Year |
Citation |
Score |
1998 |
Tiller WA, Friedman M, Shaw R, Cuendet N, Halicioglu T. Grown-in point defects and microscopic defect formation in CZ silicon: I. The one-dimensional, steady-state approximation Journal of Crystal Growth. 186: 113-127. DOI: 10.1016/S0022-0248(97)00467-3 |
0.339 |
|
1995 |
Cuendet N, Halicioglu T, Tiller WA. Energetics of microvoid formation in Si from supersaturated vacancies Applied Physics Letters. 67: 1063. DOI: 10.1063/1.114465 |
0.369 |
|
1995 |
Uda S, Tiller WA. Microbubble formation during crystallization of LiNbO3 melts Journal of Crystal Growth. 152: 79-86. DOI: 10.1016/0022-0248(95)00084-4 |
0.329 |
|
1993 |
Ungar PJ, Takai T, Halicioglu T, Tiller WA. Point defect structures and energetics in Si using an empirical potential Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 224-230. DOI: 10.1116/1.578707 |
0.321 |
|
1993 |
Tiller WA, Uda S. Intrinsic LiNbO3 melt species partitioning at the congruent melt composition II. Dynamic interface case Journal of Crystal Growth. 129: 341-361. DOI: 10.1016/0022-0248(93)90464-8 |
0.339 |
|
1993 |
Uda S, Tiller WA. Cr migration associated with interface electric fields during transient LiNbO3 crystal growth Journal of Crystal Growth. 126: 396-412. DOI: 10.1016/0022-0248(93)90046-Y |
0.334 |
|
1992 |
Tiller WA. Fundamental aspects of film nucleation and growth in chemical vapor deposition Surface and Coatings Technology. 54: 211-218. DOI: 10.1016/S0257-8972(09)90052-4 |
0.316 |
|
1992 |
Uda S, Tiller WA. The influence of an interface electric field on the distribution coefficient of chromium in LiNbO3 Journal of Crystal Growth. 121: 93-110. DOI: 10.1016/0022-0248(92)90179-M |
0.318 |
|
1992 |
Yen CT, Tiller WA. Incorporating convection into one-dimensional solute redistribution during crystal growth from the melt I. The steady-state solution Journal of Crystal Growth. 118: 259-267. DOI: 10.1016/0022-0248(92)90070-Y |
0.334 |
|
1992 |
Yen CT, Tiller WA. Oxygen partitioning analysis during Czochralski silicon crystal growth via a dopant marker and a simple transfer function modeling technique II. Growth velocity and applied magnetic field transients Journal of Crystal Growth. 118: 85-92. DOI: 10.1016/0022-0248(92)90052-K |
0.33 |
|
1991 |
Yen CT, Tiller WA. Oxygen partitioning analysis during Czochralski silicon crystal growth via a dopant marker and a simple transfer function modeling technique I. Rotation rate transients Journal of Crystal Growth. 109: 142-148. DOI: 10.1016/0022-0248(91)90170-A |
0.345 |
|
1991 |
Tiller WA, Yen CT. Some consequences of a strong interface field-effect operating during the growth of TiO2-alloy crystals from the melt Journal of Crystal Growth. 109: 120-126. DOI: 10.1016/0022-0248(91)90166-3 |
0.341 |
|
1991 |
Yen CT, Tiller WA. Dynamic oxygen concentration in silicon melts during Czochralski crystal growth Journal of Crystal Growth. 113: 549-556. DOI: 10.1016/0022-0248(91)90090-R |
0.321 |
|
1991 |
Tiller WA. The role of ledges in stress tensor-mediated surface processes for Si and GaAs Metallurgical Transactions A. 22: 1317-1322. DOI: 10.1007/Bf02660664 |
0.336 |
|
1990 |
Ahn ST, Kennel HW, Plummer JD, Tiller WA. Reduction of lateral phosphorus diffusion in CMOS n-wells Ieee Transactions On Electron Devices. 37: 806-807. DOI: 10.1109/16.47790 |
0.305 |
|
1989 |
Ahn ST, Kennel HW, Tiller WA, Plummer JD. Vacancy supersaturation in Si under SiO2 caused by SiO formation during annealing in Ar Journal of Applied Physics. 65: 2957-2963. DOI: 10.1063/1.343412 |
0.328 |
|
1988 |
Tiller WA, Oh S. The effect of Frenkel defect formation on spherical SiO2 precipitate growth in silicon wafers Journal of Applied Physics. 64: 375-382. DOI: 10.1063/1.341437 |
0.373 |
|
1988 |
Hahn S, Ponce FA, Tiller WA, Stojanoff V, Bulla DAP, Castro WE. Effects of heavy boron doping upon oxygen precipitation in Czochralski silicon Journal of Applied Physics. 64: 4454-4465. DOI: 10.1063/1.341268 |
0.303 |
|
1988 |
Ahn ST, Kennel HW, Plummer JD, Tiller WA. Enhanced Sb diffusion in Si under thermal Si3N4 films during annealing in Ar Applied Physics Letters. 53: 1593-1595. DOI: 10.1063/1.100439 |
0.308 |
|
1988 |
Ahn ST, Kennel HW, Plummer JD, Tiller WA, Rek ZU, Stock SR. Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon Applied Physics Letters. 53: 34-36. DOI: 10.1063/1.100114 |
0.33 |
|
1987 |
Griffin PB, Ahn ST, Tiller WA, Plummer JD. Model for bulk effects on Si interstitial diffusivity in silicon Applied Physics Letters. 51: 115-117. DOI: 10.1063/1.98996 |
0.343 |
|
1987 |
Ahn ST, Griffin PB, Shott JD, Plummer JD, Tiller WA. A study of silicon interstitial kinetics using silicon membranes: Applications to 2D dopant diffusion Journal of Applied Physics. 62: 4745-4755. DOI: 10.1063/1.339028 |
0.32 |
|
1987 |
Pearson EM, Halicioglu T, Tiller WA. Long-range ledge-ledge interactions on Si(111) surfaces. I. No kinks or surface point defects Surface Science. 184: 401-424. DOI: 10.1016/S0039-6028(87)80366-7 |
0.316 |
|
1987 |
Pearson EM, Halicioglu T, Tiller WA. Kink-site formation energies on the Si(111) surface using a semiempirical potential energy function Journal of Crystal Growth. 83: 502-506. DOI: 10.1016/0022-0248(87)90244-2 |
0.315 |
|
1987 |
Pearson EM, Halicioglu T, Tiller WA. Adatom diffusion and adatom-ledge interaction on the Si(111) surface using a semiempirical potential energy function Journal of Crystal Growth. 83: 499-501. DOI: 10.1016/0022-0248(87)90243-0 |
0.344 |
|
1987 |
Bulla DAP, Castro WE, Stojanoff V, Ponce FA, Hahn S, Tiller WA. Effects of boron concentration upon oxygen precipitation in CZ silicon Journal of Crystal Growth. 85: 91-96. DOI: 10.1016/0022-0248(87)90208-9 |
0.324 |
|
1987 |
Balamane H, Halicioǧlu T, Tiller WA. Computer simulation of ledge formation and ledge interaction for the silicon (111) free surface Journal of Crystal Growth. 85: 16-24. DOI: 10.1016/0022-0248(87)90199-0 |
0.317 |
|
1986 |
Tiller WA, Hahn S, Ponce FA. Thermodynamic and kinetic considerations on the equilibrium shape for thermally induced microdefects in Czochralski silicon Journal of Applied Physics. 59: 3255-3266. DOI: 10.1063/1.336908 |
0.33 |
|
1986 |
Tiller WA. The role of strongly interface/surface adsorbed impurities on the purification process via crystallization methods Journal of Crystal Growth. 75: 132-137. DOI: 10.1016/0022-0248(86)90234-4 |
0.307 |
|
1986 |
Tiller WA. Thermodynamic and kinetic considerations for crystal growth of complex molecules from solution Journal of Crystal Growth. 76: 607-617. DOI: 10.1016/0022-0248(86)90178-8 |
0.332 |
|
1984 |
Pearson E, Takai T, Halicioglu T, Tiller WA. Computer modeling of Si and SiC surfaces and surface processes relevant to crystal growth from the vapor Journal of Crystal Growth. 70: 33-40. DOI: 10.1016/0022-0248(84)90244-6 |
0.328 |
|
1984 |
Tiller WA. Some unresolved theoretical problems in crystal growth Journal of Crystal Growth. 70: 13-23. DOI: 10.1016/0022-0248(84)90242-2 |
0.341 |
|
1984 |
Elwell D, Feigelson RS, Simkins MM, Tiller WA. Crystal growth of GaN by the reaction between gallium and ammonia Journal of Crystal Growth. 66: 45-54. DOI: 10.1016/0022-0248(84)90075-7 |
0.318 |
|
1980 |
Tiller WA, Ahn KS. Interface field effects on solute redistribution during crystallization Journal of Crystal Growth. 49: 483-501. DOI: 10.1016/0022-0248(80)90123-2 |
0.312 |
|
1977 |
Tiller WA. On the cross-pollenation of crystallization ideas between metallurgy and geology Physics and Chemistry of Minerals. 2: 125-151. DOI: 10.1007/Bf00307528 |
0.328 |
|
1968 |
O'Hara S, Tarshis LA, Tiller WA, Hunt JP. Discussion of interface stability of large facets on solution grown crystals Journal of Crystal Growth. 3: 555-561. DOI: 10.1016/0022-0248(68)90223-6 |
0.359 |
|
1968 |
Tiller WA. Theoretical analysis of requirements for crystal growth from solution Journal of Crystal Growth. 2: 69-79. DOI: 10.1016/0022-0248(68)90045-6 |
0.327 |
|
1968 |
Tiller WA, Kang C. On the growth rate of crystals from solution Journal of Crystal Growth. 2: 345-355. DOI: 10.1016/0022-0248(68)90027-4 |
0.326 |
|
1968 |
Kotler GR, Tiller WA. Stability of the needle crystal Journal of Crystal Growth. 2: 287-307. DOI: 10.1016/0022-0248(68)90017-1 |
0.311 |
|
1968 |
Donaghey LF, Tiller WA. On the diffusion of solute during the eutectoid and eutectic transformations, part I Materials Science and Engineering. 3: 231-239. |
0.636 |
|
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