Year |
Citation |
Score |
2019 |
Lee S, Lim H, Lee S. Ab Initio-Based Structural and Thermodynamic Aspects of the Electrochemical Lithiation of Silicon Nanoparticles Catalysts. 10: 8. DOI: 10.3390/Catal10010008 |
0.316 |
|
2019 |
Lee S, Hwang GS. Structure and Stability of Small Self-interstitial Clusters in Si: Prediction by First Principles-based Monte Carlo Simulations Ecs Transactions. 6: 339-344. DOI: 10.1149/1.2727418 |
0.318 |
|
2017 |
Cho J, Lee S, Yoon SP, Han J, Nam SW, Lee K, Ham HC. Role of Heteronuclear Interactions in Selective H2 Formation from HCOOH Decomposition on Bimetallic Pd/M (M = Late Transition FCC Metal) Catalysts Acs Catalysis. 7: 2553-2562. DOI: 10.1021/Acscatal.6B02825 |
0.333 |
|
2016 |
Lee S, Cho J, Jang JH, Han J, Yoon SP, Nam SW, Lim TH, Ham HC. Impact of d-Band Occupancy and Lattice Contraction on Selective Hydrogen Production from Formic Acid in the Bimetallic Pd3M (M = Early Transition 3d Metals) Catalysts Acs Catalysis. 6: 134-142. DOI: 10.1021/Acscatal.5B01691 |
0.317 |
|
2015 |
Cho J, Lee S, Han J, Yoon SP, Nam SW, Choi SH, Hong SA, Lee KY, Ham HC. Enhanced Selectivity to H2 Formation in Decomposition of HCOOH on the Ag19@Pd60 Core-Shell Nanocluster from First-Principles. Journal of Nanoscience and Nanotechnology. 15: 8233-7. PMID 26726494 DOI: 10.1166/Jnn.2015.11442 |
0.699 |
|
2014 |
Cho J, Lee S, Han J, Yoon SP, Nam SW, Choi SH, Lee KY, Ham HC. Importance of ligand effect in selective hydrogen formation via formic acid decomposition on the bimetallic Pd/Ag catalyst from first-principles Journal of Physical Chemistry C. 118: 22553-22560. DOI: 10.1021/Jp5050817 |
0.309 |
|
2013 |
Kim MS, Lee SH, Yoon H, Jung JH, Leem JY. Effects of post-annealing on structural and optical properties of a-axis oriented ZnO nanorods. Journal of Nanoscience and Nanotechnology. 13: 6236-9. PMID 24205636 DOI: 10.1166/Jnn.2013.7688 |
0.314 |
|
2011 |
Bondi RJ, Lee S, Hwang GS. First-principles study of the structural, electronic, and optical properties of oxide-sheathed silicon nanowires. Acs Nano. 5: 1713-23. PMID 21366232 DOI: 10.1021/Nn102232U |
0.686 |
|
2011 |
Bondi RJ, Lee S, Hwang GS. First-Principles Prediction of Optical Absorption Enhancement for Si Native Defect Clusters under Biaxial Strain Electrochemical and Solid State Letters. 14: 1. DOI: 10.1149/1.3511714 |
0.655 |
|
2011 |
Lee S, Bondi RJ, Hwang GS. Ab initio parameterized valence force field for the structure and energetics of amorphous SiO x (0⩽x⩽2) materials Physical Review B. 84: 45202. DOI: 10.1103/Physrevb.84.045202 |
0.649 |
|
2011 |
Lee Y, Lee S, Hwang GS. Effects of vacancy defects on thermal conductivity in crystalline silicon: A nonequilibrium molecular dynamics study Physical Review B. 83. DOI: 10.1103/Physrevb.83.125202 |
0.721 |
|
2011 |
Lee S, Hwang GS. Valence force field-based Monte Carlo bond-rotation method for the determination of sp2-bonded carbon structures Journal of Applied Physics. 110: 93524. DOI: 10.1063/1.3660383 |
0.586 |
|
2011 |
Lee S, Bondi RJ, Hwang GS. Atomistic structural description of the Si(001)/a-SiO2 interface: The influence of different Keating-like potential parameters Journal of Applied Physics. 109: 113519. DOI: 10.1063/1.3581110 |
0.657 |
|
2010 |
Bondi RJ, Lee S, Hwang GS. Role of structural disorder in optical absorption in silicon Physical Review B. 82: 115214. DOI: 10.1103/Physrevb.82.115214 |
0.584 |
|
2010 |
Bondi RJ, Lee S, Hwang GS. Strain effects on the stability and structure of vacancy clusters in Si: A first-principles study Physical Review B. 81: 245206. DOI: 10.1103/Physrevb.81.245206 |
0.683 |
|
2010 |
Bondi RJ, Lee S, Hwang GS. First-principles study of the mechanical and optical properties of amorphous hydrogenated silicon and silicon-rich silicon oxide Physical Review B. 81: 195207. DOI: 10.1103/Physrevb.81.195207 |
0.614 |
|
2009 |
Lee S, Bondi RJ, Hwang GS. Formation and structure of vacancy defects in silicon: Combined metropolis monte carlo, tight-binding molecular dynamics, and density functional theory calculations Physical Review B. 80: 245209. DOI: 10.1103/Physrevb.80.245209 |
0.686 |
|
2009 |
Bondi RJ, Lee S, Hwang GS. Theoretical characterization of silicon self-interstitial clusters in uniform strain fields Physical Review B. 80: 125202. DOI: 10.1103/Physrevb.80.125202 |
0.685 |
|
2009 |
Bondi RJ, Lee S, Hwang GS. Biaxial strain effects on the structure and stability of self-interstitial clusters in silicon Physical Review B. 79: 104106. DOI: 10.1103/Physrevb.79.104106 |
0.655 |
|
2009 |
Lee S, Bondi RJ, Hwang GS. Integrated atomistic modelling of interstitial defect growth in silicon Molecular Simulation. 35: 867-879. DOI: 10.1080/08927020902929802 |
0.671 |
|
2009 |
Bondi RJ, Lee S, Hwang GS. Prediction of the formation of stable periodic self-interstitial cluster chains [(I4)m,m=1–4] in Si under biaxial strain Applied Physics Letters. 94: 264101. DOI: 10.1063/1.3160545 |
0.667 |
|
2008 |
Kuo CL, Lee S, Hwang GS. Strain-induced formation of surface defects in amorphous silica: a theoretical prediction. Physical Review Letters. 100: 076104. PMID 18352574 DOI: 10.1103/Physrevlett.100.076104 |
0.676 |
|
2008 |
Lee S, Hwang GS. Theoretical determination of stable fourfold coordinated vacancy clusters in silicon Physical Review B. 78: 125310. DOI: 10.1103/Physrevb.78.125310 |
0.653 |
|
2008 |
Lee S, Hwang GS. Growth and shape transition of small silicon self-interstitial clusters Physical Review B. 78: 45204. DOI: 10.1103/Physrevb.78.045204 |
0.676 |
|
2008 |
Lee S, Hwang GS. Structure and stability of small compact self-interstitial clusters in crystalline silicon Physical Review B. 77: 85210. DOI: 10.1103/Physrevb.77.085210 |
0.66 |
|
2008 |
Kuo CL, Lee S, Hwang GS. Structure and dynamics of silicon-oxygen pairs and their role in silicon self-diffusion in amorphous silica Journal of Applied Physics. 104: 54906. DOI: 10.1063/1.2974757 |
0.636 |
|
2007 |
Yu D, Lee S, Hwang GS. On the origin of Si nanocrystal formation in a Si suboxide matrix Journal of Applied Physics. 102: 84309. DOI: 10.1063/1.2800268 |
0.651 |
|
2006 |
Lee S, Yu D, Hwang GS. Understanding of the synthesis and structure of Si nanocrystals in an oxide matrix from first principles based atomistic modeling Mrs Proceedings. 958: 301-306. DOI: 10.1557/Proc-0958-L08-10 |
0.625 |
|
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