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Wei Sun, Ph.D. - Publications

Affiliations: 
2014-2019 Electrical and Computer Engineering Lehigh University, Bethlehem, PA, United States 
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22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Peart MR, Borovac D, Sun W, Song R, Tansu N, Wierer JJ. AlInN/GaN diodes for power electronic devices Applied Physics Express. 13: 91006. DOI: 10.35848/1882-0786/Abb180  0.54
2020 Borovac D, Sun W, Tan C, Tansu N. Electronic properties of dilute-As InGaNAs alloys: A first-principles study Journal of Applied Physics. 127: 015103. DOI: 10.1063/1.5119371  0.728
2020 Borovac D, Sun W, Peart MR, Song R, Wierer JJ, Tansu N. Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy Journal of Crystal Growth. 548: 125847. DOI: 10.1016/J.Jcrysgro.2020.125847  0.674
2020 Borovac D, Sun W, Song R, Wierer JJ, Tansu N. On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE Journal of Crystal Growth. 533: 125469. DOI: 10.1016/J.Jcrysgro.2019.125469  0.649
2020 Sun W, Kim H, Mawst LJ, Tansu N. Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness Journal of Crystal Growth. 531: 125381. DOI: 10.1016/J.Jcrysgro.2019.125381  0.611
2019 Al Muyeed SA, Sun W, Peart MR, Lentz RM, Wei X, Borovac D, Song R, Tansu N, Wierer JJ. Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers Journal of Applied Physics. 126: 213106. DOI: 10.1063/1.5126965  0.684
2019 Fu H, Sun W, Ogidi-Ekoko O, Goodrich JC, Tansu N. Gain characteristics of InGaN quantum wells with AlGaInN barriers Aip Advances. 9: 045013. DOI: 10.1063/1.5086979  0.593
2018 Sun W, Tan CK, Wierer JJ, Tansu N. Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports. 8: 3109. PMID 29449620 DOI: 10.1038/S41598-018-21434-6  0.722
2018 Zeng G, Sun W, Song R, Tansu N, Krick BA. Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports. 8: 2580. PMID 29396471 DOI: 10.1038/S41598-018-19513-9  0.69
2018 Wei X, Al Muyeed SA, Peart MR, Sun W, Tansu N, Wierer JJ. Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching Applied Physics Letters. 113: 121106. DOI: 10.1063/1.5046857  0.564
2018 Sun W, Al Muyeed SA, Song R, Wierer JJ, Tansu N. Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission Applied Physics Letters. 112: 201106. DOI: 10.1063/1.5028257  0.658
2017 Zeng G, Sun W, Song R, Tansu N, Krick BA. Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports. 7: 14126. PMID 29074963 DOI: 10.1038/S41598-017-14234-X  0.727
2017 Sun W, Tan CK, Tansu N. AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics. Scientific Reports. 7: 11826. PMID 28928372 DOI: 10.1038/S41598-017-12125-9  0.761
2017 Sun W, Tan CK, Tansu N. III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures. Scientific Reports. 7: 6671. PMID 28751673 DOI: 10.1038/S41598-017-06889-3  0.746
2017 Al Muyeed SA, Sun W, Wei X, Song R, Koleske DD, Tansu N, Wierer JJ. Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers Aip Advances. 7: 105312. DOI: 10.1063/1.5000519  0.663
2017 Tan C, Sun W, Wierer JJ, Tansu N. Effect of interface roughness on Auger recombination in semiconductor quantum wells Aip Advances. 7: 035212. DOI: 10.1063/1.4978777  0.723
2016 Tan CK, Borovac D, Sun W, Tansu N. First-Principle Electronic Properties of Dilute-P GaN1-xPx Alloy for Visible Light Emitters. Scientific Reports. 6: 24412. PMID 27076266 DOI: 10.1038/Srep24412  0.735
2016 Tan CK, Sun W, Borovac D, Tansu N. Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters. Scientific Reports. 6: 22983. PMID 26961170 DOI: 10.1038/Srep22983  0.745
2016 Tan CK, Borovac D, Sun W, Tansu N. Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter. Scientific Reports. 6: 22215. PMID 26905060 DOI: 10.1038/Srep22215  0.733
2016 Tan CK, Borovac D, Sun W, Tansu N. InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters. Scientific Reports. 6: 19271. PMID 26758552 DOI: 10.1038/Srep19271  0.739
2016 Zhu P, Zhu H, Qin W, Dantas BH, Sun W, Tan CK, Tansu N. Narrow-linewidth red-emission Eu3+-doped TiO2 spheres for light-emitting diodes Journal of Applied Physics. 119. DOI: 10.1063/1.4944944  0.754
2015 Zhu P, Tan CK, Sun W, Tansu N. Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes. Applied Optics. 54: 10299-303. PMID 26836692 DOI: 10.1364/Ao.54.010299  0.738
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