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Year Citation  Score
2020 Brunin G, Miranda HPC, Giantomassi M, Royo M, Stengel M, Verstraete MJ, Gonze X, Rignanese GM, Hautier G. Electron-Phonon beyond Fröhlich: Dynamical Quadrupoles in Polar and Covalent Solids. Physical Review Letters. 125: 136601. PMID 33034486 DOI: 10.1103/PhysRevLett.125.136601  0.516
2020 Waroquiers D, George J, Horton M, Schenk S, Persson KA, Rignanese GM, Gonze X, Hautier G. ChemEnv: a fast and robust coordination environment identification tool. Acta Crystallographica Section B, Structural Science, Crystal Engineering and Materials. 76: 683-695. PMID 32831287 DOI: 10.1107/S2052520620007994  0.482
2020 Kumar V, Di Stefano D, Rignanese GM, Gonze X. Li diffusion in Si and LiSi: Nuclear quantum effects and anharmonicity. The Journal of Chemical Physics. 152: 244101. PMID 32610994 DOI: 10.1063/5.0007648  0.549
2020 Romero AH, Allan DC, Amadon B, Antonius G, Applencourt T, Baguet L, Bieder J, Bottin F, Bouchet J, Bousquet E, Bruneval F, Brunin G, Caliste D, Côté M, Denier J, ... ... Rignanese GM, et al. ABINIT: Overview and focus on selected capabilities. The Journal of Chemical Physics. 152: 124102. PMID 32241118 DOI: 10.1063/1.5144261  0.79
2020 Ha V, Karasulu B, Maezono R, Brunin G, Varley JB, Rignanese G, Monserrat B, Hautier G. Boron phosphide as a p -type transparent conductor: Optical absorption and transport through electron-phonon coupling Physical Review Materials. 4: 65401. DOI: 10.1103/Physrevmaterials.4.065401  0.383
2020 Brunin G, Miranda HPC, Giantomassi M, Royo M, Stengel M, Verstraete MJ, Gonze X, Rignanese G, Hautier G. Phonon-limited electron mobility in Si, GaAs, and GaP with exact treatment of dynamical quadrupoles Physical Review B. 102. DOI: 10.1103/PhysRevB.102.094308  0.502
2020 Ricci F, Dunn A, Jain A, Rignanese G, Hautier G. Gapped metals as thermoelectric materials revealed by high-throughput screening. Journal of Materials Chemistry. 8: 17579-17594. DOI: 10.1039/D0Ta05197G  0.339
2020 Dahliah D, Rignanese G, Hautier G. Defect compensation in the p-type transparent oxide Ba2BiTaO6 Journal of Materials Chemistry C. 8: 9352-9357. DOI: 10.1039/C9Tc06919D  0.31
2020 Rangel T, Ben MD, Varsano D, Antonius G, Bruneval F, Jornada FHd, Setten MJv, Orhan OK, O’Regan DD, Canning A, Ferretti A, Marini A, Rignanese G, Deslippe J, Louie SG, et al. Reproducibility in G0W0 calculations for solids Computer Physics Communications. 255: 107242. DOI: 10.1016/J.Cpc.2020.107242  0.332
2020 Gonze X, Amadon B, Antonius G, Arnardi F, Baguet L, Beuken J, Bieder J, Bottin F, Bouchet J, Bousquet E, Brouwer N, Bruneval F, Brunin G, Cavignac T, Charraud J, ... ... Rignanese G, et al. The Abinitproject: Impact, environment and recent developments Computer Physics Communications. 248: 107042. DOI: 10.1016/J.Cpc.2019.107042  0.646
2020 He L, Liu F, Li J, Rignanese G, Zhou A. First-principles investigation of monatomic gold wires under tension Computational Materials Science. 171: 109226. DOI: 10.1016/J.Commatsci.2019.109226  0.338
2019 Naccarato F, Ricci F, Suntivich J, Hautier G, Wirtz L, Rignanese G. Searching for materials with high refractive index and wide band gap: A first-principles high-throughput study Physical Review Materials. 3: 44602. DOI: 10.1103/Physrevmaterials.3.044602  0.388
2019 Ha V, Yu G, Ricci F, Dahliah D, van Setten MJ, Giantomassi M, Rignanese G, Hautier G. Computationally driven high-throughput identification of CaTe and Li3Sb as promising candidates for high-mobility p -type transparent conducting materials Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.034601  0.33
2018 Petretto G, Dwaraknath S, P C Miranda H, Winston D, Giantomassi M, van Setten MJ, Gonze X, Persson KA, Hautier G, Rignanese GM. High-throughput density-functional perturbation theory phonons for inorganic materials. Scientific Data. 5: 180065. PMID 29714723 DOI: 10.1038/Sdata.2018.65  0.792
2018 Lherbier A, Vander Marcken G, Van Troeye B, Botello-Méndez AR, Adjizian J, Hautier G, Gonze X, Rignanese G, Charlier J. Lithiation properties of sp2 carbon allotropes Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.085408  0.49
2018 Chen W, Miceli G, Rignanese G, Pasquarello A. Nonempirical dielectric-dependent hybrid functional with range separation for semiconductors and insulators Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.073803  0.318
2018 Burton LA, Ricci F, Chen W, Rignanese G, Hautier G. High-Throughput Identification of Electrides from All Known Inorganic Materials Chemistry of Materials. 30: 7521-7526. DOI: 10.1021/Acs.Chemmater.8B02526  0.376
2018 Peng W, Petretto G, Rignanese G, Hautier G, Zevalkink A. An Unlikely Route to Low Lattice Thermal Conductivity: Small Atoms in a Simple Layered Structure Joule. 2: 1879-1893. DOI: 10.1016/J.Joule.2018.06.014  0.35
2018 van Setten M, Giantomassi M, Bousquet E, Verstraete M, Hamann D, Gonze X, Rignanese G. The PseudoDojo: Training and grading a 85 element optimized norm-conserving pseudopotential table Computer Physics Communications. 226: 39-54. DOI: 10.1016/J.Cpc.2018.01.012  0.535
2018 Petretto G, Gonze X, Hautier G, Rignanese G. Convergence and pitfalls of density functional perturbation theory phonons calculations from a high-throughput perspective Computational Materials Science. 144: 331-337. DOI: 10.1016/J.Commatsci.2017.12.040  0.65
2018 Dardenne N, Hautier G, Gohy J, Charlier J, Rignanese G. Ab initio calculations of open cell voltage in newly designed PTMA-based Li-ion organic radical batteries Computational Materials Science. 143: 27-31. DOI: 10.1016/J.Commatsci.2017.10.038  0.334
2017 Faghaninia A, Yu G, Aydemir U, Wood M, Chen W, Rignanese GM, Snyder GJ, Hautier G, Jain A. A computational assessment of the electronic, thermoelectric, and defect properties of bournonite (CuPbSbS3) and related substitutions. Physical Chemistry Chemical Physics : Pccp. PMID 28211934 DOI: 10.1039/C7Cp00437K  0.33
2017 van Setten MJ, Giantomassi M, Gonze X, Rignanese G, Hautier G. Automation methodologies and large-scale validation for GW : Towards high-throughput GW calculations Physical Review B. 96. DOI: 10.1103/Physrevb.96.155207  0.593
2017 Pike NA, Van Troeye B, Dewandre A, Petretto G, Gonze X, Rignanese G, Verstraete MJ. Origin of the counterintuitive dynamic charge in the transition metal dichalcogenides Physical Review B. 95. DOI: 10.1103/Physrevb.95.201106  0.551
2017 Rangel T, Ferretti A, Olevano V, Rignanese G. Many-body correlations and coupling in benzene-dithiol junctions Physical Review B. 95: 115137. DOI: 10.1103/Physrevb.95.115137  0.374
2017 Van Troeye B, van Setten MJ, Giantomassi M, Torrent M, Rignanese G, Gonze X. First-principles study of paraelectric and ferroelectricCsH2PO4including dispersion forces: Stability and related vibrational, dielectric, and elastic properties Physical Review B. 95. DOI: 10.1103/Physrevb.95.024112  0.623
2017 Pöhls J, Faghaninia A, Petretto G, Aydemir U, Ricci F, Li G, Wood M, Ohno S, Hautier G, Snyder GJ, Rignanese G, Jain A, White MA. Metal phosphides as potential thermoelectric materials Journal of Materials Chemistry C. 5: 12441-12456. DOI: 10.1039/C7Tc03948D  0.34
2017 Ha V, Ricci F, Rignanese G, Hautier G. Structural design principles for low hole effective mass s-orbital-based p-type oxides Journal of Materials Chemistry C. 5: 5772-5779. DOI: 10.1039/C7Tc00528H  0.314
2017 Dardenne N, Cardia R, Li J, Malloci G, Cappellini G, Blase X, Charlier J, Rignanese G. Tuning Optical Properties of Dibenzochrysenes by Functionalization: A Many-Body Perturbation Theory Study Journal of Physical Chemistry C. 121: 24480-24488. DOI: 10.1021/Acs.Jpcc.7B08601  0.374
2017 Pérez-Osorio MA, Champagne A, Zacharias M, Rignanese G, Giustino F. Van der Waals Interactions and Anharmonicity in the Lattice Vibrations, Dielectric Constants, Effective Charges, and Infrared Spectra of the Organic–Inorganic Halide Perovskite CH3NH3PbI3 Journal of Physical Chemistry C. 121: 18459-18471. DOI: 10.1021/Acs.Jpcc.7B07121  0.395
2017 Maier S, Ohno S, Yu G, Kang SD, Chasapis TC, Ha VA, Miller SA, Berthebaud D, Kanatzidis MG, Rignanese G, Hautier G, Snyder GJ, Gascoin F. Resonant Bonding, Multiband Thermoelectric Transport, and Native Defects in n-Type BaBiTe3–xSex (x = 0, 0.05, and 0.1) Chemistry of Materials. 30: 174-184. DOI: 10.1021/Acs.Chemmater.7B04123  0.312
2017 Waroquiers D, Gonze X, Rignanese G, Welker-Nieuwoudt C, Rosowski F, Göbel M, Schenk S, Degelmann P, André R, Glaum R, Hautier G. Statistical Analysis of Coordination Environments in Oxides Chemistry of Materials. 29: 8346-8360. DOI: 10.1021/Acs.Chemmater.7B02766  0.557
2017 Varley JB, Miglio A, Ha V, Setten MJv, Rignanese G, Hautier G. High-Throughput Design of Non-oxide p-Type Transparent Conducting Materials: Data Mining, Search Strategy, and Identification of Boron Phosphide Chemistry of Materials. 29: 2568-2573. DOI: 10.1021/Acs.Chemmater.6B04663  0.368
2017 Pan Y, Dai X, de Gironcoli S, Gong X, Rignanese G, Zhou A. A parallel orbital-updating based plane-wave basis method for electronic structure calculations Journal of Computational Physics. 348: 482-492. DOI: 10.1016/J.Jcp.2017.07.033  0.322
2016 Lejaeghere K, Bihlmayer G, Björkman T, Blaha P, Blügel S, Blum V, Caliste D, Castelli IE, Clark SJ, Dal Corso A, de Gironcoli S, Deutsch T, Dewhurst JK, Di Marco I, Draxl C, ... ... Rignanese GM, et al. Reproducibility in density functional theory calculations of solids. Science (New York, N.Y.). 351: aad3000. PMID 27013736 DOI: 10.1126/Science.Aad3000  0.769
2016 Ramkumar SP, Gillet Y, Miglio A, van Setten MJ, Gonze X, Rignanese G. First-principles investigation of the structural, dynamical, and dielectric properties of kesterite, stannite, and PMCA phases of Cu2ZnSnS4 Physical Review B. 94. DOI: 10.1103/Physrevb.94.224302  0.572
2016 Ha VA, Waroquiers D, Rignanese GM, Hautier G. Influence of the "second gap" on the transparency of transparent conducting oxides: An ab initio study Applied Physics Letters. 108. DOI: 10.1063/1.4950803  0.359
2016 Tang R, Nie Y, Kawasaki JK, Kuo DY, Petretto G, Hautier G, Rignanese GM, Shen KM, Schlom DG, Suntivich J. Oxygen evolution reaction electrocatalysis on SrIrO3 grown using molecular beam epitaxy Journal of Materials Chemistry A. 4: 6831-6836. DOI: 10.1039/C5Ta09530A  0.34
2016 Bhatia A, Hautier G, Nilgianskul T, Miglio A, Sun J, Kim HJ, Kim KH, Chen S, Rignanese GM, Gonze X, Suntivich J. High-Mobility Bismuth-based Transparent p-Type Oxide from High-Throughput Material Screening Chemistry of Materials. 28: 30-34. DOI: 10.1021/Acs.Chemmater.5B03794  0.6
2016 Gonze X, Jollet F, Abreu Araujo F, Adams D, Amadon B, Applencourt T, Audouze C, Beuken JM, Bieder J, Bokhanchuk A, Bousquet E, Bruneval F, Caliste D, Côté M, Dahm F, ... ... Rignanese GM, et al. Recent developments in the ABINIT software package Computer Physics Communications. DOI: 10.1016/J.Cpc.2016.04.003  0.588
2015 Rangel T, Rignanese GM, Olevano V. Can molecular projected density of states (PDOS) be systematically used in electronic conductance analysis? Beilstein Journal of Nanotechnology. 6: 1247-59. PMID 26171300 DOI: 10.3762/Bjnano.6.128  0.348
2015 Bilc DI, Hautier G, Waroquiers D, Rignanese GM, Ghosez P. Low-dimensional transport and large thermoelectric power factors in bulk semiconductors by band engineering of highly directional electronic states. Physical Review Letters. 114: 136601. PMID 25884131 DOI: 10.1103/Physrevlett.114.136601  0.375
2015 Dardenne N, Blase X, Hautier G, Charlier JC, Rignanese GM. Ab Initio Calculations of Open-Cell Voltage in Li-Ion Organic Radical Batteries Journal of Physical Chemistry C. 119: 23373-23378. DOI: 10.1021/Acs.Jpcc.5B07886  0.367
2015 Jain A, Ong SP, Chen W, Medasani B, Qu X, Kocher M, Brafman M, Petretto G, Rignanese GM, Hautier G, Gunter D, Persson KA. FireWorks: A dynamic workflow system designed for high-throughput applications Concurrency Computation. DOI: 10.1002/Cpe.3505  0.319
2014 He L, Liu F, Hautier G, Oliveira MJT, Marques MAL, Vila FD, Rehr JJ, Rignanese GM, Zhou A. Accuracy of generalized gradient approximation functionals for density-functional perturbation theory calculations Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.064305  0.466
2014 Shaltaf R, Juwhari HK, Hamad B, Khalifeh J, Rignanese G, Gonze X. Structural, electronic, vibrational, and dielectric properties of LaBGeO5 from first principles Journal of Applied Physics. 115: 074103. DOI: 10.1063/1.4866357  0.635
2014 Hautier G, Miglio A, Waroquiers D, Rignanese G, Gonze X. How Does Chemistry Influence Electron Effective Mass in Oxides? A High-Throughput Computational Analysis Chemistry of Materials. 26: 5447-5458. DOI: 10.1021/Cm404079A  0.568
2014 Miglio A, Saniz R, Waroquiers D, Stankovski M, Giantomassi M, Hautier G, Rignanese G, Gonze X. Computed electronic and optical properties of SnO2 under compressive stress Optical Materials. 38: 161-166. DOI: 10.1016/J.Optmat.2014.10.017  0.591
2013 Hautier G, Miglio A, Ceder G, Rignanese GM, Gonze X. Identification and design principles of low hole effective mass p-type transparent conducting oxides. Nature Communications. 4: 2292. PMID 23939205 DOI: 10.1038/Ncomms3292  0.557
2013 Da Pieve F, Di Matteo S, Rangel T, Giantomassi M, Lamoen D, Rignanese GM, Gonze X. Origin of magnetism and quasiparticles properties in Cr-doped TiO2. Physical Review Letters. 110: 136402. PMID 23581348 DOI: 10.1103/Physrevlett.110.136402  0.514
2013 Espejo C, Rangel T, Romero AH, Gonze X, Rignanese G. Band structure tunability in MoS2under interlayer compression: A DFT andGWstudy Physical Review B. 87. DOI: 10.1103/Physrevb.87.245114  0.611
2013 Waroquiers D, Lherbier A, Miglio A, Stankovski M, Poncé S, Oliveira MJT, Giantomassi M, Rignanese G, Gonze X. Band widths and gaps from the Tran-Blaha functional: Comparison with many-body perturbation theory Physical Review B. 87. DOI: 10.1103/Physrevb.87.075121  0.614
2013 Bautista-Hernández A, Rangel T, Romero AH, Rignanese G, Salazar-Villanueva M, Chigo-Anota E. Structural and vibrational stability ofMandZphases of silicon and germanium from first principles Journal of Applied Physics. 113: 193504. DOI: 10.1063/1.4804668  0.464
2013 Hautier G, Miglio A, Ceder G, Rignanese GM, Gonze X. Identification and design principles of low hole effective mass p-type transparent conducting oxides Nature Communications. 4. DOI: 10.1038/ncomms3292  0.471
2012 Miglio A, Waroquiers D, Antonius G, Giantomassi M, Stankovski M, Côté M, Gonze X, Rignanese G-. Effects of plasmon pole models on the G0W0 electronic structure of various oxides The European Physical Journal B. 85. DOI: 10.1140/Epjb/E2012-30121-4  0.641
2012 Rangel T, Kecik D, Trevisanutto PE, Rignanese G, Swygenhoven HV, Olevano V. Band structure of gold from many-body perturbation theory Physical Review B. 86: 125125. DOI: 10.1103/Physrevb.86.125125  0.385
2012 Caddeo C, Malloci G, Rignanese G, Colombo L, Mattoni A. Electronic Properties of Hybrid Zinc Oxide–Oligothiophene Nanostructures Journal of Physical Chemistry C. 116: 8174-8180. DOI: 10.1021/Jp212283Z  0.357
2011 Stankovski M, Antonius G, Waroquiers D, Miglio A, Dixit H, Sankaran K, Giantomassi M, Gonze X, Côté M, Rignanese GM. G0W0 band gap of ZnO: Effects of plasmon-pole models Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.241201  0.584
2011 Rangel T, Ferretti A, Trevisanutto PE, Olevano V, Rignanese G. Transport properties of molecular junctions from many-body perturbation theory Physical Review B. 84: 45426. DOI: 10.1103/Physrevb.84.045426  0.421
2011 Peelaers H, Partoens B, Giantomassi M, Rangel T, Goossens E, Rignanese G, Gonze X, Peeters FM. Convergence of quasiparticle band structures of Si and Ge nanowires in theGWapproximation and the validity of scissor shifts Physical Review B. 83. DOI: 10.1103/Physrevb.83.045306  0.618
2011 Giantomassi M, Stankovski M, Shaltaf R, Grüning M, Bruneval F, Rinke P, Rignanese G. Electronic properties of interfaces and defects from many-body perturbation theory: Recent developments and applications Physica Status Solidi (B). 248: 275-289. DOI: 10.1002/Pssb.201046094  0.427
2010 Grüning M, Shaltaf R, Rignanese G. Quasiparticle calculations of the electronic properties of ZrO2 and HfO2 polymorphs and their interface with Si Physical Review B. 81: 35330. DOI: 10.1103/Physrevb.81.035330  0.479
2010 Sankaran K, Pourtois G, Degraeve R, Zahid MB, Rignanese GM, Van Houdt J. First-principles modeling of intrinsic and extrinsic defects in γ -Al2 O3 Applied Physics Letters. 97. DOI: 10.1063/1.3507385  0.376
2009 Shaltaf R, Rangel T, Grüning M, Gonze X, Rignanese G, Hamann DR. Electronic properties of zircon and hafnon from many-body perturbation theory Physical Review B. 79. DOI: 10.1103/Physrevb.79.195101  0.636
2009 Gonze X, Amadon B, Anglade PM, Beuken JM, Bottin F, Boulanger P, Bruneval F, Caliste D, Caracas R, Côté M, Deutsch T, Genovese L, Ghosez P, Giantomassi M, Goedecker S, ... ... Rignanese GM, et al. ABINIT: First-principles approach to material and nanosystem properties Computer Physics Communications. 180: 2582-2615. DOI: 10.1016/J.Cpc.2009.07.007  0.641
2008 Shaltaf R, Rignanese GM, Gonze X, Giustino F, Pasquarello A. Band offsets at the Si/SiO2 interface from many-body perturbation theory. Physical Review Letters. 100: 186401. PMID 18518396 DOI: 10.1103/Physrevlett.100.186401  0.617
2008 Rignanese GM, Charlier JC. Hypothetical three-dimensional all- sp2 carbon phase Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.125415  0.348
2008 Bilc DI, Orlando R, Shaltaf R, Rignanese G, Iniguez J, Ghosez P. Hybrid exchange-correlation functional for accurate prediction of the electronic and structural properties of ferroelectric oxides Physical Review B. 77: 165107. DOI: 10.1103/Physrevb.77.165107  0.448
2007 Morari C, Rignanese G, Melinte S. Electronic properties of 1-4, dicyanobenzene and 1-4, phenylene diisocyanide molecules contacted between Pt and Pd electrodes: First-principles study Physical Review B. 76. DOI: 10.1103/Physrevb.76.115428  0.312
2006 Dubois SMM, Rignanese GM, Pardoen T, Charlier JC. Ideal strength of silicon: An ab initio study Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.235203  0.395
2005 Connétable D, Rignanese GM, Charlier JC, Blase X. Room temperature peierls distortion in small diameter nanotubes. Physical Review Letters. 94: 015503. PMID 15698095 DOI: 10.1103/Physrevlett.94.015503  0.316
2005 Gonze X, Rignanese GM, Verstraete M, Beuken JM, Pouillon Y, Caracas R, Jollet F, Torrent M, Zerah G, Mikami M, Ghosez P, Veithen M, Raty JY, Olevano V, Bruneval F, et al. A brief introduction to the ABINIT software package Zeitschrift Fur Kristallographie. 220: 558-562. DOI: 10.1524/Zkri.220.5.558.65066  0.57
2005 Gonze X, Rignanese G, Caracas R. First-principle studies of the lattice dynamics of crystals, and related properties Zeitschrift FüR Kristallographie - Crystalline Materials. 220. DOI: 10.1524/Zkri.220.5.458.65077  0.63
2005 Rignanese G. Dielectric properties of crystalline and amorphous transition metal oxides and silicates as potential high-κ candidates: the contribution of density-functional theory Journal of Physics: Condensed Matter. 17. DOI: 10.1088/0953-8984/17/7/R03  0.405
2005 Rignanese G, Pasquarello A. Modelling of dielectric constants of amorphous Zr silicates Journal of Physics: Condensed Matter. 17. DOI: 10.1088/0953-8984/17/21/005  0.314
2005 Rignanese G, Rocquefelte X, Gonze X, Pasquarello A. Erratum: Titanium oxides and silicates as high-? dielectrics: A first-principles investigation by G.-M. Rignanese, X. Rocquefelte, X. Gonze, Alfredo Pasquarello International Journal of Quantum Chemistry. 103: 354-354. DOI: 10.1002/Qua.20643  0.456
2005 Rignanese G, Rocquefelte X, Gonze X, Pasquarello A. Titanium oxides and silicates as high-κ dielectrics: A first-principles investigation International Journal of Quantum Chemistry. 101: 793-801. DOI: 10.1002/Qua.20339  0.609
2004 Rignanese G, Gonze X, Pasquarello A. Erratum: First-principles study of structural, electronic, dynamical, and dielectric properties of zircon [Phys. Rev. B63, 104305 (2001)] Physical Review B. 70. DOI: 10.1103/Physrevb.70.099904  0.523
2004 Rignanese G, Gonze X, Jun G, Cho K, Pasquarello A. Erratum: First-principles investigation of high-κdielectrics: Comparison between the silicates and oxides of hafnium and zirconium [Phys. Rev. B69, 184301 (2004)] Physical Review B. 70. DOI: 10.1103/Physrevb.70.099903  0.474
2004 Rignanese G, Gonze X, Jun G, Cho K, Pasquarello A. First-principles investigation of high-κdielectrics: Comparison between the silicates and oxides of hafnium and zirconium Physical Review B. 69. DOI: 10.1103/Physrevb.69.184301  0.579
2004 Rignanese G, Charlier J, Gonze X. First-principles molecular-dynamics investigation of the hydration mechanisms of the (0001) α-quartz surface Phys. Chem. Chem. Phys.. 6: 1920-1925. DOI: 10.1039/B311842H  0.507
2004 Rocquefelte X, Rignanese GM, Meunier V, Terrones H, Terrenes M, Charlier JC. How to identify haeckelite structures: A theoretical study of their electronic and vibrational properties Nano Letters. 4: 805-810. DOI: 10.1021/Nl049879X  0.407
2003 Connétable D, Timoshevskii V, Masenelli B, Beille J, Marcus J, Barbara B, Saitta AM, Rignanese GM, Mélinon P, Yamanaka S, Blase X. Superconductivity in doped sp3 semiconductors: the case of the clathrates. Physical Review Letters. 91: 247001. PMID 14683147 DOI: 10.1103/Physrevlett.91.247001  0.438
2002 Rignanese GM, Detraux F, Gonze X, Bongiorno A, Pasquarello A. Dielectric constants of Zr silicates: a first-principles study. Physical Review Letters. 89: 117601. PMID 12225168 DOI: 10.1103/Physrevlett.89.117601  0.576
2002 Rignanese G, Charlier J, Gonze X. First-principles study of vibrational and dielectric properties ofC3N4polymorphs Physical Review B. 66. DOI: 10.1103/Physrevb.66.205416  0.593
2002 Li J, Rignanese G, Chang EK, Blase X, Louie SG. GWstudy of the metal-insulator transition of bcc hydrogen Physical Review B. 66. DOI: 10.1103/Physrevb.66.035102  0.302
2002 Gonze X, Beuken J, Caracas R, Detraux F, Fuchs M, Rignanese G, Sindic L, Verstraete M, Zerah G, Jollet F, Torrent M, Roy A, Mikami M, Ghosez P, Raty J, et al. First-principles computation of material properties: the ABINIT software project Computational Materials Science. 25: 478-492. DOI: 10.1016/S0927-0256(02)00325-7  0.571
2001 Charlier JC, Rignanese GM. Electronic structure of carbon nanocones. Physical Review Letters. 86: 5970-3. PMID 11415406 DOI: 10.1103/Physrevlett.86.5970  0.339
2001 Rignanese GM, Blase X, Louie SG. Quasiparticle effects on tunneling currents: a study of C2H4 adsorbed on the Si(001)- (2 x 1) surface. Physical Review Letters. 86: 2110-3. PMID 11289867 DOI: 10.1103/Physrevlett.86.2110  0.359
2001 Rignanese G, Detraux F, Gonze X, Pasquarello A. First-principles study of dynamical and dielectric properties of tetragonal zirconia Physical Review B. 64. DOI: 10.1103/Physrevb.64.134301  0.626
2001 Rignanese G, Gonze X, Pasquarello A. First-principles study of structural, electronic, dynamical, and dielectric properties of zircon Physical Review B. 63. DOI: 10.1103/Physrevb.63.104305  0.652
2001 Rignanese G, Pasquarello A. Nitrogen bonding configurations at nitrided Si(001) surfaces and Si(001)-SiO2 interfaces: A first-principles study of core-level shifts Physical Review B. 63: 75307. DOI: 10.1103/Physrevb.63.075307  0.316
2000 Rignanese GM, De Vita A, Charlier JC, Gonze X, Car R. First-principles molecular-dynamics study of the (0001) α-quartz surface Physical Review B - Condensed Matter and Materials Physics. 61: 13250-13255.  0.43
1998 Travaly Y, Bertrand P, Rignanese G, Gonze X. Theoretical Modeling of the Nucleation and Growth of Aluminium Films Thermally Evaporated onto Poly(ethylene terephthalate) Substrate The Journal of Adhesion. 66: 339-355. DOI: 10.1080/00218469808009973  0.552
1997 Rignanese GM, Pasquarello A, Charlier JC, Gonze X, Car R. Nitrogen incorporation at Si(001)-SiO2 interfaces: Relation between N 1s core-level shifts and microscopic structure Physical Review Letters. 79: 5174-5177. DOI: 10.1103/Physrevlett.79.5174  0.558
1996 Rignanese G, Michenaud J, Gonze X. Ab initio study of the volume dependence of dynamical and thermodynamical properties of silicon Physical Review B. 53: 4488-4497. PMID 9984004 DOI: 10.1103/Physrevb.53.4488  0.553
1995 Rignanese G, Ghosez P, Charlier J, Michenaud J, Gonze X. Scaling hypothesis for corrections to total energy and stress in plane-wave-based ab initio calculations. Physical Review. B, Condensed Matter. 52: 8160-8178. PMID 9979814 DOI: 10.1103/Physrevb.52.8160  0.562
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