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Guanxiong Liu, Ph.D. - Publications

Affiliations: 
2012 Electrical Engineering University of California, Riverside, Riverside, CA, United States 
Area:
Electronics and Electrical Engineering
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46 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Liu G, Rumyantsev S, Bloodgood MA, Salguero TT, Balandin AA. Low-Frequency Current Fluctuations and Sliding of the Charge Density Waves in Two-Dimensional Materials. Nano Letters. PMID 29767986 DOI: 10.1021/Acs.Nanolett.8B00729  0.561
2018 Geremew A, Bloodgood MA, Aytan E, Woo BWK, Corber SR, Liu G, Bozhilov K, Salguero TT, Rumyantsev S, Rao MP, Balandin AA. Current Carrying Capacity of Quasi-1D ZrTe3Van Der Waals Nanoribbons Ieee Electron Device Letters. 39: 735-738. DOI: 10.1109/Led.2018.2820140  0.58
2017 Liu G, Rumyantsev S, Bloodgood MA, Salguero TT, Shur M, Balandin AA. Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires. Nano Letters. 17: 377-383. PMID 28073263 DOI: 10.1021/Acs.Nanolett.6B04334  0.604
2017 Khitun A, Liu G, Balandin AA. Two-Dimensional Oscillatory Neural Network Based on Room-Temperature Charge-Density-Wave Devices Ieee Transactions On Nanotechnology. 16: 860-867. DOI: 10.1109/Tnano.2017.2716845  0.586
2017 Liu G, Zhang EX, Liang CD, Bloodgood MA, Salguero TT, Fleetwood DM, Balandin AA. Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices Ieee Electron Device Letters. 38: 1724-1727. DOI: 10.1109/Led.2017.2763597  0.529
2017 Balynsky M, Kozhevnikov A, Khivintsev Y, Bhowmick T, Gutierrez D, Chiang H, Dudko G, Filimonov Y, Liu G, Jiang C, Balandin AA, Lake R, Khitun A. Magnonic interferometric switch for multi-valued logic circuits Journal of Applied Physics. 121: 024504. DOI: 10.1063/1.4973115  0.48
2017 Gutierrez D, Chiang H, Bhowmick T, Volodchenkov AD, Ranjbar M, Liu G, Jiang C, Warren C, Khivintsev Y, Filimonov Y, Garay J, Lake R, Balandin AA, Khitun A. Magnonic holographic imaging of magnetic microstructures Journal of Magnetism and Magnetic Materials. 428: 348-356. DOI: 10.1016/J.Jmmm.2016.12.022  0.455
2016 Stolyarov MA, Liu G, Bloodgood MA, Aytan E, Jiang C, Samnakay R, Salguero TT, Nika DL, Rumyantsev SL, Shur MS, Bozhilov KN, Balandin AA. Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications. Nanoscale. PMID 27531559 DOI: 10.1039/C6Nr03469A  0.547
2016 Liu G, Debnath B, Pope TR, Salguero TT, Lake RK, Balandin AA. A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature. Nature Nanotechnology. PMID 27376243 DOI: 10.1038/Nnano.2016.108  0.615
2016 Politano A, Chiarello G, Samnakay R, Liu G, Gürbulak B, Duman S, Balandin AA, Boukhvalov DW. The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices. Nanoscale. PMID 27049751 DOI: 10.1039/C6Nr01262K  0.539
2015 Liu G, Rumyantsev SL, Jiang C, Shur MS, Balandin AA. Selective Gas Sensing with h-BN Capped MoS2 Heterostructure Thin-Film Transistors Ieee Electron Device Letters. 36: 1202-1204. DOI: 10.1109/Led.2015.2481388  0.533
2015 Stolyarov MA, Liu G, Rumyantsev SL, Shur M, Balandin AA. Reduced 1/f noise in high-mobility BN-graphene-BN heterostructure transistors Device Research Conference - Conference Digest, Drc. 2015: 153-154. DOI: 10.1109/DRC.2015.7175601  0.68
2015 Stolyarov MA, Liu G, Rumyantsev SL, Shur M, Balandin AA. Suppression of 1/ f noise in near-ballistic h -BN-graphene- h- BN heterostructure field-effect transistors Applied Physics Letters. 107. DOI: 10.1063/1.4926872  0.724
2013 Rumyantsev S, Liu G, Potyrailo RA, Balandin AA, Shur MS. Selective sensing of individual gases using graphene devices Ieee Sensors Journal. 13: 2818-2822. DOI: 10.1109/Jsen.2013.2251627  0.565
2013 Shur M, Muraviev AV, Rumyantsev SL, Knap W, Liu G, Balandin AA. Plasmonic and bolometric terahertz graphene sensors Ieee Sensors 2013 - Proceedings. DOI: 10.1109/ICSENS.2013.6688554  0.631
2013 Liu G, Rumyantsev SL, Balandin AA, Shur MS. Surface and volume 1/f noise in multi-layer graphene 2013 22nd International Conference On Noise and Fluctuations, Icnf 2013. DOI: 10.1109/ICNF.2013.6578991  0.649
2013 Muraviev AV, Rumyantsev SL, Liu G, Balandin AA, Knap W, Shur MS. Plasmonic and bolometric terahertz detection by graphene field-effect transistor Applied Physics Letters. 103. DOI: 10.1063/1.4826139  0.742
2013 Liu G, Ahsan S, Khitun AG, Lake RK, Balandin AA. Graphene-based non-Boolean logic circuits Journal of Applied Physics. 114: 154310. DOI: 10.1063/1.4824828  0.487
2013 Liu G, Rumyantsev S, Shur MS, Balandin AA. Origin of 1/f noise in graphene multilayers: Surface vs. volume Applied Physics Letters. 102. DOI: 10.1063/1.4794843  0.671
2012 Liu G, Wu Y, Lin YM, Farmer DB, Ott JA, Bruley J, Grill A, Avouris P, Pfeiffer D, Balandin AA, Dimitrakopoulos C. Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography. Acs Nano. 6: 6786-92. PMID 22780305 DOI: 10.1021/Nn301515A  0.722
2012 Yan Z, Liu G, Khan JM, Balandin AA. Graphene quilts for thermal management of high-power GaN transistors. Nature Communications. 3: 827. PMID 22569371 DOI: 10.1038/Ncomms1828  0.795
2012 Rumyantsev S, Liu G, Shur MS, Potyrailo RA, Balandin AA. Selective gas sensing with a single pristine graphene transistor. Nano Letters. 12: 2294-8. PMID 22506589 DOI: 10.1021/Nl3001293  0.738
2012 Yu J, Liu G, Sumant AV, Goyal V, Balandin AA. Graphene-on-diamond devices with increased current-carrying capacity: carbon sp2-on-sp3 technology. Nano Letters. 12: 1603-8. PMID 22329428 DOI: 10.1021/Nl204545Q  0.808
2012 Liu G. Graphene device fabrication and applications in communication systems Journal of Nanoelectronics and Optoelectronics. 7: 329-360. DOI: 10.1166/jno.2012.1363  0.613
2012 Balandin AA, Rumyantsev S, Liu G, Shur MS, Potyrailo RA. Selective gas sensing with a single graphene-on-silicon transistor 2012 Ieee Silicon Nanoelectronics Workshop, Snw 2012. DOI: 10.1109/SNW.2012.6243283  0.653
2012 Rumyantsev S, Liu G, Potyrailo RA, Balandin AA, Shur MS. Selective gas sensing by graphene Proceedings of Ieee Sensors. DOI: 10.1109/ICSENS.2012.6411434  0.642
2012 Liu G, Rumyantsev S, Shur M, Balandin AA. Graphene thickness-graded transistors with reduced electronic noise Applied Physics Letters. 100: 033103. DOI: 10.1063/1.3676277  0.758
2011 Liu G, Rumyantsev S, Stillman W, Shur M, Balandin AA. 1/f Noise in Graphene Field-Effect Transistors: Dependence on the Device Channel Area Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1357  0.736
2011 Teweldebrhan D, Liu G, Balandin AA. Reversible Tuning of the Electronic Properties of Graphene via Controlled Exposure to Electron Beam Irradiation and Annealing Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1354  0.842
2011 Lin J, Teweldebrhan D, Ashraf K, Liu G, Jing X, Yan Z, Ozkan M, Lake RK, Balandin AA, Ozkan CS. DNA Gating effect from single layer graphene Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1353  0.835
2011 Yu J, Liu G, Sumant AV, Balandin AA. Top-Gate Graphene-on-UNCD Transistors with Enhanced Performance Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1350  0.738
2011 Yan Z, Liu G, Khan J, Yu J, Subrina S, Balandin A. Experimental Demonstration of Thermal Management of High-Power GaN Transistors with Graphene Lateral Heat Spreaders Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1348  0.82
2011 LIU G, STILLMAN W, RUMYANTSEV S, SHUR M, BALANDIN AA. LOW-FREQUENCY ELECTRONIC NOISE IN GRAPHENE TRANSISTORS: COMPARISON WITH CARBON NANOTUBES International Journal of High Speed Electronics and Systems. 20: 161-170. DOI: 10.1142/S0129156411006490  0.708
2011 Liu G, Teweldebrhan D, Balandin AA. Tuning of Graphene Properties via Controlled Exposure to Electron Beams Ieee Transactions On Nanotechnology. 10: 865-870. DOI: 10.1109/Tnano.2010.2087391  0.835
2011 Yang X, Liu G, Rostami M, Balandin AA, Mohanram K. Graphene ambipolar multiplier phase detector Ieee Electron Device Letters. 32: 1328-1330. DOI: 10.1109/Led.2011.2162576  0.687
2011 Rumyantsev SL, Liu G, Shur MS, Balandin AA. Observation of the memory steps in graphene at elevated temperatures Applied Physics Letters. 98: 222107. DOI: 10.1063/1.3596441  0.684
2010 Rumyantsev S, Liu G, Stillman W, Shur M, Balandin AA. Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 22: 395302. PMID 21403224 DOI: 10.1088/0953-8984/22/39/395302  0.734
2010 Yang X, Liu G, Balandin AA, Mohanram K. Triple-mode single-transistor graphene amplifier and its applications. Acs Nano. 4: 5532-8. PMID 20939515 DOI: 10.1021/Nn1021583  0.759
2010 Lin J, Teweldebrhan D, Ashraf K, Liu G, Jing X, Yan Z, Li R, Ozkan M, Lake RK, Balandin AA, Ozkan CS. Gating of single-layer graphene with single-stranded deoxyribonucleic acids. Small (Weinheim An Der Bergstrasse, Germany). 6: 1150-5. PMID 20473987 DOI: 10.1002/Smll.200902379  0.837
2010 Shao Q, Subrina S, Nika DL, Liu G, Kotchetkov D. Electric Current and Heat Propagation in Graphene Ribbons Journal of Nanoelectronics and Optoelectronics. 4: 291-295. DOI: 10.1166/Jno.2009.1041  0.816
2010 Amini S, Garay J, Liu G, Balandin AA, Abbaschian R. Growth of large-area graphene films from metal-carbon melts Journal of Applied Physics. 108. DOI: 10.1063/1.3498815  0.721
2009 Lin J, Teweldebrhan D, Ashraf K, Liu G, Jing X, Yan Z, Li R, Lake RK, Ozkan M, Balandin AA, Ozkan CS. Gating of single layer graphene using DNA Proceedings of Spie. 7403. DOI: 10.1117/12.826801  0.817
2009 Shao Q, Liu G, Teweldebrhan D, Balandin AA, Rumyantsev S, Shur MS, Yan D. Flicker Noise in Bilayer Graphene Transistors Ieee Electron Device Letters. 30: 288-290. DOI: 10.1109/Led.2008.2011929  0.812
2009 Calizo I, Bejenari I, Rahman M, Liu G, Balandin AA. Ultraviolet Raman microscopy of single and multilayer graphene Journal of Applied Physics. 106: 043509. DOI: 10.1063/1.3197065  0.815
2009 Liu G, Stillman W, Rumyantsev S, Shao Q, Shur M, Balandin AA. Low-frequency electronic noise in the double-gate single-layer graphene transistors Applied Physics Letters. 95: 033103. DOI: 10.1063/1.3180707  0.739
2008 Shao Q, Liu G, Teweldebrhan D, Balandin AA. High-temperature quenching of electrical resistance in graphene interconnects Applied Physics Letters. 92: 202108. DOI: 10.1063/1.2927371  0.832
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