| Year |
Citation |
Score |
| 2007 |
Saripalli YN, Pei L, Biggerstaff T, Ramachandran S, Duscher GJ, Johnson MAL, Zeng C, Dandu K, Jin Y, Barlage DW. Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications Applied Physics Letters. 90: 204106. DOI: 10.1063/1.2741123 |
0.383 |
|
| 2007 |
Jin Y, Zeng C, Ma L, Barlage D. Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs Solid-State Electronics. 51: 347-353. DOI: 10.1016/J.Sse.2007.01.023 |
0.532 |
|
| 2006 |
Ma L, Jin Y, Zeng C, Dandu K, Johnson M, Barlage DW. TCAD Modeling and Simulation of Sub-100nm Gate Length Silicon and GaN based SOI MOSFETs Mrs Proceedings. 913. DOI: 10.1557/Proc-0913-D05-09 |
0.688 |
|
| 2006 |
Jin Y, Ma L, Zeng C, Dandu K, Barlage DW. Structure and Process Parameter Optimization for Sub-10nm Gate Length Fully Depleted N-Type SOI MOSFETs by TCAD Modeling and Simulation Mrs Proceedings. 913. DOI: 10.1557/Proc-0913-D01-10 |
0.698 |
|
| 2006 |
Wang D, Park M, Saripalli YN, Johnson MAL, Zeng C, Barlage DW, Long JP. Optical spectroscopic analysis of selected area epitaxially regrown n + gallium nitride Journal of Applied Physics. 99. DOI: 10.1063/1.2204755 |
0.322 |
|
| 2006 |
Saripalli YN, Zeng C, Long JP, Barlage DW, Johnson MAL, Braddock D. Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts Journal of Crystal Growth. 287: 562-565. DOI: 10.1016/J.Jcrysgro.2005.10.075 |
0.484 |
|
| 2005 |
Saripalli Y, Zeng C, Jin Y, Long JP, Grenko JA, Dandu K, Johnson MAL, Barlage DW. Low Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETs Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff16-01 |
0.632 |
|
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