| Year |
Citation |
Score |
| 2017 |
Kim D, Tang M, Wu J, Hatch S, Maidaniuk Y, Dorogan V, Mazur YI, Salamo GJ, Liu H. Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers Proceedings of Spie. 10099. DOI: 10.1117/12.2250328 |
0.744 |
|
| 2016 |
Kim D, Tang M, Wu J, Hatch S, Maidaniuk Y, Dorogan V, Mazur YI, Salamo GJ, Liu H. Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2016.2547581 |
0.666 |
|
| 2016 |
Lam P, Wu J, Tang M, Kim D, Hatch S, Ramiro I, Dorogan VG, Benamara M, Mazur YI, Salamo GJ, Wilson J, Allison R, Liu H. InAs/InGaP quantum dot solar cells with an AlGaAs interlayer Solar Energy Materials and Solar Cells. 144: 96-101. DOI: 10.1016/J.Solmat.2015.08.031 |
0.656 |
|
| 2015 |
Steele JA, Horvat J, Lewis RA, Henini M, Fan D, Mazur YI, Dorogan VG, Grant PC, Yu SQ, Salamo GJ. Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures. Nanoscale. PMID 26584058 DOI: 10.1039/C5Nr06676J |
0.425 |
|
| 2015 |
Kuchuk AV, Lytvyn PM, Li C, Stanchu HV, Mazur YI, Ware ME, Benamara M, Ratajczak R, Dorogan V, Kladko VP, Belyaev AE, Salamo GG. Nanoscale Electro-Structural Characterization of Compositionally Graded AlΧGa1-ΧN Heterostructures on GaN/sapphire (0001) Substrate. Acs Applied Materials & Interfaces. PMID 26431166 DOI: 10.1021/Acsami.5B07924 |
0.366 |
|
| 2015 |
Chen S, Tang M, Wu J, Jiang Q, Dorogan V, Benamara M, Mazur Y, Salamo G, Liu H. Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate Photonics. 2: 646-658. DOI: 10.3390/Photonics2020646 |
0.625 |
|
| 2015 |
Benamara M, Mazur YI, Lytvyn P, Ware ME, Dorogan V, Hu X, de Souza LD, Marega E, Theodores M, Marques G, Salamo G. Ordering of InGaAs Quantum Dots Grown by Molecular Beam Epitaxy under As2 gas flux Mrs Proceedings. 1792. DOI: 10.1557/Opl.2015.537 |
0.594 |
|
| 2015 |
Chen S, Tang M, Jiang Q, Wu J, Dorogan VG, Benamara M, Mazur YI, Salamo GJ, Seeds A, Liu H. Electrically pumped 1.3-μm InAs/GaAs quantum dot laser monolithically grown on Si substrate lasing up to 111°C Conference On Lasers and Electro-Optics Europe - Technical Digest. 2015. DOI: 10.1364/CLEO_SI.2015.SW3F.1 |
0.648 |
|
| 2015 |
Mazur YI, Lopes-Oliveira V, De Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains Journal of Applied Physics. 117. DOI: 10.1063/1.4918544 |
0.685 |
|
| 2015 |
Tang M, Wu J, Chen S, Jiang Q, Seeds AJ, Liu H, Dorogan VG, Benamara M, Mazur Y, Salamo G. Optimisation of the dislocation filter layers in 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates Iet Optoelectronics. 9: 61-64. DOI: 10.1049/Iet-Opt.2014.0078 |
0.633 |
|
| 2015 |
Syrbu N, Dorogan A, Dorogan V, Zalamai V. Birefringence in quantum wells of heterostructures In0.68Al0.1Ga0.13As/In0.42Al0.22Ga0.24As/InP Superlattices and Microstructures. 82: 143-150. DOI: 10.1016/j.spmi.2015.02.026 |
0.399 |
|
| 2014 |
Steele JA, Lewis RA, Henini M, Lemine OM, Fan D, Mazur YI, Dorogan VG, Grant PC, Yu SQ, Salamo GJ. Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration. Optics Express. 22: 11680-9. PMID 24921290 DOI: 10.1364/Oe.22.011680 |
0.49 |
|
| 2014 |
Tang M, Chen S, Wu J, Jiang Q, Dorogan VG, Benamara M, Mazur YI, Salamo GJ, Seeds A, Liu H. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers. Optics Express. 22: 11528-35. PMID 24921274 DOI: 10.1364/Oe.22.011528 |
0.592 |
|
| 2014 |
Mazur YI, Dorogan VG, de Souza LD, Fan D, Benamara M, Schmidbauer M, Ware ME, Tarasov GG, Yu SQ, Marques GE, Salamo GJ. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures. Nanotechnology. 25: 035702. PMID 24346504 DOI: 10.1088/0957-4484/25/3/035702 |
0.622 |
|
| 2014 |
Grant PC, Fan D, Mosleh A, Yu SQ, Dorogan VG, Hawkridge ME, Mazur YI, Benamara M, Salamo GJ, Johnson SR. Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4868110 |
0.567 |
|
| 2014 |
Chen S, Tang M, Wu J, Jiang Q, Dorogan VG, Benamara M, Mazur YI, Salamo GJ, Seeds A, Liu H. 1.3μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers Conference Digest - Ieee International Semiconductor Laser Conference. 88-89. DOI: 10.1109/ISLC.2014.177 |
0.396 |
|
| 2014 |
Lopes-Oliveira V, Mazur YI, De Souza LD, Marçal LAB, Wu J, Teodoro MD, Malachias A, Dorogan VG, Benamara M, Tarasov GG, Marega E, Marques GE, Wang ZM, Orlita M, Salamo GJ, et al. Structural and magnetic confinement of holes in the spin-polarized emission of coupled quantum ring-quantum dot chains Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.125315 |
0.654 |
|
| 2014 |
Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains Journal of Applied Physics. 116. DOI: 10.1063/1.4902311 |
0.704 |
|
| 2014 |
Yerino CD, Simmonds PJ, Liang B, Dorogan VG, Ware ME, Mazur YI, Jung D, Huffaker DL, Salamo GJ, Lee ML. Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap Applied Physics Letters. 105. DOI: 10.1063/1.4893747 |
0.66 |
|
| 2014 |
Chen SM, Tang MC, Wu J, Jiang Q, Dorogan VG, Benamara M, Mazur YI, Salamo GJ, Seeds AJ, Liu H. 1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C Electronics Letters. 50: 1467-1468. DOI: 10.1049/el.2014.2414 |
0.453 |
|
| 2014 |
Chen S, Tang M, Jiang Q, Wu J, Dorogan VG, Benamara M, Mazur YI, Salamo GJ, Smowton P, Seeds A, Liu H. InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate Acs Photonics. 1: 638-642. DOI: 10.1021/Ph500162A |
0.543 |
|
| 2014 |
Lam P, Hatch S, Wu J, Tang M, Dorogan VG, Mazur YI, Salamo GJ, Ramiro I, Seeds A, Liu H. Voltage recovery in charged InAs/GaAs quantum dot solar cells Nano Energy. 6: 159-166. DOI: 10.1016/J.Nanoen.2014.03.016 |
0.687 |
|
| 2014 |
Lytvyn PM, Mazur YI, Benamara M, Ware ME, Dorogan VG, De Souza LD, Marega E, Teodoro MD, Marques GE, Salamo GJ. Temperature driven three-dimensional ordering of InGaAs/GaAs quantum dot superlattices grown under As2 gas flux Applied Surface Science. 305: 689-696. DOI: 10.1016/j.apsusc.2014.03.171 |
0.561 |
|
| 2013 |
Simmonds PJ, Yerino CD, Sun M, Liang B, Huffaker DL, Dorogan VG, Mazur Y, Salamo G, Lee ML. Tuning quantum dot luminescence below the bulk band gap using tensile strain. Acs Nano. 7: 5017-23. PMID 23701255 DOI: 10.1021/Nn400395Y |
0.612 |
|
| 2013 |
Lin A, Liang BL, Dorogan VG, Mazur YI, Tarasov GG, Salamo GJ, Huffaker DL. Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure. Nanotechnology. 24: 075701. PMID 23358560 DOI: 10.1088/0957-4484/24/7/075701 |
0.632 |
|
| 2013 |
Wu J, Wang ZM, Dorogan VG, Li S, Lee J, Mazur YI, Kim ES, Salamo GJ. Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells. Nanoscale Research Letters. 8: 5. PMID 23281811 DOI: 10.1186/1556-276X-8-5 |
0.648 |
|
| 2013 |
Fan D, Grant PC, Yu SQ, Dorogan VG, Hu X, Zeng Z, Li C, Hawkridge ME, Benamara M, Mazur YI, Salamo GJ, Johnson SR, Wang ZM. MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4792518 |
0.735 |
|
| 2013 |
Mazur YI, Dorogan VG, Benamara M, Ware ME, Schmidbauer M, Tarasov GG, Johnson SR, Lu X, Yu SQ, Tiedje T, Salamo GJ. Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/6/065306 |
0.58 |
|
| 2013 |
Guzun D, Mazur YI, Dorogan VG, Ware ME, Marega E, Tarasov GG, Lienau C, Salamo GJ. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures Journal of Applied Physics. 113. DOI: 10.1063/1.4801891 |
0.678 |
|
| 2013 |
Mazur YI, Dorogan VG, Schmidbauer M, Tarasov GG, Johnson SR, Lu X, Ware ME, Yu SQ, Tiedje T, Salamo GJ. Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples Journal of Applied Physics. 113. DOI: 10.1063/1.4801429 |
0.637 |
|
| 2013 |
Mazur YI, Dorogan VG, Marega E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures Journal of Applied Physics. 113. DOI: 10.1063/1.4779686 |
0.718 |
|
| 2013 |
Liang B, Wong PS, Tran T, Dorogan VG, Mazur YI, Ware ME, Salamo GJ, Shih CK, Huffaker DL. Site-controlled formation of InGaAs quantum nanostructures-Tailoring the dimensionality and the quantum confinement Nano Research. 6: 235-242. DOI: 10.1007/S12274-013-0299-5 |
0.699 |
|
| 2013 |
Fan D, Zeng Z, Dorogan VG, Hirono Y, Li C, Mazur YI, Yu SQ, Johnson SR, Wang ZM, Salamo GJ. Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy Journal of Materials Science: Materials in Electronics. 24: 1635-1639. DOI: 10.1007/S10854-012-0987-Z |
0.641 |
|
| 2012 |
Mazur YI, Dorogan VG, Ware ME, Marega E, Benamara M, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. State filling dependent luminescence in hybrid tunnel coupled dot-well structures. Nanoscale. 4: 7509-16. PMID 23099560 DOI: 10.1039/C2Nr32477F |
0.622 |
|
| 2012 |
Kondratenko SV, Vakulenko OV, Kunets VP, Mazur YI, Dorogan VG, Ware ME, Salamo GJ. Photoconductivity peculiarities in InGaAs quantum wire heterostructures: Anisotropy and high photoresponsivity at room temperature Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/10/105024 |
0.637 |
|
| 2012 |
Fan D, Zeng Z, Hu X, Dorogan VG, Li C, Benamara M, Hawkridge ME, Mazur YI, Yu SQ, Johnson SR, Wang ZM, Salamo GJ. Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4764556 |
0.564 |
|
| 2012 |
Mazur YI, Dorogan VG, Ware ME, Marega E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures Journal of Applied Physics. 112. DOI: 10.1063/1.4759318 |
0.676 |
|
| 2012 |
Wu J, Wang ZM, Dorogan VG, Li S, Zhou Z, Li H, Lee J, Kim ES, Mazur YI, Salamo GJ. Strain-free ring-shaped nanostructures by droplet epitaxy for photovoltaic application Applied Physics Letters. 101. DOI: 10.1063/1.4738996 |
0.627 |
|
| 2012 |
Kunets VP, Furrow CS, Morgan TA, Hirono Y, Ware ME, Dorogan VG, Mazur YI, Salamo GJ. InGaAs quantum wire intermediate band solar cell Applied Physics Letters. 101. DOI: 10.1063/1.4737944 |
0.596 |
|
| 2012 |
Mazur YI, Dorogan VG, Salamo GJ, Tarasov GG, Liang BL, Reyner CJ, Nunna K, Huffaker DL. Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures Applied Physics Letters. 100. DOI: 10.1063/1.3676274 |
0.664 |
|
| 2012 |
Syrbu NN, Dorogan V, Dorogan A, Vieru T, Ursaki VV, Zalamai VV. Optical spectra in the region of exciton resonances in quantum wells and quantum dots of In 0.3Ga 0.7As/GaAs heterostructures Superlattices and Microstructures. 52: 738-749. DOI: 10.1016/j.spmi.2012.06.022 |
0.508 |
|
| 2011 |
Mazur YI, Dorogan VG, Schmidbauer M, Tarasov GG, Johnson SR, Lu X, Yu SQ, Wang ZhM, Tiedje T, Salamo GJ. Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure. Nanotechnology. 22: 375703. PMID 21852736 DOI: 10.1088/0957-4484/22/37/375703 |
0.618 |
|
| 2011 |
Wu J, Wang ZM, Dorogan VG, Li S, Mazur YI, Salamo GJ. Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces. Nanoscale. 3: 1485-8. PMID 21384043 DOI: 10.1039/C0Nr00973C |
0.694 |
|
| 2011 |
Lee J, Wang ZM, Hirono Y, Dorogan VG, Mazur YI, Kim ES, Koo SM, Park S, Song S, Salamo GJ. Low-density quantum dot molecules by selective etching using in droplet as a mask Ieee Transactions On Nanotechnology. 10: 600-605. DOI: 10.1109/Tnano.2010.2056695 |
0.581 |
|
| 2011 |
Cesar DF, Teodoro MD, Lopez-Richard V, Marques GE, Marega E, Dorogan VG, Mazur YI, Salamo GJ. Carrier transfer in the optical recombination of quantum dots Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.195307 |
0.693 |
|
| 2011 |
Lee J, Wang Z, Hirono Y, Kim ES, Koo SM, Dorogan VG, Mazur YI, Song S, Park G, Salamo GJ. InGaAs quantum dot molecules during selective etching using an in droplet mask Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/2/025102 |
0.608 |
|
| 2011 |
Kunets VP, Prosandeev S, Mazur YI, Ware ME, Teodoro MD, Dorogan VG, Lytvyn PM, Salamo GJ. Isotropic Hall effect and "freeze-in" of carriers in the InGaAs self-assembled quantum wires Journal of Applied Physics. 110. DOI: 10.1063/1.3656455 |
0.633 |
|
| 2011 |
Mazur YI, Dorogan VG, Marega E, Tarasov GG, Salamo GJ. Spectroscopic signature of strain-induced quantum dots created by buried InAs quantum dots in an InGaAs quantum well Journal of Applied Physics. 110. DOI: 10.1063/1.3634118 |
0.717 |
|
| 2011 |
Mazur YI, Dorogan VG, Marega E, Benamara M, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures Applied Physics Letters. 98. DOI: 10.1063/1.3560063 |
0.692 |
|
| 2011 |
Dorogan VG, Wang ZM, Kunets VP, Schmidbauer M, Xie YZ, Teodoro MD, Lytvyn PM, Mazur YI, Salamo GJ. Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces Materials Letters. 65: 1427-1430. DOI: 10.1016/J.Matlet.2011.02.023 |
0.582 |
|
| 2011 |
Wu J, Wang ZM, Dorogan VG, Mazur YI, Li S, Salamo GJ. Insight into optical properties of strain-free quantum dot pairs Journal of Nanoparticle Research. 13: 947-952. DOI: 10.1007/S11051-010-0219-5 |
0.706 |
|
| 2010 |
He J, Reyner CJ, Liang BL, Nunna K, Huffaker DL, Pavarelli N, Gradkowski K, Ochalski TJ, Huyet G, Dorogan VG, Mazur YI, Salamo GJ. Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition. Nano Letters. 10: 3052-6. PMID 20698619 DOI: 10.1021/Nl102237N |
0.615 |
|
| 2010 |
Wang ZM, Xie YZ, Kunets VP, Dorogan VG, Mazur YI, Salamo GJ. Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates. Nanoscale Research Letters. 5: 1320-3. PMID 20676193 DOI: 10.1007/S11671-010-9645-7 |
0.651 |
|
| 2010 |
Mazur YI, Dorogan V, Marega E, Cesar D, Lopez-Richard V, Marques G, Zhuchenko ZY, Tarasov G, Salamo G. Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures. Nanoscale Research Letters. 5: 991-1001. PMID 20672035 DOI: 10.1007/S11671-010-9590-5 |
0.685 |
|
| 2010 |
Teodoro MD, Campo VL, Lopez-Richard V, Marega E, Marques GE, Gobato YG, Iikawa F, Brasil MJ, Abuwaar ZY, Dorogan VG, Mazur YI, Benamara M, Salamo GJ. Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields. Physical Review Letters. 104: 086401. PMID 20366953 DOI: 10.1103/Physrevlett.104.086401 |
0.649 |
|
| 2010 |
Wu J, Shao D, Dorogan VG, Li AZ, Li S, DeCuir EA, Manasreh MO, Wang ZM, Mazur YI, Salamo GJ. Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy. Nano Letters. 10: 1512-6. PMID 20356102 DOI: 10.1021/Nl100217K |
0.726 |
|
| 2010 |
Lee J, Wang ZM, Dorogan VG, Mazur YI, Salamo GJ. Evolution of various nanostructures and preservation of self-assembled InAs quantum dots during GaAs capping Ieee Transactions On Nanotechnology. 9: 149-156. DOI: 10.1109/Tnano.2009.2028735 |
0.708 |
|
| 2010 |
Mazur YI, Dorogan VG, Guzun D, Marega E, Salamo GJ, Tarasov GG, Govorov AO, Vasa P, Lienau C. Measurement of coherent tunneling between InGaAs quantum wells and InAs quantum dots using photoluminescence spectroscopy Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.155413 |
0.712 |
|
| 2010 |
Kunets VP, Teodoro MD, Dorogan VG, Lytvyn PM, Tarasov GG, Sleezer R, Ware ME, Mazur YI, Krasinski JS, Salamo GJ. Interface roughness scattering in laterally coupled InGaAs quantum wires Applied Physics Letters. 97. DOI: 10.1063/1.3532098 |
0.722 |
|
| 2010 |
Mazur YI, Dorogan VG, Marega E, Zhuchenko ZY, Ware ME, Benamara M, Tarasov GG, Vasa P, Lienau C, Salamo GJ. Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures Journal of Applied Physics. 108. DOI: 10.1063/1.3493240 |
0.703 |
|
| 2010 |
Sablon KA, Little JW, Olver KA, Wang ZM, Dorogan VG, Mazur YI, Salamo GJ, Towner FJ. Effects of AlGaAs energy barriers on InAs/GaAs quantum dot solar cells Journal of Applied Physics. 108. DOI: 10.1063/1.3486014 |
0.807 |
|
| 2010 |
Wang ZM, Kunets VP, Xie YZ, Schmidbauer M, Dorogan VG, Mazur YI, Salamo GJ. Multilayer self-organization of InGaAs quantum wires on GaAs surfaces Physics Letters, Section a: General, Atomic and Solid State Physics. 375: 170-173. DOI: 10.1016/J.Physleta.2010.10.051 |
0.585 |
|
| 2010 |
Mazur YI, Dorogan VG, Marega E, Cesar DF, Lopez-Richard V, Marques GE, Zhuchenko ZY, Tarasov GG, Salamo GJ. Cooperative effects in the photoluminescence of (In,Ga)As/GaAs quantum dot chain structures Nanoscale Research Letters. 5: 991-1001. DOI: 10.1007/s11671-010-9590-5 |
0.514 |
|
| 2009 |
Liang BL, Dorogan VG, Mazur YI, Strom NW, Lee JH, Sablon KA, Wang ZhM, Salamo GJ. InAs quantum dot clusters grown on GaAs droplet templates: surface morphologies and optical properties. Journal of Nanoscience and Nanotechnology. 9: 3320-4. PMID 19453010 DOI: 10.1166/Jnn.2009.Vc11 |
0.806 |
|
| 2009 |
Mazur YI, Dorogan VG, Bierwagen O, Tarasov GG, DeCuir EA, Noda S, Zhuchenko ZY, Manasreh MO, Masselink WT, Salamo GJ. Spectroscopy of shallow InAs/InP quantum wire nanostructures. Nanotechnology. 20: 065401. PMID 19417384 DOI: 10.1088/0957-4484/20/6/065401 |
0.648 |
|
| 2009 |
Mazur YI, Dorogan VG, Marega E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. One-dimensional features of In(Ga)As/GaAs dot chain structures with changeable interdot coupling New Journal of Physics. 11. DOI: 10.1088/1367-2630/11/4/043022 |
0.589 |
|
| 2009 |
Lee JH, Wang ZM, Dorogan VG, Mazur YI, Ware ME, Salamo GJ. Tuning the emission profiles of various self-assembled Inx Ga1-x As nanostructures by rapid thermal annealing Journal of Applied Physics. 106. DOI: 10.1063/1.3213095 |
0.672 |
|
| 2009 |
Dorogan VG, Mazur YI, Marega E, Tarasov GG, Ware ME, Salamo GJ. Hybridized quantum dot-wetting layer states in photoluminescence of In(Ga)As/GaAs dot chain samples Journal of Applied Physics. 105. DOI: 10.1063/1.3151707 |
0.635 |
|
| 2009 |
Mazur YI, Dorogan VG, Marega E, Tarasov GG, Cesar DF, Lopez-Richard V, Marques GE, Salamo GJ. Mechanisms of interdot coupling in (In,Ga)As/GaAs quantum dot arrays Applied Physics Letters. 94. DOI: 10.1063/1.3103312 |
0.628 |
|
| 2009 |
Xie YZ, Kunets VP, Wang ZM, Dorogan V, Mazur YI, Wu J, Salamo GJ. Multiple stacking of inGaAs/GaAs (731) nanostructures Nano-Micro Letters. 1: 1-3. DOI: 10.1007/Bf03353596 |
0.609 |
|
| 2009 |
Xie YZ, Kunets VP, Wang ZM, Dorogan V, Mazur YI, Wu J, Salamo GJ. Multiple stacking of InGaAs/GaAs (731) nanostructures Nano-Micro Letters. 1: 1-3. DOI: 10.1007/BF03353596 |
0.408 |
|
| 2008 |
Wong PS, Liang BL, Dorogan VG, Albrecht AR, Tatebayashi J, He X, Nuntawong N, Mazur YI, Salamo GJ, Brueck SR, Huffaker DL. Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure. Nanotechnology. 19: 435710. PMID 21832714 DOI: 10.1088/0957-4484/19/43/435710 |
0.728 |
|
| 2008 |
Lytvyn PM, Mazur YI, Marega E, Dorogan VG, Kladko VP, Slobodian MV, Strelchuk VV, Hussein ML, Ware ME, Salamo GJ. Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition. Nanotechnology. 19: 505605. PMID 19942777 DOI: 10.1088/0957-4484/19/50/505605 |
0.674 |
|
| 2008 |
Wong PS, Liang BL, Nuntawong N, Tatebayashi J, Huffaker DL, Dorogan VG, Mazur YI, Salamo GJ. Photoluminescence comparison analysis of patterned and self-assembled quantum dots by MOCVD Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. DOI: 10.1109/QELS.2008.4552691 |
0.556 |
|
| 2008 |
Wong PS, Liang BL, Nuntawong N, Tatebayashi J, Huffaker DL, Dorogan VG, Mazur YI, Salamo GJ. Photoluminescence comparison analysis of patterned and self-assembled quantum dots by MOCVD Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2008.4552182 |
0.556 |
|
| 2008 |
Kunets VP, Morgan TA, Mazur YI, Dorogan VG, Lytvyn PM, Ware ME, Guzun D, Shultz JL, Salamo GJ. Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy Journal of Applied Physics. 104. DOI: 10.1063/1.3020532 |
0.669 |
|
| 2008 |
Dorogan VG, Mazur YI, Lee JH, Wang ZM, Ware ME, Salamo GJ. Thermal peculiarity of AlAs-capped InAs quantum dots in a GaAs matrix Journal of Applied Physics. 104. DOI: 10.1063/1.3020521 |
0.704 |
|
| 2008 |
Mazur YI, Abu Waar ZY, Mishima TD, Lee JH, Tarasov GG, Liang BL, Dorogan VG, Ware ME, Wang ZM, Johnson MB, Salamo GJ. Spectroscopic observation of developing InAs quantum dots on GaAs ringlike-nanostructured templates Journal of Applied Physics. 104. DOI: 10.1063/1.2970149 |
0.692 |
|
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Mazur YI, Noda S, Tarasov GG, Dorogan VG, Salamo GJ, Bierwagen O, Masselink WT, Decuir EA, Manasreh MO. Excitonic band edges and optical anisotropy of InAsInP quantum dot structures Journal of Applied Physics. 103. DOI: 10.1063/1.2872781 |
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Dorogan VG, Mazur YI, Bierwagen O, Tarasov GG, Decuir EA, Noda S, Zhuchenko ZY, Manasreh MO, Masselink WT, Salamo GJ. Spectroscopic study of InAs/InP nanostructures Materials Research Society Symposium Proceedings. 1117: 54-59. |
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Dorogan VV, Brynzari VI, Korotchenkov GS, Kosyak VA. Selective photodiodes with two-coordinate sensitivity (quadrants) on the basis of InGaAsP quaternary compounds Proceedings of the International Conference On Microelectronics. 1: 431-434. |
0.327 |
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