Siddhartha Ghosh, Ph.D.
Affiliations: | 2003 | University of Michigan, Ann Arbor, Ann Arbor, MI |
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semiconductorsGoogle:
"Siddhartha Ghosh"Mean distance: 16.24
Parents
Sign in to add mentor| Pallab K. Bhattacharya | grad student | 2003 | University of Michigan | |
| (Growth of indium gallium arsenide/gallium arsenide self-organized quantum dots and their application to high-speed lasers and spin-polarized light sources.) | ||||
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Publications
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| Narayanan S, Dutta D, Arora N, et al. (2017) Phytaspase-loaded, Mn-doped ZnS quantum dots when embedded into chitosan nanoparticles leads to improved chemotherapy of HeLa cells using in cisplatin. Biotechnology Letters |
| Saha AK, Sharma P, Sohn HB, et al. (2013) Fe Doped CdTeS Magnetic Quantum Dots for Bioimaging. Journal of Materials Chemistry. B, Materials For Biology and Medicine. 1: 6312-6320 |
| Banerjee K, Huang J, Ghosh S, et al. (2011) Surface study of thioacetamide and zinc sulfide passivated long wavelength infrared type-II strained layer superlattice Proceedings of Spie - the International Society For Optical Engineering. 8012 |
| Ray M, Hossain SM, Klie RF, et al. (2010) Free standing luminescent silicon quantum dots: evidence of quantum confinement and defect related transitions. Nanotechnology. 21: 505602 |
| Ghosh S, Banerjee K, Duan Q, et al. (2010) Dual-carrier multiplication high-gain MWIR strain layer superlattice impact ionization engineered avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 7660 |
| Banerjee K, Ghosh S, Plis E, et al. (2010) Study of short-and long-term effectiveness of ammonium sulfide as surface passivation for InAs/GaSb superlattices using X-ray photoelectron spectroscopy Journal of Electronic Materials. 39: 2210-2214 |
| Banerjee K, Ghosh S, Mallick S, et al. (2009) Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode Applied Physics Letters. 94 |
| Banerjee K, Ghosh S, Mallick S, et al. (2009) Electrical characterization of different passivation treatments for long-wave infrared InAs/GaSb strained layer superlattice photodiodes Journal of Electronic Materials. 38: 1944-1947 |
| Banerjee K, Mallick S, Ghosh S, et al. (2008) Hole initiated mid wave infrared InAs/GaSb strained layer superlattice avalanche photodiode Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 298-299 |
| Plis E, Kim HS, Bishop G, et al. (2008) Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors Applied Physics Letters. 93 |