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Wei Huang - Publications

Affiliations: 
2011-2016 Chemistry Department Tsinghua University, Beijing, Beijing Shi, China 
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23 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Xia CH, Han XT, Zhang X, Zhu ZB, Guo J, Cui HL, Jiang HX, Huang WJ, Chen GZ, Liu YN, Liu WJ. Yiqihuoxue Formula Activates Autophagy and Offers Renoprotection in a Rat Model of Adenine-Induced Kidney Disease. Evidence-Based Complementary and Alternative Medicine : Ecam. 2019: 3423981. PMID 31949466 DOI: 10.1155/2019/3423981  0.315
2019 Ke S, Ye Y, Wu J, Liang D, Cheng B, Li Z, Ruan Y, Zhang X, Huang W, Wang J, Xu J, Li C, Chen S. Low-Temperature Fabrication of Wafer-Bonded Ge/Si p-i-n Photodiodes by Layer Exfoliation and Nanosecond-Pulse Laser Annealing Ieee Transactions On Electron Devices. 66: 1353-1360. DOI: 10.1109/Ted.2019.2893273  0.316
2018 Chen P, Xiao H, Huang W, Xu DQ, Guo YM, Wang X, Wang XH, DiSanto ME, Zhang XH. Testosterone regulates myosin II isoforms expression and functional activity in the rat prostate. The Prostate. PMID 30073674 DOI: 10.1002/pros.23702  0.343
2018 Ke S, Ye Y, Lin S, Ruan Y, Zhang X, Huang W, Wang J, Li C, Chen S. Low-temperature oxide-free silicon and germanium wafer bonding based on a sputtered amorphous Ge Applied Physics Letters. 112: 41601. DOI: 10.1063/1.4996800  0.321
2018 Ke S, Lin S, Ye Y, Mao D, Huang W, Xu J, Li C, Chen S. Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering Applied Surface Science. 434: 433-439. DOI: 10.1016/J.Apsusc.2017.10.150  0.308
2018 Ke S, Ye Y, Wu J, Ruan Y, Zhang X, Huang W, Wang J, Xu J, Li C, Chen S. Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device Journal of Materials Science. 54: 2406-2416. DOI: 10.1007/S10853-018-3015-8  0.31
2017 Li J, Schwarz WHE, Huang W, Jiang N, Yang P. The Diversity of Chemical Bonding and Oxidation States in MS4 Molecules of Group-8 Elements. Chemistry (Weinheim An Der Bergstrasse, Germany). PMID 28516506 DOI: 10.1002/Chem.201701117  0.615
2017 Liu JB, Chen GP, Huang W, Clark DL, Schwarz WH, Li J. Bonding trends across the series of tricarbonato-actinyl anions [(AnO2)(CO3)3](4-) (An = U-Cm): the plutonium turn. Dalton Transactions (Cambridge, England : 2003). PMID 28154870 DOI: 10.1039/C6Dt03953G  0.66
2017 Ke S, Lin S, Mao D, Ji X, Huang W, Xu J, Li C, Chen S. Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode Ieee Transactions On Electron Devices. 64: 2556-2563. DOI: 10.1109/Ted.2017.2696579  0.318
2017 Ke S, Lin S, Huang W, Wang J, cheng B, Liang K, Li C, Chen S. Geiger mode theoretical study of a wafer-bonded Ge on Si single-photon avalanche photodiode Journal of Physics D. 50: 55106. DOI: 10.1088/1361-6463/Aa52B9  0.312
2017 Mao D, Ke S, Lai S, Ruan Y, Huang D, Lin S, Chen S, Li C, Wang J, Huang W. Innovative Ge–SiO2 bonding based on an intermediate ultra-thin silicon layer Journal of Materials Science: Materials in Electronics. 28: 10262-10269. DOI: 10.1007/S10854-017-6793-X  0.315
2016 Huang W, Xu WH, Schwarz WH, Li J. On the Highest Oxidation States of Metal Elements in MO4 Molecules (M = Fe, Ru, Os, Hs, Sm, and Pu). Inorganic Chemistry. PMID 27074099 DOI: 10.1021/acs.inorgchem.6b00442  0.581
2016 Huang W, Xing DH, Lu JB, Long B, Schwarz WH, Li J. How Far Can Density Functional Approximations (DFA) Fail? The Extreme Case of FeO4 Species. Journal of Chemical Theory and Computation. PMID 26938575 DOI: 10.1021/Acs.Jctc.5B01040  0.634
2016 Feng H, Gu J, Gou F, Huang W, Gao C, Chen G, Long Y, Zhou X, Yang M, Liu S, Lü S, Luo Q, Xu Y. High Glucose and Lipopolysaccharide Prime NLRP3 Inflammasome via ROS/TXNIP Pathway in Mesangial Cells. Journal of Diabetes Research. 2016: 6973175. PMID 26881256 DOI: 10.1155/2016/6973175  0.323
2016 Lin G, Yi X, Li C, Chen N, Zhang L, Chen S, Huang W, Wang J, Xiong X, Sun J. Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate Applied Physics Letters. 109. DOI: 10.1063/1.4964385  0.324
2015 Wang C, Li C, Wei J, Lin G, Lan X, Chi X, Lu C, Huang Z, Chen C, Huang W, Lai H, Chen S. High-Performance Ge p-n Photodiode Achieved With Preannealing and Excimer Laser Annealing Ieee Photonics Technology Letters. 27: 1485-1488. DOI: 10.1109/Lpt.2015.2426016  0.301
2014 Huang W, Yang C, Nan Q, Gao C, Feng H, Gou F, Chen G, Zhang Z, Yan P, Peng J, Xu Y. The proteasome inhibitor, MG132, attenuates diabetic nephropathy by inhibiting SnoN degradation in vivo and in vitro. Biomed Research International. 2014: 684765. PMID 25003128 DOI: 10.1155/2014/684765  0.324
2014 Zhou X, Gao C, Huang W, Yang M, Chen G, Jiang L, Gou F, Feng H, Ai N, Xu Y. High glucose induces sumoylation of Smad4 via SUMO2/3 in mesangial cells. Biomed Research International. 2014: 782625. PMID 24971350 DOI: 10.1155/2014/782625  0.327
2014 Liu H, Wang P, Qi D, Li X, Han X, Wang C, Chen S, Li C, Huang W. Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height Applied Physics Letters. 105: 192103. DOI: 10.1063/1.4901421  0.319
2013 Huang W, Xu WH, Su J, Schwarz WH, Li J. Oxidation states, geometries, and electronic structures of plutonium tetroxide PuO4 isomers: is octavalent Pu viable? Inorganic Chemistry. 52: 14237-45. PMID 24274785 DOI: 10.1021/Ic402170Q  0.608
2013 Huang W, Xu L, Zhou X, Gao C, Yang M, Chen G, Zhu J, Jiang L, Gan H, Gou F, Feng H, Peng J, Xu Y. High glucose induces activation of NF-κB inflammatory signaling through IκBα sumoylation in rat mesangial cells. Biochemical and Biophysical Research Communications. 438: 568-74. PMID 23911785 DOI: 10.1016/j.bbrc.2013.07.065  0.323
2012 Zheng Y, Liu G, Li C, Huang W, Chen S, Lai H. Physical and electrical properties of thermally oxidized dielectrics on Si-capped Ge-on-Si substrate Journal of Vacuum Science & Technology B. 30: 11202. DOI: 10.1116/1.3668115  0.315
2012 Li C, Huang S, Lu W, Xu J, Huang W, Sun Z, Lai H, Chen S. Properties of ultra‐thin SiGe‐on‐insulator materials prepared by Ge condensation method Physica Status Solidi (C). 9: 2027-2030. DOI: 10.1002/Pssc.201200038  0.315
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