Francis Calmon
Affiliations: | Université de Sherbrooke, Sherbrooke, Québec, Canada |
Area:
Electronics and Electrical EngineeringGoogle:
"Francis Calmon"
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Publications
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| Albuquerque TCd, Issartel D, Clerc R, et al. (2020) Indirect avalanche event detection of Single Photon Avalanche Diode implemented in CMOS FDSOI technology Solid-State Electronics. 163: 107636 |
| Vignetti MM, Calmon F, Pittet P, et al. (2018) 3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for charged particle detection Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 881: 53-59 |
| Thomas D, Puyoo E, Le Berre M, et al. (2017) Investigation of the in-plane and out-of-plane electrical properties of metallic nanoparticles in dielectric matrix thin films elaborated by atomic layer deposition. Nanotechnology. 28: 455602 |
| Vignetti M, Calmon F, Lesieur P, et al. (2017) Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology Solid-State Electronics. 128: 163-171 |
| Ma Y, Fakri-Bouchet L, Calmon F, et al. (2016) Electrothermal Modeling for 3-D Nanoscale Circuit Substrates: Noise Ieee Transactions On Components, Packaging and Manufacturing Technology. 6: 1040-1050 |
| Gontrand C, Labiod S, Bella M, et al. (2015) Towards 3D Integration of Monolithic X or Γ Ray Detectors Under Possible Electromagnetic Perturbations or Malfunctions International Review On Modelling and Simulations. 8: 63-74 |
| El Hajjam KG, Bounouar MA, Baboux N, et al. (2015) Tunnel junction engineering for optimized metallic single-electron transistor Ieee Transactions On Electron Devices. 62: 2998-3003 |
| Vignetti MM, Calmon F, Cellier R, et al. (2015) Preliminary simulation study of a coincidence Avalanche Pixel Sensor Journal of Instrumentation. 10 |
| Guillaume N, Puyoo E, Le Berre M, et al. (2015) Study and characterization of the irreversible transformation of electrically stressed planar Ti/TiOx/Ti junctions Journal of Applied Physics. 118: 144502 |
| Abouelatta-Ebrahim M, Dahmani R, Valorge O, et al. (2015) Corrigendum to Modelling of through silicon via and devices electromagnetic coupling Microelectron. J. 42 (2011) 316-324 Microelectronics Journal. 46: 1103 |