| Year |
Citation |
Score |
| 2023 |
Dull JT, He X, Viereck J, Ai Q, Ramprasad R, Otani MC, Sorli J, Brandt JW, Carrow BP, Tinoco AD, Loo YL, Risko C, Rangan S, Kahn A, Rand BP. Thin-Film Organic Heteroepitaxy. Advanced Materials (Deerfield Beach, Fla.). e2302871. PMID 37394983 DOI: 10.1002/adma.202302871 |
0.303 |
|
| 2023 |
Hu J, Xu Z, Murrey TL, Pelczer I, Kahn A, Schwartz J, Rand BP. Triiodide Attacks The Organic Cation in Hybrid Lead Halide Perovskites: Mechanism, And Suppression. Advanced Materials (Deerfield Beach, Fla.). e2303373. PMID 37363828 DOI: 10.1002/adma.202303373 |
0.464 |
|
| 2023 |
Lungwitz D, Joy S, Mansour AE, Opitz A, Karunasena C, Li H, Panjwani NA, Moudgil K, Tang K, Behrends J, Barlow S, Marder SR, Brédas JL, Graham K, Koch N, ... Kahn A, et al. Spectral Signatures of a Negative Polaron in a Doped Polymer Semiconductor: Energy Levels and Hubbard Interactions. The Journal of Physical Chemistry Letters. 5633-5640. PMID 37310355 DOI: 10.1021/acs.jpclett.3c01022 |
0.458 |
|
| 2023 |
Xu Z, Astridge DD, Kerner RA, Zhong X, Hu J, Hong J, Wisch JA, Zhu K, Berry JJ, Kahn A, Sellinger A, Rand BP. Origins of Photoluminescence Instabilities at Halide Perovskite/Organic Hole Transport Layer Interfaces. Journal of the American Chemical Society. PMID 37202123 DOI: 10.1021/jacs.3c03539 |
0.309 |
|
| 2022 |
Smith HL, Dull JT, Mohapatra SK, Al Kurdi K, Barlow S, Marder SR, Rand BP, Kahn A. Powerful Organic Molecular Oxidants and Reductants Enable Ambipolar Injection in a Large-Gap Organic Homojunction Diode. Acs Applied Materials & Interfaces. PMID 34978787 DOI: 10.1021/acsami.1c21302 |
0.364 |
|
| 2021 |
Evans AM, Collins KA, Xun S, Allen TG, Jhulki S, Castano I, Smith HL, Strauss MJ, Oanta AK, Liu L, Sun L, Reid OG, Sini G, Puggioni D, Rondinelli JM, ... ... Kahn A, et al. Controlled n-Doping of Naphthalene Diimide-Based Two-Dimensional Polymers. Advanced Materials (Deerfield Beach, Fla.). e2101932. PMID 34850459 DOI: 10.1002/adma.202101932 |
0.326 |
|
| 2020 |
Zhang F, Hamill JC, Loo YL, Kahn A. Gap States in Methylammonium Lead Halides: The Link to Dimethylsulfoxide? Advanced Materials (Deerfield Beach, Fla.). e2003482. PMID 32885516 DOI: 10.1002/Adma.202003482 |
0.37 |
|
| 2020 |
Euvrard J, Revaux A, Kahn A, Vuillaume D. Photocurrent deviation from linearity in an organic photodetector due to limited hole transport layer conductivity Organic Electronics. 76: 105450. DOI: 10.1016/J.Orgel.2019.105450 |
0.377 |
|
| 2020 |
Silver S, Xun S, Li H, Brédas J, Kahn A. Structural and Electronic Impact of an Asymmetric Organic Ligand in Diammonium Lead Iodide Perovskites Advanced Energy Materials. 10: 1903900. DOI: 10.1002/Aenm.201903900 |
0.337 |
|
| 2020 |
Zhang F, Silver SH, Noel NK, Ullrich F, Rand BP, Kahn A. Ultraviolet Photoemission Spectroscopy and Kelvin Probe Measurements on Metal Halide Perovskites: Advantages and Pitfalls Advanced Energy Materials. 10: 1903252. DOI: 10.1002/Aenm.201903252 |
0.3 |
|
| 2020 |
Smith HL, Dull JT, Longhi E, Barlow S, Rand BP, Marder SR, Kahn A. n‐Doping of a Low‐Electron‐Affinity Polymer Used as an Electron‐Transport Layer in Organic Light‐Emitting Diodes Advanced Functional Materials. 30: 2000328. DOI: 10.1002/Adfm.202000328 |
0.318 |
|
| 2019 |
Einzinger M, Wu T, Kompalla JF, Smith HL, Perkinson CF, Nienhaus L, Wieghold S, Congreve DN, Kahn A, Bawendi MG, Baldo MA. Sensitization of silicon by singlet exciton fission in tetracene. Nature. 571: 90-94. PMID 31270480 DOI: 10.1038/S41586-019-1339-4 |
0.365 |
|
| 2019 |
Schulz P, Cahen D, Kahn A. Halide Perovskites: Is It All about the Interfaces? Chemical Reviews. PMID 30821958 DOI: 10.1021/Acs.Chemrev.8B00558 |
0.429 |
|
| 2019 |
Zhang F, Ullrich F, Silver SH, Kerner RA, Rand BP, Kahn A. Complexities of Contact Potential Difference Measurements on Metal Halide Perovskite Surfaces. The Journal of Physical Chemistry Letters. PMID 30739454 DOI: 10.1021/Acs.Jpclett.8B03878 |
0.383 |
|
| 2019 |
Noel NK, Habisreutinger SN, Pellaroque A, Pulvirenti F, Wenger B, Zhang F, Lin Y, Reid OG, Leisen J, Zhang Y, Barlow S, Marder SR, Kahn A, Snaith HJ, Arnold CB, et al. Interfacial charge-transfer doping of metal halide perovskites for high performance photovoltaics Energy & Environmental Science. 12: 3063-3073. DOI: 10.1039/C9Ee01773A |
0.387 |
|
| 2019 |
Zhang F, Klein C, Longhi E, Barlow S, Marder SR, Sarusi G, Kahn A. Molecular-Reductant-Induced Control of a Graphene–Organic Interface for Electron Injection Chemistry of Materials. 31: 6624-6632. DOI: 10.1021/Acs.Chemmater.9B00566 |
0.389 |
|
| 2019 |
Davy NC, Koch M, Ngongang Ndjawa GO, Lin X, Man GJ, Lin YL, Sorli JC, Rand BP, Kahn A, Scholes GD, Loo Y. High‐Voltage Photogeneration Exclusively via Aggregation‐Induced Triplet States in a Heavy‐Atom‐Free Nonplanar Organic Semiconductor Advanced Energy Materials. 9: 1901649. DOI: 10.1002/Aenm.201901649 |
0.725 |
|
| 2018 |
Lin X, Wegner B, Lee KM, Fusella MA, Zhang F, Moudgil K, Rand BP, Barlow S, Marder SR, Koch N, Kahn A. Erratum: Corrigendum: Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors. Nature Materials. 17: 204. PMID 31745271 DOI: 10.1038/Nmat5067 |
0.483 |
|
| 2018 |
Lin X, Wegner B, Lee KM, Fusella MA, Zhang F, Moudgil K, Rand BP, Barlow S, Marder SR, Koch N, Kahn A. Corrigendum: Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors. Nature Materials. 17: 204. PMID 29358767 DOI: 10.1038/nmat5067 |
0.426 |
|
| 2018 |
Lin YL, Zhang F, Kerner RA, Yang TC, Kahn A, Rand BP. Variable charge transfer state energies at nanostructured pentacene/C60 interfaces Applied Physics Letters. 112: 213302. DOI: 10.1063/1.5030885 |
0.377 |
|
| 2018 |
Euvrard J, Revaux A, Nobre SS, Kahn A, Vuillaume D. Toward a better understanding of the doping mechanism involved in Mo(tfd-COCF3)3 doped PBDTTT-c Journal of Applied Physics. 123: 225501. DOI: 10.1063/1.5029810 |
0.374 |
|
| 2018 |
Zohar A, Kulbak M, Levine I, Hodes G, Kahn A, Cahen D. What Limits the Open-Circuit Voltage of Bromide Perovskite-Based Solar Cells? Acs Energy Letters. 4: 1-7. DOI: 10.1021/Acsenergylett.8B01920 |
0.445 |
|
| 2018 |
Euvrard J, Revaux A, Cantarano A, Jacob S, Kahn A, Vuillaume D. Impact of unintentional oxygen doping on organic photodetectors Organic Electronics. 54: 64-71. DOI: 10.1016/J.Orgel.2017.12.008 |
0.391 |
|
| 2018 |
Euvrard J, Revaux A, Bayle PA, Bardet M, Vuillaume D, Kahn A. The formation of polymer-dopant aggregates as a possible origin of limited doping efficiency at high dopant concentration Organic Electronics. 53: 135-140. DOI: 10.1016/J.Orgel.2017.11.020 |
0.389 |
|
| 2018 |
Zhang F, Kahn A. Investigation of the high electron affinity molecular dopant f6-tcnnq for hole-transport materials Advanced Functional Materials. 28: 1703780. DOI: 10.1002/Adfm.201703780 |
0.424 |
|
| 2017 |
Lin X, Wegner B, Lee KM, Fusella MA, Zhang F, Moudgil K, Rand BP, Barlow S, Marder SR, Koch N, Kahn A. Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors. Nature Materials. 16: 1209-1215. PMID 29170548 DOI: 10.1038/Nmat5027 |
0.585 |
|
| 2017 |
Xiao Z, Zhao L, Tran N, Lin YL, Silver SH, Kerner RA, Yao N, Kahn A, Scholes GD, Rand BP. Mixed-halide perovskites with stabilized bandgaps. Nano Letters. PMID 28968126 DOI: 10.1021/Acs.Nanolett.7B03179 |
0.365 |
|
| 2017 |
Endres J, Kulbak M, Zhao L, Rand BP, Cahen D, Hodes G, Kahn A. Electronic structure of the CsPbBr3/polytriarylamine (PTAA) system Journal of Applied Physics. 121: 035304. DOI: 10.1063/1.4974471 |
0.446 |
|
| 2016 |
Schulz P, Tiepelt JO, Christians JA, Levine I, Edri E, Sanehira EM, Hodes G, Cahen D, Kahn A. High-Work-Function Molybdenum Oxide Hole Extraction Contacts in Hybrid Organic-Inorganic Perovskite Solar Cells. Acs Applied Materials & Interfaces. 8: 31491-31499. PMID 27933974 DOI: 10.1021/Acsami.6B10898 |
0.407 |
|
| 2016 |
Endres J, Egger DA, Kulbak M, Kerner RA, Zhao L, Silver SH, Hodes G, Rand BP, Cahen D, Kronik L, Kahn A. Valence and Conduction Band Densities of States of Metal Halide Perovskites: A Combined Experimental - Theoretical Study. The Journal of Physical Chemistry Letters. PMID 27364125 DOI: 10.1021/Acs.Jpclett.6B00946 |
0.373 |
|
| 2016 |
Guillain F, Endres J, Bourgeois L, Kahn A, Vignau L, Wantz G. Solution-processed p-dopant as interlayer in polymer solar cells. Acs Applied Materials & Interfaces. PMID 26958706 DOI: 10.1021/Acsami.6B00356 |
0.368 |
|
| 2016 |
Miller EM, Kroupa DM, Zhang J, Schulz P, Marshall AR, Kahn A, Lany S, Luther JM, Beard MC, Perkins CL, van de Lagemaat J. Revisiting the Valence and Conduction Band Size Dependence of PbS Quantum Dot Thin Films. Acs Nano. PMID 26895310 DOI: 10.1021/Acsnano.5B06833 |
0.345 |
|
| 2016 |
Herrbach J, Revaux A, Vuillaume D, Kahn A. P-doped organic semiconductor: Potential replacement for PEDOT:PSS in organic photodetectors Applied Physics Letters. 109: 73301. DOI: 10.1063/1.4961444 |
0.411 |
|
| 2016 |
Kahn A. Fermi level, work function and vacuum level Materials Horizons. 3: 7-10. DOI: 10.1039/C5Mh00160A |
0.448 |
|
| 2016 |
Lin X, Purdum GE, Zhang Y, Barlow S, Marder SR, Loo YL, Kahn A. Impact of a Low Concentration of Dopants on the Distribution of Gap States in a Molecular Semiconductor Chemistry of Materials. 28: 2677-2684. DOI: 10.1021/Acs.Chemmater.6B00165 |
0.357 |
|
| 2016 |
Davy NC, Man G, Kerner RA, Fusella MA, Purdum GE, Sezen M, Rand BP, Kahn A, Loo YL. Contorted Hexabenzocoronenes with Extended Heterocyclic Moieties Improve Visible-Light Absorption and Performance in Organic Solar Cells Chemistry of Materials. 28: 673-681. DOI: 10.1021/Acs.Chemmater.5B04503 |
0.751 |
|
| 2016 |
Endres J, Pelczer I, Rand BP, Kahn A. Determination of Energy Level Alignment within an Energy Cascade Organic Solar Cell Chemistry of Materials. 28: 794-801. DOI: 10.1021/Acs.Chemmater.5B03857 |
0.41 |
|
| 2016 |
Man G, Schwartz J, Sturm JC, Kahn A. Electronically Passivated Hole-Blocking Titanium Dioxide/Silicon Heterojunction for Hybrid Silicon Photovoltaics Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201600026 |
0.792 |
|
| 2016 |
Lin YHL, Fusella MA, Kozlov OV, Lin X, Kahn A, Pshenichnikov MS, Rand BP. Morphological Tuning of the Energetics in Singlet Fission Organic Solar Cells Advanced Functional Materials. 26: 6489-6494. DOI: 10.1002/Adfm.201601125 |
0.371 |
|
| 2015 |
Sahasrabudhe G, Rupich SM, Jhaveri J, Berg AH, Nagamatsu KA, Man G, Chabal YJ, Kahn A, Wagner S, Sturm JC, Schwartz J. Low-Temperature Synthesis of a TiO2/Si Heterojunction. Journal of the American Chemical Society. PMID 26579554 DOI: 10.1021/Jacs.5B09750 |
0.78 |
|
| 2015 |
Shallcross RC, Stubhan T, Ratcliff EL, Kahn A, Brabec CJ, Armstrong NR. Quantifying the Extent of Contact Doping at the Interface between High Work Function Electrical Contacts and Poly(3-hexylthiophene) (P3HT). The Journal of Physical Chemistry Letters. 6: 1303-9. PMID 26263127 DOI: 10.1021/Acs.Jpclett.5B00444 |
0.426 |
|
| 2015 |
Jhaveri J, Nagamatsu KA, Berg AH, Man G, Sahasrabudhe G, Wagner S, Schwartz J, Kahn A, Sturm JC. Double-heterojunction crystalline silicon solar cell with electron-selective TiO2 cathode contact fabricated at 100°C with open-circuit voltage of 640 mV 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356054 |
0.775 |
|
| 2015 |
Higgins A, Mohapatra SK, Barlow S, Marder SR, Kahn A. Dopant controlled trap-filling and conductivity enhancement in an electron-transport polymer Applied Physics Letters. 106. DOI: 10.1063/1.4918627 |
0.427 |
|
| 2015 |
Nagamatsu KA, Avasthi S, Sahasrabudhe G, Man G, Jhaveri J, Berg AH, Schwartz J, Kahn A, Wagner S, Sturm JC. Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell Applied Physics Letters. 106: 123906. DOI: 10.1063/1.4916540 |
0.789 |
|
| 2015 |
Macleod BA, Tremolet De Villers BJ, Schulz P, Ndione PF, Kim H, Giordano AJ, Zhu K, Marder SR, Graham S, Berry JJ, Kahn A, Olson DC. Stability of inverted organic solar cells with ZnO contact layers deposited from precursor solutions Energy and Environmental Science. 8: 592-601. DOI: 10.1039/C4Ee02488E |
0.381 |
|
| 2015 |
Hiszpanski AM, Saathoff JD, Shaw L, Wang H, Kraya L, Lüttich F, Brady MA, Chabinyc ML, Kahn A, Clancy P, Loo YL. Halogenation of a nonplanar molecular semiconductor to tune energy levels and bandgaps for electron transport Chemistry of Materials. 27: 1892-1900. DOI: 10.1021/Acs.Chemmater.5B00329 |
0.383 |
|
| 2015 |
Dai A, Wan A, Magee C, Zhang Y, Barlow S, Marder SR, Kahn A. Investigation of p-dopant diffusion in polymer films and bulk heterojunctions: Stable spatially-confined doping for all-solution processed solar cells Organic Electronics: Physics, Materials, Applications. 23: 151-157. DOI: 10.1016/J.Orgel.2015.04.023 |
0.686 |
|
| 2015 |
Schulz P, Whittaker-Brooks LL, Macleod BA, Olson DC, Loo YL, Kahn A. Electronic Level Alignment in Inverted Organometal Perovskite Solar Cells Advanced Materials Interfaces. 2. DOI: 10.1002/Admi.201400532 |
0.347 |
|
| 2015 |
Bouthinon B, Clerc R, Vaillant J, Verilhac JM, Faure-Vincent J, Djurado D, Ionica I, Man G, Gras A, Pananakakis G, Gwoziecki R, Kahn A. Impact of blend morphology on interface state recombination in bulk heterojunction organic solar cells Advanced Functional Materials. 25: 1090-1101. DOI: 10.1002/Adfm.201401633 |
0.753 |
|
| 2014 |
Ono LK, Schulz P, Endres JJ, Nikiforov GO, Kato Y, Kahn A, Qi Y. Air-Exposure-Induced Gas-Molecule Incorporation into Spiro-MeOTAD Films. The Journal of Physical Chemistry Letters. 5: 1374-9. PMID 26269982 DOI: 10.1021/Jz500414M |
0.402 |
|
| 2014 |
Barnea-Nehoshtan L, Nayak PK, Shu A, Bendikov T, Kahn A, Cahen D. Enhancing the tunability of the open-circuit voltage of hybrid photovoltaics with mixed molecular monolayers. Acs Applied Materials & Interfaces. 6: 2317-24. PMID 24467383 DOI: 10.1021/Am4056134 |
0.8 |
|
| 2014 |
Avasthi S, Nagamatsu KA, Jhaveri J, McClain WE, Man G, Kahn A, Schwartz J, Wagner S, Sturm JC. Double-heterojunction crystalline silicon solar cell fabricated at 250°C with 12.9 % efficiency 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 949-952. DOI: 10.1109/PVSC.2014.6925069 |
0.739 |
|
| 2014 |
Belasco J, Mohapatra SK, Zhang Y, Barlow S, Marder SR, Kahn A. Molecular doping and tuning threshold voltage in 6,13- bis(triisopropylsilylethynyl)pentacene/polymer blend transistors Applied Physics Letters. 105. DOI: 10.1063/1.4892809 |
0.765 |
|
| 2014 |
Schulz P, Edri E, Kirmayer S, Hodes G, Cahen D, Kahn A. Interface energetics in organo-metal halide perovskite-based photovoltaic cells Energy and Environmental Science. 7: 1377-1381. DOI: 10.1039/C4Ee00168K |
0.407 |
|
| 2014 |
Shu AL, McClain WE, Schwartz J, Kahn A. Interface dipole engineering at buried organic-organic semiconductor heterojunctions Organic Electronics: Physics, Materials, Applications. 15: 2360-2366. DOI: 10.1016/J.Orgel.2014.06.039 |
0.815 |
|
| 2014 |
Papadopoulos TA, Li H, Kim EG, Liu J, Cella JA, Heller CM, Shu A, Kahn A, Duggal A, Brédas JL. Impact of functionalized polystyrenes as the electron injection layer on gold and aluminum surfaces: A combined theoretical and experimental study Israel Journal of Chemistry. 54: 779-788. DOI: 10.1002/Ijch.201400041 |
0.806 |
|
| 2014 |
MacLeod BA, Schulz P, Cowan SR, Garcia A, Ginley DS, Kahn A, Olson DC. Improved performance in bulk heterojunction organic solar cells with a sol-gel MgZnO electron-collecting layer Advanced Energy Materials. 4. DOI: 10.1002/Aenm.201400073 |
0.384 |
|
| 2014 |
Widjonarko NE, Schulz P, Parilla PA, Perkins CL, Ndione PF, Sigdel AK, Olson DC, Ginley DS, Kahn A, Toney MF, Berry JJ. Impact of hole transport layer surface properties on the morphology of a polymer-fullerene bulk heterojunction Advanced Energy Materials. 4. DOI: 10.1002/Aenm.201301879 |
0.441 |
|
| 2014 |
Schulz P, Kelly LL, Winget P, Li H, Kim H, Ndione PF, Sigdel AK, Berry JJ, Graham S, Brédas JL, Kahn A, Monti OLA. Tailoring electron-transfer barriers for zinc oxide/C 60 fullerene interfaces Advanced Functional Materials. 24: 7381-7389. DOI: 10.1002/Adfm.201401794 |
0.477 |
|
| 2014 |
Cowan SR, Schulz P, Giordano AJ, Garcia A, Macleod BA, Marder SR, Kahn A, Ginley DS, Ratcliff EL, Olson DC. Chemically controlled reversible and irreversible extraction barriers Via stable interface modification of zinc oxide electron collection layer in polycarbazole-based organic solar cells Advanced Functional Materials. 24: 4671-4680. DOI: 10.1002/Adfm.201400158 |
0.472 |
|
| 2014 |
Dai A, Zhou Y, Shu AL, Mohapatra SK, Wang H, Fuentes-Hernandez C, Zhang Y, Barlow S, Loo YL, Marder SR, Kippelen B, Kahn A. Enhanced charge-carrier injection and collection via lamination of doped polymer layers p-doped with a solution-processible molybdenum complex Advanced Functional Materials. 24: 2197-2204. DOI: 10.1002/Adfm.201303232 |
0.787 |
|
| 2014 |
Schulz P, Cowan SR, Guan ZL, Garcia A, Olson DC, Kahn A. NiOX/MoO3 Bi-layers as efficient hole extraction contacts in organic solar cells Advanced Functional Materials. 24: 701-706. DOI: 10.1002/Adfm.201302477 |
0.407 |
|
| 2013 |
Naab BD, Guo S, Olthof S, Evans EGB, Wei P, Millhauser GL, Kahn A, Barlow S, Marder SR, Bao Z. Mechanistic study on the solution-phase n-doping of 1,3-dimethyl-2-aryl-2, 3-dihydro-1H-benzoimidazole derivatives Journal of the American Chemical Society. 135: 15018-15025. PMID 24011269 DOI: 10.1021/Ja403906D |
0.379 |
|
| 2013 |
Bussolotti F, Kera S, Kudo K, Kahn A, Ueno N. Gap states in pentacene thin film induced by inert gas exposure. Physical Review Letters. 110: 267602. PMID 23848923 DOI: 10.1103/Physrevlett.110.267602 |
0.327 |
|
| 2013 |
Matz DL, Ratcliff EL, Meyer J, Kahn A, Pemberton JE. Deciphering the metal-C60 interface in optoelectronic devices: evidence for C60 reduction by vapor deposited Al. Acs Applied Materials & Interfaces. 5: 6001-8. PMID 23734813 DOI: 10.1021/Am400640X |
0.369 |
|
| 2013 |
Sturm JC, Avasthi S, Nagamatsu K, Jhaveri J, McClain W, Man G, Kahn A, Schwartz J, Wagner S. Wide bandgap heterojunctions on crystalline silicon Ecs Transactions. 58: 97-105. DOI: 10.1149/05809.0097ecst |
0.745 |
|
| 2013 |
Jhaveri J, Avasthi S, Man G, McClain WE, Nagamatsu K, Kahn A, Schwartz J, Sturm JC. Hole-blocking crystalline-silicon/titanium-oxide heterojunction with very low interface recombination velocity Conference Record of the Ieee Photovoltaic Specialists Conference. 3292-3296. DOI: 10.1109/PVSC.2013.6745154 |
0.753 |
|
| 2013 |
Tietze ML, Tress W, Pfützner S, Schünemann C, Burtone L, Riede M, Leo K, Vandewal K, Olthof S, Schulz P, Kahn A. Correlation of open-circuit voltage and energy levels in zinc-phthalocyanine: C60 bulk heterojunction solar cells with varied mixing ratio Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.085119 |
0.363 |
|
| 2013 |
Avasthi S, McClain WE, Man G, Kahn A, Schwartz J, Sturm JC. Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics Applied Physics Letters. 102. DOI: 10.1063/1.4803446 |
0.786 |
|
| 2013 |
Nayak PK, Barnea-Nehoshtan L, Kim RS, Shu A, Man G, Kahn A, Lederman D, Feldman Y, Cahen D. The effect of structural order on solar cell parameters, as illustrated in a SiC-organic junction model Energy and Environmental Science. 6: 3272-3279. DOI: 10.1039/C3Ee42828A |
0.8 |
|
| 2013 |
Wang H, Gomez ED, Guan Z, Jaye C, Toney MF, Fischer DA, Kahn A, Loo YL. Tuning contact recombination and open-circuit voltage in polymer solar cells via self-assembled monolayer adsorption at the organic-metal oxide interface Journal of Physical Chemistry C. 117: 20474-20484. DOI: 10.1021/Jp406625E |
0.39 |
|
| 2013 |
Yaffe O, Pujari S, Sinai O, Vilan A, Zuilhof H, Kahn A, Kronik L, Cohen H, Cahen D. Effect of doping density on the charge rearrangement and interface dipole at the molecule-silicon interface Journal of Physical Chemistry C. 117: 22422-22427. DOI: 10.1021/Jp403177E |
0.412 |
|
| 2013 |
Steirer KX, Macdonald GA, Olthof S, Gantz J, Ratcliff EL, Kahn A, Armstrong NR. Energy level alignment and morphology of Ag and Au nanoparticle recombination contacts in tandem planar heterojunction solar cells Journal of Physical Chemistry C. 117: 22331-22340. DOI: 10.1021/Jp402672J |
0.405 |
|
| 2013 |
McClain WE, Florence PR, Shu A, Kahn A, Schwartz J. Surface dipole engineering for conducting polymers Organic Electronics: Physics, Materials, Applications. 14: 411-415. DOI: 10.1016/J.Orgel.2012.11.019 |
0.791 |
|
| 2013 |
Shu AL, Dai A, Wang H, Loo YL, Kahn A. Electronic structure and carrier transport at laminated polymer homojunctions Organic Electronics: Physics, Materials, Applications. 14: 149-155. DOI: 10.1016/J.Orgel.2012.09.023 |
0.807 |
|
| 2013 |
Papadopoulos TA, Meyer J, Li H, Guan Z, Kahn A, Brédas JL. Nature of the interfaces between stoichiometric and under-stoichiometric MoO3 and 4,4′-N,N′-dicarbazole-biphenyl: A combined theoretical and experimental study Advanced Functional Materials. 23: 6091-6099. DOI: 10.1002/Adfm.201301466 |
0.408 |
|
| 2013 |
Ren G, Schlenker CW, Ahmed E, Subramaniyan S, Olthof S, Kahn A, Ginger DS, Jenekhe SA. Photoinduced hole transfer becomes suppressed with diminished driving force in polymer-fullerene solar cells while electron transfer remains active Advanced Functional Materials. 23: 1238-1249. DOI: 10.1002/Adfm.201201470 |
0.312 |
|
| 2013 |
Kahn A, Koch N. Energy Levels at Molecule-Metal Interfaces The Molecule-Metal Interface. 219-241. DOI: 10.1002/9783527653171.ch8 |
0.427 |
|
| 2012 |
Olthof S, Mehraeen S, Mohapatra SK, Barlow S, Coropceanu V, Brédas JL, Marder SR, Kahn A. Ultralow doping in organic semiconductors: evidence of trap filling. Physical Review Letters. 109: 176601. PMID 23215211 DOI: 10.1103/Physrevlett.109.176601 |
0.426 |
|
| 2012 |
Meyer J, Hamwi S, Kröger M, Kowalsky W, Riedl T, Kahn A. Transition metal oxides for organic electronics: energetics, device physics and applications. Advanced Materials (Deerfield Beach, Fla.). 24: 5408-27. PMID 22945550 DOI: 10.1002/Adma.201201630 |
0.442 |
|
| 2012 |
Zhou Y, Fuentes-Hernandez C, Shim J, Meyer J, Giordano AJ, Li H, Winget P, Papadopoulos T, Cheun H, Kim J, Fenoll M, Dindar A, Haske W, Najafabadi E, Khan TM, ... ... Kahn A, et al. A universal method to produce low-work function electrodes for organic electronics. Science (New York, N.Y.). 336: 327-32. PMID 22517855 DOI: 10.1126/Science.1218829 |
0.396 |
|
| 2012 |
Guo S, Kim SB, Mohapatra SK, Qi Y, Sajoto T, Kahn A, Marder SR, Barlow S. n-Doping of organic electronic materials using air-stable organometallics. Advanced Materials (Deerfield Beach, Fla.). 24: 699-703. PMID 22057596 DOI: 10.1002/Adma.201103238 |
0.367 |
|
| 2012 |
Yaffe O, Qi Y, Scheres L, Puniredd SR, Segev L, Ely T, Haick H, Zuilhof H, Vilan A, Kronik L, Kahn A, Cahen D. Charge transport across metal/molecular (alkyl) monolayer-Si junctions is dominated by the LUMO level Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.045433 |
0.447 |
|
| 2012 |
Olthof S, Singh S, Mohapatra SK, Barlow S, Marder SR, Kippelen B, Kahn A. Passivation of trap states in unpurified and purified C60 and the influence on organic field-effect transistor performance Applied Physics Letters. 101. DOI: 10.1063/1.4772551 |
0.34 |
|
| 2012 |
Wilke A, Endres J, Hörmann U, Niederhausen J, Schlesinger R, Frisch J, Amsalem P, Wagner J, Gruber M, Opitz A, Vollmer A, Brütting W, Kahn A, Koch N. Correlation between interface energetics and open circuit voltage in organic photovoltaic cells Applied Physics Letters. 101. DOI: 10.1063/1.4769360 |
0.551 |
|
| 2012 |
Shim JW, Cheun H, Meyer J, Fuentes-Hernandez C, Dindar A, Zhou YH, Hwang DK, Kahn A, Kippelen B. Polyvinylpyrrolidone-modified indium tin oxide as an electron-collecting electrode for inverted polymer solar cells Applied Physics Letters. 101. DOI: 10.1063/1.4745772 |
0.369 |
|
| 2012 |
Qi Y, Mohapatra SK, Bok Kim S, Barlow S, Marder SR, Kahn A. Solution doping of organic semiconductors using air-stable n-dopants Applied Physics Letters. 100. DOI: 10.1063/1.3689760 |
0.419 |
|
| 2012 |
Hammond SR, Meyer J, Widjonarko NE, Ndione PF, Sigdel AK, Garcia A, Miedaner A, Lloyd MT, Kahn A, Ginley DS, Berry JJ, Olson DC. Low-temperature, solution-processed molybdenum oxide hole-collection layer for organic photovoltaics Journal of Materials Chemistry. 22: 3249-3254. DOI: 10.1039/C2Jm14911G |
0.42 |
|
| 2012 |
Nayak PK, Garcia-Belmonte G, Kahn A, Bisquert J, Cahen D. Photovoltaic efficiency limits and material disorder Energy and Environmental Science. 5: 6022-6039. DOI: 10.1039/C2Ee03178G |
0.362 |
|
| 2012 |
Shim JW, Zhou Y, Fuentes-Hernandez C, Dindar A, Guan Z, Cheun H, Kahn A, Kippelen B. Studies of the optimization of recombination layers for inverted tandem polymer solar cells Solar Energy Materials and Solar Cells. 107: 51-55. DOI: 10.1016/J.Solmat.2012.08.004 |
0.358 |
|
| 2012 |
Ratcliff EL, Meyer J, Steirer KX, Armstrong NR, Olson D, Kahn A. Energy level alignment in PCDTBT:PC 70BM solar cells: Solution processed NiO x for improved hole collection and efficiency Organic Electronics: Physics, Materials, Applications. 13: 744-749. DOI: 10.1016/J.Orgel.2012.01.022 |
0.458 |
|
| 2012 |
Cheun H, Fuentes-Hernandez C, Shim J, Fang Y, Cai Y, Li H, Sigdel AK, Meyer J, Maibach J, Dindar A, Zhou Y, Berry JJ, Bredas JL, Kahn A, Sandhage KH, et al. Oriented growth of Al 2O 3:ZnO nanolaminates for use as electron-selective electrodes in inverted polymer solar cells Advanced Functional Materials. 22: 1531-1538. DOI: 10.1002/Adfm.201102968 |
0.371 |
|
| 2011 |
Juárez R, Moreno Oliva M, Ramos M, Segura JL, Alemán C, Rodríguez-Ropero F, Curcó D, Montilla F, Coropceanu V, Brédas JL, Qi Y, Kahn A, Ruiz Delgado MC, Casado J, López Navarrete JT. Hexaazatriphenylene (HAT) versus tri-HAT: the bigger the better? Chemistry (Weinheim An Der Bergstrasse, Germany). 17: 10312-22. PMID 21850722 DOI: 10.1002/Chem.201101198 |
0.365 |
|
| 2011 |
Kim JB, Guan ZL, Shu AL, Kahn A, Loo YL. Annealing sequence dependent open-circuit voltage of inverted polymer solar cells attributable to interfacial chemical reaction between top electrodes and photoactive layers. Langmuir : the Acs Journal of Surfaces and Colloids. 27: 11265-71. PMID 21774546 DOI: 10.1021/La202178P |
0.787 |
|
| 2011 |
Meyer J, Khalandovsky R, Görrn P, Kahn A. MoO3 films spin-coated from a nanoparticle suspension for efficient hole-injection in organic electronics. Advanced Materials (Deerfield Beach, Fla.). 23: 70-3. PMID 20976830 DOI: 10.1002/Adma.201003065 |
0.346 |
|
| 2011 |
Guan Z, Bok Kim J, Loo Y, Kahn A. Electronic structure of the poly(3-hexylthiophene):indene-C60 bisadduct bulk heterojunction Journal of Applied Physics. 110: 043719. DOI: 10.1063/1.3626938 |
0.42 |
|
| 2011 |
Meyer J, Zilberberg K, Riedl T, Kahn A. Electronic structure of Vanadium pentoxide: An efficient hole injector for organic electronic materials Journal of Applied Physics. 110: 33710. DOI: 10.1063/1.3611392 |
0.446 |
|
| 2011 |
Ball JM, Bouwer RKM, Kooistra FB, Frost JM, Qi Y, Domingo EB, Smith J, De Leeuw DM, Hummelen JC, Nelson J, Kahn A, Stingelin N, Bradley DDC, Anthopoulos TD. Soluble fullerene derivatives: The effect of electronic structure on transistor performance and air stability Journal of Applied Physics. 110. DOI: 10.1063/1.3605531 |
0.409 |
|
| 2011 |
Malicki M, Heimel G, Guan ZL, Ha SD, Barlow S, Kahn A, Marder SR. Energy-level alignment in 4′-substituted stilbene-4-thiolate self-assembled monolayers on gold Journal of Physical Chemistry C. 115: 7487-7495. DOI: 10.1021/Jp111900G |
0.622 |
|
| 2011 |
Ratcliff EL, Meyer J, Steirer KX, Garcia A, Berry JJ, Ginley DS, Olson DC, Kahn A, Armstrong NR. Evidence for near-surface NiOOH species in solution-processed NiO x selective interlayer materials: Impact on energetics and the performance of polymer bulk heterojunction photovoltaics Chemistry of Materials. 23: 4988-5000. DOI: 10.1021/Cm202296P |
0.423 |
|
| 2011 |
Wang H, Gomez ED, Kim J, Guan Z, Jaye C, Fischer DA, Kahn A, Loo YL. Device characteristics of bulk-heterojunction polymer solar cells are independent of interfacial segregation of active layers Chemistry of Materials. 23: 2020-2023. DOI: 10.1021/Cm200320U |
0.365 |
|
| 2011 |
Avasthi S, Qi Y, Vertelov GK, Schwartz J, Kahn A, Sturm JC. Electronic structure and band alignment of 9,10-phenanthrenequinone passivated silicon surfaces Surface Science. 605: 1308-1312. DOI: 10.1016/J.Susc.2011.04.024 |
0.565 |
|
| 2011 |
Kim JB, Guan Z, Lee S, Pavlopoulou E, Toney MF, Kahn A, Loo Y. Modular construction of P3HT/PCBM planar-heterojunction solar cells by lamination allows elucidation of processing–structure–function relationships Organic Electronics. 12: 1963-1972. DOI: 10.1016/J.Orgel.2011.08.011 |
0.442 |
|
| 2011 |
Qi Y, Yaffe O, Tirosh E, Vilan A, Cahen D, Kahn A. Filled and empty states of alkanethiol monolayer on Au (1 1 1): Fermi level asymmetry and implications for electron transport Chemical Physics Letters. 511: 344-347. DOI: 10.1016/J.Cplett.2011.06.050 |
0.41 |
|
| 2011 |
Steirer KX, Ndione PF, Widjonarko NE, Lloyd MT, Meyer J, Ratcliff EL, Kahn A, Armstrong NR, Curtis CJ, Ginley DS, Berry JJ, Olson DC. Enhanced efficiency in plastic solar cells via energy matched solution processed NiO x interlayers Advanced Energy Materials. 1: 813-820. DOI: 10.1002/Aenm.201100234 |
0.437 |
|
| 2011 |
Zilberberg K, Trost S, Meyer J, Kahn A, Behrendt A, Lützenkirchen-Hecht D, Frahm R, Riedl T. Inverted Organic Solar Cells with Sol-Gel Processed High Work-Function Vanadium Oxide Hole-Extraction Layers Advanced Functional Materials. 21: 4776-4783. DOI: 10.1002/Adfm.201101402 |
0.339 |
|
| 2010 |
Vilan A, Yaffe O, Biller A, Salomon A, Kahn A, Cahen D. Molecules on si: electronics with chemistry. Advanced Materials (Deerfield Beach, Fla.). 22: 140-59. PMID 20217681 DOI: 10.1002/Adma.200901834 |
0.425 |
|
| 2010 |
Zhu X, Kahn A. Electronic Structure and Dynamics at Organic Donor/Acceptor Interfaces Mrs Bulletin. 35: 443-448. DOI: 10.1557/Mrs2010.582 |
0.412 |
|
| 2010 |
Ha SD, Meyer J, Kahn A. Molecular-scale properties of MoO3 -doped pentacene Physical Review B. 82: 155434. DOI: 10.1103/Physrevb.82.155434 |
0.577 |
|
| 2010 |
Zhao W, Qi Y, Sajoto T, Barlow S, Marder SR, Kahn A. Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering Applied Physics Letters. 97. DOI: 10.1063/1.3491429 |
0.469 |
|
| 2010 |
Meyer J, Schmidt H, Kowalsky W, Riedl T, Kahn A. The origin of low water vapor transmission rates through Al2 O3 / ZrO2 nanolaminate gas-diffusion barriers grown by atomic layer deposition Applied Physics Letters. 96. DOI: 10.1063/1.3455324 |
0.356 |
|
| 2010 |
Avasthi S, Qi Y, Vertelov GK, Schwartz J, Kahn A, Sturm JC. Silicon surface passivation by an organic overlayer of 9,10- phenanthrenequinone Applied Physics Letters. 96. DOI: 10.1063/1.3429585 |
0.566 |
|
| 2010 |
Meyer J, Kröger M, Hamwi S, Gnam F, Riedl T, Kowalsky W, Kahn A. Charge generation layers comprising transition metal-oxide/organic interfaces: Electronic structure and charge generation mechanism Applied Physics Letters. 96. DOI: 10.1063/1.3427430 |
0.442 |
|
| 2010 |
Meyer J, Shu A, Kröger M, Kahn A. Effect of contamination on the electronic structure and hole-injection properties of MoO3 /organic semiconductor interfaces Applied Physics Letters. 96. DOI: 10.1063/1.3374333 |
0.816 |
|
| 2010 |
Kim H, Guan ZL, Sun Q, Kahn A, Han J, Nurmikko A. Surface and interface states of gallium-polar versus nitrogen-polar GaN: Impact of thin organic semiconductor overlayers Journal of Applied Physics. 107. DOI: 10.1063/1.3372559 |
0.386 |
|
| 2010 |
Cahen D, Yaffe O, Scheres L, Segev L, Biller A, Ron I, Salomon E, Giesbers M, Kahn A, Kronik L, Zuilhof H, Vilan A. Hg/molecular monolayer-Si junctions: Electrical interplay between monolayer properties and semiconductor doping density Journal of Physical Chemistry C. 114: 10270-10279. DOI: 10.1021/Jp101656T |
0.432 |
|
| 2010 |
Qi Y, Sajoto T, Kröger M, Kandabarow AM, Park W, Barlow S, Kim EG, Wielunski L, Feldman LC, Bartynski RA, Brédas JL, Marder SR, Kahn A. A molybdenum dithiolene complex as p-dopant for hole-transport materials: A multitechnique experimental and theoretical investigation Chemistry of Materials. 22: 524-531. DOI: 10.1021/Cm9031623 |
0.387 |
|
| 2010 |
Kim D, Salman S, Coropceanu V, Salomon E, Padmaperuma AB, Sapochak LS, Kahn A, Brédas JL. Phosphine oxide derivatives as hosts for blue phosphors: A joint theoretical and experimental study of their electronic structure Chemistry of Materials. 22: 247-254. DOI: 10.1021/Cm9029616 |
0.377 |
|
| 2010 |
Guan ZL, Kim JB, Wang H, Jaye C, Fischer DA, Loo YL, Kahn A. Direct determination of the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester blend Organic Electronics: Physics, Materials, Applications. 11: 1779-1785. DOI: 10.1016/J.Orgel.2010.07.023 |
0.448 |
|
| 2010 |
Boudinet D, Benwadih M, Qi Y, Altazin S, Verilhac JM, Kroger M, Serbutoviez C, Gwoziecki R, Coppard R, Le Blevennec G, Kahn A, Horowitz G. Modification of gold source and drain electrodes by self-assembled monolayer in staggered n- and p-channel organic thin film transistors Organic Electronics: Physics, Materials, Applications. 11: 227-237. DOI: 10.1016/J.Orgel.2009.10.021 |
0.361 |
|
| 2010 |
Ha SD, Qi Y, Kahn A. Relative permittivity and Hubbard U of pentacene extracted from scanning tunneling microscopy studies of p-doped films Chemical Physics Letters. 495: 212-217. DOI: 10.1016/J.Cplett.2010.06.085 |
0.614 |
|
| 2010 |
Smith J, Hamilton R, Qi Y, Kahn A, Bradley DDC, Heeney M, McCulloch I, Anthopoulos TD. The influence of film morphology in high-mobility small-molecule: Polymer blend organic transistors Advanced Functional Materials. 20: 2330-2337. DOI: 10.1002/Adfm.201000427 |
0.411 |
|
| 2010 |
Hamwi S, Meyer J, Kröger M, Winkler T, Witte M, Riedl T, Kahn A, Kowalsky W. The role of transition metal oxides in chargegeneration layers for stacked organic light-emitting diodes Advanced Functional Materials. 20: 1762-1766. DOI: 10.1002/Adfm.201000301 |
0.434 |
|
| 2009 |
Qi Y, Sajoto T, Barlow S, Kim EG, Brédas JL, Marder SR, Kahn A. Use of a high electron-affinity molybdenum dithiolene complex to p-dope hole-transport layers. Journal of the American Chemical Society. 131: 12530-1. PMID 19678703 DOI: 10.1021/Ja904939G |
0.404 |
|
| 2009 |
Bräuer B, Grobosch M, Knupfer M, Weigend F, Vaynzof Y, Kahn A, Rüffer T, Salvan G. How photoelectron spectroscopy and quantum chemical studies can help understanding the magnetic properties of molecules: an example from the class of Cu(II)-bis(oxamato) complexes. The Journal of Physical Chemistry. B. 113: 10051-4. PMID 19572657 DOI: 10.1021/Jp9019552 |
0.335 |
|
| 2009 |
Malicki M, Guan Z, Ha SD, Heimel G, Barlow S, Rumi M, Kahn A, Marder SR. Preparation and characterization of 4'-donor substituted stilbene-4-thiolate monolayers and their influence on the work function of gold. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 7967-75. PMID 19419192 DOI: 10.1021/La9004104 |
0.617 |
|
| 2009 |
Bräuer B, Vaynzof Y, Zhao W, Kahn A, Li W, Zahn DR, Fernández Cde J, Sangregorio C, Salvan G. Electronic and magnetic properties of Ni nanoparticles embedded in various organic semiconductor matrices. The Journal of Physical Chemistry. B. 113: 4565-70. PMID 19338361 DOI: 10.1021/Jp809777Z |
0.337 |
|
| 2009 |
Ha SD, Kahn A. Isolated molecular dopants in pentacene observed by scanning tunneling microscopy Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.195410 |
0.585 |
|
| 2009 |
Häming M, Ziroff J, Salomon E, Seitz O, Cahen D, Kahn A, Schöll A, Reinert F, Umbach E. Electronic band structure and ensemble effect in monolayers of linear molecules investigated by photoelectron spectroscopy Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.155418 |
0.4 |
|
| 2009 |
Kröger M, Hamwi S, Meyer J, Riedl T, Kowalsky W, Kahn A. Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films Applied Physics Letters. 95. DOI: 10.1063/1.3231928 |
0.466 |
|
| 2009 |
Zhao W, Kahn A. Charge transfer at n-doped organic-organic heterojunctions Journal of Applied Physics. 105. DOI: 10.1063/1.3153962 |
0.531 |
|
| 2009 |
Chan CK, Zhao W, Kahn A, Hill IG. Influence of chemical doping on the performance of organic photovoltaic cells Applied Physics Letters. 94. DOI: 10.1063/1.3138131 |
0.747 |
|
| 2009 |
Shpaisman H, Salomon E, Nesher G, Vilan A, Cohen H, Kahn A, Cahen D. Electrical Transport and Photoemission Experiments of Alkylphosphonate Monolayers on GaAs The Journal of Physical Chemistry C. 113: 3313-3321. DOI: 10.1021/Jp808086D |
0.39 |
|
| 2009 |
Kröger M, Hamwi S, Meyer J, Riedl T, Kowalsky W, Kahn A. P-type doping of organic wide band gap materials by transition metal oxides: A case-study on Molybdenum trioxide Organic Electronics: Physics, Materials, Applications. 10: 932-938. DOI: 10.1016/J.Orgel.2009.05.007 |
0.456 |
|
| 2009 |
Hwang J, Wan A, Kahn A. Energetics of metal-organic interfaces: New experiments and assessment of the field Materials Science and Engineering R: Reports. 64: 1-31. DOI: 10.1016/J.Mser.2008.12.001 |
0.731 |
|
| 2009 |
Chan CK, Kahn A. N-doping of pentacene by decamethylcobaltocene Applied Physics a: Materials Science and Processing. 95: 7-13. DOI: 10.1007/S00339-008-4997-X |
0.627 |
|
| 2009 |
Fong HH, Papadimitratos A, Hwang J, Kahn A, Malliaras GG. Hole injection in a model fluorene-triarylamine copolymer Advanced Functional Materials. 19: 304-310. DOI: 10.1002/Adfm.200800738 |
0.403 |
|
| 2008 |
Tal O, Epstein I, Snir O, Roichman Y, Ganot Y, Chan CK, Kahn A, Tessler N, Rosenwaks Y. Measurements of the Einstein relation in doped and undoped molecular thin films Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.201201 |
0.601 |
|
| 2008 |
Zhao W, Salomon E, Zhang Q, Barlow S, Marder SR, Kahn A. Substrate-dependent electronic structure of an organic heterojunction Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.165336 |
0.504 |
|
| 2008 |
Ha SD, Zhang Q, Barlow S, Marder SR, Kahn A. Commensurate growth and diminishing substrate influence in a multilayer film of a tris(thieno)hexaazatriphenylene derivative on Au(111) studied by scanning tunneling microscopy Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.085433 |
0.612 |
|
| 2008 |
Vaynzof Y, Dennes TJ, Schwartz J, Kahn A. Enhancement of electron injection into a light-emitting polymer from an aluminum oxide cathode modified by a self-assembled monolayer Applied Physics Letters. 93. DOI: 10.1063/1.2980425 |
0.556 |
|
| 2008 |
Zhan X, Haldi A, Risko C, Chan CK, Zhao W, Timofeeva TV, Korlyukov A, Antipin MY, Montgomery S, Thompson E, An Z, Domercq B, Barlow S, Kahn A, Kippelen B, et al. Fluorenyl-substituted silole molecules: Geometric, electronic, optical, and device properties Journal of Materials Chemistry. 18: 3157-3166. DOI: 10.1039/B803470B |
0.618 |
|
| 2008 |
Salomon E, Zhang Q, Barlow S, Marder SR, Kahn A. Quasi-epitaxy of a Tris(thieno)hexaazatriphenylene Derivative Adsorbed on Ag(110): Structural and Electronic Properties Probed by Scanning Tunneling Microscopy The Journal of Physical Chemistry C. 112: 9803-9807. DOI: 10.1021/Jp800858U |
0.364 |
|
| 2008 |
Salomon E, Kahn A. One-dimensional organic nanostructures: A novel approach based on the selective adsorption of organic molecules on silicon nanowires Surface Science. 602: L79-L83. DOI: 10.1016/J.Susc.2008.04.023 |
0.366 |
|
| 2008 |
Salomon E, Zhang Q, Barlow S, Marder SR, Kahn A. Photoemission studies of interfaces between a tris(thieno)hexaazatriphenylene derivative and metals Organic Electronics: Physics, Materials, Applications. 9: 944-951. DOI: 10.1016/J.Orgel.2008.06.015 |
0.41 |
|
| 2008 |
Chan CK, Zhao W, Barlow S, Marder S, Kahn A. Decamethylcobaltocene as an efficient n-dopant in organic electronic materials and devices Organic Electronics: Physics, Materials, Applications. 9: 575-581. DOI: 10.1016/J.Orgel.2008.03.003 |
0.664 |
|
| 2008 |
Marmont P, Battaglini N, Lang P, Horowitz G, Hwang J, Kahn A, Amato C, Calas P. Improving charge injection in organic thin-film transistors with thiol-based self-assembled monolayers Organic Electronics: Physics, Materials, Applications. 9: 419-424. DOI: 10.1016/J.Orgel.2008.01.004 |
0.416 |
|
| 2008 |
Thieblemont F, Seitz O, Vilan A, Cohen H, Salomon E, Kahn A, Cahen D. Electronic current transport through molecular monolayers: Comparison between Hg/alkoxy and alkyl monolayer/Si(100) junctions Advanced Materials. 20: 3931-3936. DOI: 10.1002/Adma.200800659 |
0.431 |
|
| 2008 |
Seitz O, Vilan A, Cohen H, Hwang J, Haeming M, Schoell A, Umbach E, Kahn A, Cahen D. Doping molecular monolayers: Effects on electrical transport through alkyl chains on silicon Advanced Functional Materials. 18: 2102-2113. DOI: 10.1002/Adfm.200800208 |
0.437 |
|
| 2007 |
McDermott JE, McDowell M, Hill IG, Hwang J, Kahn A, Bernasek SL, Schwartz J. Organophosphonate self-assembled monolayers for gate dielectric surface modification of pentacene-based organic thin-film transistors: a comparative study. The Journal of Physical Chemistry. A. 111: 12333-8. PMID 17997528 DOI: 10.1021/Jp075177V |
0.699 |
|
| 2007 |
Seitz O, Vilan A, Cohen H, Chan C, Hwang J, Kahn A, Cahen D. Effect of doping on electronic transport through molecular monolayer junctions. Journal of the American Chemical Society. 129: 7494-5. PMID 17523646 DOI: 10.1021/Ja071960P |
0.578 |
|
| 2007 |
Barlow S, Zhang Q, Kaafarani BR, Risko C, Amy F, Chan CK, Domercq B, Starikova ZA, Antipin MY, Timofeeva TV, Kippelen B, Brédas JL, Kahn A, Marder SR. Synthesis, ionisation potentials and electron affinities of hexaazatrinaphthylene derivatives. Chemistry (Weinheim An Der Bergstrasse, Germany). 13: 3537-47. PMID 17226870 DOI: 10.1002/Chem.200601298 |
0.593 |
|
| 2007 |
Huby N, Hirsch L, Aubouy L, Gerbier P, Van Der Lee A, Amy F, Kahn A. Evidence of environmental strains on charge injection in silole-based organic light-emitting diodes Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.115416 |
0.398 |
|
| 2007 |
Chan CK, Kahn A, Zhang Q, Barlow S, Marder SR. Incorporation of cobaltocene as an n -dopant in organic molecular films Journal of Applied Physics. 102. DOI: 10.1063/1.2752145 |
0.626 |
|
| 2007 |
Hill IG, Hwang J, Kahn A, Huang C, McDermott JE, Schwartz J. Energy level alignment between 9-phosphonoanthracene self-assembled monolayers and pentacene Applied Physics Letters. 90. DOI: 10.1063/1.2426957 |
0.688 |
|
| 2007 |
Ha SD, Kaafarani BR, Barlow S, Marder SR, Kahn A. Multiphase growth and electronic structure of ultrathin hexaazatrinaphthylene on Au(111) Journal of Physical Chemistry C. 111: 10493-10497. DOI: 10.1021/Jp0718404 |
0.661 |
|
| 2007 |
Vázquez H, Flores F, Kahn A. Induced Density of States model for weakly-interacting organic semiconductor interfaces Organic Electronics: Physics, Materials, Applications. 8: 241-248. DOI: 10.1016/J.Orgel.2006.07.006 |
0.375 |
|
| 2007 |
Watkins NJ, Zangmeister CD, Chan CK, Zhao W, Ciszek JW, Tour JM, Kahn A, van Zee RD. Electron spectra of a self-assembled monolayer on gold: Inverse photoemission and two-photon photoemission spectroscopy Chemical Physics Letters. 446: 359-364. DOI: 10.1016/J.Cplett.2007.08.070 |
0.627 |
|
| 2007 |
Salomon A, Boecking T, Seitz O, Markus T, Amy F, Chan C, Zhao W, Cahen D, Kahn A. What is the barrier for tunneling through alkyl monolayers? Results from n- And p-Si-Alkyl/Hg junctions Advanced Materials. 19: 445-450. DOI: 10.1002/Adma.200601729 |
0.594 |
|
| 2006 |
Amy F, Chan CK, Zhao W, Hyung J, Ono M, Sueyoshi T, Kera S, Nesher G, Salomon A, Segev L, Seitz O, Shpaisman H, Schöll A, Haeming M, Böcking T, ... ... Kahn A, et al. Radiation damage to alkyl chain monolayers on semiconductor substrates investigated by electron spectroscopy. The Journal of Physical Chemistry. B. 110: 21826-32. PMID 17064146 DOI: 10.1021/Jp063614K |
0.624 |
|
| 2006 |
Nesher G, Vilan A, Cohen H, Cahen D, Amy F, Chan C, Hwang J, Kahn A. Energy level and band alignment for GaAs-alkylthiol monolayer-Hg junctions from electrical transport and photoemission experiments. The Journal of Physical Chemistry. B. 110: 14363-71. PMID 16854143 DOI: 10.1021/Jp062181I |
0.612 |
|
| 2006 |
Amy SR, Chabal YJ, Amy F, Kahn A, Krugg C, Kirsch P. Wet Chemical Cleaning of Germanium Surfaces for Growth of High-k Dielectrics Mrs Proceedings. 917. DOI: 10.1557/Proc-0917-E01-05 |
0.34 |
|
| 2006 |
Hwang J, Kahn A. Interface energetics of polyfluorene and fluorene-arylamine copolymers Proceedings of Spie. 6333: 633310. DOI: 10.1117/12.684787 |
0.441 |
|
| 2006 |
Segev L, Salomon A, Natan A, Cahen D, Kronik L, Amy F, Chan CK, Kahn A. Electronic structure of Si(111)-bound alkyl monolayers: Theory and experiment Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.165323 |
0.565 |
|
| 2006 |
Tal O, Rosenwaks Y, Roichman Y, Preezant Y, Tessler N, Chan CK, Kahn A. Threshold voltage as a measure of molecular level shift in organic thin-film transistors Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2167395 |
0.59 |
|
| 2006 |
Hwang J, Kim E, Liu J, Brédas J, Duggal A, Kahn A. Photoelectron Spectroscopic Study of the Electronic Band Structure of Polyfluorene and Fluorene-Arylamine Copolymers at Interfaces The Journal of Physical Chemistry C. 111: 1378-1384. DOI: 10.1021/Jp067004W |
0.441 |
|
| 2006 |
Hwang J, Amy F, Kahn A. Spectroscopic study on sputtered PEDOT · PSS: Role of surface PSS layer Organic Electronics: Physics, Materials, Applications. 7: 387-396. DOI: 10.1016/J.Orgel.2006.04.005 |
0.445 |
|
| 2006 |
Chan CK, Amy F, Zhang Q, Barlow S, Marder S, Kahn A. N-type doping of an electron-transport material by controlled gas-phase incorporation of cobaltocene Chemical Physics Letters. 431: 67-71. DOI: 10.1016/J.Cplett.2006.09.034 |
0.627 |
|
| 2006 |
Kahn A, Zhao W, Gao W, Vázquez H, Flores F. Doping-induced realignment of molecular levels at organic-organic heterojunctions Chemical Physics. 325: 129-137. DOI: 10.1016/J.Chemphys.2005.09.015 |
0.659 |
|
| 2006 |
Chan CK, Kim EG, Brédas JL, Kahn A. Molecular n-type doping of 1,4,5,8-naphthalene tetracarboxylic dianhydride by pyronin B studied using direct and inverse photoelectron spectroscopies Advanced Functional Materials. 16: 831-837. DOI: 10.1002/Adfm.200500402 |
0.614 |
|
| 2005 |
Haick H, Ghabboun J, Niitsoo O, Cohen H, Cahen D, Vilan A, Hwang J, Wan A, Amy F, Kahn A. Effect of molecular binding to a semiconductor on metal/molecule/semiconductor junction behavior. The Journal of Physical Chemistry. B. 109: 9622-30. PMID 16852158 DOI: 10.1021/Jp0504470 |
0.676 |
|
| 2005 |
Salomon A, Boecking T, Chan CK, Amy F, Girshevitz O, Cahen D, Kahn A. How do electronic carriers cross Si-bound alkyl monolayers? Physical Review Letters. 95: 266807. PMID 16486388 DOI: 10.1103/Physrevlett.95.266807 |
0.595 |
|
| 2005 |
Tal O, Rosenwaks Y, Preezant Y, Tessler N, Chan CK, Kahn A. Direct determination of the hole density of states in undoped and doped amorphous organic films with high lateral resolution. Physical Review Letters. 95: 256405. PMID 16384485 DOI: 10.1103/Physrevlett.95.256405 |
0.625 |
|
| 2005 |
Kaafarani BR, Kondo T, Yu J, Zhang Q, Dattilo D, Risko C, Jones SC, Barlow S, Domercq B, Amy F, Kahn A, Brédas JL, Kippelen B, Marder SR. High charge-carrier mobility in an amorphous hexaazatrinaphthylene derivative. Journal of the American Chemical Society. 127: 16358-9. PMID 16305198 DOI: 10.1021/Ja0553147 |
0.355 |
|
| 2005 |
Zhan X, Risko C, Amy F, Chan C, Zhao W, Barlow S, Kahn A, Brédas JL, Marder SR. Electron affinities of 1,1-diaryl-2,3,4,5-tetraphenylsiloles: direct measurements and comparison with experimental and theoretical estimates. Journal of the American Chemical Society. 127: 9021-9. PMID 15969579 DOI: 10.1021/Ja051139I |
0.604 |
|
| 2005 |
Tal O, Rosenwaks Y, Roichman Y, Tessler N, Chan CK, Kahn A. Nanoscale measurements of electronic properties in organic thin film transistors Materials Research Society Symposium Proceedings. 871: 126-131. DOI: 10.1557/Proc-871-I4.5 |
0.607 |
|
| 2005 |
Vázquez H, Gao W, Flores F, Kahn A. Energy level alignment at organic heterojunctions: Role of the charge neutrality level Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.041306 |
0.409 |
|
| 2005 |
Rivillon S, Chabal YJ, Amy F, Kahn A. Hydrogen passivation of germanium (100) surface using wet chemical preparation Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2142084 |
0.318 |
|
| 2005 |
Wang Y, Gao W, Braun S, Salaneck WR, Amy F, Chan C, Kahn A. Enhancement of iridium-based organic light-emitting diodes by spatial doping of the hole transport layer Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2117623 |
0.73 |
|
| 2005 |
Meloni S, Palma A, Kahn A, Schwartz J, Car R. Molecular and solid-state (8-hydroxy-quinoline)aluminum interaction with magnesium: A first-principles study Journal of Applied Physics. 98. DOI: 10.1063/1.1953869 |
0.486 |
|
| 2005 |
Hwang J, Kahn A. Electrical doping of poly(9,9-dioctylfluorenyl-2,7-diyl) with tetrafluorotetracyanoquinodimethane by solution method Journal of Applied Physics. 97. DOI: 10.1063/1.1895470 |
0.466 |
|
| 2005 |
Cahen D, Kahn A, Umbach E. Energetics of molecular interfaces Materials Today. 8: 32-41. DOI: 10.1016/S1369-7021(05)70985-8 |
0.426 |
|
| 2005 |
Amy F, Chan C, Kahn A. Polarization at the gold/pentacene interface Organic Electronics: Physics, Materials, Applications. 6: 85-91. DOI: 10.1016/J.Orgel.2005.03.003 |
0.644 |
|
| 2005 |
Wan A, Hwang J, Amy F, Kahn A. Impact of electrode contamination on the α-NPD/Au hole injection barrier Organic Electronics: Physics, Materials, Applications. 6: 47-54. DOI: 10.1016/J.Orgel.2005.02.003 |
0.701 |
|
| 2005 |
Koch N, Jäckel F, Ghijsen J, Rojas MC, Grioni M, Rabe JP, Johnson RL, Kahn A, Pireaux JJ. Observation of filled states at the Fermi-level in alkali-metal intercalated organic films: Dependence on substrate work function Journal of Electron Spectroscopy and Related Phenomena. 144: 495-498. DOI: 10.1016/J.Elspec.2005.01.016 |
0.65 |
|
| 2004 |
Vázquez H, Oszwaldowski R, Pou P, Ortega J, Pérez R, Flores F, Kahn A. Dipole formation at metal/PTCDA interfaces: Role of the Charge Neutrality Level Europhysics Letters. 65: 802-808. DOI: 10.1209/Epl/I2003-10131-2 |
0.41 |
|
| 2004 |
Wan A, Menon V, Forrest SR, Wasserman D, Lyon SA, Kahn A. Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 1893-1898. DOI: 10.1116/1.1774203 |
0.39 |
|
| 2004 |
Chan C, Gao W, Kahn A. Contact potential difference measurements of doped organic molecular thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 1488-1492. DOI: 10.1116/1.1688363 |
0.755 |
|
| 2004 |
Nickel B, Barabash R, Ruiz R, Koch N, Kahn A, Feldman LC, Haglund RF, Scoles G. Dislocation arrangements in pentacene thin films Physical Review B - Condensed Matter and Materials Physics. 70: 125401-1-125401-7. DOI: 10.1103/Physrevb.70.125401 |
0.475 |
|
| 2004 |
Kera S, Yabuuchi Y, Yamane H, Setoyama H, Okudaira KK, Kahn A, Ueno N. Impact of an interface dipole layer on molecular level alignment at an organic-conductor interface studied by ultraviolet photoemission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 70: 085304-1-085304-6. DOI: 10.1103/Physrevb.70.085304 |
0.403 |
|
| 2004 |
Tal O, Gao W, Chan CK, Kahn A, Rosenwaks Y. Measurement of interface potential change and space charge region across metal/organic/metal structures using Kelvin probe force microscopy Applied Physics Letters. 85: 4148-4150. DOI: 10.1063/1.1811805 |
0.59 |
|
| 2004 |
Amy F, Wan AS, Kahn A, Walker FJ, McKee RA. Band offsets at heterojunctions between SrTiO 3 and BaTiO 3 and Si(100) Journal of Applied Physics. 96: 1635-1639. DOI: 10.1063/1.1766417 |
0.695 |
|
| 2004 |
Amy F, Wan A, Kahn A, Walker FJ, McKee RA. Surface and interface chemical composition of thin epitaxial SrTiO 3 and BaTiO 3 films: Photoemission investigation Journal of Applied Physics. 96: 1601-1606. DOI: 10.1063/1.1765855 |
0.717 |
|
| 2004 |
Vázquez H, Flores F, Oszwaldowski R, Ortega J, Pérez R, Kahn A. Barrier formation at metal-organic interfaces: Dipole formation and the charge neutrality level Applied Surface Science. 234: 107-112. DOI: 10.1016/J.Apsusc.2004.05.084 |
0.432 |
|
| 2003 |
Ruiz R, Nickel B, Koch N, Feldman LC, Haglund RF, Kahn A, Family F, Scoles G. Dynamic scaling, island size distribution, and morphology in the aggregation regime of submonolayer pentacene films. Physical Review Letters. 91: 136102. PMID 14525320 DOI: 10.1103/Physrevlett.91.136102 |
0.47 |
|
| 2003 |
Meloni S, Palma A, Schwartz J, Kahn A, Car R. Chemistry between magnesium and multiple molecules in tris(8-hydroxyquinoline) aluminum films. Journal of the American Chemical Society. 125: 7808-9. PMID 12822992 DOI: 10.1021/Ja029090T |
0.45 |
|
| 2003 |
Dürr AC, Koch N, Kelsch M, Rühm A, Ghijsen J, Johnson RL, Pireaux JJ, Schwartz J, Schreiber F, Dosch H, Kahn A. Interplay between morphology, structure, and electronic properties at diindenoperylene-gold interfaces Physical Review B - Condensed Matter and Materials Physics. 68: 1154281-11542812. DOI: 10.1103/Physrevb.68.115428 |
0.64 |
|
| 2003 |
Dürr AC, Koch N, Kelsch M, Rühm A, Ghijsen J, Johnson RL, Pireaux J, Schwartz J, Schreiber F, Dosch H, Kahn A. Interplay between morphology, structure, and electronic properties at diindenoperylene-gold interfaces Physical Review B. 68. DOI: 10.1103/PHYSREVB.68.115428 |
0.476 |
|
| 2003 |
Koch N, Chan C, Kahn A, Schwartz J. Lack of thermodynamic equilibrium in conjugated organic molecular thin films Physical Review B - Condensed Matter and Materials Physics. 67: 1953301-1953305. DOI: 10.1103/Physrevb.67.195330 |
0.732 |
|
| 2003 |
Ruiz R, Nickel B, Koch N, Feldman LC, Haglund RF, Kahn A, Scoles G. Pentacene ultrathin film formation on reduced and oxidized Si surfaces Physical Review B - Condensed Matter and Materials Physics. 67: 1254061-1254067. DOI: 10.1103/Physrevb.67.125406 |
0.54 |
|
| 2003 |
Gao W, Kahn A. Electrical doping: The impact on interfaces of π-conjugated molecular films Journal of Physics Condensed Matter. 15: S2757-S2770. DOI: 10.1088/0953-8984/15/38/014 |
0.634 |
|
| 2003 |
Schwieger T, Knupfer M, Gao W, Kahn A. Direct and inverse photoemission spectroscopy studies of potassium intercalated films of two organic semiconductors Applied Physics Letters. 83: 500-502. DOI: 10.1063/1.1595151 |
0.646 |
|
| 2003 |
Gao W, Kahn A. Effect of electrical doping on molecular level alignment at organic-organic heterojunctions Applied Physics Letters. 82: 4815-4817. DOI: 10.1063/1.1585123 |
0.684 |
|
| 2003 |
Gao W, Kahn A. Controlled p doping of the hole-transport molecular material N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-di amine with tetrafluorotetracyanoquinodimethane Journal of Applied Physics. 94: 359-366. DOI: 10.1063/1.1577400 |
0.673 |
|
| 2003 |
Koch N, Elschner A, Schwartz J, Kahn A. Organic molecular films on gold versus conducting polymer: Influence of injection barrier height and morphology on current-voltage characteristics Applied Physics Letters. 82: 2281-2283. DOI: 10.1063/1.1565506 |
0.651 |
|
| 2003 |
Koch N, Kahn A, Ghijsen J, Pireaux JJ, Schwartz J, Johnson RL, Elschner A. Conjugated organic molecules on metal versus polymer electrodes: Demonstration of a key energy level alignment mechanism Applied Physics Letters. 82: 70-72. DOI: 10.1063/1.1532102 |
0.655 |
|
| 2003 |
Koch N, Dürr AC, Ghijsen J, Johnson RL, Pireaux JJ, Schwartz J, Schreiber F, Dosch H, Kahn A. Optically induced electron transfer from conjugated organic molecules to charged metal clusters Thin Solid Films. 441: 145-149. DOI: 10.1016/S0040-6090(03)00925-8 |
0.638 |
|
| 2003 |
Kahn A, Koch N, Gao W. Electronic structure and electrical properties of interfaces between metals and π-conjugated molecular films Journal of Polymer Science, Part B: Polymer Physics. 41: 2529-2548. DOI: 10.1002/Polb.10642 |
0.725 |
|
| 2003 |
Cahen D, Kahn A. Electron Energetics at Surfaces and Interfaces: Concepts and Experiments Advanced Materials. 15: 271-277. DOI: 10.1002/Adma.200390065 |
0.446 |
|
| 2003 |
Koch N, Nickel B, Ghijsen J, Elschner A, Schwartz J, Pireaux JJ, Kahn A. Metal vs. Polymer Electrodes in Organic Devices: Energy Level Alignment, Hole Injection, and Structure Materials Research Society Symposium - Proceedings. 771: 35-40. |
0.569 |
|
| 2002 |
Bruner EL, Koch N, Span AR, Bernasek SL, Kahn A, Schwartz J. Controlling the work function of indium tin oxide: differentiating dipolar from local surface effects. Journal of the American Chemical Society. 124: 3192-3. PMID 11916387 DOI: 10.1016/S0379-6779(02)01290-0 |
0.594 |
|
| 2002 |
Koch N, Ghijsen J, Ruiz R, Pflaum J, Johnson RL, Pireaux JJ, Schwartz J, Kahn A. Interaction and energy level alignment at interfaces between pentacene and low work function metals Materials Research Society Symposium - Proceedings. 708: 9-14. DOI: 10.1557/Proc-708-Bb2.4 |
0.663 |
|
| 2002 |
Koch N, Ghijsen J, Johnson RL, Schwartz J, Pireaux JJ, Kahn A. Physisorption-like interaction at the interfaces formed by pentacene and samarium Journal of Physical Chemistry B. 106: 4192-4196. DOI: 10.1021/Jp0135813 |
0.664 |
|
| 2002 |
Gao W, Kahn A. Electronic structure and current injection in zinc phthalocyanine doped with tetrafluorotetracyanoquinodimethane: Interface versus bulk effects Organic Electronics. 3: 53-63. DOI: 10.1016/S1566-1199(02)00033-2 |
0.673 |
|
| 2002 |
Pflaum J, Bracco G, Schreiber F, Colorado R, Shmakova OE, Lee TR, Scoles G, Kahn A. Structure and electronic properties of CH3- and CF3-terminated alkanethiol monolayers on Au(1 1 1): A scanning tunneling microscopy, surface X-ray and helium scattering study Surface Science. 498: 89-104. DOI: 10.1016/S0039-6028(01)01495-9 |
0.333 |
|
| 2002 |
Tsiper EV, Soos ZG, Gao W, Kahn A. Eletronic polarization at surfaces and thin films of organic molecular crystals: PTCDA Chemical Physics Letters. 360: 47-52. DOI: 10.1016/S0009-2614(02)00774-1 |
0.408 |
|
| 2001 |
Ruiz R, Feldman LC, Haglund RF, McKee RA, Koch N, Nickel BA, Pflaum J, Scoles G, Kahn A. Growth and morphology of pentacene films on oxide surfaces Mrs Proceedings. 708: 415-421. DOI: 10.1557/Proc-708-Bb10.54 |
0.491 |
|
| 2001 |
Gao W, Kahn A. Controlled p-doping of zinc phthalocyanine by coevaporation with tetrafluorotetracyanoquinodimethane: A direct and inverse photoemission study Applied Physics Letters. 79: 4040-4042. DOI: 10.1063/1.1424067 |
0.661 |
|
| 2001 |
Shen C, Kahn A, Schwartz J. Role of metal-molecule chemistry and interdiffusion on the electrical properties of an organic interface: The Al-F16CuPc case Journal of Applied Physics. 90: 6236-6242. DOI: 10.1063/1.1419263 |
0.65 |
|
| 2001 |
Shen C, Kahn A. Electronic structure, diffusion, andp-doping at the Au/F16CuPc interface Journal of Applied Physics. 90: 4549-4554. DOI: 10.1063/1.1406967 |
0.601 |
|
| 2001 |
Parthasarathy G, Shen C, Kahn A, Forrest SR. Lithium doping of semiconducting organic charge transport materials Journal of Applied Physics. 89: 4986-4992. DOI: 10.1063/1.1359161 |
0.452 |
|
| 2001 |
Shen C, Kahn A, Schwartz J. Chemical and electrical properties of interfaces between magnesium and aluminum and tris-(8-hydroxy quinoline) aluminum Journal of Applied Physics. 89: 449-459. DOI: 10.1063/1.1333740 |
0.63 |
|
| 2001 |
Bermudez VM, Wu C, Kahn A. AlN films on GaN: Sources of error in the photoemission measurement of electron affinity Journal of Applied Physics. 89: 1991. DOI: 10.1063/1.1333716 |
0.518 |
|
| 2001 |
Wu CI, Kahn A, Wickenden AE, Koleske D, Henry RL. Aluminum, magnesium, and gold contacts to contamination free n-GaN surfaces Journal of Applied Physics. 89: 425-429. DOI: 10.1063/1.1331653 |
0.581 |
|
| 2001 |
Shen C, Kahn A. The role of interface states in controlling the electronic structure of Alq3/reactive metal contacts Organic Electronics. 2: 89-95. DOI: 10.1016/S1566-1199(01)00015-5 |
0.573 |
|
| 2000 |
Milliron DJ, Hill IG, Shen C, Kahn A, Schwartz J. Surface oxidation activates indium tin oxide for hole injection Journal of Applied Physics. 87: 572-576. DOI: 10.1063/1.371901 |
0.723 |
|
| 2000 |
Shen C, Hill IG, Kahn A, Schwartz J. Organometallic chemistry at the magnesium-tris(8- hydroxyquinolino)aluminum interface [3] Journal of the American Chemical Society. 122: 5391-5392. DOI: 10.1021/Ja994265T |
0.715 |
|
| 2000 |
Hill IG, Schwartz J, Kahn A. Metal-dependent charge transfer and chemical interaction at interfaces between 3,4,9,10-perylenetetracarboxylic bisimidazole and gold, silver and magnesium Organic Electronics: Physics, Materials, Applications. 1: 5-13. DOI: 10.1016/S1566-1199(00)00002-1 |
0.712 |
|
| 2000 |
Hill IG, Milliron D, Schwartz J, Kahn A. Organic semiconductor interfaces: Electronic structure and transport properties Applied Surface Science. 166: 354-362. DOI: 10.1016/S0169-4332(00)00449-9 |
0.714 |
|
| 2000 |
Wu CI, Kahn A. Negative electron affinity and electron emission at cesiated GaN and AlN surfaces Applied Surface Science. 250-255. DOI: 10.1016/S0169-4332(00)00200-2 |
0.571 |
|
| 2000 |
Hill I, Kahn A, Cornil J, dos Santos D, Brédas J. Occupied and unoccupied electronic levels in organic π-conjugated molecules: comparison between experiment and theory Chemical Physics Letters. 317: 444-450. DOI: 10.1016/S0009-2614(99)01384-6 |
0.613 |
|
| 2000 |
Hill IG, Kahn A, Soos ZG, Pascal RA. Charge-separation energy in films of π -conjugated organic molecules Chemical Physics Letters. 327: 181-188. DOI: 10.1016/S0009-2614(00)00882-4 |
0.634 |
|
| 1999 |
Hill IG, Kahn A. Organic semiconductor heterointerfaces containing bathocuproine Journal of Applied Physics. 86: 4515-4519. DOI: 10.1063/1.371395 |
0.633 |
|
| 1999 |
Gu G, Parthasarathy G, Burrows PE, Tian P, Hill IG, Kahn A, Forrest SR. Transparent stacked organic light emitting devices. I. Design principles and transparent compound electrodes Journal of Applied Physics. 86: 4067-4075. DOI: 10.1063/1.371331 |
0.608 |
|
| 1999 |
Wu CI, Kahn A. Electronic states and effective negative electron affinity at cesiated p-GaN surfaces Journal of Applied Physics. 86: 3209-3212. DOI: 10.1063/1.371191 |
0.575 |
|
| 1999 |
Hill IG, Kahn A. Combined photoemission/in vacuo transport study of the indium tin oxide/copper phthalocyanine/N,N′-diphenyl-N,N′-bis(l-naphthyl)-1,1′biphenyl-4,4″diamine molecular organic semiconductor system Journal of Applied Physics. 86: 2116-2122. DOI: 10.1063/1.371018 |
0.625 |
|
| 1999 |
Chassé T, Wu C-, Hill IG, Kahn A. Band alignment at organic-inorganic semiconductor interfaces: α-NPD and CuPc on InP(110) Journal of Applied Physics. 85: 6589-6592. DOI: 10.1063/1.370165 |
0.736 |
|
| 1999 |
Wu CI, Kahn A. Negative electron affinity at the Cs/AlN(0001) surface Applied Physics Letters. 74: 1433-1435. DOI: 10.1063/1.123573 |
0.575 |
|
| 1999 |
Shen C, Hill IG, Kahn A. Role of Electrode Contamination in Electron Injection at Mg:Ag/Alq3 Interfaces Advanced Materials. 11: 1523-1527. DOI: 10.1002/(Sici)1521-4095(199912)11:18<1523::Aid-Adma1523>3.0.Co;2-K |
0.66 |
|
| 1998 |
Kendrick C, Kahn A. Growth of the Organic Molecular Semiconductor PTCDA on Se-Passivated GaAs(100):. An STM Study Surface Review and Letters. 5: 289-293. DOI: 10.1142/S0218625X98000530 |
0.412 |
|
| 1998 |
Kendrick C, Kahn A, Lay GL. Structural and Spectroscopic Investigation of the In-Terminated InAs(100) (4 × 2)/c(8 × 2) Reconstruction Surface Review and Letters. 5: 229-234. DOI: 10.1142/S0218625X98000426 |
0.322 |
|
| 1998 |
Wu CI, Kahn A. Investigation of the chemistry and electronic properties of metal/gallium nitride interfaces Journal of Vacuum Science & Technology B. 16: 2218-2223. DOI: 10.1116/1.590151 |
0.579 |
|
| 1998 |
Rajagopal A, Hill I, Kahn A. Electronic Properties of Metal-Organic Interfaces with Application to Electroluminescent Devices Molecular Crystals and Liquid Crystals Science and Technology. Section a. Molecular Crystals and Liquid Crystals. 322: 245-252. DOI: 10.1080/10587259808030231 |
0.668 |
|
| 1998 |
Hill IG, Kahn A. Energy level alignment at interfaces of organic semiconductor heterostructures Journal of Applied Physics. 84: 5583-5586. DOI: 10.1063/1.368864 |
0.648 |
|
| 1998 |
Hill IG, Rajagopal A, Kahn A. Energy-level alignment at interfaces between metals and the organic semiconductor 4,4′-N,N′-dicarbazolyl-biphenyl Journal of Applied Physics. 84: 3236-3241. DOI: 10.1063/1.368477 |
0.639 |
|
| 1998 |
Rajagopal A, Kahn A. Photoemission spectroscopy investigation of magnesium–Alq3 interfaces Journal of Applied Physics. 84: 355-358. DOI: 10.1063/1.368035 |
0.4 |
|
| 1998 |
Wu CI, Kahn A, Taskar N, Dorman D, Gallagher D. GaN (0001)-(1×1) surfaces: Composition and electronic properties Journal of Applied Physics. 83: 4249-4252. DOI: 10.1063/1.367182 |
0.597 |
|
| 1998 |
Rajagopal A, Wu CI, Kahn A. Energy level offset at organic semiconductor heterojunctions Journal of Applied Physics. 83: 2649-2655. DOI: 10.1063/1.367027 |
0.619 |
|
| 1998 |
Wu CI, Kahn A, Hellman ES, Buchanan DNE. Electron affinity at aluminum nitride surfaces Applied Physics Letters. 73: 1346-1348. DOI: 10.1063/1.122158 |
0.582 |
|
| 1998 |
Hill IG, Rajagopal A, Kahn A, Hu Y. Molecular level alignment at organic semiconductor-metal interfaces Applied Physics Letters. 73: 662-664. DOI: 10.1063/1.121940 |
0.663 |
|
| 1998 |
Kendrick C, Kahn A. Organic-inorganic interfaces: principles of quasi-epitaxy of a molecular semiconductor on inorganic compound semiconductors Applied Surface Science. 123: 405-411. DOI: 10.1016/S0169-4332(97)00468-6 |
0.411 |
|
| 1997 |
FineSmith RB, Roche K, Yellin PB, Walsh KK, Shen C, Zeglis M, Kahn A, Fish I. Effect of magnesium sulfate on the development of cystic periventricular leukomalacia in preterm infants. American Journal of Perinatology. 14: 303-7. PMID 9259949 DOI: 10.1055/s-2007-994149 |
0.341 |
|
| 1997 |
Sirringhaus H, Kahn A, Wagner S. Self-passivated copper gates for amorphous silicon thin film transistors Electronic Imaging. 3014: 62-69. DOI: 10.1117/12.270301 |
0.333 |
|
| 1997 |
Sirringhaus H, Theiss S, Kahn A, Wagner S. Self-passivated copper gates for amorphous silicon thin-film transistors Ieee Electron Device Letters. 18: 388-390. DOI: 10.1109/55.605448 |
0.316 |
|
| 1997 |
Ahsan S, Kahn A, Pashley MD. Investigation of the early stages of ZnSe epitaxy on GaAs(001) via scanning tunneling microscopy Applied Physics Letters. 71: 2178-2180. DOI: 10.1063/1.119373 |
0.338 |
|
| 1997 |
Wu CC, Wu CI, Sturm JC, Kahn A. Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices Applied Physics Letters. 70: 1348-1350. DOI: 10.1063/1.118575 |
0.357 |
|
| 1997 |
Hirose Y, Wu CI, Aristov V, Soukiassian P, Kahn A. Chemistry and electronic properties of metal contacts on an organic molecular semiconductor Applied Surface Science. 113114: 291-298. DOI: 10.1016/S0169-4332(96)00886-0 |
0.623 |
|
| 1997 |
Yu D, Kahn A, Cavus A, Tamargo M. Structural and electronic properties of the Zn0.5Cd0.5Se(100) surface Surface Science. 373: 350-356. DOI: 10.1016/S0039-6028(96)01159-4 |
0.357 |
|
| 1997 |
Kendrick C, Kahn A. Epitaxial growth and phase transition in multilayers of the organic semiconductor PTCDA on InAs(0 0 1) Journal of Crystal Growth. 181: 181-192. DOI: 10.1016/S0022-0248(97)00285-6 |
0.367 |
|
| 1997 |
Wu C, Hirose Y, Sirringhaus H, Kahn A. Electron-hole interaction energy in the organic molecular semiconductor PTCDA Chemical Physics Letters. 272: 43-47. DOI: 10.1016/S0009-2614(97)00481-8 |
0.581 |
|
| 1996 |
Kendrick C, LeLay G, Kahn A. Bias-dependent imaging of the In-terminated InAs(001) (4 x 2)/c(8 x 2) surface by STM: Reconstruction and transitional defect. Physical Review B. 54: 17877-17883. PMID 9985920 DOI: 10.1103/Physrevb.54.17877 |
0.364 |
|
| 1996 |
Hirose Y, Kahn A, Aristov V, Soukiassian P, Bulovic V, Forrest SR. Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA. Physical Review. B, Condensed Matter. 54: 13748-13758. PMID 9985292 DOI: 10.1103/Physrevb.54.13748 |
0.42 |
|
| 1996 |
Hirose Y, Kahn A, Aristov V, Soukiassian P. Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride Applied Physics Letters. 68: 217-219. DOI: 10.1063/1.116465 |
0.421 |
|
| 1996 |
Kendrick C, Kahn A, Forrest SR. STM study of the organic semiconductor PTCDA on highly-oriented pyrolytic graphite Applied Surface Science. 104: 586-594. DOI: 10.1016/S0169-4332(96)00207-3 |
0.393 |
|
| 1995 |
Lazarides AA, Duke CB, Paton A, Kahn A. Determination of the surface atomic geometry of PbTe(100) by dynamical low-energy electron-diffraction intensity analysis. Physical Review. B, Condensed Matter. 52: 14895-14905. PMID 9980829 DOI: 10.1103/Physrevb.52.14895 |
0.328 |
|
| 1995 |
Hirose Y, Forrest SR, Kahn A. Quasiepitaxial growth of the organic molecular semiconductor 3,4,9,10-perylenetetracarboxylic dianhydride. Physical Review. B, Condensed Matter. 52: 14040-14047. PMID 9980621 DOI: 10.1103/Physrevb.52.14040 |
0.397 |
|
| 1995 |
Chen W, Kahn A, Soukiassian P, Mangat PS, Gaines J, Ponzoni C, Olego D. Chemistry at the Al- and Au-ZnSe(100) interfaces. Physical Review. B, Condensed Matter. 51: 14265-14270. PMID 9978354 DOI: 10.1103/Physrevb.51.14265 |
0.383 |
|
| 1995 |
Lazarides AA, Kahn A, Duke CB, Paton A. Surface relaxation of PbTe(100) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1378-1381. DOI: 10.1116/1.579567 |
0.358 |
|
| 1995 |
Hirose Y, Forrest SR, Kahn A. Ordered, quasiepitaxial growth of an organic thin film on Se‐passivated GaAs(100) Applied Physics Letters. 66: 944-946. DOI: 10.1063/1.113605 |
0.427 |
|
| 1994 |
Chen W, Kahn A, Soukiassian P, Mangat PS, Gaines J, Ponzoni C, Olego D. ZnSe(100) surface: Atomic configurations, composition, and surface dipole. Physical Review. B, Condensed Matter. 49: 10790-10793. PMID 10009918 DOI: 10.1103/Physrevb.49.10790 |
0.349 |
|
| 1994 |
Hirose Y, Chen W, Haskal EI, Forrest SR, Kahn A. Band lineup at an organic‐inorganic semiconductor heterointerface: perylenetetracarboxylic dianhydride/GaAs(100) Applied Physics Letters. 64: 3482-3484. DOI: 10.1063/1.111247 |
0.416 |
|
| 1994 |
Kahn A. Thirty years of atomic and electronic structure determination of surfaces of tetrahedrally coordinated compound semiconductors Surface Science. 299: 469-486. DOI: 10.1016/0039-6028(94)90676-9 |
0.349 |
|
| 1993 |
Lessor DL, Duke CB, Kahn A, Ford WK. Ionicity Dependence of Surface Bond Lengths on the (110) Cleavage Faces of Isoelectronic Zincblende Structure Compound Semiconductors: GaP, ZnS, and CuCl Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 2205-2209. DOI: 10.1116/1.578393 |
0.335 |
|
| 1993 |
Chen W, Mao D, Santos M, Shayegan M, Kahn A, Mangat PS, Soukiassian P, Florez LT, Harbison JP. Schottky barrier formation at nonreactive interfaces : Ga/GaAs(100) and Pb/GaAs(100) Journal of Vacuum Science and Technology. 11: 854-859. DOI: 10.1116/1.578317 |
0.38 |
|
| 1992 |
Kahn A, Ahsan S, Chen W, Dumas M, Duke CB, Paton A. Determinants of surface atomic geometry: The CuCl(110) test case. Physical Review Letters. 68: 3200-3203. PMID 10045639 DOI: 10.1103/Physrevlett.68.3200 |
0.329 |
|
| 1992 |
Mao D, Santos M, Shayegan M, Kahn A, Le Lay G, Hwu Y, Margaritondo G, Florez LT, Harbison JP. Formation of interfaces between In and Au and GaAs(100) studied with soft-x-ray photoemission spectroscopy. Physical Review. B, Condensed Matter. 45: 1273-1283. PMID 10001605 DOI: 10.1103/Physrevb.45.1273 |
0.437 |
|
| 1992 |
Chen W, Duke CB, Dumas M, Ahsan S, Kahn A, Paton A. Epitaxial growth and characterization of CuCI(110)/GaP(110) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 2071-2076. DOI: 10.1116/1.578027 |
0.438 |
|
| 1992 |
Hirose Y, Horng S, Kahn A, Wrenn C, Pfeffer R. Electron beam patterning of epitaxial CaF2 and Ca0.5Sr0.5F2/(100)GaAs Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 10: 960-964. DOI: 10.1116/1.577886 |
0.333 |
|
| 1992 |
Doukkali A, Bonnet JJ, Soonckindt L, Mao D, Kahn A. Morphology of the Ag GaSb (110) interface : a study by quantitative AES Journal De Physique Iii. 2: 275-285. DOI: 10.1051/Jp3:1992126 |
0.311 |
|
| 1992 |
Horng S, Hirose Y, Kahn A, Wrenn C, Pfeffer R. Ca0.5Sr0.5F2/GaAs (100) for epitaxial regrowth and electron-beam patterning Applied Surface Science. 855-860. DOI: 10.1016/0169-4332(92)90350-7 |
0.354 |
|
| 1992 |
Hricovini K, Lay GL, Kahn A, Taleb-Ibrahimi A, Bonnet JE. Initial stages of Schottky-barrier formation of Bi/Si(111) and Bi/Si(100) interfaces Applied Surface Science. 259-263. DOI: 10.1016/0169-4332(92)90244-R |
0.358 |
|
| 1992 |
Mao D, Kahn A, Lay GL, Marsi M, Hwu Y, Margaritondo G. Kelvin Probe And Synchrotron Radiation Study Of Surface Photovoltage And Band Bending At Metal Gaas (100) Interfaces Applied Surface Science. 142-150. DOI: 10.1016/0169-4332(92)90227-O |
0.361 |
|
| 1992 |
Dumas M, Nouaoura M, Bertru N, Lassabatère L, Chen W, Kahn A. Sb-capping and decapping of MBE-grown GaSb(100) Surface Science. 262: L91-L95. DOI: 10.1016/0039-6028(92)90114-L |
0.404 |
|
| 1991 |
Kahn A, Duke CB, Wang YR. Atomic structure of the CdS(112-bar0) surface: A dynamical analysis of low-energy electron-diffraction intensities. Physical Review. B, Condensed Matter. 44: 5606-5615. PMID 9998400 DOI: 10.1103/Physrevb.44.5606 |
0.312 |
|
| 1991 |
Lay GL, Mao D, Kahn A, Hwu Y, Margaritondo G. High-Resolution Synchrotron-Radiation Core-Level Spectroscopy of Decapped Gaas(100) Surfaces Physical Review B. 43: 14301-14304. PMID 9997315 DOI: 10.1103/Physrevb.43.14301 |
0.355 |
|
| 1991 |
Horng S, Hirose Y, Kahn A, Wrenn C, Pfeffer R. Growth of GaAs / Ca0.5Sr0 5F2 / (100) GaAs by Molecular Beam Epitaxy Mrs Proceedings. 221. DOI: 10.1557/Proc-221-175 |
0.33 |
|
| 1991 |
Mao D, Kahn A, Lay GL, Marsi M, Hwu Y, Margaritondo G, Santos M, Shayegan M, Florez LT, Harbison JP. Surface Photovoltage and Band Bending at Metal Gaas Interfaces - a Contact Potential Difference and Photoemission Spectroscopy Study Journal of Vacuum Science & Technology B. 9: 2083-2089. DOI: 10.1116/1.585779 |
0.375 |
|
| 1991 |
Mao D, Kahn A, Marsi M, Margaritondo G. Coverage dependent surface photovoltage induced by synchrotron radiation at metal/GaAs interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 898-901. DOI: 10.1116/1.577337 |
0.384 |
|
| 1991 |
Horng S, Kahn A, Wrenn C, Pfeffer R. Growth of GaAs/Ca0.45Sr0.55F2/GaAs structures by molecular beam epitaxy Materials Science and Engineering: B. 9: 263-267. DOI: 10.1016/0921-5107(91)90184-W |
0.348 |
|
| 1991 |
Mao D, Kahn A, Marsi M, Margaritondo G. Synchrotron radiation induced surface photovoltage at metal/GaAs interfaces Applied Surface Science. 324-331. DOI: 10.1016/0169-4332(91)90352-K |
0.381 |
|
| 1991 |
Hricovini K, Lay GL, Kahn A, Taleb-Ibrahimi A, Bonnet JE, Lassabatère L, Dumas M. Structure effects on Schottky barrier heights of Pb/Si and Bi/Si interfaces Surface Science. 251: 424-427. DOI: 10.1016/0039-6028(91)91027-U |
0.386 |
|
| 1990 |
Stevens K, Soonckindt L, Kahn A. Adsorption geometry and overlayer morphology in the formation of interfaces between metals and (110) III–V surfaces Journal of Vacuum Science and Technology. 8: 2068-2073. DOI: 10.1116/1.577004 |
0.397 |
|
| 1990 |
Mao D, Soonckindt L, Kahn A, Terrasi A, Margaritondo G. Synchrotron radiation photoemission study of the formation of the Ag/GaSb(110) interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 1983-1987. DOI: 10.1116/1.576792 |
0.316 |
|
| 1990 |
Mao D, Kahn A, Marsi M, Margaritondo G. Synchrotron-radiation-induced surface photovoltage on GaAs studied by contact-potential-difference measurements Physical Review B. 42: 3228-3230. DOI: 10.1103/Physrevb.42.3228 |
0.347 |
|
| 1989 |
Stiles K, Kahn A. Stiles and Kahn reply. Physical Review Letters. 62: 606. PMID 10040280 DOI: 10.1103/Physrevlett.62.606 |
0.314 |
|
| 1989 |
Mao D, Young K, Kahn A, Zanoni R, McKinley J, Margaritondo G. Photoemission study of CaF2- and SrF2-GaAs(110) interfaces formed at room temperature. Physical Review B. 39: 12735-12742. PMID 9948144 DOI: 10.1103/Physrevb.39.12735 |
0.316 |
|
| 1989 |
Mao D, Young K, Stiles K, Kahn A. Formation of the Ca/GaAs(110) interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 744-748. DOI: 10.1116/1.575832 |
0.389 |
|
| 1989 |
Lin B, Kahn A. Elastic electron fine structure: First principle calculation Surface Science. 216: 160-172. DOI: 10.1016/0039-6028(89)90650-X |
0.326 |
|
| 1989 |
Kahn A, Stiles K, Mao D, Horng SF, Young K, McKinley J, Kilday DG, Margaritondo G. Formation of schottky barriers on GaAs(110): from adsorbate-induced Gap states to interface metallicity Journal of Electronic Materials. 18: 33-37. DOI: 10.1007/Bf02655341 |
0.4 |
|
| 1988 |
Stiles K, Kahn A. Correlation between EF pinning and development of metallic character in Ag overlayers on GaAs(110). Physical Review Letters. 60: 440-443. PMID 10038547 DOI: 10.1103/Physrevlett.60.440 |
0.326 |
|
| 1988 |
Stiles K, Kahn A, Kilday D, McKinley J, Margaritondo G. EF pinning at the Sn/GaAs(110) interface Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 6: 1462-1465. DOI: 10.1116/1.575726 |
0.377 |
|
| 1988 |
Stiles K, Kahn A, Kilday D, Margaritondo G. Metal‐induced gap states at the Ag and Au/GaAs interfaces Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 6: 1511-1514. DOI: 10.1116/1.575351 |
0.381 |
|
| 1988 |
Lin BY, Kahn A. Elastic electron fine structure: Application to the study of local order Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 6: 2085-2088. DOI: 10.1116/1.575190 |
0.312 |
|
| 1988 |
Duke CB, Paton A, Wang YR, Stiles K, Kahn A. Dynamical analysis of low-energy electron diffraction intensities from CdSe(1010) Surface Science. 197: 11-23. DOI: 10.1016/0039-6028(88)90569-9 |
0.352 |
|
| 1988 |
Wang YR, Duke CB, Stevens K, Kahn A, Magnusson KO, Flodström SA. Photoemission from surface states on the (101̄0) and (112̄0) surfaces of CdSe Surface Science. 206: L817-L823. DOI: 10.1016/0039-6028(88)90002-7 |
0.357 |
|
| 1987 |
Stiles K, Kahn A, Kilday DG, Margaritondo G. Initial stages of Schottky barrier formation: Temperature effects Journal of Vacuum Science & Technology B. 5: 987-991. DOI: 10.1116/1.583833 |
0.367 |
|
| 1987 |
Stiles K, Kahn A, Kilday DG, Margaritondo G. Summary Abstract: Kinetics of Schottky barrier formation: Au on low‐temperature GaAs(110) Journal of Vacuum Science and Technology. 5: 1527-1528. DOI: 10.1116/1.574597 |
0.325 |
|
| 1986 |
Duke CB, Mailhiot C, Paton A, Kahn A, Stiles K. Atomic and electronic structure of the (311) surfaces of GaAs Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 947-952. DOI: 10.1116/1.573762 |
0.337 |
|
| 1986 |
Kahn A. Atomic geometries of zincblende compound semiconductor surfaces: Similarities in surface rehybridizations Surface Science. 168: 1-15. DOI: 10.1016/0039-6028(86)90830-7 |
0.364 |
|
| 1985 |
Tu DW, Kahn A. ZnSe– and Se–GaAs interfaces Journal of Vacuum Science and Technology. 3: 922-925. DOI: 10.1116/1.573350 |
0.372 |
|
| 1985 |
Duke CB, Mailhiot C, Paton A, Li K, Bonapace C, Kahn A. Analysis of low-energy electron diffraction and angle-resolved photoemission from InP(110)-p(1 × 1)-Sb (1 ML) Surface Science. 163: 391-408. DOI: 10.1016/0039-6028(85)91068-4 |
0.376 |
|
| 1984 |
Duke CB, Paton A, Kahn A. The Atomic Geometries of GaP(110) and ZnS(110) Revisited: A Structural Ambiguity and its Resolution Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 2: 515-518. DOI: 10.1116/1.572610 |
0.343 |
|
| 1984 |
Tu DW, Kahn A. LEED and AES characterization of the GaAs(110)–ZnSe interface Journal of Vacuum Science and Technology. 2: 511-514. DOI: 10.1116/1.572609 |
0.372 |
|
| 1983 |
Kahn A, Bonapace CR, Duke CB, Paton A. STRUCTURE OF THE Al-GaP(110) AND Al-InP(110) INTERFACES Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 613-617. DOI: 10.1116/1.582609 |
0.334 |
|
| 1983 |
Duke CB, Kahn A, Paton A. Comparison of the atomic geometries of GaSb(110) and ZnTe(110): Failure of ionicity-structure correlations Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 1: 672-675. DOI: 10.1116/1.571975 |
0.36 |
|
| 1983 |
Bonapace CR, Kahn A. An AES–ELEED study of the Al/GaP(110) interface Journal of Vacuum Science and Technology. 1: 588-591. DOI: 10.1116/1.571963 |
0.304 |
|
| 1983 |
Duke CB, Paton A, Kahn A, Bonapace CR. Dynamical analysis of low-energy electron diffraction intensities from Al on GaP(110): The high-coverage A1P(110) limit Physical Review B. 28: 852-859. DOI: 10.1103/Physrevb.28.852 |
0.374 |
|
| 1983 |
Duke CB, Paton A, Kahn A. Atomic geometry of GaSb(110): Determination via elastic low-energy electron diffraction intensity analysis Physical Review B. 27: 3436-3444. DOI: 10.1103/Physrevb.27.3436 |
0.376 |
|
| 1983 |
Duke CB, Paton A, Kahn A, Bonapace CR. Dynamical analysis of low-energy electron-diffraction intensities from InAs(110) Physical Review B. 27: 6189-6198. DOI: 10.1103/Physrevb.21.4740 |
0.37 |
|
| 1983 |
Kahn A. Semiconductor surface structures Surface Science Reports. 3: 193-300. DOI: 10.1016/0167-5729(83)90006-7 |
0.355 |
|
| 1983 |
Duke CB, Richardson SL, Paton A, Kahn A. The atomic geometry of GaAs(110) revisited Surface Science. 127: L135-L143. DOI: 10.1016/0039-6028(83)90412-0 |
0.344 |
|
| 1982 |
Kahn A, Carelli J, Miller DL, Kowalczyk SP. Comparative LEED studies of AlxGa1−xAs(110) and GaAs(110)–Al(ϑ) Journal of Vacuum Science and Technology. 21: 380-383. DOI: 10.1116/1.571785 |
0.358 |
|
| 1982 |
Duke CB, Paton A, Ford WK, Kahn A, Carelli J. Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-p(1×1)-Sb(1 ML) Physical Review B. 26: 803-814. DOI: 10.1103/Physrevb.26.803 |
0.362 |
|
| 1982 |
Carelli J, Kahn A. LEED-AES-TDS characterization of Sb overlayers on GaAs(110) Surface Science. 116: 380-390. DOI: 10.1016/0039-6028(82)90441-1 |
0.429 |
|
| 1981 |
Kahn A, Carelli J, Duke CB, Paton A, Ford WK. ELASTIC LOW-ENERGY ELECTRON DIFFRACTION FROM GaAs(110)-p(1 multiplied by 1)-Sb(1 ML) Journal of Vacuum Science & Technology. 20: 775-777. DOI: 10.1116/1.571456 |
0.394 |
|
| 1981 |
Kahn A, Carelli J, Kanani D, Duke CB, Paton A, Brillson L. ATOMIC GEOMETRY OF Al-GaAs INTERFACES: GaAs (110)-p(1 multiplied by 1)-Al( theta ), 0 less than equivalent to theta less than equivalent to 8. 5 MONOLAYERS Journal of Vacuum Science & Technology. 19: 331-334. DOI: 10.1116/1.571058 |
0.308 |
|
| 1981 |
Duke CB, Paton A, Meyer RJ, Brillson LJ, Kahn A, Kanani D, Carelli J, Yeh JL, Margaritondo G, Katnani AD. Atomic geometry of GaAs(110)-p(1×1)-Al Physical Review Letters. 46: 440-443. DOI: 10.1103/Physrevlett.46.440 |
0.356 |
|
| 1981 |
Duke CB, Paton A, Ford WK, Kahn A, Carelli J. Dynamical analysis of low-energy-electron-diffraction intensities from GaP(110) Physical Review B. 24: 562-573. DOI: 10.1103/Physrevb.24.562 |
0.366 |
|
| 1981 |
Duke CB, Paton A, Ford WK, Kahn A, Scott G. Dynamical analysis of low-energy-electron-diffraction intensities from CdTe(110) Physical Review B. 24: 3310-3317. DOI: 10.1103/Physrevb.24.3310 |
0.392 |
|
| 1980 |
Duke CB, Meyer RJ, Paton A, Kahn A, Carelli J, Yeh JL. ANALYSIS OF LOW-ENERGY ELECTRON DIFFRACTION INTENSITIES FROM ZnS(110) Journal of Vacuum Science & Technology. 18: 866-870. DOI: 10.1116/1.570979 |
0.37 |
|
| 1980 |
Kahn A, Kanani D, Carelli J, Yeh JL, Duke CB, Meyer RJ, Paton A, Brillson L. LEED INTENSITY ANALYSIS OF THE STRUCTURE OF Al ON GaAs(110) Journal of Vacuum Science & Technology. 18: 792-796. DOI: 10.1116/1.570949 |
0.328 |
|
| 1980 |
Meyer RJ, Duke CB, Paton A, Tsang JC, Yeh JL, Kahn A, Mark P. Dynamical analysis of low-energy-electron diffraction intensities from InP (110) Physical Review B. 22: 6171-6183. DOI: 10.1103/Physrevb.22.6171 |
0.589 |
|
| 1980 |
Meyer RJ, Duke CB, Paton A, So E, Yeh JL, Kahn A, Mark P. Surface structure of ZnTe (110) as determined from dynamical analysis of low-energy-electron diffraction intensities Physical Review B. 22: 2875-2886. DOI: 10.1103/Physrevb.22.2875 |
0.595 |
|
| 1980 |
Tsang J, Kahn A, Mark P. Comparison of leed and auger data from cleaved and sputtered-annealed InP(110) surfaces Surface Science. 97: 119-127. DOI: 10.1016/0039-6028(80)90108-9 |
0.558 |
|
| 1980 |
Kahn A, Kanani D, Mark P. The GaAs(110)-oxygen interaction: A LEED analysis. II Surface Science. 94: 547-554. DOI: 10.1016/0039-6028(80)90025-4 |
0.522 |
|
| 1979 |
Duke CB, Meyer RJ, Paton A, Yeh JL, Tsang JC, Kahn A, Mark P. SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS: InSb(110) AND ITS COMPARISON WITH GaAs(110) AND ZnTe(110) Journal of Vacuum Science & Technology. 17: 501-505. DOI: 10.1116/1.570494 |
0.58 |
|
| 1979 |
Duke CB, Meyer RJ, Paton A, Mark P, Kahn A, So E, Yeh JL. STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS Journal of Vacuum Science & Technology. 16: 1252-1257. DOI: 10.1116/1.570136 |
0.575 |
|
| 1979 |
Meyer RJ, Duke CB, Paton A, Kahn A, So E, Yeh JL, Mark P. Dynamical calculation of low-energy electron diffraction intensities from gaAs(110): Influence of boundary conditions, exchange potential, lattice vibrations, and multilayer reconstructions Physical Review B. 19: 5194-5205. DOI: 10.1103/Physrevb.19.5194 |
0.578 |
|
| 1979 |
Mark P, Kahn A, Cisneros G, Bonn M. The structure, chemistry, and spectroscopy of the surfaces of tetrahedrally coordinated semiconductors Critical Reviews in Solid State and Materials Sciences. 8: 317-381. DOI: 10.1080/10408437908243626 |
0.567 |
|
| 1979 |
Kahn A, Kanani D, Mark P, Chye PW, Su CY, Lindau I, Spicer WE. Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysis Surface Science. 87: 325-332. DOI: 10.1016/0039-6028(79)90532-6 |
0.566 |
|
| 1978 |
Kahn A, So E, Mark P, Duke CB, Meyer RJ. Surface and near‐surface atomic structure of GaAs (110) Journal of Vacuum Science and Technology. 15: 1223-1228. DOI: 10.1116/1.569697 |
0.307 |
|
| 1978 |
Kahn A, So E, Mark P, Duke CB. Subsurface atomic displacements at the GaAs(110) surface Journal of Vacuum Science and Technology. 15: 580-584. DOI: 10.1116/1.569630 |
0.532 |
|
| 1978 |
Taubenblatt M, So E, Sih P, Kahn A, Mark P. Atomic structure of the annealed Ge(111) surface Journal of Vacuum Science and Technology. 15: 1143-1145. DOI: 10.1116/1.569526 |
0.351 |
|
| 1978 |
Kahn A, Cisneros G, Bonn M, Mark P, Duke CB. Evidence for subsurface atomic displacements of the GaAs(110) surface from LEED/CMTA analysis Surface Science. 71: 387-396. DOI: 10.1016/0039-6028(78)90339-4 |
0.577 |
|
| 1977 |
Mark P, Cisneros G, Bonn M, Kahn A, Duke CB, Paton A, Lubinsky AR. Approach to structure determination of compound semiconductor surfaces by kinematical LEED calculations: GaAs(110) and ZnSe(110) Journal of Vacuum Science and Technology. 14: 910-916. DOI: 10.1116/1.569327 |
0.343 |
|
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