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Nicholas A. Stoute, Ph.D. - Publications

Affiliations: 
2011 North Carolina State University, Raleigh, NC 
Area:
Electronic Materials, Optics
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6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Morales D, Stoute NA, Yu Z, Aspnes DE, Dickey MD. Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides Applied Physics Letters. 109: 091905. DOI: 10.1063/1.4961910  0.448
2008 Choi SG, Aspnes DE, Stoute NA, Kim YD, Kim HJ, Chang YC, Palmstrøm CJ. Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters Physica Status Solidi (a) Applications and Materials Science. 205: 884-887. DOI: 10.1002/Pssa.200777848  0.436
2007 Lucovsky G, Fulton CC, Ju BS, Stoute NA, Seo H, Aspnes DE, Lüning J. Corrigendum to: "Suppression of Jahn-Teller term-split band edge states in the X-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3". [Radiat. Phys. Chem. 75 (2006) 1591-1595] (DOI:10.1016/j.radphyschem.2006.05.004) Radiation Physics and Chemistry. 76: 907. DOI: 10.1016/J.Radphyschem.2007.01.001  0.544
2006 Lucovsky G, Fulton CC, Ju BS, Stoute NA, Tao S, Aspnes DE, Lüning J. Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3 Radiation Physics and Chemistry. 75: 1591-1595. DOI: 10.1016/J.Radphyschem.2006.05.004  0.564
2006 Lucovsky G, Hinkle CL, Fulton CC, Stoute NA, Seo H, Lüning J. Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2 Radiation Physics and Chemistry. 75: 2097-2101. DOI: 10.1016/J.Radphyschem.2005.07.062  0.479
2005 Lucovsky G, Hong JG, Fulton CC, Stoute NA, Zou Y, Nemanich RJ, Aspnes DE, Ade H, Schlom DG. Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra Microelectronics Reliability. 45: 827-830. DOI: 10.1016/J.Microrel.2004.11.038  0.539
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