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Jeehwan Kim, Ph.D. - Publications

Affiliations: 
2008 University of California, Los Angeles, Los Angeles, CA 
Area:
Materials Science Engineering
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39 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Aljarb A, Fu JH, Hsu CC, Chuu CP, Wan Y, Hakami M, Naphade DR, Yengel E, Lee CJ, Brems S, Chen TA, Li MY, Bae SH, Hsu WT, Cao Z, ... ... Kim J, et al. Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides. Nature Materials. PMID 32895505 DOI: 10.1038/S41563-020-0795-4  0.342
2020 Yeon H, Lin P, Choi C, Tan SH, Park Y, Lee D, Lee J, Xu F, Gao B, Wu H, Qian H, Nie Y, Kim S, Kim J. Alloying conducting channels for reliable neuromorphic computing. Nature Nanotechnology. PMID 32514010 DOI: 10.1038/S41565-020-0694-5  0.31
2020 Bae SH, Lu K, Han Y, Kim S, Qiao K, Choi C, Nie Y, Kim H, Kum HS, Chen P, Kong W, Kang BS, Kim C, Lee J, Baek Y, ... ... Kim J, et al. Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy. Nature Nanotechnology. PMID 32042164 DOI: 10.1038/S41565-020-0633-5  0.387
2020 Kum HS, Lee H, Kim S, Lindemann S, Kong W, Qiao K, Chen P, Irwin J, Lee JH, Xie S, Subramanian S, Shim J, Bae SH, Choi C, Ranno L, ... ... Kim J, et al. Heterogeneous integration of single-crystalline complex-oxide membranes. Nature. 578: 75-81. PMID 32025010 DOI: 10.1038/S41586-020-1939-Z  0.328
2018 Shim J, Bae SH, Kong W, Lee D, Qiao K, Nezich D, Park YJ, Zhao R, Sundaram S, Li X, Yeon H, Choi C, Kum H, Yue R, Zhou G, ... ... Kim J, et al. Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials. Science (New York, N.Y.). PMID 30309906 DOI: 10.1126/Science.Aat8126  0.326
2018 Kong W, Li H, Qiao K, Kim Y, Lee K, Nie Y, Lee D, Osadchy T, Molnar RJ, Gaskill DK, Myers-Ward RL, Daniels KM, Zhang Y, Sundram S, Yu Y, ... ... Kim J, et al. Polarity governs atomic interaction through two-dimensional materials. Nature Materials. PMID 30297812 DOI: 10.1038/S41563-018-0176-4  0.338
2018 Choi S, Tan SH, Li Z, Kim Y, Choi C, Chen PY, Yeon H, Yu S, Kim J. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations. Nature Materials. PMID 29358642 DOI: 10.1038/S41563-017-0001-5  0.315
2018 Shim J, Kang D, Kim Y, Kum H, Kong W, Bae S, Almansouri I, Lee K, Park J, Kim J. Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices Carbon. 133: 78-89. DOI: 10.1016/J.Carbon.2018.02.104  0.337
2017 Shim J, Jo SH, Kim M, Song YJ, Kim J, Park JH. Light-Triggered Ternary Device and Inverter Based on Heterojunction of van der Waals Materials. Acs Nano. PMID 28609089 DOI: 10.1021/Acsnano.7B02635  0.335
2017 Kim Y, Cruz SS, Lee K, Alawode BO, Choi C, Song Y, Johnson JM, Heidelberger C, Kong W, Choi S, Qiao K, Almansouri I, Fitzgerald EA, Kong J, Kolpak AM, ... ... Kim J, et al. Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Nature. 544: 340-343. PMID 28426001 DOI: 10.1038/Nature22053  0.398
2017 Bae SH, Zhou X, Kim S, Lee YS, Cruz SS, Kim Y, Hannon JB, Yang Y, Sadana DK, Ross FM, Park H, Kim J. Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene. Proceedings of the National Academy of Sciences of the United States of America. PMID 28373575 DOI: 10.1073/Pnas.1620176114  0.323
2017 Kidambi PR, Boutilier MS, Wang L, Jang D, Kim J, Karnik R. Selective Nanoscale Mass Transport across Atomically Thin Single Crystalline Graphene Membranes. Advanced Materials (Deerfield Beach, Fla.). PMID 28306180 DOI: 10.1002/Adma.201605896  0.339
2016 Shim J, Kim HS, Shim YS, Kang DH, Park HY, Lee J, Jeon J, Jung SJ, Song YJ, Jung WS, Lee J, Park S, Kim J, Lee S, Kim YH, et al. Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism. Advanced Materials (Deerfield Beach, Fla.). PMID 27159590 DOI: 10.1002/Adma.201506004  0.312
2016 Lee YS, Gershon T, Todorov TK, Wang W, Winkler MT, Hopstaken M, Gunawan O, Kim J. Atomic Layer Deposited Aluminum Oxide for Interface Passivation of Cu2ZnSn(S,Se)4Thin-Film Solar Cells Advanced Energy Materials. 6: 1600198. DOI: 10.1002/Aenm.201600198  0.345
2015 Kim J, Hong Z, Li G, Song TB, Chey J, Lee YS, You J, Chen CC, Sadana DK, Yang Y. 10.5% efficient polymer and amorphous silicon hybrid tandem photovoltaic cell. Nature Communications. 6: 6391. PMID 25736823 DOI: 10.1038/Ncomms7391  0.38
2015 Bayram C, Kim J, Cheng CW, Ott J, Reuter KB, Bedell SW, Sadana DK, Park H, Dimitrakopoulos C. Vertical thinking in blue light emitting diodes: GaN-on-graphene technology Proceedings of Spie - the International Society For Optical Engineering. 9364. DOI: 10.1117/12.2082897  0.357
2015 Bayram C, Ott J, Shiu KT, Cheng CW, Zhu Y, Kim J, Sadana DK, Razeghi M. Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100) Proceedings of Spie - the International Society For Optical Engineering. 9370. DOI: 10.1117/12.2082894  0.348
2014 Kim J, Bayram C, Park H, Cheng CW, Dimitrakopoulos C, Ott JA, Reuter KB, Bedell SW, Sadana DK. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene. Nature Communications. 5: 4836. PMID 25208642 DOI: 10.1038/Ncomms5836  0.389
2014 Kim J, Battaglia C, Charrière M, Hong A, Jung W, Park H, Ballif C, Sadana D. 9.4% efficient amorphous silicon solar cell on high aspect-ratio glass microcones. Advanced Materials (Deerfield Beach, Fla.). 26: 4082-6. PMID 24648188 DOI: 10.1002/Adma.201400186  0.339
2014 Lee IY, Park HY, Park JH, Yoo G, Lim MH, Park J, Rathi S, Jung WS, Kim J, Kim SW, Roh Y, Kim GH, Park JH. Poly-4-vinylphenol and poly(melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics. Nanoscale. 6: 3830-6. PMID 24584834 DOI: 10.1039/C3Nr06517K  0.339
2014 Bayram C, Ott JA, Shiu K, Cheng C, Zhu Y, Kim J, Razeghi M, Sadana DK. Gallium Nitride: Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy (Adv. Funct. Mater. 28/2014) Advanced Functional Materials. 24: 4491-4491. DOI: 10.1002/Adfm.201470185  0.356
2014 Bayram C, Ott JA, Shiu KT, Cheng CW, Zhu Y, Kim J, Razeghi M, Sadana DK. Cubic phase GaN on nano-grooved Si (100) via maskless selective area epitaxy Advanced Functional Materials. 24: 4492-4496. DOI: 10.1002/Adfm.201304062  0.391
2013 Kim J, Park H, Hannon JB, Bedell SW, Fogel K, Sadana DK, Dimitrakopoulos C. Layer-resolved graphene transfer via engineered strain layers. Science (New York, N.Y.). 342: 833-6. PMID 24179157 DOI: 10.1126/Science.1242988  0.337
2013 Yang SU, Choi SH, Lee J, Kim J, Jung WS, Yu H, Roh Y, Park JH. Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode Journal of Alloys and Compounds. 561: 228-230. DOI: 10.1016/J.Jallcom.2013.02.012  0.329
2012 Kim J, Hong AJ, Chandra B, Tulevski GS, Sadana DK. Engineering of contact resistance between transparent single-walled carbon nanotube films and a-Si:H single junction solar cells by gold nanodots. Advanced Materials (Deerfield Beach, Fla.). 24: 1899-902. PMID 22388916 DOI: 10.1002/Adma.201104677  0.378
2012 Kim J, Hong AJ, Nah JW, Shin B, Ross FM, Sadana DK. Three-dimensional a-Si:H solar cells on glass nanocone arrays patterned by self-assembled Sn nanospheres. Acs Nano. 6: 265-71. PMID 22148324 DOI: 10.1021/Nn203536X  0.394
2011 Kim J, Abou-Kandil AI, Hong AJ, Saad MM, Sadana DK, Chen TC. Efficiency enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p + a-SiC:H/transparent conducting oxide interface Applied Physics Letters. 99. DOI: 10.1063/1.3619185  0.358
2011 Tobail O, Kim J, Sadana D. Method to Determine the Collection Length in Field-Driven a-Si1-xGex:H Solar Cells Energy Procedia. 10: 213-219. DOI: 10.1016/J.Egypro.2011.10.180  0.358
2010 Kim J, Abou-Kandil A, Fogel K, Hovel H, Sadana DK. The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: offering ohmic contact to light trapping. Acs Nano. 4: 7331-6. PMID 21090670 DOI: 10.1021/Nn1023544  0.372
2010 Kim J, Inns D, Sadana DK. Investigation on critical failure thickness of hydrogenated/nonhydrogenated amorphous silicon films Journal of Applied Physics. 107: 73507. DOI: 10.1063/1.3369254  0.343
2010 Kim J, Inns D, Sadana DK. Cracking behavior of evaporated amorphous silicon films Thin Solid Films. 518: 4908-4910. DOI: 10.1016/J.Tsf.2010.03.161  0.312
2010 Kim J, Inns D, Fogel K, Sadana DK. Surface texturing of single-crystalline silicon solar cells using low density SiO2 films as an anisotropic etch mask Solar Energy Materials and Solar Cells. 94: 2091-2093. DOI: 10.1016/J.Solmat.2010.06.026  0.38
2009 Reznicek A, Adam TN, Zhu Z, Fogel KE, Li J, Tai L, Kulkami P, Kim J, Bedell SW, Sadana DK. Epitaxial growth and defect generation in in-situ doped high percentage SiGe The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.H-1-1  0.307
2008 Liu J, Lu TM, Kim J, Lai K, Tsui DC, Xie YH. The proximity effect of the regrowth interface on two-dimensional electron density in strained Si Applied Physics Letters. 92. DOI: 10.1063/1.2899937  0.342
2008 Kim J, Lee JY, Xie Y. Fabrication of dislocation-free Si films under uniaxial tension on porous Si compliant substrates Thin Solid Films. 516: 7599-7603. DOI: 10.1016/J.Tsf.2008.03.044  0.562
2007 Kim J, Li B, Xie Y. A method for fabricating dislocation-free tensile-strained SiGe films via the oxidation of porous Si substrates Applied Physics Letters. 91: 252108. DOI: 10.1063/1.2827194  0.568
2007 Lu TM, Liu J, Kim J, Lai K, Tsui DC, Xie YH. Capacitively induced high mobility two-dimensional electron gas in undoped Si Si1-x Gex heterostructures with atomic-layer-deposited dielectric Applied Physics Letters. 90. DOI: 10.1063/1.2736273  0.375
2006 Kim J, Xie Y. Fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates Applied Physics Letters. 89: 152117. DOI: 10.1063/1.2360930  0.567
2006 Zhao ZM, Yoon TS, Feng W, Li BY, Kim JH, Liu J, Hulko O, Xie YH, Kim HM, Kim KB, Kim HJ, Wang KL, Ratsch C, Caflisch R, Ryu DY, et al. The challenges in guided self-assembly of Ge and InAs quantum dots on Si Thin Solid Films. 508: 195-199. DOI: 10.1016/J.Tsf.2005.08.407  0.444
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