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Jonathan Z. Sexton, Ph.D. - Publications

Affiliations: 
2004 University of California, San Diego, La Jolla, CA 
Area:
STM/STS of gate oxides on compound semiconductors and adsorbates on organic semiconductor
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2007 Winn DL, Hale MJ, Grassman TJ, Sexton JZ, Kummel AC, Passlack M, Droopad R. Electronic properties of adsorbates on GaAs(001)-c(2x8)/(2x4). The Journal of Chemical Physics. 127: 134705. PMID 17919041 DOI: 10.1063/1.2786097  0.664
2007 Hale MJ, Yi SI, Sexton JZ, Kummel AC, Passlack M. Erratum: “Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)∕(2×4)” [J. Chem. Phys. 119, 6719 (2003)] The Journal of Chemical Physics. 127: 049902. DOI: 10.1063/1.2748759  0.681
2004 Sexton JZ, Kummel AC. Island morphology statistics and growth mechanism for oxidation of the Al(111) surface with thermal O2 and NO. The Journal of Chemical Physics. 121: 6518-24. PMID 15446953 DOI: 10.1063/1.1781152  0.634
2004 Hale MJ, Sexton JZ, Winn DL, Kummel AC, Erbudak M, Passlack M. The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2 x 8)/(2 x 4). The Journal of Chemical Physics. 120: 5745-54. PMID 15267453 DOI: 10.1063/1.1648016  0.697
2003 Sexton JZ, Kummel AC. Comparison of density functional theory methods as applied to compound semiconductor-oxide interfaces: Slab versus cluster models Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1908-1914. DOI: 10.1116/1.1589522  0.598
2003 Sexton JZ, Yi SI, Hale M, Kruse P, Demkov AA, Kummel AC. Displacement of surface arsenic atoms by insertion of oxygen atoms into As-Ga backbonds Journal of Chemical Physics. 119: 9191-9198. DOI: 10.1063/1.1614209  0.75
2003 Hale MJ, Yi SI, Sexton JZ, Kummel AC, Passlack M. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4) Journal of Chemical Physics. 119: 6719-6728. DOI: 10.1063/1.1601596  0.763
2003 Passlack M, Abrokwah JK, Droopad R, Yu Z, Overgaard C, Yi SI, Hale M, Sexton J, Kummel AC. Charge balanced Ga2O-GaAs interface and application to self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor Institute of Physics Conference Series. 174: 251-254.  0.639
2002 Passlack M, Abrokwah JK, Droopad R, Yu Z, Overgaard C, Yi SI, Hale M, Sexton J, Kummel AC. Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor Ieee Electron Device Letters. 23: 508-510. DOI: 10.1109/Led.2002.802591  0.672
2002 Komrowski AJ, Ternow H, Razaznejad B, Berenbak B, Sexton JZ, Zoric I, Kasemo B, Lundqvist BI, Stolte S, Kleyn AW, Kummel AC. Dissociative adsorption of NO upon Al(111): Orientation dependent charge transfer and chemisorption reaction dynamics Journal of Chemical Physics. 117: 8185-8189. DOI: 10.1063/1.1519107  0.74
2001 Komrowski AJ, Sexton JZ, Kummel AC, Binetti M, Weisse O, Hasselbrink E. Oxygen abstraction from dioxygen on the Al(111) surface. Physical Review Letters. 87: 246103. PMID 11736518 DOI: 10.1103/Physrevlett.87.246103  0.751
2001 Komrowski AJ, Sexton JZ, Kummel AC, Binetti M, Weiße O, Hasselbrink E. Oxygen abstraction from dioxygen on the Al(111) surface Physical Review Letters. 87: 2461031-2461034.  0.731
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