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Hung Ta Wang - Publications

Affiliations: 
2008 Chemical Engineering University of Florida, Gainesville, Gainesville, FL, United States 
 2008-2011 Chemistry University of California, Berkeley, Berkeley, CA, United States 
 2011-2016 Chemical and Biological Engineering The University of Alabama, Tuscaloosa, AL 
 2016- Physical Science and Technology ShanghaiTech University 
Website:
http://hr.shanghaitech.edu.cn/2018/1206/c4789a37895/page.htm
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31 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Anderson T, Ren F, Pearton S, Kang BS, Wang HT, Chang CY, Lin J. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. Sensors (Basel, Switzerland). 9: 4669-94. PMID 22408548 DOI: 10.3390/S90604669  0.415
2008 Lee J, Kang BS, Hicks B, Chancellor TF, Chu BH, Wang HT, Keselowsky BG, Ren F, Lele TP. The control of cell adhesion and viability by zinc oxide nanorods. Biomaterials. 29: 3743-9. PMID 18550161 DOI: 10.1016/J.Biomaterials.2008.05.029  0.328
2008 Wang HT, Nafday OA, Haaheim JR, Tevaarwerk E, Amro NA, Sanedrin RG, Chang CY, Ren F, Pearton SJ. Toward conductive traces: Dip Pen Nanolithography® of silver nanoparticle-based inks Applied Physics Letters. 93. DOI: 10.1063/1.2995859  0.34
2008 Chen KH, Kang BS, Wang HT, Lele TP, Ren F, Wang YL, Chang CY, Pearton SJ, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. C-erbB-2 sensing using AlGaNGaN high electron mobility transistors for breast cancer detection Applied Physics Letters. 92. DOI: 10.1063/1.2926656  0.335
2007 Kang BS, Wang HT, Ren F, Pearton SJ, Morey TE, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors Applied Physics Letters. 91: 252103. DOI: 10.1063/1.2825574  0.392
2007 Wang HT, Kang BS, Ren F, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Electrical detection of kidney injury molecule-1 with AlGaN∕GaN high electron mobility transistors Applied Physics Letters. 91: 222101. DOI: 10.1063/1.2815931  0.356
2007 Kang BS, Wang HT, Lele TP, Tseng Y, Ren F, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Prostate specific antigen detection using AlGaNGaN high electron mobility transistors Applied Physics Letters. 91. DOI: 10.1063/1.2772192  0.336
2007 Wang HT, Kang BS, Chancellor TF, Lele TP, Tseng Y, Ren F, Pearton SJ, Johnson WJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Fast electrical detection of Hg(II) ions with AlGaN/GaN high electron mobility transistors Applied Physics Letters. 91. DOI: 10.1063/1.2764554  0.35
2007 Kang BS, Wang HT, Ren F, Gila BP, Abernathy CR, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region Applied Physics Letters. 91: 012110. DOI: 10.1063/1.2754637  0.338
2007 Wang H, Anderson TJ, Kang BS, Ren F, Li C, Low Z, Lin J, Gila BP, Pearton SJ, Osinsky A, Dabiran A. Stable hydrogen sensors from AlGaN∕GaN heterostructure diodes with TiB2-based Ohmic contacts Applied Physics Letters. 90: 252109. DOI: 10.1063/1.2751107  0.466
2007 Wang HT, Anderson TJ, Ren F, Li C, Low ZN, Lin J, Gila BP, Pearton SJ, Osinsky A, Dabiran A. Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes Ecs Transactions. 6: 289-295. DOI: 10.1063/1.2408635  0.328
2007 Tien L, Norton D, Gila B, Pearton S, Wang H, Kang B, Ren F. Detection of hydrogen with SnO2-coated ZnO nanorods Applied Surface Science. 253: 4748-4752. DOI: 10.1016/J.Apsusc.2006.10.056  0.515
2007 Tien L, Norton D, Pearton S, Wang H, Ren F. Nucleation control for ZnO nanorods grown by catalyst-driven molecular beam epitaxy Applied Surface Science. 253: 4620-4625. DOI: 10.1016/J.Apsusc.2006.10.012  0.388
2007 Wright JS, Khanna R, Voss LF, Stafford L, Gila BP, Norton DP, Pearton SJ, Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Shen H, LaRoche JR, et al. Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO Applied Surface Science. 253: 3766-3772. DOI: 10.1016/J.Apsusc.2006.07.090  0.668
2007 Herrero AM, Gerger A, Gila B, Pearton S, Wang H, Jang S, Anderson T, Chen J, Kang B, Ren F, Shen H, LaRoche JR, Smith KV. Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77K Applied Surface Science. 253: 3298-3302. DOI: 10.1016/J.Apsusc.2006.07.032  0.671
2007 Chang C, Pearton SJ, Huang P, Chi G, Wang H, Chen J, Ren F, Chen K, Chen L. Control of nucleation site density of GaN nanowires Applied Surface Science. 253: 3196-3200. DOI: 10.1016/J.Apsusc.2006.07.007  0.451
2007 Wright J, Stafford L, Gila B, Norton D, Pearton S, Wang H, Ren F. Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO Journal of Electronic Materials. 36: 488-493. DOI: 10.1007/S11664-006-0039-7  0.542
2006 Kang B, Wang H, Tien LC, Ren F, Gila B, Norton D, Abernathy C, Lin J, Pearton S. Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors Sensors. 6: 643-666. DOI: 10.3390/S6060643  0.453
2006 Wright J, Stafford L, Gila BP, Norton DP, Pearton SJ, Wang H, Ren F. Effect of Cryogenic Temperature Deposition of Various Metal Contacts to Bulk, Single-Crystal n-type ZnO Mrs Proceedings. 957. DOI: 10.1557/PROC-0957-K09-02  0.467
2006 Wang H, Kang BS, Ren F, Herrero A, Gerger AM, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Thermal Stability of Au Schottky Diodes on GaAs Deposited at Either 77 or 300 K Journal of the Electrochemical Society. 153: G787. DOI: 10.1149/1.2212049  0.486
2006 Wang H, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Herrero A, Gerger AM, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Improved Au Schottky contacts on GaAs using cryogenic metal deposition Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1799. DOI: 10.1116/1.2213270  0.678
2006 Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Voss LF, Stafford L, Khanna R, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Increased Schottky barrier heights for Au on n- And p-type GaN using cryogenic metal deposition Applied Physics Letters. 89. DOI: 10.1063/1.2356698  0.679
2006 Chang CY, Tsao FC, Pan CJ, Chi GC, Wang HT, Chen JJ, Ren F, Norton DP, Pearton SJ, Chen KH, Chen LC. Electroluminescence from ZnO nanowire/polymer composite p-n junction Applied Physics Letters. 88. DOI: 10.1063/1.2198480  0.397
2006 Wang H, Kang BS, Chen J, Anderson T, Jang S, Ren F, Kim HS, Li YJ, Norton DP, Pearton SJ. Band-edge electroluminescence from N+-implanted bulk ZnO Applied Physics Letters. 88: 102107. DOI: 10.1063/1.2186508  0.609
2005 Sippel-Oakley J, Wang HT, Kang BS, Wu Z, Ren F, Rinzler AG, Pearton SJ. Carbon nanotube films for room temperature hydrogen sensing. Nanotechnology. 16: 2218-21. PMID 20817998 DOI: 10.1088/0957-4484/16/10/040  0.393
2005 Voss L, Gila BP, Pearton SJ, Wang H, Ren F. Characterization of bulk GaN rectifiers for hydrogen gas sensing Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 2373. DOI: 10.1116/1.2110343  0.484
2005 Kryliouk O, Park HJ, Wang HT, Kang BS, Anderson TJ, Ren F, Pearton SJ. Pt-coated InN nanorods for selective detection of hydrogen at room temperature Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1891. DOI: 10.1116/1.2008268  0.46
2005 Tien LC, Sadik PW, Norton DP, Voss LF, Pearton SJ, Wang HT, Kang BS, Ren F, Jun J, Lin J. Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2136070  0.452
2005 Wang HT, Kang BS, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Gila BP, Abernathy CR, Pearton SJ. Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN/GaN high electron mobility transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2117617  0.45
2005 Wang HT, Kang BS, Ren F, Tien LC, Sadik PW, Norton DP, Pearton SJ, Lin J. Hydrogen-selective sensing at room temperature with ZnO nanorods Applied Physics Letters. 86: 243503. DOI: 10.1063/1.1949707  0.441
2005 Wang H, Kang B, Ren F, Tien L, Sadik P, Norton D, Pearton S, Lin J. Detection of hydrogen at room temperature with catalyst-coated multiple ZnO nanorods Applied Physics A. 81: 1117-1119. DOI: 10.1007/S00339-005-3310-5  0.496
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