Year |
Citation |
Score |
2009 |
Zheng J, Modi M, Ginga N, Sitaraman S. Silicon and nanoscale metal interface characterization using stress-engineered superlayer test methods Ieee Transactions On Components and Packaging Technologies. 32: 333-338. DOI: 10.1109/Tcapt.2009.2021699 |
0.633 |
|
2009 |
Modi MB, Ginga N, Sitaraman SK. Microcontact spring reliability: Design against interfacial fracture Ieee Transactions On Components and Packaging Technologies. 32: 197-206. DOI: 10.1109/TCAPT.2008.2010131 |
0.496 |
|
2004 |
Modi M, Sitaraman SK. Interfacial fracture toughness measurement of a Ti/Si interface Journal of Electronic Packaging, Transactions of the Asme. 126: 301-307. DOI: 10.1115/1.1772410 |
0.69 |
|
2004 |
Modi MB, Sitaraman SK. Single-sample decohesion test: Mechanics and implementataion International Journal of Fracture. 129: 1-20. DOI: 10.1023/B:Frac.0000038907.94272.E5 |
0.669 |
|
2004 |
Modi MB, Sitaraman SK. Interfacial fracture toughness measurement for thin film interfaces Engineering Fracture Mechanics. 71: 1219-1234. DOI: 10.1016/S0013-7944(03)00210-8 |
0.711 |
|
2003 |
Modi MB, Sitaraman SK. Single-substrate decohesion test (SSDT) for interfacial fracture toughness measurement Proceedings of 5th Electronics Packaging Technology Conference, Eptc 2003. 456-461. DOI: 10.1109/EPTC.2003.1271565 |
0.693 |
|
2003 |
Modi MB, Sitaraman SK. Measurement of the mode mix dependent interfacial fracture toughness for a Ti/Si interface using a modified decohesion test Advances in Electronic Packaging. 1: 559-573. |
0.702 |
|
2002 |
Modi MB, Sitaraman SK. Modified decohesion test (MDT) for interfacial fracture toughness measurement in microelectronic/MEMS applications Asme International Mechanical Engineering Congress and Exposition, Proceedings. 277-282. DOI: 10.1115/IMECE2002-39670 |
0.651 |
|
2000 |
Fork DK, Chua C, Kim P, Romano L, Lau R, Wong L, Alimonda AS, Geluz V, Teepe M, Haemer J, Modi M, Zhu QA, Ma D, Sitaraman S, Smith DL, et al. Nano-spring arrays for high-density interconnect Proceedings of Spie. 4176: 226-235. DOI: 10.1117/12.395634 |
0.498 |
|
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