Hong-Jyh Li, Ph.D.
Affiliations: | 2002 | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical EngineeringGoogle:
"Hong-Jyh Li"Parents
Sign in to add mentor| Sanjay K. Banerjee | grad student | 2002 | UT Austin | |
| (Ultra-shallow junction formation: Co-implantation and rapid thermal annealing.) | ||||
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Publications
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| Ablikim M, Achasov MN, Ahmed S, et al. (2018) Measurement of the Absolute Branching Fraction of the Inclusive Decay Λ_{c}^{+}→Λ+X. Physical Review Letters. 121: 062003 |
| Shen XZ, Qu F, Li CB, et al. (2018) Comparison between a novel human cortical bone screw and bioabsorbable interference screw for graft fixation of ACL reconstruction. European Review For Medical and Pharmacological Sciences. 22: 111-118 |
| Bei WJ, Wang K, Li HL, et al. (2017) Safe Hydration Volume to Prevent Contrast-Induced Acute Kidney Injury and Worsening Heart Failure in Patients with Heart Failure and Preserved Ejection Fraction Following Cardiac Catheterization. Journal of Cardiovascular Pharmacology |
| Ablikim M, Achasov MN, Ahmed S, et al. (2017) Evidence of Two Resonant Structures in e^{+}e^{-}→π^{+}π^{-}h_{c}. Physical Review Letters. 118: 092002 |
| Ablikim M, Achasov MN, Ahmed S, et al. (2017) Precise Measurement of the e^{+}e^{-}→π^{+}π^{-}J/ψ Cross Section at Center-of-Mass Energies from 3.77 to 4.60 GeV. Physical Review Letters. 118: 092001 |
| Ablikim M, Achasov MN, Ai XC, et al. (2017) Amplitude Analysis of the Decays η^{'}→π^{+}π^{-}π^{0} and η^{'}→π^{0}π^{0}π^{0}. Physical Review Letters. 118: 012001 |
| Ablikim M, Achasov MN, Ahmed S, et al. (2016) Measurement of Singly Cabibbo Suppressed Decays Λ_{c}^{+}→pπ^{+}π^{-} and Λ_{c}^{+}→pK^{+}K^{-}. Physical Review Letters. 117: 232002 |
| Guo XS, Lin KY, Li HL, et al. (2016) Preprocedural High-Sensitivity C-Reactive Protein Predicts Contrast-Induced Nephropathy and Long-Term Outcome After Coronary Angiography. Angiology |
| Li HJ, Bennett J, Zeitzoff P, et al. (2003) Indium out-diffusion from silicon during rapid thermal annealing Ieee Electron Device Letters. 24: 221-223 |