| Year |
Citation |
Score |
| 2023 |
Ewing JJ, Lynsky C, Wong MS, Wu F, Chow YC, Shapturenka P, Iza M, Nakamura S, Denbaars SP, Speck JS. High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates. Optics Express. 31: 41351-41360. PMID 38087536 DOI: 10.1364/OE.503732 |
0.343 |
|
| 2023 |
Yao Y, Li H, Wang M, Li P, Lam M, Iza M, Speck JS, DenBaars SP, Nakamura S. High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization. Optics Express. 31: 28649-28657. PMID 37710681 DOI: 10.1364/OE.491622 |
0.351 |
|
| 2023 |
Li P, Li H, Yao Y, Qwah KS, Iza M, Speck JS, Nakamura S, DenBaars SP. Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes. Optics Express. 31: 7572-7578. PMID 36859886 DOI: 10.1364/OE.480393 |
0.379 |
|
| 2022 |
Anderson R, Zhang H, Trageser E, Palmquist N, Wong M, Nakamura S, DenBaars S. Green edge emitting lasers with porous GaN cladding. Optics Express. 30: 27674-27682. PMID 36236933 DOI: 10.1364/OE.460739 |
0.343 |
|
| 2022 |
Anderson R, Cohen D, Zhang H, Trageser E, Palmquist N, Nakamura S, DenBaars S. Nano-porous GaN cladding and scattering loss in edge emitting laser diodes. Optics Express. 30: 2759-2767. PMID 35209409 DOI: 10.1364/OE.445512 |
0.32 |
|
| 2021 |
Reilly CE, Keller S, Nakamura S, DenBaars SP. Metalorganic chemical vapor deposition of InN quantum dots and nanostructures. Light, Science & Applications. 10: 150. PMID 34285184 DOI: 10.1038/s41377-021-00593-8 |
0.385 |
|
| 2021 |
Reilly CE, Keller S, Nakamura S, DenBaars SP. Metalorganic chemical vapor deposition of InN quantum dots and nanostructures. Light, Science & Applications. 10: 150. PMID 34285184 DOI: 10.1038/s41377-021-00593-8 |
0.385 |
|
| 2021 |
Li P, Li H, Yao Y, Zhang H, Lynsky C, Qwah KS, Iza M, Speck JS, Nakamura S, DenBaars SP. Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control. Optics Express. 29: 22001-22007. PMID 34265974 DOI: 10.1364/OE.430694 |
0.371 |
|
| 2020 |
Chan L, Karmstrand T, Chan A, Shapturenka P, Hwang D, Margalith T, DenBaars SP, Gordon MJ. Fabrication and chemical lift-off of sub-micron scale III-nitride LED structures. Optics Express. 28: 35038-35046. PMID 33182958 DOI: 10.1364/OE.403299 |
0.367 |
|
| 2020 |
Back J, Wong MS, Kearns J, DenBaars SP, Weisbuch C, Nakamura S. Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length. Optics Express. 28: 29991-30003. PMID 33114886 DOI: 10.1364/Oe.401640 |
0.388 |
|
| 2020 |
Khoury M, Li H, Bonef B, Mates T, Wu F, Li P, Wong MS, Zhang H, Song J, Choi J, Speck JS, Nakamura S, DenBaars SP. 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates. Optics Express. 28: 18150-18159. PMID 32680016 DOI: 10.1364/Oe.387561 |
0.355 |
|
| 2020 |
Li P, Zhang H, Li H, Iza M, Yao Y, Wong MS, Palmquist N, Speck JS, Nakamura S, DenBaars SP. Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition. Optics Express. 28: 18707-18712. PMID 32672165 DOI: 10.1364/Oe.394664 |
0.331 |
|
| 2020 |
Li H, Li P, Zhang H, Chow YC, Wong MS, Pinna S, Klamkin J, Speck JS, Nakamura S, DenBaars SP. Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate. Optics Express. 28: 13569-13575. PMID 32403828 DOI: 10.1364/Oe.384139 |
0.688 |
|
| 2020 |
Wong MS, Kearns JA, Lee C, Smith JM, Lynsky C, Lheureux G, Choi H, Kim J, Kim C, Nakamura S, Speck JS, DenBaars SP. Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments. Optics Express. 28: 5787-5793. PMID 32121793 DOI: 10.1364/Oe.384127 |
0.36 |
|
| 2019 |
Khoury M, Li H, Zhang H, Bonef B, Wong M, Wu F, Cohen D, De Mierry P, Vennéguès P, Speck JS, Nakamura S, DenBaars SP. Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates. Acs Applied Materials & Interfaces. PMID 31769651 DOI: 10.1021/Acsami.9B17525 |
0.326 |
|
| 2019 |
Lee S, Forman CA, Kearns J, Leonard JT, Cohen DA, Nakamura S, DenBaars SP. Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts. Optics Express. 27: 31621-31628. PMID 31684392 DOI: 10.1364/Oe.27.031621 |
0.344 |
|
| 2019 |
Ley R, Chan L, Shapturenka P, Wong M, DenBaars S, Gordon M. Strain relaxation of InGaN/GaN multi-quantum well light emitters via nanopatterning. Optics Express. 27: 30081-30089. PMID 31684261 DOI: 10.1364/Oe.27.030081 |
0.436 |
|
| 2019 |
Anderson R, Cohen D, Mehari S, Nakamura S, DenBaars S. Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN. Optics Express. 27: 22764-22769. PMID 31510562 DOI: 10.1364/Oe.27.022764 |
0.479 |
|
| 2019 |
Saifaddin BK, Iza M, Foronda H, Almogbel A, Zollner CJ, Wu F, Alyamani A, Albadri A, Nakamura S, DenBaars SP, Speck JS. Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC. Optics Express. 27: A1074-A1083. PMID 31510492 DOI: 10.1364/Oe.27.0A1074 |
0.367 |
|
| 2019 |
Kamikawa T, Gandrothula S, Araki M, Li H, Oliva VB, Wu F, Cohen D, Speck JS, Denbaars SP, Nakamura S. Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate. Optics Express. 27: 24717-24723. PMID 31510356 DOI: 10.1364/Oe.27.024717 |
0.318 |
|
| 2019 |
Li H, Wong MS, Khoury M, Bonef B, Zhang H, Chow Y, Li P, Kearns J, Taylor AA, De Mierry P, Hassan Z, Nakamura S, DenBaars SP. Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template. Optics Express. 27: 24154-24160. PMID 31510309 DOI: 10.1364/Oe.27.024154 |
0.381 |
|
| 2019 |
Kearns JA, Back J, Cohen DA, DenBaars SP, Nakamura S. Demonstration of blue semipolar (202¯1¯) GaN-based vertical-cavity surface-emitting lasers. Optics Express. 27: 23707-23713. PMID 31510271 DOI: 10.1364/Oe.27.023707 |
0.321 |
|
| 2019 |
Hamdy KW, Young EC, Alhassan AI, Becerra DL, DenBaars SP, Speck JS, Nakamura S. Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes. Optics Express. 27: 8327-8334. PMID 31052652 DOI: 10.1364/Oe.27.008327 |
0.336 |
|
| 2018 |
Wong MS, Hwang D, Alhassan AI, Lee C, Ley R, Nakamura S, DenBaars SP. High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition. Optics Express. 26: 21324-21331. PMID 30119435 DOI: 10.1364/Oe.26.021324 |
0.369 |
|
| 2018 |
Myzaferi A, Mughal AJ, Cohen DA, Farrell RM, Nakamura S, Speck JS, DenBaars SP. Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes. Optics Express. 26: 12490-12498. PMID 29801286 DOI: 10.1364/Oe.26.012490 |
0.374 |
|
| 2018 |
Shen C, Ng TK, Lee C, Nakamura S, Speck JS, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications. Optics Express. 26: A219-A226. PMID 29609284 DOI: 10.1364/Oe.26.00A219 |
0.341 |
|
| 2018 |
Alhassan AI, Young NG, Farrell RM, Pynn C, Wu F, Alyamani AY, Nakamura S, DenBaars SP, Speck JS. Development of high performance green c-plane III-nitride light-emitting diodes. Optics Express. 26: 5591-5601. PMID 29529761 DOI: 10.1364/Oe.26.005591 |
0.419 |
|
| 2018 |
Mehari S, Cohen DA, Becerra DL, Nakamura S, DenBaars SP. Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers. Optics Express. 26: 1564-1572. PMID 29402030 DOI: 10.1364/Oe.26.001564 |
0.338 |
|
| 2017 |
Li H, Khoury M, Bonef B, Alhassan AI, Mughal AJ, Azimah E, Samsudin MEA, De Mierry P, Nakamura S, Speck J, DenBaars SP. Efficient semipolar (11-22) 550 nm yellow/green InGaN light-emitting diodes on low defect density (11-22) GaN/sapphire templates. Acs Applied Materials & Interfaces. PMID 28960058 DOI: 10.1021/Acsami.7B11718 |
0.417 |
|
| 2017 |
Lee C, Shen C, Cozzan C, Farrell RM, Speck JS, Nakamura S, Ooi BS, DenBaars SP. Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors. Optics Express. 25: 17480-17487. PMID 28789239 DOI: 10.1364/Oe.25.017480 |
0.351 |
|
| 2017 |
Myzaferi A, Reading AH, Farrell RM, Cohen DA, Nakamura S, DenBaars SP. Semipolar III-nitride laser diodes with zinc oxide cladding. Optics Express. 25: 16922-16930. PMID 28789192 DOI: 10.1364/Oe.25.016922 |
0.813 |
|
| 2017 |
Pynn CD, Chan L, Lora Gonzalez F, Berry A, Hwang D, Wu H, Margalith T, Morse DE, DenBaars SP, Gordon MJ. Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring. Optics Express. 25: 15778-15785. PMID 28789090 DOI: 10.1364/Oe.25.015778 |
0.372 |
|
| 2017 |
Kowsz SJ, Young EC, Yonkee BP, Pynn CD, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells. Optics Express. 25: 3841-3849. PMID 28241595 DOI: 10.1364/Oe.25.003841 |
0.377 |
|
| 2017 |
Huang X, Fu H, Chen H, Zhang X, Lu Z, Montes J, Iza M, DenBaars SP, Nakamura S, Zhao Y. Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency Applied Physics Letters. 110: 161105. DOI: 10.1063/1.4980139 |
0.346 |
|
| 2017 |
Forman C, Leonard J, Yonkee B, Pynn C, Mates T, Cohen D, Farrell R, Margalith T, DenBaars S, Speck J, Nakamura S. Semipolar (202̅1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect Journal of Crystal Growth. 464: 197-200. DOI: 10.1016/J.Jcrysgro.2016.11.058 |
0.384 |
|
| 2016 |
Hwang D, Yonkee BP, Addin BS, Farrell RM, Nakamura S, Speck JS, DenBaars S. Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates. Optics Express. 24: 22875-22880. PMID 27828354 DOI: 10.1364/Oe.24.022875 |
0.448 |
|
| 2016 |
Shen C, Lee C, Ng TK, Nakamura S, Speck JS, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth. Optics Express. 24: 20281-20286. PMID 27607634 DOI: 10.1364/Oe.24.020281 |
0.332 |
|
| 2016 |
Alhassan AI, Farrell RM, Saifaddin B, Mughal A, Wu F, DenBaars SP, Nakamura S, Speck JS. High luminous efficacy green light-emitting diodes with AlGaN cap layer. Optics Express. 24: 17868-17873. PMID 27505754 DOI: 10.1364/Oe.24.017868 |
0.436 |
|
| 2016 |
Shen C, Ng TK, Leonard JT, Pourhashemi A, Nakamura S, DenBaars SP, Speck JS, Alyamani AY, El-Desouki MM, Ooi BS. High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. Optics Letters. 41: 2608-2611. PMID 27244426 DOI: 10.1364/Ol.41.002608 |
0.382 |
|
| 2016 |
Yonkee BP, Young EC, Lee C, Leonard JT, DenBaars SP, Speck JS, Nakamura S. Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact. Optics Express. 24: 7816-7822. PMID 27137064 DOI: 10.1364/Oe.24.007816 |
0.357 |
|
| 2016 |
Cantore M, Pfaff N, Farrell RM, Speck JS, Nakamura S, DenBaars SP. High luminous flux from single crystal phosphor-converted laser-based white lighting system. Optics Express. 24: A215-21. PMID 26832576 DOI: 10.1364/Oe.24.00A215 |
0.795 |
|
| 2016 |
Yonkee BP, SaifAddin B, Leonard JT, DenBaars SP, Nakamura S. Flip-chip blue LEDs grown on {2021} bulk GaN substrates utilizing photoelectrochemical etching for substrate removal Applied Physics Express. 9. DOI: 10.7567/Apex.9.056502 |
0.319 |
|
| 2016 |
Young EC, Yonkee BP, Wu F, Oh SH, DenBaars SP, Nakamura S, Speck JS. Hybrid tunnel junction contacts to III-nitride light-emitting diodes Applied Physics Express. 9. DOI: 10.7567/Apex.9.022102 |
0.375 |
|
| 2016 |
Fu H, Lu Z, Zhao X, Zhang Y, DenBaars SP, Nakamura S, Zhao Y. Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$ ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence Journal of Display Technology. 12: 736-741. DOI: 10.1109/Jdt.2016.2521618 |
0.366 |
|
| 2016 |
Young NG, Farrell RM, Oh S, Cantore M, Wu F, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes Applied Physics Letters. 108. DOI: 10.1063/1.4941815 |
0.374 |
|
| 2016 |
Leonard JT, Yonkee BP, Cohen DA, Megalini L, Lee S, Speck JS, Denbaars SP, Nakamura S. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture Applied Physics Letters. 108. DOI: 10.1063/1.4940380 |
0.355 |
|
| 2016 |
Mughal AJ, Oh S, Myzaferi A, Nakamura S, Speck JS, DenBaars SP. High-power LEDs using Ga-doped ZnO current-spreading layers Electronics Letters. 52: 304-306. DOI: 10.1049/El.2015.3982 |
0.317 |
|
| 2016 |
Shen C, Ng TK, Leonard JT, Pourhashemi A, Oubei HM, Alias MS, Nakamura S, Denbaars SP, Speck JS, Alyamani AY, Eldesouki MM, Ooi BS. High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm Acs Photonics. 3: 262-268. DOI: 10.1021/Acsphotonics.5B00599 |
0.406 |
|
| 2015 |
Lee C, Zhang C, Cantore M, Farrell RM, Oh SH, Margalith T, Speck JS, Nakamura S, Bowers JE, DenBaars SP. 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. Optics Express. 23: 16232-7. PMID 26193595 DOI: 10.1364/Oe.23.016232 |
0.322 |
|
| 2015 |
Megalini L, Kuritzky LY, Leonard JT, Shenoy R, Rose K, Nakamura S, Speck JS, Cohen DA, DenBaars SP. Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions Applied Physics Express. 8. DOI: 10.7567/Apex.8.066502 |
0.337 |
|
| 2015 |
Kuritzky LY, Myers DJ, Nedy J, Kelchner KM, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN "double miscut" substrates Applied Physics Express. 8. DOI: 10.7567/Apex.8.061002 |
0.742 |
|
| 2015 |
Megalini L, Becerra DL, Farrell RM, Pourhashemi A, Speck JS, Nakamura S, DenBaars SP, Cohen DA. Continuous-wave operation of a (2021) InGaN laser diode with a photoelectrochemically etched current aperture Applied Physics Express. 8. DOI: 10.7567/Apex.8.042701 |
0.335 |
|
| 2015 |
Young EC, Yonkee BP, Leonard J, Wu F, Denbaars SP, Nakamura S, Speckmaterials JS. Ammonia molecular beam epitaxy technology for UV light emitters 2015 Ieee Summer Topicals Meeting Series, Sum 2015. 137-138. DOI: 10.1109/PHOSST.2015.7248233 |
0.311 |
|
| 2015 |
Lee C, Zhang C, Cantore M, Farrell R, Oh SH, Margalith T, Speck JS, Nakamura S, Bowers JE, DenBaars SP. 2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation 2015 Ieee Summer Topicals Meeting Series, Sum 2015. 112-113. DOI: 10.1109/PHOSST.2015.7248213 |
0.333 |
|
| 2015 |
Nedy JG, Young NG, Kelchner KM, Hu Y, Farrell RM, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Low damage dry etch for III-nitride light emitters Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/8/085019 |
0.78 |
|
| 2015 |
Kowsz SJ, Pynn CD, Oh SH, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4930304 |
0.376 |
|
| 2015 |
Leonard JT, Young EC, Yonkee BP, Cohen DA, Margalith T, DenBaars SP, Speck JS, Nakamura S. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact Applied Physics Letters. 107. DOI: 10.1063/1.4929944 |
0.33 |
|
| 2015 |
Leonard JT, Cohen DA, Yonkee BP, Farrell RM, Margalith T, Lee S, Denbaars SP, Speck JS, Nakamura S. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture Applied Physics Letters. 107. DOI: 10.1063/1.4926365 |
0.347 |
|
| 2015 |
Pan CC, Yan Q, Fu H, Zhao Y, Wu YR, Van De Walle C, Nakamura S, Denbaars SP. High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier Electronics Letters. 51: 1187-1189. DOI: 10.1049/El.2015.1647 |
0.406 |
|
| 2015 |
Young EC, Yonkee BP, Wu F, Saifaddin BK, Cohen DA, DenBaars SP, Nakamura S, Speck JS. Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202-1) AlGaN/GaN buffer layers Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.081 |
0.402 |
|
| 2015 |
Kelchner KM, Kuritzky LY, Nakamura S, Denbaars SP, Speck JS. Stable vicinal step orientations in m-plane GaN Journal of Crystal Growth. 411: 56-62. DOI: 10.1016/J.Jcrysgro.2014.10.032 |
0.717 |
|
| 2014 |
Elias DC, Sivananthan A, Zhang C, Keller S, Chiang HW, Law JJM, Thibeault BJ, Mitchell WJ, Lee S, Carter AD, Huang CY, Chobpattana V, Stemmer S, Denbaars SP, Coldren LA, et al. Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls Japanese Journal of Applied Physics. 53. DOI: 10.7567/Jjap.53.065503 |
0.482 |
|
| 2014 |
Koslow IL, McTaggart C, Wu F, Nakamura S, Speck JS, DenBaars SP. Improved performance of (2021) long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1-xN buffer layers Applied Physics Express. 7. DOI: 10.7567/Apex.7.031003 |
0.792 |
|
| 2014 |
Hardy MT, Wu F, Huang CY, Zhao Y, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes Ieee Photonics Technology Letters. 26: 43-46. DOI: 10.1109/Lpt.2013.2288927 |
0.709 |
|
| 2014 |
Keller S, Li H, Laurent M, Hu Y, Pfaff N, Lu J, Brown DF, Fichtenbaum NA, Speck JS, Denbaars SP, Mishra UK. Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/113001 |
0.757 |
|
| 2014 |
Laurent MA, Gupta G, Wienecke S, Muqtadir AA, Keller S, Denbaars SP, Mishra UK. Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 116. DOI: 10.1063/1.4901834 |
0.302 |
|
| 2014 |
Becerra DL, Zhao Y, Oh SH, Pynn CD, Fujito K, Denbaars SP, Nakamura S. High-power low-droop violet semipolar (30 3 ¯ 1 ¯) InGaN/GaN light-emitting diodes with thick active layer design Applied Physics Letters. 105. DOI: 10.1063/1.4900793 |
0.42 |
|
| 2014 |
Holder CO, Leonard JT, Farrell RM, Cohen DA, Yonkee B, Speck JS, Denbaars SP, Nakamura S, Feezell DF. Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching Applied Physics Letters. 105. DOI: 10.1063/1.4890864 |
0.336 |
|
| 2014 |
Wu F, Zhao Y, Romanov A, Denbaars SP, Nakamura S, Speck JS. Stacking faults and interface rougheningin semipolar (20 2 ̄ 1 ̄) single InGaN quantum wells for long wavelength emission Applied Physics Letters. 104. DOI: 10.1063/1.4871512 |
0.356 |
|
| 2014 |
Ji Y, Liu W, Erdem T, Chen R, Tiam Tan S, Zhang ZH, Ju Z, Zhang X, Sun H, Sun XW, Zhao Y, Denbaars SP, Nakamura S, Volkan Demir H. Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes Applied Physics Letters. 104. DOI: 10.1063/1.4870840 |
0.322 |
|
| 2014 |
Koslow IL, Hardy MT, Shan Hsu P, Wu F, Romanov AE, Young EC, Nakamura S, Denbaars SP, Speck JS. Onset of plastic relaxation in semipolar (11 2 ̄ 2) In xGa1-xN/GaN heterostructures Journal of Crystal Growth. 388: 48-53. DOI: 10.1016/J.Jcrysgro.2013.10.027 |
0.8 |
|
| 2014 |
Marcinkevičius S, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Optical properties and carrier dynamics in m -plane InGaN quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 690-693. DOI: 10.1002/Pssc.201300430 |
0.737 |
|
| 2014 |
Shen C, Ng TK, Janjua B, Alyamani AY, El-Desouki MM, Speck JS, DenBaars SP, Ooi BS. Optical gain and absorption of 420 nm InGaN-based laser diodes grown on m-plane GaN substrate Asia Communications and Photonics Conference, Acpc 2014. |
0.331 |
|
| 2013 |
Brgoch J, Borg CK, Denault KA, Mikhailovsky A, DenBaars SP, Seshadri R. An efficient, thermally stable cerium-based silicate phosphor for solid state white lighting. Inorganic Chemistry. 52: 8010-6. PMID 23822144 DOI: 10.1021/Ic400614R |
0.336 |
|
| 2013 |
Zhao Y, Yan Q, Feezell D, Fujito K, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. Optics Express. 21: A53-9. PMID 23389275 DOI: 10.1364/Oe.21.000A53 |
0.302 |
|
| 2013 |
Keller S, Farrell RM, Iza M, Terao Y, Young N, Mishra UK, Nakamura S, DenBaars SP, Speck JS. Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jc10 |
0.344 |
|
| 2013 |
Kawaguchi Y, Huang CY, Wu YR, Zhao Y, DenBaars SP, Nakamura S. Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jc08 |
0.411 |
|
| 2013 |
Pfaff NA, Kelchner KM, Feezell DF, Nakamura S, DenBaars SP, Speck JS. Thermal performance of violet and blue single-quantum-well nonpolar m-plane InGaN light-emitting diodes Applied Physics Express. 6. DOI: 10.7567/Apex.6.092104 |
0.824 |
|
| 2013 |
Zhao Y, Oh SH, Wu F, Kawaguchi Y, Tanaka S, Fujito K, Speck JS, DenBaars SP, Nakamura S. Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth Applied Physics Express. 6. DOI: 10.7567/Apex.6.062102 |
0.398 |
|
| 2013 |
Kawaguchi Y, Huang SC, Farrell RM, Zhao Y, Speck JS, DenBaars SP, Nakamura S. Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes Applied Physics Express. 6. DOI: 10.7567/Apex.6.052103 |
0.405 |
|
| 2013 |
Holder C, Feezell D, Speck JS, DenBaars SP, Nakamura S. Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 8639. DOI: 10.1117/12.2008277 |
0.435 |
|
| 2013 |
Denbaars SP, Nakamura S, Speck JS. Gallium nitride based light emitting diodes (LEDs) for energy efficient lighting and displays 2013 Saudi International Electronics, Communications and Photonics Conference, Siecpc 2013. DOI: 10.1109/SIECPC.2013.6551030 |
0.369 |
|
| 2013 |
Farell RM, Young EC, Wu F, Nakamura S, Denbaars SP, Speck JS. Development of high-performance nonpolar III-nitride light-emitting devices 2013 Saudi International Electronics, Communications and Photonics Conference, Siecpc 2013. DOI: 10.1109/SIECPC.2013.6550978 |
0.322 |
|
| 2013 |
Feezell DF, Speck JS, Denbaars SP, Nakamura S. Semipolar (2021) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting Ieee/Osa Journal of Display Technology. 9: 190-198. DOI: 10.1109/Jdt.2012.2227682 |
0.391 |
|
| 2013 |
Farrell RM, Al-Heji AA, Neufeld CJ, Chen X, Iza M, Cruz SC, Keller S, Nakamura S, DenBaars SP, Mishra UK, Speck JS. Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells Applied Physics Letters. 103. DOI: 10.1063/1.4844955 |
0.746 |
|
| 2013 |
Armstrong AM, Kelchner K, Nakamura S, Denbaars SP, Speck JS. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN Applied Physics Letters. 103. DOI: 10.1063/1.4841575 |
0.769 |
|
| 2013 |
Hardy MT, Wu F, Shan Hsu P, Haeger DA, Nakamura S, Speck JS, Denbaars SP. True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy Journal of Applied Physics. 114. DOI: 10.1063/1.4829699 |
0.713 |
|
| 2013 |
Young NG, Farrell RM, Hu YL, Terao Y, Iza M, Keller S, Denbaars SP, Nakamura S, Speck JS. High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates Applied Physics Letters. 103. DOI: 10.1063/1.4826483 |
0.343 |
|
| 2013 |
Shan Hsu P, Wu F, Young EC, Romanov AE, Fujito K, Denbaars SP, Speck JS, Nakamura S. Blue and aquamarine stress-relaxed semipolar (11 2 ̄ 2) laser diodes Applied Physics Letters. 103. DOI: 10.1063/1.4826087 |
0.354 |
|
| 2013 |
Pourhashemi A, Farrell RM, Hardy MT, Hsu PS, Kelchner KM, Speck JS, Denbaars SP, Nakamura S. Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202̄1̄) GaN substrates Applied Physics Letters. 103. DOI: 10.1063/1.4824773 |
0.837 |
|
| 2013 |
Marcinkevičius S, Zhao Y, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra Applied Physics Letters. 103. DOI: 10.1063/1.4823589 |
0.724 |
|
| 2013 |
Marcinkevičius S, Kelchner KM, Kuritzky LY, Nakamura S, Denbaars SP, Speck JS. Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells Applied Physics Letters. 103. DOI: 10.1063/1.4820839 |
0.744 |
|
| 2013 |
Hardy MT, Holder CO, Feezell DF, Nakamura S, Speck JS, Cohen DA, Denbaars SP. Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes Applied Physics Letters. 103. DOI: 10.1063/1.4819171 |
0.708 |
|
| 2013 |
Denault KA, Cantore M, Nakamura S, Denbaars SP, Seshadri R. Efficient and stable laser-driven white lighting Aip Advances. 3. DOI: 10.1063/1.4813837 |
0.332 |
|
| 2013 |
Shivaraman R, Kawaguchi Y, Tanaka S, Denbaars SP, Nakamura S, Speck JS. Comparative analysis of 202̄1 and 202̄1 ̄ semipolar GaN light emitting diodes using atom probe tomography Applied Physics Letters. 102. DOI: 10.1063/1.4812363 |
0.324 |
|
| 2013 |
Marcinkevičius S, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Optical properties of extended and localized states in m-plane InGaN quantum wells Applied Physics Letters. 102. DOI: 10.1063/1.4794904 |
0.699 |
|
| 2013 |
Farrell RM, Haeger DA, Fujito K, Denbaars SP, Nakamura S, Speck JS. Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates Journal of Applied Physics. 113. DOI: 10.1063/1.4790636 |
0.358 |
|
| 2013 |
Denault KA, Mikhailovsky AA, Brinkley S, Denbaars SP, Seshadri R. Improving color rendition in solid state white lighting through the use of quantum dots Journal of Materials Chemistry C. 1: 1461-1466. DOI: 10.1039/C2Tc00420H |
0.794 |
|
| 2013 |
Kelchner KM, Kuritzky LY, Fujito K, Nakamura S, Denbaars SP, Speck JS. Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates Journal of Crystal Growth. 382: 80-86. DOI: 10.1016/J.Jcrysgro.2013.08.013 |
0.765 |
|
| 2013 |
Denbaars SP, Feezell D, Kelchner K, Pimputkar S, Pan CC, Yen CC, Tanaka S, Zhao Y, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck JS, Nakamura S. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays Acta Materialia. 61: 945-951. DOI: 10.1016/J.Actamat.2012.10.042 |
0.835 |
|
| 2013 |
Nijikovsky B, Richardson JJ, Garbrecht M, Denbaars SP, Kaplan WD. Microstructure of ZnO films synthesized on MgAl2O4 from low-temperature aqueous solution: Growth and post-annealing Journal of Materials Science. 48: 1614-1622. DOI: 10.1007/S10853-012-6918-9 |
0.697 |
|
| 2013 |
Hardy MT, Holder CO, Nakamura S, Speck JS, Cohen DA, DenBaars SP. Demonstration of true green ITO clad semipolar(2021) InGaN/GaN laser diodes Cleo: Science and Innovations, Cleo_si 2013. CF1F.1. |
0.685 |
|
| 2013 |
Hardy MT, Holder CO, Nakamura S, Speck JS, Cohen DA, Denbaars SP. Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes 2013 Conference On Lasers and Electro-Optics, Cleo 2013. |
0.686 |
|
| 2012 |
Reading AH, Richardson JJ, Pan CC, Nakamura S, DenBaars SP. High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy. Optics Express. 20: A13-9. PMID 22379670 DOI: 10.1364/Oe.20.000A13 |
0.801 |
|
| 2012 |
Choi SB, Bae SY, Lee DS, Kong BH, Cho HK, Song JH, Ahn BJ, Keading JF, Nakamura S, DenBaars SP, Speck JS. Optical characterization of double peak behavior in {101̄1} semipolar light-emitting diodes on miscut m-plane sapphire substrates Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.052101 |
0.385 |
|
| 2012 |
Pan CC, Gilbert T, Pfaff N, Tanaka S, Zhao Y, Feezell D, Speck JS, Nakamura S, DenBaars SP. Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.102103 |
0.822 |
|
| 2012 |
Brinkley SE, Keraly CL, Sonoda J, Weisbuch C, Speck JS, Nakamura S, DenBaars SP. Chip shaping for light extraction enhancement of bulk C-plane light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.032104 |
0.787 |
|
| 2012 |
Farrell RM, Young EC, Wu F, Denbaars SP, Speck JS. Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/2/024001 |
0.342 |
|
| 2012 |
Hardy MT, Nakamura S, Speck JS, Denbaars SP. Suppression of relaxation in (202̄1) InGaN/GaN laser diodes using limited area epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4770367 |
0.717 |
|
| 2012 |
Keller S, Pfaff N, Denbaars SP, Mishra UK. Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (000 1̄) GaN Applied Physics Letters. 101. DOI: 10.1063/1.4764070 |
0.804 |
|
| 2012 |
Young EC, Wu F, Romanov AE, Haeger DA, Nakamura S, Denbaars SP, Cohen DA, Speck JS. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission Applied Physics Letters. 101. DOI: 10.1063/1.4757423 |
0.313 |
|
| 2012 |
Chung RB, Han C, Pan CC, Pfaff N, Speck JS, Denbaars SP, Nakamura S. The reduction of efficiency droop by Al 0.82In 0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4756791 |
0.813 |
|
| 2012 |
Hardy MT, Young EC, Hsu PS, Haeger DA, Koslow IL, Nakamura S, Denbaars SP, Speck JS. Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202̄1) InGaN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4754693 |
0.794 |
|
| 2012 |
Koslow IL, Hardy MT, Shan Hsu P, Dang PY, Wu F, Romanov A, Wu YR, Young EC, Nakamura S, Speck JS, Denbaars SP. Performance and polarization effects in (11 2 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers Applied Physics Letters. 101. DOI: 10.1063/1.4753949 |
0.836 |
|
| 2012 |
Kawaguchi Y, Huang CY, Wu YR, Yan Q, Pan CC, Zhao Y, Tanaka S, Fujito K, Feezell D, Van De Walle CG, Denbaars SP, Nakamura S. Influence of polarity on carrier transport in semipolar (2021̄) and (202̄1) multiple-quantum-well light-emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.4726106 |
0.572 |
|
| 2012 |
Zhao Y, Yan Q, Huang CY, Huang SC, Shan Hsu P, Tanaka S, Pan CC, Kawaguchi Y, Fujito K, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S, Feezell D. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Applied Physics Letters. 100. DOI: 10.1063/1.4719100 |
0.545 |
|
| 2012 |
Hardy MT, Hsu PS, Wu F, Koslow IL, Young EC, Nakamura S, Romanov AE, Denbaars SP, Speck JS. Trace analysis of non-basal plane misfit stress relaxation in (20 2 1) and (30 3̄1̄) semipolar InGaN/GaN heterostructures Applied Physics Letters. 100. DOI: 10.1063/1.4716465 |
0.79 |
|
| 2012 |
Shan Hsu P, Hardy MT, Young EC, Romanov AE, Denbaars SP, Nakamura S, Speck JS. Stress relaxation and critical thickness for misfit dislocation formation in (101̄0) and (3031̄) InGaN/GaN heteroepitaxy Applied Physics Letters. 100. DOI: 10.1063/1.4707160 |
0.635 |
|
| 2012 |
Haeger DA, Young EC, Chung RB, Wu F, Pfaff NA, Tsai M, Fujito K, Denbaars SP, Speck JS, Nakamura S, Cohen DA. 384 nm laser diode grown on a (202̄1) semipolar relaxed AlGaN buffer layer Applied Physics Letters. 100. DOI: 10.1063/1.4704560 |
0.807 |
|
| 2012 |
Hu YL, Farrell RM, Neufeld CJ, Iza M, Cruz SC, Pfaff N, Simeonov D, Keller S, Nakamura S, Denbaars SP, Mishra UK, Speck JS. Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells Applied Physics Letters. 100. DOI: 10.1063/1.4704189 |
0.815 |
|
| 2012 |
Chung RB, Chen HT, Pan CC, Ha JS, Denbaars SP, Nakamura S. The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN Applied Physics Letters. 100. DOI: 10.1063/1.3690878 |
0.498 |
|
| 2012 |
Henry TA, Armstrong A, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.3687700 |
0.753 |
|
| 2012 |
Shan Hsu P, Hardy MT, Wu F, Koslow I, Young EC, Romanov AE, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. 444.9 nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer Applied Physics Letters. 100. DOI: 10.1063/1.3675850 |
0.824 |
|
| 2012 |
Denault KA, George NC, Paden SR, Brinkley S, Mikhailovsky AA, Neuefeind J, Denbaars SP, Seshadri R. A green-yellow emitting oxyfluoride solid solution phosphor Sr 2Ba(AlO 4F) 1-x(SiO 5) x:Ce 3+ for thermally stable, high color rendition solid state white lighting Journal of Materials Chemistry. 22: 18204-18213. DOI: 10.1039/C2Jm33620K |
0.783 |
|
| 2012 |
Matioli E, Brinkley S, Kelchner KM, Hu YL, Nakamura S, DenBaars S, Speck J, Weisbuch C. High-brightness polarized light-emitting diodes Light: Science and Applications. 1. DOI: 10.1038/Lsa.2012.22 |
0.808 |
|
| 2012 |
Kelchner KM, DenBaars SP, Speck JS. GaN Laser Diodes on Nonpolar and Semipolar Planes Semiconductors and Semimetals. 86: 149-182. DOI: 10.1016/B978-0-12-391066-0.00004-6 |
0.771 |
|
| 2012 |
Martyniuk M, Parish G, Marchand H, Fini PT, DenBaars SP, Faraone L. Nanoindentation of laterally overgrown epitaxial gallium nitride Electronic Materials Letters. 8: 111-115. DOI: 10.1007/S13391-012-1074-6 |
0.71 |
|
| 2012 |
Julian N, Mages P, Zhang C, Zhang J, Kraemer S, Stemmer S, Denbaars S, Coldren L, Petroff P, Bowers J. Coalescence of InP epitaxial lateral overgrowth by MOVPE with V/III ratio variation Journal of Electronic Materials. 41: 845-852. DOI: 10.1007/S11664-012-2020-Y |
0.489 |
|
| 2012 |
Garrett GA, Rotella P, Shen H, Wraback M, Haeger DA, Chung RB, Pfaff N, Young EC, Denbaars SP, Speck JS, Cohen DA. Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN Physica Status Solidi (B) Basic Research. 249: 507-510. DOI: 10.1002/Pssb.201100528 |
0.781 |
|
| 2012 |
Haeger DA, Young EC, Chung RB, Wu F, Romanov AE, Nakamura S, Denbaars SP, Speck JS, Cohen DA. 384 nm AlGaN diode lasers on relaxed semipolar buffers 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.302 |
|
| 2012 |
Pan CC, Nakamura S, DenBaars SP. High light extraction efficiency light-emitting diodes grown on bulk GaN and sapphire substrates using vertical transparent package 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.634 |
|
| 2012 |
Huang CY, Zhao Y, Hardy MT, Fujito K, Feezell DF, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021̄) laser diodes (λ=505nm) with wavelength-stable InGaN/GaN quantum wells 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.699 |
|
| 2012 |
Zhao Y, Huang CY, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021) blue and green InGaN light-emitting diodes 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.588 |
|
| 2012 |
Hardy MT, Hsu PS, Koslow I, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.813 |
|
| 2012 |
Huang CY, Alam Y, Hardy MT, Fujito K, Feezell DF, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021) laser diodes (λ=505nm) with wavelength-stable InGaN/GaN quantum wells Cleo: Science and Innovations, Cleo_si 2012. CTu2N.5. |
0.698 |
|
| 2012 |
Hardy MT, Hsu PS, Koslow I, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode 2021 Cleo: Science and Innovations, Cleo_si 2012. CTu2N.2. |
0.812 |
|
| 2012 |
Raring JW, Schmidt MC, Poblenz C, Huang H, Bai C, Rudy P, Speck JS, DenBaars SP, Nakamura S. Recent progress in green and blue ingan laser diodes for projection display applications Proceedings of the International Display Workshops. 3: 1496-1497. |
0.563 |
|
| 2011 |
Im WB, George N, Kurzman J, Brinkley S, Mikhailovsky A, Hu J, Chmelka BF, DenBaars SP, Seshadri R. Efficient and color-tunable oxyfluoride solid solution phosphors for solid-state white lighting. Advanced Materials (Deerfield Beach, Fla.). 23: 2300-5. PMID 21480397 DOI: 10.1002/Adma.201003640 |
0.77 |
|
| 2011 |
Farrell RM, Haeger DA, Hsu PS, Hardy MT, Kelchner KM, Fujito K, Feezell DF, Mishra UK, DenBaars SP, Speck JS, Nakamura S. AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-Type AlGaN etch stop Applied Physics Express. 4. DOI: 10.1143/Apex.4.092105 |
0.823 |
|
| 2011 |
Zhao Y, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. High-power blue-violet semipolar (202̄1̄) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2 Applied Physics Express. 4. DOI: 10.1143/Apex.4.082104 |
0.592 |
|
| 2011 |
Schmidt MC, Poblenz C, Chang YC, Li B, Mondry MJ, Iveland J, Krames MR, Craig R, Raring JW, Speck JS, DenBaars SP, Nakamura S. High performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates Proceedings of Spie - the International Society For Optical Engineering. 8039. DOI: 10.1117/12.872023 |
0.621 |
|
| 2011 |
Raring JW, Schmidt MC, Poblenz C, Lin Y, Bai C, Rudy P, Speck JS, Denbaars SP, Nakamura S. Recent progress in InGaN-based laser diodes fabricated on nonpolar/semipolar substrates Ieee Photonic Society 24th Annual Meeting, Pho 2011. 503-504. DOI: 10.1109/Pho.2011.6110781 |
0.59 |
|
| 2011 |
Haeger DA, Holder C, Farrell RM, Hsu PS, Kelchner KM, Fujito K, Cohen DA, Denbaars SP, Speck JS, Nakamura S. Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes Device Research Conference - Conference Digest, Drc. 261-262. DOI: 10.1109/DRC.2011.5994523 |
0.764 |
|
| 2011 |
Wu F, Young EC, Koslow I, Hardy MT, Hsu PS, Romanov AE, Nakamura S, Denbaars SP, Speck JS. Observation of non-basal slip in semipolar In xGa 1-xN/GaN heterostructures Applied Physics Letters. 99. DOI: 10.1063/1.3671113 |
0.79 |
|
| 2011 |
Huang CY, Hardy MT, Fujito K, Feezell DF, Speck JS, Denbaars SP, Nakamura S. Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20 21 ̄) InGaN/GaN quantum wells Applied Physics Letters. 99. DOI: 10.1063/1.3666791 |
0.691 |
|
| 2011 |
Brinkley SE, Pfaff N, Denault KA, Zhang Z, Hintzen HT, Seshadri R, Nakamura S, Denbaars SP. Robust thermal performance of Sr 2Si 5N 8:Eu 2+: An efficient red emitting phosphor for light emitting diode based white lighting Applied Physics Letters. 99. DOI: 10.1063/1.3666785 |
0.816 |
|
| 2011 |
Farrell RM, Haeger DA, Hsu PS, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes Applied Physics Letters. 99. DOI: 10.1063/1.3657149 |
0.357 |
|
| 2011 |
Farrell RM, Haeger DA, Hsu PS, Schmidt MC, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes Applied Physics Letters. 99. DOI: 10.1063/1.3656970 |
0.604 |
|
| 2011 |
Huang CY, Yan Q, Zhao Y, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. Influence of Mg-doped barriers on semipolar (202̄1) multiple-quantum-well green light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3647560 |
0.354 |
|
| 2011 |
Neufeld CJ, Cruz SC, Farrell RM, Iza M, Keller S, Nakamura S, Denbaars SP, Speck JS, Mishra UK. Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells Applied Physics Letters. 99. DOI: 10.1063/1.3624850 |
0.772 |
|
| 2011 |
Zhao Y, Tanaka S, Yan Q, Huang CY, Chung RB, Pan CC, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3619826 |
0.586 |
|
| 2011 |
Matioli E, Brinkley S, Kelchner KM, Nakamura S, Denbaars S, Speck J, Weisbuch C. Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals Applied Physics Letters. 98. DOI: 10.1063/1.3602319 |
0.815 |
|
| 2011 |
Matioli E, Neufeld C, Iza M, Cruz SC, Al-Heji AA, Chen X, Farrell RM, Keller S, DenBaars S, Mishra U, Nakamura S, Speck J, Weisbuch C. High internal and external quantum efficiency InGaN/GaN solar cells Applied Physics Letters. 98. DOI: 10.1063/1.3540501 |
0.777 |
|
| 2011 |
Tanaka S, Zhao Y, Koslow I, Pan CC, Chen HT, Sonoda J, Denbaars SP, Nakamura S. Droop improvement in high current range on PSS-LEDs Electronics Letters. 47: 335-336. DOI: 10.1049/El.2010.3306 |
0.806 |
|
| 2011 |
Richardson JJ, Estrada D, Denbaars SP, Hawker CJ, Campos LM. A facile route to patterned epitaxial ZnO nanostructures by soft lithography Journal of Materials Chemistry. 21: 14417-14419. DOI: 10.1039/C1Jm13167B |
0.714 |
|
| 2011 |
Richardson JJ, Goh GKL, Le HQ, Liew LL, Lange FF, Denbaars SP. Thermally induced pore formation in epitaxial ZnO films grown from low temperature aqueous solution Crystal Growth and Design. 11: 3558-3563. DOI: 10.1021/Cg200528E |
0.702 |
|
| 2011 |
Hardy MT, Feezell DF, Denbaars SP, Nakamura S. Group III-nitride lasers: A materials perspective Materials Today. 14: 408-415. DOI: 10.1016/S1369-7021(11)70185-7 |
0.672 |
|
| 2011 |
Hardy MT, Farrell RM, Hsu PS, Haeger DA, Kelchner K, Fujito K, Chakraborty A, Cohen DA, Nakamura S, Speck JS, Denbaars SP. Effect of n-AlGaN cleave assistance layers on the morphology of c -plane cleaved facets for m -plane InGaN/GaN laser diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2226-2228. DOI: 10.1002/Pssc.201001149 |
0.822 |
|
| 2011 |
Hsu PS, Sonoda J, Kelchner KM, Tyagi A, Farrell RM, Haeger DA, Young EC, Romanov AE, Fujito K, Ohta H, Denbaars SP, Speck JS, Nakamura S. Blue InGaN/GaN laser diodes grown on (333̄1̄) free-standing GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2390-2392. DOI: 10.1002/Pssc.201001012 |
0.776 |
|
| 2011 |
Zhang C, Mages P, Julian N, Coldren L, DenBaars S, Bowers J. Growth habit control of epitaxial lateral overgrown InP by MOCVD Optics Infobase Conference Papers. |
0.46 |
|
| 2011 |
Raring JW, Schmidt MC, Poblenz C, Lin Y, Goutain E, Huang H, Bai C, Rudy P, Speck JS, Denbaars SP, Nakamura S. Green and blue InGaN-based laser diodes for display applications Proceedings of the International Display Workshops. 3: 2061-2063. |
0.586 |
|
| 2011 |
Norberg EJ, Guzzon RS, Parker JS, DenBaars SP, Coldren LA. An InGaAsP/InP integration platform with low loss deeply etched waveguides and record SOA RF-linearity Optics Infobase Conference Papers. |
0.418 |
|
| 2011 |
Raring JW, Schmidt MC, Poblenz C, Mondry MJ, Rudy P, Speck JS, DenBaars SP, Nakamura S. Invited paper: Progress in green and blue laser diodes and their application in pico projection systems 49th Annual Sid Symposium, Seminar, and Exhibition 2011, Display Week 2011. 2: 677-680. |
0.54 |
|
| 2011 |
Feezell D, Speck J, Denbaars S, Nakamura S. Optoelectronic devices grown on nonpolar and semipolar free-standing GaN substrates 2011 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2011. |
0.358 |
|
| 2010 |
Yamamoto S, Zhao Y, Pan CC, Chung RB, Fujito K, Sonoda J, DenBaars SP, Nakamura S. High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates Applied Physics Express. 3. DOI: 10.1143/Apex.3.122102 |
0.622 |
|
| 2010 |
Zhao Y, Sonoda J, Pan CC, Brinkley S, Koslow I, Fujito K, Ohta H, DenBaars SP, Nakamura S. 30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique Applied Physics Express. 3. DOI: 10.1143/Apex.3.102101 |
0.822 |
|
| 2010 |
Raring JW, Hall EM, Schmidt MC, Poblenz C, Li B, Pfister N, Kebort D, Chang YC, Feezell DF, Craig R, Speck JS, DenBaars SP, Nakamura S. State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes Proceedings of Spie - the International Society For Optical Engineering. 7686. DOI: 10.1117/12.849713 |
0.631 |
|
| 2010 |
Raring JW, Hall EM, Schmidt MC, Poblenz C, Li B, Pfister N, Feezell DF, Craig R, Speck JS, DenBaars SP, Nakamura S. High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.840783 |
0.626 |
|
| 2009 |
Im WB, Fourré Y, Brinkley S, Sonoda J, Nakamura S, DenBaars SP, Seshadri R. Substitution of oxygen by fluorine in the GdSr2AlO5:Ce3+ phosphors: Gd1-xSr2+xAlO5-xFx solid solutions for solid state white lighting. Optics Express. 17: 22673-9. PMID 20052193 DOI: 10.1364/Oe.17.022673 |
0.764 |
|
| 2008 |
Masui H, Nakamura S, DenBaars SP. Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes. Applied Optics. 47: 88-92. PMID 18157281 |
0.63 |
|
| 2008 |
Keller S, Suh CS, Fichtenbaum NA, Furukawa M, Chu R, Chen Z, Vijayraghavan K, Rajan S, Denbaars SP, Speck JS, Mishra UK. Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures Journal of Applied Physics. 104. DOI: 10.1063/1.3006132 |
0.342 |
|
| 2008 |
McGroddy K, David A, Matioli E, Iza M, Nakamura S, Denbaars S, Speck JS, Weisbuch C, Hu EL. Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes Applied Physics Letters. 93. DOI: 10.1063/1.2978068 |
0.446 |
|
| 2008 |
Imer B, Schmidt M, Haskell B, Rajan S, Zhong B, Kim K, Wu F, Mates T, Keller S, Mishra UK, Nakamura S, Speck JS, DenBaars SP. Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) Physica Status Solidi (a) Applications and Materials Science. 205: 1705-1712. DOI: 10.1002/Pssa.200723403 |
0.836 |
|
| 2007 |
Masui H, Fellows NN, Sato H, Asamizu H, Nakamura S, DenBaars SP. Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes. Applied Optics. 46: 5974-8. PMID 17694152 |
0.67 |
|
| 2007 |
Feezell DF, Schmidt MC, Farrell RM, Kim KC, Saito M, Fujito K, Cohen DA, Speck JS, DenBaars SP, Nakamura S. AlGaN-cladding-free nonpolar InGaN/GaN laser diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L284-L286. DOI: 10.1143/Jjap.46.L284 |
0.677 |
|
| 2007 |
Pattison PM, David A, Sharma R, Weisbuch C, DenBaars S, Nakamura S. Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness Applied Physics Letters. 90. DOI: 10.1063/1.2430913 |
0.479 |
|
| 2006 |
Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, et al. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nature Materials. 5: 810-6. PMID 16951678 DOI: 10.1038/Nmat1726 |
0.792 |
|
| 2006 |
Raring JW, Sysak MN, Tauke-Pedretti A, Dummer M, Skogen EJ, Barton JS, DenBaars SP, Coldren LA. Advanced integration schemes for high-functionality/high-performance photonic integrated circuits Proceedings of Spie - the International Society For Optical Engineering. 6126. DOI: 10.1117/12.655999 |
0.385 |
|
| 2006 |
Reine MB, Hairston A, Lamarre P, Wong KK, Tobin SP, Sood AK, Cooke C, Pophristic M, Guo S, Peres B, Singh R, Eddy CR, Chowdhury U, Wong MM, Dupuis RD, ... ... DenBaars SP, et al. Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 6119. DOI: 10.1117/12.653645 |
0.331 |
|
| 2006 |
Piprek J, Farrell R, DenBaars S, Nakamura S. Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers Ieee Photonics Technology Letters. 18: 7-9. DOI: 10.1109/Lpt.2005.860045 |
0.483 |
|
| 2006 |
Raring JW, Johansson LA, Skogen EJ, Sysak MN, Poulsen HN, Denbaars SP, Coldren LA. 40 Gbit/s photonic receivers integrating UTC photodiodes with high- and low-confinement SOAs using quantum well intermixing and MOCVD regrowth Electronics Letters. 42: 942-943. DOI: 10.1049/El:20061368 |
0.468 |
|
| 2006 |
Moe CG, Wu Y, Piprek J, Keller S, Speck JS, DenBaars SP, Emerson D. AlGaN/AIN distributed bragg reflectors for deep ultraviolet wavelengths Physica Status Solidi (a) Applications and Materials Science. 203: 1915-1919. DOI: 10.1002/Pssa.200622076 |
0.713 |
|
| 2006 |
Lübbert D, Mikulík P, Pernot P, Helfen L, Craven MD, Keller S, DenBaars S, Baumbach T. X-ray microdiffraction imaging investigations of wing tilt in epitaxially overgrown GaN Physica Status Solidi (a) Applications and Materials Science. 203: 1733-1738. DOI: 10.1002/Pssa.200565251 |
0.672 |
|
| 2005 |
Cohen DA, Masui H, Schmidt M, Brendan-Moran, Denbaars SP. Chip-scale fluorescence sensors Proceedings of Spie - the International Society For Optical Engineering. 6008. DOI: 10.1117/12.632493 |
0.722 |
|
| 2005 |
Yu H, McCarthy L, Rajan S, Keller S, Denbaars S, Speck J, Mishra U. Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts Ieee Electron Device Letters. 26: 283-285. DOI: 10.1109/Led.2005.846583 |
0.327 |
|
| 2005 |
Raring JW, Skogen EJ, Barton JS, Wang CS, DenBaars SP, Coldren LA. Quantum well intermixing and MOCVD regrowth for monolithic integration of 40 Gbit/s UTC type photodiodes with QW based components Electronics Letters. 41: 1033-1034. DOI: 10.1049/El:20051879 |
0.506 |
|
| 2004 |
McCarthy LS, Zhang NQ, Xing H, Moran B, DenBaars S, Mishra UK. High voltage AlGaN/GaN heterojunction transistors International Journal of High Speed Electronics and Systems. 14: 225-243. DOI: 10.1142/S0129156404002314 |
0.547 |
|
| 2004 |
Piprek J, Moe C, Keller S, Nakamura S, DenBaars SP. Internal efficiency analysis of 280 nm light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 5594: 177-184. DOI: 10.1117/12.567084 |
0.757 |
|
| 2004 |
Piprek J, Katona T, DenBaars SP, Li S. 3D simulation and analysis of AlGaN/GaN ultraviolet light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 5366: 127-136. DOI: 10.1117/12.543266 |
0.713 |
|
| 2003 |
Estrada S, Champlain J, Wang C, Stonas A, Coldren L, DenBaars S, Mishra U, Hu E. Wafer-fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor with uid-GaAs Base-Collector Setback Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y10.20 |
0.6 |
|
| 2003 |
Barton JS, Skogen EJ, Mašanovic M, Raring J, Sysak M, Johansson L, DenBaars SP, Coldren LA. Photonic Integrated Circuits based on Sampled-Grating Distributed-Bragg-Reflector Lasers Proceedings of Spie - the International Society For Optical Engineering. 4998: 43-54. DOI: 10.1117/12.476542 |
0.513 |
|
| 2003 |
Paidi V, Xie S, Coffie R, Moran B, Heikman S, Keller S, Chini A, DenBaars SP, Mishra UK, Long S, Rodwell MJW. High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology Ieee Transactions On Microwave Theory and Techniques. 51: 643-652. DOI: 10.1109/Tmtt.2002.807682 |
0.663 |
|
| 2003 |
Estrada S, Huntington A, Stonas A, Xing H, Mishra U, DenBaars S, Coldren L, Hu E. n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750°C Applied Physics Letters. 83: 560-562. DOI: 10.1063/1.1592887 |
0.546 |
|
| 2003 |
Estrada S, Xing H, Stonas A, Huntington A, Mishra U, DenBaars S, Coldren L, Hu E. Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor Applied Physics Letters. 82: 820-822. DOI: 10.1063/1.1541946 |
0.557 |
|
| 2002 |
Estrada S, Stonas A, Huntington A, Xing H, Coldren L, DenBaars S, Mishra U, Hu E. The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L12.10 |
0.565 |
|
| 2001 |
Haberer ED, Woods M, Stonas A, Chen CH, Keller S, Hansen M, Mishra U, DenBaars S, Bowers J, Hu EL. Investigation of sidewall recombination in GaN using a quantum well probe Materials Research Society Symposium - Proceedings. 639: G11.21.1-G11.21.5. DOI: 10.1557/Proc-639-G11.21 |
0.427 |
|
| 2001 |
Flynn M, Smith R, Abraham P, DenBaars S. Control of a III-V MOCVD process using ultraviolet absorption and ultrasonic concentration monitoring Ieee Transactions On Control Systems Technology. 9: 728-740. DOI: 10.1109/87.944468 |
0.319 |
|
| 2000 |
Zhang Y, Smorchkova Y, Elsass C, Keller S, Ibbetson J, DenBaars S, Mishra U, Singh J. Polarization effects and transport in AlGaN/GaN system Journal of Vacuum Science & Technology B. 18: 2322-2327. DOI: 10.1116/1.1306298 |
0.367 |
|
| 2000 |
Zhang Y, Smorchkova IP, Elsass CR, Keller S, Ibbetson JP, Denbaars S, Mishra UK, Singh J. Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies Journal of Applied Physics. 87: 7981-7987. DOI: 10.1063/1.373483 |
0.316 |
|
| 2000 |
Keller S, Parish G, Speck JS, DenBaars SP, Mishra UK. Dislocation reduction in GaN films through selective island growth of InGaN Applied Physics Letters. 77: 2665-2667. DOI: 10.1063/1.1319528 |
0.408 |
|
| 1999 |
Zhang N-, Ibbetson JP, Keller S, Vetury R, DenBaars S, Mishra UK. High Voltage GaN HEMTs The Japan Society of Applied Physics. 1999: 212-213. DOI: 10.7567/Ssdm.1999.C-5-4 |
0.33 |
|
| 1999 |
Kwon Y, Gainer GH, Bidnyk S, Cho YH, Song JJ, Hansen M, Denbaars SP. Comparison Study of Structural and Optical Properties of InxGa1-xN/GaN Quantum Wells with Different in Compositions Mrs Proceedings. 595. DOI: 10.1557/S1092578300005342 |
0.412 |
|
| 1999 |
Marchand H, Zhang N, Zhao L, Golan Y, Rosner S, Girolami G, Fini PT, Ibbetson J, Keller S, DenBaars S, Speck JS, Mishra UK. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer Mrs Internet Journal of Nitride Semiconductor Research. 4. DOI: 10.1557/S1092578300000582 |
0.666 |
|
| 1999 |
Berkowicz E, Gershoni D, Bahir G, Abare A, DenBaars S, Coldren L. Optical Spectroscopy of InGaN/GaN Quantum Wells Physica Status Solidi (B). 216: 291-300. DOI: 10.1002/(SICI)1521-3951(199911)216:1<291::AID-PSSB291>3.0.CO;2-O |
0.445 |
|
| 1998 |
Marchand H, Ibbetson J, Fini PT, Kozodoy P, Keller S, DenBaars S, Speck JS, Mishra UK. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD Mrs Internet Journal of Nitride Semiconductor Research. 3. DOI: 10.1557/S1092578300000752 |
0.643 |
|
| 1998 |
Abare AC, Mack MP, Hansen M, Sink RK, Kozodoy P, Keller S, Speck JS, Bowers JE, Mishra UK, Coldren LA, DenBaars SP. Cleaved and etched facet nitride laser diodes Ieee Journal On Selected Topics in Quantum Electronics. 4: 505-508. DOI: 10.1109/2944.704109 |
0.518 |
|
| 1998 |
Bidnyk S, Schmidt TJ, Cho YH, Gainer GH, Song JJ, Keller S, Mishra UK, Denbaars SP. High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells Applied Physics Letters. 72: 1623-1625. DOI: 10.1063/1.121133 |
0.414 |
|
| 1997 |
Kozlovsky V, Krysa A, Skyasyrsky Y, Popov Y, Abare A, Mack M, Keller S, Mishra UK, Coldren L, DenBaars S, Tiberi MD, George T. Electron Beam Pumped MQW InGaN/GaN Laser Mrs Internet Journal of Nitride Semiconductor Research. 2. DOI: 10.1557/S1092578300001642 |
0.533 |
|
| 1997 |
Kuball M, Jeon E, Song Y, Nurmikko AV, Kozodoy P, Abare A, Keller S, Coldren LA, Mishra UK, DenBaars SP, Steigerwald DA. Gain spectroscopy on InGaN/GaN quantum well diodes Applied Physics Letters. 70: 2580-2582. DOI: 10.1063/1.118925 |
0.589 |
|
| 1997 |
Mack M, Abare A, Aizcorbe M, Kozodoy P, Keller S, Mishra UK, Coldren L, DenBaars S. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD Mrs Internet Journal of Nitride Semiconductor Research. 2. DOI: 10.1016/S0022-0248(98)00305-4 |
0.613 |
|
| 1996 |
Babic DI, Jayaraman V, Margalit NM, Streubel K, Heimbuch ME, Mirin RP, Thibeault BJ, Bowers JE, Hu EL, Denbaars S. Long-wavelength vertical-cavity surface-emitting laser diodes Materials Research Society Symposium - Proceedings. 421: 63-74. DOI: 10.1557/Proc-421-63 |
0.446 |
|
| 1996 |
Parikh P, Kiziloglu K, Mondry M, Chavarkar P, Keller B, Denbaars S, Mishra U. Inp-Based Devices And Their Applications For Merged Fet-Hbt Technologies Microwave and Optical Technology Letters. 11: 121-125. DOI: 10.1002/(Sici)1098-2760(19960220)11:3<121::Aid-Mop3>3.0.Co;2-N |
0.303 |
|
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