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Hugh J. Barnaby - Publications

Affiliations: 
2001- Electrical Engineering Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering, Radiation Physics
Website:
https://search.asu.edu/profile/749233
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139 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Privat A, Davis PW, Barnaby HJ, Adell PC. Total Dose Effects on Negative and Positive Low-Dropout Linear Regulators Ieee Transactions On Nuclear Science. 67: 1332-1338. DOI: 10.1109/Tns.2020.2977296  0.431
2020 Muthuseenu K, Barnaby H, Patadia A, Holbert K, Privat A. Ionizing radiation tolerance of stacked Si3N4-SiO2 gate insulators for power MOSFETs Microelectronics Reliability. 104: 113554. DOI: 10.1016/J.Microrel.2019.113554  0.493
2019 Huang X, Fang R, Yang C, Fu K, Fu H, Chen H, Yang T, Zhou J, Montes J, Kozicki MN, Barnaby H, Zhang B, Zhao Y. Steep-Slope Field-Effect Transistors with AlGaN/GaN HEMT and Oxide based Threshold Switching Device. Nanotechnology. PMID 30721888 DOI: 10.1088/1361-6528/Ab0484  0.439
2019 Witulski AF, Mahadevan N, Kauppila J, Karsai G, Sternberg A, Schrimpf RD, Reed RA, Adell P, Schone H, Daniel A, Privat A, Barnaby H. Simulation of Transistor-Level Radiation Effects on System-Level Performance Parameters Ieee Transactions On Nuclear Science. 66: 1634-1641. DOI: 10.1109/Tns.2019.2922903  0.702
2019 Privat A, Barnaby HJ, Adell PC, Tolleson BS, Wang Y, Han X, Davis P, Rax BR, Buchheit TE. Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies Ieee Transactions On Nuclear Science. 66: 190-198. DOI: 10.1109/Tns.2018.2887235  0.501
2019 Ye Z, Liu R, Taggart JL, Barnaby HJ, Yu S. Evaluation of Radiation Effects in RRAM-Based Neuromorphic Computing System for Inference Ieee Transactions On Nuclear Science. 66: 97-103. DOI: 10.1109/Tns.2018.2886793  0.508
2019 Jacobs-Gedrim RB, Hughart DR, Agarwal S, Vizkelethy G, Bielejec ES, Vaandrager BL, Swanson SE, Knisely KE, Taggart JL, Barnaby HJ, Marinella MJ. Training a Neural Network on Analog TaOx ReRAM Devices Irradiated With Heavy Ions: Effects on Classification Accuracy Demonstrated With CrossSim Ieee Transactions On Nuclear Science. 66: 54-60. DOI: 10.1109/Tns.2018.2886229  0.776
2019 Taggart JL, Jacobs-Gedrim RB, McLain ML, Barnaby HJ, Bielejec ES, Hardy W, Marinella MJ, Kozicki MN, Holbert K. Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects Ieee Transactions On Nuclear Science. 66: 69-76. DOI: 10.1109/Tns.2018.2882529  0.402
2019 Yin S, Seo J, Kim Y, Han X, Barnaby H, Yu S, Luo Y, He W, Sun X, Kim J. Monolithically Integrated RRAM- and CMOS-Based In-Memory Computing Optimizations for Efficient Deep Learning Ieee Micro. 39: 54-63. DOI: 10.1109/Mm.2019.2943047  0.374
2019 Livingston IP, Esqueda IS, Barnaby HJ. Explicit approximation of the surface potential equation of a dynamically depleted silicon-on-insulator MOSFET for performance and reliability simulations Solid-State Electronics. 160: 107609. DOI: 10.1016/J.Sse.2019.05.005  0.441
2018 Gonzalez-Velo Y, Patadia A, Barnaby HJ, Kozicki MN. Impact of radiation induced crystallization on programmable metallization cell electrical characteristics and reliability. Faraday Discussions. PMID 30417185 DOI: 10.1039/C8Fd00125A  0.398
2018 Li X, Yang J, Fleetwood DM, Liu C, Wei Y, Barnaby HJ, Galloway KF. Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors Ieee Transactions On Nuclear Science. 65: 1271-1276. DOI: 10.1109/Tns.2018.2837032  0.426
2018 Tolleson BS, Adell PC, Rax B, Barnaby HJ, Privat A, Han X, Mahmud A, Livingston I. Improved Model for Excess Base Current in Irradiated Lateral p-n-p Bipolar Junction Transistors Ieee Transactions On Nuclear Science. 65: 1488-1495. DOI: 10.1109/Tns.2018.2829110  0.42
2018 Taggart JL, Chen W, Gonzalez-Velo Y, Barnaby HJ, Holbert K, Kozicki MN. In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment Ieee Transactions On Nuclear Science. 65: 192-199. DOI: 10.1109/Tns.2017.2779860  0.409
2018 Yan X, Wang H, Barnaby H, Sanchez Esqueda I. Impact Ionization and Interface Trap Generation in 28-nm MOSFETs at Cryogenic Temperatures Ieee Transactions On Device and Materials Reliability. 18: 456-462. DOI: 10.1109/Tdmr.2018.2865190  0.358
2018 Fang R, Livingston I, Esqueda IS, Kozicki M, Barnaby H. Bias temperature instability model using dynamic defect potential for predicting CMOS aging Journal of Applied Physics. 123: 225701. DOI: 10.1063/1.5027856  0.425
2017 McLain ML, Barnaby HJ, Schlenvogt G. Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs Ieee Transactions On Nuclear Science. 64: 2235-2241. DOI: 10.1109/Tns.2017.2705118  0.787
2017 Li X, Yang J, Barnaby HJ, Galloway KF, Schrimpf RD, Fleetwood DM, Liu C. Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration Ieee Transactions On Nuclear Science. 64: 1549-1553. DOI: 10.1109/Tns.2017.2703310  0.405
2017 Chen W, Fang R, Barnaby HJ, Balaban MB, Gonzalez-Velo Y, Taggart JL, Mahmud A, Holbert K, Edwards AH, Kozicki MN. Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors Ieee Transactions On Nuclear Science. 64: 269-276. DOI: 10.1109/Tns.2016.2618359  0.435
2017 Barnaby HJ, Schrimpf RD, Galloway KF, Li X, Yang J, Liu C. Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt Ieee Transactions On Nuclear Science. 64: 149-155. DOI: 10.1109/Tns.2016.2615628  0.625
2017 Gonzalez-Velo Y, Barnaby HJ, Kozicki MN. Review of radiation effects on ReRAM devices and technology Semiconductor Science and Technology. 32: 083002. DOI: 10.1088/1361-6641/Aa6124  0.443
2017 Chen W, Tappertzhofen S, Barnaby HJ, Kozicki MN. SiO2 based conductive bridging random access memory Journal of Electroceramics. 39: 109-131. DOI: 10.1007/S10832-017-0070-5  0.404
2016 Chen W, Fang R, Balaban MB, Yu W, Gonzalez-Velo Y, Barnaby HJ, Kozicki MN. A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells. Nanotechnology. 27: 255202. PMID 27171505 DOI: 10.1088/0957-4484/27/25/255202  0.363
2016 Wolf K, Ailavajhala MS, Tenne DA, Barnaby H, Kozicki MN, Mitkova M. Electron beam effects in Ge–Se thin films and resistance change memory devices Emerging Materials Research. 5: 126-134. DOI: 10.1680/Jemmr.15.00042  0.362
2016 Gonzalez-Velo Y, Mahmud A, Chen W, Taggart JL, Barnaby HJ, Kozicki MN, Ailavajhala M, Holbert KE, Mitkova M. Radiation hardening by process of CBRAM resistance switching cells Ieee Transactions On Nuclear Science. 63: 2145-2151. DOI: 10.1109/Tns.2016.2569076  0.419
2016 Mahmud A, Gonzalez-Velo Y, Saremi M, Barnaby HJ, Kozicki MN, Holbert KE, Mitkova M, Alford TL, Goryll M, Yu W, Mahalanabis D, Chen W, Chamele N, Taggart J. Flexible Ag-ChG Radiation Sensors: Limit of Detection and Dynamic Range Optimization Through Physical Design Tuning Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2016.2555920  0.311
2016 Saremi M, Privat A, Barnaby HJ, Clark LT. Physically Based Predictive Model for Single Event Transients in CMOS Gates Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2547423  0.407
2016 Chen W, Barnaby HJ, Kozicki MN. Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2 Switching Layer Ieee Electron Device Letters. 37: 576-579. DOI: 10.1109/Led.2016.2542239  0.42
2016 Liu R, Barnaby HJ, Yu S. System-level analysis of single event upset susceptibility in RRAM architectures Semiconductor Science and Technology. 31: 124005. DOI: 10.1088/0268-1242/31/12/124005  0.318
2016 Kozicki MN, Barnaby HJ. Conductive bridging random access memory—materials, devices and applications Semiconductor Science and Technology. 31: 113001. DOI: 10.1088/0268-1242/31/11/113001  0.338
2015 Saremi M, Barnaby HJ, Edwards A, Kozicki MN. Analytical relationship between anion formation and carrier-trap statistics in chalcogenide glass films Ecs Electrochemistry Letters. 4: H29-H31. DOI: 10.1149/2.0061507Eel  0.317
2015 Adell PC, Rax B, Esqueda IS, Barnaby HJ. Hydrogen Limits for Total Dose and Dose Rate Response in Linear Bipolar Circuits Ieee Transactions On Nuclear Science. 62: 2476-2481. DOI: 10.1109/Tns.2015.2500198  0.72
2015 Chen W, Barnaby HJ, Kozicki MN, Edwards AH, Gonzalez-Velo Y, Fang R, Holbert KE, Yu S, Yu W. A Study of Gamma-Ray Exposure of Cu–SiO 2 Programmable Metallization Cells Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2478883  0.456
2015 Liu R, Mahalanabis D, Barnaby HJ, Yu S. Investigation of Single-Bit and Multiple-Bit Upsets in Oxide RRAM-Based 1T1R and Crossbar Memory Arrays Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2465164  0.427
2015 Fleetwood D, Brown D, Girard S, Gouker P, Gerardin S, Quinn H, Barnaby H. 2015 Special Issue of the IEEE Transactions on Nuclear Science Modeling and Simulation of Radiation Effects Editor Comments Ieee Transactions On Nuclear Science. 62: 1439. DOI: 10.1109/Tns.2015.2462231  0.42
2015 Barnaby HJ, Vermeire B, Campola MJ. Improved Model for Increased Surface Recombination Current in Irradiated Bipolar Junction Transistors Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2452229  0.436
2015 Sanchez Esqueda I, Barnaby HJ, King MP. Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2414426  0.825
2015 Mahalanabis D, Bharadwaj V, Barnaby HJ, Vrudhula S, Kozicki MN. A nonvolatile sense amplifier flip-flop using programmable metallization cells Ieee Journal On Emerging and Selected Topics in Circuits and Systems. 5: 205-213. DOI: 10.1109/Jetcas.2015.2433571  0.374
2015 Privat A, Clark LT, Barnaby HJ. Transient response exploration of SRAM cell metastable states caused by ionizing radiation with 3D mixed mode simulation 2014 21st Ieee International Conference On Electronics, Circuits and Systems, Icecs 2014. 443-446. DOI: 10.1109/ICECS.2014.7050017  0.312
2015 Rajabi S, Saremi M, Barnaby HJ, Edwards A, Kozicki MN, Mitkova M, Mahalanabis D, Gonzalez-Velo Y, Mahmud A. Static impedance behavior of programmable metallization cells Solid-State Electronics. 106: 27-33. DOI: 10.1016/J.Sse.2014.12.019  0.354
2015 Mitkova M, Wolf K, Belev G, Ailavajhala M, Tenne DA, Barnaby H, Kozicki MN. X-ray radiation induced effects in selected chalcogenide glasses and CBRAM devices based on them Physica Status Solidi (B) Basic Research. DOI: 10.1002/Pssb.201552562  0.38
2014 Ailavajhala MS, Gonzalez-Velo Y, Poweleit CD, Barnaby HJ, Kozicki MN, Butt DP, Mitkova M. New functionality of chalcogenide glasses for radiation sensing of nuclear wastes Journal of Hazardous Materials. 269: 68-73. PMID 24332317 DOI: 10.1016/J.Jhazmat.2013.11.050  0.467
2014 Saremi M, Rajabi S, Barnaby HJ, Kozicki MN. The effects of process variation on the parametric model of the static impedance behavior of programmable metallization cell (PMC) Materials Research Society Symposium Proceedings. 1692. DOI: 10.1557/Opl.2014.521  0.362
2014 Fleetwood D, Brown D, Girard S, Gouker P, Gerardin S, Quinn H, Barnaby H. 2014 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Editors Ieee Transactions On Nuclear Science. 61: 2807-2807. DOI: 10.1109/Tns.2015.2502479  0.313
2014 Dandamudi P, Mahmud A, Gonzalez-Velo Y, Kozicki MN, Barnaby HJ, Roos B, Alford TL, Ailavajhala M, Mitkova M, Holbert KE. Flexible sensors based on radiation-induced diffusion of ag in chalcogenide glass Ieee Transactions On Nuclear Science. 61: 3432-3437. DOI: 10.1109/Tns.2014.2364140  0.428
2014 Taggart JL, Gonzalez-Velo Y, Mahalanabis D, Mahmud A, Barnaby HJ, Kozicki MN, Holbert KE, Mitkova M, Wolf K, Deionno E, White AL. Ionizing radiation effects on nonvolatile memory properties of programmable metallization cells Ieee Transactions On Nuclear Science. 61: 2985-2990. DOI: 10.1109/Tns.2014.2362126  0.333
2014 Mahalanabis D, Barnaby HJ, Kozicki MN, Bharadwaj V, Rajabi S. Investigation of single event induced soft errors in programmable metallization cell memory Ieee Transactions On Nuclear Science. 61: 3557-3563. DOI: 10.1109/Tns.2014.2358235  0.427
2014 Dandamudi P, Kozicki MN, Barnaby HJ, Gonzalez-Velo Y, Holbert KE. Total ionizing dose tolerance of Ag - Ge40S60 based programmable metallization cells Ieee Transactions On Nuclear Science. 61: 1726-1731. DOI: 10.1109/Tns.2014.2304634  0.433
2014 Mahalanabis D, Gonzalez-Velo Y, Barnaby HJ, Kozicki MN, Dandamudi P, Vrudhula S. Impedance measurement and characterization of Ag-Ge30Se70-based programmable metallization cells Ieee Transactions On Electron Devices. 61: 3723-3730. DOI: 10.1109/Ted.2014.2358573  0.404
2014 Gonzalez-Velo Y, Barnaby HJ, Kozicki MN, Gopalan C, Holbert K. Total ionizing dose retention capability of conductive bridging random access memory Ieee Electron Device Letters. 35: 205-207. DOI: 10.1109/Led.2013.2295801  0.368
2014 Fang R, Gonzalez Velo Y, Chen W, Holbert KE, Kozicki MN, Barnaby H, Yu S. Erratum: “Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory” [Appl. Phys. Lett. 104, 183507 (2014)] Applied Physics Letters. 104: 219902. DOI: 10.1063/1.4879844  0.421
2014 Fang R, Gonzalez Velo Y, Chen W, Holbert KE, Kozicki MN, Barnaby H, Yu S. Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory Applied Physics Letters. 104. DOI: 10.1063/1.4875748  0.353
2014 Ailavajhala MS, Gonzalez-Velo Y, Poweleit C, Barnaby H, Kozicki MN, Holbert K, Butt DP, Mitkova M. Gamma radiation induced effects in floppy and rigid Ge-containing chalcogenide thin films Journal of Applied Physics. 115. DOI: 10.1063/1.4862561  0.4
2014 Mahalanabis D, Barnaby HJ, Gonzalez-Velo Y, Kozicki MN, Vrudhula S, Dandamudi P. Incremental resistance programming of programmable metallization cells for use as electronic synapses Solid-State Electronics. 100: 39-44. DOI: 10.1016/J.Sse.2014.07.002  0.351
2014 Esqueda IS, Barnaby HJ. A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits Solid-State Electronics. 91: 81-86. DOI: 10.1016/J.Sse.2013.10.008  0.48
2014 Ailavajhala MS, Nichol T, Gonzalez-Velo Y, Poweleit CD, Barnaby HJ, Kozicki MN, Butt DP, Mitkova M. Thin Ge-Se films as a sensing material for radiation doses Physica Status Solidi (B) Basic Research. 251: 1347-1353. DOI: 10.1002/Pssb.201350188  0.352
2013 Gleason JD, Barnaby HJ, Alles ML, Schlenvogt GJ. An examination of high-injection physics of silicon p-n junctions with applications in photocurrent modeling Ieee Transactions On Nuclear Science. 60: 4570-4575. DOI: 10.1109/Tns.2013.2288150  0.791
2013 Edwards AH, Barnaby H, Pineda AC, Schultz PA. Interface effects on total energy calculations for radiation-induced defects Ieee Transactions On Nuclear Science. 60: 4109-4115. DOI: 10.1109/Tns.2013.2287882  0.422
2013 Gonzalez-Velo Y, Barnaby HJ, Kozicki MN, Dandamudi P, Chandran A, Holbert KE, Mitkova M, Ailavajhala M. Total-ionizing-dose effects on the resistance switching characteristics of chalcogenide programmable metallization cells Ieee Transactions On Nuclear Science. 60: 4563-4569. DOI: 10.1109/Tns.2013.2286318  0.47
2013 Dandamudi P, Kozicki MN, Barnaby HJ, Gonzalez-Velo Y, Mitkova M, Holbert KE, Ailavajhala M, Yu W. Sensors based on radiation-induced diffusion of silver in Germanium selenide glasses Ieee Transactions On Nuclear Science. 60: 4257-4264. DOI: 10.1109/Tns.2013.2285343  0.477
2013 Schlenvogt GJ, Barnaby HJ, Wilkinson J, Morrison S, Tyler L. Simulation of TID effects in a high voltage ring oscillator Ieee Transactions On Nuclear Science. 60: 4547-4554. DOI: 10.1109/Tns.2013.2284636  0.796
2013 Dandamudi P, Barnaby HJ, Kozicki MN, Gonzalez-Velo Y, Holbert KE. Total ionizing dose tolerance of the resistance switching of Ag-Ge40S60 based programmable metallization cells Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. DOI: 10.1109/RADECS.2013.6937426  0.316
2013 Esqueda IS, Barnaby HJ. Defect-based compact model for circuit reliability simulation in advanced CMOS technologies Ieee International Integrated Reliability Workshop Final Report. 45-49. DOI: 10.1109/IIRW.2013.6804155  0.334
2013 Mikkola EO, Swaminathan V, Sivakumar B, Barnaby HJ. Ultra-low-power radiation hard ADC for particle detector readout applications Journal of Instrumentation. 8. DOI: 10.1088/1748-0221/8/04/C04007  0.39
2013 Mitkova M, Chen P, Ailavajhala M, Butt DP, Tenne DA, Barnaby H, Esqueda IS. Gamma ray induced structural effects in bare and Ag doped Ge-S thin films for sensor application Journal of Non-Crystalline Solids. 377: 195-199. DOI: 10.1016/J.Jnoncrysol.2012.12.031  0.429
2012 Adell PC, Esqueda IS, Barnaby HJ, Rax B, Johnston AH. Impact of low temperatures (< 125 K) on the total ionizing dose response and ELDRS in gated lateral PNP BJTs Ieee Transactions On Nuclear Science. 59: 3081-3086. DOI: 10.1109/Tns.2012.2224372  0.731
2012 Gonzalez-Velo Y, Barnaby HJ, Chandran A, Oleksy DR, Dandamudi P, Kozicki MN, Holbert KE, Mitkova M, Ailavajhala M, Chen P. Effects of cobalt-60 gamma-rays on Ge-Se chalcogenide glasses and Ag/Ge-Se test structures Ieee Transactions On Nuclear Science. 59: 3093-3100. DOI: 10.1109/Tns.2012.2224137  0.404
2012 Esqueda IS, Barnaby HJ, Adell PC. Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity Ieee Transactions On Nuclear Science. 59: 701-706. DOI: 10.1109/TNS.2012.2195201  0.71
2012 Esqueda IS, Barnaby HJ. Modeling the non-uniform distribution of radiation-induced interface traps Ieee Transactions On Nuclear Science. 59: 723-727. DOI: 10.1109/Tns.2012.2186826  0.468
2011 Schlenvogt GJ, Barnaby HJ, Rollins JD, Wilkinson J, Morrison S, Tyler L. Characterization and modeling of parasitic field-oxide transistors for use in radiation hardening by design Ieee Transactions On Nuclear Science. 58: 2863-2870. DOI: 10.1109/Tns.2011.2169427  0.805
2011 Barnaby HJ, Malley S, Land M, Charnicki S, Kathuria A, Wilkens B, Deionno E, Tong WM. Impact of alpha particles on the electrical characteristics of TiO 2 memristors Ieee Transactions On Nuclear Science. 58: 2838-2844. DOI: 10.1109/Tns.2011.2168827  0.436
2011 Esqueda IS, Barnaby HJ, Adell PC, Rax BG, Hjalmarson HP, McLain ML, Pease RL. Modeling low dose rate effects in shallow trench isolation oxides Ieee Transactions On Nuclear Science. 58: 2945-2952. DOI: 10.1109/Tns.2011.2168569  0.732
2011 Sanchez Esqueda I, Barnaby HJ, Holbert KE, Boulghassoul Y. Modeling inter-device leakage in 90 nm bulk CMOS devices Ieee Transactions On Nuclear Science. 58: 793-799. DOI: 10.1109/Tns.2010.2101616  0.819
2011 Esqueda IS, Barnaby HJ, Holbert KE, El-Mamouni F, Schrimpf RD. Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors Ieee Transactions On Nuclear Science. 58: 499-505. DOI: 10.1109/TNS.2010.2101615  0.646
2011 Esqueda IS, Barnaby HJ. Modeling the non-uniform distribution of interface traps Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 15-19. DOI: 10.1109/RADECS.2011.6131293  0.341
2011 Zhu Z, Kathuria A, Krishna SG, Mojarradi M, Jalali-Farahani B, Barnaby H, Wu W, Gildenblat G. Design applications of compact MOSFET model for extended temperature range (60-400K) Electronics Letters. 47: 141-142. DOI: 10.1049/El.2010.3468  0.347
2011 Rezzak N, Alles ML, Schrimpf RD, Kalemeris S, Massengill LW, Sochacki J, Barnaby HJ. The sensitivity of radiation-induced leakage to STI topology and sidewall doping Microelectronics Reliability. 51: 889-894. DOI: 10.1016/J.Microrel.2010.12.013  0.809
2010 Schlenvogt GJ, Barnaby HJ, Esqueda IS, Holbert KE, Wilkinson J, Morrison S, Tyler L. Failure analysis and radiation-enabled circuit simulation of a dual charge pump circuit Ieee Transactions On Nuclear Science. 57: 3609-3614. DOI: 10.1109/Tns.2010.2079951  0.812
2010 Pease RL, Adell PC, Rax B, McClure S, Barnaby HJ, Kruckmeyer K, Triggs B. Evaluation of an accelerated ELDRS test using molecular hydrogen Ieee Transactions On Nuclear Science. 57: 3419-3425. DOI: 10.1109/Tns.2010.2070806  0.707
2009 Chen XJ, Barnaby HJ, Adell P, Pease RL, Vermeire B, Holbert KE. Modeling the dose rate response and the effects of hydrogen in bipolar technologies Ieee Transactions On Nuclear Science. 56: 3196-3202. DOI: 10.1109/Tns.2009.2034154  0.745
2009 Hughart DR, Schrimpf RD, Fleetwood DM, Chen XJ, Barnaby HJ, Holbert KE, Pease RL, Platteter DG, Tuttle BR, Pantelides ST. The effects of aging and hydrogen on the radiation response of gated lateral PNP bipolar transistors Ieee Transactions On Nuclear Science. 56: 3361-3366. DOI: 10.1109/Tns.2009.2034151  0.804
2009 Adell PC, Pease RL, Barnaby HJ, Rax B, Chen XJ, McClure SS. Irradiation with molecular hydrogen as an accelerated total dose hardness assurance test method for bipolar linear circuits Ieee Transactions On Nuclear Science. 56: 3326-3333. DOI: 10.1109/Tns.2009.2033797  0.754
2009 Esqueda IS, Barnaby HJ, McLain ML, Adell PC, Mamouni FE, Dixit SK, Schrimpf RD, Xiong W. Modeling the radiation response of fully-depleted SOI n-channel MOSFETs Ieee Transactions On Nuclear Science. 56: 2247-2250. DOI: 10.1109/Tns.2009.2012709  0.744
2009 Esqueda IS, Barnaby HJ, Holbert KE, Mamouni FE, Schrimpf RD. Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 2-6. DOI: 10.1109/RADECS.2009.5994543  0.641
2009 McLain ML, Barnaby HJ, Esqueda IS, Oder J, Vermeire B. Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistors Ieee International Reliability Physics Symposium Proceedings. 174-179. DOI: 10.1109/IRPS.2009.5173247  0.422
2008 Chen XJ, Barnaby HJ, Vermeire B, Holbert KE, Wright D, Pease RL, Schrimpf RD, Fleetwood DM, Pantelides ST, Shaneyfelt MR, Adell P. Post-irradiation annealing mechanisms of defects generated in hydrogenated bipolar oxides Ieee Transactions On Nuclear Science. 55: 3032-3038. DOI: 10.1109/Tns.2008.2006972  0.689
2008 Mamouni FE, Dixit SK, Schrimpf RD, Adell PC, Esqueda IS, McLain ML, Barnaby HJ, Cristoloveanu S, Xiong W. Gate-length and drain-bias dependence of band-to-band tunneling-induced drain leakage in irradiated fully depleted SOI devices Ieee Transactions On Nuclear Science. 55: 3259-3264. DOI: 10.1109/Tns.2008.2006500  0.747
2008 Pease RL, Adell PC, Rax BG, Chen XJ, Barnaby HJ, Holbert KE, Hjalmarson HP. The effects of hydrogen on the enhanced Low Dose Rate Sensitivity (ELDRS) of bipolar linear circuits Ieee Transactions On Nuclear Science. 55: 3169-3173. DOI: 10.1109/Tns.2008.2006478  0.733
2008 McLain ML, Barnaby HJ, Adell PC. Analytical model of radiation response in FDSOI MOSFETS Ieee International Reliability Physics Symposium Proceedings. 643-644. DOI: 10.1109/RELPHY.2008.4558967  0.738
2008 Chen XJ, Barnaby HJ, Pease RL, Adell P. Behavior of radiation-induced defects in bipolar oxides during irradiation and annealing in hydrogen-rich and -depleted ambients Ieee International Reliability Physics Symposium Proceedings. 115-120. DOI: 10.1109/RELPHY.2008.4558871  0.722
2008 Barnaby HJ, Mclain ML, Esqueda IS, Chen XJ. Modeling ionizing radiation effects in solid state materials and CMOS devices Proceedings of the Custom Integrated Circuits Conference. 273-280. DOI: 10.1109/CICC.2008.4672075  0.349
2008 Chen XJ, Barnaby HJ. The effects of radiation-induced interface traps on base current in gated bipolar test structures Solid-State Electronics. 52: 683-687. DOI: 10.1016/J.Sse.2007.10.047  0.503
2008 Faccio F, Barnaby HJ, Chen XJ, Fleetwood DM, Gonella L, McLain M, Schrimpf RD. Total ionizing dose effects in shallow trench isolation oxides Microelectronics Reliability. 48: 1000-1007. DOI: 10.1016/J.Microrel.2008.04.004  0.62
2007 Chen W, Varanasi N, Pouget V, Barnaby HJ, Vermeire B, Adell PC, Copani T, Fouillat P. Impact of VCO topology on SET induced frequency response Ieee Transactions On Nuclear Science. 54: 2500-2505. DOI: 10.1109/Tns.2007.911422  0.665
2007 Adell PC, Barnaby HJ, Schrimpf RD, Vermeire B. Band-to-Band Tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices Ieee Transactions On Nuclear Science. 54: 2174-2180. DOI: 10.1109/Tns.2007.911419  0.767
2007 Chen XJ, Barnaby HJ, Vermeire B, Holbert K, Wright D, Pease RL, Dunham G, Platteter DG, Seiler J, McClure S, Adell P. Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides Ieee Transactions On Nuclear Science. 54: 1913-1919. DOI: 10.1109/Tns.2007.909708  0.731
2007 McLain M, Barnaby HJ, Holbert KE, Schrimpf RD, Shah H, Amort A, Baze M, Wert J. Enhanced TID susceptibility in sub-100 nm bulk CMOS I/O transistors and circuits Ieee Transactions On Nuclear Science. 54: 2210-2217. DOI: 10.1109/Tns.2007.908461  0.532
2007 Pease RL, Platteter DG, Dunham GW, Seiler JE, Adell PC, Barnaby HJ, Chen J. The effects of hydrogen in hermetically sealed packages on the total dose and dose rate response of bipolar linear circuits Ieee Transactions On Nuclear Science. 54: 2168-2173. DOI: 10.1109/Tns.2007.907870  0.729
2007 Adell PC, McClure S, Pease RL, Rax BG, Dunham GW, Barnaby HJ, Chen XJ. Impact of hydrogen contamination on the total dose response of linear bipolar microcircuits Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. DOI: 10.1109/RADECS.2007.5205490  0.7
2007 Barnaby HJ, Mclain M, Esqueda IS. Total-ionizing-dose effects on isolation oxides in modern CMOS technologies Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 261: 1142-1145. DOI: 10.1016/J.Nimb.2007.03.109  0.552
2006 Chung HH, Chen W, Bakkaloglu B, Barnaby HJ, Vermeire B, Kiaei S. Analysis of single events effects on monolithic PLL frequency synthesizers Ieee Transactions On Nuclear Science. 53: 3539-3543. DOI: 10.1109/Tns.2006.886217  0.372
2006 Barnaby HJ. Total-ionizing-dose effects in modern CMOS technologies Ieee Transactions On Nuclear Science. 53: 3103-3121. DOI: 10.1109/Tns.2006.885952  0.484
2006 Chen XJ, Barnaby HJ, Schrimpf RD, Fleetwood DM, Pease RL, Platteter DG, Dunham GW. Nature of interface defect buildup in gated bipolar devices under low dose rate irradiation Ieee Transactions On Nuclear Science. 53: 3649-3654. DOI: 10.1109/Tns.2006.885375  0.479
2006 Chen W, Pouget V, Gentry GK, Barnaby HJ, Vermeire B, Bakkaloglu B, Kiaei S, Holbert KE, Fouillat P. Radiation hardened by design RF circuits implemented in 0.13 μm CMOS technology Ieee Transactions On Nuclear Science. 53: 3449-3454. DOI: 10.1109/Tns.2006.885009  0.339
2005 Spann J, Kushner V, Thornton TJ, Yang J, Balijepalli A, Barnaby HJ, Chen XJ, Alexander D, Kemp WT, Sampson SJ, Wood ME. Total dose radiation response of CMOS compatible SOI MESFETs Ieee Transactions On Nuclear Science. 52: 2398-2402. DOI: 10.1109/Tns.2005.860701  0.52
2005 Esqueda IS, Barnaby HJ, Alles ML. Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies Ieee Transactions On Nuclear Science. 52: 2259-2264. DOI: 10.1109/Tns.2005.860671  0.524
2005 Chen XJ, Barnaby HJ, Pease RL, Schrimpf RD, Platteter D, Shaneyfelt M, Vermeire B. Estimation and verification of radiation induced not and Nit energy distribution using combined bipolar and MOS characterization methods in gated bipolar devices Ieee Transactions On Nuclear Science. 52: 2245-2251. DOI: 10.1109/Tns.2005.860669  0.498
2005 Adell PC, Schrimpf RD, Cirba CR, Holman WT, Zhu X, Barnaby HJ, Mion O. Single event transient effects in a voltage reference Microelectronics Reliability. 45: 355-359. DOI: 10.1016/J.Microrel.2004.05.029  0.758
2004 Barnaby HJ. Total dose effects in linear bipolar integrated circuits International Journal of High Speed Electronics and Systems. 14: 519-541. DOI: 10.1142/S0129156404002491  0.403
2004 Yan J, Seif D, Raghavan S, Barnaby HJ, Vermeire B, Peterson T, Shadman F. Sensor for monitoring the rinsing of patterned wafers Ieee Transactions On Semiconductor Manufacturing. 17: 531-537. DOI: 10.1109/Tsm.2004.837001  0.302
2004 Minson E, Sanchez I, Barnaby HJ, Pease RL, Platteter DG, Dunnam G. Assessment of gated sweep technique for total dose and dose rate analysis in bipolar oxides Ieee Transactions On Nuclear Science. 51: 3723-3729. DOI: 10.1109/Tns.2004.839264  0.534
2004 Pease RL, Platteter DG, Dunham GW, Seiler JE, Barnaby HJ, Schrimpf RD, Shaneyfelt MR, Maher MC, Nowlin RN. Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures Ieee Transactions On Nuclear Science. 51: 3773-3780. DOI: 10.1109/Tns.2004.839258  0.494
2004 Chen XJ, Barnaby HJ, Pease RL, Schrimpf RD, Platteter DG, Dunham G. Radiation-induced base current broadening mechanisms in gated bipolar devices Ieee Transactions On Nuclear Science. 51: 3178-3185. DOI: 10.1109/Tns.2004.839198  0.5
2004 Mikkola E, Vermeire B, Barnaby HJ, Parks HG, Borhani K. SET tolerant CMOS comparator Ieee Transactions On Nuclear Science. 51: 3609-3614. DOI: 10.1109/Tns.2004.839161  0.352
2004 Hu X, Choi BK, Barnaby HJ, Fleetwood DM, Schrimpf RD, Lee S, Shojah-Ardalan S, Wilkins R, Mishra UK, Dettmer RW. The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors Ieee Transactions On Nuclear Science. 51: 293-297. DOI: 10.1109/Tns.2004.825077  0.34
2003 Barnaby HJ, Schrimpf RD, Galloway KF, Ball DR, Pease RL, Fouillat P. Test structures for analyzing proton radiation effects in bipolar technologies Ieee Transactions On Semiconductor Manufacturing. 16: 253-258. DOI: 10.1109/TSM.2003.811941  0.421
2003 Chen W, Pouget V, Barnaby HJ, Cressler JD, Niu G, Fouillat P, Deval Y, Lewis D. Investigation of Single-Event Transients in Voltage-Controlled Oscillators Ieee Transactions On Nuclear Science. 50: 2081-2087. DOI: 10.1109/Tns.2003.820766  0.347
2002 Barnaby HJ, Smith SK, Schrimpf RD, Fleetwood DM, Pease RL. Analytical model for proton radiation effects in bipolar devices Ieee Transactions On Nuclear Science. 49: 2643-2649. DOI: 10.1109/Tns.2002.805410  0.64
2002 Hu X, Choi BK, Barnaby HJ, Fleetwood DM, Schrimpf RD, Galloway KF, Weller RA, McDonald K, Mishra UK, Dettmer RW. Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors Ieee Transactions On Nuclear Science. 49: 3213-3216. DOI: 10.1109/Tns.2002.805399  0.426
2002 Ball DR, Schrimpf RD, Barnaby HJ. Separation of ionization and displacement damage using gate-controlled lateral PNP bipolar transistors Ieee Transactions On Nuclear Science. 49: 3185-3190. DOI: 10.1109/Tns.2002.805369  0.606
2002 Deval Y, Lapuyade H, Fouillat R, Barnaby H, Darracq F, Briand R, Lewis D, Schrimpf R. Evaluation of a design methodology dedicated to dose-rate-hardened linear integrated circuits Ieee Transactions On Nuclear Science. 49: 1468-1473. DOI: 10.1109/Tns.2002.1039685  0.454
2002 Barnaby HJ, Schrimpf RD, Galloway KF, Ball DR, Pease RL, Fouillat P. Test structures for analyzing radiation effects in bipolar technologies Ieee International Conference On Microelectronic Test Structures. 197-201.  0.435
2001 Barnaby HJ, Schrimpf RD, Sternberg AL, Berthe V, Cirba CR, Pease RL. Proton radiation response mechanisms in bipolar analog circuits Ieee Transactions On Nuclear Science. 48: 2074-2080. DOI: 10.1109/23.983175  0.678
2000 Adell P, Schrimpf RD, Barnaby HJ, Marec R, Chatry C, Calvel P, Barillot C, Mion O. Analysis of single-event transients in analog circuits Ieee Transactions On Nuclear Science. 47: 2616-2623. DOI: 10.1109/23.903817  0.751
2000 Shreedhara JK, Barnaby HJ, Bhuva BL, Kerns DV, Kerns SE. Circuit technique for threshold voltage stabilization using substrate bias in total dose environments Ieee Transactions On Nuclear Science. 47: 2557-2560. DOI: 10.1109/23.903808  0.471
2000 Barnaby HJ, Cirba CR, Schrimpf RD, Fleetwood DM, Pease RL, Shaneyfelt MR, Turflinger T, Krieg JF, Maher MC. Origins of total-dose response variability in linear bipolar microcircuits Ieee Transactions On Nuclear Science. 47: 2342-2349. DOI: 10.1109/23.903775  0.652
2000 Barnaby HJ, Cirba C, Schrimpf RD, Rosier SL, Fouillat P, Montagner X. Modeling bjt radiation response with non-uniform energy distributions of interface traps Ieee Transactions On Nuclear Science. 47: 514-518.  0.625
1999 Kerns S, Jiang D, de la Bardonnie M, Pelanchon F, Barnaby H, Kerns D, Schrimpf R, Bhuva B, Mialhe P, Hoffmann A, Charles J. Light emission studies of total dose and hot carrier effects on silicon junctions Ieee Transactions On Nuclear Science. 46: 1804-1808. DOI: 10.1109/23.819157  0.343
1999 Barnaby HJ, Schrimpf RD, Pease RL, Cole P, Turflinger T, Krieg J, Titus J. Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response Ieee Transactions On Nuclear Science. 46: 1666-1673. DOI: 10.1109/23.819136  0.466
1999 Barnaby HJ, Cirba C, Schrimpf RD, Kosier S, Fouillât P, Montagner X. Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control Ieee Transactions On Nuclear Science. 46: 1652-1659. DOI: 10.1109/23.819134  0.644
1999 Krieg J, Turflinger T, Titus J, Cole P, Baker P, Gehlhausen M, Emily D, Yang L, Pease R, Barnaby H, Schrimpf R, Maher M. Hardness assurance implications of bimodal total dose response in a bipolar linear voltage comparator Ieee Transactions On Nuclear Science. 46: 1627-1632. DOI: 10.1109/23.819131  0.612
1999 Zhu XW, Massengill LW, Cirba CR, Barnaby HJ. Charge déposition modeling of thermal neutron products in fast submicron MOS devices Ieee Transactions On Nuclear Science. 46: 1378-1385. DOI: 10.1109/23.819096  0.348
1999 Warren K, Massengill L, Schrimpf R, Barnaby H. Analysis of the influence of MOS device geometry on predicted SEU cross sections Ieee Transactions On Nuclear Science. 46: 1363-1369. DOI: 10.1109/23.819094  0.506
1998 Witczak SC, Schrimpf RD, Barnaby HJ, Lacoe RC, Mayer DC, Galloway KF, Pease RL, Fleetwood DM. Moderated degradation enhancement of lateral pnp transistors due to measurement bias Ieee Transactions On Nuclear Science. 45: 2644-2648. DOI: 10.1109/23.736509  0.497
1998 Cazenave P, Fouillat P, Montagner X, Barnaby H, Schrimpf RD, Bonora L, David JP, Touboul A, Calvet M-, Calvel P. Total dose effects on gate controlled lateral PNP bipolar junction transistors Ieee Transactions On Nuclear Science. 45: 2577-2583. DOI: 10.1109/23.736500  0.547
1998 Kerns DV, Barnaby HJ, Kerns SE. Threshold voltage stabilization in radiation environments Ieee Transactions On Nuclear Science. 45: 3175-3178. DOI: 10.1109/23.736196  0.494
1998 Barnaby HJ, Schrimpf RD, Fleetwood DM, Kosier SL. Effects of emitter-tied field plates on lateral PNP ionizing radiation response Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 35-38.  0.58
1997 Wu A, Schrimpf RD, Barnaby HJ, Fleetwood DM, Pease RL, Rosier SL. Radiation-induced gain degradation in lateral pnp b jts with lightly and heavily doped emitters Ieee Transactions On Nuclear Science. 44: 1914-1921. DOI: 10.1109/23.658962  0.502
1996 Barnaby H, Tausch H, Turfler R, Cole P, Baker P, Pease R. Analysis of bipolar linear circuit response mechanisms for high and low dose rate total dose irradiations Ieee Transactions On Nuclear Science. 43: 3040-3048. DOI: 10.1109/23.556903  0.489
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