Enjun Xiao, Ph.D.

Affiliations: 
2003 University of Central Florida, Orlando, FL, United States 
Area:
Electronics and Electrical Engineering
Google:
"Enjun Xiao"

Parents

Sign in to add mentor
Jiann S. Yuan grad student 2003 University of Central Florida
 (CMOS RF circuit design and reliability for wireless communications.)
BETA: Related publications

Publications

You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect.

Kuang W, Xiao E, Ibarra CM, et al. (2007) Design asynchronous circuits for soft error tolerance Proceedings 2007 Ieee International Conference On Integrated Circuit Design and Technology, Icicdt. 221-225
Yu C, Yuan JS, Shen J, et al. (2006) Study of electrical stress effect on SiGe HBT low-noise amplifier performance by simulation Ieee Transactions On Device and Materials Reliability. 6: 550-554
Yu C, Yuan JS, Xiao E. (2006) Dynamic voltage stress effects on nMOS varactor Microelectronics Reliability. 46: 1812-1816
Xiao E, Ghosh PP. (2005) Stress induced performance degradation in LC oscillators Proceedings of the Ieee International Frequency Control Symposium and Exposition. 2005: 559-561
Yu C, Xiao E, Yuan JS. (2005) Voltage stress-induced hot carrier effects on SiGe HBT VCO Microelectronics Reliability. 45: 1402-1405
Xiao E, Ghosh PP, Yu C, et al. (2005) Hot carrier and soft breakdown effects on LNA performance for ultra wideband communications Microelectronics Reliability. 45: 1382-1385
Xiao E, Zhu P, Yuan JS, et al. (2005) Analysis and modeling of LNA circuit reliability Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 69-72
Xiao E. (2005) Hot carrier effect on CMOS RF amplifiers Ieee International Reliability Physics Symposium Proceedings. 680-681
Xiao E, Yuan JS, Yang H. (2004) CMOS RF and DC Reliability Subject to Hot Carrier Stress and Oxide Soft Breakdown Ieee Transactions On Device and Materials Reliability. 4: 92-98
Yang H, Yuan JS, Liu Y, et al. (2003) Effect of gate-oxide breakdown on rf performance Ieee Transactions On Device and Materials Reliability. 3: 93-97
See more...