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Daniel S. Green, Ph.D. - Publications

Affiliations: 
2006 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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36 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Green DS, Dohrman CL, Demmin J, Zheng Y, Chang T. A Revolution on the Horizon from DARPA: Heterogeneous Integration for Revolutionary Microwave\/Millimeter-Wave Circuits at DARPA: Progress and Future Directions Ieee Microwave Magazine. 18: 44-59. DOI: 10.1109/Mmm.2016.2635811  0.393
2014 Green DS, Dohrman CL, Kane AS, Chang TH. Materials and integration strategies for modern RF integrated circuits Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2014.6978567  0.333
2011 Heller ER, Vetury R, Green DS. Development of a versatile physics-based finite-element model of an AlGaN/GaN HEMT capable of accommodating process and epitaxy variations and calibrated using multiple DC parameters Ieee Transactions On Electron Devices. 58: 1091-1095. DOI: 10.1109/Ted.2011.2107913  0.666
2010 Fang ZQ, Claflin B, Look DC, Green DS, Vetury R. Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers Journal of Applied Physics. 108. DOI: 10.1063/1.3488610  0.685
2009 Trew R, Green D, Shealy J. AlGaN/GaN HFET reliability Ieee Microwave Magazine. 10: 116-127. DOI: 10.1109/Mmm.2009.932286  0.474
2009 Krishnamurthy K, Green D, Vetury R, Poulton M, Martin J. 0.5-2.5 GHz, 10W MMIC power amplifier in GaN HEMT technology Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/csics.2009.5315739  0.679
2009 Beechem T, Christensen A, Green DS, Graham S. Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy Journal of Applied Physics. 106. DOI: 10.1063/1.3267157  0.463
2009 Fang ZQ, Farlow GC, Claflin B, Look DC, Green DS. Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes Journal of Applied Physics. 105. DOI: 10.1063/1.3151952  0.419
2008 Green DS, Brown JD, Vetury R, Lee S, Gibb SR, Krishnamurthy K, Poulton MJ, Martin J, Shealy JB. Status of GaN HEMT performance and reliability Proceedings of Spie - the International Society For Optical Engineering. 6894. DOI: 10.1117/12.763781  0.705
2008 Lee S, Vetury R, Brown JD, Gibb SR, Cai WZ, Sun J, Green DS, Shealy J. Reliability assessment of AlGaN/GaN HEMT technology on SIC for 48V applications Ieee International Reliability Physics Symposium Proceedings. 446-449. DOI: 10.1109/RELPHY.2008.4558926  0.637
2008 Beechem T, Christensen A, Graham S, Green D. Micro-Raman thermometry in the presence of complex stresses in GaN devices Journal of Applied Physics. 103. DOI: 10.1063/1.2940131  0.353
2008 Green DS, Vembu B, Hepper D, Gibb SR, Jin D, Vetury R, Shealy JB, Beechem LT, Graham S. GaN HEMT thermal behavior and implications for reliability testing and analysis Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2026-2029. DOI: 10.1002/Pssc.200778722  0.659
2006 Brown JD, Green DS, Gibb SR, Shealy JB, McKenna J, Poulton M, Lee S, Gratzer K, Hosse B, Mercier T, Yang Y, Young MG, Vetury R. Performance, reliability, and manufacturability of AlGaN/GaN high electron mobility transistors on silicon carbide substrates Ecs Transactions. 3: 161-179. DOI: 10.1149/1.2357206  0.686
2006 Zhou X, Yu ET, Green DS, Speck JS. Dependence of local electronic structure in p -type GaN on crystal polarity and presence of inversion domain boundaries Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 245-249. DOI: 10.1116/1.2162577  0.327
2006 Poulton MJ, Leverich WK, Garber P, Shealy JB, Vetury R, Brown JD, Green DS, Gibb SR, Choi DK. AlGaN/GaN 120W WCDMA doherty amplifier with digital pre-distortion correction Ieee Wireless and Microwave Technology Conference, Wamicon 2006. DOI: 10.1109/WAMICON.2006.351919  0.659
2006 Vetury R, Shealy JB, Green DS, McKenna J, Brown JD, Gibb SR, Leverich K, Garber PM, Poulton MJ. Performance and RF reliability of GaN-on-SiC HEMT's using dual-gate architectures Ieee Mtt-S International Microwave Symposium Digest. 714-717. DOI: 10.1109/MWSYM.2006.249733  0.66
2006 Poulton MJ, Leverich WK, Shealy JB, Vetury R, Brown JD, Green DS, Gibb SR. Linearity and efficiency performance of GaN HEMTs with digital pre-distortion correction Ieee Mtt-S International Microwave Symposium Digest. 1327-1330. DOI: 10.1109/MWSYM.2006.249493  0.677
2006 Conlon JP, Zhang N, Poulton MJ, Shealy JB, Vetury R, Green DS, Brown JD, Gibb S. GaN wide band power integrated circuits Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 85-88. DOI: 10.1109/CSICS.2006.319885  0.672
2006 Armstrong A, Poblenz C, Green DS, Mishra UK, Speck JS, Ringel SA. Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy Applied Physics Letters. 88. DOI: 10.1063/1.2179375  0.314
2005 Armstrong A, Green D, Arehart AR, Mishra UK, Speck JS, Ringel SA. Carbon-related deep states in compensated n-type and semi-insulating GaN:C and their influence on yellow luminescence Materials Research Society Symposium Proceedings. 831: 311-316. DOI: 10.1557/Proc-831-E5.7  0.303
2005 Vetury R, Wei Y, Green DS, Gibb SR, Mercier TW, Leverich K, Garber PM, Poulton MJ, Shealy JB. High power, high efficiency, AlGaN/GaN HEMT technology for wireless base station applications Ieee Mtt-S International Microwave Symposium Digest. 2005: 487-490. DOI: 10.1109/MWSYM.2005.1516636  0.666
2005 Armstrong A, Arehart AR, Green D, Mishra UK, Speck JS, Ringel SA. Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon Journal of Applied Physics. 98. DOI: 10.1063/1.2005379  0.329
2005 Armstrong A, Arehart A, Green D, Speck JS, Mishra UK, Ringel SA. A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si Physica Status Solidi C: Conferences. 2: 2411-2414. DOI: 10.1002/Pssc.200461594  0.326
2004 Rajan S, Waltereit P, Poblenz C, Heikman SJ, Green DS, Speck JS, Mishra UK. Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE Ieee Electron Device Letters. 25: 247-249. DOI: 10.1109/Led.2004.826977  0.658
2004 Green DS, Mishra UK, Speck JS. Carbon doping of GaN with CBr 4 in radio-frequency plasma-assisted molecular beam epitaxy Journal of Applied Physics. 95: 8456-8462. DOI: 10.1063/1.1755431  0.3
2004 Waltereit P, Sato H, Poblenz C, Green DS, Brown JS, McLaurin M, Katona T, DenBaars SP, Speck JS, Liang JH, Kato M, Tamura H, Omori S, Funaoka C. Blue gan-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5% Applied Physics Letters. 84: 2748-2750. DOI: 10.1063/1.1705721  0.444
2004 Green DS, Gibb SR, Hosse B, Vetury R, Grider DE, Smart JA. Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability Journal of Crystal Growth. 272: 285-292. DOI: 10.1016/J.Jcrysgro.2004.08.129  0.722
2004 Tavernier PR, Margalith T, Williams J, Green DS, Keller S, DenBaars SP, Mishra UK, Nakamura S, Clarke DR. The growth of N-face GaN by MOCVD: Effect of Mg, Si, and In Journal of Crystal Growth. 264: 150-158. DOI: 10.1016/J.Jcrysgro.2004.01.023  0.334
2003 Xing H, Green DS, Yu H, Mates T, Kozodoy P, Keller S, DenBaars SP, Mishra UK. Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition Japanese Journal of Applied Physics. 42: 50-53. DOI: 10.1143/Jjap.42.50  0.555
2003 Green DS, Haus E, Wu F, Chen L, Mishra UK, Speck JS. Polarity control during molecular beam epitaxy growth of Mg-doped GaN Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1804-1811. DOI: 10.1116/1.1589511  0.325
2003 Shen L, Smochkova IP, Green DS, Heikman S, Mishra UK. GaN planar-doped-barrier electron emitter with piezoelectric surface barrier lowering Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 540-543. DOI: 10.1116/1.1527646  0.636
2003 Heikman S, Keller S, Green DS, DenBaars SP, Mishra UK. High conductivity modulation doped AlGaN/GaN multiple channel heterostructures Journal of Applied Physics. 94: 5321-5325. DOI: 10.1063/1.1610244  0.374
2003 Sato H, Waltereit P, Green DS, Poblenz C, Katona T, DenBaars SP, Speck JS, Tamura H, Funaoka C. Blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy Physica Status Solidi C: Conferences. 2193-2197. DOI: 10.1002/Pssc.200303299  0.483
2002 Jena D, Heikman S, Green D, Buttari D, Coffie R, Xing H, Keller S, DenBaars S, Speck JS, Mishra UK, Smorchkova I. Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys Applied Physics Letters. 81: 4395-4397. DOI: 10.1063/1.1526161  0.737
2001 Xing H, Keller S, Wu YF, McCarthy L, Smorchkova IP, Buttari D, Coffie R, Green DS, Parish G, Heikman S, Shen L, Zhang N, Xu JJ, Keller BP, DenBaars SP, et al. Gallium nitride based transistors Journal of Physics Condensed Matter. 13: 7139-7157. DOI: 10.1088/0953-8984/13/32/317  0.723
2001 Xing H, Green DS, McCarthy L, Smorchkova IP, Chavarkar P, Mates T, Keller S, DenBaars S, Speck J, Mishra UK. Progress in gallium nitride-based bipolar transistors Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 125-130.  0.753
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