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Bradley P. Tinkham, Ph.D. - Publications

Affiliations: 
2002 Northwestern University, Evanston, IL 
Area:
Atomic-scale X-ray studies of gas/solid, liquid/solid and solid/solid interfaces, ultrathin films, membranes, and nanoparticles.
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20 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 David C, Girardeau T, Paumier F, Eyidi D, Lacroix B, Papathanasiou N, Tinkham BP, Guérin P, Marteau M. Microstructural and conductivity changes induced by annealing of ZnO:B thin films deposited by chemical vapour deposition. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 23: 334209. PMID 21813967 DOI: 10.1088/0953-8984/23/33/334209  0.37
2009 Watahiki T, Jenichen B, Shayduk R, Tinkham BP, Braun W, Riechert H. Structure analysis of epitaxial Gd2O3/Si(0 0 1) for high-k gate dielectric applications Journal of Crystal Growth. 311: 2179-2182. DOI: 10.1016/j.jcrysgro.2008.10.012  0.503
2008 Tinkham BP, Braun W, Ploog KH, Takahasi M, Mizuki J, Grosse F. As-rich InAs (001) - (2×4) phases investigated by in situ surface x-ray diffraction Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1516-1520. DOI: 10.1116/1.2918314  0.399
2008 Tinkham BP, Jenichen B, Kaganer VM, Shayduk R, Braun W, Ploog KH. Post-deposition growth kinetics of Ge on Ge(0 0 1) Journal of Crystal Growth. 310: 3416-3421. DOI: 10.1016/j.jcrysgro.2008.04.035  0.419
2008 Watahiki T, Tinkham BP, Jenichen B, Shayduk R, Braun W, Ploog KH. Praseodymium silicide formation at the Pr2O3/Si interface Applied Surface Science. 255: 758-760. DOI: 10.1016/j.apsusc.2008.07.063  0.446
2008 Tinkham BP, Romanyuk O, Braun W, Ploog KH, Grosse F, Takahasi M, Kaizu T, Mizuki J. GaSb(001) Surface Reconstructions Measured at the Growth Front by Surface X-ray Diffraction Journal of Electronic Materials. 37: 1793-1798. DOI: 10.1007/s11664-008-0557-6  0.421
2008 Jenichen B, Kaganer VM, Braun W, Shayduk R, Tinkham B, Herfort J. In situ X-ray diffraction study of epitaxial growth of ordered Fe 3Si films Journal of Materials Science: Materials in Electronics. 19: S199-S202. DOI: 10.1007/s10854-007-9530-z  0.602
2007 Tinkham BP, Braun W, Kaganer VM, Satapathy DK, Jenichen B, Ploog KH. Nucleation, coarsening and kinetic scaling of two-dimensional islands on GaSb(0 0 1) Surface Science. 601: 814-821. DOI: 10.1016/j.susc.2006.11.030  0.337
2007 Watahiki T, Tinkham BP, Jenichen B, Braun W, Ploog KH. Growth of praseodymium oxide and silicate for high-k dielectrics by molecular beam epitaxy Journal of Crystal Growth. 301: 381-385. DOI: 10.1016/j.jcrysgro.2006.11.094  0.604
2006 Tinkham BP, Takahasi M, Jenichen B, Watahiki T, Braun W, Ploog KH. Structure and stability of Pr2O3/Si(0 0 1) heterostructures grown by molecular beam epitaxy using a high temperature effusion source Semiconductor Science and Technology. 21: 1552-1556. DOI: 10.1088/0268-1242/21/12/009  0.605
2006 Guo X, Braun W, Jenichen B, Kaganer VM, Tinkham BP, Trampert A, Ploog KH. Synchrotron x-ray scattering study of thin epitaxial Pr2O 3 films on Si(001) Journal of Applied Physics. 100. DOI: 10.1063/1.2216421  0.505
2005 Braun W, Kaganer VM, Jenichen B, Tinkham B, Ploog KH. Surface dynamics of III-V semiconductors studied by in situ X-ray diffraction during molecular beam epitaxy Zeitschrift Fur Kristallographie. 220: 225-230. DOI: 10.1524/zkri.220.2.225.59138  0.387
2005 Tinkham BP, Guo XX, Braun W, Trampert A, Ploog KH. Molecular beam epitaxy of Pr2O3 on Si(001) for CMOS applications Device Research Conference - Conference Digest, Drc. 2005: 87-88. DOI: 10.1109/DRC.2005.1553068  0.568
2005 Braun W, Kaganer VM, Jenichen B, Satapathy DK, Guo X, Tinkham BP, Ploog KH. Surface kinetics of GaAs(0 0 1), InAs(0 0 1) and GaSb(0 0 1) during MBE growth studied by in situ surface X-ray diffraction Journal of Crystal Growth. 278: 449-457. DOI: 10.1016/j.jcrysgro.2004.12.045  0.362
2003 Tinkham BP, Goodner DM, Walko DA, Bédzyk MJ. X-ray studies of SiGe/Si(001) epitaxial growth with Te as a surfactant Physical Review B - Condensed Matter and Materials Physics. 67: 354041-354046. DOI: 10.1103/Physrevb.67.035404  0.775
2003 Tinkham BP, Goodner DM, Walko DA, Bedzyk MJ. X-ray studies of Si/Ge/Si(001) epitaxial growth with Te as a surfactant Physical Review B. 67. DOI: 10.1103/PhysRevB.67.035404  0.771
2003 Rodrigues W, Tinkham BP, Sakata O, Lee TL, Kazimirov A, Bedzyk MJ. X-ray standing wave study of Si/Ge/Si( 0 0 1 ) heterostructures grown with Bi as a surfactant Surface Science. 529: 1-10. DOI: 10.1016/S0039-6028(03)00303-0  0.788
2003 Goodner DM, Marasco DL, Escuadro AA, Cao L, Tinkham BP, Bedzyk MJ. X-ray standing wave study of the Sr/Si(0 0 1)-(2 × 3) surface Surface Science. 547: 19-26. DOI: 10.1016/J.Susc.2003.09.031  0.46
2002 Tinkham BP, Goodner DM, Walko DA, Bedzyk MJ. X-ray analysis of Si/Ge/Si(001) heterolayer structures grown by surfactant mediated epitaxy Materials Research Society Symposium - Proceedings. 696: 143-148. DOI: 10.1557/Proc-696-N4.9  0.75
2000 Sakata O, Lyman PF, Tinkham BP, Walko DA, Marasco DL, Lee TL, Bedzyk MJ. X-ray scattering study of the Ge(001):Te(1X1) surface structure Physical Review B - Condensed Matter and Materials Physics. 61: 16692-16696.  0.662
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