Shiying Xiong, Ph.D. - Publications
Affiliations: | University of California, Berkeley, Berkeley, CA, United States |
Area:
nanoscale scienceYear | Citation | Score | |||
---|---|---|---|---|---|
2005 | Xiong S, King TJ, Bokor J. A comparison study of symmetric ultrathin-body double-gate devices with metal source/drain and doped source/drain Ieee Transactions On Electron Devices. 52: 1859-1867. DOI: 10.1109/Ted.2005.852893 | 0.541 | |||
2005 | Xiong S, Bokor J. Structural optimization of SUTBDG devices for low-power applications Ieee Transactions On Electron Devices. 52: 360-366. DOI: 10.1109/Ted.2005.843869 | 0.541 | |||
2005 | Xiong S, King TJ, Bokor J. Study of the extrinsic parasitics in nano-scale transistors Semiconductor Science and Technology. 20: 652-657. DOI: 10.1088/0268-1242/20/6/029 | 0.511 | |||
2004 | Xiong S, Bokor J, Xiang Q, Fisher P, Dudley I, Rao P, Wang H, En B. Is gate line edge roughness a first-order issue in affecting the performance of deep sub-micro bulk MOSFET devices? Ieee Transactions On Semiconductor Manufacturing. 17: 357-361. DOI: 10.1109/Tsm.2004.831560 | 0.552 | |||
2004 | Xiong S, Bokor J. A simulation study of gate line edge roughness effects on doping profiles of short-channel MOSFET devices Ieee Transactions On Electron Devices. 51: 228-232. DOI: 10.1109/Ted.2003.821563 | 0.508 | |||
2003 | Xiong S, Bokor J. Sensitivity of Double-Gate and FinFET Devices to Process Variations Ieee Transactions On Electron Devices. 50: 2255-2261. DOI: 10.1109/Ted.2003.818594 | 0.518 | |||
Show low-probability matches. |