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Neil Goldsman - Publications

Affiliations: 
Electrical and Computer Engineering University of Maryland, College Park, College Park, MD 
Website:
https://ece.umd.edu/clark/faculty/398/Neil-Goldsman
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Year Citation  Score
2019 Akturk A, McGarrity JM, Goldsman N, Lichtenwalner DJ, Hull B, Grider D, Wilkins R. Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices Ieee Transactions On Nuclear Science. 66: 1828-1832. DOI: 10.1109/Tns.2019.2919334  0.615
2019 Darmody C, Goldsman N. Incomplete ionization in aluminum-doped 4H-silicon carbide Journal of Applied Physics. 126: 145701. DOI: 10.1063/1.5120707  0.338
2018 Akturk A, McGarrity JM, Goldsman N, Lichtenwalner D, Hull B, Grider D, Wilkins R. Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes Ieee Transactions On Nuclear Science. 65: 1248-1254. DOI: 10.1109/Tns.2018.2833741  0.62
2018 Darmody C, Goldsman N. The intrinsic atomic-level surface roughness mobility limit of 4H-SiC Journal of Applied Physics. 124: 105702. DOI: 10.1063/1.5042765  0.331
2017 Ettisserry DP, Goldsman N, Lelis AJ. Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETs Ieee Transactions On Electron Devices. 64: 1007-1014. DOI: 10.1109/Ted.2016.2647233  0.36
2016 Ettisserry DP, Goldsman N, Akturk A, Lelis AJ. Mechanisms of nitrogen incorporation at 4H-SiC/SiO2 interface during nitric oxide passivation – A first principles study Materials Science Forum. 858: 465-468. DOI: 10.4028/Www.Scientific.Net/Msf.858.465  0.626
2016 Akturk A, Goldsman N, Ahyi A, Dhar S, Cusack B, Park M. Spice modeling of advanced silicon carbide high temperature integrated circuits Materials Science Forum. 858: 1070-1073. DOI: 10.4028/Www.Scientific.Net/Msf.858.1070  0.639
2016 Akturk A, Cusack B, Goldsman N. Large area silicon carbide photodiode, and monolithic readout design and fabrication Materials Science Forum. 858: 1023-1027. DOI: 10.4028/Www.Scientific.Net/Msf.858.1023  0.613
2015 Dilli Z, Akturk A, Goldsman N, Potbhare S. An enhanced specialized SiC power MOSFET simulation system International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 463-466. DOI: 10.1109/SISPAD.2015.7292362  0.805
2015 Ettisserry DP, Goldsman N, Akturk A, Lelis AJ. Modeling of oxygen-vacancy hole trap activation in 4H-SiC MOSFETs using density functional theory and rate equation analysis International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 48-51. DOI: 10.1109/SISPAD.2015.7292255  0.62
2015 Ettisserry DP, Goldsman N, Akturk A, Lelis AJ. Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 118. DOI: 10.1063/1.4927619  0.637
2014 Akturk A, Goldsman N, Potbhare S. Electro-thermal simulation of silicon carbide power modules International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 237-240. DOI: 10.1109/SISPAD.2014.6931607  0.781
2014 Ettisserry DP, Goldsman N, Akturk A, Lelis AJ. Effects of carbon-related oxide defects on the reliability of 4H-SiC MOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 61-64. DOI: 10.1109/SISPAD.2014.6931563  0.574
2014 Ettisserry DP, Goldsman N, Akturk A, Lelis AJ. Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces Journal of Applied Physics. 116. DOI: 10.1063/1.4900981  0.622
2014 Ettisserry DP, Goldsman N, Lelis A. A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 115. DOI: 10.1063/1.4868579  0.439
2014 Farneth IP, Satinu MB, Haoyu W, Member S, Khaligh A, Potbhare S, Giroux S, Akturk A, Goldsman N. Design of a phase-shifted zvs full-bridge front-end dc/dc converter for fuel cell inverter applications 2014 Ieee Transportation Electrification Conference and Expo: Components, Systems, and Power Electronics - From Technology to Business and Public Policy, Itec 2014.  0.743
2013 Li B, Shao X, Shahshahan N, Goldsman N, Salter T, Metze GM. An antenna co-design dual Band RF energy harvester Ieee Transactions On Circuits and Systems I: Regular Papers. 60: 3256-3266. DOI: 10.1109/Tcsi.2013.2264712  0.752
2013 Ettisserry DP, Salemi S, Goldsman N, Potbhare S, Akturk A, Lelis A. Identification and quantification of 4H-SiC (0001)/SiO2 interface defects by combining density functional and device simulations International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 396-399. DOI: 10.1109/SISPAD.2013.6650658  0.814
2013 Salemi S, Ettisserry DP, Akturk A, Goldsman N, Lelis A. Density functional and Monte Carlo-based electron transport simulation in 4H-SiC(0001)/SiO2 DMOSFET transition region International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 180-183. DOI: 10.1109/SISPAD.2013.6650604  0.728
2013 Salemi S, Goldsman N, Ettisserry DP, Akturk A, Lelis A. The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface Journal of Applied Physics. 113. DOI: 10.1063/1.4789615  0.729
2013 Yesilkoy F, Potbhare S, Kratzmeier N, Akturk A, Goldsman N, Peckerar M, Dagenais M. A Mid-IR antenna integrated with a geometrically asymmetrical metal-insulator-metal rectifying diode Rectenna Solar Cells. 2147483647: 163-188. DOI: 10.1007/978-1-4614-3716-1_8  0.725
2012 Lelis A, Habersat D, Green R, Goldsman N. Two-way tunneling model of oxide trap charging and discharging in SiC MOSFETs Materials Science Forum. 717: 465-468. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.465  0.335
2012 Salemi S, Akturk A, Potbhare S, Lelis A, Goldsman N. Total near interface trap density calculation of 4H-SiC/SiO 2 structures before and after nitrogen passivation Materials Science Forum. 717: 457-460. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.457  0.795
2012 Salemi S, Akturk A, Potbhare S, Lelis A, Goldsman N. Silicon carbide-silicon dioxide transition layer mobility Materials Science Forum. 717: 449-452. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.449  0.794
2012 Akturk A, Dandin M, Vert A, Soloviev S, Sandvik P, Potbhare S, Goldsman N, Abshire P. Silicon carbide ultraviolet photodetector modeling, design and experiments Materials Science Forum. 717: 1199-1202. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.1199  0.774
2012 Sood AK, Egerton EJ, Puri YR, Goldsman N, Shao X, Akturk A, Dhar NK, Dubey M, Wijewarnasuriya PS, Lineberry B. Design and development of carbon nanotube and graphene based microbolometer for IR imaging applications Proceedings of Spie - the International Society For Optical Engineering. 8512. DOI: 10.1117/12.974241  0.58
2012 Sood AK, Egerton EJ, Puri YR, Fernandes G, Xu J, Akturk A, Goldsman N, Dhar NK, Dubey M, Wijewarnasuriya PS, Lineberry BI. Design and development of carbon nanotube-based microbolometer for IR imaging applications Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.923020  0.593
2012 Akturk A, McGarrity JM, Potbhare S, Goldsman N. Radiation effects in commercial 1200 v 24 A silicon carbide power MOSFETs Ieee Transactions On Nuclear Science. 59: 3258-3264. DOI: 10.1109/Tns.2012.2223763  0.774
2012 Yesilkoy F, Mittal S, Goldsman N, Dagenais M, Peckerar M. A new process for the fabrication of planar antenna coupled Ni-NiOx-Ni tunnel junction devices Microelectronic Engineering. 98: 329-333. DOI: 10.1016/J.Mee.2012.07.078  0.324
2011 Goldsman N, Potbhare S, Akturk A, Salemi S, Lelis A. Modeling and simulation of silicon carbide power systems Ecs Transactions. 41: 177-181. DOI: 10.1149/1.3631495  0.819
2011 Peckerar M, Dornajafi M, Dilli Z, Goldsman N, Ngu Y, Boerger B, Van Wyck N, Gravelin J, Grenon B, Proctor RB, Lowy DA. Fabrication of flexible ultracapacitor/galvanic cell hybrids using advanced nanoparticle coating technology Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29: 0110081-0110086. DOI: 10.1116/1.3524906  0.711
2011 Lauenstein JM, Goldsman N, Liu S, Titus JL, Ladbury RL, Kim HS, Phan AM, Label KA, Zafrani M, Sherman P. Effects of ion atomic number on single-event gate rupture (SEGR) susceptibility of power MOSFETs Ieee Transactions On Nuclear Science. 58: 2628-2636. DOI: 10.1109/Tns.2011.2171995  0.689
2011 Akturk A, Salemi S, Goldsman N, Potbhare S, Lelis A. Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfaces International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 119-122. DOI: 10.1109/SISPAD.2011.6035064  0.814
2011 Li B, Salter T, Zhai Y, Yang B, Shao X, Metze G, Goldsman N. An integrated low power transceiver system Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2011.5972877  0.713
2011 Cho I, Shen CC, Potbhare S, Bhattacharyya SS, Goldsman N. Design methods for wireless sensor network building energy monitoring systems Proceedings - Conference On Local Computer Networks, Lcn. 974-981. DOI: 10.1109/LCN.2011.6115580  0.633
2011 Dilli Z, Curley R, Akturk A, Goldsman N. Statistical vulnerability analysis to study intra-chip coupling of high power microwave signals 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135360  0.762
2011 Shahshahan N, Shao X, Li B, Goldsman N, Salter TS, Metze GM. An analytical model to characterize the input stage of a MOSFET based RF energy harvester for improved impedance matching 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135320  0.711
2011 Shao X, Li B, Shahshahan N, Goldsman N, Salter TS, Metze GM. A planar dual-band antenna design for RF energy harvesting applications 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135318  0.699
2011 Li B, Shao X, Shahshahan N, Goldsman N, Salter TS, Metze GM. Antenna-coupled dual band RF energy harvester design 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135317  0.695
2011 Salemi S, Akturk A, Potbhare S, Lelis A, Goldsman N. The effect of different passivations on near interface trap density of 4H-SiC/SiO 2 structures 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135305  0.801
2011 Dandin M, Akturk A, Vert A, Soloviev S, Sandvik P, Potbhare S, Goldsman N, Abshire P, Cheung KP. Optoelectronic characterization of 4H-SiC avalanche photodiodes operated in DC and in geiger mode 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135207  0.776
2011 Salemi S, Akturk A, Potbhare S, Lelis A, Goldsman N. The effects of different silicon carbide Silicon dioxide interface passivations on transition region mobility and transport 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135143  0.807
2011 Dilli Z, Akturk A, Goldsman N, Holloway MA, Rodgers JC. Nonlinear behavior of electrostatic discharge protection structures under high-power microwave excitation: Modeling and simulation Proceedings - Ieee International Symposium On Circuits and Systems. 1840-1843. DOI: 10.1109/ISCAS.2011.5937944  0.761
2011 Peckerar M, Dilli Z, Dornajafi M, Goldsman N, Ngu Y, Proctor RB, Krupsaw BJ, Lowy DA. A novel high energy density flexible galvanic cell Energy and Environmental Science. 4: 1807-1812. DOI: 10.1039/C1Ee01075A  0.714
2011 Li B, Zhai Y, Yang B, Salter T, Peckerar M, Goldsman N. Ultra low power phase detector and phase-locked loop designs and their application as a receiver Microelectronics Journal. 42: 358-364. DOI: 10.1016/J.Mejo.2010.10.010  0.792
2011 Yang B, Shao X, Goldsman N, Ramahi OM, Guzdar PN. Investigation of the on-chip MISM interconnects with the alternating-direction-implicit finite-difference time-domain method Microwave and Optical Technology Letters. 53: 1582-1585. DOI: 10.1002/Mop.26085  0.35
2010 Lelis AJ, Green R, Habersat D, Goldsman N. Effect of on-state stress on sic dmosfet subthreshold i-v characteristics Materials Science Forum. 645: 983-986. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.983  0.318
2010 Potbhare S, Akturk A, Goldsman N, Lelis A, Dhar S, Agarwal A. Effect of band-edge interface traps and transition region mobility on transport in 4H-SiC MOSFETs Materials Science Forum. 645: 975-978. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.975  0.773
2010 Potbhare S, Goldsman N, Akturk A, Lelis A. Mixed mode modeling and characterization of a 4H-SiC power DMOSFET based DC-DC power converter Materials Science Forum. 645: 1163-1166. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.1163  0.772
2010 Sood AK, Richwine RA, Puri YR, Akturk A, Goldsman N, Potbhare S, Fernandes G, Hsu CH, Kim JH, Xu J, Dhar NK, Wijewarnasuriya PS, Lineberry BI. Design and development of carbon nanostructure-based microbolometers for IR imagers and sensors Proceedings of Spie - the International Society For Optical Engineering. 7679. DOI: 10.1117/12.852730  0.75
2010 Choi K, Ryu G, Yesilkoy F, Chryssis A, Goldsman N, Dagenais M, Peckerar M. Geometry enhanced asymmetric rectifying tunneling diodes Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C6O50-C6O55. DOI: 10.1116/1.3501350  0.314
2010 Lauenstein JM, Ladbury RL, Goldsman N, Kim HS, Batchelor DA, Phan AM. Interpreting space-mission LET requirements for SEGR in power MOSFETs Ieee Transactions On Nuclear Science. 57: 3443-3449. DOI: 10.1109/Tns.2010.2086486  0.691
2010 Akturk A, Holloway M, Potbhare S, Gundlach D, Li B, Goldsman N, Peckerar M, Cheung KP. Compact and distributed modeling of cryogenic bulk MOSFET operation Ieee Transactions On Electron Devices. 57: 1334-1342. DOI: 10.1109/Ted.2010.2046458  0.782
2010 Dandin M, Akturk A, Nouri B, Goldsman N, Abshire P. Characterization of single-photon avalanche diodes in a 0.5 μm standard CMOS process - Part 1: Perimeter breakdown suppression Ieee Sensors Journal. 10: 1682-1690. DOI: 10.1109/Jsen.2010.2046163  0.637
2010 Akturk A, Peckerar M, Eng K, Hamlet J, Potbhare S, Longoria E, Young R, Gurrieri T, Carroll MS, Goldsman N. Compact modeling of 0.35 μm SOI CMOS technology node for 4 K DC operation using Verilog-A Microelectronic Engineering. 87: 2518-2524. DOI: 10.1016/J.Mee.2010.06.005  0.763
2010 Potbhare S, Akturk A, Goldsman N, McGarrity JM, Agarwal A. Modeling and design of high temperature silicon carbide DMOSFET based medium power DC-DC converter International Conference and Exhibition On High Temperature Electronics 2010, Hitec 2010. 144-151.  0.784
2009 Lelis AJ, Habersat D, Green R, Goldsman N. Implications of threshold-voltage instability on SiC DMOSFET operation Materials Science Forum. 615: 809-812. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.809  0.372
2009 Potbhare S, Goldsman N, Akturk A, Lelis A, Green R. Investigation of on and off state characteristics of 4H-SiC DMOSFETs Materials Science Forum. 615: 805-808. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.805  0.775
2009 Habersat DB, Lelis AJ, Potbhare S, Goldsman N. Improvements in SiC MOS processing as revealed by studies of fixed and oxide trap charge Materials Science Forum. 615: 769-772. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.769  0.667
2009 Pothare S, Akturk A, Goldsman N, Lelis A, Dhar S, Ryu SH, Agarwal A. Modeling the effect of conduction band density of states on interface trap occupation and its influence on 4H-SiC MOSFET performance International Conference On Simulation of Semiconductor Processes and Devices, Sispad. DOI: 10.1109/SISPAD.2009.5290228  0.617
2009 Akturk A, Peckerar M, Dornajafi M, Goldsman N, Eng K, Gurrieri T, Carroll MS. Impact ionization and freeze-out model for simulation of low gate bias kink effect in SOI-MOSFETs operating at liquid He temperature International Conference On Simulation of Semiconductor Processes and Devices, Sispad. DOI: 10.1109/SISPAD.2009.5290227  0.6
2009 Salter T, Metze G, Goldsman N. Parasitic aware optimization of an RF power scavenging circuit with applications to smartdust sensor networks Rws 2009 Ieee Radio and Wireless Symposium, Proceedings. 332-335. DOI: 10.1109/RWS.2009.4957347  0.737
2009 Yang B, Shao X, Balzano Q, Goldsman N, Metze G. 916 MHz F-inverted compact antenna (FICA) for highly integrated transceivers Ieee Antennas and Wireless Propagation Letters. 8: 181-184. DOI: 10.1109/Lawp.2008.2004886  0.347
2009 Akturk A, Dandin M, Goldsman N, Abshire P. Modeling of perimeter-gated silicon avalanche diodes fabricated in a standard single-well CMOS process 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378222  0.569
2009 Potbhare S, Goldsman N, Akturk A, Lelis A. Effect of random surface charge distribution on transport in 4H-SiC MOSFETs 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378149  0.735
2009 Akturk A, Potbhare S, Goldsman N, Lelis A. Self-consistent thermal and electrical analysis of silicon carbide power DMOSFET heating and cooling 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378139  0.734
2009 Li B, Yang B, Salter T, Zhai Y, Goldsman N. 20GHz low power CMOS single chip receiver using resonant transformer techniques for enhanced demodulation efficiency 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378023  0.713
2009 Akturk A, Holloway M, Gundlach D, Potbhare S, Li B, Goldsman N, Peckerar M, Cheung KP. Distributed numerical modeling of low temperature MOSFET operation 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378004  0.736
2009 Pennington G, Goldsman N. Simulation of electron transport in (0001) and (11 2- 0) 4H -SiC inversion layers Journal of Applied Physics. 106. DOI: 10.1063/1.3212970  0.61
2009 Gurfinkel M, Potbhare S, Xiong HD, Suehle JS, Shapira Y, Lelis AJ, Habersat D, Goldsman N. Ion implantation and SiC transistor performance Journal of Applied Physics. 105. DOI: 10.1063/1.3110071  0.705
2009 Akturk A, Goldsman N, Potbhare S, Lelis A. High field density-functional-theory based Monte Carlo: 4H -SiC impact ionization and velocity saturation Journal of Applied Physics. 105. DOI: 10.1063/1.3074107  0.769
2009 Salter T, Choi K, Peckerar M, Metze G, Goldsman N. RF energy scavenging system utilising switched capacitor DC-DC converter Electronics Letters. 45: 374-376. DOI: 10.1049/El.2009.0153  0.737
2009 Dilli Z, Akturk A, Goldsman N, Metze G. Controlled on-chip heat transfer for directed heating and temperature reduction Solid-State Electronics. 53: 590-598. DOI: 10.1016/J.Sse.2009.03.023  0.772
2008 Akturk A, Goldsman N. Single-walled zig-zag Carbon nanotube steady-state transport characteristics Journal of Computational and Theoretical Nanoscience. 5: 1138-1144. DOI: 10.1166/Jctn.2008.2548  0.605
2008 Lelis AJ, Habersat D, Green R, Ogunniyi A, Gurfinkel M, Suehle J, Goldsman N. Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements Ieee Transactions On Electron Devices. 55: 1835-1840. DOI: 10.1109/Ted.2008.926672  0.373
2008 Potbhare S, Goldsman N, Akturk A, Gurfinkel M, Lelis A, Suehle JS. Energy- and time-dependent dynamics of trap occupation in 4H-SiC MOSFETs Ieee Transactions On Electron Devices. 55: 2061-2070. DOI: 10.1109/Ted.2008.926668  0.777
2008 Potbhare S, Goldsman N, Lelis A, McGarrity JM, McLean FB, Habersat D. A physical model of high temperature 4H-SiC MOSFETs Ieee Transactions On Electron Devices. 55: 2029-2040. DOI: 10.1109/Ted.2008.926665  0.725
2008 Gurfinkel M, Xiong HD, Cheung KP, Suehle JS, Bernstein JB, Shapira Y, Lelis AJ, Habersat D, Goldsman N. Characterization of transient gate oxide trapping in SiC MOSFETs using fast I-V techniques Ieee Transactions On Electron Devices. 55: 2004-2012. DOI: 10.1109/Ted.2008.926626  0.362
2008 Akturk A, Goldsman N, Aslam S, Sigwarth J, Herrero F. Numerical modeling and design of single photon counter 4H-SiC avalanche photodiodes International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 201-204. DOI: 10.1109/SISPAD.2008.4648272  0.553
2008 Potbhare S, Akturk A, Goldsman N, Lelis A. Effects of quantum confinement on interface trap occupation in 4H-SiC MOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 181-184. DOI: 10.1109/SISPAD.2008.4648267  0.749
2008 Akturk A, Goldsman N. Unusually strong temperature dependence of graphene electron mobility International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 173-176. DOI: 10.1109/SISPAD.2008.4648265  0.559
2008 Akturk A, Goldsman N, Pandana H, Gomez R, Khan J. Numerical modeling of a deoxyribonucleic acid microassay: Carbon nanotube thin film transistor sensor International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 93-96. DOI: 10.1109/SISPAD.2008.4648245  0.528
2008 Salter T, Metze G, Goldsman N. Low power non-coherent OOK receiver utilizing weak inversion and RF energy scavenging for demodulation 2008 International Conference of Recent Advances in Microwave Theory and Applications, Microwave 2008. 578-580. DOI: 10.1109/AMTA.2008.4762987  0.732
2008 Salter T, Metze G, Goldsman N. Application of a parasitic aware model to optimize an RF energy scavenging circuit fabricated in 130 nm CMOS 2008 International Conference of Recent Advances in Microwave Theory and Applications, Microwave 2008. 303-305. DOI: 10.1109/AMTA.2008.4762986  0.73
2008 Akturk A, Goldsman N, Aslam S, Sigwarth J, Herrero F. Comparison of 4H-SiC impact ionization models using experiments and self-consistent simulations Journal of Applied Physics. 104. DOI: 10.1063/1.2958320  0.632
2008 Akturk A, Goldsman N. Electron transport and full-band electron-phonon interactions in graphene Journal of Applied Physics. 103. DOI: 10.1063/1.2890147  0.591
2008 Dilli Z, Goldsman N, Peckerar M, Akturk A, Metze G. Design and testing of a self-powered 3D integrated SOI CMOS system Microelectronic Engineering. 85: 388-394. DOI: 10.1016/J.Mee.2007.07.013  0.779
2007 Akturk A, Goldsman N, Pennington G, Wickenden A. Terahertz current oscillations in single-walled zigzag carbon nanotubes. Physical Review Letters. 98: 166803. PMID 17501447 DOI: 10.1103/Physrevlett.98.166803  0.725
2007 Potbhare S, Goldsman N, Pennington G, Lelis A, McGarrity JM. Time dependent trapping and generation-recombination of interface charges: Modeling and characterization for 4H-SiC MOSFETs Materials Science Forum. 556: 847-850. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.847  0.776
2007 Pennington G, Potbhare S, Goldsman N, Habersat D, Lelis A, McGarrity J, Ashman C. Investigation of drain current saturation in 4H-SiC MOSFETs Materials Science Forum. 556: 811-814. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.811  0.77
2007 Akturk A, Pennington G, Goldsman N, Wickenden A. Electron transport and velocity oscillations in a carbon nanotube Ieee Transactions On Nanotechnology. 6: 469-473. DOI: 10.1109/Tnano.2007.896968  0.714
2007 Akturk A, Allnutt J, Dilli Z, Goldsman N, Peckerar M. Device modeling at cryogenic temperatures: Effects of incomplete ionization Ieee Transactions On Electron Devices. 54: 2984-2990. DOI: 10.1109/Ted.2007.906966  0.799
2007 Dilli Z, Goldsman N, Akturk A, Metze G. A 3-D time-dependent green's function approach to modeling electromagnetic noise in on-chip interconnect networks International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 337-340. DOI: 10.1109/SISPAD.2006.282904  0.749
2007 Akturk A, Goldsman N, Dilli Z, Peckerar M. Device performance and package induced self heating effects at cryogenic temperatures International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 240-243. DOI: 10.1109/SISPAD.2006.282880  0.778
2007 Pennington G, Potbhare S, McGarrity JM, Goldsman N, Lelis A, Ashman C. Electron transport at technologically significant stepped 4H-SiC/SiO 2 interfaces International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 236-239. DOI: 10.1109/SISPAD.2006.282879  0.77
2007 Akturk A, Pennington GW, Goldsman N, Wickenden AE. Quantum electron transport in carbon nanotubes: Velocity oscillations and length dependence International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 31-34. DOI: 10.1109/SISPAD.2006.282831  0.691
2007 Potbhare S, Goldsman N, Lelis A. High temperature high field numerical modeling and experimental characterization of 4H-SiC MOSFETs 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422486  0.671
2007 Zhai Y, Yang B, Salter T, Goldsman N, Abshire PA. Using device characteristics to obtain a low-power temperature-insensitive oscillator for smart dust networks 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422350  0.733
2007 Salter TS, Yang B, Goldsman N. Low power receiver design utilizing weak inversion and RF energy harvesting for demodulation 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422349  0.717
2007 Yang B, Salter TS, Goldsman N. A physically designed 2.2 GHz OOK receiver for minimum power wireless sensor network applications 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422347  0.704
2007 Salter TS, Metze G, Goldsman N. Improved RF power harvesting circuit design 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422346  0.719
2007 Dilli Z, Goldsman N. Relating electrical and computer engineering to the high school classroom 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422340  0.648
2007 Ngu YT, Dilli Z, Peckerar M, Goldsman N. High capacitance battery for powering distributed networks node devices 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422288  0.697
2007 Rusak T, Akturk A, Goldsman N. Numerical modeling of nanotube embedded chemicapacitive sensors 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422247  0.513
2007 Dilli Z, Akturk A, Goldsman N. Controlled localized heating on integrated circuits for cold-ambient temperature applications 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422238  0.749
2007 Akturk A, Goldsman N, Dilli Z, Peckerar M. Effects of cryogenic temperatures on small-signal MOSFET capacitances 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422237  0.748
2007 Gurfinkel M, Kim J, Potbhare S, Xiong HD, Cheung KP, Suehle J, Bernstein JB, Shapira Y, Lelis AJ, Habersat D, Goldsman N. Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels Ieee International Integrated Reliability Workshop Final Report. 111-113. DOI: 10.1109/IRWS.2007.4469233  0.639
2007 Akturk A, Goldsman N, Pennington G. Self-consistent ensemble Monte Carlo simulations show terahertz oscillations in single-walled carbon nanotubes Journal of Applied Physics. 102. DOI: 10.1063/1.2794690  0.729
2007 Pennington G, Goldsman N, Akturk A, Wickenden AE. Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors Applied Physics Letters. 90. DOI: 10.1063/1.2437127  0.732
2007 Potbhare S, Goldsman N, Pennington G, Akturk A, Lelis A. Transient Characterization of interface traps in 4H-SiC MOSFETs 2007 International Conference On Simulation of Semiconductor Processes and Devices, Sispad 2007. 177-180.  0.811
2007 Akturk A, Goldsman N, Pennington G. Modeling carbon nanotube electron-phonon resonances shows terahertz current oscillations 2007 International Conference On Simulation of Semiconductor Processes and Devices, Sispad 2007. 225-228.  0.707
2006 Potbhare S, Pennington G, Goldsman N, Lelis A, Habersat D, McLean FB, McGarrity JM. Using a first principles coulomb scattering mobility model for 4H-SiC MOSFET device simulation Materials Science Forum. 527: 1321-1324. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1321  0.783
2006 Lelis AJ, Habersat D, Lopez G, McGarrity JM, McLean FB, Goldsman N. Bias stress-induced threshold-voltage instability of SiC MOSFETs Materials Science Forum. 527: 1317-1320. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1317  0.352
2006 Pennington G, Potbhare S, Goldsman N, Habersat D, Lelis A. Determination of the temperature and field dependence of the interface conductivity mobility in 4H-SiC/SiO2 Materials Science Forum. 527: 1055-1058. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1055  0.769
2006 Lelis A, Habersat D, Olaniran F, Simons B, McGarrity J, McLean FB, Goldsman N. Time-dependent bias stress-induced instability of SiC MOS devices Materials Research Society Symposium Proceedings. 911: 335-340. DOI: 10.1557/Proc-0911-B13-05  0.331
2006 Goldsman N, Akturk A. Analysis and design of key phenomena in electronics: Nanostructures and devices Proceedings of Spie - the International Society For Optical Engineering. 6370. DOI: 10.1117/12.692871  0.597
2006 Lelis AJ, Potbhare S, Habersat D, Pennington G, Goldsman N. Modeling and characterization of bias stress-induced instability of SiC MOSFETs Ieee International Integrated Reliability Workshop Final Report. 160-162. DOI: 10.1109/IRWS.2006.305235  0.75
2006 Potbhare S, Goldsman N, Pennington G, Lelis A, McGarrity JM. Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor Journal of Applied Physics. 100. DOI: 10.1063/1.2335967  0.797
2006 Potbhare S, Goldsman N, Pennington G, Lelis A, McGarrity JM. A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges Journal of Applied Physics. 100. DOI: 10.1063/1.2335673  0.783
2005 Akturk A, Goldsman N, Metze G. Self-consistent modeling of heating and MOSFET performance in 3-D integrated circuits Ieee Transactions On Electron Devices. 52: 2395-2403. DOI: 10.1109/Ted.2005.857187  0.604
2005 Akturk A, Pennington G, Goldsman N. Quantum modeling and proposed designs of CNT-embedded nanoscale MOSFETs Ieee Transactions On Electron Devices. 52: 577-584. DOI: 10.1109/Ted.2005.845148  0.745
2005 Pennington G, Goldsman N. Low-field semiclassical carrier transport in semiconducting carbon nanotubes Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.205318  0.604
2005 Powell SK, Goldsman N, Lelis A, McGarrity JM, McLean FB. High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 97. DOI: 10.1063/1.1849424  0.605
2005 Akturk A, Goldsman N, Parker L, Metze G. Mixed-mode temperature modeling of full-chip based on individual non-isothermal device operations Solid-State Electronics. 49: 1127-1134. DOI: 10.1016/J.Sse.2005.04.019  0.628
2005 Han Z, Goldsman N, Chug-Kai L. Incorporation of quantum corrections to semiclassical two-dimensional device modeling with the Wigner-Boltzmann equation Solid-State Electronics. 49: 145-154. DOI: 10.1016/J.Sse.2004.08.017  0.503
2005 Akturk A, Goldsman N, Metze G. Coupled simulation of device performance and heating of vertically stacked three-dimensional integrated circuits International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2005: 115-118.  0.579
2005 Jianzhou W, Potbhare S, Goldsman N, Lelis A. Numerical modeling and characterization of n-channel 4H-SiC double-diffused vertical power MOSFET 2005 International Semiconductor Device Research Symposium. 2005: 366-367.  0.658
2005 Dilli Z, Goldsman N, Peckerar M, Metze G. Realization of self-powered electronics by 3-D integration 2005 International Semiconductor Device Research Symposium. 2005: 324-325.  0.684
2005 Pennington G, Akturk A, McGarrity JM, Goldsman N. Transport properties of wide band gap nanotubes 2005 International Semiconductor Device Research Symposium. 2005: 346-347.  0.672
2005 Akturk A, Goldsman N, Dhar N, Wijewarnasuriya PS. Modeling the temperature dependence and optical response of HgCdTe diodes 2005 International Semiconductor Device Research Symposium. 2005: 70-71.  0.518
2005 Pennington G, Akturk A, Goldsman N. Low-field transport model for semiconducting carbon nanotubes International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2005: 87-90.  0.708
2005 Akturk A, Pennington G, Goldsman N. Device behavior modeling for carbon nanotube silicon-on-insulator MOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2005: 51-54.  0.722
2005 Potbhare S, Pennington G, Goldsman N, McGarrity JM, Lelis A. Characterization of 4H-SiC MOSFET interface trap charge density using a first principles coulomb scattering mobility model and device simulation International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2005: 95-98.  0.783
2005 Akturk A, Goldsman N, Metze G. An efficient inclusion of self-heating and quantum effects in SOI device simulations 2005 International Semiconductor Device Research Symposium. 2005: 99-100.  0.544
2005 Dilli Z, Goldsman N, Akturk A. An impulse-response based methodology for modeling complex interconnect networks 2005 International Semiconductor Device Research Symposium. 2005: 64-65.  0.736
2005 Pennington G, Potbhare S, Goldsman N, McGarrity JM, Lelis A. Impact of surface steps on the roughness mobility in 4H-SiC 2005 International Semiconductor Device Research Symposium. 2005: 143-144.  0.729
2004 Pennington G, Goldsman N. Self-consistent calculations for n-type hexagonal SiC inversion layers Journal of Applied Physics. 95: 4223-4234. DOI: 10.1063/1.1687977  0.624
2004 Pennington G, Akturk A, Goldsman N. Phonon-limited transport in carbon nanotubes using the monte carlo method 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 51-52.  0.703
2004 Dilli Z, Goldsman N. Development and implementation of a multi-specialty advanced capstone design course Proceedings of the Fifth International Conference On Information Technology Based Higher Education and Training, Ithet 2004. 425-428.  0.664
2003 Goldsman N, Huang CK. Self-consistent modeling of MOSFET quantum effects by solving the Schrödinger and Boltzmann system of equations International Journal of High Speed Electronics and Systems. 13: 803-822. DOI: 10.1142/S0129156403002034  0.52
2003 Akturk A, Goldsman N, Metze G. Coupled modeling of time-dependent full-chip heating and quantum non-isothermal device operation International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2003: 311-314. DOI: 10.1109/SISPAD.2003.1233699  0.581
2003 Pennington G, Goldsman N. Theory and design of field-effect carbon nanotube transistors International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2003: 167-170. DOI: 10.1109/SISPAD.2003.1233663  0.592
2003 Akturk A, Pennington G, Goldsman N. Modeling the enhancement of nanoscale MOSFETs by embedding carbon nanotubes in the channel Proceedings of the Ieee Conference On Nanotechnology. 1: 24-27. DOI: 10.1109/NANO.2003.1231705  0.709
2003 Akturk A, Parker L, Goldsman N, Metzet G. Mixed-mode simulation of non-isothermal quantum device operation and full-chip heating 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 508-509. DOI: 10.1109/ISDRS.2003.1272234  0.572
2003 Pennington G, Akturk A, Goldsman N. Electron mobility of a semiconducting carbon nanotube 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 412-413. DOI: 10.1109/ISDRS.2003.1272158  0.699
2003 Pennington G, Goldsman N, McGarrity JM, Leliis A, Scozzie CJ. Mobility of (1120) and (0001) orientated 4H-Sic quantized inversion layers 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 338-339. DOI: 10.1109/ISDRS.2003.1272122  0.624
2003 Zhang X, Goldsman N, Emstein JBB, McGamty JM, Powell SK. Numerical and experimental characterization of 4H-Sic schottky diodes 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 120-121. DOI: 10.1109/ISDRS.2003.1272023  0.528
2003 Pennington G, Goldsman N. Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes Physical Review B - Condensed Matter and Materials Physics. 68: 454261-4542611. DOI: 10.1103/Physrevb.68.045426  0.618
2003 Huang CK, Goldsman N. Non-equilibrium modeling of tunneling gate currents in nanoscale MOSFETs Solid-State Electronics. 47: 713-720. DOI: 10.1016/S0038-1101(02)00331-3  0.575
2003 Akturk A, Goldsman N, Metze G. Increased CMOS inverter switching speed with asymmetrical doping Solid-State Electronics. 47: 185-192. DOI: 10.1016/S0038-1101(02)00193-4  0.628
2002 Pennington G, Goldsman N. Monte Carlo simulation of electron transport in a carbon nanotube International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2002: 279-282. DOI: 10.1109/SISPAD.2002.1034572  0.576
2002 Powell SK, Goldsman N, McGarrity JM, Bernstein J, Scozzie CJ, Lelis A. Physics-based numerical modeling and characterization of 6H-silicon-carbide metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 92: 4053-4061. DOI: 10.1063/1.1499523  0.625
2002 Dilli Z, Goldsman N, Schmidt JA, Harper L, Marcus SI. A new pedagogy in electrical and computer engineering: An experiential and conceptual approach Proceedings - Frontiers in Education Conference. 1: T2C/3-T2C/7.  0.654
2001 Powell SK, Goldsman N, Scozzie CJ, Lelis A, McGarrity JM. Self-consistent surface mobility and interface charge modeling in conjunction with experiment of 6H-SiC MOSFETs 2001 International Semiconductor Device Research Symposium, Isdrs 2001 - Proceedings. 572-574A. DOI: 10.1109/ISDRS.2001.984582  0.588
2001 Pennington G, Goldsman N, Scozzie S, McGarrity JM, McLean B. Investigation of temperature effects on electron transport in SiC using unique full band Monte Carlo simulation 2001 International Semiconductor Device Research Symposium, Isdrs 2001 - Proceedings. 531-534. DOI: 10.1109/ISDRS.2001.984566  0.59
2001 Pennington G, Goldsman N. Modeling the effective mass and Y-junction rectifying current of carbon nanotubes 2001 International Semiconductor Device Research Symposium, Isdrs 2001 - Proceedings. 310-313. DOI: 10.1109/ISDRS.2001.984502  0.547
2001 Akturk A, Goldsman N, Metze G. Faster CMOS inverter switching obtained with channel engineered asymmetrical halo implanted MOSFETs 2001 International Semiconductor Device Research Symposium, Isdrs 2001 - Proceedings. 118-121. DOI: 10.1109/ISDRS.2001.984453  0.582
2001 Pennington G, Goldsman N. Empirical pseudopotential band structure of 3C, 4H, and 6H SiC using transferable semiempirical Si and C model potentials Physical Review B - Condensed Matter and Materials Physics. 64: 451041-4510410. DOI: 10.1103/Physrevb.64.045104  0.606
2000 Huang M, Mayergoyz ID, Goldsman N. Numerical simulation of small-signal microwave performance of 4H-SiC MESFET Solid-State Electronics. 44: 1281-1287. DOI: 10.1016/S0038-1101(00)00025-3  0.356
2000 Goldsman N, Lin CK, Han Z, Huang CK. Advances in the Spherical Harmonic-Boltzmann-Wigner approach to device simulation Superlattices and Microstructures. 27: 159-175. DOI: 10.1006/Spmi.1999.0810  0.659
1999 Lin CK, Goldsman N, Mayergoyz ID, Chang CH. A transient solution of the Boltzmann equation exposes energy overshoot in semiconductor devices Journal of Applied Physics. 86: 468-475. DOI: 10.1063/1.370754  0.349
1999 Han Z, Goldsman N, Stettler MA. The realization of scattering matrix approach to transport modeling through spherical harmonics Solid-State Electronics. 43: 493-501. DOI: 10.1016/S0038-1101(98)00282-2  0.502
1998 Kerr DC, Goldsman N, Mayergoyz ID. Three-Dimensional Hydrodynamic Modeling of MOSFET Devices Vlsi Design. 6: 261-265. DOI: 10.1155/1998/60859  0.349
1998 Chang C, Lin C-, Goldsman N, Mayergoyz ID. Spherical Harmonic Modeling of a 0.05 μmBase BJT: A Comparison with Monte Carloand Asymptotic Analysis Vlsi Design. 8: 147-151. DOI: 10.1155/1998/59191  0.31
1998 Liang W, Kerr DC, Goldsman N, Mayergoyz ID. Hydrodynamic Device Simulation with New State Variables Specially Chosen for a Block Gummel Iterative Approach Vlsi Design. 6: 191-195. DOI: 10.1155/1998/32480  0.324
1998 Wang W, McCarthy D, Park D, Ma D, Marrian C, Peckerar M, Goldsman N, Melngailis J, Berry IL. Fabrication and characterization of buried subchannel implant n-metal-oxide-semiconductor transistors Journal of Vacuum Science & Technology B. 16: 3812-3816. DOI: 10.1116/1.590414  0.322
1998 Shen CC, Murguia J, Goldsman N, Peckerar M, Melngailis J, Antoniadis DA. Use of focusEDion-beam and modeling to optimize submicron MOSFET characteristics Ieee Transactions On Electron Devices. 45: 453-459. DOI: 10.1109/16.658680  0.376
1998 Huang M, Goldsman N, Chang C, Mayergoyz I, McGarrity JM, Woolard D. Determining 4H silicon carbide electronic properties through combined use of device simulation and metal–semiconductor field-effect-transistor terminal characteristics Journal of Applied Physics. 84: 2065-2070. DOI: 10.1063/1.368267  0.416
1998 Krishnan MS, Goldsman N, Christou A. Transport simulation of bulk AlxGa1−xN and the two-dimensional electron gas at the AlxGa1−xN/GaN interface Journal of Applied Physics. 83: 5896-5903. DOI: 10.1063/1.367452  0.329
1997 Liang W, Goldsman N, Mayergoyz I, Oldiges PJ. 2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations Ieee Transactions On Electron Devices. 44: 257-267. DOI: 10.1109/16.557713  0.323
1996 Singh SP, Goldsman N, Mayergoyz ID. Modeling multi-band effects of hot electron transport in silicon by self-consistent solution of the Boltzmann transport and Poisson equations Solid-State Electronics. 39: 1695-1700. DOI: 10.1016/S0038-1101(96)00114-1  0.316
1995 Wu Y, Goldsman N. Deterministic modeling of impact ionization with a random‐k approximation and the multiband Boltzmann equation Journal of Applied Physics. 78: 5174-5176. DOI: 10.1063/1.360699  0.321
1995 Hennacy KA, Wu Y-, Goldsman N, Mayergoyz ID. Deterministic MOSFET simulation using a generalized spherical harmonic expansion of the Boltzmann equation Solid-State Electronics. 38: 1485-1495. DOI: 10.1016/0038-1101(94)00280-S  0.339
1993 Wu YJ, Goldsman N. An Efficient Solution Of The Multi‐Band Boltzmann Transport Equation In Silicon Compel-the International Journal For Computation and Mathematics in Electrical and Electronic Engineering. 12: 475-485. DOI: 10.1108/Eb051820  0.301
1993 Wang S, Goldsman N, Lin Q, Frey J. RELY: A physics-based CAD tool for predicting time-dependent hot-electron induced degradation in MOSFET's Solid-State Electronics. 36: 833-841. DOI: 10.1016/0038-1101(93)90005-B  0.387
1992 Wang S-, Goldsman N, Hennacy K. Determination of space-dependent electron distribution function by combined use of energy and Boltzmann transport equations: improvement, evaluation, and explanation Ieee Transactions On Electron Devices. 39: 1821-1828. DOI: 10.1109/16.144670  0.31
1992 Lin H, Goldsman N, Mayergoyz ID. An efficient deterministic solution of the space-dependent Boltzmann transport equation for silicon Solid-State Electronics. 35: 33-42. DOI: 10.1016/0038-1101(92)90300-2  0.315
1992 Lin H, Goldsman N, Mayergoyz ID. Device modeling by deterministic self-consistent solution of Poisson and Boltzmann transport equations Solid-State Electronics. 35: 769-778. DOI: 10.1016/0038-1101(92)90277-J  0.347
1991 Takeda M, Frey J, Peng Z, Goldsman N. Simulation of substrate current characteristics of submicron MOSFETs Electronics Letters. 27: 144-146. DOI: 10.1049/El:19910094  0.362
1991 Goldsman N, Henrickson L, Frey J. A physics-based analytical/numerical solution to the Boltzmann transport equation for use in device simulation Solid State Electronics. 34: 389-396. DOI: 10.1016/0038-1101(91)90169-Y  0.367
1991 Lin H, Goldsman N. An efficient solution of the Boltzmann transport equation which includes the Pauli exclusion principle Solid-State Electronics. 34: 1035-1048. DOI: 10.1016/0038-1101(91)90098-J  0.335
1990 Goldsman N, Henrickson L, Frey J. Reconciliation of a Hot-Electron Distribution Function with the Lucky Electron-Exponential Model in Silicon Ieee Electron Device Letters. 11: 472-474. DOI: 10.1109/55.63000  0.323
1990 Ural T, Peng ZZ, Frey J, Goldsman N. Simulation Of Eprom Programming Characteristics Electronics Letters. 26: 716-717. DOI: 10.1049/El:19900467  0.343
1990 Henrickson L, Peng Z, Frey J, Goldsman N. Enhanced reliability in Si MOSFETs with channel lengths under 0.2 micron Solid State Electronics. 33: 1275-1278. DOI: 10.1016/0038-1101(90)90030-I  0.332
1985 Frey J, Goldsman N. Tradeoffs and electron temperature calculations in lightly doped drain structures Ieee Electron Device Letters. 6: 28-30. DOI: 10.1109/Edl.1985.26031  0.361
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