering a Sustainable Future. 261. |
0.28 |
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2014 |
He F, Trainham J, Parsons G, Newman JS, Li F. A hybrid solar-redox scheme for liquid fuel and hydrogen coproduction Energy and Environmental Science. 7: 2033-2042. DOI: 10.1039/C4Ee00038B |
0.28 |
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2018 |
Tripathi A, Parsons GN, Khan SA, Rojas OJ. Synthesis of organic aerogels with tailorable morphology and strength by controlled solvent swelling following Hansen solubility. Scientific Reports. 8: 2106. PMID 29391454 DOI: 10.1038/S41598-018-19720-4 |
0.274 |
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2021 |
Morgan SE, O'Connell AM, Jansson A, Peterson GW, Mahle JJ, Eldred TB, Gao W, Parsons GN. Stretchable and Multi-Metal-Organic Framework Fabrics Via High-Yield Rapid Sorption-Vapor Synthesis and Their Application in Chemical Warfare Agent Hydrolysis. Acs Applied Materials & Interfaces. PMID 34170678 DOI: 10.1021/acsami.1c07366 |
0.27 |
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2019 |
Lee DT, Jamir JD, Peterson GW, Parsons GN. Functionalized Textiles: Water-Stable Chemical-Protective Textiles via Euhedral Surface-Oriented 2D Cu-TCPP Metal-Organic Frameworks (Small 10/2019) Small. 15: 1970054. DOI: 10.1002/Smll.201970054 |
0.267 |
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2018 |
Cui K, Lemaire P, Zhao H, Savas T, Parsons G, Hart AJ. Tungsten-Carbon Nanotube Composite Photonic Crystals as Thermally Stable Spectral-Selective Absorbers and Emitters for Thermophotovoltaics Advanced Energy Materials. 8: 1801471. DOI: 10.1002/Aenm.201801471 |
0.252 |
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2007 |
Changwoong C, Ayres JA, Stefanescu DM, Walker BR, Gorman CB, Parsons GN. Enhanced conduction through isocyanide terminal groups in alkane and biphenylene molecules measured in molecule/nanoparticle/molecule junctions Journal of Physical Chemistry C. 111: 8080-8085. DOI: 10.1021/Jp065377R |
0.25 |
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2013 |
McClure JP, Devine CK, Jiang R, Chu D, Cuomo JJ, Parsons GN, Fedkiw PS. Oxygen Electroreduction on Ti- and Fe-Containing Carbon Fibers Journal of the Electrochemical Society. 160: F769-F778. DOI: 10.1149/2.029308Jes |
0.249 |
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1987 |
Parsons GN, Kusano C, Lucovsky G. EFFECTS OF BAND BENDING ON THE OPTICAL, ELECTRICAL AND PHOTOELECTRONIC PROPERTIES OF a-Si:H THIN FILMS IN SURFACE CELL STRUCTURES Disord Semicond. |
0.244 |
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1998 |
Min K, Chambers JJ, Parsons GN, Hauser JR. Monitoring of sidewall spacer etch by optical emission spectroscopy and mass spectroscopy Materials Research Society Symposium - Proceedings. 502: 157-162. DOI: 10.1557/Proc-502-157 |
0.243 |
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2020 |
Dai Z, Zhu J, Yan J, Su J, Gao Y, Zhang X, Ke Q, Parsons GN. An Advanced Dual‐Function MnO
2
‐Fabric Air Filter Combining Catalytic Oxidation of Formaldehyde and High‐Efficiency Fine Particulate Matter Removal Advanced Functional Materials. 30: 2001488. DOI: 10.1002/Adfm.202001488 |
0.233 |
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2021 |
Limbu TB, Adhikari B, Song SK, Chitara B, Tang Y, Parsons GN, Yan F. Toward understanding the phase-selective growth mechanism of films and geometrically-shaped flakes of 2D MoTe. Rsc Advances. 11: 38839-38848. PMID 35493247 DOI: 10.1039/d1ra07787b |
0.213 |
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2017 |
Duke KS, Taylor-Just AJ, Ihrie MD, Shipkowski KA, Thompson EA, Dandley EC, Parsons GN, Bonner JC. STAT1-dependent and -independent pulmonary allergic and fibrogenic responses in mice after exposure to tangled versus rod-like multi-walled carbon nanotubes. Particle and Fibre Toxicology. 14: 26. PMID 28716119 DOI: 10.1186/S12989-017-0207-3 |
0.212 |
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2022 |
Morgan SE, Willis ML, Dianat G, Peterson GW, Mahle JJ, Parsons GN. Toxin-Blocking Textiles: Rapid, Benign, Roll-to-Roll Production of Robust MOF-Fabric Composites for Organophosphate Separation and Hydrolysis. Chemsuschem. e202201744. PMID 36288505 DOI: 10.1002/cssc.202201744 |
0.209 |
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1997 |
Srinivasan E, Ellis SJ, Nemanich RJ, Parsons GN. Large crystallite polysilicon deposited using pulsed-gas PECVD at temperatures less than 250°C Materials Research Society Symposium - Proceedings. 452: 989-994. |
0.193 |
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1990 |
Parsons GN, Wang C, Lucovsky G. Annealing of 'intrinsic' and photo-induced defects in hydrogenated amorphous silicon Thin Solid Films. 194: 577-587. |
0.192 |
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2023 |
Keller ND, Vecchi P, Grills DC, Polyansky DE, Bein GP, Dempsey JL, Cahoon JF, Parsons GN, Sampaio RN, Meyer GJ. Multi-Electron Transfer at H-Terminated p-Si Electrolyte Interfaces: Large Photovoltages under Inversion Conditions. Journal of the American Chemical Society. PMID 37161731 DOI: 10.1021/jacs.3c01990 |
0.183 |
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2017 |
Tripathi A, Parsons GN, Rojas OJ, Khan SA. Featherlight, Mechanically Robust Cellulose Ester Aerogels for Environmental Remediation. Acs Omega. 2: 4297-4305. PMID 31457721 DOI: 10.1021/acsomega.7b00571 |
0.136 |
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1998 |
Chambers JJ, Min K, Hauser JR, Parsons GN. Material balance modeling of end-point uniformity in silicon dioxide plasma etching Materials Research Society Symposium - Proceedings. 502: 41-46. |
0.133 |
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2012 |
McClure J, Devine C, Loebl A, Jiang R, Chu D, Cuomo J, Parsons G, Fedkiw PS. Oxygen reduction on TiO2-coated carbon nanofibers decorated with graphene platelets Ecs Transactions. 50: 1791-1800. DOI: 10.1149/05002.1791ecst |
0.123 |
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2024 |
Stone DM, Morgan SE, Abdelmigeed MO, Nguyen J, Bennett TD, Parsons GN, Cowan MG. Control of ZIF-62 and a ZIF-62 Film Thickness within Asymmetric Tubular Supports through Pressure and Dose Time Variation of Atomic Layer Deposition. Small (Weinheim An Der Bergstrasse, Germany). e2307202. PMID 38308381 DOI: 10.1002/smll.202307202 |
0.12 |
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2020 |
Lee DT, Jamir JD, Peterson GW, Parsons GN. Protective Fabrics: Metal-Organic Framework Textiles for Rapid Photocatalytic Sulfur Mustard Simulant Detoxification Matter. 2: 404-415. DOI: 10.1016/j.matt.2019.11.005 |
0.106 |
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2005 |
Ayres J, Walker B, Chandra KL, Stefanescu D, Chu C, Parsons G, Gorman C. Hierarchical assembly for molecular electronics Proceedings of Spie - the International Society For Optical Engineering. 6003. DOI: 10.1117/12.631215 |
0.061 |
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2012 |
Peng S, Parsons G, Dean AG. Resource-focused toolchain for rapid prototyping of embedded systems Journal of Circuits, Systems and Computers. 21. DOI: 10.1142/S0218126612400038 |
0.054 |
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2014 |
Walls HJ, Ensor DS, Parsons GN, Oldham CJ, Zhao J, Peterson GW. Air filtration with nanofibers - Realizing the potential American Filtration and Separations Society Fall Conference 2014 - Next Generation Filter Media Conference: Embracing Future Challenges. |
0.048 |
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2017 |
Thum JS, Parsons G, Whittle T, Astorino TA. High-Intensity Interval Training Elicits Higher Enjoyment than Moderate Intensity Continuous Exercise. Plos One. 12: e0166299. PMID 28076352 DOI: 10.1371/journal.pone.0166299 |
0.028 |
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2006 |
Parsons GN, Siberry GK, Parsons JK, Christensen JR, Joyner ML, Lee SL, Kiefner CM, Hutton N. Multidisciplinary, inpatient directly observed therapy for HIV-1-infected children and adolescents failing HAART: A retrospective study Aids Patient Care and Stds. 20: 275-284. PMID 16623626 DOI: 10.1089/apc.2006.20.275 |
0.021 |
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2010 |
Peng S, Parsons G, Dean AG. RaPTEX: A resource-focused toolchain for rapid prototyping of embedded communication systems Proceedings - Annual Workshop On Interaction Between Compilers and Computer Architectures, Interact. DOI: 10.1145/1739025.1739039 |
0.015 |
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2009 |
Durso SC, Christmas C, Kravet SJ, Parsons G, Wright SM. Implications of academic medicine's failure to recognize clinical excellence. Clinical Medicine & Research. 7: 127-33. PMID 19889945 DOI: 10.3121/cmr.2009.856 |
0.011 |
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2001 |
Parsons GN, Kinsman SB, Bosk CL, Sankar P, Ubel PA. Between two worlds medical student perceptions of humor and slang in the hospital setting. Journal of General Internal Medicine. 16: 544-9. PMID 11556931 DOI: 10.1046/J.1525-1497.2001.016008544.X |
0.01 |
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1998 |
Parsons GN, Kinsman SB, Ubel PA. Encourage qualitative research to improve students' clinical skills! Academic Medicine : Journal of the Association of American Medical Colleges. 73: 933-4. PMID 9759093 |
0.01 |
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Hide low-probability matches. |