Year |
Citation |
Score |
1998 |
Hiraoka K, Nasu M, Katsuragawa J, Sugiyama T, Ignacio EW, Yamabe S. How is the Fluoride Ion Bound to O2, N2, and CO Molecules? Journal of Physical Chemistry A. 102: 6916-6920. DOI: 10.1021/Jp9812637 |
0.466 |
|
1998 |
Hiraoka K, Katsuragawa J, Minamitsu A, Ignacio EW, Yamabe S. Anomalous Change of Bond Energies in the Cluster Ion N2H+(H2)n Journal of Physical Chemistry A. 102: 1214-1218. DOI: 10.1021/Jp973194M |
0.37 |
|
1998 |
Ignacio EW, Yamabe S. A symmetric structure of the gas-phase H3+(H2)9 cluster Chemical Physics Letters. 287: 563-569. DOI: 10.1016/S0009-2614(98)00237-1 |
0.419 |
|
1996 |
Hiraoka K, Nasu M, Fujimaki S, Ignacio EW, Yamabe S. Gas-Phase Stability and Structure of the Cluster Ions CF3+(CO)n, CF3+(N2)n, CF3+(CF4)n, and CF4H+(CF4)n The Journal of Physical Chemistry. 100: 5245-5251. DOI: 10.1021/Jp9530010 |
0.354 |
|
1995 |
Hiraoka K, Nasu M, Fujimaki S, Ignacio EW, Yamabe S. Weak ion-molecule complexes of Fâ(CF4)n and CF3â(CF4)n Chemical Physics Letters. 245: 14-18. DOI: 10.1016/0009-2614(95)00980-I |
0.47 |
|
1992 |
Ignacio EW, Schlegel HB. An ab initio molecular orbital study of the thermal decomposition of fluorinated mono silanes, SiH4-nFn (n = 0-4) The Journal of Physical Chemistry. 96: 1620-1625. DOI: 10.1021/J100183A025 |
0.544 |
|
1991 |
Ignacio EW, Schlegel HB. On the additivity of basis set effects in some simple fluorine containing systems Journal of Computational Chemistry. 12: 751-760. DOI: 10.1002/Jcc.540120613 |
0.503 |
|
1990 |
Ignacio EW, Schlegel HB. Heats of formation of SiHmFn calculated by ab initio molecular orbital methods The Journal of Chemical Physics. 92: 5404-5416. DOI: 10.1063/1.458518 |
0.475 |
|
1990 |
Ignacio EW, Schlegel HB. An ab initio study of the structures and heats of formation of fluorosilanes cations (SiHmFn+, m + n = 1-4) The Journal of Physical Chemistry. 94: 7439-7445. DOI: 10.1021/J100382A024 |
0.473 |
|
1986 |
Ignacio EW, Schlegel H, Bicerano J. Ab initio calculations on (SiH3)2F+: stability in the gas phase and model for bridging fluorine atom in ion-implanted amorphous silicon Chemical Physics Letters. 127: 367-373. DOI: 10.1016/0009-2614(86)80297-4 |
0.49 |
|
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