| Year |
Citation |
Score |
| 2019 |
Sun D, Fu X, Liu Z, Ho S, Wessels B. Low Drive-Voltage and High-Bandwidth Electro-Optic Modulators Based on BaTiO3 Thin-Film Waveguides Ecs Transactions. 3: 125-134. DOI: 10.1149/1.2392926 |
0.313 |
|
| 2019 |
Lin W, Liu Z, Stoumpos CC, Das S, He Y, Hadar I, Peters JA, McCall KM, Xu Y, Chung DY, Wessels BW, Kanatzidis MG. Purification and Improved Nuclear Radiation Detection of Tl6SI4 Semiconductor Crystal Growth & Design. 19: 4738-4744. DOI: 10.1021/Acs.Cgd.9B00620 |
0.313 |
|
| 2018 |
He Y, Matei L, Jung HJ, McCall KM, Chen M, Stoumpos CC, Liu Z, Peters JA, Chung DY, Wessels BW, Wasielewski MR, Dravid VP, Burger A, Kanatzidis MG. High spectral resolution of gamma-rays at room temperature by perovskite CsPbBr single crystals. Nature Communications. 9: 1609. PMID 29686385 DOI: 10.1038/S41467-018-04073-3 |
0.315 |
|
| 2018 |
Lin W, Stoumpos CC, Kontsevoi OY, Liu Z, He Y, Das S, Xu Y, McCall KM, Wessels BW, Kanatzidis MG. Cu2I2Se6: A Metal-Inorganic-Framework Wide-bandgap Semiconductor for Photon Detection at Room Temperature. Journal of the American Chemical Society. PMID 29332382 DOI: 10.1021/Jacs.7B12549 |
0.315 |
|
| 2018 |
He Y, Ke W, Alexander GCB, McCall KM, Chica DG, Liu Z, Hadar I, Stoumpos CC, Wessels BW, Kanatzidis MG. Resolving the Energy of γ-Ray Photons with MAPbI3 Single Crystals Acs Photonics. 5: 4132-4138. DOI: 10.1021/Acsphotonics.8B00873 |
0.303 |
|
| 2018 |
Kontos AG, Kaltzoglou A, Arfanis MK, McCall KM, Stoumpos CC, Wessels BW, Falaras P, Kanatzidis MG. Dynamic Disorder, Band Gap Widening, and Persistent Near-IR Photoluminescence up to At Least 523 K in ASnI3 Perovskites (A = Cs+, CH3NH3+ and NH2–CH═NH2+) The Journal of Physical Chemistry C. 122: 26353-26361. DOI: 10.1021/Acs.Jpcc.8B10218 |
0.333 |
|
| 2017 |
He Y, Kontsevoi OY, Stoumpos CC, Trimarchi G, Islam SM, Liu Z, Kostina SS, Das S, Wessels BW, Kanatzidis MG, Kim JI, Lin W. Defect anti-perovskite compounds Hg3Q2I2 (Q=S, Se and Te) for Room Temperature Hard Radiation Detection. Journal of the American Chemical Society. PMID 28505443 DOI: 10.1021/Jacs.7B03174 |
0.332 |
|
| 2017 |
Das S, Peters JA, Lin W, Kostina SS, Chen P, Kim JI, Kanatzidis MG, Wessels BW. Charge Transport and Observation of Persistent Photoconductivity in Tl6SeI4 Single Crystals. The Journal of Physical Chemistry Letters. PMID 28300409 DOI: 10.1021/Acs.Jpclett.7B00336 |
0.331 |
|
| 2017 |
Girouard P, Chen P, Jeong YK, Liu Z, Ho S, Wessels BW. $\chi ^{(2)}$ Modulator With 40-GHz Modulation Utilizing BaTiO3 Photonic Crystal Waveguides Ieee Journal of Quantum Electronics. 53: 1-10. DOI: 10.1109/Jqe.2017.2718222 |
0.33 |
|
| 2017 |
Xu Y, Fu X, Zheng H, He Y, Lin W, McCall KM, Liu Z, Das S, Wessels BW, Kanatzidis MG. Role of Stoichiometry in the Growth of Large Pb2P2Se6 Crystals for Nuclear Radiation Detection Acs Photonics. 5: 566-573. DOI: 10.1021/Acsphotonics.7B01119 |
0.311 |
|
| 2017 |
Lin W, Chen H, He J, Stoumpos CC, Liu Z, Das S, Kim J, McCall KM, Wessels BW, Kanatzidis MG. TlSbS2: a Semiconductor for Hard Radiation Detection Acs Photonics. 4: 2891-2898. DOI: 10.1021/Acsphotonics.7B00891 |
0.336 |
|
| 2017 |
Lin W, Stoumpos CC, Liu Z, Das S, Kontsevoi OY, He Y, Malliakas CD, Chen H, Wessels BW, Kanatzidis MG. TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature Acs Photonics. 4: 1805-1813. DOI: 10.1021/Acsphotonics.7B00388 |
0.337 |
|
| 2017 |
McCall KM, Stoumpos CC, Kostina SS, Kanatzidis MG, Wessels BW. Strong Electron–Phonon Coupling and Self-Trapped Excitons in the Defect Halide Perovskites A3M2I9 (A = Cs, Rb; M = Bi, Sb) Chemistry of Materials. 29: 4129-4145. DOI: 10.1021/Acs.Chemmater.7B01184 |
0.363 |
|
| 2016 |
Girouard P, Liu Z, Chen P, Jeong YK, Tu Y, Ho ST, Wessels BW. Enhancement of the pockels effect in photonic crystal modulators through slow light. Optics Letters. 41: 5531-5534. PMID 27906231 DOI: 10.1364/Ol.41.005531 |
0.381 |
|
| 2016 |
Kostina SS, Peters JA, Lin W, Chen P, Liu Z, Wang PL, Kanatzidis MG, Wessels BW. Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl6SeI4 single crystals Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/6/065009 |
0.309 |
|
| 2016 |
Kostina SS, Hanson MP, Wang PL, Peters JA, Valverde-Chávez DA, Chen P, Cooke DG, Kanatzidis MG, Wessels BW. Charge Transport Mechanisms in a Pb2P2Se6 Semiconductor Acs Photonics. 3: 1877-1887. DOI: 10.1021/Acsphotonics.6B00396 |
0.311 |
|
| 2016 |
Li H, Meng F, Malliakas CD, Liu Z, Chung DY, Wessels B, Kanatzidis MG. Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection Crystal Growth & Design. 16: 6446-6453. DOI: 10.1021/Acs.Cgd.6B01118 |
0.335 |
|
| 2016 |
Wang PL, Kostina SS, Meng F, Kontsevoi OY, Liu Z, Chen P, Peters JA, Hanson M, He Y, Chung DY, Freeman AJ, Wessels BW, Kanatzidis MG. Refined Synthesis and Crystal Growth of Pb2P2Se6 for Hard Radiation Detectors Crystal Growth and Design. 16: 5100-5109. DOI: 10.1021/Acs.Cgd.6B00684 |
0.323 |
|
| 2016 |
Wibowo AC, Malliakas CD, Li H, Stoumpos CC, Chung DY, Wessels BW, Freeman AJ, Kanatzidis MG. An unusual crystal growth method of the chalcohalide semiconductor, β-Hg3S2Cl2: A new candidate for hard radiation detection Crystal Growth and Design. 16: 2678-2684. DOI: 10.1021/Acs.Cgd.5B01802 |
0.323 |
|
| 2015 |
Liu J, Hanson MP, Peters JA, Wessels BW. Magnetism and Mn Clustering in (In,Mn)Sb Magnetic Semiconductors. Acs Applied Materials & Interfaces. 7: 24159-67. PMID 26447721 DOI: 10.1021/Acsami.5B07471 |
0.445 |
|
| 2015 |
Jeong YK, Wessels BW. Properties of epitaxial barium titanate thin films using a highly volatile Ba(hfa)2triglyme precursor Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4927380 |
0.475 |
|
| 2015 |
Liu J, Peters JA, Rangaraju N, Wessels BW. Charge Transport in Magnetic Semiconductor p-n Heterojunctions Ieee Transactions On Electron Devices. 62: 2470-2474. DOI: 10.1109/Ted.2015.2446956 |
0.762 |
|
| 2015 |
Sebastian M, Peters JA, Stoumpos CC, Im J, Kostina SS, Liu Z, Kanatzidis MG, Freeman AJ, Wessels BW. Excitonic emissions and above-band-gap luminescence in the single-crystal perovskite semiconductors CsPbB r3 and CsPbC l3 Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.235210 |
0.326 |
|
| 2015 |
Meeker MA, Magill BA, Khodaparast GA, Saha D, Stanton CJ, McGill S, Wessels BW. High-field magnetic circular dichroism in ferromagnetic InMnSb and InMnAs: Spin-orbit-split hole bands and g factors Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.125203 |
0.305 |
|
| 2015 |
Lin PT, Russin WA, Joshi-Imre A, Ocola LE, Wessels BW. Investigation of the optical response of photonic crystal nanocavities in ferroelectric oxide thin film Journal of Optics (United Kingdom). 17. DOI: 10.1088/2040-8978/17/10/105402 |
0.582 |
|
| 2015 |
Mauger SJC, Bocquel J, Koenraad PM, Feeser CE, Parashar ND, Wessels BW. Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy Applied Physics Letters. 107. DOI: 10.1063/1.4936754 |
0.777 |
|
| 2014 |
Liu Z, Peters JA, Sebastian M, Kanatzidis MG, Im J, Freeman AJ, Wessels BW. Photo-induced current transient spectroscopy of single crystal Tl6I4Se Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/115002 |
0.301 |
|
| 2014 |
Li H, Malliakas CD, Liu Z, Peters JA, Sebastian M, Zhao L, Chung DY, Wessels BW, Kanatzidis MG. Investigation of semi-insulating Cs2Hg6S7and Cs2Hg6-xCdxS7 alloy for hard radiation detection Crystal Growth and Design. 14: 5949-5956. DOI: 10.1021/Cg501151R |
0.321 |
|
| 2014 |
Liu Z, Peters JA, Li H, Kanatzidis MG, Im J, Jin H, Freeman AJ, Wessels BW. Photo-Induced Current Transient Spectroscopy of Semi-insulating Single Crystal Cs2Hg6S7 Journal of Electronic Materials. 44: 222-226. DOI: 10.1007/S11664-014-3372-2 |
0.306 |
|
| 2013 |
Wibowo AC, Malliakas CD, Liu Z, Peters JA, Sebastian M, Chung DY, Wessels BW, Kanatzidis MG. Photoconductivity in the chalcohalide semiconductor, SbSeI: a new candidate for hard radiation detection. Inorganic Chemistry. 52: 7045-50. PMID 23713838 DOI: 10.1021/Ic401086R |
0.347 |
|
| 2013 |
Girouard P, Liu Z, Wessels BW. Electrical loss mechanisms of thin film electro-optic modulators for high-bandwidth applications Frontiers in Optics. DOI: 10.1364/Fio.2013.Ftu4E.4 |
0.428 |
|
| 2013 |
Liu Z, Peters JA, Stoumpos CC, Sebastian M, Wessels BW, Im J, Freeman AJ, Kanatzidis MG. Heavy metal ternary halides for room-temperature x-ray and gamma-ray detection Proceedings of Spie - the International Society For Optical Engineering. 8852. DOI: 10.1117/12.2022877 |
0.319 |
|
| 2013 |
Li J, Liu Z, Tu Y, Ho ST, Jung IW, Ocola LE, Wessels BW. Photonic crystal waveguide electro-optic modulator with a wide bandwidth Journal of Lightwave Technology. 31: 1601-1607. DOI: 10.1109/Jlt.2013.2255025 |
0.575 |
|
| 2013 |
Khodaparast GA, Matsuda YH, Saha D, Sanders GD, Stanton CJ, Saito H, Takeyama S, Merritt TR, Feeser C, Wessels BW, Liu X, Furdyna J. Cyclotron resonance in ferromagnetic InMnAs and InMnSb Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.235204 |
0.822 |
|
| 2013 |
Peters JA, Garcia C, Wessels BW. Magnetoresistance in InMnAs/InAs heterojunctions and its dependence on alloy composition and temperature Applied Physics Letters. 103. DOI: 10.1063/1.4816958 |
0.336 |
|
| 2013 |
Stoumpos CC, Malliakas CD, Peters JA, Liu Z, Sebastian M, Im J, Chasapis TC, Wibowo AC, Chung DY, Freeman AJ, Wessels BW, Kanatzidis MG. Crystal growth of the perovskite semiconductor CsPbBr3: A new material for high-energy radiation detection Crystal Growth and Design. 13: 2722-2727. DOI: 10.1021/Cg400645T |
0.314 |
|
| 2012 |
Friedman JS, Rangaraju N, Ismail YI, Wessels BW. InMnAs magnetoresistive spin-diode logic Proceedings of the Acm Great Lakes Symposium On Vlsi, Glsvlsi. 209-214. DOI: 10.1145/2206781.2206833 |
0.717 |
|
| 2012 |
Khodaparast GA, Bhowmick M, Feeser C, Wessels BW, Saha D, Sanders GD, Stanton CJ. Time-resolved spectroscopy of MOVPE-grown III-Mn-V ferromagnetic semiconductors Proceedings of Spie - the International Society For Optical Engineering. 8461. DOI: 10.1117/12.930613 |
0.818 |
|
| 2012 |
Malliakas CD, Wibowo AC, Liu Z, Peters JA, Sebastian M, Jin H, Chung DY, Freeman AJ, Wessels BW, Kanatzidis MG. Mercury and antimony chalcohalide semiconductors as new candidates for radiation detection applications at room temperature Proceedings of Spie - the International Society For Optical Engineering. 8507. DOI: 10.1117/12.929858 |
0.358 |
|
| 2012 |
Liu Z, Peters JA, Nguyen S, Sebastian M, Wessels BW, Wang S, Jin H, Im J, Freeman AJ, Kanatzidis MG. Characterization of thallium-based ternary semiconductor compounds for radiation detection Proceedings of Spie - the International Society For Optical Engineering. 8507. DOI: 10.1117/12.928325 |
0.341 |
|
| 2012 |
Feeser CE, Lari L, Lazarov VK, Peters JA, Wessels BW. Structural and magnetic properties of epitaxial In1–xMnxSb semiconductor alloys with x > 0.08 Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 032801. DOI: 10.1116/1.3698404 |
0.812 |
|
| 2012 |
Friedman JS, Rangaraju N, Ismail YI, Wessels BW. A spin-diode logic family Ieee Transactions On Nanotechnology. 11: 1026-1032. DOI: 10.1109/Tnano.2012.2211892 |
0.74 |
|
| 2012 |
Lari L, Lea S, Feeser C, Wessels BW, Lazarov VK. Characterization of InMnSb epitaxial films for spintronics Journal of Physics: Conference Series. 371. DOI: 10.1088/1742-6596/371/1/012032 |
0.405 |
|
| 2012 |
Cho NK, Peters JA, Liu Z, Wessels BW, Johnsen S, Kanatzidis MG, Song JH, Jin H, Freeman A. Photoluminescent properties of semiconducting Tl 6I 4Se Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/1/015016 |
0.323 |
|
| 2012 |
Peters JA, Cho NK, Liu Z, Wessels BW, Li H, Androulakis J, Kanatzidis MG. Investigation of defect levels in Cs 2Hg 6S 7 single crystals by photoconductivity and photoluminescence spectroscopies Journal of Applied Physics. 112. DOI: 10.1063/1.4750982 |
0.367 |
|
| 2012 |
Lari L, Lea S, Feeser C, Wessels BW, Lazarov VK. Ferromagnetic InMnSb multi-phase films study by aberration-corrected (scanning) transmission electron microscopy Journal of Applied Physics. 111. DOI: 10.1063/1.3676202 |
0.835 |
|
| 2012 |
Li H, Malliakas CD, Liu Z, Peters JA, Jin H, Morris CD, Zhao L, Wessels BW, Freeman AJ, Kanatzidis MG. CsHgInS3: A new quaternary semiconductor for γray detection Chemistry of Materials. 24: 4434-4441. DOI: 10.1021/Cm302838V |
0.308 |
|
| 2012 |
Li H, Peters JA, Liu Z, Sebastian M, Malliakas CD, Androulakis J, Zhao L, Chung I, Nguyen SL, Johnsen S, Wessels BW, Kanatzidis MG. Crystal growth and characterization of the X-ray and γ-ray detector material Cs 2Hg 6S 7 Crystal Growth and Design. 12: 3250-3256. DOI: 10.1021/Cg300385S |
0.303 |
|
| 2011 |
Li J, Liu Z, Wessels BW. Photonic crystal waveguide electro-optic modulator for GHz bandwidth applications Frontiers in Optics. DOI: 10.1364/Fio.2011.Fthw4 |
0.536 |
|
| 2011 |
Liu Z, Peters JA, Zang C, Cho NK, Wessels BW, Johnsen S, Peter S, Androulakis J, Kanatzidis MG, Song JH, Jin H, Freeman AJ. Tl-based wide gap semiconductor materials for x-ray and gamma ray detection Proceedings of Spie - the International Society For Optical Engineering. 8018. DOI: 10.1117/12.883230 |
0.336 |
|
| 2011 |
Liu Z, Li J, Tu Y, Ho ST, Wessels BW. Ultrafast modulators based on nonlinear photonic crystal waveguides Proceedings of Spie - the International Society For Optical Engineering. 7949. DOI: 10.1117/12.880776 |
0.621 |
|
| 2011 |
Li J, Liu Z, Wessels BW, Tu Y, Ho ST, Joshi-Imre A, Ocola LE. Hexagonal photonic crystal waveguide based on barium titanate thin films Proceedings of Spie - the International Society For Optical Engineering. 7934. DOI: 10.1117/12.875072 |
0.59 |
|
| 2011 |
Matsuda YH, Khodaparast GA, Shen R, Takeyama S, Liu X, Furdyna J, Wessels BW. Cyclotron resonance in InMnAs and InMnSb ferromagnetic films Journal of Physics: Conference Series. 334. DOI: 10.1088/1742-6596/334/1/012056 |
0.384 |
|
| 2011 |
Peters JA, Rangaraju N, Feeser C, Wessels BW. Spin-dependent magnetotransport in a p-InMnSb/n -InSb magnetic semiconductor heterojunction Applied Physics Letters. 98. DOI: 10.1063/1.3589987 |
0.781 |
|
| 2011 |
Johnsen S, Liu Z, Peters JA, Song JH, Peter SC, Malliakas CD, Cho NK, Jin H, Freeman AJ, Wessels BW, Kanatzidis MG. Thallium chalcogenide-based wide-band-gap semiconductors: TlGaSe 2 for radiation detectors Chemistry of Materials. 23: 3120-3128. DOI: 10.1021/Cm200946Y |
0.318 |
|
| 2011 |
Liu Z, Peters JA, Wessels BW, Johnsen S, Kanatzidis MG. Thallous chalcogenide (Tl 6I 4Se) for radiation detection at X-ray and γ-ray energies Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 659: 333-335. DOI: 10.1016/J.Nima.2011.07.041 |
0.346 |
|
| 2010 |
Rangaraju N, Peters JA, Wessels BW. Magnetoamplification in a bipolar magnetic junction transistor. Physical Review Letters. 105: 117202. PMID 20867602 DOI: 10.1103/Physrevlett.105.117202 |
0.772 |
|
| 2010 |
Xie S, Sterbinsky GE, Wessels BW, Dravid VP. Defect and interfacial structure of heteroepitaxial Fe3O4/BaTiO3 bilayers. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 16: 300-5. PMID 20377927 DOI: 10.1017/S1431927610000255 |
0.719 |
|
| 2010 |
Khodaparast GA, Bhowmick M, Mishima TD, Santos MB, Feeser C, Wessels BW, Matsuda YH. Probe of coherent and quantum states in narrow-gap based semiconductors with strong spin-orbit coupling Proceedings of Spie. 7760. DOI: 10.1117/12.862183 |
0.805 |
|
| 2010 |
Peters JA, Parashar ND, Rangaraju N, Wessels BW. Magnetotransport properties of InMnSb magnetic semiconductor thin films Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.205207 |
0.832 |
|
| 2010 |
Parashar ND, Rangaraju N, Lazarov VK, Xie S, Wessels BW. High-temperature ferromagnetism in epitaxial (In,Mn)Sb films Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.115321 |
0.819 |
|
| 2010 |
Li J, Liu Z, Wessels BW. Study of domain reversal and its field-dependence in epitaxial BaTiO 3 thin films Journal of Applied Physics. 107. DOI: 10.1063/1.3410795 |
0.561 |
|
| 2010 |
Thompson SM, Lazarov VK, Bradley RC, Deakin T, Kaeswurm B, Sterbinsky GE, Cheng J, Wessels BW. Using the infrared magnetorefractive effect to compare the magnetoresistance in (100) and (111) oriented Fe3 O3 films Journal of Applied Physics. 107. DOI: 10.1063/1.3350911 |
0.726 |
|
| 2010 |
Sterbinsky GE, Wessels BW, Kim JW, Karapetrova E, Ryan PJ, Keavney DJ. Strain-driven spin reorientation in magnetite/barium titanate heterostructures Applied Physics Letters. 96. DOI: 10.1063/1.3330890 |
0.66 |
|
| 2010 |
Peters JA, Wessels BW. Magnetoresistance of InMnAs magnetic semiconductors Physica E: Low-Dimensional Systems and Nanostructures. 42: 1447-1450. DOI: 10.1016/J.Physe.2009.11.107 |
0.461 |
|
| 2010 |
Bhowmick M, Merritt TR, Nontapot K, Wessels BW, Drachenko O, Khodaparast GA. Time resolved spectroscopy of InMnAs using differential transmission technique in mid-infrared Physics Procedia. 3: 1167-1170. DOI: 10.1016/J.Phpro.2010.01.157 |
0.327 |
|
| 2009 |
Lin PT, Russin WA, Imre A, Ocola LE, Wessels BW. Ferroelectric Thin Film Microcavities and their Optical Resonant Properties Mrs Proceedings. 1182. DOI: 10.1557/Proc-1182-Ee09-38 |
0.603 |
|
| 2009 |
Cheng J, Lazarov VK, Sterbinsky GE, Wessels BW. Synthesis, structural and magnetic properties of epitaxial Mg Fe 2 O 4 thin films by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 148-151. DOI: 10.1116/1.3054339 |
0.727 |
|
| 2009 |
Lin PT, Yi F, Ho ST, Wessels BW. Two-dimensional ferroelectric photonic crystal waveguides: Simulation, fabrication, and optical characterization Journal of Lightwave Technology. 27: 4330-4337. DOI: 10.1109/Jlt.2009.2023808 |
0.591 |
|
| 2009 |
Rangaraju N, Li P, Wessels BW. Giant magnetoresistance of magnetic semiconductor heterojunctions Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.205209 |
0.771 |
|
| 2009 |
Lin PT, Liu Z, Wessels BW. Ferroelectric thin film photonic crystal waveguide and its electro-optic properties Journal of Optics a: Pure and Applied Optics. 11. DOI: 10.1088/1464-4258/11/7/075005 |
0.608 |
|
| 2009 |
Parashar ND, Keavney DJ, Wessels BW. Electronic structure of substitutional Mn in epitaxial In0.965 Mn0.035 Sb film Applied Physics Letters. 95. DOI: 10.1063/1.3256192 |
0.824 |
|
| 2009 |
Li J, Lin PT, Wessels BW. Polarization reversal and backswitching dynamics in epitaxial BaTi O 3 thin films Journal of Applied Physics. 106. DOI: 10.1063/1.3212975 |
0.707 |
|
| 2009 |
Xie S, Pan Z, Cheng J, Sterbinsky GE, Wessels BW, Dravid VP. Growth and structural characterization of multiferroic thin films and nanopatterns Microscopy and Microanalysis. 15: 1026-1027. DOI: 10.1017/S1431927609097050 |
0.716 |
|
| 2009 |
Parashar ND, Chiu PT, Wessels BW. Reflectance magnetic circular dichroism studies at the Γ-point in InMnAs semiconductor films Physica E: Low-Dimensional Systems and Nanostructures. 41: 1147-1150. DOI: 10.1016/J.Physe.2008.12.027 |
0.832 |
|
| 2009 |
Lin PT, Imre A, Ocola LE, Wessels BW. Thin film ferroelectric photonic crystals and their application to thermo-optic switches Optics Communications. 282: 3364-3367. DOI: 10.1016/J.Optcom.2009.03.063 |
0.641 |
|
| 2009 |
Parashar ND, Chiu PT, Wessels BW. Structural and magnetic properties of ferromagnetic In1-xMnxAs1-yPy layers Journal of Magnetism and Magnetic Materials. 321: 1058-1062. DOI: 10.1016/J.Jmmm.2008.10.024 |
0.82 |
|
| 2008 |
Rangaraju N, Wessels BW. Magnetocapacitance effect in InMnAs/InAs p-n heterojunctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1526-1529. DOI: 10.1116/1.2929861 |
0.778 |
|
| 2008 |
Liu Z, Lin PT, Wessels BW. Cascaded Bragg reflectors for a barium titanate thin film electro-optic modulator Journal of Optics a: Pure and Applied Optics. 10. DOI: 10.1088/1464-4258/10/01/015302 |
0.608 |
|
| 2008 |
Wessels BW. Ferromagnetic semiconductors and the role of disorder New Journal of Physics. 10. DOI: 10.1088/1367-2630/10/5/055008 |
0.369 |
|
| 2008 |
Xie S, Cheng J, Wessels BW, Dravid VP. Interfacial structure and chemistry of epitaxial CoFe2O 4 thin films on SrTiO3 and MgO substrates Applied Physics Letters. 93. DOI: 10.1063/1.3006060 |
0.461 |
|
| 2008 |
Liu Z, Meier AL, Wessels BW. Dynamic response of polydomain ferroelectric barium titanate epitaxial thin films and its field dependence Journal of Applied Physics. 104. DOI: 10.1063/1.2978216 |
0.672 |
|
| 2008 |
Lin PT, Wessels BW, Jang JI, Ketterson JB. Highly efficient broadband second harmonic generation using polydomain epitaxial barium titanate thin film waveguides Applied Physics Letters. 92. DOI: 10.1063/1.2936934 |
0.625 |
|
| 2008 |
Cheng J, Sterbinsky GE, Wessels BW. Magnetic and magneto-optical properties of heteroepitaxial magnetite thin films Journal of Crystal Growth. 310: 3730-3734. DOI: 10.1016/J.Jcrysgro.2008.05.048 |
0.747 |
|
| 2007 |
Lin PT, Liu Z, Wessels BW. Simulation and Fabrication of Two Dimensional Nonlinear Photonic Crystals using Barium Titanate Thin Films Mrs Proceedings. 1014. DOI: 10.1557/Proc-1014-Aa07-07 |
0.654 |
|
| 2007 |
Liu Z, Lin P, Wessels BW. Bragg Reflector Waveguide and Electro-Optic Modulator Based on Barium Titanate Epitaxial Thin Films Mrs Proceedings. 1014. DOI: 10.1557/Proc-1014-Aa07-01 |
0.638 |
|
| 2007 |
Meier AL, Desai AY, Wang L, Marks TJ, Wessels BW. Phase stability of heteroepitaxial polydomain BaTiO3 thin films Journal of Materials Research. 22: 1384-1389. DOI: 10.1557/Jmr.2007.0178 |
0.738 |
|
| 2007 |
Wessels BW. Ferroelectric epitaxial thin films for integrated optics Annual Review of Materials Research. 37: 659-679. DOI: 10.1146/Annurev.Matsci.37.052506.084226 |
0.449 |
|
| 2007 |
Sterbinsky GE, Cheng J, Chiu PT, Wessels BW, Keavney DJ. Investigation of heteroepitaxial growth of magnetite thin films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1389-1392. DOI: 10.1116/1.2757185 |
0.741 |
|
| 2007 |
Zheng JG, Sterbinsky GE, Cheng J, Wessels BW. Epitaxial Fe3 O4 on SrTi O3 characterized by transmission electron microscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1520-1523. DOI: 10.1116/1.2748412 |
0.732 |
|
| 2007 |
Niu F, Wessels BW. Epitaxial growth and strain relaxation of BaTi O3 thin films on SrTi O3 buffered (001) Si by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1053-1057. DOI: 10.1116/1.2539503 |
0.442 |
|
| 2007 |
Chiu PT, Wessels BW. Dependence of magnetic circular dichroism on doping and temperature in In1-x Mnx As epitaxial films Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.165201 |
0.426 |
|
| 2007 |
Liu Z, Lin PT, Wessels BW, Yi F, Ho ST. Nonlinear photonic crystal waveguide structures based on barium titanate thin films and their optical properties Applied Physics Letters. 90. DOI: 10.1063/1.2739083 |
0.609 |
|
| 2007 |
Kidner NJ, Meier A, Homrighaus ZJ, Wessels BW, Mason TO, Garboczi EJ. Complex electrical (impedance/dielectric) properties of electroceramic thin films by impedance spectroscopy with interdigital electrodes Thin Solid Films. 515: 4588-4595. DOI: 10.1016/J.Tsf.2006.11.038 |
0.703 |
|
| 2007 |
Sterbinsky GE, May SJ, Chiu PT, Wessels BW. Magnetic properties of MnAs thin films grown on GaAs (0 0 1) by MOVPE Physica B: Condensed Matter. 388: 370-373. DOI: 10.1016/J.Physb.2006.06.159 |
0.824 |
|
| 2007 |
Niu F, Wessels BW. Surface and interfacial structure of epitaxial SrTiO3 thin films on (0 0 1) Si grown by molecular beam epitaxy Journal of Crystal Growth. 300: 509-518. DOI: 10.1016/J.Jcrysgro.2006.12.024 |
0.392 |
|
| 2006 |
Perea DE, Allen JE, May SJ, Wessels BW, Seidman DN, Lauhon LJ. Three-dimensional nanoscale composition mapping of semiconductor nanowires. Nano Letters. 6: 181-5. PMID 16464031 DOI: 10.1021/Nl051602P |
0.572 |
|
| 2006 |
Ramlan DG, May SJ, Zheng JG, Allen JE, Wessels BW, Lauhon LJ. Ferromagnetic self-assembled quantum dots on semiconductor nanowires. Nano Letters. 6: 50-4. PMID 16402786 DOI: 10.1021/Nl0519276 |
0.626 |
|
| 2006 |
Niu F, Meier AL, Wessels BW. Epitaxial growth and strain relaxation of MgO thin films on Si grown by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2586-2591. DOI: 10.1116/1.2362759 |
0.71 |
|
| 2006 |
Chiu PT, Wessels BW. Evidence of room temperature sp-d exchange in InMn As epitaxial films Applied Physics Letters. 89. DOI: 10.1063/1.2345604 |
0.436 |
|
| 2006 |
May SJ, Phillips PJ, Wessels BW. Negative magnetoresistance in metal/oxide/lnMnAs tunnel junctions Journal of Applied Physics. 100. DOI: 10.1063/1.2337399 |
0.625 |
|
| 2006 |
Chiu PT, May SJ, Wessels BW. Origin of uniaxial magnetic anisotropy in epitaxial InMnAs thin films Journal of Applied Physics. 99. DOI: 10.1063/1.2189967 |
0.716 |
|
| 2006 |
Han B, Wessels BW, Ulmer MP. Investigation of nanoscale composition fluctuations in InGaN using optical transmission spectroscopy and near-field scanning optical microscopy Journal of Applied Physics. 99. DOI: 10.1063/1.2189019 |
0.343 |
|
| 2006 |
May SJ, Wessels BW. High-field magnetoresistance in p-(In,Mn)As/n-InAs heterojunctions Applied Physics Letters. 88. DOI: 10.1063/1.2174108 |
0.669 |
|
| 2006 |
Siegmund O, Vallerga J, McPhate J, Malloy J, Tremsin A, Martin A, Ulmer M, Wessels B. Development of GaN photocathodes for UV detectors Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 567: 89-92. DOI: 10.1016/J.Nima.2006.05.117 |
0.325 |
|
| 2006 |
Meier AR, Niu F, Wessels BW. Integration of BaTiO3 on Si (0 0 1) using MgO/STO buffer layers by molecular beam epitaxy Journal of Crystal Growth. 294: 401-406. DOI: 10.1016/J.Jcrysgro.2006.06.026 |
0.406 |
|
| 2006 |
May SJ, Blattner AJ, Eam DP, Wessels BW. Direct observation of room temperature magnetism in (In,Mn)As thin films by magnetic force microscopy Applied Surface Science. 252: 3509-3513. DOI: 10.1016/J.Apsusc.2005.05.036 |
0.833 |
|
| 2006 |
Perea DE, Lensch JL, May SJ, Wessels BW, Lauhon LJ. Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography Applied Physics a: Materials Science and Processing. 85: 271-275. DOI: 10.1007/S00339-006-3710-1 |
0.57 |
|
| 2006 |
Tang P, Meier AL, Towner DJ, Wessels BW. Ultra-wide bandwidth, thin film electro-optic modulators Ceramic Transactions. 196: 237-241. |
0.822 |
|
| 2005 |
Tang P, Meier AL, Towner DJ, Wessels BW. BaTiO3 thin-film waveguide modulator with a low voltage-length product at near-infrared wavelengths of 0.98 and 1.55 microm. Optics Letters. 30: 254-6. PMID 15751876 DOI: 10.1364/Ol.30.000254 |
0.809 |
|
| 2005 |
Zolotoyabko E, Quintana JP, Towner DJ, Wessels BW. Stroboscopic x-ray diffraction measurements of sub-ns domain dynamics in ferroelectric films Materials Research Society Symposium Proceedings. 833: 183-188. DOI: 10.1557/Proc-833-G5.2 |
0.783 |
|
| 2005 |
Tang P, Meier AL, Towner DJ, Wessels BW. BaTiO3 thin-film waveguide modulator with a low voltage-length product at near-infrared wavelengths of 0.98 and 1.55 μm Optics Letters. 30: 254-256. DOI: 10.1364/OL.30.000254 |
0.811 |
|
| 2005 |
Ulmer MP, Han B, Wessels BW, Siegmund OHW, Tremsin AS. InGaN: Characterization and first photo-cathode results Proceedings of Spie - the International Society For Optical Engineering. 5898: 1-10. DOI: 10.1117/12.615701 |
0.449 |
|
| 2005 |
Dhote AM, Meier AL, Towner DJ, Wessels BW, Ni J, Marks TJ. Low temperature deposition of epitaxial BaTi O3 films in a rotating disk vertical MOCVD reactor Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1674-1678. DOI: 10.1116/1.1993621 |
0.816 |
|
| 2005 |
May SJ, Wessels BW. Electronic and magnetotransport properties of ferromagnetic p -(In,Mn)As n -InAs heterojunctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1769-1772. DOI: 10.1116/1.1942506 |
0.669 |
|
| 2005 |
Lev U, Zolotoyabko E, Towner DJ, Meier AL, Wessels BW. Microstructure and strain in thin ferroelectric BaTiO3 films epitaxially grown on MgO substrates Journal of Physics D: Applied Physics. 38. DOI: 10.1088/0022-3727/38/10A/035 |
0.825 |
|
| 2005 |
Chiu PT, May SJ, Blattner AJ, Wessels BW. Magnetic anisotropy in epitaxial InMnAs Aip Conference Proceedings. 772: 347-348. DOI: 10.1063/1.1994131 |
0.821 |
|
| 2005 |
Han B, Wessels BW, Ulmer MP. Investigation of composition fluctuations in GaN:Mg using optical transmission spectroscopy, near-field scanning optical microscopy, and scanning Kelvin probe microscopy Journal of Applied Physics. 98. DOI: 10.1063/1.1948527 |
0.321 |
|
| 2005 |
Chiu PT, Wessels BW, Keavney DJ, Freeland JW. Local environment of ferromagnetically ordered Mn in epitaxial InMnAs Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1855427 |
0.376 |
|
| 2005 |
Han B, Wessels BW, Ulmer MP. Optical investigation of electronic states of Mn 4+ ions in p-type GaN Applied Physics Letters. 86: 042505-1-042505-3. DOI: 10.1063/1.1853525 |
0.303 |
|
| 2005 |
Tang P, Meier AL, Towner DJ, Wessels BW. High-speed travelling-wave BaTiO3 thin-film electro-optic modulators Electronics Letters. 41: 53-54. DOI: 10.1049/El:20053260 |
0.819 |
|
| 2005 |
Ahn K, Wessels BW, Sampath S. Spinel humidity sensors prepared by thermal spray direct writing Sensors and Actuators, B: Chemical. 107: 342-346. DOI: 10.1016/J.Snb.2004.10.020 |
0.404 |
|
| 2005 |
Sun DG, Liu Z, Huang Y, Ho ST, Towner DJ, Wessels BW. Performance simulation for ferroelectric thin-film based waveguide electro-optic modulators Optics Communications. 255: 319-330. DOI: 10.1016/J.Optcom.2005.06.028 |
0.8 |
|
| 2005 |
May SJ, Zheng J, Wessels BW, Lauhon LJ. Cover Picture: Dendritic Nanowire Growth Mediated by a Self-Assembled Catalyst (Adv. Mater. 5/2005) Advanced Materials. 17: NA-NA. DOI: 10.1002/Adma.200590026 |
0.549 |
|
| 2005 |
May SJ, Zheng JG, Wessels BW, Lauhon LJ. Dendritic nanowire growth mediated by a self-assembled catalyst Advanced Materials. 17: 598-602. DOI: 10.1002/Adma.200401332 |
0.585 |
|
| 2004 |
Tang P, Towner D, Hamano T, Meier A, Wessels B. Electrooptic modulation up to 40 GHz in a barium titanate thin film waveguide modulator. Optics Express. 12: 5962-7. PMID 19488237 DOI: 10.1364/Opex.12.005962 |
0.819 |
|
| 2004 |
Tang P, Towner DJ, Hamano T, Meier AL, Wessels BW. Electrooptic modulation up to 40 GHz in a barium titanate thin film waveguide modulator Optics Express. 12: 5962-5967. DOI: 10.1364/OPEX.12.005962 |
0.823 |
|
| 2004 |
Tang P, Towner DJ, Meier AL, Wessels BW. Low-loss electrooptic BaTiO3 thin film waveguide modulator Ieee Photonics Technology Letters. 16: 1837-1839. DOI: 10.1109/Lpt.2004.831255 |
0.812 |
|
| 2004 |
May SJ, Blattner AJ, Wessels BW. Negative magnetoresistance in (In,Mn)As semiconductors Physical Review B - Condensed Matter and Materials Physics. 70: 073303-1-073303-4. DOI: 10.1103/Physrevb.70.073303 |
0.816 |
|
| 2004 |
Tang P, Towner DJ, Meier AL, Wessels BW. Low-voltage, polarization-insensitive, electro-optic modulator based on a polydomain barium titanate thin film Applied Physics Letters. 85: 4615-4617. DOI: 10.1063/1.1819515 |
0.826 |
|
| 2004 |
Chiu PT, May SJ, Wessels BW. Room-temperature magneto-optical activity of InMnAs thin films Applied Physics Letters. 85: 780-782. DOI: 10.1063/1.1773618 |
0.713 |
|
| 2004 |
Han B, Korotkov RY, Wessels BW, Ulmer MP. Optical properties of Mn 4+ ions in GaN:Mn codoped with Mg acceptors Applied Physics Letters. 84: 5320-5322. DOI: 10.1063/1.1766082 |
0.697 |
|
| 2004 |
Soo YL, Kim S, Kao YH, Blattner AJ, Wessels BW, Khalid S, Sanchez Hanke C, Kao CC. Local structure around Mn atoms in room-temperature ferromagnetic (In,Mn) as thin films probed by extended x-ray absorption fine structure Applied Physics Letters. 84: 481-483. DOI: 10.1063/1.1640465 |
0.841 |
|
| 2004 |
Blattner AJ, Wessels BW. Ferromagnetism in (In, Mn)As alloy thin films grown by metalorganic vapor phase epitaxy Applied Surface Science. 221: 155-159. DOI: 10.1016/S0169-4332(03)00873-0 |
0.839 |
|
| 2004 |
Chiu PT, Blattner AJ, May SJ, Wessels BW. Optical properties of Mn-doped InAs and InMnAs epitaxial films Physica B: Condensed Matter. 344: 379-384. DOI: 10.1016/J.Physb.2003.10.029 |
0.824 |
|
| 2004 |
Han B, Ulmer MP, Wessels BW. Phonon-Assisted deep level luminescence in heavily Mg-Doped inGaN Journal of Electronic Materials. 33: 431-435. DOI: 10.1007/S11664-004-0197-4 |
0.4 |
|
| 2004 |
Niu F, Meier A, Wessels BW. Integration of MgO on Si(001) using SrO and SrTiO3 buffer layers by molecular beam epitaxy Journal of Electroceramics. 13: 149-154. DOI: 10.1007/S10832-004-5091-1 |
0.401 |
|
| 2004 |
Wessels BW. Thin film ferroelectrics for guided wave devices Journal of Electroceramics. 13: 135-138. DOI: 10.1007/S10832-004-5089-8 |
0.431 |
|
| 2004 |
Towner DJ, Lansford TJ, Wessels BW. Three dimensional domain structure in epitaxial barium titanate thin films Journal of Electroceramics. 13: 89-93. DOI: 10.1007/S10832-004-5081-3 |
0.787 |
|
| 2003 |
Ahn K, Wessels BW, Sampath S. Dielectric properties of plasma-spray-deposited BaTiO3 and Ba0.68Sr0.32TiO3 thick films Journal of Materials Research. 18: 1227-1231. DOI: 10.1557/Jmr.2003.0168 |
0.578 |
|
| 2003 |
Nichols BM, Hoerman BH, Hwang J, Mason TO, Wessels BW. Phase stability of epitaxial KTaxNb1−xO3 thin films deposited by metalorganic chemical vapor deposition Journal of Materials Research. 18: 106-110. DOI: 10.1557/Jmr.2003.0015 |
0.821 |
|
| 2003 |
Ulmer MP, Wessels BW, Han B, Gregie J, Tremsin A, Siegmund OHW. Advances in Wide-Band-Gap Semiconductor Based Photocathode Devices for Low Light Level Applications Proceedings of Spie - the International Society For Optical Engineering. 5164: 144-154. DOI: 10.1117/12.459765 |
0.482 |
|
| 2003 |
Han B, Gregie JM, Wessels BW. Blue emission band in compensated GaN:Mg codoped with Si Physical Review B. 68. DOI: 10.1103/Physrevb.68.045205 |
0.32 |
|
| 2003 |
Zolotoyabko E, Quintana JP, Towner DJ, Hoerman BH, Wessels BW. Nanosecond-scale domain dynamics in BaTiO 3 probed by time-resolved X-ray diffraction Ferroelectrics. 290: 115-124. DOI: 10.1080/00150190390222358 |
0.788 |
|
| 2003 |
Hamano T, Towner DJ, Wessels BW. Relative dielectric constant of epitaxial BaTiO 3 thin films in the GHz frequency range Applied Physics Letters. 83: 5274-5276. DOI: 10.1063/1.1635967 |
0.792 |
|
| 2003 |
Tang P, Towner DJ, Meier AL, Wessels BW. Polarisation-insensitive Si3N4 strip-loaded BaTiO3 thin-film waveguide with low propagation losses Electronics Letters. 39: 1651-1652. DOI: 10.1049/El:20031094 |
0.807 |
|
| 2003 |
Korotkov RY, Reshchikov MA, Wessels BW. Acceptors in undoped GaN studied by transient photoluminescence Physica B: Condensed Matter. 325: 1-7. DOI: 10.1016/S0921-4526(02)01209-7 |
0.7 |
|
| 2003 |
Hoerman BH, Nichols BM, Wessels BW. The electro-optic properties of epitaxial KTaxNb1-xO3 thin films Optics Communications. 219: 377-382. DOI: 10.1016/S0030-4018(03)01128-3 |
0.826 |
|
| 2003 |
Blattner AJ, Prabhumirashi PL, Dravid VP, Wessels BW. Origin of room temperature ferromagnetism in homogeneous (In, Mn)As thin films Journal of Crystal Growth. 259: 8-11. DOI: 10.1016/S0022-0248(03)01569-0 |
0.84 |
|
| 2003 |
Towner DJ, Ni J, Marks TJ, Wessels BW. Effects of two-stage deposition on the structure and properties of heteroepitaxial BaTiO3 thin films Journal of Crystal Growth. 255: 107-113. DOI: 10.1016/S0022-0248(03)01195-3 |
0.806 |
|
| 2003 |
May SJ, Blattner AJ, Wessels BW. Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy Physica B: Condensed Matter. 340: 870-873. DOI: 10.1016/J.Physb.2003.09.223 |
0.833 |
|
| 2003 |
Han B, Ulmer MP, Wessels BW. Investigation of deep-level luminescence in In0.07Ga 0.93N:Mg Physica B: Condensed Matter. 340: 470-474. DOI: 10.1016/J.Physb.2003.09.038 |
0.347 |
|
| 2002 |
Ahn K, Wessels BW, Sampath S. Interfacial Layer Effects in Ba1-xSrxTiO3 Thick Films prepared by Plasma Spray Mrs Proceedings. 758. DOI: 10.1557/Proc-758-Ll2.7 |
0.58 |
|
| 2002 |
Han B, Gregie JM, Ulmer MP, Wessels BW. Deep donor-acceptor pair luminescence in codoped GaN Materials Research Society Symposium - Proceedings. 743: 355-360. DOI: 10.1557/Proc-743-L5.8 |
0.786 |
|
| 2002 |
Teren AR, Kim SS, Ho ST, Wessels BW. Erbium-doped barium titanate thin film waveguides for integrated optical amplifiers Materials Research Society Symposium - Proceedings. 688: 413-418. DOI: 10.1557/Proc-694-K9.7 |
0.83 |
|
| 2002 |
Chattopadhyay S, Teren AR, Hwang J, Mason TO, Wessels BW. Diffuse Phase Transition in Epitaxial BaTiO3 Thin Films Journal of Materials Research. 17: 669-674. DOI: 10.1557/Jmr.2002.0095 |
0.839 |
|
| 2002 |
Chattopadhyay S, Nichols BM, Hwang J, Mason TO, Wessels BW. Dielectric properties of epitaxial KNbO3 ferroelectric thin films Journal of Materials Research. 17: 275-278. DOI: 10.1557/Jmr.2002.0039 |
0.756 |
|
| 2002 |
Blattner AJ, Wessels BW. Ferromagnetism in (In,Mn)As diluted magnetic semiconductor thin films grown by metalorganic vapor phase epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1582-1585. DOI: 10.1116/1.1491991 |
0.833 |
|
| 2002 |
Shahedipour FS, Ulmer MP, Wessels BW, Joseph CL, Nihashi T. Efficient GaN photocathodes for low-level ultraviolet signal detection Ieee Journal of Quantum Electronics. 38: 333-335. DOI: 10.1109/3.992544 |
0.317 |
|
| 2002 |
Hoerman BH, Nichols BM, Wessels BW. Dynamic response of the dielectric and electro-optic properties of epitaxial ferroelectric thin films Physical Review B. 65. DOI: 10.1103/Physrevb.65.224110 |
0.814 |
|
| 2002 |
Vlasenko LS, Bozdog C, Watkins GD, Shahedipour F, Wessels BW. Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN Physical Review B - Condensed Matter and Materials Physics. 65: 2052021-2052024. DOI: 10.1103/Physrevb.65.205202 |
0.356 |
|
| 2002 |
Zolotoyabko E, Quintana JP, Hoerman BH, Wessels BW. Fast time-resolved x-ray diffraction in BaTiO3 films subjected to a strong high-frequency electric field Applied Physics Letters. 80: 3159-3161. DOI: 10.1063/1.1476057 |
0.76 |
|
| 2002 |
Korotkov RY, Gregie JM, Wessels BW. Optical properties of the deep Mn acceptor in GaN:Mn Applied Physics Letters. 80: 1731-1733. DOI: 10.1063/1.1456544 |
0.806 |
|
| 2001 |
Ahn K, Wessels BW, Greenlaw R, Sampath S. Dielectric Properties of Spray Deposited BaTiO3 and Ba0.68Sr0.32TiO3 Mrs Proceedings. 698. DOI: 10.1557/Proc-698-Q3.6.1 |
0.556 |
|
| 2001 |
Ulmer MP, Wessels BW, Shahedipour F, Korotkov RY, Joseph C, Nihashi T. Progress in the fabrication of GaN photo-cathodes Proceedings of Spie - the International Society For Optical Engineering. 4288: 246-253. DOI: 10.1117/12.429433 |
0.708 |
|
| 2001 |
Guha S, Keller RC, Yang V, Shahedipour F, Wessels BW. Comparative optical studies of p-type and unintentionally doped GaN: The influence of annealing Applied Physics Letters. 78: 58-60. DOI: 10.1063/1.1337645 |
0.396 |
|
| 2001 |
Korotkov RY, Gregie JM, Wessels BW. Electrical properties of p-type GaN:Mg codoped with oxygen Applied Physics Letters. 78: 222-224. DOI: 10.1063/1.1335542 |
0.795 |
|
| 2001 |
Korotkov RY, Gregie JM, Wessels BW. Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy Physica B: Condensed Matter. 308: 30-33. DOI: 10.1016/S0921-4526(01)00660-3 |
0.818 |
|
| 2001 |
Korotkov RY, Niu F, Gregie JM, Wessels BW. Investigation of the defect structure of GaN heavily doped with oxygen Physica B: Condensed Matter. 308: 26-29. DOI: 10.1016/S0921-4526(01)00658-5 |
0.791 |
|
| 2001 |
Korotkov RY, Gregie JM, Han B, Wessels BW. Optical study of GaN: Mn co-doped with Mg grown by metal organic vapor phase epitaxy Physica B: Condensed Matter. 308: 18-21. DOI: 10.1016/S0921-4526(01)00654-8 |
0.807 |
|
| 2001 |
Blattner AJ, Lensch J, Wessels BW. Growth and characterization of OMVPE grown (In,Mn)As diluted magnetic semiconductor Journal of Electronic Materials. 30: 1408-1411. DOI: 10.1007/S11664-001-0192-Y |
0.502 |
|
| 2000 |
Korotkov R, Wessels B. Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 5: 301-307. DOI: 10.1557/S1092578300004427 |
0.664 |
|
| 2000 |
Korotkov RY, Gregie JM, Wessels BW. Photoluminescence Studies of p-type GaN:Mg Co-doped with Oxygen Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G6.39 |
0.791 |
|
| 2000 |
Korotkov RY, Gregie JM, Wessels BW. Optical Study of GaN Doped with Mn Grown by Metal Organic Vapor Phase Epitaxy Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G3.7 |
0.811 |
|
| 2000 |
Gregie JM, Korotkov RY, Wessels BW. Deep Level Formation in Undoped and Oxygen-Doped GaN Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G11.56 |
0.809 |
|
| 2000 |
Niu F, Teren A, Hoerman B, Wessels B. Epitaxial Ferroelectric BaTiO3 Thin Films for Microphotonic Applications Mrs Proceedings. 637. DOI: 10.1557/Proc-637-E1.9 |
0.837 |
|
| 2000 |
Niu F, Hoerman B, Wessels B. Metalorganic Molecular Beam Epitaxy of Magnesium Oxide on Silicon Mrs Proceedings. 619. DOI: 10.1557/Proc-619-149 |
0.78 |
|
| 2000 |
Reshchikov MA, Shahedipour F, Korotkov RY, Wessels BW, Ulmer MP. Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers Journal of Applied Physics. 87: 3351-3354. DOI: 10.1063/1.372348 |
0.696 |
|
| 2000 |
Ves S, Venkateswaran UD, Loa I, Syassen K, Shahedipour F, Wessels BW. Pressure dependence of the blue luminescence in Mg-doped GaN Applied Physics Letters. 77: 2536-2538. DOI: 10.1063/1.1319180 |
0.348 |
|
| 2000 |
Shahedipour F, Wessels BW. Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg Applied Physics Letters. 76: 3011-3013. DOI: 10.1063/1.126562 |
0.315 |
|
| 2000 |
Niu F, Hoerman BH, Wessels BW. Growth and microstructure of MgO thin films on Si(100) substrates by metal-organic molecular beam epitaxy Applied Surface Science. 161: 74-77. DOI: 10.1016/S0169-4332(00)00127-6 |
0.796 |
|
| 2000 |
Gill DM, Ford GM, Block BA, Kim SS, Wessels BW, Ho ST. Guided wave absorption and fluorescence in epitaxial Er:BaTiO3 on MgO Thin Solid Films. 365: 126-128. DOI: 10.1016/S0040-6090(00)00655-6 |
0.347 |
|
| 2000 |
Pillai MR, Theiring SC, Barnett SA, Wessels BW, Desikan A, Kvam EP. Effect of Sb pre-deposition on the compositional profiles in MOVPE-grown InAsSb/InAs(1 1 1) multi-quantum wells Journal of Crystal Growth. 208: 79-84. DOI: 10.1016/S0022-0248(99)00452-2 |
0.349 |
|
| 2000 |
Teren AR, Belot JA, Edleman NL, Marks TJ, Wessels BW. MOCVD of epitaxial BaTiO3 films using a liquid barium precursor Advanced Materials. 12: 175-177. DOI: 10.1002/1521-3862(200008)6:4<175::Aid-Cvde175>3.0.Co;2-Q |
0.819 |
|
| 1999 |
Korotkov R, Wessels B. Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy Mrs Proceedings. 595. DOI: 10.1557/S1092578300004427 |
0.688 |
|
| 1999 |
Niu F, Hoerman B, Wessels B. Growth of MgO by Metal-Organic Molecular Beam Epitaxy Mrs Proceedings. 606. DOI: 10.1557/Proc-606-45 |
0.791 |
|
| 1999 |
Hoerman BH, Majewski JC, Nichols BM, Teren A, Wessels BW. Dynamic Response of the Electro-Optic Effect in Epitaxial Ferroelectric Thin Films Mrs Proceedings. 597. DOI: 10.1557/Proc-597-157 |
0.809 |
|
| 1999 |
Teren AR, Wessels BW. Luminescence Efficiency of Erbium-Doped BaTiO3 Thin Films Mrs Proceedings. 597. DOI: 10.1557/Proc-597-15 |
0.831 |
|
| 1999 |
Nichols BM, Wessels BW, Belot JA, Marks TJ. Epitaxial KNbO3 and its nonlinear optical properties Materials Research Society Symposium - Proceedings. 541: 741-746. DOI: 10.1557/Proc-541-741 |
0.666 |
|
| 1999 |
Reshchikov MA, Yi G, Wessels BW. Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities Physical Review B. 59: 13176-13183. DOI: 10.1103/Physrevb.59.13176 |
0.327 |
|
| 1999 |
Hoerman BH, Nichols BM, Nystrom MJ, Wessels BW. Dynamic response of the electro-optic effect in epitaxial KNbO3 Applied Physics Letters. 75: 2707-2709. DOI: 10.1063/1.125123 |
0.813 |
|
| 1999 |
Reshchikov MA, Shahedipour F, Korotkov RY, Ulmer MP, Wessels BW. Deep acceptors in undoped GaN Physica B: Condensed Matter. 273: 105-108. DOI: 10.1016/S0921-4526(99)00417-2 |
0.682 |
|
| 1999 |
Korotkov RY, Reshchikov MA, Wessels BW. Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy Physica B: Condensed Matter. 273: 80-83. DOI: 10.1016/S0921-4526(99)00411-1 |
0.692 |
|
| 1998 |
Reshchikov MA, Yi G, Wessels BW. Defect Luminescence in Heavily Mg Doped GaN Mrs Proceedings. 537. DOI: 10.1557/S1092578300003677 |
0.333 |
|
| 1998 |
Chattopadhyay S, Teren A, Wessels B. Strain in Epitaxial BaTiO3 Thin Films Prepared by MOCVD Mrs Proceedings. 541. DOI: 10.1557/Proc-541-489 |
0.828 |
|
| 1998 |
Yi GC, Block BA, Ford GM, Wessels BW. Luminescence quenching in Er-doped BaTiO3 thin films Applied Physics Letters. 73: 1625-1627. DOI: 10.1063/1.122226 |
0.469 |
|
| 1998 |
Hoerman BH, Ford GM, Kaufmann LD, Wessels BW. Dielectric properties of epitaxial BaTiO3 thin films Applied Physics Letters. 73: 2248-2250. DOI: 10.1063/1.121691 |
0.801 |
|
| 1998 |
Chang K, Wessels B, Qian W, Dravid V, Schindler J, Kannewurf C, Studebaker D, Marks T, Feenstra R. In situ growth and doping of oxycarbonate Sr2CuO2(CO3) epitaxial thin films Physica C: Superconductivity. 303: 11-20. DOI: 10.1016/S0921-4534(98)00218-4 |
0.467 |
|
| 1998 |
Wessels B. Ferroelectric oxide epitaxial thin films: synthesis and non-linear optical properties Journal of Crystal Growth. 195: 706-710. DOI: 10.1016/S0022-0248(98)00697-6 |
0.408 |
|
| 1997 |
Wessels BW. Epitaxial Ferroelectric Oxides for Electro-Optic and Non-Linear Optical Applications Mrs Proceedings. 495. DOI: 10.1557/Proc-495-23 |
0.408 |
|
| 1997 |
Gill DM, Ford GM, Block BA, Wessels BW, Ho ST. Guided Wave Fluorescence In Thin Film Er- Doped Barium Titanate Mrs Proceedings. 486. DOI: 10.1557/Proc-486-343 |
0.385 |
|
| 1997 |
Nystrom MJ, Wessels BW. The Effects Of Substrate Thermal Mismatch on the Domain Structure of MOCVD-Derived Potassium Niobate Thin Films Mrs Proceedings. 474. DOI: 10.1557/Proc-474-31 |
0.427 |
|
| 1997 |
Yi G, Block BA, Wessels BW. Hydrogen complexes in epitaxial BaTiO3 thin films Applied Physics Letters. 71: 327-329. DOI: 10.1063/1.119529 |
0.408 |
|
| 1997 |
Gill DM, Conrad CW, Ford G, Wessels BW, Ho ST. Thin-film channel waveguide electro-optic modulator in epitaxial BaTiO3 Applied Physics Letters. 71: 1783-1785. DOI: 10.1063/1.119397 |
0.419 |
|
| 1997 |
Yi G, Wessels BW. Carbon–hydrogen complexes in vapor phase epitaxial GaN Applied Physics Letters. 70: 357-359. DOI: 10.1063/1.118388 |
0.376 |
|
| 1997 |
Schindler J, Duran C, DiMeo F, Wessels B, Hinds B, McNeely R, Marks T, Kannewurf C. Characteristic doping-dependent properties of HTS cuprate thin films prepared via MOCVD Journal of Alloys and Compounds. 251: 347-350. DOI: 10.1016/S0925-8388(96)02698-9 |
0.486 |
|
| 1997 |
Chang K, Wessels B, Studebaker D, Marks T, Schindler J, Kannewurf C, Aprili M, Greene L. Growth and properties of Sr2CuO2(CO3) thin films prepared from metal-organic chemical vapor deposition-derived precursor films Physica C: Superconductivity. 291: 242-248. DOI: 10.1016/S0921-4534(97)01665-1 |
0.483 |
|
| 1996 |
Nystrom MJ, Wessels BW. The Effects of Domain Structure on the Electro-Optic Response of Potassium Niobate Thin Films Mrs Proceedings. 453. DOI: 10.1557/Proc-453-259 |
0.477 |
|
| 1996 |
Block BA, Wessels BW, Gill DM, Conrad CW, Ho ST. The Optical Properties of Channel Waveguides in Batio3 Thin Films Mrs Proceedings. 446. DOI: 10.1557/Proc-446-349 |
0.395 |
|
| 1996 |
Wessels BW. The Morphological Stability of Strained Epitaxial Layers Mrs Proceedings. 440. DOI: 10.1557/Proc-440-335 |
0.324 |
|
| 1996 |
Gilbert S, Wessels B, Brazis P, Hogan T, Kannewurf C. Defects and Electronic Transport in Rare Earth Doped Epitaxial SrTiO3 Thin Films Mrs Proceedings. 433. DOI: 10.1557/Proc-433-21 |
0.416 |
|
| 1996 |
Yi G, Wessels BW. Deep Level Defects in Mg-Doped GaN Mrs Proceedings. 423. DOI: 10.1557/Proc-423-525 |
0.363 |
|
| 1996 |
Ford GM, Wessels BW. 1.54 μm Electroluminescence from Erbium Doped Gallium Phosphide Diodes Mrs Proceedings. 422. DOI: 10.1557/Proc-422-345 |
0.348 |
|
| 1996 |
Wessels BW. Rare-Earth Doped Epitaxial InGaP and its Optical Properties Mrs Proceedings. 422. DOI: 10.1557/Proc-422-247 |
0.321 |
|
| 1996 |
Gilbert SR, Wills LA, Wessels BW, Schindler JL, Thomas JA, Kannewurf CR. Electrical transport properties of epitaxial BaTiO3 thin films Journal of Applied Physics. 80: 969-977. DOI: 10.1063/1.362909 |
0.462 |
|
| 1996 |
Gill DM, Block BA, Conrad CW, Wessels BW, Ho ST. Thin film channel waveguides fabricated in metalorganic chemical vapor deposition grown BaTiO3 on MgO Applied Physics Letters. 69: 2968-2970. DOI: 10.1063/1.117746 |
0.375 |
|
| 1996 |
Chang K, Wessels BW, Studebaker D, Marks TJ. Epitaxial growth of (Sr1−xCax)CuO2 thin film with the infinite‐layer structure by metal‐organic chemical vapor deposition Applied Physics Letters. 69: 1951-1953. DOI: 10.1063/1.117632 |
0.46 |
|
| 1996 |
Yi G, Wessels BW. Compensation of n‐type GaN Applied Physics Letters. 69: 3028-3030. DOI: 10.1063/1.116828 |
0.34 |
|
| 1996 |
Nystrom MJ, Wessels BW, Chen J, Marks TJ. Microstructure of epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition Applied Physics Letters. 68: 761-763. DOI: 10.1063/1.116734 |
0.484 |
|
| 1996 |
Yi G, Wessels BW. Deep level defects in n‐type GaN compensated with Mg Applied Physics Letters. 68: 3769-3771. DOI: 10.1063/1.116001 |
0.388 |
|
| 1996 |
Ford GM, Wessels BW. Electroluminescence from forward‐biased Er‐doped GaP p‐n junctions at room temperature Applied Physics Letters. 68: 1126-1128. DOI: 10.1063/1.115734 |
0.339 |
|
| 1995 |
Yi GC, Wessels BW. Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy Materials Science Forum. 49-54. DOI: 10.4028/Www.Scientific.Net/Msf.196-201.49 |
0.335 |
|
| 1995 |
Block BA, Wessels BW. BaTiO3 Thin Films for Electro-optic and Non-linear Optical Applications Mrs Proceedings. 415. DOI: 10.1557/Proc-415-175 |
0.464 |
|
| 1995 |
Schindler JL, Dimeo F, Duran CR, Hinds BJ, Wessels BW, Marks TJ, Kannewurf CR. The Influence of Weak Links and Oxygen Deficiency on Electrical Properties of Bi-2212 and Ti-2212 Hts Thin Films Mrs Proceedings. 401. DOI: 10.1557/Proc-401-315 |
0.417 |
|
| 1995 |
Wessels BW, Nystrom MJ, Chen J, Studebaker D, Marks TJ. Epitaxial Niobate Thin Films and Their Nonlinear Optical Properties Mrs Proceedings. 401. DOI: 10.1557/Proc-401-211 |
0.45 |
|
| 1995 |
Chu DY, Wang XZ, Bi WG, Espindola RP, Wu SL, Wessels BW, Tu CW, Ho ST. Enhanced Photoluminescence from Erbium-Doped Gap Microdisk Resonator Mrs Proceedings. 392. DOI: 10.1557/Proc-392-229 |
0.442 |
|
| 1995 |
Nystrom MJ, Wessels BW, Chen J, Studebaker D, Marks TJ, Lin WP, Wong GK. Deposition of Potassium Niobate Thin Films by Metalorganic Chemical Vapor Deposition and their Nonlinear Optical Properties Mrs Proceedings. 392. DOI: 10.1557/Proc-392-183 |
0.481 |
|
| 1995 |
Wessels BW. Metal-Organic Chemical Vapor Deposition of Ferroelectric Oxide Thin Films for Electronic and Optical Applications Annual Review of Materials Science. 25: 525-546. DOI: 10.1146/Annurev.Ms.25.080195.002521 |
0.445 |
|
| 1995 |
Lee YC, Achenbach JD, Gilbert SR, Block BA, Wessels BW, Nystrom MJ. Line-Focus Acoustic Microscopy Measurements of Nb2O5/MgO and BaTiO3/LaAlO3 Thin-Film/Substrate Configurations Ieee Transactions On Ultrasonics, Ferroelectrics and Frequency Control. 42: 376-380. DOI: 10.1109/58.384445 |
0.377 |
|
| 1995 |
Block BA, Wessels BW. Batio3 thin films for optically active waveguides Integrated Ferroelectrics. 7: 25-31. DOI: 10.1080/10584589508220218 |
0.445 |
|
| 1995 |
Wang XZ, Wessels BW. Photoluminescent properties of Er‐doped GaP deposited on Si Applied Physics Letters. 67: 518-520. DOI: 10.1063/1.115174 |
0.411 |
|
| 1995 |
Nystrom MJ, Wessels BW, Studebaker DB, Marks TJ, Lin WP, Wong GK. Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition Applied Physics Letters. 67: 365-367. DOI: 10.1063/1.114630 |
0.474 |
|
| 1995 |
Gilbert SR, Wessels BW, Studebaker DB, Marks TJ. Epitaxial growth of SrTiO3 thin films by metalorganic chemical vapor deposition Applied Physics Letters. 66: 3298-3300. DOI: 10.1063/1.113736 |
0.471 |
|
| 1995 |
Chu DY, Ho ST, Wang XZ, Wessels BW, Bi WG, Tu CW, Espindola RP, Wu SL. Observation of enhanced photoluminescence in erbium‐doped semiconductor microdisk resonator Applied Physics Letters. 66: 2843-2845. DOI: 10.1063/1.113448 |
0.39 |
|
| 1995 |
Nystrom MJ, Wessels BW, Lin WP, Wong GK, Neumayer DA, Marks TJ. Nonlinear optical properties of textured strontium barium niobate thin films prepared by metalorganic chemical vapor deposition Applied Physics Letters. 66: 1726-1728. DOI: 10.1063/1.113347 |
0.485 |
|
| 1994 |
Dravid VP, Zhang H, Wills LA, Wessels BW. On the Microstructure, Chemistry, and Dielectric Function of BaTiO3MOCVD Thin Films Journal of Materials Research. 9: 426-430. DOI: 10.1557/Jmr.1994.0426 |
0.466 |
|
| 1994 |
Buyanova IA, Neuhalfen AJ, Wessels BW, Sheinkman MK. Symmetry of optically active Yb‐related centers in InP and In1−xGaxP (x≤0.13) Journal of Applied Physics. 76: 1180-1183. DOI: 10.1063/1.357843 |
0.332 |
|
| 1994 |
Block BA, Wessels BW. Photoluminescence properties of Er3+-doped BaTiO3 thin films Applied Physics Letters. 65: 25-27. DOI: 10.1063/1.113061 |
0.442 |
|
| 1994 |
Wang XZ, Wessels BW. Electroluminescence from Er‐doped GaP Applied Physics Letters. 65: 584-586. DOI: 10.1063/1.112985 |
0.354 |
|
| 1994 |
Wang XZ, Wessels BW. Thermal quenching properties of Er‐doped GaP Applied Physics Letters. 64: 1537-1539. DOI: 10.1063/1.111884 |
0.359 |
|
| 1994 |
Lu HA, Wills LA, Wessels BW. Electrical properties and poling of BaTiO3 thin films Applied Physics Letters. 64: 2973-2975. DOI: 10.1063/1.111375 |
0.477 |
|
| 1994 |
Wang XZ, Neuhalfen AJ, Wessels BW. Photoconductive properties of the Er‐doped InP Applied Physics Letters. 64: 466-468. DOI: 10.1063/1.111131 |
0.308 |
|
| 1993 |
Gilbert SR, Wessels BW, Neumayer DA, Marks TJ, Schindler JL, Kannewurf CR. Preparation of Ba1−xSrxTiO3 Thin Films by Metalorganic Chemical Vapor Deposition and Their Properties Mrs Proceedings. 335. DOI: 10.1557/Proc-335-41 |
0.473 |
|
| 1993 |
Dimeo F, Wessels BW, Neumayer DA, Marks TJ, Schindler JL, Kannewurf CR. In Situ Heteroepitaxial Bi2Sr2CaCu2O8 Thin Films Prepared by Metalorganic Chemical Vapor Deposition Mrs Proceedings. 335. DOI: 10.1557/Proc-335-285 |
0.475 |
|
| 1993 |
Wills L, Wessels B. The Defect Structure of BaTiO3 Thin Films Mrs Proceedings. 310. DOI: 10.1557/Proc-310-409 |
0.372 |
|
| 1993 |
Lu HA, Wills LA, Wessels BW, Zhan X, Helfrich JA, Ketuerson JB. Ferroelectric Properties of a-Axis Textured BaTiO3 Thin Films Mrs Proceedings. 310. DOI: 10.1557/Proc-310-319 |
0.467 |
|
| 1993 |
Feil WA, Wessels BW. Defect structure of strontium titanate thin films Journal of Applied Physics. 74: 3927-3931. DOI: 10.1063/1.354492 |
0.478 |
|
| 1993 |
Lu HA, Chen J, Wessels BW, Schulz DL, Marks TJ. Weak links and critical current density in Bi2Sr2CaCu2Oxthin films Journal of Applied Physics. 73: 3886-3889. DOI: 10.1063/1.352875 |
0.453 |
|
| 1993 |
Chen J, Lu HA, Dimeo F, Wessels BW, Schulz DL, Marks TJ, Schindler JL, Kannewurf CR. Solid phase epitaxy of Bi2Sr2CaCu2O x superconducting thin films Journal of Applied Physics. 73: 4080-4082. DOI: 10.1063/1.352834 |
0.502 |
|
| 1993 |
Qian LQ, Wessels BW. Strained‐layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy Applied Physics Letters. 63: 628-630. DOI: 10.1063/1.109971 |
0.321 |
|
| 1993 |
Lu HA, Wills LA, Wessels BW, Lin WP, Wong GK. Electronic beam induced poling of BaTiO3 thin films Applied Physics Letters. 63: 874-876. DOI: 10.1063/1.109886 |
0.383 |
|
| 1993 |
Lu HA, Wills LA, Wessels BW, Lin WP, Zhang TG, Wong GK, Neumayer DA, Marks TJ. Second-harmonic generation of poled BaTiO3 thin films Applied Physics Letters. 62: 1314-1316. DOI: 10.1063/1.108716 |
0.456 |
|
| 1993 |
Lu HA, Wills LA, Wessels BW, Lin WP, Wong GK. Second harmonic generation and crystalline structure of corona poled BaTiO3 thin films Optical Materials. 2: 169-173. DOI: 10.1016/0925-3467(93)90009-P |
0.369 |
|
| 1993 |
Chen J, Wills LA, Wessels BW, Schulz DL, Marks TJ. Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3 Journal of Electronic Materials. 22: 701-703. DOI: 10.1007/Bf02666421 |
0.473 |
|
| 1992 |
Chen J, Lu HA, DiMeo F, Wessels BW, Schulz DL, Marks TJ, Schindler JL, Kannewurf CR. Heteroepitaxial Bi2Sr2CaCu2Ox Superconducting thin films Deposited on LaA1O3 by Solid Phase Epitaxy and OMCVD Mrs Proceedings. 275. DOI: 10.1557/Proc-275-443 |
0.48 |
|
| 1992 |
Wessels BW. Scanning tunneling optical spectroscopy of semiconductor thin films and quantum wells Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10: 1803. DOI: 10.1116/1.586203 |
0.347 |
|
| 1992 |
Zhang JM, DiMeo F, Wessels BW, Schulz DL, Marks TJ, Schindler JL, Kannewurf CR. A new route to high-Tc superconducting Bi-Sr-Ca-Cu-O thin films: Improved deposition efficiency and film morphology using ammonia-argon mixtures as the carrier gas Journal of Applied Physics. 71: 2769-2771. DOI: 10.1063/1.351052 |
0.425 |
|
| 1992 |
Neuhalfen AJ, Wessels BW. Electronic and photoluminescent properties of InP prepared by flow modulation epitaxy Journal of Applied Physics. 71: 281-288. DOI: 10.1063/1.350701 |
0.351 |
|
| 1992 |
Wills LA, Wessels BW, Richeson DS, Marks TJ. Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition Applied Physics Letters. 60: 41-43. DOI: 10.1063/1.107359 |
0.458 |
|
| 1991 |
Wills L, Wessels B, Schulz D, Marks T. BaTiO3 Thin Films Prepared by Organometallic Chemical Vapor Deposition Mrs Proceedings. 243. DOI: 10.1557/Proc-243-217 |
0.477 |
|
| 1991 |
Schneider RP, Wessels BW. Optical properties of InAs/InP strained single quantum wells grown by organometallic vapor‐phase epitaxy Journal of Applied Physics. 70: 405-408. DOI: 10.1063/1.350289 |
0.34 |
|
| 1991 |
Zhang JM, Wessels BW, Richeson DS, Marks TJ, Degroot DC, Kannewurf CR. Preparation of high-Tc superconducting Bi-Sr-Ca-Cu-O films by organometallic chemical vapor deposition using second-generation fluorocarbon-based precursors Journal of Applied Physics. 69: 2743-2745. DOI: 10.1063/1.348631 |
0.449 |
|
| 1991 |
Neuhalfen AJ, Wessels BW. Photoluminescent properties of Er‐doped In1−xGaxP prepared by metalorganic vapor phase epitaxy Applied Physics Letters. 59: 2317-2319. DOI: 10.1063/1.106055 |
0.305 |
|
| 1991 |
Qian LQ, Wessels BW. Scanning tunneling optical spectroscopy of semiconductor quantum well structures Applied Physics Letters. 58: 2538-2539. DOI: 10.1063/1.104819 |
0.347 |
|
| 1991 |
Zhao J, Li YQ, Chern CS, Norris P, Gallois B, Kear B, Wessels BW. Superconducting YBa2Cu3O7−xthin films on silver substrates byinsituplasma‐enhanced metalorganic chemical vapor deposition Applied Physics Letters. 58: 89-91. DOI: 10.1063/1.104400 |
0.374 |
|
| 1991 |
Qian LQ, Wessels BW. Scanning tunneling optical spectroscopy of semiconductors Applied Physics Letters. 58: 1295-1296. DOI: 10.1063/1.104340 |
0.35 |
|
| 1991 |
Wills LA, Feil WA, Wessels BW, Tonge LM, Marks TJ. Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition Journal of Crystal Growth. 107: 712-715. DOI: 10.1016/0022-0248(91)90547-I |
0.397 |
|
| 1991 |
Zhang JM, Wessels BW, Richeson DS, Marks TJ. Preparation and properties of superconducting Bi-Sr-Ca-Cu-O thin films on polycristalline silver substrates by organometallic chemical vapor deposition Journal of Crystal Growth. 107: 705-709. DOI: 10.1016/0022-0248(91)90545-G |
0.416 |
|
| 1991 |
Schneider RP, Wessels BW. Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells Journal of Electronic Materials. 20: 1117-1123. DOI: 10.1007/Bf03030218 |
0.353 |
|
| 1991 |
Wessels BW, Zhang JM, DiMeo F, Richeson DS, Marks TJ, DeGroot DC, Kannewurf CR. Microstructure and superconducting properties of BiSrCaCuO thin films Proceedings of Spie - the International Society For Optical Engineering. 1394: 232-237. |
0.352 |
|
| 1990 |
Sun SW, Wessels BW. Compensation in Ge‐doped InP Journal of Applied Physics. 68: 606-609. DOI: 10.1063/1.346786 |
0.375 |
|
| 1990 |
Thangaraj N, Wessels BW. Electron‐beam‐enhanced oxidation processes in II‐VI compound semiconductors observed by high‐resolution electron microscopy Journal of Applied Physics. 67: 1535-1541. DOI: 10.1063/1.346098 |
0.325 |
|
| 1990 |
Huang K, Wessels BW. Deep‐level properties of Mn in InP Journal of Applied Physics. 67: 6882-6885. DOI: 10.1063/1.345079 |
0.356 |
|
| 1990 |
Feil WA, Wessels BW, Tonge LM, Marks TJ. Organometallic chemical vapor deposition of strontium titanate Journal of Applied Physics. 67: 3858-3861. DOI: 10.1063/1.345034 |
0.433 |
|
| 1990 |
Schneider RP, Wessels BW. InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy Applied Physics Letters. 57: 1998-2000. DOI: 10.1063/1.103989 |
0.306 |
|
| 1990 |
Williams DM, Wessels BW. Yb‐doped InP grown by metalorganic vapor phase epitaxy using a beta‐diketonate precursor Applied Physics Letters. 56: 566-568. DOI: 10.1063/1.102746 |
0.354 |
|
| 1990 |
Zhang JM, Wessels BW, Tonge LM, Marks TJ. Formation of oriented highTcsuperconducting Bi‐Sr‐Ca‐Cu‐O thin films on silver substrates by organometallic chemical vapor deposition Applied Physics Letters. 56: 976-978. DOI: 10.1063/1.102597 |
0.452 |
|
| 1990 |
Zhao J, Marcy HO, Tonge LM, Wessels BW, Marks TJ, Kannewurf CR. Deposition of high-Tc superconducting Y-Ba-Cu-O thin films at low temperatures using a plasma-enhanced organometallic chemical vapor deposition approach Solid State Communications. 74: 1091-1094. DOI: 10.1016/0038-1098(90)90716-O |
0.43 |
|
| 1989 |
Richesonw DS, Tonge LM, Zhao J, Zhang J, Marcy HO, Marks TJ, Wessels BW, Kannewurfcc'd CR. Routes to High‐Tc Superconducting Tl‐Ba‐Ca‐Cu‐O Films Using Organometallic Chemical Vapor Deposition Mrs Proceedings. 169. DOI: 10.1557/Proc-169-623 |
0.429 |
|
| 1989 |
Zhang JM, Marcy HO, Tonge L., Wessels BW, Marks TJ, Kannewurf CR. High‐Tc Undoped and Pb‐Doped BI‐SR‐CA‐CU‐O thin Films Prepared by Organometallic Chemical Vapor Deposition Mrs Proceedings. 169. DOI: 10.1557/Proc-169-607 |
0.439 |
|
| 1989 |
Zhao J, Marcy HO, Tonge LM, Wessels BW, Marks TJ, Kannewurf CR. Low Temperature Preparation of Y‐Ba‐Cu‐0 High Tc Superconducting Thin Films by Plasma‐Enhanced Organometallic Chemical Vapor Deposition Mrs Proceedings. 169. DOI: 10.1557/Proc-169-593 |
0.41 |
|
| 1989 |
Feil WA, Wessels BW, Tonge LM, Marks TJ. Organometallic Chemical Vapor Deposition of Strontium Titanate thin Films Mrs Proceedings. 168. DOI: 10.1557/Proc-168-375 |
0.461 |
|
| 1989 |
Pan H, Wessels BW. Nitrogen Doping of ZnO Prepared by Organometallic Chemical Vapor Deposition Mrs Proceedings. 152. DOI: 10.1557/Proc-152-215 |
0.445 |
|
| 1989 |
Zhang JM, Marcy HO, Tonge LM, Wessels BW, Marks TJ, Kannewurf CR. Organometallic chemical vapor deposition of superconducting, high T c Pb-doped Bi-Sr-Ca-Cu-O thin films Applied Physics Letters. 55: 1906-1908. DOI: 10.1063/1.102330 |
0.442 |
|
| 1989 |
Richeson DS, Tonge LM, Zhao J, Zhang J, Marcy HO, Marks TJ, Wessels BW, Kannewurf CR. Organometallic chemical vapor deposition routes to high Tc superconducting Tl-Ba-Ca-Cu-O films Applied Physics Letters. 54: 2154-2156. DOI: 10.1063/1.101515 |
0.436 |
|
| 1989 |
Zhang J, Zhao J, Marcy HO, Tonge LM, Wessels BW, Marks TJ, Kannewurf CR. Organometallic chemical vapor deposition of high Tc superconducting Bi-Sr-Ca-Cu-O films Applied Physics Letters. 54: 1166-1168. DOI: 10.1063/1.101481 |
0.425 |
|
| 1989 |
Zhao J, Marcy HO, Tonge LM, Wessels BW, Marks TJ, Kannewurf CR. Rapid thermal annealing of YBa2Cu3O7-δ films prepared by OMCVD using a highly volatile fluorocarbon-based precusor Physica C: Superconductivity and Its Applications. 159: 710-714. DOI: 10.1016/0921-4534(89)91308-7 |
0.482 |
|
| 1989 |
Schneider R, Wessels B. Optical properties of and strained-layer superlattices and heterostructures Superlattices and Microstructures. 6: 287-292. DOI: 10.1016/0749-6036(89)90171-7 |
0.335 |
|
| 1989 |
Zhao J, Dahmen KH, Marcy HO, Tonge LM, Wessels BW, Marks TJ, Kannewurf CR. Low pressure organometallic chemical vapor deposition of high-Tc superconducting YBa2Cu3O7-δ films Solid State Communications. 69: 187-189. DOI: 10.1016/0038-1098(89)90389-X |
0.448 |
|
| 1988 |
Souletie P, Wessels BW. Growth kinetics of ZnO prepared by organometallic chemical vapor deposition Journal of Materials Research. 3: 740-744. DOI: 10.1557/Jmr.1988.0740 |
0.368 |
|
| 1988 |
Huang K, Wessels BW. Characterization of Mn‐doped InAsxP1−xgrown by organometallic vapor phase epitaxy Applied Physics Letters. 52: 1155-1157. DOI: 10.1063/1.99190 |
0.349 |
|
| 1988 |
Bethke S, Pan H, Wessels BW. Luminescence of heteroepitaxial zinc oxide Applied Physics Letters. 52: 138-140. DOI: 10.1063/1.99030 |
0.33 |
|
| 1988 |
Huang K, Wessels BW. Electronic and optical properties of deep levels in iron‐doped InAsP alloys Journal of Applied Physics. 64: 6770-6774. DOI: 10.1063/1.342511 |
0.318 |
|
| 1988 |
Zhao J, Dahmen KH, Marcy HO, Tonge LM, Marks TJ, Wessels BW, Kannewurf CR. Organometallic chemical vapor deposition of high Tc superconducting films using a volatile, fluorocarbon-based precursor Applied Physics Letters. 53: 1750-1752. DOI: 10.1063/1.100473 |
0.466 |
|
| 1988 |
Wang P, Wessels B. Electronic properties of strained-layer superlattices prepared by hydride vapor phase epitaxy Superlattices and Microstructures. 4: 251-256. DOI: 10.1016/0749-6036(88)90161-9 |
0.394 |
|
| 1988 |
Yang B, Zhang J, Wessels BW. Photo-and electroluminescence of ZnSe grown by OMVPE Journal of Luminescence. 804-805. DOI: 10.1016/0022-2313(88)90446-2 |
0.354 |
|
| 1988 |
Potts J, Smith T, Cheng H, Yang B, Wessels B. Electron-beam-pumped lasing in epitaxial ZnSe thin films Journal of Crystal Growth. 86: 935-941. DOI: 10.1016/0022-0248(90)90828-9 |
0.504 |
|
| 1988 |
Souletie P, Bethke S, Wessels B, Pan H. Growth and characterization of heteroepitaxial ZnO thin films by organometallic chemical vapor deposition Journal of Crystal Growth. 86: 248-251. DOI: 10.1016/0022-0248(90)90724-Y |
0.453 |
|
| 1988 |
Huang K, Wessels B. Growth and properties of InAsP alloys prepared by organometallic vapor phase epitaxy Journal of Crystal Growth. 92: 547-552. DOI: 10.1016/0022-0248(88)90040-1 |
0.368 |
|
| 1987 |
Bethke S, Pan H, Wessels BW. Photoluminescent Properties of ZnO Layers Prepared by Organometallic Chemical Vapor Deposition Mrs Proceedings. 102. DOI: 10.1557/Proc-102-149 |
0.316 |
|
| 1987 |
Huang K, Wessels BW. Epitaxial growth of manganese-doped indium phosphide Journal of Materials Science Letters. 6: 1310-1312. DOI: 10.1007/Bf01794600 |
0.313 |
|
| 1986 |
Wang PJ, Wessels BW. Vapor phase epitaxy of InP using flow modulation Applied Physics Letters. 49: 564-566. DOI: 10.1063/1.97096 |
0.331 |
|
| 1986 |
Huang K, Wessels BW. Electronic and optical properties of Fe‐doped InP prepared by organometallic vapor‐phase epitaxy Journal of Applied Physics. 60: 4342-4344. DOI: 10.1063/1.337432 |
0.415 |
|
| 1985 |
Sun SW, Wessels BW. Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia Journal of Applied Physics. 57: 4616-4618. DOI: 10.1063/1.335369 |
0.332 |
|
| 1985 |
Bawolek E, Wessels B. Electrical properties of n-n ZnSe/GaAs heterojunctions Thin Solid Films. 131: 173-183. DOI: 10.1016/0040-6090(85)90138-5 |
0.3 |
|
| 1982 |
Leigh W, Wessels BW. High conductivity zinc sulfoselenide thin films Applied Physics Letters. 41: 165-167. DOI: 10.1063/1.93440 |
0.473 |
|
| 1982 |
Leigh WB, Wessels BW. Vapor growth and properties of thin film ZnSxSe1−x Thin Solid Films. 97: 221-229. DOI: 10.1016/0040-6090(82)90456-4 |
0.409 |
|
| 1982 |
Besomi P, Christianson K, Wessels BW. Photovoltaic properties of ZnSe{plus 45 degree rule}GaAs heterojunctions Thin Solid Films. 87: 113-118. DOI: 10.1016/0040-6090(82)90265-6 |
0.362 |
|
| 1980 |
Besomi P, Wessels BW. High‐conductivity heteroepitaxial ZnSe films Applied Physics Letters. 37: 955-957. DOI: 10.1063/1.91774 |
0.339 |
|
| 1980 |
Besomi P, Wessels BW. Deep level defects in CdS/GaAs heterojunctions Thin Solid Films. 71: 33-39. DOI: 10.1016/0040-6090(80)90180-7 |
0.307 |
|
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