Year |
Citation |
Score |
1992 |
Novembre AE, Kometani JM, Tai WW, Reichmanis E, Thompson LF, Hanson JE. Sensitivity enhancement of t-BOC based chemically amplified resists through optimization of process prebake conditions. Journal of Photopolymer Science and Technology. 5: 9-15. DOI: 10.2494/Photopolymer.5.9 |
0.681 |
|
1992 |
Novembre AE, Tai WW, Kometani JM, Hanson JE, Nalamasu O, Taylor GN, Reichmanis E, Thompson LF. Radiation-induced chemistry of poly(4-[(tert-butoxycarbonyl)oxy]styrene-co-sulfur dioxide) Chemistry of Materials. 4: 278-284. DOI: 10.1021/Cm00020A012 |
0.647 |
|
1992 |
Novembre AE, Hanson JE, Kometani JM, Tai WW, Nalamasu O, Taylor GN, Reichmanis E, Thompson LF, Tomes DN. Lithographic properties of chemically amplified resists based on copolymers of 4-tert-butoxycarbonyloxystyrene (TBS) and sulfur dioxide (SO2) Microelectronic Engineering. 17: 257-260. DOI: 10.1016/0167-9317(92)90051-R |
0.62 |
|
1991 |
NALAMASU O, CHENG M, TIMKO AG, POL V, REICHMANIS E, THOMPSON LF. An overview of resist processing for deep-UV lithography. Journal of Photopolymer Science and Technology. 4: 299-318. DOI: 10.2494/Photopolymer.4.299 |
0.596 |
|
1991 |
Kanga RS, Kometani JM, Reichmanis E, Hanson JE, Nalamasu O, Thompson LF, Heffner SA, Tai WW, Trevor P. Synthesis and characterization of poly[4-((tert -butoxycarbonyl)oxy)styrene-sulfone] Chemistry of Materials. 3: 660-667. DOI: 10.1021/Cm00016A019 |
0.653 |
|
1991 |
Reichmanis E, Thompson LF. Chemistry and processes for deep-UV resists Microelectronic Engineering. 13: 3-10. DOI: 10.1016/0167-9317(91)90007-Z |
0.593 |
|
1991 |
Novembre AE, Hanson JE, Kometani JM, Tai WW, Reichmanis E, Thompson LF, West RJ. Arylmethyl sulfones. A new class of photoacid generators Photopolymers: Principles - Processes and Materials. 41-50. DOI: 10.1002/Pen.760322006 |
0.615 |
|
1990 |
Houlihan FM, Neenan TX, Reichmanis E, Kometani JM, Thompson LF, Chin T, Nalamasu O. Chemically amplified resists: The chemistry and lithographic characteristics of nitrobenzyl benzenesulfonate derivatives. Journal of Photopolymer Science and Technology. 3: 259-273. DOI: 10.2494/Photopolymer.3.259 |
0.603 |
|
1990 |
Neenan TX, Houlihan FM, Reichmanis E, Kometani JM, Bachman BJ, Thompson LF. Photo- and thermochemistry of select 2,6-dinitrobenzyl esters in polymer matrices. Studies pertaining to chemical amplification and imaging Macromolecules. 23: 145-150. DOI: 10.1021/Ma00203A025 |
0.541 |
|
1990 |
Reichmanis E, Thompson LF. Challenges in Lithographic Materials and Processes At&T Technical Journal. 69: 32-45. DOI: 10.1002/J.1538-7305.1990.Tb00485.X |
0.553 |
|
1989 |
Reichmanis E, Thompson LF. Polymer materials for microlithography Chemical Reviews. 89: 1273-1289. DOI: 10.1146/Annurev.Ms.17.080187.001315 |
0.54 |
|
1989 |
Houlihan FM, Reichmanis E, Tarascon RG, Taylor GN, Hellman MY, Thompson LF. Gas chromatography/mass spectroscopy study of the thermolysis and acidolysis of poly[4-(tert-butyloxycarbonyloxy)-.alpha.-methylstyrene], poly[4-(tert-butoxycarbonyloxy)styrene], and poly[4-(tert-butyloxycarbonyloxy)styrene sulfone] Macromolecules. 22: 2999-3004. DOI: 10.1021/Ma00197A021 |
0.487 |
|
1989 |
Tarascon RG, Reichmanis E, Houlihan FM, Shugard A, Thompson LF. Poly(t-BOC-styrene sulfone)-based chemically amplified resists for deep-UV lithography Polymer Engineering and Science. 29: 850-855. DOI: 10.1002/Pen.760291304 |
0.62 |
|
1977 |
Bowden MJ, Thompson LF. Effect of olefin structure on the vapor‐development of poly (olefin sulfones) under electron irradiation Polymer Engineering and Science. 17: 269-273. DOI: 10.1002/Pen.760170411 |
0.327 |
|
1974 |
Thompson LF, Feit ED, Heidenreich RD. Lithography and radiation chemistry of epoxy containing negative electron resists Polymer Engineering and Science. 14: 529-533. DOI: 10.1002/Pen.760140713 |
0.386 |
|
1974 |
Bowden MJ, Thompson LF. Vapor development of poly(olefin sulfone) resists Polymer Engineering and Science. 14: 525-528. DOI: 10.1002/Pen.760140712 |
0.357 |
|
1973 |
Thompson LF, Feit ED, Melliar‐Smith CM, Heidenreich RD. Fundamental aspects of electron beam lithography. II. Low‐voltage exposure of negative resists Journal of Applied Physics. 44: 4048-4051. DOI: 10.1063/1.1662893 |
0.394 |
|
1973 |
Heidenreich RD, Thompson LF, Feit ED, Melliar‐Smith CM. Fundamental aspects of electron beam lithography. I. Depth‐dose response of polymeric electron beam resists Journal of Applied Physics. 44: 4039-4047. DOI: 10.1063/1.1662892 |
0.361 |
|
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