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Isaac H. Wildeson, Ph.D. - Publications

Affiliations: 
2011 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Nanotechnology, Electronics and Electrical Engineering, Materials Science Engineering
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Zhao Z, Singh A, Chesin J, Armitage R, Wildeson I, Deb P, Armstrong A, Kisslinger K, Stach EA, Gradečak S. Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures Applied Physics Express. 12: 034003. DOI: 10.7567/1882-0786/Ab0341  0.637
2019 Goodman SA, Syaranamual GJ, Chung JY, Li Z, Singh A, Su D, Kisslinger K, Armitage R, Wildeson I, Deb P, Stach E, Gradecak S. Effects of Beam-Induced Carbon Deposition on Electron Energy-Loss Spectroscopy Analysis of Compositional Fluctuations in InGaN/GaN Quantum Well LEDs Microscopy and Microanalysis. 25: 652-653. DOI: 10.1017/S1431927619003994  0.603
2017 Armstrong AM, Crawford MH, Koleske DD, Nelson EC, Wildeson I, Deb P. Spatial and compositional dependence of deep-level defects in InGaN LEDs (Conference Presentation) Proceedings of Spie. 10124. DOI: 10.1117/12.2252683  0.634
2017 Bhardwaj J, Cesaratto JM, Wildeson IH, Choy H, Tandon A, Soer WA, Schmidt PJ, Spinger B, Deb P, Shchekin OB, Götz W. Progress in high-luminance LED technology for solid-state lighting Physica Status Solidi (a). 214: 1600826. DOI: 10.1002/Pssa.201600826  0.613
2011 Liang Z, Wildeson IH, Colby R, Ewoldt DA, Zhang T, Sands TD, Stach EA, Benes B, García RE. Built-in electric field minimization in (In, Ga)N nanoheterostructures. Nano Letters. 11: 4515-9. PMID 21942457 DOI: 10.1021/Nl1044605  0.716
2011 Wildeson IH, Ewoldt DA, Colby R, Stach EA, Sands TD. Controlled growth of ordered nanopore arrays in GaN. Nano Letters. 11: 535-40. PMID 21171632 DOI: 10.1021/Nl103418Q  0.737
2011 Montgomery KH, Allen CR, Wildeson IH, Jeon JH, Ramdas AK, Woodall JM. Gettered GaP substrates for improved multijunction solar cell devices Journal of Electronic Materials. 40: 1457-1460. DOI: 10.1007/S11664-011-1605-1  0.328
2010 Colby R, Liang Z, Wildeson IH, Ewoldt DA, Sands TD, García RE, Stach EA. Dislocation filtering in GaN nanostructures. Nano Letters. 10: 1568-73. PMID 20397703 DOI: 10.1021/Nl9037455  0.739
2010 Liang Z, Colby R, Wildeson IH, Ewoldt DA, Sands TD, Stach EA, García RE. Publisher's Note: “GaN nanostructure design for optimal dislocation filtering” [J. Appl. Phys. 108, 074313 (2010)] Journal of Applied Physics. 108: 109901. DOI: 10.1063/1.3518424  0.7
2010 Liang Z, Colby R, Wildeson IH, Ewoldt DA, Sands TD, Stach EA, García RE. GaN nanostructure design for optimal dislocation filtering Journal of Applied Physics. 108. DOI: 10.1063/1.3491024  0.726
2010 Wildeson IH, Colby R, Ewoldt DA, Liang Z, Zakharov DN, Zaluzec NJ, García RE, Stach EA, Sands TD. Publisher's Note: “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy” [J. Appl. Phys. 108, 044303 (2010)] Journal of Applied Physics. 108: 079907. DOI: 10.1063/1.3488972  0.726
2010 Wildeson IH, Colby R, Ewoldt DA, Liang Z, Zakharov DN, Zaluzec NJ, García RE, Stach EA, Sands TD. III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy Journal of Applied Physics. 108. DOI: 10.1063/1.3466998  0.753
2008 Oliver MH, Schroeder JL, Ewoldt DA, Wildeson IH, Rawat V, Colby R, Cantwell PR, Stach EA, Sands TD. Organometallic vapor phase epitaxial growth of GaN on ZrNAlNSi substrates Applied Physics Letters. 93. DOI: 10.1063/1.2953541  0.697
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