Steven A. Ringel
Affiliations: | Ohio State University, Columbus, Columbus, OH |
Area:
Electronics and Electrical Engineering, Computer ScienceGoogle:
"Steven Ringel"Children
Sign in to add traineeJohn A. Carlin | grad student | 2001 | Ohio State |
Adrian Hierro | grad student | 2001 | Ohio State |
Robert J. Kaplar | grad student | 2002 | Ohio State |
Carrie L. Andre | grad student | 2004 | Ohio State |
John J. Boeckl | grad student | 2005 | Ohio State |
Ojin Kwon | grad student | 2005 | Ohio State |
Aaron R. Arehart | grad student | 2009 | Ohio State |
Andrew M. Carlin | grad student | 2012 | Ohio State |
Krishna Swaminathan | grad student | 2012 | Ohio State |
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Publications
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Lepkowski DL, Kasher T, Boyer JT, et al. (2020) The Critical Role of AlInP Window Design in III–V Rear-Emitter Solar Cells Ieee Journal of Photovoltaics. 10: 758-764 |
Zhang Y, Chen Z, Li W, et al. (2020) Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Journal of Applied Physics. 127: 215707 |
Kalarickal NK, Xia Z, McGlone JF, et al. (2020) High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer Journal of Applied Physics. 127: 215706 |
Ghadi H, McGlone JF, Jackson CM, et al. (2020) Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition Apl Materials. 8: 021111 |
Feng Z, Bhuiyan AFMAU, Xia Z, et al. (2020) Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga 2 O 3 Physica Status Solidi-Rapid Research Letters. 14: 2000145 |
Zhang Y, Xia Z, Mcglone J, et al. (2019) Evaluation of Low-Temperature Saturation Velocity in |
Sun W, Joh J, Krishnan S, et al. (2019) Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs Ieee Transactions On Electron Devices. 66: 890-895 |
Joishi C, Zhang Y, Xia Z, et al. (2019) Breakdown Characteristics of $\beta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors Ieee Electron Device Letters. 40: 1241-1244 |
Xia Z, Xue H, Joishi C, et al. (2019) $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Ieee Electron Device Letters. 40: 1052-1055 |
Lepkowski DL, Boyer JT, Chmielewski DJ, et al. (2019) Investigation of Rear-Emitter GaAs0.75P0.25 Top Cells for Application to III–V/Si Tandem Photovoltaics Ieee Journal of Photovoltaics. 9: 1644-1651 |