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Steven A. Ringel

Affiliations: 
Ohio State University, Columbus, Columbus, OH 
Area:
Electronics and Electrical Engineering, Computer Science
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"Steven Ringel"
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Parents

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Children

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John A. Carlin grad student 2001 Ohio State
Adrian Hierro grad student 2001 Ohio State
Robert J. Kaplar grad student 2002 Ohio State
Carrie L. Andre grad student 2004 Ohio State
John J. Boeckl grad student 2005 Ohio State
Ojin Kwon grad student 2005 Ohio State
Aaron R. Arehart grad student 2009 Ohio State
Andrew M. Carlin grad student 2012 Ohio State
Krishna Swaminathan grad student 2012 Ohio State

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Publications

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Lepkowski DL, Kasher T, Boyer JT, et al. (2020) The Critical Role of AlInP Window Design in III–V Rear-Emitter Solar Cells Ieee Journal of Photovoltaics. 10: 758-764
Zhang Y, Chen Z, Li W, et al. (2020) Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Journal of Applied Physics. 127: 215707
Kalarickal NK, Xia Z, McGlone JF, et al. (2020) High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer Journal of Applied Physics. 127: 215706
Ghadi H, McGlone JF, Jackson CM, et al. (2020) Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition Apl Materials. 8: 021111
Feng Z, Bhuiyan AFMAU, Xia Z, et al. (2020) Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga 2 O 3 Physica Status Solidi-Rapid Research Letters. 14: 2000145
Zhang Y, Xia Z, Mcglone J, et al. (2019) Evaluation of Low-Temperature Saturation Velocity in $\beta$ -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors Ieee Transactions On Electron Devices. 66: 1574-1578
Sun W, Joh J, Krishnan S, et al. (2019) Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs Ieee Transactions On Electron Devices. 66: 890-895
Joishi C, Zhang Y, Xia Z, et al. (2019) Breakdown Characteristics of $\beta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors Ieee Electron Device Letters. 40: 1241-1244
Xia Z, Xue H, Joishi C, et al. (2019) $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Ieee Electron Device Letters. 40: 1052-1055
Lepkowski DL, Boyer JT, Chmielewski DJ, et al. (2019) Investigation of Rear-Emitter GaAs0.75P0.25 Top Cells for Application to III–V/Si Tandem Photovoltaics Ieee Journal of Photovoltaics. 9: 1644-1651
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