| Year |
Citation |
Score |
| 2020 |
He J, Chen H, Hu J, Zhou J, Zhang Y, Kovach A, Sideris C, Harrison MC, Zhao Y, Armani AM. Nonlinear nanophotonic devices in the ultraviolet to visible wavelength range Nanophotonics. 9: 3781-3804. DOI: 10.1515/Nanoph-2020-0231 |
0.369 |
|
| 2020 |
Yang C, Fu H, Kumar VN, Fu K, Liu H, Huang X, Yang T, Chen H, Zhou J, Deng X, Montes J, Ponce FA, Vasileska D, Zhao Y. GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD Ieee Transactions On Electron Devices. 67: 3972-3977. DOI: 10.1109/Ted.2020.3010183 |
0.325 |
|
| 2020 |
Fu H, Fu K, Alugubelli SR, Cheng C, Huang X, Chen H, Yang T, Yang C, Zhou J, Montes J, Deng X, Qi X, Goodnick SM, Ponce FA, Zhao Y. High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings Ieee Electron Device Letters. 41: 127-130. DOI: 10.1109/Led.2019.2954123 |
0.404 |
|
| 2020 |
Yang T, Fu H, Fu K, Yang C, Montes J, Huang X, Chen H, Zhou J, Qi X, Deng X, Zhao Y. Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings Ieee Journal of the Electron Devices Society. 8: 857-863. DOI: 10.1109/Jeds.2020.3014133 |
0.341 |
|
| 2020 |
Fu K, Zhou J, Deng X, Qi X, Smith DJ, Goodnick SM, Zhao Y, Fu H, Huang X, Yang T, Cheng C, Peri PR, Chen H, Montes J, Yang C. Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes Ieee Journal of the Electron Devices Society. 8: 74-83. DOI: 10.1109/Jeds.2020.2963902 |
0.43 |
|
| 2020 |
Song K, Zhang H, Fu H, Yang C, Singh R, Zhao Y, Sun H, Long S. Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping Journal of Physics D: Applied Physics. 53: 345107. DOI: 10.1088/1361-6463/Ab8D6E |
0.418 |
|
| 2020 |
Su P, Liu H, Yang C, Fu K, Fu H, Zhao Y, Ponce FA. Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films Applied Physics Letters. 117: 102110. DOI: 10.1063/5.0019349 |
0.301 |
|
| 2020 |
Yang C, Fu H, Su PY, Liu H, Fu K, Huang X, Yang TH, Chen H, Zhou J, Deng X, Montes J, Qi X, Ponce FA, Zhao Y. Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment Applied Physics Letters. 117: 52105. DOI: 10.1063/5.0018473 |
0.421 |
|
| 2020 |
peri PR, Hatch K, Messina D, Fu K, Zhao Y, Nemanich R, Smith D. Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power p-n Diodes Microscopy and Microanalysis. 1-3. DOI: 10.1017/S1431927620016049 |
0.353 |
|
| 2020 |
Huang X, Li D, Su P, Fu H, Chen H, Yang C, Zhou J, Qi X, Yang T, Montes J, Deng X, Fu K, DenBaars SP, Nakamura S, Ponce FA, ... ... Zhao Y, et al. Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures Nano Energy. 76: 105013. DOI: 10.1016/J.Nanoen.2020.105013 |
0.531 |
|
| 2020 |
Raghothamachar B, Liu Y, Peng H, Ailihumaer T, Dudley M, Shahedipour-Sandvik FS, Jones KA, Armstrong A, Allerman AA, Han J, Fu H, Fu K, Zhao Y. X-ray topography characterization of gallium nitride substrates for power device development Journal of Crystal Growth. 544: 125709. DOI: 10.1016/J.Jcrysgro.2020.125709 |
0.319 |
|
| 2019 |
Chen H, Fu H, Zhou J, Huang X, Yang TH, Fu K, Yang C, Montes JA, Zhao Y. Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV-visible spectral wavelengths using volume current method. Optics Express. 27: 17262-17273. PMID 31252939 DOI: 10.1364/Oe.27.017262 |
0.372 |
|
| 2019 |
Huang X, Fang R, Yang C, Fu K, Fu H, Chen H, Yang T, Zhou J, Montes J, Kozicki MN, Barnaby H, Zhang B, Zhao Y. Steep-Slope Field-Effect Transistors with AlGaN/GaN HEMT and Oxide based Threshold Switching Device. Nanotechnology. PMID 30721888 DOI: 10.1088/1361-6528/Ab0484 |
0.365 |
|
| 2019 |
Fu H, Fu K, Liu H, Alugubelli SR, Huang X, Chen H, Montes J, Yang T, Yang C, Zhou J, Ponce FA, Zhao Y. Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing Applied Physics Express. 12: 051015. DOI: 10.7567/1882-0786/Ab1813 |
0.381 |
|
| 2019 |
Montes J, Yang T, Fu H, Chen H, Huang X, Fu K, Baranowski I, Zhao Y. Effect of Proton Radiation on Ultrawide Bandgap AlN Schottky Barrier Diodes Ieee Transactions On Nuclear Science. 66: 91-96. DOI: 10.1109/Tns.2018.2883400 |
0.377 |
|
| 2019 |
Fu K, Fu H, Huang X, Chen H, Yang T, Montes J, Yang C, Zhou J, Zhao Y. Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics Ieee Electron Device Letters. 40: 1728-1731. DOI: 10.1109/Led.2019.2941830 |
0.374 |
|
| 2019 |
Fu K, Fu H, Huang X, Yang T, Chen H, Baranowski I, Montes J, Yang C, Zhou J, Zhao Y. Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability Ieee Electron Device Letters. 40: 375-378. DOI: 10.1109/Led.2019.2891391 |
0.361 |
|
| 2019 |
Yang T, Fu H, Chen H, Huang X, Montes J, Baranowski I, Fu K, Zhao Y. Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates Journal of Semiconductors. 40: 012801. DOI: 10.1088/1674-4926/40/1/012801 |
0.421 |
|
| 2019 |
Zhou J, Chen H, Fu H, Fu K, Deng X, Huang X, Yang T, Montes JA, Yang C, Qi X, Zhang B, Zhang X, Zhao Y. Demonstration of low loss β-Ga2O3 optical waveguides in the UV–NIR spectra Applied Physics Letters. 115: 251108. DOI: 10.1063/1.5133845 |
0.344 |
|
| 2019 |
Alugubelli SR, Fu H, Fu K, Liu H, Zhao Y, McCartney MR, Ponce FA. Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes Applied Physics Letters. 115: 201602. DOI: 10.1063/1.5127014 |
0.359 |
|
| 2019 |
Alugubelli SR, Fu H, Fu K, Liu H, Zhao Y, Ponce FA. Dopant profiling in p-i-n GaN structures using secondary electrons Journal of Applied Physics. 126: 015704. DOI: 10.1063/1.5096273 |
0.33 |
|
| 2019 |
Montes J, Yang C, Fu H, Yang T, Fu K, Chen H, Zhou J, Huang X, Zhao Y. Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction Applied Physics Letters. 114: 162103. DOI: 10.1063/1.5088516 |
0.349 |
|
| 2019 |
Liu H, Fu H, Fu K, Alugubelli SR, Su P, Zhao Y, Ponce FA. Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics Applied Physics Letters. 114: 082102. DOI: 10.1063/1.5088168 |
0.353 |
|
| 2019 |
Huang X, Li W, Fu H, Li D, Zhang C, Chen H, Fang Y, Fu K, DenBaars SP, Nakamura S, Goodnick SM, Ning C, Fan S, Zhao Y. High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects Acs Photonics. 6: 2096-2103. DOI: 10.1021/Acsphotonics.9B00655 |
0.526 |
|
| 2019 |
Peri P, Fu K, Zhao Y, Smith DJ. Characterization of Etched and Grown GaN-GaN Schottky Diodes Microscopy and Microanalysis. 25: 2240-2241. DOI: 10.1017/S1431927619011930 |
0.49 |
|
| 2018 |
Fu H, Zhang X, Fu K, Liu H, Alugubelli SR, Huang X, Chen H, Baranowski I, Yang T, Xu K, Ponce FA, Zhang B, Zhao Y. Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m-plane GaN substrates Applied Physics Express. 11: 111003. DOI: 10.7567/Apex.11.111003 |
0.4 |
|
| 2018 |
Zhao Y, Fu H, Wang GT, Nakamura S. Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes Advances in Optics and Photonics. 10: 246. DOI: 10.1364/Aop.10.000246 |
0.62 |
|
| 2018 |
Fu H, Chen H, Huang X, Baranowski I, Montes J, Yang T, Zhao Y. A Comparative Study on the Electrical Properties of Vertical (
$\bar{\sf2}01$
) and (010)
$\beta$
-Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates Ieee Transactions On Electron Devices. 65: 3507-3513. DOI: 10.1109/Ted.2018.2841904 |
0.382 |
|
| 2018 |
Fu H, Fu K, Huang X, Chen H, Baranowski I, Yang T, Montes J, Zhao Y. High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination Ieee Electron Device Letters. 39: 1018-1021. DOI: 10.1109/Led.2018.2837625 |
0.403 |
|
| 2018 |
Fu K, Fu H, Liu H, Alugubelli SR, Yang T, Huang X, Chen H, Baranowski I, Montes J, Ponce FA, Zhao Y. Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition Applied Physics Letters. 113: 233502. DOI: 10.1063/1.5052479 |
0.387 |
|
| 2018 |
Lu Z, Tian P, Fu H, Montes J, Huang X, Chen H, Zhang X, Liu X, Liu R, Zheng L, Zhou X, Gu E, Liu Y, Zhao Y. Experimental demonstration of non-line-of-sight visible light communication with different reflecting materials using a GaN-based micro-LED and modified IEEE 802.11ac Aip Advances. 8: 105017. DOI: 10.1063/1.5048942 |
0.395 |
|
| 2018 |
Huang X, Chen H, Fu H, Baranowski I, Montes J, Yang T, Fu K, Gunning BP, Koleske DD, Zhao Y. Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers Applied Physics Letters. 113: 043501. DOI: 10.1063/1.5028530 |
0.43 |
|
| 2017 |
Chen H, Fu H, Huang X, Zhang X, Yang TH, Montes JA, Baranowski I, Zhao Y. Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications. Optics Express. 25: 31758-31773. PMID 29245846 DOI: 10.1364/Oe.25.031758 |
0.438 |
|
| 2017 |
Wang H, Fan Y, Lu Z, Luo T, Fu H, Song H, Zhao Y, Christen JB. Variable self-powered light detection CMOS chip with real-time adaptive tracking digital output based on a novel on-chip sensor. Optics Express. 25: 24138-24147. PMID 29041359 DOI: 10.1364/Oe.25.024138 |
0.333 |
|
| 2017 |
Lu Z, Tian P, Chen H, Baranowski I, Fu H, Huang X, Montes J, Fan Y, Wang H, Liu X, Liu R, Zhao Y. Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK. Optics Express. 25: 17971-17981. PMID 28789285 DOI: 10.1364/Oe.25.017971 |
0.394 |
|
| 2017 |
Fu H, Baranowski I, Huang X, Chen H, Lu Z, Montes J, Zhang X, Zhao Y. Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV Ieee Electron Device Letters. 38: 1286-1289. DOI: 10.1109/Led.2017.2723603 |
0.424 |
|
| 2017 |
Fu H, Huang X, Chen H, Lu Z, Zhang X, Zhao Y. Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes Ieee Electron Device Letters. 38: 763-766. DOI: 10.1109/Led.2017.2690974 |
0.381 |
|
| 2017 |
Chen H, Fu H, Huang X, Lu Z, Zhang X, Montes J, Zhao Y. Optical Cavity Effects in InGaN Micro-Light-Emitting Diodes With Metallic Coating Ieee Photonics Journal. 9: 1-8. DOI: 10.1109/Jphot.2017.2690389 |
0.392 |
|
| 2017 |
Fu H, Huang X, Chen H, Lu Z, Zhao Y. Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD Ieee Journal of the Electron Devices Society. 5: 518-524. DOI: 10.1109/Jeds.2017.2751554 |
0.418 |
|
| 2017 |
Huang X, Fu H, Chen H, Lu Z, Baranowski I, Montes J, Yang T, Gunning BP, Koleske D, Zhao Y. Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress Applied Physics Letters. 111: 233511. DOI: 10.1063/1.5006650 |
0.371 |
|
| 2017 |
Fu H, Huang X, Chen H, Lu Z, Baranowski I, Zhao Y. Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers Applied Physics Letters. 111: 152102. DOI: 10.1063/1.4993201 |
0.423 |
|
| 2017 |
Chen H, Huang X, Fu H, Lu Z, Zhang X, Montes JA, Zhao Y. Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations Applied Physics Letters. 110: 181110. DOI: 10.1063/1.4983026 |
0.391 |
|
| 2017 |
Huang X, Fu H, Chen H, Zhang X, Lu Z, Montes J, Iza M, DenBaars SP, Nakamura S, Zhao Y. Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency Applied Physics Letters. 110: 161105. DOI: 10.1063/1.4980139 |
0.592 |
|
| 2017 |
Fu H, Chen H, Huang X, Lu Z, Zhao Y. Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well Journal of Applied Physics. 121: 014501. DOI: 10.1063/1.4972975 |
0.446 |
|
| 2016 |
Chen H, Fu H, Lu Z, Huang X, Zhao Y. Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating. Optics Express. 24: A856-A867. PMID 27409958 DOI: 10.1364/Oe.24.00A856 |
0.515 |
|
| 2016 |
Fu H, Lu Z, Zhao X, Zhang Y, DenBaars SP, Nakamura S, Zhao Y. Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$ ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence Journal of Display Technology. 12: 736-741. DOI: 10.1109/Jdt.2016.2521618 |
0.603 |
|
| 2016 |
Fu H, Lu Z, Zhao Y. Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect Aip Advances. 6: 065013. DOI: 10.1063/1.4954296 |
0.482 |
|
| 2016 |
Huang X, Fu H, Chen H, Lu Z, Ding D, Zhao Y. Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model Journal of Applied Physics. 119. DOI: 10.1063/1.4953006 |
0.331 |
|
| 2016 |
Fu H, Lu Z, Huang X, Chen H, Zhao Y. Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications Journal of Applied Physics. 119: 174502. DOI: 10.1063/1.4948667 |
0.479 |
|
| 2015 |
Marcinkevičius S, Gelžinyte K, Ivanov R, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Spatial variations of optical properties of semipolar InGaN quantum wells Proceedings of Spie - the International Society For Optical Engineering. 9363. DOI: 10.1117/12.2076973 |
0.555 |
|
| 2015 |
Ivanov R, Marcinkevičius S, Zhao Y, Becerra DL, Nakamura S, DenBaars SP, Speck JS. Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4936386 |
0.493 |
|
| 2015 |
Xue J, Zhao Y, Oh SH, Herrington WF, Speck JS, DenBaars SP, Nakamura S, Ram RJ. Thermally enhanced blue light-emitting diode Applied Physics Letters. 107. DOI: 10.1063/1.4931365 |
0.451 |
|
| 2015 |
Gelžinyte K, Ivanov R, Marcinkevičius S, Zhao Y, Becerra DL, Nakamura S, Denbaars SP, Speck JS. High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells Journal of Applied Physics. 117. DOI: 10.1063/1.4905854 |
0.532 |
|
| 2015 |
Pan CC, Yan Q, Fu H, Zhao Y, Wu YR, Van De Walle C, Nakamura S, Denbaars SP. High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier Electronics Letters. 51: 1187-1189. DOI: 10.1049/El.2015.1647 |
0.634 |
|
| 2014 |
Zhao Y, Farrell RM, Wu Y, Speck JS. Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices Japanese Journal of Applied Physics. 53: 100206. DOI: 10.7567/Jjap.53.100206 |
0.472 |
|
| 2014 |
Zhao Y, Wu F, Yang T, Wu Y, Nakamura S, Speck JS. Atomic-scale nanofacet structure in semipolar $(20\bar{2}\bar{1})$ and $(20\bar{2}1)$ InGaN single quantum wells Applied Physics Express. 7: 025503. DOI: 10.7567/Apex.7.025503 |
0.484 |
|
| 2014 |
Hardy MT, Wu F, Huang CY, Zhao Y, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes Ieee Photonics Technology Letters. 26: 43-46. DOI: 10.1109/Lpt.2013.2288927 |
0.679 |
|
| 2014 |
Becerra DL, Zhao Y, Oh SH, Pynn CD, Fujito K, Denbaars SP, Nakamura S. High-power low-droop violet semipolar (30 3 ¯ 1 ¯) InGaN/GaN light-emitting diodes with thick active layer design Applied Physics Letters. 105. DOI: 10.1063/1.4900793 |
0.621 |
|
| 2014 |
Marcinkevičius S, Gelžinyte K, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Carrier redistribution between different potential sites in semipolar (20 2 ¯ 1) InGaN quantum wells studied by near-field photoluminescence Applied Physics Letters. 105. DOI: 10.1063/1.4896034 |
0.549 |
|
| 2014 |
Wu F, Zhao Y, Romanov A, Denbaars SP, Nakamura S, Speck JS. Stacking faults and interface rougheningin semipolar (20 2 ̄ 1 ̄) single InGaN quantum wells for long wavelength emission Applied Physics Letters. 104. DOI: 10.1063/1.4871512 |
0.543 |
|
| 2014 |
Ji Y, Liu W, Erdem T, Chen R, Tiam Tan S, Zhang ZH, Ju Z, Zhang X, Sun H, Sun XW, Zhao Y, Denbaars SP, Nakamura S, Volkan Demir H. Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes Applied Physics Letters. 104. DOI: 10.1063/1.4870840 |
0.587 |
|
| 2014 |
Marcinkevičius S, Ivanov R, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Highly polarized photoluminescence and its dynamics in semipolar (20 2 ̄ 1 ̄) InGaN/GaN quantum well Applied Physics Letters. 104. DOI: 10.1063/1.4869459 |
0.533 |
|
| 2013 |
Zhao Y, Yan Q, Feezell D, Fujito K, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. Optics Express. 21: A53-9. PMID 23389275 DOI: 10.1364/Oe.21.000A53 |
0.572 |
|
| 2013 |
Kawaguchi Y, Huang CY, Wu YR, Zhao Y, DenBaars SP, Nakamura S. Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jc08 |
0.645 |
|
| 2013 |
Zhao Y, Oh SH, Wu F, Kawaguchi Y, Tanaka S, Fujito K, Speck JS, DenBaars SP, Nakamura S. Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth Applied Physics Express. 6. DOI: 10.7567/Apex.6.062102 |
0.636 |
|
| 2013 |
Kawaguchi Y, Huang SC, Farrell RM, Zhao Y, Speck JS, DenBaars SP, Nakamura S. Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes Applied Physics Express. 6. DOI: 10.7567/Apex.6.052103 |
0.614 |
|
| 2013 |
Marcinkevičius S, Zhao Y, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra Applied Physics Letters. 103. DOI: 10.1063/1.4823589 |
0.524 |
|
| 2013 |
Zhao Y, Wu F, Huang CY, Kawaguchi Y, Tanaka S, Fujito K, Speck JS, Denbaars SP, Nakamura S. Suppressing void defects in long wavelength semipolar (2021) InGaN quantum wells by growth rate optimization Applied Physics Letters. 102. DOI: 10.1063/1.4794864 |
0.528 |
|
| 2013 |
Denbaars SP, Feezell D, Kelchner K, Pimputkar S, Pan CC, Yen CC, Tanaka S, Zhao Y, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck JS, Nakamura S. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays Acta Materialia. 61: 945-951. DOI: 10.1016/J.Actamat.2012.10.042 |
0.776 |
|
| 2012 |
Pan CC, Gilbert T, Pfaff N, Tanaka S, Zhao Y, Feezell D, Speck JS, Nakamura S, DenBaars SP. Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.102103 |
0.595 |
|
| 2012 |
Pan CC, Tanaka S, Wu F, Zhao Y, Speck JS, Nakamura S, Den Baars SP, Feezel D. High-power, low-efficiency-droop semipolar (202̄1̄) single-quantum-well blue light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.062103 |
0.638 |
|
| 2012 |
Kawaguchi Y, Huang CY, Wu YR, Yan Q, Pan CC, Zhao Y, Tanaka S, Fujito K, Feezell D, Van De Walle CG, Denbaars SP, Nakamura S. Influence of polarity on carrier transport in semipolar (2021̄) and (202̄1) multiple-quantum-well light-emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.4726106 |
0.592 |
|
| 2012 |
Zhao Y, Yan Q, Huang CY, Huang SC, Shan Hsu P, Tanaka S, Pan CC, Kawaguchi Y, Fujito K, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S, Feezell D. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Applied Physics Letters. 100. DOI: 10.1063/1.4719100 |
0.542 |
|
| 2012 |
Zhao Y, Huang CY, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021) blue and green InGaN light-emitting diodes 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.443 |
|
| 2011 |
Richardson JJ, Koslow I, Pan CC, Zhao Y, Ha JS, Den Baars SP. Semipolar single-crystal ZnO films deposited by low-temperature aqueous solution phase epitaxy on GaN light-emitting diodes Applied Physics Express. 4. DOI: 10.1143/Apex.4.126502 |
0.435 |
|
| 2011 |
Zhao Y, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. High-power blue-violet semipolar (202̄1̄) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2 Applied Physics Express. 4. DOI: 10.1143/Apex.4.082104 |
0.592 |
|
| 2011 |
Zhao Y, Tanaka S, Yan Q, Huang C, Chung RB, Pan C, Fujito K, Feezell D, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S. Publisher’s Note: “High optical polarization ratio from semipolar ((202¯1¯)) blue-green InGaN/GaN light-emitting diodes” [Appl. Phys. Lett. 99, 051109 (2011)] Applied Physics Letters. 99: 229902. DOI: 10.1063/1.3665683 |
0.736 |
|
| 2011 |
Huang CY, Yan Q, Zhao Y, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. Influence of Mg-doped barriers on semipolar (202̄1) multiple-quantum-well green light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3647560 |
0.581 |
|
| 2011 |
Zhao Y, Tanaka S, Yan Q, Huang CY, Chung RB, Pan CC, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3619826 |
0.759 |
|
| 2011 |
Tanaka S, Zhao Y, Koslow I, Pan CC, Chen HT, Sonoda J, Denbaars SP, Nakamura S. Droop improvement in high current range on PSS-LEDs Electronics Letters. 47: 335-336. DOI: 10.1049/El.2010.3306 |
0.584 |
|
| 2010 |
Zhao Y, Sonada J, Koslow I, Pan CC, Ohta H, Ha JS, DenBaars SP, Nakamura S. Optimization of device structures for bright blue semipolar (101̄11̄1) light emitting diodes via metalorganic chemical vapor deposition Japanese Journal of Applied Physics. 49: 0702061-0702063. DOI: 10.1143/Jjap.49.070206 |
0.6 |
|
| 2010 |
Yamamoto S, Zhao Y, Pan CC, Chung RB, Fujito K, Sonoda J, DenBaars SP, Nakamura S. High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates Applied Physics Express. 3. DOI: 10.1143/Apex.3.122102 |
0.769 |
|
| 2010 |
Zhao Y, Sonoda J, Pan CC, Brinkley S, Koslow I, Fujito K, Ohta H, DenBaars SP, Nakamura S. 30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique Applied Physics Express. 3. DOI: 10.1143/Apex.3.102101 |
0.604 |
|
| Show low-probability matches. |