Junjun Li, Ph.D. - Publications
Affiliations: | 2004 | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
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2010 | Cilento T, Schenkel M, Yun C, Mishra R, Li J, Chatty KV, Gauthier R. Simulation of ESD protection devices in an advanced CMOS technology using a TCAD workbench based on an ESD calibration methodology Microelectronics Reliability. 50: 1367-1372. DOI: 10.1016/J.Microrel.2010.07.132 | 0.353 | |||
2009 | Alvarez D, Chatty KV, Russ C, Abou-Khalil MJ, Li J, Gauthier R, Esmark K, Halbach R, Seguin C. Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology. Microelectronics Reliability. 49: 1417-1423. DOI: 10.1016/J.Microrel.2009.06.051 | 0.307 | |||
2006 | Li J, Joshi S, Barnes R, Rosenbaum E. Compact modeling of on-chip ESD protection devices using Verilog-A Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 25: 1047-1063. DOI: 10.1109/Tcad.2005.855948 | 0.549 | |||
2006 | Alvarez D, Abou-Khalil MJ, Russ C, Chatty KV, Gauthier R, Kontos D, Li J, Seguin C, Halbach R. Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant Microelectronics Reliability. 46: 1597-1602. DOI: 10.1016/J.Microrel.2006.07.041 | 0.304 | |||
2005 | Li J, Li H, Barnes R, Rosenbaum E. Comprehensive study of drain breakdown in MOSFETs Ieee Transactions On Electron Devices. 52: 1180-1186. DOI: 10.1109/Ted.2005.848858 | 0.479 | |||
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