| Year |
Citation |
Score |
| 2022 |
Li Y, Zhang S, Chen F, Wei L, Zhang Z, Xiao H, Gao H, Chen M, Liang S, Pei D, Xu L, Watanabe K, Taniguchi T, Yang L, Miao F, et al. Observation of Coexisting Dirac Bands and Moiré Flat Bands in Magic-Angle Twisted Trilayer Graphene. Advanced Materials (Deerfield Beach, Fla.). e2205996. PMID 36043946 DOI: 10.1002/adma.202205996 |
0.354 |
|
| 2020 |
Kang L, Ye C, Zhao X, Zhou X, Hu J, Li Q, Liu D, Das CM, Yang J, Hu D, Chen J, Cao X, Zhang Y, Xu M, Di J, ... ... Miao F, et al. Phase-controllable growth of ultrathin 2D magnetic FeTe crystals. Nature Communications. 11: 3729. PMID 32709904 DOI: 10.1038/S41467-020-17253-X |
0.328 |
|
| 2020 |
Li L, Shao L, Liu X, Gao A, Wang H, Zheng B, Hou G, Shehzad K, Yu L, Miao F, Shi Y, Xu Y, Wang X. Room-temperature valleytronic transistor. Nature Nanotechnology. PMID 32690885 DOI: 10.1038/S41565-020-0727-0 |
0.394 |
|
| 2020 |
Zhang L, Wang G, Zhang Y, Cao Z, Wang Y, Cao T, Wang C, Cheng B, Zhang W, Wan X, Lin J, Liang SJ, Miao F. Tuning Electrical Conductance in Bilayer MoS2 through Defect-Mediated Interlayer Chemical Bonding. Acs Nano. PMID 32649178 DOI: 10.1021/Acsnano.0C03665 |
0.447 |
|
| 2020 |
Wang C, Pan C, Liang S, Cheng B, Miao F. Reconfigurable vertical field-effect transistor based on graphene/MoTe 2 /graphite heterostructure Science in China Series F: Information Sciences. 63: 1-8. DOI: 10.1007/S11432-019-2778-8 |
0.463 |
|
| 2020 |
Wang C, Wang C, Meng F, Wang P, Wang S, Liang S, Miao F. 2D Layered Materials for Memristive and Neuromorphic Applications Advanced Electronic Materials. 6: 1901107. DOI: 10.1002/Aelm.201901107 |
0.386 |
|
| 2019 |
Gao A, Zhang Z, Li L, Zheng B, Wang C, Wang Y, Cao T, Wang Y, Liang SJ, Miao F, Shi Y, Wang X. Robust Impact-Ionization Field-Effect Transistor Based on Nanoscale Vertical Graphene/Black Phosphorus/Indium Selenide Heterostructures. Acs Nano. PMID 31877250 DOI: 10.1021/Acsnano.9B06140 |
0.453 |
|
| 2019 |
Hao S, Yan S, Wang Y, Xu T, Zhang H, Cong X, Li L, Liu X, Cao T, Gao A, Zhang L, Jia L, Long M, Hu W, Wang X, ... ... Miao F, et al. Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors. Small (Weinheim An Der Bergstrasse, Germany). e1905902. PMID 31867892 DOI: 10.1002/Smll.201905902 |
0.312 |
|
| 2019 |
Liang SJ, Cheng B, Cui X, Miao F. Van der Waals Heterostructures for High-Performance Device Applications: Challenges and Opportunities. Advanced Materials (Deerfield Beach, Fla.). e1903800. PMID 31608514 DOI: 10.1002/Adma.201903800 |
0.409 |
|
| 2019 |
Wang Y, Wang L, Liu X, Wu H, Wang P, Yan D, Cheng B, Shi Y, Watanabe K, Taniguchi T, Liang SJ, Miao F. Direct evidence for charge compensation induced large magnetoresistance in thin WTe2. Nano Letters. PMID 31082263 DOI: 10.1021/Acs.Nanolett.9B01275 |
0.371 |
|
| 2019 |
Li L, Liu W, Gao A, Zhao Y, Lu Q, Yu L, Wang J, Yu L, Shao L, Miao F, Shi Y, Xu Y, Wang X. Plasmon Excited Ultrahot Carriers and Negative Differential Photoresponse in a Vertical Graphene van der Waals Heterostructure. Nano Letters. PMID 31025869 DOI: 10.1021/Acs.Nanolett.9B00908 |
0.51 |
|
| 2019 |
Li B, Wang T, Wang X, Wu X, Wang C, Miao F, Qin M, Wang W, Cao Y. Engineered recombinant proteins for aqueous ultrasonic exfoliation and dispersion of biofunctionalized 2D materials. Chemistry (Weinheim An Der Bergstrasse, Germany). PMID 30779471 DOI: 10.1002/Chem.201900716 |
0.388 |
|
| 2019 |
Gao A, Lai J, Wang Y, Zhu Z, Zeng J, Yu G, Wang N, Chen W, Cao T, Hu W, Sun D, Chen X, Miao F, Shi Y, Wang X. Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures. Nature Nanotechnology. PMID 30664752 DOI: 10.1038/S41565-018-0348-Z |
0.375 |
|
| 2019 |
Yan S, Wang P, Wang C, Xu T, Li Z, Cao T, Chen M, Pan C, Cheng B, Sun L, Liang S, Miao F. Chemical vapor deposition synthesis of two-dimensional freestanding transition metal oxychloride for electronic applications Science in China Series F: Information Sciences. 62: 220407. DOI: 10.1007/S11432-019-2653-9 |
0.381 |
|
| 2019 |
Wang M, Wang C, Wu C, Li Q, Pan C, Wang C, Liang S, Miao F. S‐Type Negative Differential Resistance in Semiconducting Transition‐Metal Dichalcogenides Advanced Electronic Materials. 5: 1800853. DOI: 10.1002/Aelm.201800853 |
0.371 |
|
| 2019 |
Bartolomeo AD, Pelella A, Liu X, Miao F, Passacantando M, Giubileo F, Grillo A, Iemmo L, Urban F, Liang S. Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors Advanced Functional Materials. 29: 1902483-1902483. DOI: 10.1002/Adfm.201902483 |
0.404 |
|
| 2018 |
Wang J, Jia R, Huang Q, Pan C, Zhu J, Wang H, Chen C, Zhang Y, Yang Y, Song H, Miao F, Huang R. Vertical WS/SnS van der Waals Heterostructure for Tunneling Transistors. Scientific Reports. 8: 17755. PMID 30531791 DOI: 10.1038/S41598-018-35661-4 |
0.398 |
|
| 2018 |
Zeng J, He X, Liang SJ, Liu E, Sun Y, Pan C, Wang Y, Cao T, Liu X, Wang C, Zhang L, Yan S, Su G, Wang ZL, Watanabe K, ... ... Miao F, et al. Experimental identification of critical condition for drastically enhancing thermoelectric power factor of two-dimensional layered materials. Nano Letters. PMID 30480455 DOI: 10.1021/Acs.Nanolett.8B03026 |
0.376 |
|
| 2018 |
Yu L, Zhu Z, Gao A, Wang J, Miao F, Shi Y, Wang X. Electrically tunable optical properties of few layers black arsenic phosphorus. Nanotechnology. PMID 30204123 DOI: 10.1088/1361-6528/Aae05F |
0.357 |
|
| 2018 |
Wang Y, Liu E, Gao A, Cao T, Long M, Pan C, Zhang L, Zeng J, Wang C, Hu W, Liang SJ, Miao F. Negative Photoconductance in van der Waals Heterostructures-Based Floating Gate Phototransistor. Acs Nano. PMID 30118592 DOI: 10.1021/Acsnano.8B04885 |
0.354 |
|
| 2018 |
Gao H, Wu W, Hu T, Stroppa A, Wang X, Wang B, Miao F, Ren W. Spin valley and giant quantum spin Hall gap of hydrofluorinated bismuth nanosheet. Scientific Reports. 8: 7436. PMID 29743631 DOI: 10.1038/S41598-018-25478-6 |
0.327 |
|
| 2018 |
Zeng J, Liu E, Fu Y, Chen Z, Pan C, Wang C, Wang M, Wang Y, Xu K, Cai S, Yan X, Wang Y, Liu X, Wang P, Liang SJ, ... ... Miao F, et al. Gate-Induced Interfacial Superconductivity in 1T-SnSe2. Nano Letters. PMID 29385803 DOI: 10.1021/Acs.Nanolett.7B05157 |
0.395 |
|
| 2018 |
Zhang M, Wang H, Mu K, Wang P, Niu W, Zhang S, Xiao G, Chen Y, Tong T, Fu D, Wang X, Zhang H, Song F, Miao F, Sun Z, et al. Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices. Acs Nano. PMID 29294273 DOI: 10.1021/Acsnano.7B08054 |
0.31 |
|
| 2018 |
Zeng J, Liang S, Gao A, Wang Y, Pan C, Wu C, Liu E, Zhang L, Cao T, Liu X, Fu Y, Wang Y, Watanabe K, Taniguchi T, Lu H, ... Miao F, et al. Gate-tunable weak antilocalization in a few-layer InSe Physical Review B. 98. DOI: 10.1103/Physrevb.98.125414 |
0.317 |
|
| 2018 |
Zhang S, Pan X, Li Z, Xie F, Qin Y, Cao L, Wang X, Wang X, Miao F, Song F, Wang B. 2 step of conductance fluctuations due to the broken time-reversal symmetry in bulk-insulating BiSbTeSe2 devices Applied Physics Letters. 112: 243106. DOI: 10.1063/1.5031013 |
0.366 |
|
| 2018 |
Wang M, Cai S, Pan C, Wang C, Lian X, Zhuo Y, Xu K, Cao T, Pan X, Wang B, Liang S, Yang JJ, Wang P, Miao F. Robust memristors based on layered two-dimensional materials Nature Electronics. 1: 130-136. DOI: 10.1038/S41928-018-0021-4 |
0.543 |
|
| 2018 |
Pan C, Fu Y, Wang J, Zeng J, Su G, Long M, Liu E, Wang C, Gao A, Wang M, Wang Y, Wang Z, Liang S, Huang R, Miao F. Vertical Transistors: Analog Circuit Applications Based on Ambipolar Graphene/MoTe2 Vertical Transistors (Adv. Electron. Mater. 3/2018) Advanced Electronic Materials. 4: 1870015. DOI: 10.1002/Aelm.201870015 |
0.487 |
|
| 2018 |
Pan C, Fu Y, Wang J, Zeng J, Su G, Long M, Liu E, Wang C, Gao A, Wang M, Wang Y, Wang Z, Liang S, Huang R, Miao F. Analog Circuit Applications Based on Ambipolar Graphene/MoTe2
Vertical Transistors Advanced Electronic Materials. 4: 1700662. DOI: 10.1002/Aelm.201700662 |
0.507 |
|
| 2018 |
Hao S, Zeng J, Xu T, Cong X, Wang C, Wu C, Wang Y, Liu X, Cao T, Su G, Jia L, Wu Z, Lin Q, Zhang L, Yan S, ... ... Miao F, et al. Low-Temperature Eutectic Synthesis of PtTe2
with Weak Antilocalization and Controlled Layer Thinning Advanced Functional Materials. 28: 1803746. DOI: 10.1002/Adfm.201803746 |
0.348 |
|
| 2018 |
Luo W, Zhu M, Peng G, Zheng X, Miao F, Bai S, Zhang X, Qin S. Carrier Modulation of Ambipolar Few‐Layer MoTe2 Transistors by MgO Surface Charge Transfer Doping Advanced Functional Materials. 28: 1704539. DOI: 10.1002/Adfm.201704539 |
0.419 |
|
| 2017 |
Yang T, Zheng B, Wang Z, Xu T, Pan C, Zou J, Zhang X, Qi Z, Liu H, Feng Y, Hu W, Miao F, Sun L, Duan X, Pan A. Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions. Nature Communications. 8: 1906. PMID 29203864 DOI: 10.1038/S41467-017-02093-Z |
0.377 |
|
| 2017 |
Zhang L, Wang C, Liu XL, Xu T, Long M, Liu E, Pan C, Su G, Zeng J, Fu Y, Wang Y, Yan Z, Gao A, Xu K, Tan PH, ... ... Miao F, et al. Damage-free and rapid transfer of CVD-grown two-dimensional transition metal dichalcogenides by dissolving sacrificial water-soluble layers. Nanoscale. 9: 19124-19130. PMID 29184960 DOI: 10.1039/C7Nr06928F |
0.392 |
|
| 2017 |
Yu Y, Miao F, He J, Ni Z. Photodetecting and light-emitting devices based on two-dimensional materials* Chinese Physics B. 26: 36801. DOI: 10.1088/1674-1056/26/3/036801 |
0.423 |
|
| 2017 |
Fu Y, Long M, Gao A, Wang Y, Pan C, Liu X, Zeng J, Xu K, Zhang L, Liu E, Hu W, Wang X, Miao F. Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping Applied Physics Letters. 111: 43502. DOI: 10.1063/1.4995400 |
0.387 |
|
| 2017 |
Lian X, Wang M, Rao M, Yan P, Yang JJ, Miao F. Characteristics and transport mechanisms of triple switching regimes of TaOx memristor Applied Physics Letters. 110: 173504. DOI: 10.1063/1.4982593 |
0.366 |
|
| 2017 |
Fu Y, Liu E, Yuan H, Tang P, Lian B, Xu G, Zeng J, Chen Z, Wang Y, Zhou W, Xu K, Gao A, Pan C, Wang M, Wang B, ... ... Miao F, et al. Gated tuned superconductivity and phonon softening in monolayer and bilayer MoS 2 Arxiv: Mesoscale and Nanoscale Physics. 2: 52. DOI: 10.1038/S41535-017-0056-1 |
0.44 |
|
| 2017 |
Lian X, Wang M, Yan P, Yang JJ, Miao F. Reset switching statistics of TaO x -based Memristor Journal of Electroceramics. 39: 132-136. DOI: 10.1007/S10832-017-0094-X |
0.31 |
|
| 2017 |
Lanza M, Celano U, Miao F. Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups Journal of Electroceramics. 39: 94-108. DOI: 10.1007/S10832-017-0082-1 |
0.332 |
|
| 2017 |
Luo W, Peng G, Wang F, Miao F, Zhang X, Qin S. Uniform photoresponse in thermally oxidized Ni and MoS2 heterostructures Physica Status Solidi (a). 214: 1700151. DOI: 10.1002/Pssa.201700151 |
0.371 |
|
| 2016 |
Wang Y, Liu E, Liu H, Pan Y, Zhang L, Zeng J, Fu Y, Wang M, Xu K, Huang Z, Wang Z, Lu HZ, Xing D, Wang B, Wan X, ... Miao F, et al. Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2. Nature Communications. 7: 13142. PMID 27725682 DOI: 10.1038/Ncomms13142 |
0.348 |
|
| 2016 |
Yi W, Savel'ev SE, Medeiros-Ribeiro G, Miao F, Zhang MX, Yang JJ, Bratkovsky AM, Williams RS. Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors. Nature Communications. 7: 11142. PMID 27041485 DOI: 10.1038/Ncomms11142 |
0.4 |
|
| 2016 |
Wang C, Cui X, Li Y, Li H, Huang L, Bi J, Luo J, Ma LQ, Zhou W, Cao Y, Wang B, Miao F. A label-free and portable graphene FET aptasensor for children blood lead detection. Scientific Reports. 6: 21711. PMID 26906251 DOI: 10.1038/Srep21711 |
0.361 |
|
| 2016 |
Long M, Liu E, Wang P, Gao A, Xia H, Luo W, Wang B, Zeng J, Fu Y, Xu K, Zhou W, Lv Y, Yao S, Lu MH, Chen YF, ... ... Miao F, et al. Broadband Photovoltaic Detectors based on an Atomically Thin Heterostructure. Nano Letters. PMID 26886761 DOI: 10.1021/Acs.Nanolett.5B04538 |
0.444 |
|
| 2016 |
Wang H, Li Q, Gao Y, Miao F, Zhou XF, Wan XG. Strain effects on borophene: Ideal strength, negative Possion's ratio and phonon instability New Journal of Physics. 18. DOI: 10.1088/1367-2630/18/7/073016 |
0.31 |
|
| 2016 |
Gao A, Liu E, Long M, Zhou W, Wang Y, Xia T, Hu W, Wang B, Miao F. Gate-tunable rectification inversion and photovoltaic detection in graphene/WSe2 heterostructures Applied Physics Letters. 108. DOI: 10.1063/1.4953152 |
0.523 |
|
| 2016 |
Ji Y, Pan C, Zhang M, Long S, Lian X, Miao F, Hui F, Shi Y, Larcher L, Wu E, Lanza M. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown Applied Physics Letters. 108. DOI: 10.1063/1.4939131 |
0.426 |
|
| 2016 |
Luo W, Qin S, Long M, Liu E, Fu Y, Zhou W, Miao F, Zhang S, Zhang R, Zhang XA. Tunable photoresponse with small drain voltage in few-layer graphene–WSe2 heterostructures Physics Letters A. 380: 2575-2579. DOI: 10.1016/J.Physleta.2016.05.060 |
0.331 |
|
| 2016 |
Zhou W, Zeng J, Li X, Xu J, Shi Y, Ren W, Miao F, Wang B, Xing D. Ultraviolet Raman spectra of double-resonant modes of graphene Carbon. 101: 235-238. DOI: 10.1016/J.Carbon.2016.01.102 |
0.425 |
|
| 2016 |
Liu E, Long M, Zeng J, Luo W, Wang Y, Pan Y, Zhou W, Wang B, Hu W, Ni Z, You Y, Zhang X, Qin S, Shi Y, Watanabe K, ... ... Miao F, et al. High Responsivity Phototransistors Based on Few‐Layer ReS2 for Weak Signal Detection Advanced Functional Materials. 26: 1938-1944. DOI: 10.1002/Adfm.201504408 |
0.355 |
|
| 2015 |
Xu K, Wang K, Zhao W, Bao W, Liu E, Ren Y, Wang M, Fu Y, Zeng J, Li Z, Zhou W, Song F, Wang X, Shi Y, Wan X, ... ... Miao F, et al. The positive piezoconductive effect in graphene. Nature Communications. 6: 8119. PMID 26360786 DOI: 10.1038/Ncomms9119 |
0.655 |
|
| 2015 |
Liu E, Fu Y, Wang Y, Feng Y, Liu H, Wan X, Zhou W, Wang B, Shao L, Ho CH, Huang YS, Cao Z, Wang L, Li A, Zeng J, ... ... Miao F, et al. Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors. Nature Communications. 6: 6991. PMID 25947630 DOI: 10.1038/Ncomms7991 |
0.423 |
|
| 2015 |
Feng Y, Zhou J, Du Y, Miao F, Duan CG, Wang B, Wan X. Raman spectra of few-layer phosphorene studied from first-principles calculations. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 185302. PMID 25894239 DOI: 10.1088/0953-8984/27/18/185302 |
0.305 |
|
| 2015 |
Feng Y, Zhou W, Wang Y, Zhou J, Liu E, Fu Y, Ni Z, Wu X, Yuan H, Miao F, Wang B, Wan X, Xing D. Raman vibrational spectra of bulk to monolayer Re S2 with lower symmetry Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.054110 |
0.383 |
|
| 2015 |
Wang M, Lian X, Pan Y, Zeng J, Wang C, Liu E, Wang B, Yang JJ, Miao F, Xing D. A selector device based on graphene–oxide heterostructures for memristor crossbar applications Applied Physics a: Materials Science and Processing. 120: 403-407. DOI: 10.1007/S00339-015-9208-Y |
0.329 |
|
| 2014 |
He D, Zhang Y, Wu Q, Xu R, Nan H, Liu J, Yao J, Wang Z, Yuan S, Li Y, Shi Y, Wang J, Ni Z, He L, Miao F, et al. Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors. Nature Communications. 5: 5162. PMID 25330787 DOI: 10.1038/Ncomms6162 |
0.431 |
|
| 2014 |
Chen T, Chen Q, Schouteden K, Huang W, Wang X, Li Z, Miao F, Wang X, Li Z, Zhao B, Li S, Song F, Wang J, Wang B, Van Haesendonck C, et al. Topological transport and atomic tunnelling-clustering dynamics for aged Cu-doped Bi2Te3 crystals. Nature Communications. 5: 5022. PMID 25247692 DOI: 10.1038/Ncomms6022 |
0.332 |
|
| 2014 |
Nan H, Wang Z, Wang W, Liang Z, Lu Y, Chen Q, He D, Tan P, Miao F, Wang X, Wang J, Ni Z. Strong photoluminescence enhancement of MoS(2) through defect engineering and oxygen bonding. Acs Nano. 8: 5738-45. PMID 24836121 DOI: 10.1021/Nn500532F |
0.31 |
|
| 2014 |
Qian M, Pan Y, Liu F, Wang M, Shen H, He D, Wang B, Shi Y, Miao F, Wang X. Tunable, ultralow-power switching in memristive devices enabled by a heterogeneous graphene-oxide interface. Advanced Materials (Deerfield Beach, Fla.). 26: 3275-81. PMID 24677272 DOI: 10.1002/Adma.201306028 |
0.464 |
|
| 2014 |
Archanjo BS, Fragneaud B, Cançado LG, Winston D, Miao F, Achete CA, Medeiros-Ribeiro G. Graphene nanoribbon superlattices fabricated via He ion lithography Applied Physics Letters. 104: 193114. DOI: 10.1063/1.4878407 |
0.382 |
|
| 2013 |
Qiu H, Xu T, Wang Z, Ren W, Nan H, Ni Z, Chen Q, Yuan S, Miao F, Song F, Long G, Shi Y, Sun L, Wang J, Wang X. Hopping transport through defect-induced localized states in molybdenum disulphide. Nature Communications. 4: 2642. PMID 24149969 DOI: 10.1038/Ncomms3642 |
0.41 |
|
| 2013 |
Choi BJ, Torrezan AC, Norris KJ, Miao F, Strachan JP, Zhang MX, Ohlberg DA, Kobayashi NP, Yang JJ, Williams RS. Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch. Nano Letters. 13: 3213-7. PMID 23746124 DOI: 10.1021/Nl401283Q |
0.388 |
|
| 2013 |
Strachan JP, Torrezan AC, Miao F, Pickett MD, Joshua Yang J, Yi W, Medeiros-Ribeiro G, Stanley Williams R. State dynamics and modeling of tantalum oxide memristors Ieee Transactions On Electron Devices. 60: 2194-2202. DOI: 10.1109/Ted.2013.2264476 |
0.316 |
|
| 2012 |
Bao W, Myhro K, Zhao Z, Chen Z, Jang W, Jing L, Miao F, Zhang H, Dames C, Lau CN. In situ observation of electrostatic and thermal manipulation of suspended graphene membranes. Nano Letters. 12: 5470-4. PMID 23043470 DOI: 10.1021/Nl301836Q |
0.753 |
|
| 2012 |
Miao F, Yi W, Goldfarb I, Yang JJ, Zhang MX, Pickett MD, Strachan JP, Medeiros-Ribeiro G, Williams RS. Continuous electrical tuning of the chemical composition of TaO(x)-based memristors. Acs Nano. 6: 2312-8. PMID 22324891 DOI: 10.1021/Nn2044577 |
0.401 |
|
| 2012 |
Joshua Yang J, Zhang MX, Pickett MD, Miao F, Paul Strachan J, Li WD, Yi W, Ohlberg DAA, Joon Choi B, Wu W, Nickel JH, Medeiros-Ribeiro G, Stanley Williams R. Engineering nonlinearity into memristors for passive crossbar applications Applied Physics Letters. 100. DOI: 10.1063/1.3693392 |
0.315 |
|
| 2012 |
Goldfarb I, Miao F, Yang JJ, Yi W, Strachan JP, Zhang MX, Pickett MD, Medeiros-Ribeiro G, Williams RS. Electronic structure and transport measurements of amorphous transition-metal oxides: Observation of Fermi glass behavior Applied Physics a: Materials Science and Processing. 107: 1-11. DOI: 10.1007/S00339-012-6856-Z |
0.44 |
|
| 2011 |
Miao F, Strachan JP, Yang JJ, Zhang MX, Goldfarb I, Torrezan AC, Eschbach P, Kelley RD, Medeiros-Ribeiro G, Williams RS. Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor. Advanced Materials (Deerfield Beach, Fla.). 23: 5633-40. PMID 22065427 DOI: 10.1002/Adma.201103379 |
0.39 |
|
| 2011 |
Miao F, Joshua Yang J, Borghetti J, Medeiros-Ribeiro G, Stanley Williams R. Observation of two resistance switching modes in TiO2 memristive devices electroformed at low current. Nanotechnology. 22: 254007. PMID 21572203 DOI: 10.1088/0957-4484/22/25/254007 |
0.302 |
|
| 2011 |
Strachan JP, Medeiros-Ribeiro G, Yang JJ, Zhang MX, Miao F, Goldfarb I, Holt M, Rose V, Williams RS. Spectromicroscopy of tantalum oxide memristors Applied Physics Letters. 98. DOI: 10.1063/1.3599589 |
0.417 |
|
| 2011 |
Miao F, Ohlberg DAA, Williams RS, Lau CN. Characterization of quantum conducting channels in metal/molecule/metal devices using pressure-modulated conductance microscopy Applied Physics a: Materials Science and Processing. 102: 943-948. DOI: 10.1007/S00339-011-6298-Z |
0.451 |
|
| 2011 |
Yang JJ, Strachan JP, Miao F, Zhang MX, Pickett MD, Yi W, Ohlberg DAA, Medeiros-Ribeiro G, Williams RS. Metal/TiO2 interfaces for memristive switches Applied Physics a: Materials Science and Processing. 102: 785-789. DOI: 10.1007/S00339-011-6265-8 |
0.427 |
|
| 2010 |
Yang JJ, Miao F, Pickett MD, Ohlberg DAA, Stewart DR, Lau CN, Williams RS. Corrigendum on 'The mechanism of electroforming of metal oxide memristive switches' Nanotechnology. 21: 339803-339803. DOI: 10.1088/0957-4484/21/33/339803 |
0.355 |
|
| 2010 |
Yang JJ, Zhang MX, Strachan JP, Miao F, Pickett MD, Kelley RD, Medeiros-Ribeiro G, Williams RS. High switching endurance in TaOx memristive devices Applied Physics Letters. 97. DOI: 10.1063/1.3524521 |
0.432 |
|
| 2009 |
Bao W, Miao F, Chen Z, Zhang H, Jang W, Dames C, Lau CN. Controlled ripple texturing of suspended graphene and ultrathin graphite membranes. Nature Nanotechnology. 4: 562-6. PMID 19734927 DOI: 10.1038/Nnano.2009.191 |
0.756 |
|
| 2009 |
Joshua Yang J, Miao F, Pickett MD, Ohlberg DA, Stewart DR, Lau CN, Williams RS. The mechanism of electroforming of metal oxide memristive switches. Nanotechnology. 20: 215201. PMID 19423925 DOI: 10.1088/0957-4484/20/21/215201 |
0.652 |
|
| 2009 |
Han W, Wang WH, Pi K, McCreary KM, Bao W, Li Y, Miao F, Lau CN, Kawakami RK. Electron-hole asymmetry of spin injection and transport in single-layer graphene. Physical Review Letters. 102: 137205. PMID 19392401 DOI: 10.1103/Physrevlett.102.137205 |
0.727 |
|
| 2009 |
Deshpande A, Bao W, Miao F, Lau CN, Leroy BJ. Spatially resolved spectroscopy of monolayer graphene on SiO2 Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.205411 |
0.643 |
|
| 2009 |
Miao F, Yang JJ, Strachan JP, Stewart D, Williams RS, Lau CN. Force modulation of tunnel gaps in metal oxide memristive nanoswitches Applied Physics Letters. 95. DOI: 10.1063/1.3227651 |
0.417 |
|
| 2009 |
Calizo I, Ghosh S, Bao W, Miao F, Ning Lau C, Balandin AA. Raman nanometrology of graphene: Temperature and substrate effects Solid State Communications. 149: 1132-1135. DOI: 10.1016/J.Ssc.2009.01.036 |
0.65 |
|
| 2009 |
Miao F, Bao W, Zhang H, Lau CN. Premature switching in graphene Josephson transistors Solid State Communications. 149: 1046-1049. DOI: 10.1016/J.Ssc.2009.01.035 |
0.629 |
|
| 2008 |
Miao F, Ohlberg D, Stewart DR, Williams RS, Lau CN. Quantum conductance oscillations in metal/molecule/metal switches at room temperature. Physical Review Letters. 101: 016802. PMID 18764137 DOI: 10.1103/Physrevlett.101.016802 |
0.659 |
|
| 2008 |
Balandin AA, Ghosh S, Bao W, Calizo I, Teweldebrhan D, Miao F, Lau CN. Superior thermal conductivity of single-layer graphene. Nano Letters. 8: 902-7. PMID 18284217 DOI: 10.1021/Nl0731872 |
0.747 |
|
| 2008 |
Calizo I, Teweldebrhan D, Bao W, Miao F, Lau CN, Balandin AA. Spectroscopic raman nanometrology of graphene and graphene multilayers on arbitrary substrates Journal of Physics: Conference Series. 109: 012008. DOI: 10.1088/1742-6596/109/1/012008 |
0.376 |
|
| 2008 |
Wang WH, Han W, Pi K, McCreary KM, Miao F, Bao W, Lau CN, Kawakami RK. Growth of atomically smooth MgO films on graphene by molecular beam epitaxy Applied Physics Letters. 93. DOI: 10.1063/1.3013820 |
0.596 |
|
| 2008 |
Ghosh S, Calizo I, Teweldebrhan D, Pokatilov EP, Nika DL, Balandin AA, Bao W, Miao F, Lau CN. Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits Applied Physics Letters. 92. DOI: 10.1063/1.2907977 |
0.637 |
|
| 2007 |
Miao F, Wijeratne S, Zhang Y, Coskun UC, Bao W, Lau CN. Phase-coherent transport in graphene quantum billiards. Science (New York, N.Y.). 317: 1530-3. PMID 17872440 DOI: 10.1126/Science.1144359 |
0.751 |
|
| 2007 |
Calizo I, Balandin AA, Bao W, Miao F, Lau CN. Temperature dependence of the Raman spectra of graphene and graphene multilayers. Nano Letters. 7: 2645-9. PMID 17718584 DOI: 10.1021/Nl071033G |
0.733 |
|
| 2007 |
Calizo I, Bao W, Miao F, Lau CN, Balandin AA. The effect of substrates on the Raman spectrum of graphene: Graphene- on-sapphire and graphene-on-glass Applied Physics Letters. 91: 201904. DOI: 10.1063/1.2805024 |
0.643 |
|
| 2007 |
Calizo I, Miao F, Bao W, Lau CN, Balandin AA. Variable temperature Raman microscopy as a nanometrology tool for graphene layers and graphene-based devices Applied Physics Letters. 91: 71913. DOI: 10.1063/1.2771379 |
0.635 |
|
| Show low-probability matches. |