| Year |
Citation |
Score |
| 2020 |
Blumenschein N, Kadlec C, Romanyuk O, Paskova T, Muth JF, Kadlec F. Dielectric and conducting properties of unintentionally and Sn-doped β-Ga2O3 studied by terahertz spectroscopy Journal of Applied Physics. 127: 165702. DOI: 10.1063/1.5143735 |
0.367 |
|
| 2019 |
Blumenschein N, Paskova T, Muth JF. Effect of Growth Pressure on PLD‐Deposited Gallium Oxide Thin Films for Deep‐UV Photodetectors Physica Status Solidi (a). 216: 1900098. DOI: 10.1002/Pssa.201900098 |
0.333 |
|
| 2017 |
Paskov PP, Slomski M, Leach JH, Muth JF, Paskova T. Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment Aip Advances. 7: 095302. DOI: 10.1063/1.4989626 |
0.308 |
|
| 2015 |
Sharma Y, Tiruveedhula VA, Muth JF, Dhawan A. VO(2) based waveguide-mode plasmonic nano-gratings for optical switching. Optics Express. 23: 5822-49. PMID 25836811 DOI: 10.1364/Oe.23.005822 |
0.582 |
|
| 2014 |
Dhawan A, Sharma Y, Brickson L, Muth JF. Incorporation of vanadium oxide films in optical fibers for temperature sensing and optical switching applications Optical Materials Express. 4: 1128-1139. DOI: 10.1364/Ome.4.001128 |
0.587 |
|
| 2014 |
Ishmael SA, Slomski M, Luo H, White M, Hunt A, Mandzy N, Muth JF, Nesbit R, Paskova T, Straka W, Schwartz J. Thermal conductivity and dielectric properties of a TiO2-based electrical insulator for use with high temperature superconductor-based magnets Superconductor Science and Technology. 27. DOI: 10.1088/0953-2048/27/9/095018 |
0.532 |
|
| 2013 |
Wang Y, Muth JF. Expanded thermochromic color changes in VO2 thin film devices using structured plasmonic metal layers Materials Research Society Symposium Proceedings. 1494: 171-177. DOI: 10.1557/Opl.2013.158 |
0.359 |
|
| 2013 |
Wang Y, Muth JF. Improved switching response of VO2 devices deposited on silicon nitride membranes Materials Research Society Symposium Proceedings. 1494: 321-326. DOI: 10.1557/Opl.2013.118 |
0.377 |
|
| 2013 |
Ishmael S, Luo H, White M, Hunte F, Liu XT, Mandzy N, Muth JF, Naderi G, Ye L, Hunt AT, Schwartz J. Enhanced quench propagation in Bi2Sr2CaCu2 Ox and YBa2Cu3O7-x coils via a nanoscale doped-titania-based thermally conducting electrical insulator Ieee Transactions On Applied Superconductivity. 23. DOI: 10.1109/Tasc.2013.2269535 |
0.532 |
|
| 2013 |
Cochenour B, Mullen L, Muth J. Temporal Response of the Underwater Optical Channel for High-Bandwidth Wireless Laser Communications Ieee Journal of Oceanic Engineering. 38: 730-742. DOI: 10.1109/Joe.2013.2255811 |
0.701 |
|
| 2012 |
Cochenour B, Mullen L, Muth J. A modulated pulse laser for underwater detection, ranging, imaging, and communications Proceedings of Spie. 8372. DOI: 10.1117/12.918711 |
0.699 |
|
| 2012 |
Luo H, Wellenius P, Lunardi L, Muth JF. Transparent IGZO-based logic gates Ieee Electron Device Letters. 33: 673-675. DOI: 10.1109/Led.2012.2186784 |
0.568 |
|
| 2012 |
Simpson JA, Hughes BL, Muth JF. Smart transmitters and receivers forunderwater free-space optical communication Ieee Journal On Selected Areas in Communications. 30: 964-974. DOI: 10.1109/Jsac.2012.120611 |
0.524 |
|
| 2011 |
Cochenour B, Mullen L, Muth J. Modulated pulse laser with pseudorandom coding capabilities for underwater ranging, detection, and imaging Applied Optics. 50: 6168-6178. PMID 22108874 DOI: 10.1364/Ao.50.006168 |
0.703 |
|
| 2010 |
Cochenour B, Mullen L, Muth J. Effect of scattering albedo on attenuation and polarization of light underwater. Optics Letters. 35: 2088-2090. PMID 20548395 DOI: 10.1364/Ol.35.002088 |
0.683 |
|
| 2010 |
Lou Y, Muth JF. Optically Controlled Optical Modulator using a Self-Assembled 2D
Plasmonic Crystal Mrs Proceedings. 1248. DOI: 10.1557/Proc-1248-D11-22 |
0.605 |
|
| 2010 |
Oh C, Kim J, Muth J, Serati S, Escuti MJ. High-throughput continuous beam steering using rotating polarization gratings Ieee Photonics Technology Letters. 22: 200-202. DOI: 10.1109/Lpt.2009.2037155 |
0.305 |
|
| 2010 |
Suresh A, Wellenius P, Baliga V, Luo H, Lunardi LM, Muth JF. Fast all-transparent integrated circuits based on indium gallium zinc oxide thin-film transistors Ieee Electron Device Letters. 31: 317-319. DOI: 10.1109/Led.2010.2041525 |
0.595 |
|
| 2010 |
Lou Y, Lunardi LM, Muth JF. Fabrication of nanoshell arrays using directed assembly of nanospheres Ieee Sensors Journal. 10: 617-620. DOI: 10.1109/Jsen.2009.2038586 |
0.612 |
|
| 2010 |
Wellenius P, Smith ER, Leboeuf SM, Everitt HO, Muth JF. Optimal composition of europium gallium oxide thin films for device applications Journal of Applied Physics. 107. DOI: 10.1063/1.3319670 |
0.417 |
|
| 2010 |
Smith ER, Gruber JB, Wellenius P, Muth JF, Everitt HO. Spectra and energy levels of Eu3+ in cubic phase Gd2O3 Physica Status Solidi (B) Basic Research. 247: 1807-1813. DOI: 10.1002/Pssb.200945602 |
0.371 |
|
| 2010 |
Wellenius P, Smith ER, Wu PC, Everitt HO, Muth JF. Effect of oxygen pressure on the structure and luminescence of Eu-doped Gd 2O 3 thin films Physica Status Solidi (a) Applications and Materials Science. 207: 1949-1953. DOI: 10.1002/Pssa.201026071 |
0.395 |
|
| 2009 |
Westcott NP, Lou Y, Muth JF, Yousaf MN. Patterned hybrid nanohole array surfaces for cell adhesion and migration Langmuir. 25: 11236-11238. PMID 19722551 DOI: 10.1021/La9023234 |
0.537 |
|
| 2009 |
Mullen L, Cochenour B, Rabinovich W, Mahon R, Muth J. Backscatter suppression for underwater modulating retroreflector links using polarization discrimination. Applied Optics. 48: 328-37. PMID 19137044 DOI: 10.1364/Ao.48.000328 |
0.701 |
|
| 2009 |
Chintapatla S, Muth JF, Lunardi LM. Controlling the wrinkling of the bilayer thin films electrothermally Materials Research Society Symposium Proceedings. 1139: 97-102. DOI: 10.1557/Proc-1139-Gg03-20 |
0.376 |
|
| 2009 |
Wellenius P, Suresh A, Muth JF. An amorphous IGZO rare earth doped luminescent phosphor Materials Research Society Symposium Proceedings. 1111: 187-192. DOI: 10.1557/Proc-1111-D08-03 |
0.663 |
|
| 2009 |
Phillips DJ, Smith ER, Luo H, Wellinius P, Muth JF, Everitt HO, Foreman JV. The potential of wide band-gap semiconductor materials in laser induced semiconductor switches Proceedings of Spie - the International Society For Optical Engineering. 7311. DOI: 10.1117/12.818741 |
0.569 |
|
| 2009 |
Wellenius P, Suresh A, Luo H, Lunardi LM, Muth JF. An amorphous indium-gallium-zinc-oxide active matrix electroluminescent pixel Ieee/Osa Journal of Display Technology. 5: 438-445. DOI: 10.1109/Jdt.2009.2024012 |
0.703 |
|
| 2009 |
Suresh A, Novak S, Wellenius P, Misra V, Muth JF. Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric Applied Physics Letters. 94. DOI: 10.1063/1.3106629 |
0.576 |
|
| 2009 |
Wellenius P, LeBoeuf S, Kolbas RM, Aumer M, Tucker J, Muth JF. Optical properties of high mole-fraction europium doped beta gallium oxide Materials Research Society Symposium Proceedings. 1111: 229-234. |
0.32 |
|
| 2008 |
Dhawan A, Muth JF, Leonard DN, Gerhold MD, Gleeson J, Vo-Dinh T, Russell PE. FIB Fabrication of Metallic Nanostructures on End-Faces of Optical Fibers for Chemical Sensing Applications. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures : Processing, Measurement, and Phenomena : An Official Journal of the American Vacuum Society. 26: 2168-2173. PMID 23976838 DOI: 10.1116/1.3013329 |
0.577 |
|
| 2008 |
Lou Y, Westcott N, McGlade J, Muth JF, Yousaf M. Surface plasmon enhanced transmission with self-assembled hexagonal nanohole arrays Materials Research Society Symposium Proceedings. 1133: 13-18. DOI: 10.1557/Proc-1133-Aa04-05 |
0.614 |
|
| 2008 |
Dhawan A, Gerhold MD, Muth JF. In-line optical fiber structures for environmental sensing International Journal of High Speed Electronics and Systems. 18: 167-177. DOI: 10.1142/S0129156408005242 |
0.559 |
|
| 2008 |
Cox WC, Simpson JA, Domizioli CP, Muth JF, Hughes BL. An underwater optical communication system implementing reed-solomon channel coding Oceans 2008. DOI: 10.1109/OCEANS.2008.5151992 |
0.446 |
|
| 2008 |
Dhawan A, Gerhold MD, Muth JF. Plasmonic structures based on sub wavelength apertures for chemical and biological sensing applications Ieee Sensors Journal. 8: 942-950. DOI: 10.1109/Jsen.2008.923933 |
0.589 |
|
| 2008 |
Sarkar S, Suresh A, Myers FB, Muth JF, Misra V. Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2918981 |
0.585 |
|
| 2008 |
Wellenius P, Suresh A, Muth JF. Bright, low voltage europium doped gallium oxide thin film electroluminescent devices Applied Physics Letters. 92. DOI: 10.1063/1.2824846 |
0.627 |
|
| 2008 |
Suresh A, Muth JF. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors Applied Physics Letters. 92. DOI: 10.1063/1.2824758 |
0.599 |
|
| 2008 |
Suresh A, Gollakota P, Wellenius P, Dhawan A, Muth JF. Transparent, high mobility InGaZnO thin films deposited by PLD Thin Solid Films. 516: 1326-1329. DOI: 10.1016/J.Tsf.2007.03.153 |
0.718 |
|
| 2008 |
Dhawan A, Muth JF. Engineering surface plasmon based fiber-optic sensors Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 149: 237-241. DOI: 10.1016/J.Mseb.2007.09.076 |
0.554 |
|
| 2008 |
Wellenius P, Suresh A, Foreman JV, Everitt HO, Muth JF. A visible transparent electroluminescent europium doped gallium oxide device Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 146: 252-255. DOI: 10.1016/J.Mseb.2007.07.060 |
0.628 |
|
| 2008 |
Collazo R, Mita S, Rice A, Dalmau R, Wellenius P, Muth J, Sitar Z. Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1977-1979. DOI: 10.1002/Pssc.200778624 |
0.311 |
|
| 2007 |
Mahros AM, Luen MO, Emara A, Berkman EA, Arkun FE, Zhang X, Muth J, El-Masry NA, Bedair SM. Correlations Between Optical Transmission and Magnetic Properties of Doped and Undoped GaMnN Mrs Proceedings. 999. DOI: 10.1557/Proc-0999-K06-06 |
0.315 |
|
| 2007 |
Gerhold MD, Dhawan A, Muth JF. Plasmon resonance based in-line fiber optic sensing Proceedings of Spie - the International Society For Optical Engineering. 6479. DOI: 10.1117/12.693028 |
0.473 |
|
| 2007 |
Suresh A, Wellenius P, Muth JF. High mobility Indium Gallium Zinc Oxide for transparent conductive contacts and thin film transistors Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 135-136. DOI: 10.1109/LEOS.2007.4382313 |
0.633 |
|
| 2007 |
Wellenius P, Suresh A, Muth JF. Characterization of a novel Europium doped gallium oxide electroluminescent device Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 106-107. DOI: 10.1109/LEOS.2007.4382298 |
0.595 |
|
| 2007 |
Suresh A, Wellenius P, Muth JF. High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material Technical Digest - International Electron Devices Meeting, Iedm. 587-590. DOI: 10.1109/IEDM.2007.4419007 |
0.569 |
|
| 2007 |
Zhang XY, Dhawan A, Wellenius P, Suresh A, Muth JF. Planar ZnO ultraviolet modulator Applied Physics Letters. 91. DOI: 10.1063/1.2770995 |
0.7 |
|
| 2007 |
Suresh A, Wellenius P, Dhawan A, Muth J. Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors Applied Physics Letters. 90: 123512. DOI: 10.1063/1.2716355 |
0.71 |
|
| 2007 |
Voitenko I, Muth JF, Gerhold M, Cui D, Xu J. Tunable photoluminescence of polymer doped with PbSe quantum dots Materials Science and Engineering C. 27: 1078-1081. DOI: 10.1016/J.Msec.2006.09.018 |
0.31 |
|
| 2006 |
Dhawan A, Muth JF. Plasmon resonances of gold nanoparticles incorporated inside an optical fibre matrix. Nanotechnology. 17: 2504-11. PMID 21727496 DOI: 10.1088/0957-4484/17/10/011 |
0.536 |
|
| 2006 |
Dhawan A, Muth JF. In-line fiber optic structures for environmental sensing applications. Optics Letters. 31: 1391-3. PMID 16642115 DOI: 10.1364/Ol.31.001391 |
0.52 |
|
| 2006 |
Arkun FE, El-Masry NA, Muth J, Zhang X, Mahrouse A, Zavada J, Bedair SM. Optical Transmission Measurements on MOCVD Grown GaMnN Films on Sapphire Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I07-02 |
0.341 |
|
| 2006 |
Kekas J, Dhawan A, Gollakota P, Muth J. Annealing and Persistent Photoconductivity Effects in Amorphous and Crystalline Vanadium Oxide Films Mrs Proceedings. 928. DOI: 10.1557/Proc-0928-Gg15-05 |
0.616 |
|
| 2006 |
Dhawan A, Muth JF, Kekas DJ, Ghosh TK. Optical nano-textile sensors based on the incorporation of semiconducting and metallic nanopartieles into optical fibers Materials Research Society Symposium Proceedings. 920: 121-126. DOI: 10.1557/Proc-0920-S05-06 |
0.55 |
|
| 2006 |
Mion C, Muth JF, Preble EA, Hanser D. Temperature and dislocation density effects on the thermal conductivity of bulk gallium nitride Materials Research Society Symposium Proceedings. 892: 749-754. DOI: 10.1557/Proc-0892-Ff29-05 |
0.567 |
|
| 2006 |
Cai AL, Wellenius IP, Gerhold M, Muth JF, Osinsky A, Xie JQ, Dong JW. Refractive indices of A-plane GaN thin films on R-plane sapphire Materials Research Society Symposium Proceedings. 892: 581-586. DOI: 10.1557/Proc-0892-Ff23-10 |
0.781 |
|
| 2006 |
Park JS, Fothergill DW, Wellenius P, Bishop SM, Muth JF, Davis RF. Origins of parasitic emissions from 353 nm AlGaN-based UV LEDs over SiC substrates Materials Research Society Symposium Proceedings. 892: 175-180. DOI: 10.1557/Proc-0892-Ff09-02 |
0.322 |
|
| 2006 |
Wellenius IP, Dhawan A, Muth JF, Guardala NA, Price JL. Improved photoconductivity of ZnO by ion beam bombardment Materials Research Society Symposium Proceedings. 891: 473-478. DOI: 10.1557/Proc-0891-Ee10-15 |
0.765 |
|
| 2006 |
Ghosh TK, Dhawan A, Muth JF. Formation of electrical circuits in textile structures Intelligent Textiles and Clothing. 239-282. DOI: 10.1533/9781845691622.3.239 |
0.432 |
|
| 2006 |
Park JS, Fothergill DW, Wellenius P, Bishop SM, Muth JF, Davis RF. Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 4083-4086. DOI: 10.1143/Jjap.45.4083 |
0.327 |
|
| 2006 |
Porter HL, Muth JF, Narayan J, Foreman JV, Everitt HO. Photoluminescence study of ZnO films codoped with nitrogen and tellurium Journal of Applied Physics. 100. DOI: 10.1063/1.2372312 |
0.741 |
|
| 2006 |
Mion C, Muth JF, Preble EA, Hanser D. Accurate dependence of gallium nitride thermal conductivity on dislocation density Applied Physics Letters. 89. DOI: 10.1063/1.2335972 |
0.531 |
|
| 2006 |
Gollakota P, Dhawan A, Wellenius P, Lunardi LM, Muth JF, Saripalli YN, Peng HY, Everitt HO. Optical characterization of Eu-doped Β-Ga 2O 3 thin films Applied Physics Letters. 88. DOI: 10.1063/1.2208368 |
0.609 |
|
| 2006 |
Mion C, Muth JF, Preble EA, Hanser D. Thermal conductivity, dislocation density and GaN device design Superlattices and Microstructures. 40: 338-342. DOI: 10.1016/J.Spmi.2006.07.017 |
0.549 |
|
| 2006 |
Park JS, Reitmeier ZJ, Fothergill D, Zhang X, Muth JF, Davis RF. Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0 0 0 1) substrates and the effect of carrier-blocking layers on their emission characteristics Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 127: 169-179. DOI: 10.1016/J.Mseb.2005.10.019 |
0.376 |
|
| 2006 |
Zhang X, Wellenius IP, Cai AL, Muth JF, Roberts J, Rajagopal P, Cook J, Finer E, Linthicum K. Surface recombination and vacuum/GaN/AlGaN surface quantum wells Materials Research Society Symposium Proceedings. 892: 563-568. |
0.761 |
|
| 2005 |
Dhawan A, Muth JF. Integration of nanoparticles into and onto optical fiber sensors Materials Research Society Symposium Proceedings. 900: 403-408. DOI: 10.1557/Proc-0900-O11-09 |
0.563 |
|
| 2005 |
Zhang X, Wellenius IP, Cai A, Muth J, Roberts J, Rajagopal P, Cook J, Piner E, Linthicum K. Surface Recombination and Vacuum/GaN/AlGaN Surface Quantum Wells Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff23-06 |
0.752 |
|
| 2005 |
Park JS, Fothergill DW, Zhang X, Reitmeier ZJ, Muth JF, Davis RF. Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 7254-7259. DOI: 10.1143/Jjap.44.7254 |
0.354 |
|
| 2005 |
Muth JF, Zhang X, Cai A, Fothergill D, Roberts JC, Rajagopal P, Cook JW, Piner EL, Linthicum KJ. Gallium nitride surface quantum wells Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2123396 |
0.584 |
|
| 2005 |
Porter HL, Cai AL, Muth JF, Narayan J. Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1923194 |
0.745 |
|
| 2005 |
Cook BP, Everitt HO, Avrutsky I, Osinsky A, Cai A, Muth JF. Refractive indices of ZnSiN 2 on r-plane sapphire Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1865325 |
0.592 |
|
| 2005 |
Porter HL, Mion C, Cai AL, Zhang X, Muth JF. Growth of ZnO films on C-plane (0 0 0 1) sapphire by pulsed electron deposition (PED) Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 119: 210-212. DOI: 10.1016/J.Mseb.2005.02.042 |
0.739 |
|
| 2005 |
Muth JF, Gollakota P, Dhawan A, Porter HL, Saripalli YN, Lunardi LM. Gallium Oxide as a host for rare earth elements Materials Research Society Symposium Proceedings. 866: 177-182. |
0.771 |
|
| 2004 |
Muth J, Cai A, Osinsky A, Everitt H, Cook B, Avrutsky I. Optical Properties of II-IV-N2 Semiconductors Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E11.45 |
0.623 |
|
| 2004 |
Dhawan A, Ghosh TK, Seyam A, Muth JF. Woven fabric-based electrical circuits. Part II: Yarn and fabric structures to reduce crosstalk noise in woven fabric-based circuits Textile Research Journal. 74: 955-960. DOI: 10.1177/004051750407401103 |
0.519 |
|
| 2004 |
Dhawan A, Ghosh TK, Seyam AM, Muth JF. Woven Fabric-Based Electrical Circuits Textile Research Journal. 74: 955-960. DOI: 10.1177/004051750407401103 |
0.454 |
|
| 2004 |
Dhawan A, Seyam AM, Ghosh TK, Muth JF. Woven fabric-based electrical circuits part I: Evaluating interconnect methods Textile Research Journal. 74: 913-919. DOI: 10.1177/004051750407401011 |
0.526 |
|
| 2004 |
Dhawan A, Seyam AM, Ghosh TK, Muth JF. Woven Fabric-Based Electrical Circuits Textile Research Journal. 74: 913-919. DOI: 10.1177/004051750407401011 |
0.454 |
|
| 2004 |
Grant E, Luthy KA, Muth JF, Mattos LS, Braly JC, Seyam A, Ghosh T, Dhawan A, Natarajan K. Developing portable acoustic arrays on a large-scale e-textile substrate International Journal of Clothing Science and Technology. 16: 73-83. DOI: 10.1108/09556220410520379 |
0.504 |
|
| 2003 |
Mion C, Chang YC, Muth JF, Rajagopal P, Brown JD. Thermal conductivity of GaN grown on silicon substrates Materials Research Society Symposium - Proceedings. 798: 381-386. DOI: 10.1557/Proc-798-Y10.35 |
0.561 |
|
| 2003 |
Chang YC, Cai AL, Muth JF, Kolbas RM, Park M, Cuomo JJ, Hanser A, Bumgarner J. Optical and structural studies of hydride vapor phase epitaxy grown GaN Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 701-705. DOI: 10.1116/1.1568346 |
0.422 |
|
| 2003 |
Oberhofer AE, Muth JF, Johnson MAL, Chen ZY, Fleet EF, Cooper GD. Planar gallium nitride ultraviolet optical modulator Applied Physics Letters. 83: 2748-2750. DOI: 10.1063/1.1615675 |
0.759 |
|
| 2003 |
Cai AL, Muth JF, Porter HL, Kvit A, Narayan J. The Refractive Index and Other Properties of Doped ZnO films Materials Research Society Symposium - Proceedings. 764: 153-158. |
0.729 |
|
| 2002 |
Porter HL, Jin C, Narayan J, Cai AL, Muth JF, Holland OW. Structural, optical and electrical properties of the novel semiconductor alloy ZnOxTe(1-x) Materials Research Society Symposium - Proceedings. 744: 175-180. DOI: 10.1557/Proc-744-M5.5 |
0.737 |
|
| 2002 |
Cai AL, Muth JF, Reed MJ, Porter HL, Jin C, Narayan J. Effect of growth temperature and annealing on ZnO Materials Research Society Symposium - Proceedings. 744: 207-212. DOI: 10.1557/Proc-744-M5.13 |
0.727 |
|
| 2002 |
Park M, Carlson E, Chang YC, Muth JF, Bumgarner J, Kolbas RM, Cuomo JJ, Nemanich RJ. Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy Materials Research Society Symposium - Proceedings. 743: 323-328. DOI: 10.1557/Proc-743-L4.12 |
0.381 |
|
| 2002 |
Luthy KA, Mattos LS, Braly JC, Grant E, Muth JF, Dhawan A, Natarajan K, Ghosh T, Seyam A. Initial development of a portable acoustic array on a large-scale e-textile substrate Materials Research Society Symposium - Proceedings. 736: 139-144. DOI: 10.1557/Proc-736-D3.7 |
0.515 |
|
| 2002 |
Natarajan K, Dhawan A, Seyam AM, Ghosh TK, Muth JF. Electrotextiles - Present and future Materials Research Society Symposium - Proceedings. 736: 85-90. DOI: 10.1557/Proc-736-D3.10 |
0.484 |
|
| 2002 |
Dhawan A, Ghosh TK, Seyam AM, Muth J. Development of Woven Fabric-based Electrical Circuits Mrs Proceedings. 736. DOI: 10.1557/Proc-736-D1.9 |
0.521 |
|
| 2002 |
Muth JF, Grant E, Luthy KA, Mattos LS, Braly JC, Dhawan A, Seyam AM, Ghosh TK. Signal propagation and multiplexing challenges in electronic textiles Materials Research Society Symposium - Proceedings. 736: 13-23. DOI: 10.1557/Proc-736-D1.2 |
0.525 |
|
| 2002 |
Park M, Maria JP, Cuomo JJ, Chang YC, Muth JF, Kolbas RM, Nemanich RJ, Carlson E, Bumgarner J. X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy Applied Physics Letters. 81: 1797-1799. DOI: 10.1063/1.1506781 |
0.38 |
|
| 2002 |
Chang YC, Cai AL, Johnson MAL, Muth JF, Kolbas RM, Reitmeier ZJ, Einfeldt S, Davis RF. Electron-beam-induced optical memory effects in GaN Applied Physics Letters. 80: 2675-2677. DOI: 10.1063/1.1469222 |
0.333 |
|
| 2002 |
Tiwari A, Jin C, Kvit A, Kumar D, Muth JF, Narayan J. Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films Solid State Communications. 121: 371-374. DOI: 10.1016/S0038-1098(01)00464-1 |
0.402 |
|
| 2002 |
Roberts JC, Parker CA, Muth JF, Leboeuf SF, Aumer ME, Bedair SM, Reed MJ. Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from in xGa 1-xN (0 ≤ x ≤ 0.13) Journal of Electronic Materials. 31: L1-L6. DOI: 10.1007/S11664-002-0179-3 |
0.33 |
|
| 2001 |
Jin C, Tiwari A, Kvit A, Kumar D, Muth J, Narayan J. Pulsed Laser Deposition and Characterization of Zn1−xMnxO Films Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H11.5.1 |
0.42 |
|
| 2001 |
Duewer B, Winick D, Oberhofer AE, Muth J, Franzon PD. Improving interconnect characteristics of thin film MEMS processes Proceedings of Spie - the International Society For Optical Engineering. 4592: 196-204. DOI: 10.1117/12.448966 |
0.77 |
|
| 2001 |
Chang YC, Oberhofer AE, Muth JF, Kolbas RM, Davis RF. Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN Applied Physics Letters. 79: 281-283. DOI: 10.1063/1.1381417 |
0.776 |
|
| 2001 |
Teng CW, Aboelfotoh MO, Davis RF, Muth JF, Kolbas RM. Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers Applied Physics Letters. 78: 1688-1690. DOI: 10.1063/1.1353836 |
0.339 |
|
| 2001 |
Narayan J, Sharma AK, Kvit A, Jin C, Muth JF, Holland OW. Novel cubic ZnxMg1-xO epitaxial heterostructures on Si (100) substrates Solid State Communications. 121: 9-13. DOI: 10.1016/S0038-1098(01)00431-8 |
0.425 |
|
| 2000 |
Kvit A, Dusher G, Sharma AK, Jin C, Narayan J, Muth J, Teng C. Phase Separation in Multiple ZnO /Cubic- MgxZn1−xO Superlattice Heterostructures Observed Via High Resolution Transmission Electron Microscopy Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G6.50 |
0.346 |
|
| 2000 |
Muth JF, Teng CW, Sharma AK, Kvit A, Kolbas RM, Narayan J. Growth of ZnO/MgZnO superlattice on sapphire Materials Research Society Symposium - Proceedings. 623: 353-358. DOI: 10.1557/Proc-617-J6.7 |
0.37 |
|
| 2000 |
Sharma AK, Muth JF, Kvit A, Narayan J, Kolbas RM. Optical and structural characteristics of Gold nanocrystallites embedded in a dielectric matrix Materials Research Society Symposium - Proceedings. 617. DOI: 10.1557/Proc-617-J2.7 |
0.403 |
|
| 2000 |
Narayan J, Sharma AK, Kvit A, Kumar D, Muth JF. Novel nanocrystalline materials by pulsed laser deposition Materials Research Society Symposium - Proceedings. 617. DOI: 10.1557/Proc-617-J2.4 |
0.383 |
|
| 2000 |
Sharma AK, Jin C, Kvit A, Narayan J, Muth JF, Teng CW, Kolbas RM, Holland OW. Structural and optical property investigations on mg-alloying in epitaxial zinc oxide films on sapphire Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/Proc-595-F99W3.87 |
0.448 |
|
| 2000 |
Teng CW, Muth JF, Kolbas RM, Hassan KM, Sharma AK, Kvit A, Narayan J. Quantum confinement of above-band-gap transitions in Ge quantum dots Materials Research Society Symposium - Proceedings. 588: 263-275. DOI: 10.1557/Proc-588-263 |
0.355 |
|
| 2000 |
Hassan KM, Sharma AK, Narayan J, Muth JF, Teng CW, Kolbas RM. Size effect in germanium nanostructures fabricated by pulsed laser deposition Materials Research Society Symposium - Proceedings. 581: 163-167. DOI: 10.1557/Proc-581-163 |
0.381 |
|
| 2000 |
Teng CW, Muth JF, Özgür U, Bergmann MJ, Everitt HO, Sharma AK, Jin C, Narayan J. Refractive indices and absorption coefficients of MgxZn1-xO alloys Applied Physics Letters. 76: 979-981. DOI: 10.1063/1.125912 |
0.387 |
|
| 2000 |
Teng CW, Muth JF, Kolbas RM, Hassan KM, Sharma AK, Kvit A, Narayan J. Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in an Al2O3 or an AIN matrix Applied Physics Letters. 76: 43-45. DOI: 10.1063/1.125650 |
0.354 |
|
| 2000 |
Balkaş CM, Sitar Z, Bergman L, Shmagin IK, Muth JF, Kolbas R, Nemanich RJ, Davis RF. Growth and characterization of GaN single crystals Journal of Crystal Growth. 208: 100-106. DOI: 10.1016/S0022-0248(99)00445-5 |
0.339 |
|
| 1999 |
Muth JF, Brown JD, Johnson MAL, Zhonghai YU, Kolbas RM, Cook JW, Schetzina JF. Absorption coefficient and refractive index of GaN, AIN and AlGaN alloys Materials Research Society Symposium - Proceedings. 537: G5.2. DOI: 10.1557/S1092578300002957 |
0.368 |
|
| 1999 |
Yu Z, Johnson MAL, Brown JD, El-Masry NA, Muth JF, Cook JW, Schetzina JF, Haberern KW, Kong HS, Edmond JA. Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates Mrs Internet Journal of Nitride Semiconductor Research. 4. DOI: 10.1557/S1092578300002878 |
0.375 |
|
| 1999 |
Hassan KM, Sharma AK, Narayan J, Muth JF, Teng CW. Germanium nanostructures fabricated by PLD Materials Research Society Symposium - Proceedings. 536: 329-333. DOI: 10.1557/Proc-536-329 |
0.391 |
|
| 1999 |
Joshkin VA, Parker CA, Bedair SM, Muth JF, Shmagin IK, Kolbas RM, Piner EL, Molnar RJ. Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy Journal of Applied Physics. 86: 281-288. DOI: 10.1063/1.370727 |
0.388 |
|
| 1999 |
Muth JF, Kolbas RM, Sharma AK, Oktyabrsky S, Narayan J. Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition Journal of Applied Physics. 85: 7884-7887. DOI: 10.1063/1.370601 |
0.451 |
|
| 1999 |
Sharma AK, Narayan J, Muth JF, Teng CW, Jin C, Kvit A, Kolbas RM, Holland OW. Optical and structural properties of epitaxial MgxZn1-xO alloys Applied Physics Letters. 75: 3327-3329. DOI: 10.1063/1.125340 |
0.451 |
|
| 1999 |
Hassan KM, Sharma AK, Narayan J, Muth JF, Teng CW, Kolbas RM. Optical and structural studies of Ge nanocrystals embedded in AIN matrix fabricated by pulsed laser deposition Applied Physics Letters. 75: 1222-1224. DOI: 10.1063/1.124648 |
0.393 |
|
| 1998 |
Moxey DE, Sharma A, Narayan J, Lee CB, Oktyabrsky S, Muth J. Analysis of Undoped and Ag-doped High-Tc YBCO Superconducting Bolometers Fabricated Using a Novel Anti-Reflective Coating and Photolithographic Technique Mrs Proceedings. 541. DOI: 10.1557/Proc-541-667 |
0.369 |
|
| 1998 |
Wei Q, Sharma A, Narayan R, Ravindra N, Oktyabrsky S, Sankar J, Muth J, Kolbas R, Narayan J. Microstructure and IR Range Optical Properties of Pure DLC and DLC Containing Dopants Prepared by Pulsed Laser Deposition Mrs Proceedings. 526. DOI: 10.1557/Proc-526-331 |
0.45 |
|
| 1998 |
Sharma AK, Dovidenko K, Oktyabrsky S, Moxey DE, Muth JF, Kolbas RM, Narayan J. Growth of high quality single crystal ZnO films on sapphire by pulsed laser ablation Materials Research Society Symposium - Proceedings. 526: 305-310. DOI: 10.1557/Proc-526-305 |
0.422 |
|
| 1998 |
Moxey DE, Kalyanaraman R, Sharma A, Narayan J, Lee CB, Muth J. Pulsed Laser Deposition of Undoped and Ag-Doped Stacked Structures of YBaCuO for Bolometer Device Applications Mrs Proceedings. 526. DOI: 10.1557/Proc-526-269 |
0.411 |
|
| 1998 |
Osinsky A, Gangopadhyay S, Yang JW, Gaska R, Kuksenkov D, Temkin H, Shmagin IK, Chang YC, Muth JF, Kolbas RM. Visible-blind GaN Schottky barrier detectors grown on Si(111) Applied Physics Letters. 72: 551-553. DOI: 10.1063/1.120755 |
0.337 |
|
| 1998 |
Wei Q, Sharma AK, Narayan RJ, Ravindra NM, Oktyabrsky S, Sankar J, Muth JF, Kolbas RM, Narayan J. Microstructure and IR range optical properties of pure DLC and DLC containing dopants prepared by pulsed laser deposition Materials Research Society Symposium - Proceedings. 526: 331-336. |
0.342 |
|
| 1997 |
Balkas CM, Sitar Z, Zheleva T, Bergman L, Muth JF, Shmagin IK, Kolbas R, Nemanich R, Davis RF. Growth of bulk AlN and GaN single crystals by sublimation Materials Research Society Symposium - Proceedings. 449: 41-46. DOI: 10.1557/Proc-449-41 |
0.332 |
|
| 1997 |
Shmagin IK, Muth JF, Krishnankutty S, Kolbas RM, Keller S, Mishra UK, Denbaars SP. Stimulated emission and GaIn measurements from InGaN/GaN heterostructures Materials Research Society Symposium - Proceedings. 449: 1209-1214. DOI: 10.1557/Proc-449-1209 |
0.379 |
|
| 1997 |
Shmagin IK, Muth JF, Kolbas RM, Krishnankutty S, Keller S, Mishra UK, DenBaars SP. Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration Journal of Applied Physics. 81: 2021-2023. DOI: 10.1063/1.364058 |
0.361 |
|
| 1997 |
Shmagin IK, Muth JF, Kolbas RM, Mack MP, Abare AC, Keller S, Coldren LA, Mishra UK, DenBaars SP. Reconfigurable optical properties in InGaN/GaN quantum wells Applied Physics Letters. 71: 1455-1457. DOI: 10.1063/1.119935 |
0.362 |
|
| 1997 |
Shmagin IK, Muth JF, Kolbas RM, Dupuis RD, Grudowski PA, Eiting CJ, Park J, Shelton BS, Lambert DJH. Optical data storage in InGaN/GaN heterostructures Applied Physics Letters. 71: 1382-1384. DOI: 10.1063/1.119900 |
0.361 |
|
| 1997 |
Shmagin IK, Muth JF, Lee JH, Kolbas RM, Balkas CM, Sitar Z, Davis RF. Optical metastability in bulk GaN single crystals Applied Physics Letters. 71: 455-457. DOI: 10.1063/1.119577 |
0.352 |
|
| 1997 |
Shmagin IK, Muth JF, Kolbas RM, Krishnankutty S, Keller S, Abare AC, Coldren LA, Mishra UK, Baars SPD. Photoluminescence characteristics of GaN/lnGaN/GaN quantum wells Journal of Electronic Materials. 26: 325-329. DOI: 10.1007/S11664-997-0172-Y |
0.364 |
|
| 1996 |
Casey HC, Muth J, Krishnankutty S, Zavada JM. Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light‐emitting diodes Applied Physics Letters. 68: 2867-2869. DOI: 10.1063/1.116351 |
0.301 |
|
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