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Rudolf M Tromp - Publications

Affiliations: 
1983- IBM Thomas J. Watson Research Center, Yorktown Heights, NY, United States 
 2006- Leiden University, Leiden, Netherlands 
Area:
structure and growth of surfaces and interfaces, surface phase transitions, modifications of crystal growth by organic and inorganic monolayers ('surfactants'), and the development of novel experimental techniques and methods
Website:
https://www.avs.org/Awards-Recognition/Awardee-Interviews/Interviews/Rudolf-Tromp/Bio
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136 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Bespalov I, Zhang Y, Haitjema J, Tromp RM, van der Molen SJ, Brouwer AM, Jobst J, Castellanos S. The Key Role of Very-Low-Energy-Electrons in Tin-based Molecular Resists for Extreme Ultraviolet Nanolithography. Acs Applied Materials & Interfaces. PMID 32019303 DOI: 10.1021/Acsami.9B19004  0.325
2017 Jobst J, Kautz J, Mytiliniou M, Tromp RM, van der Molen SJ. Reprint of Low-energy electron potentiometry. Ultramicroscopy. 183: 8-14. PMID 29103783 DOI: 10.1016/J.Ultramic.2017.10.009  0.362
2016 Fleurence A, Gill TG, Friedlein R, Sadowski JT, Aoyagi K, Copel M, Tromp RM, Hirjibehedin CF, Yamada-Takamura Y. Single-domain epitaxial silicene on diboride thin films Applied Physics Letters. 108. DOI: 10.1063/1.4945370  0.38
2015 Geelen D, Thete A, Schaff O, Kaiser A, van der Molen SJ, Tromp R. eV-TEM: Transmission electron microscopy in a low energy cathode lens instrument. Ultramicroscopy. PMID 26165485 DOI: 10.1016/J.Ultramic.2015.06.014  0.309
2015 Gupta T, Hannon JB, Tersoff J, Tromp RM, Ott JA, Bruley J, Steingart DA. Strain-driven mound formation of substrate under epitaxial nanoparticles. Nano Letters. 15: 34-8. PMID 25506710 DOI: 10.1021/Nl502516Y  0.38
2011 Sun J, Hannon JB, Tromp RM, Pohl K. Highly uniform step and terrace structures on SiC(0001) surfaces Ibm Journal of Research and Development. 55. DOI: 10.1147/Jrd.2011.2156230  0.419
2011 Copel M, Oida S, Kasry A, Bol AA, Hannon J, Tromp R. Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100) Applied Physics Letters. 98: 113103. DOI: 10.1063/1.3565968  0.321
2011 Sikharulidze I, Van Gastel R, Schramm S, Abrahams JP, Poelsema B, Tromp RM, Van Der Molen SJ. Low energy electron microscopy imaging using Medipix2 detector Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 633: S239-S242. DOI: 10.1016/J.Nima.2010.06.177  0.302
2009 Tromp RM, Fujikawa Y, Hannon JB, Ellis AW, Berghaus A, Schaff O. A simple energy filter for low energy electron microscopy/photoelectron emission microscopy instruments Journal of Physics: Condensed Matter. 21: 314007-314007. PMID 21828568 DOI: 10.1088/0953-8984/21/31/314007  0.312
2009 Hannon JB, Tromp RM, Medhekar NV, Shenoy VB. Spontaneous formation and growth of a new polytype on SiC(0001). Physical Review Letters. 103: 256101. PMID 20366264 DOI: 10.1103/Physrevlett.103.256101  0.383
2008 Fujikawa Y, Sakurai T, Tromp RM. Surface plasmon microscopy using an energy-filtered low energy electron microscope. Physical Review Letters. 100: 126803. PMID 18517897 DOI: 10.1103/Physrevlett.100.126803  0.359
2007 Medhekar NV, Shenoy VB, Hannon JB, Tromp RM. Self-assembling surface stress domains far from equilibrium Applied Physics Letters. 91. DOI: 10.1063/1.2825568  0.342
2007 Weidkamp KP, Tromp RM, Hamers RJ. Epitaxial growth of large pentacene crystals on Si(001) surfaces functionalized with molecular monolayers Journal of Physical Chemistry C. 111: 16489-16497. DOI: 10.1021/Jp074560X  0.468
2006 Kodambaka S, Hannon JB, Tromp RM, Ross FM. Control of Si nanowire growth by oxygen. Nano Letters. 6: 1292-6. PMID 16771597 DOI: 10.1021/Nl060059P  0.361
2006 Hannon JB, Kodambaka S, Ross FM, Tromp RM. The influence of the surface migration of gold on the growth of silicon nanowires Nature. 440: 69-71. PMID 16452928 DOI: 10.1038/Nature04574  0.391
2006 Kodambaka S, Hannon J, Tromp R, Reuter M, Tersoff J, Ross F. Si and Ge Nanowire Growth Mechanisms Observed using In Situ Microscopy Microscopy and Microanalysis. 12: 472-473. DOI: 10.1017/S1431927606063653  0.4
2005 Thayer GE, Sadowski JT, Meyer zu Heringdorf F, Sakurai T, Tromp RM. Role of surface electronic structure in thin film molecular ordering. Physical Review Letters. 95: 256106. PMID 16384479 DOI: 10.1103/Physrevlett.95.256106  0.427
2005 Sadowski JT, Nagao T, Yaginuma S, Fujikawa Y, Al-Mahboob A, Nakajima K, Sakurai T, Thayer GE, Tromp RM. Thin bismuth film as a template for pentacene growth Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1865350  0.42
2004 Thayer GE, Hannon JB, Tromp RM. Shape and stability of self-assembled surface domains. Nature Materials. 3: 95-8. PMID 14716303 DOI: 10.1038/Nmat1050  0.342
2003 Tromp R. Surface diffusion: Atoms go underground. Nature Materials. 2: 212-213. PMID 12690388 DOI: 10.1038/Nmat869  0.359
2003 Thayer GE, Sadowski JT, Hannon JB, Tromp RM. Growth and Stability of Bi films on Si(111) studied by LEEM Microscopy and Microanalysis. 9: 906-907. DOI: 10.1017/S143192760344453X  0.355
2002 Hannon JB, Tersoff J, Reuter MC, Tromp RM. Influence of supersaturation on surface structure. Physical Review Letters. 89: 266103. PMID 12484836 DOI: 10.1103/PHYSREVLETT.89.266103  0.32
2002 Hannon JB, Tersoff J, Tromp RM. Surface stress and thermodynamic nanoscale size selection. Science. 295: 299-301. PMID 11786636 DOI: 10.1126/Science.1066420  0.356
2002 Bennett PA, Ashcroft B, He Z, Tromp RM. Growth dynamics of titanium silicide nanowires observed with low-energy electron microscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2500-2504. DOI: 10.1116/1.1525006  0.381
2002 Hannon JB, Tersoff J, Tromp RM. The stability of triangular 'droplet' phases on Si(111) Journal of Crystal Growth. 237: 181-187. DOI: 10.1016/S0022-0248(01)01871-1  0.309
2001 Hannon JB, Heringdorf F-Mz, Tersoff J, Tromp RM. Phase coexistence during surface phase transitions. Physical Review Letters. 86: 4871-4874. PMID 11384369 DOI: 10.1103/Physrevlett.86.4871  0.315
2001 Dunn DN, Hull R, Ross FM, Tromp RM. Texture transformations in reactive metal films deposited upon amorphous substrates Journal of Applied Physics. 89: 2635-2640. DOI: 10.1063/1.1337078  0.307
2000 Stach EA, Schwarz KW, Hull R, Ross FM, Tromp RM. New mechanism for dislocation blocking in strained layer epitaxial growth Physical Review Letters. 84: 947-950. PMID 11017412 DOI: 10.1103/Physrevlett.84.947  0.307
2000 Tromp RM, Ross FM, Reuter MC. Instability-driven SiGe island growth Physical Review Letters. 84: 4641-4644. PMID 10990760 DOI: 10.1103/Physrevlett.84.4641  0.342
2000 Maxson JB, Savage DE, Liu F, Tromp RM, Reuter MC, Lagally MG. Thermal roughening of a thin film: A new type of roughening transition Physical Review Letters. 85: 2152-5. PMID 10970485 DOI: 10.1103/Physrevlett.85.2152  0.462
2000 Stach EA, Hull R, Tromp RM, Ross FM, Reuter MC, Bean JC. In-situtransmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si (001) heterostructures Philosophical Magazine A. 80: 2159-2200. DOI: 10.1080/01418610008212156  0.351
1999 Ross FM, Tromp RM, Reuter MC. Transition States Between Pyramids and Domes During Ge/Si Island Growth. Science. 286: 1931-1934. PMID 10583951 DOI: 10.1126/Science.286.5446.1931  0.338
1999 Ross FM, Bennett PA, Tromp RM, Tersoff J, Reuter M. Growth kinetics of CoSi2 and Ge islands observed with in situ transmission electron microscopy Micron. 30: 21-32. DOI: 10.1016/S0968-4328(98)00041-9  0.413
1999 Hull R, Stach EA, Tromp R, Ross F, Reuter M. Interactions of Moving Dislocations in Semiconductors with Point, Line and Planar Defects Physica Status Solidi (a). 171: 133-146. DOI: 10.1002/(Sici)1521-396X(199901)171:1<133::Aid-Pssa133>3.0.Co;2-D  0.342
1998 Ross FM, Tersoff J, Reuter M, Legoues FK, Tromp RM. In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si. Microscopy Research and Technique. 42: 281-94. PMID 9779833 DOI: 10.1002/(Sici)1097-0029(19980915)42:4<281::Aid-Jemt7>3.0.Co;2-T  0.391
1998 Ross FM, Tersoff J, Tromp RM. Ostwald Ripening of Self-Assembled Germanium Islands on Silicon(100). Microscopy and Microanalysis. 4: 254-263. PMID 9767662 DOI: 10.1017/S1431927698980254  0.396
1998 Stach EA, Hull R, Tromp RM, ROSS FM, Reuter MC, Bean JC. Quantitative Experimental Determination of The Effect of Dislocation - Dislocation Interactions on Strain Relaxation in Lattice Mismatched Heterostructures Mrs Proceedings. 535. DOI: 10.1557/Proc-535-15  0.331
1998 Tromp RM, Mankos M, Reuter MC, Ellis AW, Copel M. A New Low Energy Electron Microscope Surface Review and Letters. 5: 1189-1197. DOI: 10.1142/S0218625X98001523  0.345
1998 Tromp RM, Mankos M. Thermal Adatoms on Si(001) Physical Review Letters. 81: 1050-1053. DOI: 10.1103/Physrevlett.81.1050  0.367
1998 Ross FM, Tersoff J, Tromp RM. Coarsening of Self-Assembled Ge Quantum Dots on Si(001) Physical Review Letters. 80: 984-987. DOI: 10.1103/Physrevlett.80.984  0.33
1998 Stach EA, Hull R, Tromp RM, Reuter MC, Copel M, LeGoues FK, Bean JC. Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures Journal of Applied Physics. 83: 1931-1937. DOI: 10.1063/1.366984  0.435
1997 Rotermund HH, Haas G, Franz RU, Tromp RM, Ertl G. Imaging Pattern Formation in Surface Reactions from Ultrahigh Vacuum up to Atmospheric Pressures Science. 386: 10-23. DOI: 10.1126/Science.270.5236.608  0.32
1997 Tanaka S, Umbach CC, Blakely JM, Tromp RM, Mankos M. Atomic step distributions on annealed periodic Si(001) gratings Journal of Vacuum Science and Technology. 15: 1345-1350. DOI: 10.1116/1.580587  0.358
1997 Tanaka S, Bartelt NC, Umbach CC, Tromp RM, Blakely JM. Step Permeability and the Relaxation of Biperiodic Gratings on Si(001) Physical Review Letters. 78: 3342-3345. DOI: 10.1103/Physrevlett.78.3342  0.424
1997 Kavanagh KL, Reuter MC, Tromp RM. High-temperature epitaxy of PtSi/Si(0 0 1) Journal of Crystal Growth. 173: 393-401. DOI: 10.1016/S0022-0248(96)01047-0  0.406
1996 Bartelt NC, Theis W, Tromp RM. Ostwald ripening of two-dimensional islands on Si(001). Physical Review B. 54: 11741-11751. PMID 9984965 DOI: 10.1103/Physrevb.54.11741  0.375
1996 Tanaka S, Umbach CC, Blakely JM, Tromp RM, Mankos M. Step Contours in the Development of Periodically Modulated Vicinal Surfaces Mrs Proceedings. 440. DOI: 10.1557/Proc-440-25  0.328
1996 Haas G, Franz RU, Rotermund HH, Tromp RM, Ertl G. Imaging surface reactions with light Surface Science. 1003-1006. DOI: 10.1016/0039-6028(95)01316-4  0.366
1996 Hammar M, LeGoues FK, Tersoff J, Reuter MC, Tromp RM. In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. {Si(001) }/{Ge} Surface Science. 349: 129-144. DOI: 10.1016/0039-6028(95)01068-8  0.38
1996 LeGoues FK, Hammar M, Reuter MC, Tromp RM. In situ TEM study of the growth of Ge on Si(111) Surface Science. 349: 249-266. DOI: 10.1016/0039-6028(95)00900-0  0.44
1995 Theis W, Bartelt NC, Tromp RM. Chemical potential maps and spatial correlations in 2D-island ripening on Si(001). Physical Review Letters. 75: 3328-3331. PMID 10059556 DOI: 10.1103/Physrevlett.75.3328  0.378
1995 Tromp RM, Theis W, Bartelt NC. Si(001) Homoepitaxial Growth Mrs Proceedings. 404. DOI: 10.1557/Proc-404-107  0.389
1995 Kavanagh KL, Morgan BA, Talin AA, Ring KM, Williams RS, Reuter MC, Tromp RM. Beem and UHV-TEM Studies of PtSi/Si(001) Mrs Proceedings. 402: 461. DOI: 10.1557/Proc-402-461  0.397
1995 LeGoues FK, Tersoff J, Reuter MC, Hammar M, Tromp R. Relaxation mechanism of Ge islands/Si(001) at low temperature Applied Physics Letters. 67: 2317-2319. DOI: 10.1063/1.115138  0.395
1995 Hoegen MH, Falta J, Copel M, Tromp RM. Surfactants in Si(111) homoepitaxy Applied Physics Letters. 66: 487-489. DOI: 10.1063/1.114065  0.396
1995 Tromp RM, Michely T. Atomic-layer titration of surface reactions Nature. 373: 499-501. DOI: 10.1038/373499A0  0.429
1995 Copel M, Tromp RM. Medium energy ion scattering investigation of homoepitaxy on H terminated Si(111) Surface Science. 337. DOI: 10.1016/0039-6028(95)80035-2  0.463
1994 Tersoff J, Gon AWDvd, Tromp RM. Critical island size for layer-by-layer growth. Physical Review Letters. 72: 266-269. PMID 10056101 DOI: 10.1103/Physrevlett.72.266  0.303
1994 Tromp RM. Low-Energy Electron Microscopy Mrs Bulletin. 19: 44-46. DOI: 10.1557/S0883769400036757  0.322
1994 Horn-Von Hoegen M, Copel M, Tsang JC, Reuter MC, Tromp RM. Surfactant-mediated growth of Ge on Si(111) Physical Review B. 50: 10811-10822. DOI: 10.1103/Physrevb.50.10811  0.394
1994 Falta J, Reuter MC, Tromp RM. Growth modes of Ge on GaAs(001) Applied Physics Letters. 65: 1680-1682. DOI: 10.1063/1.112884  0.36
1994 Copel M, Culbertson R, Tromp RM. Relaxation and H coverage of ammonium fluoride treated Si(111) Applied Physics Letters. 65: 2344-2346. DOI: 10.1063/1.112740  0.505
1994 Schell-Sorokin AJ, Tromp RM. Measurement of surface stress during epitaxial growth of Ge on arsenic terminated Si(001) Surface Science. 319: 110-118. DOI: 10.1016/0039-6028(94)90573-8  0.412
1993 Tromp RM, Denier van der Gon AW, LeGoues FK, Reuter MC. Observation of buried interfaces with low energy electron microscopy. Physical Review Letters. 71: 3299-3302. PMID 10054938 DOI: 10.1103/Physrevlett.71.3299  0.381
1993 Tersoff J, Gon AWDVD, Tromp RM. Shape oscillations in growth of small crystals. Physical Review Letters. 70: 1143-1146. PMID 10054297 DOI: 10.1103/Physrevlett.70.1143  0.312
1993 Tersoff J, Tromp RM. Shape transition in growth of strained islands: Spontaneous formation of quantum wires. Physical Review Letters. 70: 2782-2785. PMID 10053651 DOI: 10.1103/Physrevlett.70.2782  0.353
1993 Falta J, Tromp R, Copel M, Pettit G, Kirchner P. Ga-As intermixing in GaAs(001) reconstructions. Physical Review B. 48: 5282-5288. PMID 10009046 DOI: 10.1103/Physrevb.48.5282  0.361
1993 Falta J, Copel M, LeGoues FK, Tromp RM. Medium-energy-ion-scattering investigations of Si and Ge growth on GaAs(001)-c(2 x 8)/(2 x 4). Physical Review. B, Condensed Matter. 47: 9610-9614. PMID 10005028 DOI: 10.1103/Physrevb.47.9610  0.478
1993 Falta J, Copel M, LeGoues FK, Tromp RM. Surfactant coverage and epitaxy of Ge on Ga‐terminated Si(111) Applied Physics Letters. 62: 2962-2964. DOI: 10.1063/1.109157  0.422
1993 Gon AWDvd, Tromp RM, Reuter MC. Low energy electron microscopy studies of Ge and Ag growth on Si(111) Thin Solid Films. 236: 140-145. DOI: 10.1016/0040-6090(93)90659-D  0.437
1992 Bennett PA, Copel M, Cahill D, Falta J, Tromp RM. Ring clusters in transition-metal-silicon surface structures. Physical Review Letters. 69: 1224-1227. PMID 10047159 DOI: 10.1103/Physrevlett.69.1224  0.419
1992 Gon AWDVD, Tromp RM. Phase formation sequence and domain structure: A low-energy-electron-microscopy study of the Si(111)-(√3 × √3 )Ag surface Physical Review Letters. 69: 3519-3522. PMID 10046842 DOI: 10.1103/Physrevlett.69.3519  0.401
1992 Tromp R, Reuter M. Local dimer exchange in surfactant-mediated epitaxial growth. Physical Review Letters. 68: 954-957. PMID 10046041 DOI: 10.1103/Physrevlett.68.954  0.464
1992 Tromp RM, Gon AWDVD, Reuter MC. Surface stress as a driving force for interfacial mixing. Physical Review Letters. 68: 2313-2316. PMID 10045363 DOI: 10.1103/Physrevlett.68.2313  0.413
1992 Kuan TS, Batson PE, Feenstra RM, Slavin AJ, Tromp RM. Application of electron and ion beam analysis techniques to microelectronics Ibm Journal of Research and Development. 36: 183-207. DOI: 10.1147/Rd.362.0183  0.368
1991 Horn-von Hoegen M, LeGoues FK, Copel M, Reuter MC, Tromp RM. Defect self-annihilation in surfactant-mediated epitaxial growth. Physical Review Letters. 67: 1130-1133. PMID 10045083 DOI: 10.1103/Physrevlett.67.1130  0.428
1991 LeGoues FK, Horn-Von Hoegen M, Copel M, Tromp RM. Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111). Physical Review. B, Condensed Matter. 44: 12894-12902. PMID 9999469 DOI: 10.1103/Physrevb.44.12894  0.35
1991 Tromp RM, Reuter MC. Low Energy Electron Microscopy Mrs Proceedings. 237. DOI: 10.1557/PROC-237-349  0.311
1991 Tromp RM, Copel M, Reuter MC, Hoegen MHv, Speidell J, Koudijs R. A new two-dimensional particle detector for a toroidal electrostatic analyzer Review of Scientific Instruments. 62: 2679-2683. DOI: 10.1063/1.1142199  0.331
1990 LeGoues FK, Copel M, Tromp RM. Microstructure and strain relief of Ge films grown layer by layer on Si(001). Physical Review. B, Condensed Matter. 42: 11690-11700. PMID 9995473 DOI: 10.1103/Physrevb.42.11690  0.388
1990 Copel M, Reuter MC, Hoegen MHv, Tromp RM. Influence of surfactants in Ge and Si epitaxy on Si(001). Physical Review B. 42: 11682-11689. PMID 9995472 DOI: 10.1103/Physrevb.42.11682  0.393
1990 Kaxiras E, Pandey KC, Himpsel FJ, Tromp RM. Electronic states due to surface doping: Si(111)3×3B Physical Review B. 41: 1262-1265. DOI: 10.1103/Physrevb.41.1262  0.479
1989 LeGoues FK, Copel M, Tromp R. Novel strain-induced defect in thin molecular-beam epitaxy layers. Physical Review Letters. 63: 1826-1829. PMID 10040683 DOI: 10.1103/Physrevlett.63.1826  0.388
1989 Copel M, Tromp RM. Noble-metal adsorption on Si(111): Medium-energy ion-scattering results for the Ag ( √3×√3 ) R30° reconstruction Physical Review B. 39: 12688-12694. PMID 9948138 DOI: 10.1103/Physrevb.39.12688  0.383
1989 Tromp RM, Krakow W, LeGoues FK. Structure Determination of the Si(111)-CaF 2 Interface Mrs Proceedings. 139: 141. DOI: 10.1557/Proc-139-141  0.397
1989 Tromp RM, Reuter MC, LeGoues FK, Krakow W. Structure of the Si(111)/CaF2 interface Journal of Vacuum Science and Technology. 7: 1910-1913. DOI: 10.1116/1.576027  0.411
1988 Tromp RM, LeGoues FK, Krakow W, Schowalter LJ. Structural characterization of the Si(111)-CaF2 interface by high-resolution transmission electron microscopy. Physical Review Letters. 61: 2274. PMID 10039034 DOI: 10.1103/Physrevlett.61.2274  0.394
1988 Marée PM, Nakagawa K, van der Veen JF, Tromp RM. Structure determination of the Ge(111)-c(2 x 8) surface by medium-energy ion scattering. Physical Review. B, Condensed Matter. 38: 1585-1588. PMID 9946435 DOI: 10.1103/Physrevb.38.1585  0.429
1988 Copel M, Tromp R. Structural perfection of the Si(111)-(1 x 1) As surface. Physical Review B. 37: 2766-2769. PMID 9944848 DOI: 10.1103/Physrevb.37.2766  0.492
1988 Demuth JE, Lenen EJV, Tromp RM, Hamers RJ. Local electronic structure and surface geometry of Ag on Si(111) Journal of Vacuum Science & Technology B. 6: 18-25. DOI: 10.1116/1.584042  0.46
1988 Copel M, Tromp RM, Robey SW, Oehrlein GS. Medium energy ion scattering analysis of reactive ion etched Si(001) surfaces Applied Physics Letters. 53: 2317-2319. DOI: 10.1063/1.100265  0.461
1987 van Loenen EJ, Demuth JE, Tromp RM, Hamers RJ. Local electron states and surface geometry of Si(111)- sqrt 3 sqrt 3 Ag. Physical Review Letters. 58: 373-376. PMID 10034917 DOI: 10.1103/Physrevlett.58.373  0.338
1987 Demuth JE, Hamers RJ, Tromp RM. Summary Abstract: Imaging of surface atoms and their wave functions with the scanning tunneling microscope Journal of Vacuum Science & Technology B. 5: 1528-1529. DOI: 10.1116/1.583669  0.334
1987 Hamers RJ, Tromp RM, Demuth JE. Electronic and geometric structure of Si(111)-(7 × 7) and Si(001) surfaces Surface Science. 181: 346-355. DOI: 10.1016/0039-6028(87)90176-2  0.484
1986 Tromp RM, Hamers RJ, Demuth JE. Quantum States and atomic structure of silicon surfaces. Science (New York, N.Y.). 234: 304-9. PMID 17834527 DOI: 10.1126/Science.234.4774.304  0.467
1986 Hamers RJ, Tromp RM, Demuth JE. Scanning tunneling microscopy of Si(001). Physical Review. B, Condensed Matter. 34: 5343-5357. PMID 9940366 DOI: 10.1103/Physrevb.34.5343  0.443
1986 Tromp RM, Hamers RJ, Demuth JE. Atomic and electronic contributions to Si(111)-(7 x 7) scanning-tunneling-microscopy images. Physical Review. B, Condensed Matter. 34: 1388-1391. PMID 9939779 DOI: 10.1103/Physrevb.34.1388  0.408
1986 Demuth JE, Hamers RJ, Tromp RM. Atomic Imaging of Surface Defects on Si Materials Science Forum. 211-216. DOI: 10.4028/Www.Scientific.Net/Msf.10-12.211  0.441
1986 Demuth JE, Hamers RJ, Tromp RM. Scanning Tunneling Microscopy and Spectroscopy of Semiconductor Surfaces Mrs Proceedings. 77: 1. DOI: 10.1557/Proc-77-1  0.423
1986 Oehrlein GS, Coyle GJ, Tsang JC, Tromp RM, Clabes JG, Lee YH. Anisotropic Dry Etching of S1O2 on Si and its Impact on Surface and Near-Surface Properties of the Substrate. Mrs Proceedings. 68. DOI: 10.1557/Proc-68-367  0.485
1986 Demuth JE, Hamers RJ, Tromp RM, Welland ME. A scanning tunneling microscope for surface science studies Ibm Journal of Research and Development. 30: 396-402. DOI: 10.1147/Rd.304.0396  0.428
1986 Tromp RM, Rubloff GW, Loenen EJv. Low temperature material reaction at the Ti/Si(111) interface Journal of Vacuum Science and Technology. 4: 865-868. DOI: 10.1116/1.573797  0.373
1986 Rubloff GW, Tromp RM, Loenen EJv, Balk P, LeGoues FK. Summary Abstract: High temperature decomposition of SiO2 at the Si/SiO2 interface Journal of Vacuum Science and Technology. 4: 1024-1025. DOI: 10.1116/1.573446  0.395
1986 Rubloff GW, Tromp RM, Van Loenen EJ. Material reaction and silicide formation at the refractory metal/silicon interface Applied Physics Letters. 48: 1600-1602. DOI: 10.1063/1.96829  0.397
1986 Frenken JWM, Tromp RM, van der Veen JF. Theory and simulation of high-energy ion scattering experiments for structure analysis of surfaces and interfaces Nuclear Inst. and Methods in Physics Research, B. 17: 334-343. DOI: 10.1016/0168-583X(86)90122-9  0.574
1986 Demuth JE, Hamers RJ, Tromp RM, Welland ME. A simplified scanning tunneling microscope for surface science studies Journal of Vacuum Science and Technology. 4: 83-86. DOI: 10.1007/978-94-011-1812-5_9  0.429
1986 Hamers RJ, Tromp RM, Demuth JE. Surface Electronic Structure of Si(111)-(7 × 7) Resolved in Real Space Physical Review Letters. 56: 97-100. DOI: 10.1007/978-94-011-1812-5_12  0.483
1985 Tromp R, Rubloff GW, Balk P, LeGoues FK, van Loenen EJ. High-temperature SiO2 decomposition at the SiO2/Si interface. Physical Review Letters. 55: 2332-2335. PMID 10032113 DOI: 10.1103/Physrevlett.55.2332  0.392
1985 Tromp RM, Hamers RJ, Demuth JE. Si(001) Dimer structure observed with scanning tunneling microscopy. Physical Review Letters. 55: 1303-1306. PMID 10031782 DOI: 10.1103/Physrevlett.55.1303  0.452
1985 Smit L, Tromp RM, Veen JFvd. Ion beam crystallography of silicon surfaces III. Si(111)-(7 × 7) Surface Science. 155: 315-334. DOI: 10.1016/0039-6028(85)90009-3  0.442
1985 Tromp RM. Subsurface relaxations in Si(111)-(7 × 7) structure models Surface Science. 155: 432-440. DOI: 10.1016/0039-6028(85)90008-1  0.485
1984 Tromp RM, Loenen EJv. Structure study of Si(111)-(7×7) by channeling and blocking Physical Review B. 30: 7352-7354. DOI: 10.1103/Physrevb.30.7352  0.38
1984 Tromp RM, Smit L, Van Der Veen JF. Structure determination of the Si(111)-(2×1) surface with channeling and blocking Physical Review B. 30: 6235-6237. DOI: 10.1103/Physrevb.30.6235  0.637
1984 Himpsel FJ, Marcus PM, Tromp R, Batra IP, Cook MR, Jona F, Liu H. Structure analysis of Si(111)2 1 with low-energy electron diffraction Physical Review B. 30: 2257-2259. DOI: 10.1103/Physrevb.30.2257  0.418
1984 Smit L, Tromp RM, Van Der Veen JF. Ion-beam crystallography of the GaSb (110) surface Nuclear Inst. and Methods in Physics Research, B. 2: 322-325. DOI: 10.1016/0168-583X(84)90215-5  0.624
1984 Van Loenen EJ, Iwami M, Tromp RM, Van Der Veen JF. The adsorption of Ag on the Si(111) 7×7 surface at room temperature studied by medium energy ion scattering, LEED and AES Surface Science. 137: 1-22. DOI: 10.1016/0039-6028(84)90673-3  0.667
1983 Tromp RM, Smit L, Veen JFvd. Si(111)-(2×1) Surface: Buckling, Chains, or Molecules? Physical Review Letters. 51: 1672-1675. DOI: 10.1103/Physrevlett.51.2233.3  0.395
1983 Tromp RM, Van Loenen EJ, Iwami M, Smeenk RG, Saris FW, Nava F, Ottaviani G. The thermal stability of very thin Pd2Si films on Si Surface Science. 128: 224-236. DOI: 10.1016/S0039-6028(83)80028-4  0.646
1983 Iwami H, Tromp RM, Van Loenen EJ, Saris FW. Enhancement of damage creation at metal-silicon interfaces during H+ and He+ irradiation Physica B+C. 116: 328-331. DOI: 10.1016/0378-4363(83)90269-3  0.617
1983 Tromp RM, van der Veen JF. Monte carlo simulations of shadowing/blocking experiments for surface structure analysis Surface Science. 133: 159-170. DOI: 10.1016/0039-6028(83)90489-2  0.574
1983 Tromp RM, van Loenen EJ, Iwami M, Smeenk RG, Saris FW, Nava F, Ottaviani G. Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperature Surface Science. 124: 1-25. DOI: 10.1016/0039-6028(83)90332-1  0.629
1982 Tromp R, Van Loenen EJ, Iwami M, Smeenk R, Saris FW. ION BEAM CRYSTALLOGRAPHY OF METAL-SILICON INTERFACES: Pd-Si(111) Materials Research Society Symposia Proceedings. 10: 155-116. DOI: 10.1016/0040-6090(82)90100-6  0.644
1982 Tromp RM, van Loenen EJ, Iwami M, Saris FW. On the structure of the laser irradiated Si(111)-(1 × 1) surface Solid State Communications. 44: 971-974. DOI: 10.1016/0038-1098(82)90315-5  0.666
1982 Smeenk RG, Tromp RM, Kersten HH, Boerboom AJH, Saris FW. Angle resolved detection of charged particles with a novel type toroidal electrostatic analyser Nuclear Instruments and Methods. 195: 581-586. DOI: 10.1016/0029-554X(82)90022-2  0.519
1981 Tromp R, Loenen EJV, Iwami M, Smeenk R, Saris FW. Ion Beam Crystallography of Metal-Silicon Interfaces: Pd-Si(111) Mrs Proceedings. 10. DOI: 10.1557/Proc-10-155  0.449
1981 Tromp RM, Smeenk RG, Saris FW. Ion beam crystallography at the Si(100) surface Physical Review Letters. 46: 939-942. DOI: 10.1103/Physrevlett.46.939  0.641
1981 Smeenk RG, Tromp RM, Saris FW. Ion beam crystallography of the surface Surface Science Letters. 107. DOI: 10.1016/0167-2584(81)90253-X  0.37
1981 Smeenk RG, Tromp RM, Saris FW. Ion beam crystallography of the Ni(110)-(2 × 1)O surface Surface Science. 107: 429-438. DOI: 10.1016/0039-6028(81)90537-9  0.628
1981 Smeenk RG, Tromp RM, Frenken JWM, Saris FW. The oxidation of Ni(100) studied by medium energy ion scattering Surface Science. 112: 261-271. DOI: 10.1016/0039-6028(81)90374-5  0.576
1981 Tromp RM, Smeenk RG, Saris FW. Ion beam crystallography of silicon surfaces. I. Si(100)-(1 × 1) 2 H Surface Science. 104: 13-25. DOI: 10.1016/0039-6028(81)90120-5  0.64
1981 Tromp RM, Smeenk RG, Saris FW. The Si (100) surface: Symmetric or asymmetric dimers? Solid State Communications. 39: 755-758. DOI: 10.1016/0038-1098(81)90451-8  0.665
1980 Smeenk RG, Tromp RM, Van Der Veen JF, Saris FW. A quantitative ion-scattering study of the Ni(110) surface during the early stages of oxidation Surface Science. 95: 156-170. DOI: 10.1016/0039-6028(80)90133-8  0.708
1980 Van der Veen JF, Tromp RM, Smeenk RG, Saris FW. Calculation of channelling and blocking effects for ion beam surface crystallography Nuclear Instruments and Methods. 171: 143-148. DOI: 10.1016/0029-554X(80)90020-8  0.698
1979 van Der Veen JF, Tromp RM, Smeenk RG, Saris FW. Ion-beam crystallography of clean and sulfur covered Ni(110) Surface Science. 82: 468-480. DOI: 10.1016/0039-6028(79)90204-8  0.705
1979 Van Der Veen JF, Smeenk RG, Tromp RM, Saris FW. Relaxation effects and thermal vibrations in a Pt(111) surface measured by medium energy ion scattering Surface Science. 79: 219-230. DOI: 10.1016/0039-6028(79)90038-4  0.726
1979 Van Der Veen JF, Smeenk RG, Tromp RM, Saris FW. The effect of oxygen coverage on surface relaxation of Ni(110) measured by medium energy ion scattering Surface Science. 79: 212-218. DOI: 10.1016/0039-6028(79)90037-2  0.712
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