Thomas Kämpfe, Ph.D - Publications

Affiliations: 
2012-2017 Physics Technische Universität Dresden, Dresden, Sachsen, Germany 

29 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Lederer M, Abdulazhanov S, Olivo R, Lehninger D, Kämpfe T, Seidel K, Eng LM. Electric field-induced crystallization of ferroelectric hafnium zirconium oxide. Scientific Reports. 11: 22266. PMID 34782687 DOI: 10.1038/s41598-021-01724-2  0.517
2021 Ali T, Mertens K, Kuehnel K, Rudolph M, Oehler S, Lehninger D, Müller F, Revello R, Hoffmann R, Zimmermann K, Kämpfe T, Czernohorsky M, Seidel K, Van Houdt J, Eng L. A FeFET with a Novel MFMFIS Gate Stack: Towards Energy-Efficient and Ultrafast NVMs for Neuromorphic Computing. Nanotechnology. PMID 34261048 DOI: 10.1088/1361-6528/ac146c  0.499
2020 Lederer M, Kämpfe T, Vogel N, Utess D, Volkmann B, Ali T, Olivo R, Müller J, Beyer S, Trentzsch M, Seidel K, Eng ALM. Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction. Nanomaterials (Basel, Switzerland). 10. PMID 32098415 DOI: 10.3390/Nano10020384  0.406
2020 Ali T, Kuhnel K, Czernohorsky M, Mart C, Rudolph M, Patzold B, Lederer M, Olivo R, Lehninger D, Muller F, Hoffmann R, Metzger J, Binder R, Steinke P, Kampfe T, et al. A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO 2 Memory FeFET: A Temperature-Modulated Operation Ieee Transactions On Electron Devices. 67: 2793-2799. DOI: 10.1109/Ted.2020.2996582  0.532
2020 Ali T, Kuhnel K, Czernohorsky M, Mart C, Rudolph M, Patzold B, Lehninger D, Olivo R, Lederer M, Muller F, Hoffmann R, Metzger J, Binder R, Steinke P, Kampfe T, et al. A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO 2 Memory FeFET: Pyroelectricity and Reliability Ieee Transactions On Electron Devices. 67: 2981-2987. DOI: 10.1109/Ted.2020.2995781  0.547
2020 Mart C, Kämpfe T, Czernohorsky M, Eßlinger S, Kolodinski S, Wiatr M, Weinreich W, Eng LM. The electrocaloric effect in doped hafnium oxide: Comparison of direct and indirect measurements Applied Physics Letters. 117: 42903. DOI: 10.1063/5.0012746  0.54
2020 Lehninger D, Olivo R, Ali T, Lederer M, Kämpfe T, Mart C, Biedermann K, Kühnel K, Roy L, Kalkani M, Seidel K. Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation Physica Status Solidi (a). 217: 1900840. DOI: 10.1002/Pssa.201900840  0.301
2020 Mart C, Kämpfe T, Hoffmann R, Eßlinger S, Kirbach S, Kühnel K, Czernohorsky M, Eng LM, Weinreich W. Piezoelectric Response of Polycrystalline Silicon‐Doped Hafnium Oxide Thin Films Determined by Rapid Temperature Cycles Advanced Electronic Materials. 6: 1901015. DOI: 10.1002/Aelm.201901015  0.526
2019 Ali T, Polakowski P, Buttner T, Kampfe T, Rudolph M, Patzold B, Hoffmann R, Czernohorsky M, Kuhnel K, Steinke P, Zimmermann K, Biedermann K, Eng LM, Seidel K, Muller J. Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory Ieee Transactions On Electron Devices. 66: 3356-3364. DOI: 10.1109/Ted.2019.2921618  0.521
2019 Lederer M, Kämpfe T, Olivo R, Lehninger D, Mart C, Kirbach S, Ali T, Polakowski P, Roy L, Seidel K. Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD Applied Physics Letters. 115: 222902. DOI: 10.1063/1.5129318  0.375
2019 Mart C, Kühnel K, Kämpfe T, Zybell S, Weinreich W. Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films Applied Physics Letters. 114: 102903. DOI: 10.1063/1.5089821  0.41
2019 Lv H, Fidalgo J, Leitão DC, Silva AV, Kämpfe T, Riedel S, Langer J, Wrona J, Ocker B, Freitas PP, Cardoso S. The annealing effect on memory state stability and interlayer coupling in perpendicular magnetic tunnel junctions with ultrathin MgO barrier Journal of Magnetism and Magnetic Materials. 477: 142-146. DOI: 10.1016/J.Jmmm.2019.01.050  0.305
2019 Hanrahan B, Mart C, Kämpfe T, Czernohorsky M, Weinreich W, Smith A. Pyroelectric Energy Conversion in Doped Hafnium Oxide (HfO2) Thin Films on Area‐Enhanced Substrates Energy Technology. 7: 1900515. DOI: 10.1002/Ente.201900515  0.331
2018 Ali T, Polakowski P, Riedel S, Buttner T, Kampfe T, Rudolph M, Patzold B, Seidel K, Lohr D, Hoffmann R, Czernohorsky M, Kuhnel K, Steinke P, Calvo J, Zimmermann K, et al. High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty Ieee Transactions On Electron Devices. 65: 3769-3774. DOI: 10.1109/Ted.2018.2856818  0.336
2018 Mart C, Czernohorsky M, Zybell S, Kämpfe T, Weinreich W. Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO2) thin films Applied Physics Letters. 113: 122901. DOI: 10.1063/1.5046844  0.343
2018 Ali T, Polakowski P, Riedel S, Büttner T, Kämpfe T, Rudolph M, Pätzold B, Seidel K, Löhr D, Hoffmann R, Czernohorsky M, Kühnel K, Thrun X, Hanisch N, Steinke P, et al. Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics Applied Physics Letters. 112: 222903. DOI: 10.1063/1.5029324  0.366
2018 Mart C, Kämpfe T, Zybell S, Weinreich W. Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO2 Applied Physics Letters. 112: 52905. DOI: 10.1063/1.5019308  0.365
2017 Pawlik A-, Kämpfe T, Haußmann A, Woike T, Treske U, Knupfer M, Büchner B, Soergel E, Streubel R, Koitzsch A, Eng LM. Polarization driven conductance variations at charged ferroelectric domain walls. Nanoscale. 9: 10933-10939. PMID 28731095 DOI: 10.1039/C7Nr00217C  0.565
2017 Godau C, Kämpfe T, Thiessen A, Eng LM, Haußmann A. Enhancing the Domain Wall Conductivity in Lithium Niobate Single Crystals. Acs Nano. 11: 4816-4824. PMID 28448123 DOI: 10.1021/Acsnano.7B01199  0.575
2017 Haußmann A, Gemeinhardt A, Schröder M, Kämpfe T, Eng LM. Bottom-Up Assembly of Molecular Nanostructures by Means of Ferroelectric Lithography. Langmuir : the Acs Journal of Surfaces and Colloids. 33: 475-484. PMID 27989215 DOI: 10.1021/Acs.Langmuir.6B03405  0.556
2017 Johnston SR, Yang Y, Cui Y, Ma EY, Kämpfe T, Eng LM, Zhou J, Chen Y, Lu M, Shen Z. Measurement of surface acoustic wave resonances in ferroelectric domains by microwave microscopy Journal of Applied Physics. 122: 074101. DOI: 10.1063/1.4997474  0.499
2017 Wehmeier L, Kämpfe T, Haußmann A, Eng LM. In Situ 3D Observation of the Domain Wall Dynamics in a Triglycine Sulfate Single Crystal upon Ferroelectric Phase Transition Physica Status Solidi-Rapid Research Letters. 11: 1700267. DOI: 10.1002/Pssr.201700267  0.558
2016 Kämpfe T, Haußmann A, Eng LM, Reichenbach P, Thiessen A, Woike T, Steudtner R. Time-resolved photoluminescence spectroscopy of NbNb4+ and O- polarons in LiNbO3 single crystals Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.174116  0.545
2016 Kehr SC, McQuaid RGP, Ortmann L, Kämpfe T, Kuschewski F, Lang D, Döring J, Gregg JM, Eng LM. A Local Superlens Acs Photonics. 3: 20-26. DOI: 10.1021/Acsphotonics.5B00365  0.501
2016 Zhang Y, Kämpfe T, Bai G, Mietschke M, Yuan F, Zopf M, Abel S, Eng LM, Hühne R, Fompeyrine J, Ding F, Schmidt OG. Upconversion photoluminescence of epitaxial Yb3+/Er3+ codoped ferroelectric Pb(Zr,Ti)O3 films on silicon substrates Thin Solid Films. 607: 32-35. DOI: 10.1016/J.Tsf.2016.03.046  0.544
2015 Kämpfe T, Reichenbach P, Haußmann A, Woike T, Soergel E, Eng LM. Real-time three-dimensional profiling of ferroelectric domain walls Applied Physics Letters. 107: 152905. DOI: 10.1063/1.4933171  0.566
2014 Kämpfe T, Reichenbach P, Schröder M, Haußmann A, Eng LM, Woike T, Soergel E. Optical three-dimensional profiling of charged domain walls in ferroelectrics by Cherenkov second-harmonic generation Physical Review B. 89: 35314. DOI: 10.1103/Physrevb.89.035314  0.525
2014 Reichenbach P, Kämpfe T, Thiessen A, Haußmann A, Woike T, Eng LM. Multiphoton photoluminescence contrast in switched Mg:LiNbO3 and Mg:LiTaO3 single crystals Applied Physics Letters. 105. DOI: 10.1063/1.4896579  0.562
2014 Reichenbach P, Kämpfe T, Thiessen A, Schröder M, Haußmann A, Woike T, Eng LM. Multiphoton-induced luminescence contrast between antiparallel ferroelectric domains in Mg-doped LiNbO3 Journal of Applied Physics. 115. DOI: 10.1063/1.4881496  0.582
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