| Year |
Citation |
Score |
| 2007 |
Kuang W, Xiao E, Ibarra CM, Zhao P. Design asynchronous circuits for soft error tolerance Proceedings 2007 Ieee International Conference On Integrated Circuit Design and Technology, Icicdt. 221-225. DOI: 10.1109/ICICDT.2007.4299578 |
0.307 |
|
| 2006 |
Yu C, Yuan JS, Shen J, Xiao E. Study of electrical stress effect on SiGe HBT low-noise amplifier performance by simulation Ieee Transactions On Device and Materials Reliability. 6: 550-554. DOI: 10.1109/Tdmr.2006.887464 |
0.656 |
|
| 2006 |
Yu C, Yuan JS, Xiao E. Dynamic voltage stress effects on nMOS varactor Microelectronics Reliability. 46: 1812-1816. DOI: 10.1016/J.Microrel.2006.07.075 |
0.622 |
|
| 2005 |
Xiao E, Ghosh PP. Stress induced performance degradation in LC oscillators Proceedings of the Ieee International Frequency Control Symposium and Exposition. 2005: 559-561. DOI: 10.1109/FREQ.2005.1573993 |
0.431 |
|
| 2005 |
Yu C, Xiao E, Yuan JS. Voltage stress-induced hot carrier effects on SiGe HBT VCO Microelectronics Reliability. 45: 1402-1405. DOI: 10.1016/J.Microrel.2005.07.026 |
0.664 |
|
| 2005 |
Xiao E, Ghosh PP, Yu C, Yuan JS. Hot carrier and soft breakdown effects on LNA performance for ultra wideband communications Microelectronics Reliability. 45: 1382-1385. DOI: 10.1016/J.Microrel.2005.07.025 |
0.625 |
|
| 2005 |
Xiao E, Zhu P, Yuan JS, Yu C. Analysis and modeling of LNA circuit reliability Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 69-72. |
0.472 |
|
| 2005 |
Xiao E. Hot carrier effect on CMOS RF amplifiers Ieee International Reliability Physics Symposium Proceedings. 680-681. |
0.384 |
|
| 2004 |
Xiao E, Yuan JS, Yang H. CMOS RF and DC Reliability Subject to Hot Carrier Stress and Oxide Soft Breakdown Ieee Transactions On Device and Materials Reliability. 4: 92-98. DOI: 10.1109/Tdmr.2004.824365 |
0.618 |
|
| 2003 |
Yang H, Yuan JS, Liu Y, Xiao E. Effect of gate-oxide breakdown on rf performance Ieee Transactions On Device and Materials Reliability. 3: 93-97. DOI: 10.1109/Tdmr.2003.816656 |
0.468 |
|
| 2003 |
Yang H, Yuan JS, Xiao E. Effect of gate oxide breakdown on RF device and circuit performance Ieee International Reliability Physics Symposium Proceedings. 2003: 1-4. DOI: 10.1109/RELPHY.2003.1197711 |
0.423 |
|
| 2003 |
Xiao E. A design technique to reduce hot carrier effect Ieee International Integrated Reliability Workshop Final Report. 2003: 122-123. DOI: 10.1109/IRWS.2003.1283316 |
0.371 |
|
| 2003 |
Xiao E, Yuan JS. RF circuit design in reliability Ieee Mtt-S International Microwave Symposium Digest. 1. |
0.64 |
|
| 2003 |
Sadat A, Yang H, Xiao E, Yuan JS. Breakdown Effects on MOS Varactors and VCO's Proceedings of the Annual Ieee International Frequency Control Symposium. 556-559. |
0.442 |
|
| 2003 |
Xiao E, Yuan JS. RF circuit design in reliability Ieee Mtt-S International Microwave Symposium Digest. 1. |
0.64 |
|
| 2003 |
Xiao E, Yuan JS. Evaluation of oscillator phase noise subject to reliability Proceedings of the Annual Ieee International Frequency Control Symposium. 565-568. |
0.585 |
|
| 2002 |
Xiao E, Yuan JS, Yang H. Hot-carrier and soft-breakdown effects on VCO performance Ieee Transactions On Microwave Theory and Techniques. 50: 2453-2458. DOI: 10.1109/TMTT.2002.804632 |
0.47 |
|
| 2002 |
Xiao E, Yuan JS, Yang H. Hot carrier and soft breakdown reliability for RF circuits Ieee International Conference On Semiconductor Electronics, Proceedings, Icse. 243-246. |
0.449 |
|
| 2002 |
Xiao E, Yuan JS. RF circuit performance degradation due to hot carrier effects and soft breakdown Midwest Symposium On Circuits and Systems. 1. |
0.649 |
|
| 2002 |
Xiao E, Yuan JS. Hot carrier and soft breakdown effects on VCO performance Ieee Mtt-S International Microwave Symposium Digest. 1: 569-572. |
0.597 |
|
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