Wanxue Zeng, Ph.D. - Publications
Affiliations: | 2004 | State University of New York, Albany, Albany, NY, United States |
Area:
Materials Science Engineering, Chemical EngineeringYear | Citation | Score | |||
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2008 | Consiglio S, Zeng W, Berliner N, Eisenbraun ET. Plasma-assisted atomic layer deposition of conductive hafnium nitride using tetrakis(ethylmethylamino)hafnium for CMOS gate electrode applications Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2827995 | 0.309 | |||
2004 | Zeng W, Eisenbraun E, Frisch H, Sullivan JJ, Kaloyeros AE, Margalit J, Beck K. CVD of tantalum oxide dielectric thin films for nanoscale device applications Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1766312 | 0.516 | |||
2000 | Eisenbraun E, Upham A, Dash R, Zeng W, Hoefnagels J, Lane S, Anjum D, Dovidenko K, Kaloyeros A, Arkles B, Sullivan JJ. Low temperature inorganic chemical vapor deposition of Ti-Si-N diffusion barrier liners for gigascale copper interconnect applications Journal of Vacuum Science & Technology B. 18: 2011-2015. DOI: 10.1116/1.1306304 | 0.568 | |||
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