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Yi-Chiau Huang, Ph.D. - Publications

Affiliations: 
2000 Cornell University, Ithaca, NY, United States 
Area:
surface chemistry at the atomic scale using scanned probe microscopy
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16 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Xu S, Han K, Huang YC, Lee KH, Kang Y, Masudy-Panah S, Wu Y, Lei D, Zhao Y, Wang H, Tan CS, Gong X, Yeo YC. Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band. Optics Express. 27: 26924-26939. PMID 31674563 DOI: 10.1364/Oe.27.026924  0.377
2019 Xu S, Wang W, Huang YC, Dong Y, Masudy-Panah S, Wang H, Gong X, Yeo YC. High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate. Optics Express. 27: 5798-5813. PMID 30876175 DOI: 10.1364/Oe.27.005798  0.392
2017 Huang Y, Tsou Y, Huang C, Huang C, Lan H, Liu CW, Huang Y, Chung H, Chang C, Chu SS, Kuppurao S. High-Mobility CVD-Grown Ge/Strained Ge 0.9 Sn 0.1 /Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness Ieee Transactions On Electron Devices. 64: 2498-2504. DOI: 10.1109/Ted.2017.2695664  0.38
2017 Morea M, Brendel CE, Zang K, Suh J, Fenrich CS, Huang Y, Chung H, Huo Y, Kamins TI, Saraswat KC, Harris JS. Passivation of multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors Applied Physics Letters. 110: 091109. DOI: 10.1063/1.4977878  0.386
2016 Lin CY, Huang CH, Huang SH, Chang CC, Liu CW, Huang YC, Chung H, Chang CP. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells Applied Physics Letters. 109. DOI: 10.1063/1.4961939  0.313
2016 Shang CK, Wang V, Chen R, Gupta S, Huang YC, Pao JJ, Huo Y, Sanchez E, Kim Y, Kamins TI, Harris JS. Dry-wet digital etching of Ge1-xSnx Applied Physics Letters. 108. DOI: 10.1063/1.4941800  0.492
2014 Chen R, Gupta S, Huang YC, Huo Y, Rudy CW, Sanchez E, Kim Y, Kamins TI, Saraswat KC, Harris JS. Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics. Nano Letters. 14: 37-43. PMID 24299070 DOI: 10.1021/Nl402815V  0.363
2014 Medikonda M, Muthinti GR, Vasić R, Adam TN, Reznicek A, Wormington M, Malladi G, Kim Y, Huang YC, Diebold AC. Optical properties of pseudomorphic Ge1-xSnx (x = 0 to 0.11) alloys on Ge(001) Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4901254  0.389
2013 Gupta S, Chen R, Huang YC, Kim Y, Sanchez E, Harris JS, Saraswat KC. Highly selective dry etching of germanium over germanium-tin (Ge(1-x)Sn(x)): a novel route for Ge(1-x)Sn(x) nanostructure fabrication. Nano Letters. 13: 3783-90. PMID 23834495 DOI: 10.1021/Nl4017286  0.3
2013 Chen R, Huang YC, Gupta S, Lin AC, Sanchez E, Kim Y, Saraswat KC, Kamins TI, Harris JS. Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing Journal of Crystal Growth. 365: 29-34. DOI: 10.1016/J.Jcrysgro.2012.12.014  0.385
1999 Flidr J, Huang YC, Hines MA. An atomistic mechanism for the production of two- and three-dimensional etch hillocks on Si(111) surfaces Journal of Chemical Physics. 111: 6970-6981. DOI: 10.1063/1.479990  0.771
1999 Newton TA, Huang YC, Lepak LA, Hines MA. The site-specific reactivity of isopropanol in aqueous silicon etching: Controlling morphology with surface chemistry Journal of Chemical Physics. 111: 9125-9128. DOI: 10.1063/1.479386  0.809
1999 Flidr J, Huang YC, Newton TA, Hines MA. The formation of etch hillocks during step-flow etching of Si(111) Chemical Physics Letters. 302: 85-90. DOI: 10.1016/S0009-2614(99)00121-9  0.738
1998 Huang YC, Flidr J, Newton TA, Hines MA. Effects of dynamic step-step repulsion and autocatalysis on the morphology of etched Si(111) surfaces Physical Review Letters. 80: 4462-4465. DOI: 10.1103/Physrevlett.80.4462  0.737
1998 Huang YC, Flidr J, Newton TA, Hines MA. Dynamic repulsion of surface steps during step flow etching: Controlling surface roughness with chemistry Journal of Chemical Physics. 109: 5025-5035. DOI: 10.1063/1.477115  0.745
1998 Flidr J, Huang YC, Newton TA, Hines MA. Extracting site-specific reaction rates from steady state surface morphologies: Kinetic Monte Carlo simulations of aqueous Si(111) etching Journal of Chemical Physics. 108: 5542-5553. DOI: 10.1063/1.475944  0.742
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