Azam M. Beg, Ph.D.
Affiliations: | 2005 | Mississippi State University, Starkville, MS, United States |
Area:
Electronics and Electrical Engineering, Computer ScienceGoogle:
"Azam Beg"Parents
Sign in to add mentor| Yul Chu | grad student | 2005 | Mississippi State University | |
| (Improving instruction fetch rate with code pattern cache for superscalar architecture.) | ||||
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Publications
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| Beg A. (2020) Accurate Calculation of Unreliability of CMOS Logic Cells and Circuits Journal of Circuits, Systems, and Computers. 2050202 |
| Beg A, Beg A. (2018) Using open technologies for automatically creating question‐and‐answer sets for engineering MOOCs Computer Applications in Engineering Education. 26: 617-625 |
| Alsadoon A, Prasad PWC, Beg A. (2017) Using Software Simulators to Enhance the Learning of Digital Logic Design for the Information Technology Students. European Journal of Engineering Education. 42: 533-546 |
| Beg A. (2017) Optimising nanometric CMOS logic cells for low-power, low-energy, and noise margin International Journal of Electronics. 104: 1120-1131 |
| Prasad PWC, Alsadoon A, Beg A, et al. (2016) Using simulators for teaching computer organization and architecture Computer Applications in Engineering Education. 24: 215-224 |
| Beg A, Prasad PWC. (2016) Incorporating hardware and software features into a prediction model for processor-system throughput Computer Applications in Engineering Education. 24: 169-179 |
| Beg A, Awwad F, Ibrahim W, et al. (2015) On the reliability estimation of nano-circuits using neural networks Microprocessors and Microsystems. 39: 674-685 |
| Beg A. (2015) Automating the sizing of transistors in CMOS gates for low-power and high-noise margin operation International Journal of Circuit Theory and Applications. 43: 1637-1654 |
| Beg A. (2015) A web-based method for building and simulating standard cell circuits - A classroom application Computer Applications in Engineering Education. 23: 304-313 |
| Ibrahim W, Beiu V, Beg A. (2012) Optimum reliability sizing for complementary metal oxide semiconductor gates Ieee Transactions On Reliability. 61: 675-686 |