| Year |
Citation |
Score |
| 2022 |
Morgan TA, Rudie J, Zamani-Alavijeh M, Kuchuk AV, Orishchin N, Alema F, Osinsky A, Sleezer R, Salamo G, Ware ME. Band Offsets of the MOCVD-Grown β-(AlGa)O/β-GaO (010) Heterojunction. Acs Applied Materials & Interfaces. PMID 35848769 DOI: 10.1021/acsami.2c04177 |
0.754 |
|
| 2020 |
Liu J, Yuan Q, Liang B, Yan Q, Wang Y, Wang C, Wang S, Fu G, Mazur YI, Ware ME, Salamo GJ. Photoluminescence characterization of wetting layer and carrier dynamics for coupled InGaAs/GaAs surface quantum dot pair structures. Optics Express. 28: 20704-20713. PMID 32680124 DOI: 10.1364/Oe.393726 |
0.507 |
|
| 2020 |
Hu X, Zhang Y, Guzun D, Ware ME, Mazur YI, Lienau C, Salamo GJ. Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation. Scientific Reports. 10: 10930. PMID 32616829 DOI: 10.1038/S41598-020-67961-Z |
0.516 |
|
| 2020 |
Yuan Q, Liang B, Luo S, Wang Y, Yan Q, Wang S, Fu G, Mazur YI, Maidaniuk Y, Ware ME, Salamo GJ. Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy. Nanotechnology. PMID 32303015 DOI: 10.1088/1361-6528/Ab8A8E |
0.499 |
|
| 2020 |
Kondratenko S, Kozak O, Rozouvan S, Mazur YI, Maidaniuk Y, Wu J, Wu S, Wang Z, Chan S, Kim D, Liu H, Salamo GJ. Carrier dynamics and recombination in silicon doped InAs/GaAs quantum dot solar cells with AlAs cap layers Semiconductor Science and Technology. DOI: 10.1088/1361-6641/Abb1C7 |
0.47 |
|
| 2020 |
Stanchu HV, Kuchuk AV, Mazur YI, Margetis J, Tolle J, Yu S, Salamo GJ. Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate Applied Physics Letters. 116: 232101. DOI: 10.1063/5.0011842 |
0.342 |
|
| 2020 |
Kumar R, Maidaniuk Y, Saha SK, Mazur YI, Salamo GJ. Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation Journal of Applied Physics. 127: 65306. DOI: 10.1063/1.5139400 |
0.52 |
|
| 2020 |
Li C, Maidaniuk Y, Kuchuk AV, Mazur YI, Benamara M, Ware ME, Salamo GJ. Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells Materials & Design. 190: 108565. DOI: 10.1016/J.Matdes.2020.108565 |
0.469 |
|
| 2020 |
Yuan Q, Liu J, Liang B, Ren D, Wang Y, Guo Y, Wang S, Fu G, Mazur YI, Ware ME, Salamo GJ. Lateral carrier transfer for high density InGaAs/GaAs surface quantum dots Journal of Luminescence. 218: 116870. DOI: 10.1016/J.Jlumin.2019.116870 |
0.51 |
|
| 2020 |
Saha SK, Kumar R, Kuchuk A, Stanchu H, Mazur YI, Yu S, Salamo GJ. GaAs epitaxial growth on R-plane sapphire substrate Journal of Crystal Growth. 548: 125848. DOI: 10.1016/J.Jcrysgro.2020.125848 |
0.348 |
|
| 2019 |
Ashalley E, Gryczynski K, Wang Z, Salamo G, Neogi A. Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well. Nanoscale. PMID 30633286 DOI: 10.1039/C8Nr07489E |
0.431 |
|
| 2019 |
Saha SK, Kumar R, Kuchuk A, Alavijeh MZ, Maidaniuk Y, Mazur YI, Yu S, Salamo GJ. Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate Crystal Growth & Design. 19: 5088-5096. DOI: 10.1021/Acs.Cgd.9B00448 |
0.393 |
|
| 2019 |
Zhou C, Liang B, Liu J, Wang Y, Guo Y, Wang S, Fu G, Mazur YI, Ware ME, Salamo GJ. Comparative study of photoluminescence for type-I InAs/GaAs0.89Sb0.11 and type-II InAs/GaAs0.85Sb0.15 quantum dots Optical Materials. 98: 109479. DOI: 10.1016/J.Optmat.2019.109479 |
0.485 |
|
| 2018 |
Yuan Q, Liang B, Zhou C, Wang Y, Guo Y, Wang S, Fu G, Mazur YI, Ware ME, Salamo GJ. Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots. Nanoscale Research Letters. 13: 387. PMID 30498864 DOI: 10.1186/S11671-018-2792-Y |
0.506 |
|
| 2018 |
Liang B, Yuan Q, Su L, Wang Y, Guo Y, Wang S, Fu G, Marega E, Mazur YI, Ware ME, Salamo G. Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots. Optics Express. 26: 23107-23118. PMID 30184966 DOI: 10.1364/Oe.26.023107 |
0.514 |
|
| 2018 |
Lytvyn PM, Kuchuk AV, Mazur YI, Li C, Ware ME, Wang Z, Kladko V, Belyaev A, Salamo GJ. Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy. Acs Applied Materials & Interfaces. PMID 29381323 DOI: 10.1021/Acsami.7B19160 |
0.32 |
|
| 2018 |
Chen W, Deng Z, Guo D, Chen Y, Mazur YI, Maidaniuk Y, Benamara M, Salamo GJ, Liu H, Wu J, Chen B. Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate Journal of Lightwave Technology. 36: 2572-2581. DOI: 10.1109/Jlt.2018.2811388 |
0.451 |
|
| 2018 |
Guo D, Jiang Q, Tang M, Chen S, Mazur YI, Maidaniuk Y, Benamara M, Semtsiv MP, Masselink WT, Salamo GJ, Liu H, Wu J. Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon Semiconductor Science and Technology. 33: 094009. DOI: 10.1088/1361-6641/Aad83C |
0.5 |
|
| 2018 |
Kumar R, Maidaniuk Y, Kuchuk A, Saha SK, Ghosh PK, Mazur YI, Ware ME, Salamo GJ. Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix Journal of Applied Physics. 124: 235303. DOI: 10.1063/1.5053412 |
0.41 |
|
| 2018 |
Li C, Maidaniuk Y, Kuchuk AV, Shetty S, Ghosh P, White TP, Morgan TA, Hu X, Wu Y, Ware ME, Mazur YI, Salamo GJ. Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures Journal of Applied Physics. 123: 195302. DOI: 10.1063/1.5025671 |
0.407 |
|
| 2018 |
Zhang Y, Wu Y, Wang X, Ying L, Kumar R, Yu Z, Fossum ER, Liu J, Salamo GJ, Yu S. Detecting Single Photons Using Capacitive Coupling of Single Quantum Dots Acs Photonics. 5: 2008-2021. DOI: 10.1021/Acsphotonics.7B01515 |
0.394 |
|
| 2018 |
Stanchu HV, Kuchuk AV, Mazur YI, Li C, Lytvyn PM, Schmidbauer M, Maidaniuk Y, Benamara M, Ware ME, Wang ZM, Salamo GJ. Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers Crystal Growth & Design. 19: 200-210. DOI: 10.1021/Acs.Cgd.8B01267 |
0.31 |
|
| 2018 |
Stanchu H, Kuchuk A, Lytvyn P, Mazur Y, Maidaniuk Y, Benamara M, Li S, Kryvyi S, Kladko V, Belyaev A, Wang Z, Salamo G. Strain relaxation in GaN/AlN superlattices on GaN(0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects Materials & Design. 157: 141-150. DOI: 10.1016/J.Matdes.2018.07.037 |
0.333 |
|
| 2018 |
Wang Y, Sheng X, Yuan Q, Guo Q, Wang S, Fu G, Liang B, Huffaker DL, Mazur YI, Maidaniuk Y, Ware ME, Salamo GJ. Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots Journal of Luminescence. 202: 20-26. DOI: 10.1016/J.Jlumin.2018.05.029 |
0.482 |
|
| 2018 |
Su L, Liang B, Wang Y, Yuan Q, Guo Q, Wang S, Fu G, Huffaker DL, Mazur YI, Ware ME, Maidaniuk Y, Salamo GJ. Abnormal photoluminescence for GaAs/Al0.2Ga0.8As quantum dot-ring hybrid nanostructure grown by droplet epitaxy Journal of Luminescence. 195: 187-192. DOI: 10.1016/J.Jlumin.2017.11.008 |
0.493 |
|
| 2018 |
Morgan TA, Zamani-Alavijeh M, Erickson S, Story G, Schroeder W, Kuchuk A, Benamara M, Salamo GJ. Self-assembled stoichiometric barium titanate thin films grown by molecular beam epitaxy Journal of Crystal Growth. 493: 15-19. DOI: 10.1016/J.Jcrysgro.2018.04.023 |
0.317 |
|
| 2017 |
Zhang Y, Wu Y, Wang X, Fossum ER, Kumar R, Liu J, Salamo G, Yu SQ. Non-avalanche single photon detection without carrier transit-time delay through quantum capacitive coupling. Optics Express. 25: 26508-26518. PMID 29092140 DOI: 10.1364/Oe.25.026508 |
0.432 |
|
| 2017 |
Tsykaniuk BI, Nikolenko AS, Strelchuk VV, Naseka VM, Mazur YI, Ware ME, DeCuir EA, Sadovyi B, Weyher JL, Jakiela R, Salamo GJ, Belyaev AE. Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire. Nanoscale Research Letters. 12: 502. PMID 28828578 DOI: 10.1186/S11671-017-2227-1 |
0.326 |
|
| 2017 |
Kondratenko S, Iliash S, Mazur YI, Kunets VP, Benamara M, Salamo GJ. Charge carrier relaxation in InGaAs-GaAs quantum wire modulation-doped heterostructures. Nanotechnology. PMID 28714860 DOI: 10.1088/1361-6528/aa800c |
0.34 |
|
| 2017 |
Bourdo SE, Al Faouri R, Sleezer R, Nima ZA, Lafont A, Chhetri BP, Benamara M, Martin B, Salamo GJ, Biris AS. Physicochemical characteristics of pristine and functionalized graphene. Journal of Applied Toxicology : Jat. PMID 28677847 DOI: 10.1002/Jat.3493 |
0.739 |
|
| 2017 |
Tsykaniuk BI, Nikolenko AS, Strelchuk VV, Naseka VM, Mazur YI, Ware ME, DeCuir EA, Sadovyi B, Weyher JL, Jakiela R, Salamo GJ, Belyaev AE. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire. Nanoscale Research Letters. 12: 397. PMID 28599511 DOI: 10.1186/S11671-017-2171-0 |
0.355 |
|
| 2017 |
Chen X, Li S, Hu L, Wang K, Zhao G, He L, Liu J, Yu C, Tao J, Lin W, Yang G, Salamo GJ. Near Infrared Quantum Cutting Luminescence of Er(3+)/Tm(3+) Ion Pairs in a Telluride Glass. Scientific Reports. 7: 1976. PMID 28512293 DOI: 10.1038/S41598-017-02244-8 |
0.312 |
|
| 2017 |
Al Faouri R, Henry R, Biris AS, Sleezer R, Salamo GJ. Adhesive force between graphene nanoscale flakes and living biological cells. Journal of Applied Toxicology : Jat. PMID 28485473 DOI: 10.1002/Jat.3478 |
0.757 |
|
| 2017 |
Wang Y, Sheng X, Guo Q, Li X, Wang S, Fu G, Mazur YI, Maidaniuk Y, Ware ME, Salamo GJ, Liang B, Huffaker DL. Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness. Nanoscale Research Letters. 12: 229. PMID 28359139 DOI: 10.1186/S11671-017-1998-8 |
0.455 |
|
| 2017 |
Kondratenko SV, Iliash SA, Vakulenko OV, Mazur YI, Benamara M, Marega E, Salamo GJ. Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures. Nanoscale Research Letters. 12: 183. PMID 28282982 DOI: 10.1186/S11671-017-1954-7 |
0.5 |
|
| 2017 |
Al Saqri NA, Felix JF, Aziz M, Kunets VP, Jameel D, Taylor D, Henini M, Abd El-Sadek MS, Furrow C, Ware ME, Benamara M, Mortazavi M, Salamo G. Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique. Nanotechnology. 28: 045707. PMID 27997370 DOI: 10.1088/1361-6528/28/4/045707 |
0.426 |
|
| 2017 |
Wu J, Wang ZM, Li X, Mazur YI, Salamo GJ. Fabrication of ultralow-density quantum dots by droplet etching epitaxy Journal of Materials Research. 32: 4095-4101. DOI: 10.1557/Jmr.2017.408 |
0.536 |
|
| 2017 |
Sarollahi M, Kunets VP, Mazur YI, Mortazavi M, Salamo GJ, Ware M. Temperature dependence of quantum-wire intermediate-band solar cells Proceedings of Spie. 10099. DOI: 10.1117/12.2253546 |
0.454 |
|
| 2017 |
Liang B, Huffaker DL, Mazur YI, Ware M, Salamo GJ, Su L, Wang Y, Guo Q. Optical characteristics of InAlAs/GaAlAs/GaAs quantum dots (Conference Presentation) Proceedings of Spie. 10114. DOI: 10.1117/12.2251605 |
0.47 |
|
| 2017 |
Kim D, Tang M, Wu J, Hatch S, Maidaniuk Y, Dorogan V, Mazur YI, Salamo GJ, Liu H. Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers Proceedings of Spie. 10099. DOI: 10.1117/12.2250328 |
0.73 |
|
| 2017 |
Kryvyi SB, Lytvyn PM, Kladko VP, Stanchu HV, Kuchuk AV, Mazur YI, Salamo GJ, Li S, Kogutyuk PP, Belyaev AE. Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 062902. DOI: 10.1116/1.4999468 |
0.417 |
|
| 2017 |
Su L, Wang Y, Guo Q, Li X, Wang S, Fu G, Mazur YI, Ware ME, Salamo GJ, Liang B, Huffaker DL. Optical characterization of type-I to type-II band alignment transition in GaAs/AlxGa1−xAs quantum rings grown by droplet epitaxy Journal of Physics D: Applied Physics. 50: 32LT01. DOI: 10.1088/1361-6463/Aa7B04 |
0.42 |
|
| 2017 |
Kondratenko S, Yakovliev A, Iliash S, Mazur Y, Ware M, Lam P, Tang M, Wu J, Liu H, Salamo G. Influence of built-in charge on photogeneration and recombination processes in InAs/GaAs quantum dot solar cells Journal of Physics D. 50: 165101. DOI: 10.1088/1361-6463/Aa61D4 |
0.481 |
|
| 2017 |
Guo Y, Liu Y, Liang B, Wang Y, Guo Q, Wang S, Fu G, Mazur YI, Ware ME, Salamo GJ. Carrier dynamics of InAs quantum dots with GaAs1−xSbx barrier layers Applied Physics Letters. 111: 191105. DOI: 10.1063/1.5003097 |
0.483 |
|
| 2017 |
Kolomys O, Tsykaniuk B, Strelchuk V, Naumov A, Kladko V, Mazur YI, Ware ME, Li S, Kuchuk A, Maidaniuk Y, Benamara M, Belyaev A, Salamo GJ. Optical and structural study of deformation states in the GaN/AlN superlattices Journal of Applied Physics. 122: 155302. DOI: 10.1063/1.4999175 |
0.389 |
|
| 2017 |
Wang Y, Sheng X, Liu Y, Liang B, Li X, Guo Q, Mazur YI, Ware ME, Salamo GJ. PL of low-density InAs/GaAs quantum dots with different bimodal populations Micro & Nano Letters. 12: 599-604. DOI: 10.1049/Mnl.2016.0779 |
0.499 |
|
| 2016 |
Wang G, Liang B, Juang BC, Das A, Debnath MC, Huffaker DL, Mazur YI, Ware ME, Salamo GJ. Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots. Nanotechnology. 27: 465701. PMID 27749272 DOI: 10.1088/0957-4484/27/46/465701 |
0.49 |
|
| 2016 |
Steele JA, Lewis RA, Horvat J, Nancarrow MJ, Henini M, Fan D, Mazur YI, Schmidbauer M, Ware ME, Yu SQ, Salamo GJ. Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi. Scientific Reports. 6: 28860. PMID 27377213 DOI: 10.1038/Srep28860 |
0.399 |
|
| 2016 |
Linares-García G, Meza-Montes L, Stinaff E, Alsolamy SM, Ware ME, Mazur YI, Wang ZM, Lee J, Salamo GJ. Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy. Nanoscale Research Letters. 11: 309. PMID 27342603 DOI: 10.1186/S11671-016-1518-2 |
0.476 |
|
| 2016 |
Kuchuk AV, Kryvyi S, Lytvyn PM, Li S, Kladko VP, Ware ME, Mazur YI, Safryuk NV, Stanchu HV, Belyaev AE, Salamo GJ. The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study. Nanoscale Research Letters. 11: 252. PMID 27184965 DOI: 10.1186/S11671-016-1478-6 |
0.345 |
|
| 2016 |
Chen X, Li S, Wang K, Wu Z, Zhao G, Tao J, Ma H, Lin W, Liu H, Hu L, Guo P, Salamo GJ. Two-photon, three-photon, and four-photon near-infrared quantum cutting luminescence of an Er3+ activator in tellurium glass phosphor. Applied Optics. 55: 3343-3350. PMID 27140109 DOI: 10.1364/Ao.55.003343 |
0.392 |
|
| 2016 |
Lytvyn PM, Efremov AA, Lytvyn O, Prokopenko IV, Mazur YI, Ware ME, Fologia D, Salamo GJ. Precise Manipulations with Asymmetric Nano-Objects Viscoelastically Bound to a Surface Journal of Nano Research. 39: 256-276. DOI: 10.4028/Www.Scientific.Net/Jnanor.39.256 |
0.31 |
|
| 2016 |
Liu Y, Wang Y, Liang B, Guo Q, Wang S, Fu G, Mazur Y, Ware M, Salamo G. Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs Crystals. 6: 144. DOI: 10.3390/CRYST6110144 |
0.373 |
|
| 2016 |
Hu X, Guzun D, Ware ME, Mazur YI, Salamo GJ. Two-photon Absorption Induced Emission of InAs/GaAs Quantum Dots Frontiers in Optics. DOI: 10.1364/Fio.2016.Jw4A.175 |
0.457 |
|
| 2016 |
Onno A, Wu J, Jiang Q, Chen S, Tang M, Maidaniuk Y, Benamara M, Mazur YI, Salamo GJ, Harder N, Oberbeck L, Liu H. 1.7eV Al0.2Ga0.8As solar cells epitaxially grown on silicon by SSMBE using a superlattice and dislocation filters Proceedings of Spie. 9743: 974310. DOI: 10.1117/12.2208950 |
0.378 |
|
| 2016 |
Kim D, Tang M, Wu J, Hatch S, Maidaniuk Y, Dorogan V, Mazur YI, Salamo GJ, Liu H. Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2016.2547581 |
0.702 |
|
| 2016 |
Su L, Liang B, Wang Y, Guo Q, Li X, Wang S, Fu G, Mazur YI, Ware ME, Salamo GJ. The continuum state in photoluminescence of type-II In0.46Al0.54As/Al0.54Ga0.46As quantum dots Applied Physics Letters. 109: 183103. DOI: 10.1063/1.4966895 |
0.404 |
|
| 2016 |
Koukourinkova SD, Benamara M, Ware ME, Wang ZM, Salamo GJ. Formation of self-assembled Ga-rich droplet chains on GaAs (100) patterned by focused ion beam Applied Physics Letters. 109: 123102. DOI: 10.1063/1.4962957 |
0.417 |
|
| 2016 |
Golovynskyi SL, Dacenko OI, Kondratenko SV, Lavoryk SR, Mazur YI, Wang ZM, Ware ME, Tarasov GG, Salamo GJ. Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures Journal of Applied Physics. 119: 184303. DOI: 10.1063/1.4948953 |
0.453 |
|
| 2016 |
Wu J, Jiang Q, Chen S, Tang M, Mazur YI, Maidaniuk Y, Benamara M, Semtsiv MP, Masselink WT, Sablon KA, Salamo GJ, Liu H. Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates Acs Photonics. 3: 749-753. DOI: 10.1021/Acsphotonics.6B00076 |
0.722 |
|
| 2016 |
Lam P, Wu J, Tang M, Kim D, Hatch S, Ramiro I, Dorogan VG, Benamara M, Mazur YI, Salamo GJ, Wilson J, Allison R, Liu H. InAs/InGaP quantum dot solar cells with an AlGaAs interlayer Solar Energy Materials and Solar Cells. 144: 96-101. DOI: 10.1016/J.Solmat.2015.08.031 |
0.72 |
|
| 2016 |
Kladko V, Kuchuk A, Naumov A, Safriuk N, Kolomys O, Kryvyi S, Stanchu H, Belyaev A, Strelchuk V, Yavich B, Mazur YI, Ware ME, Salamo GJ. Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures Physica E: Low-Dimensional Systems and Nanostructures. 76: 140-145. DOI: 10.1016/J.Physe.2015.10.022 |
0.465 |
|
| 2016 |
Onno A, Wu J, Jiang Q, Chen S, Tang M, Maidaniuk Y, Benamara M, Mazur YI, Salamo GJ, Harder N, Oberbeck L, Liu H. Al0.2Ga0.8As Solar Cells Monolithically Grown on Si and GaAs by MBE for III-V/Si Tandem Dual-junction Applications☆ Energy Procedia. 92: 661-668. DOI: 10.1016/J.Egypro.2016.07.037 |
0.354 |
|
| 2015 |
Wu J, Ramsay A, Sanchez A, Zhang Y, Kim D, Brossard F, Hu X, Benamara M, Ware ME, Mazur YI, Salamo GJ, Aagesen M, Wang Z, Liu H. Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate. Nano Letters. PMID 26666697 DOI: 10.1021/Acs.Nanolett.5B04142 |
0.475 |
|
| 2015 |
Steele JA, Horvat J, Lewis RA, Henini M, Fan D, Mazur YI, Dorogan VG, Grant PC, Yu SQ, Salamo GJ. Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures. Nanoscale. PMID 26584058 DOI: 10.1039/C5Nr06676J |
0.649 |
|
| 2015 |
Liu Y, Liang B, Guo Q, Wang S, Fu G, Fu N, Wang ZM, Mazur YI, Salamo GJ. Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer. Nanoscale Research Letters. 10: 973. PMID 26123271 DOI: 10.1186/S11671-015-0973-5 |
0.499 |
|
| 2015 |
Chen X, Li S, Salamo GJ, Li Y, He L, Yang G, Gao Y, Liu Q. Sensitized intense near-infrared downconversion quantum cutting three-photon luminescence phenomena of the Tm(3+) ion activator in Tm(3+)Bi(3+):YNbO(4) powder phosphor. Optics Express. 23: A51-61. PMID 25836253 DOI: 10.1364/Oe.23.000A51 |
0.33 |
|
| 2015 |
Chen S, Tang M, Wu J, Jiang Q, Dorogan V, Benamara M, Mazur Y, Salamo G, Liu H. Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate Photonics. 2: 646-658. DOI: 10.3390/Photonics2020646 |
0.687 |
|
| 2015 |
Chen S, Tang M, Jiang Q, Wu J, Dorogan VG, Benamara M, Mazur YI, Salamo GJ, Seeds A, Liu H. Electrically pumped 1.3-μm InAs/GaAs quantum dot laser monolithically grown on Si substrate lasing up to 111°C Conference On Lasers and Electro-Optics Europe - Technical Digest. 2015. DOI: 10.1364/CLEO_SI.2015.SW3F.1 |
0.682 |
|
| 2015 |
Zhou X, Royo M, Liu W, Lee JH, Salamo GJ, Climente JI, Doty MF. Diamagnetic and paramagnetic shifts in self-assembled InAs lateral quantum dot molecules Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.205427 |
0.391 |
|
| 2015 |
Su L, Liang B, Wang Y, Guo Q, Wang S, Fu G, Wang ZM, Mazur YI, Ware ME, Salamo GJ. Coexistence of type-I and type-II band alignments in In0.46Al0.54As/Ga0.46Al0.54As self-assembled quantum dots Applied Physics Letters. 107. DOI: 10.1063/1.4935161 |
0.434 |
|
| 2015 |
Mazur YI, Lopes-Oliveira V, De Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains Journal of Applied Physics. 117. DOI: 10.1063/1.4918544 |
0.721 |
|
| 2015 |
Tang M, Wu J, Chen S, Jiang Q, Seeds AJ, Liu H, Dorogan VG, Benamara M, Mazur Y, Salamo G. Optimisation of the dislocation filter layers in 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates Iet Optoelectronics. 9: 61-64. DOI: 10.1049/Iet-Opt.2014.0078 |
0.706 |
|
| 2015 |
Chen X, Salamo GJ, Li S, Wang J, Guo Y, Gao Y, He L, Ma H, Tao J, Sun P, Lin W, Liu Q. Two-photon, three-photon, and four-photon excellent near-infrared quantum cutting luminescence of Tm3+ ion activator emerged in Tm3+:YNbO4 powder phosphor one material simultaneously Physica B: Condensed Matter. 479: 159-164. DOI: 10.1016/J.Physb.2015.10.009 |
0.403 |
|
| 2014 |
Steele JA, Lewis RA, Henini M, Lemine OM, Fan D, Mazur YI, Dorogan VG, Grant PC, Yu SQ, Salamo GJ. Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration. Optics Express. 22: 11680-9. PMID 24921290 DOI: 10.1364/Oe.22.011680 |
0.636 |
|
| 2014 |
Tang M, Chen S, Wu J, Jiang Q, Dorogan VG, Benamara M, Mazur YI, Salamo GJ, Seeds A, Liu H. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers. Optics Express. 22: 11528-35. PMID 24921274 DOI: 10.1364/Oe.22.011528 |
0.693 |
|
| 2014 |
Kuchuk AV, Kladko VP, Petrenko TL, Bryksa VP, Belyaev AE, Mazur YI, Ware ME, DeCuir EA, Salamo GJ. Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices. Nanotechnology. 25: 245602. PMID 24869600 DOI: 10.1088/0957-4484/25/24/245602 |
0.418 |
|
| 2014 |
Xu Q, Piermarocchi C, Pershin YV, Salamo GJ, Xiao M, Wang X, Shih CK. Giant up-conversion efficiency of InGaAs quantum dots in a planar microcavity. Scientific Reports. 4: 3953. PMID 24492329 DOI: 10.1038/Srep03953 |
0.453 |
|
| 2014 |
Li X, Wu J, Wang ZM, Liang B, Lee J, Kim ES, Salamo GJ. Origin of nanohole formation by etching based on droplet epitaxy. Nanoscale. 6: 2675-81. PMID 24445506 DOI: 10.1039/C3Nr06064K |
0.5 |
|
| 2014 |
Mazur YI, Dorogan VG, de Souza LD, Fan D, Benamara M, Schmidbauer M, Ware ME, Tarasov GG, Yu SQ, Marques GE, Salamo GJ. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures. Nanotechnology. 25: 035702. PMID 24346504 DOI: 10.1088/0957-4484/25/3/035702 |
0.701 |
|
| 2014 |
Kovalova MS, Kondratenko SV, Furrow CS, Kunets VP, Ware ME, Salamo GJ. Photo-voltage in InGaAs/GaAs heterostructures with one-dimensional nanostructures Proceedings of Spie. 9126. DOI: 10.1117/12.2051881 |
0.448 |
|
| 2014 |
Grant PC, Fan D, Mosleh A, Yu SQ, Dorogan VG, Hawkridge ME, Mazur YI, Benamara M, Salamo GJ, Johnson SR. Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4868110 |
0.673 |
|
| 2014 |
Lopes-Oliveira V, Mazur YI, De Souza LD, Marçal LAB, Wu J, Teodoro MD, Malachias A, Dorogan VG, Benamara M, Tarasov GG, Marega E, Marques GE, Wang ZM, Orlita M, Salamo GJ, et al. Structural and magnetic confinement of holes in the spin-polarized emission of coupled quantum ring-quantum dot chains Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.125315 |
0.709 |
|
| 2014 |
Kuchuk AV, Stanchu HV, Li C, Ware ME, Mazur YI, Kladko VP, Belyaev AE, Salamo GJ. Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction Journal of Applied Physics. 116. DOI: 10.1063/1.4904083 |
0.333 |
|
| 2014 |
Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains Journal of Applied Physics. 116. DOI: 10.1063/1.4902311 |
0.727 |
|
| 2014 |
Kunets VP, Furrow CS, Ware ME, Souza LDd, Benamara M, Mortazavi M, Salamo GJ. Band filling effects on temperature performance of intermediate band quantum wire solar cells Journal of Applied Physics. 116: 83102. DOI: 10.1063/1.4893898 |
0.399 |
|
| 2014 |
Yerino CD, Simmonds PJ, Liang B, Dorogan VG, Ware ME, Mazur YI, Jung D, Huffaker DL, Salamo GJ, Lee ML. Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap Applied Physics Letters. 105. DOI: 10.1063/1.4893747 |
0.718 |
|
| 2014 |
Mazur YI, Teodoro MD, Dias De Souza L, Ware ME, Fan D, Yu SQ, Tarasov GG, Marques GE, Salamo GJ. Low temperature magneto-photoluminescence of GaAsBi /GaAs quantum well heterostructures Journal of Applied Physics. 115. DOI: 10.1063/1.4869803 |
0.418 |
|
| 2014 |
Chen S, Tang M, Jiang Q, Wu J, Dorogan VG, Benamara M, Mazur YI, Salamo GJ, Smowton P, Seeds A, Liu H. InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate Acs Photonics. 1: 638-642. DOI: 10.1021/Ph500162A |
0.666 |
|
| 2014 |
Golovynskyi SL, Mazur YI, Wang ZM, Ware ME, Vakulenko OV, Tarasov GG, Salamo GJ. Excitation intensity dependence of lateral photocurrent in InGaAs/GaAs dot-chain structures Physics Letters, Section a: General, Atomic and Solid State Physics. 378: 2622-2626. DOI: 10.1016/J.Physleta.2014.07.010 |
0.473 |
|
| 2014 |
Lam P, Hatch S, Wu J, Tang M, Dorogan VG, Mazur YI, Salamo GJ, Ramiro I, Seeds A, Liu H. Voltage recovery in charged InAs/GaAs quantum dot solar cells Nano Energy. 6: 159-166. DOI: 10.1016/J.Nanoen.2014.03.016 |
0.71 |
|
| 2014 |
Teodoro MD, Campo VL, Lopez-Richard V, Marega E, Marques GE, Salamo GJ. Aharonov-bohm effect for neutral excitons in quantum rings Nanoscience and Technology. 87: 247-265. DOI: 10.1007/978-3-642-39197-2_10 |
0.336 |
|
| 2013 |
Chen X, Salamo GJ, Yang G, Li Y, Ding X, Gao Y, Liu Q, Guo J. Multiphoton near-infrared quantum cutting luminescence phenomena of Tm3+ ion in (Y1-xTm(x))3Al5O12 powder phosphor. Optics Express. 21: A829-40. PMID 24104578 DOI: 10.1364/Oe.21.00A829 |
0.384 |
|
| 2013 |
Simmonds PJ, Yerino CD, Sun M, Liang B, Huffaker DL, Dorogan VG, Mazur Y, Salamo G, Lee ML. Tuning quantum dot luminescence below the bulk band gap using tensile strain. Acs Nano. 7: 5017-23. PMID 23701255 DOI: 10.1021/Nn400395Y |
0.705 |
|
| 2013 |
Chen X, Li S, Salamo GJ, Yang X, Hu L, Yu C, Zhou J, Huang J. Multiphoton near-infrared quantum cutting luminescence of Yb3+ ion cooperative energy transferred from the oxyfluoride vitroceramics phosphor matrix. Optics Letters. 38: 1530-2. PMID 23632541 DOI: 10.1364/Ol.38.001530 |
0.36 |
|
| 2013 |
Lin A, Liang BL, Dorogan VG, Mazur YI, Tarasov GG, Salamo GJ, Huffaker DL. Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure. Nanotechnology. 24: 075701. PMID 23358560 DOI: 10.1088/0957-4484/24/7/075701 |
0.719 |
|
| 2013 |
Wu J, Wang ZM, Dorogan VG, Li S, Lee J, Mazur YI, Kim ES, Salamo GJ. Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells. Nanoscale Research Letters. 8: 5. PMID 23281811 DOI: 10.1186/1556-276X-8-5 |
0.706 |
|
| 2013 |
Gao L, Chen G, Wu J, Wang ZM, Salamo GJ. Step bunching formation on GaAs(001) introduced by surface reconstruction Journal of Nanoelectronics and Optoelectronics. 8: 450-453. DOI: 10.1166/Jno.2013.1512 |
0.339 |
|
| 2013 |
Fan D, Grant PC, Yu SQ, Dorogan VG, Hu X, Zeng Z, Li C, Hawkridge ME, Benamara M, Mazur YI, Salamo GJ, Johnson SR, Wang ZM. MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4792518 |
0.742 |
|
| 2013 |
Zhou XR, Lee JH, Salamo GJ, Royo M, Climente JI, Doty MF. Coulomb interaction signatures in self-assembled lateral quantum dot molecules Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.125309 |
0.453 |
|
| 2013 |
Belyaev AE, Strelchuk VV, Nikolenko AS, Romanyuk AS, Mazur YI, Ware ME, DeCuir EA, Salamo GJ. Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopy Semiconductor Science and Technology. 28: 105011. DOI: 10.1088/0268-1242/28/10/105011 |
0.366 |
|
| 2013 |
Mazur YI, Dorogan VG, Benamara M, Ware ME, Schmidbauer M, Tarasov GG, Johnson SR, Lu X, Yu SQ, Tiedje T, Salamo GJ. Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/6/065306 |
0.682 |
|
| 2013 |
Ferri FA, Kunets VP, Salamo GJ, Marega E. Ordering ferromagnetic In1-xMnxAs quantum dots Aip Conference Proceedings. 1566: 357-358. DOI: 10.1063/1.4848433 |
0.425 |
|
| 2013 |
Zeng Z, Morgan TA, Fan D, Li C, Hirono Y, Hu X, Zhao Y, Lee JS, Wang J, Wang ZM, Yu S, Hawkridge ME, Benamara M, Salamo GJ. Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction Aip Advances. 3. DOI: 10.1063/1.4815972 |
0.376 |
|
| 2013 |
Kunets VP, Dias MRS, Rembert T, Ware ME, Mazur YI, Lopez-Richard V, Mantooth HA, Marques GE, Salamo GJ. Electron transport in quantum dot chains: Dimensionality effects and hopping conductance Journal of Applied Physics. 113. DOI: 10.1063/1.4804324 |
0.446 |
|
| 2013 |
Guzun D, Mazur YI, Dorogan VG, Ware ME, Marega E, Tarasov GG, Lienau C, Salamo GJ. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures Journal of Applied Physics. 113. DOI: 10.1063/1.4801891 |
0.712 |
|
| 2013 |
Mazur YI, Dorogan VG, Schmidbauer M, Tarasov GG, Johnson SR, Lu X, Ware ME, Yu SQ, Tiedje T, Salamo GJ. Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples Journal of Applied Physics. 113. DOI: 10.1063/1.4801429 |
0.709 |
|
| 2013 |
Mazur YI, Dorogan VG, Marega E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures Journal of Applied Physics. 113. DOI: 10.1063/1.4779686 |
0.728 |
|
| 2013 |
Liang B, Wong PS, Tran T, Dorogan VG, Mazur YI, Ware ME, Salamo GJ, Shih CK, Huffaker DL. Site-controlled formation of InGaAs quantum nanostructures-Tailoring the dimensionality and the quantum confinement Nano Research. 6: 235-242. DOI: 10.1007/S12274-013-0299-5 |
0.731 |
|
| 2013 |
Fan D, Zeng Z, Dorogan VG, Hirono Y, Li C, Mazur YI, Yu SQ, Johnson SR, Wang ZM, Salamo GJ. Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy Journal of Materials Science: Materials in Electronics. 24: 1635-1639. DOI: 10.1007/S10854-012-0987-Z |
0.71 |
|
| 2013 |
Wu J, Hirono Y, Li X, Wang ZM, Lee J, Benamara M, Luo S, Mazur YI, Kim ES, Salamo GJ. Self-Assembly of Multiple Stacked Nanorings by Vertically Correlated Droplet Epitaxy Advanced Functional Materials. 24: 530-535. DOI: 10.1002/Adfm.201302032 |
0.341 |
|
| 2012 |
Mazur YI, Dorogan VG, Ware ME, Marega E, Benamara M, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. State filling dependent luminescence in hybrid tunnel coupled dot-well structures. Nanoscale. 4: 7509-16. PMID 23099560 DOI: 10.1039/C2Nr32477F |
0.694 |
|
| 2012 |
Li MY, Hirono Y, Koukourinkova SD, Sui M, Song S, Kim ES, Lee J, Salamo GJ. Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy. Nanoscale Research Letters. 7: 550. PMID 23033893 DOI: 10.1186/1556-276X-7-550 |
0.344 |
|
| 2012 |
Creasey M, Lee JH, Wang Z, Salamo GJ, Li X. Self-assembled InGaAs quantum dot clusters with controlled spatial and spectral properties. Nano Letters. 12: 5169-74. PMID 22992172 DOI: 10.1021/Nl3021736 |
0.472 |
|
| 2012 |
Kladko V, Kuchuk A, Lytvyn P, Yefanov O, Safriuk N, Belyaev A, Mazur YI, Decuir EA, Ware ME, Salamo GJ. Substrate effects on the strain relaxation in GaN/AlN short-period superlattices. Nanoscale Research Letters. 7: 289. PMID 22672771 DOI: 10.1186/1556-276X-7-289 |
0.35 |
|
| 2012 |
Liang BL, Wang ZhM, Mazur YI, Seydmohamadi Sh, Ware ME, Salamo GJ. Tuning the optical performance of surface quantum dots in InGaAs/GaAs hybrid structures. Optics Express. 15: 8157-62. PMID 19547142 DOI: 10.1364/Oe.15.008157 |
0.513 |
|
| 2012 |
Gao L, Hirono Y, Li M, Wu J, Song S, Koo S, Kim E, Wang ZM, Lee J, Salamo GJ. Observation of Ga Metal Droplet Formation on Photolithographically Patterned GaAs (100) Surface by Droplet Epitaxy Ieee Transactions On Nanotechnology. 11: 985-991. DOI: 10.1109/Tnano.2012.2207966 |
0.342 |
|
| 2012 |
Lu X, Zhou H, Salamo GJ, Tian ZR, Xiao M. Generation of exciton-polaritons in ZnO microcrystallines using second-harmonic generation New Journal of Physics. 14. DOI: 10.1088/1367-2630/14/7/073017 |
0.355 |
|
| 2012 |
Kondratenko SV, Vakulenko OV, Kunets VP, Mazur YI, Dorogan VG, Ware ME, Salamo GJ. Photoconductivity peculiarities in InGaAs quantum wire heterostructures: Anisotropy and high photoresponsivity at room temperature Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/10/105024 |
0.703 |
|
| 2012 |
Fan D, Zeng Z, Hu X, Dorogan VG, Li C, Benamara M, Hawkridge ME, Mazur YI, Yu SQ, Johnson SR, Wang ZM, Salamo GJ. Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4764556 |
0.686 |
|
| 2012 |
Mazur YI, Dorogan VG, Ware ME, Marega E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures Journal of Applied Physics. 112. DOI: 10.1063/1.4759318 |
0.719 |
|
| 2012 |
Li S, Ware ME, Wu J, Kunets VP, Hawkridge M, Minor P, Wang Z, Wu Z, Jiang Y, Salamo GJ. Polarization doping: Reservoir effects of the substrate in AlGaN graded layers Journal of Applied Physics. 112: 053711. DOI: 10.1063/1.4750039 |
0.346 |
|
| 2012 |
Wu J, Wang ZM, Li AZ, Benamara M, Lee J, Koukourinkova SD, Kim ES, Salamo GJ. Critical size of self-propelled motion of droplets on GaAs (100) surface Journal of Applied Physics. 112: 43523. DOI: 10.1063/1.4749401 |
0.361 |
|
| 2012 |
Ferri FA, Coelho LN, Kunets VP, Salamo GJ, Marega E. Structural, morphological, and magnetic characterization of In 1-xMn xAs quantum dots grown by molecular beam epitaxy Journal of Applied Physics. 112. DOI: 10.1063/1.4745904 |
0.5 |
|
| 2012 |
Wu J, Wang ZM, Dorogan VG, Li S, Zhou Z, Li H, Lee J, Kim ES, Mazur YI, Salamo GJ. Strain-free ring-shaped nanostructures by droplet epitaxy for photovoltaic application Applied Physics Letters. 101. DOI: 10.1063/1.4738996 |
0.702 |
|
| 2012 |
Kunets VP, Furrow CS, Morgan TA, Hirono Y, Ware ME, Dorogan VG, Mazur YI, Salamo GJ. InGaAs quantum wire intermediate band solar cell Applied Physics Letters. 101. DOI: 10.1063/1.4737944 |
0.678 |
|
| 2012 |
Teodoro MD, Malachias A, Lopes-Oliveira V, Cesar DF, Lopez-Richard V, Marques GE, Marega E, Benamara M, Mazur YI, Salamo GJ. In-plane mapping of buried InGaAs quantum rings and hybridization effects on the electronic structure Journal of Applied Physics. 112: 14319. DOI: 10.1063/1.4733964 |
0.419 |
|
| 2012 |
Wu J, Wang ZM, Holmes K, Marega E, Zhou Z, Li H, Mazur YI, Salamo GJ. Laterally aligned quantum rings: From one-dimensional chains to two-dimensional arrays Applied Physics Letters. 100: 203117. DOI: 10.1063/1.4719519 |
0.5 |
|
| 2012 |
Mazur YI, Dorogan VG, Salamo GJ, Tarasov GG, Liang BL, Reyner CJ, Nunna K, Huffaker DL. Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures Applied Physics Letters. 100. DOI: 10.1063/1.3676274 |
0.719 |
|
| 2012 |
Lourenço SA, Teodoro MD, González-Borrero PP, Dias IFL, Duarte JL, Marega E, Salamo GJ. Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (1 0 0) and (3 1 1)A GaAs surfaces Physica B-Condensed Matter. 407: 2131-2135. DOI: 10.1016/J.Physb.2012.02.020 |
0.413 |
|
| 2012 |
Chen X, Yang G, Li S, Ohtsuka M, Naruhito S, Liu J, Chen L, Salamo GJ. Experiments and analysis of infrared quantum cutting luminescence phenomena of Ho3+/Yb3+ codoped nanophase oxyfluoride vitroceramics Optics Communications. 285: 5247-5253. DOI: 10.1016/J.Optcom.2012.08.035 |
0.351 |
|
| 2012 |
Li Z, Qin H, Guzun D, Benamara M, Salamo G, Peng X. Uniform thickness and colloidal-stable CdS quantum disks with tunable thickness: Synthesis and properties Nano Research. 5: 337-351. DOI: 10.1007/S12274-012-0214-5 |
0.43 |
|
| 2012 |
Wu J, Wang ZM, Holmes K, Marega E, Mazur YI, Salamo GJ. Ordered quantum-ring chains grown on a quantum-dot superlattice template Journal of Nanoparticle Research. 14. DOI: 10.1007/S11051-012-0919-0 |
0.495 |
|
| 2012 |
Wu J, Wang ZM, Li S, Lee J, Mazur YI, Salamo GJ. Influence of Ga coverage on the sizes of GaAs quantum dash pairs grown by high temperature droplet epitaxy Physica Status Solidi - Rapid Research Letters. 6: 309-311. DOI: 10.1002/Pssr.201206236 |
0.508 |
|
| 2012 |
Li S, Wu J, Wang Z, Li Z, Su Y, Wu Z, Jiang Y, Salamo GJ. Thermal etching process of microscale pits on the GaAs(001) surface Physica Status Solidi-Rapid Research Letters. 6: 25-27. DOI: 10.1002/Pssr.201105482 |
0.406 |
|
| 2012 |
Li M, Lee J, Wang Z, Hirono Y, Wu J, Song S, Koo S, Kim E, Salamo GJ. Inside Back Cover: Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment (Phys. Status Solidi A 6/2012) Physica Status Solidi (a). 209: n/a-n/a. DOI: 10.1002/Pssa.201290013 |
0.32 |
|
| 2012 |
Li M, Lee J, Wang Z, Hirono Y, Wu J, Song S, Koo S, Kim E, Salamo GJ. Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment Physica Status Solidi (a). 209: 1075-1079. DOI: 10.1002/Pssa.201127692 |
0.349 |
|
| 2011 |
Villegas-Lelovsky L, Teodoro MD, Lopez-Richard V, Calseverino C, Malachias A, Marega E, Liang BL, Mazur YI, Marques GE, Trallero-Giner C, Salamo GJ. Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots. Nanoscale Research Letters. 6: 56. PMID 27502678 DOI: 10.1007/S11671-010-9786-8 |
0.517 |
|
| 2011 |
Mazur YI, Dorogan VG, Schmidbauer M, Tarasov GG, Johnson SR, Lu X, Yu SQ, Wang ZhM, Tiedje T, Salamo GJ. Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure. Nanotechnology. 22: 375703. PMID 21852736 DOI: 10.1088/0957-4484/22/37/375703 |
0.706 |
|
| 2011 |
Duchesne D, Rutkowska KA, Volatier M, Légaré F, Delprat S, Chaker M, Modotto D, Locatelli A, De Angelis C, Sorel M, Christodoulides DN, Salamo G, Arès R, Aimez V, Morandotti R. Second harmonic generation in AlGaAs photonic wires using low power continuous wave light. Optics Express. 19: 12408-17. PMID 21716479 DOI: 10.1364/Oe.19.012408 |
0.331 |
|
| 2011 |
Wu J, Wang ZM, Li AZ, Benamara M, Li S, Salamo GJ. Nanoscale footprints of self-running gallium droplets on GaAs surface. Plos One. 6: e20765. PMID 21673965 DOI: 10.1371/Journal.Pone.0020765 |
0.353 |
|
| 2011 |
Wu J, Wang ZM, Li AZ, Benamara M, Salamo GJ. On the secondary droplets of self-running gallium droplets on GaAs surface. Acs Applied Materials & Interfaces. 3: 1817-20. PMID 21595449 DOI: 10.1021/Am200538X |
0.376 |
|
| 2011 |
Wu J, Wang ZM, Dorogan VG, Li S, Mazur YI, Salamo GJ. Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces. Nanoscale. 3: 1485-8. PMID 21384043 DOI: 10.1039/C0Nr00973C |
0.742 |
|
| 2011 |
Wu J, Wang ZM, Li AZ, Zeng Z, Li S, Chen G, Salamo GJ. Formation of GaAs double rings through gallium migration and nanodrilling Journal of Nanoelectronics and Optoelectronics. 6: 58-61. DOI: 10.1166/Jno.2011.1133 |
0.312 |
|
| 2011 |
Lee J, Wang ZM, Hirono Y, Dorogan VG, Mazur YI, Kim ES, Koo SM, Park S, Song S, Salamo GJ. Low-density quantum dot molecules by selective etching using in droplet as a mask Ieee Transactions On Nanotechnology. 10: 600-605. DOI: 10.1109/Tnano.2010.2056695 |
0.691 |
|
| 2011 |
Lee J, Wang ZM, Kim E, Kim N, Park S, Salamo GJ. Evolution of Self-Assembled InGaAs Tandem Nanostructures Consisting a Hole and Pyramid on Type-A High-Index GaAs Substrates by Droplet Epitaxy Ieee Transactions On Nanotechnology. 10: 395-401. DOI: 10.1109/Tnano.2010.2042725 |
0.386 |
|
| 2011 |
Zhou X, Sanwlani S, Liu W, Lee JH, Wang ZM, Salamo G, Doty MF. Spectroscopic signatures of many-body interactions and delocalized states in self-assembled lateral quantum dot molecules Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.205411 |
0.49 |
|
| 2011 |
Cesar DF, Teodoro MD, Lopez-Richard V, Marques GE, Marega E, Dorogan VG, Mazur YI, Salamo GJ. Carrier transfer in the optical recombination of quantum dots Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.195307 |
0.716 |
|
| 2011 |
Kladko VP, Kuchuk AV, Safryuk NV, MacHulin VF, Lytvyn PM, Raicheva VG, Belyaev AE, Mazur YI, DeCuir EA, Ware ME, Manasreh MO, Salamo GJ. Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray study Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/2/025403 |
0.392 |
|
| 2011 |
Lee J, Wang Z, Hirono Y, Kim ES, Koo SM, Dorogan VG, Mazur YI, Song S, Park G, Salamo GJ. InGaAs quantum dot molecules during selective etching using an in droplet mask Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/2/025102 |
0.703 |
|
| 2011 |
Li C, Zeng ZQ, Fan DS, Hirono Y, Wu J, Morgan TA, Hu X, Yu SQ, Wang ZM, Salamo GJ. Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy Applied Physics Letters. 99. DOI: 10.1063/1.3666036 |
0.376 |
|
| 2011 |
Kunets VP, Prosandeev S, Mazur YI, Ware ME, Teodoro MD, Dorogan VG, Lytvyn PM, Salamo GJ. Isotropic Hall effect and "freeze-in" of carriers in the InGaAs self-assembled quantum wires Journal of Applied Physics. 110. DOI: 10.1063/1.3656455 |
0.708 |
|
| 2011 |
Mazur YI, Dorogan VG, Marega E, Tarasov GG, Salamo GJ. Spectroscopic signature of strain-induced quantum dots created by buried InAs quantum dots in an InGaAs quantum well Journal of Applied Physics. 110. DOI: 10.1063/1.3634118 |
0.73 |
|
| 2011 |
Strelchuk VV, Bryksa VP, Avramenko KA, Valakh MY, Belyaev AE, Mazur YI, Ware ME, DeCuir EA, Salamo GJ. Confocal Raman depth-scanning spectroscopic study of phonon−plasmon modes in GaN epilayers Journal of Applied Physics. 109: 123528. DOI: 10.1063/1.3599892 |
0.355 |
|
| 2011 |
Dubslaff M, Hanke M, Burghammer M, Schöder S, Hoppe R, Schroer CG, Mazur YI, Wang ZM, Lee JH, Salamo GJ. In(Ga)As/GaAs(001) quantum dot molecules probed by nanofocus high resolution x-ray diffraction with 100 nm resolution Applied Physics Letters. 98. DOI: 10.1063/1.3593960 |
0.478 |
|
| 2011 |
Dvoyan KG, Kazaryan EM, Tshantshapanyan AA, Wang ZM, Salamo GJ. Electronic states and light absorption in quantum dot molecule Applied Physics Letters. 98. DOI: 10.1063/1.3592258 |
0.413 |
|
| 2011 |
Mazur YI, Dorogan VG, Marega E, Benamara M, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures Applied Physics Letters. 98. DOI: 10.1063/1.3560063 |
0.72 |
|
| 2011 |
Saini V, Li Z, Bourdo S, Kunets VP, Trigwell S, Couraud A, Rioux J, Boyer C, Nteziyaremye V, Dervishi E, Biris AR, Salamo GJ, Viswanathan T, Biris AS. Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions Journal of Applied Physics. 109. DOI: 10.1063/1.3531112 |
0.314 |
|
| 2011 |
Wu J, Lee S, Reddy VR, Manasreh MO, Weaver BD, Yakes MK, Furrow CS, Kunets VP, Benamara M, Salamo GJ. Photoluminescence plasmonic enhancement in InAs quantum dots coupled to gold nanoparticles Materials Letters. 65: 3605-3608. DOI: 10.1016/J.Matlet.2011.08.019 |
0.415 |
|
| 2011 |
Dorogan VG, Wang ZM, Kunets VP, Schmidbauer M, Xie YZ, Teodoro MD, Lytvyn PM, Mazur YI, Salamo GJ. Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces Materials Letters. 65: 1427-1430. DOI: 10.1016/J.Matlet.2011.02.023 |
0.698 |
|
| 2011 |
Wu J, Wang ZM, Dorogan VG, Mazur YI, Li S, Salamo GJ. Insight into optical properties of strain-free quantum dot pairs Journal of Nanoparticle Research. 13: 947-952. DOI: 10.1007/S11051-010-0219-5 |
0.732 |
|
| 2011 |
Strelchuk VV, Bryksa VP, Avramenko KA, Valakh MY, Belyaev AE, Mazur YI, Ware ME, DeCuir EA, Salamo GJ. Confocal Raman depth‐profile analysis of the electrical and structural properties in III‐nitride structures Physica Status Solidi (C). 8: 2188-2190. DOI: 10.1002/Pssc.201001077 |
0.322 |
|
| 2011 |
Lee J, Wang Z, Yazdanpanah V, Kim E, Koo S, Salamo GJ. Inside Back Cover: InxGa1−xAs quantum wire network-like and ordered checker board-like nanostructures on GaAs (311) by low In composition multi-layer stacking (Phys. Status Solidi A 1/2011) Physica Status Solidi (a). 208: n/a-n/a. DOI: 10.1002/Pssa.201190001 |
0.423 |
|
| 2010 |
He J, Reyner CJ, Liang BL, Nunna K, Huffaker DL, Pavarelli N, Gradkowski K, Ochalski TJ, Huyet G, Dorogan VG, Mazur YI, Salamo GJ. Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition. Nano Letters. 10: 3052-6. PMID 20698619 DOI: 10.1021/Nl102237N |
0.703 |
|
| 2010 |
Wang ZM, Xie YZ, Kunets VP, Dorogan VG, Mazur YI, Salamo GJ. Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates. Nanoscale Research Letters. 5: 1320-3. PMID 20676193 DOI: 10.1007/S11671-010-9645-7 |
0.734 |
|
| 2010 |
Li Z, Wu J, Wang ZM, Fan D, Guo A, Li S, Yu SQ, Manasreh O, Salamo GJ. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications. Nanoscale Research Letters. 5: 1079-84. PMID 20672090 DOI: 10.1007/S11671-010-9605-2 |
0.675 |
|
| 2010 |
Mazur YI, Dorogan V, Marega E, Cesar D, Lopez-Richard V, Marques G, Zhuchenko ZY, Tarasov G, Salamo G. Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures. Nanoscale Research Letters. 5: 991-1001. PMID 20672035 DOI: 10.1007/S11671-010-9590-5 |
0.704 |
|
| 2010 |
Teodoro MD, Campo VL, Lopez-Richard V, Marega E, Marques GE, Gobato YG, Iikawa F, Brasil MJ, Abuwaar ZY, Dorogan VG, Mazur YI, Benamara M, Salamo GJ. Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields. Physical Review Letters. 104: 086401. PMID 20366953 DOI: 10.1103/Physrevlett.104.086401 |
0.695 |
|
| 2010 |
Wu J, Shao D, Dorogan VG, Li AZ, Li S, DeCuir EA, Manasreh MO, Wang ZM, Mazur YI, Salamo GJ. Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy. Nano Letters. 10: 1512-6. PMID 20356102 DOI: 10.1021/Nl100217K |
0.739 |
|
| 2010 |
Wu J, Shao D, Manasreh O, Li AZ, Wang ZM, Salamo GJ. Photodetectors fabricated from strain-free GaAs coupled quantum dots Materials Research Society Symposium Proceedings. 1208: 19-25. DOI: 10.1557/Proc-1208-O04-04 |
0.51 |
|
| 2010 |
Christodoulides DN, Khoo IC, Salamo GJ, Stegeman GI, Van Stryland EW. Nonlinear refraction and absorption: Mechanisms and magnitudes Advances in Optics and Photonics. 2: 60-200. DOI: 10.1364/Aop.2.000060 |
0.315 |
|
| 2010 |
Muller A, Flagg EB, Deppe DG, Salamo GJ, Shih CK. Coherently controlled quantum emitters in cavities Proceedings of Spie - the International Society For Optical Engineering. 7611. DOI: 10.1117/12.847066 |
0.379 |
|
| 2010 |
Lee J, Wang ZM, Dorogan VG, Mazur YI, Salamo GJ. Evolution of various nanostructures and preservation of self-assembled InAs quantum dots during GaAs capping Ieee Transactions On Nanotechnology. 9: 149-156. DOI: 10.1109/Tnano.2009.2028735 |
0.74 |
|
| 2010 |
Mazur YI, Dorogan VG, Guzun D, Marega E, Salamo GJ, Tarasov GG, Govorov AO, Vasa P, Lienau C. Measurement of coherent tunneling between InGaAs quantum wells and InAs quantum dots using photoluminescence spectroscopy Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.155413 |
0.725 |
|
| 2010 |
Cesar DF, Teodoro MD, Tsuzuki H, Lopez-Richard V, Marques GE, Rino JP, Lourenco SA, Marega E, Dias IFL, Duarte JL, Gonzalez-Borrero PP, Salamo GJ. Contrasting LH-HH subband splitting of strained quantum wells grown along [001] and [113] directions Physical Review B. 81: 233301. DOI: 10.1103/Physrevb.81.233301 |
0.438 |
|
| 2010 |
Zeng Z, Liu Y, Yuan H, Mei Z, Du X, Jia J, Xue Q, Zhang Z, Salamo GJ. Controlled growth of Zn-polar ZnO film on MgAl2O4 (1 1 1) substrate using MgO buffer layer Journal of Physics D. 43: 85301. DOI: 10.1088/0022-3727/43/8/085301 |
0.335 |
|
| 2010 |
Kunets VP, Teodoro MD, Dorogan VG, Lytvyn PM, Tarasov GG, Sleezer R, Ware ME, Mazur YI, Krasinski JS, Salamo GJ. Interface roughness scattering in laterally coupled InGaAs quantum wires Applied Physics Letters. 97. DOI: 10.1063/1.3532098 |
0.808 |
|
| 2010 |
Mazur YI, Dorogan VG, Marega E, Zhuchenko ZY, Ware ME, Benamara M, Tarasov GG, Vasa P, Lienau C, Salamo GJ. Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures Journal of Applied Physics. 108. DOI: 10.1063/1.3493240 |
0.722 |
|
| 2010 |
Sablon KA, Little JW, Olver KA, Wang ZM, Dorogan VG, Mazur YI, Salamo GJ, Towner FJ. Effects of AlGaAs energy barriers on InAs/GaAs quantum dot solar cells Journal of Applied Physics. 108. DOI: 10.1063/1.3486014 |
0.818 |
|
| 2010 |
Dobbert J, Tran L, Hatami F, Masselink WT, Kunets VP, Salamo GJ. Low frequency noise in InSb/GaAs and InSb/Si channels Applied Physics Letters. 97: 102101. DOI: 10.1063/1.3483233 |
0.309 |
|
| 2010 |
Creasey M, Li X, Lee JH, Wang ZM, Salamo GJ. Strongly confined excitons in self-assembled InGaAs quantum dot clusters produced by a hybrid growth method Journal of Applied Physics. 107. DOI: 10.1063/1.3369389 |
0.483 |
|
| 2010 |
Bozkurt M, Grant VA, Ulloa JM, Campion RP, Foxon CT, Marega E, Salamo GJ, Koenraad PM. Atomic scale characterization of Mn doped InAs/GaAs quantum dots Applied Physics Letters. 96. DOI: 10.1063/1.3293296 |
0.465 |
|
| 2010 |
Wang ZM, Kunets VP, Xie YZ, Schmidbauer M, Dorogan VG, Mazur YI, Salamo GJ. Multilayer self-organization of InGaAs quantum wires on GaAs surfaces Physics Letters, Section a: General, Atomic and Solid State Physics. 375: 170-173. DOI: 10.1016/J.Physleta.2010.10.051 |
0.709 |
|
| 2010 |
Li AZ, Wang ZM, Wu J, Salamo GJ. Holed nanostructures formed by aluminum droplets on a GaAs substrate Nano Research. 3: 490-495. DOI: 10.1007/S12274-010-0009-5 |
0.379 |
|
| 2010 |
Wu J, Wang ZM, Li AZ, Li S, Salamo GJ. Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces Physica Status Solidi - Rapid Research Letters. 4: 371-373. DOI: 10.1002/Pssr.201004402 |
0.379 |
|
| 2010 |
Lee J, Wang Z, Yazdanpanah V, Kim E, Koo S, Salamo GJ. InxGa1−xAs quantum wire network-like and ordered checker board-like nanostructures on GaAs (311) by low In composition multi-layer stacking Physica Status Solidi (a). 208: 47-51. DOI: 10.1002/Pssa.201026611 |
0.439 |
|
| 2009 |
Lee J, Wang ZhM, Kim E, Kim N, Park Sh, Salamo G. Various Quantum- and Nano-Structures by III-V Droplet Epitaxy on GaAs Substrates. Nanoscale Research Letters. 5: 308-14. PMID 20671787 DOI: 10.1007/S11671-009-9481-9 |
0.527 |
|
| 2009 |
Guo A, Salamo GJ, Duchesne D, Morandotti R, Volatier-Ravat M, Aimez V, Siviloglou GA, Christodoulides DN. Observation of PT-symmetry breaking in complex optical potentials. Physical Review Letters. 103: 093902. PMID 19792798 DOI: 10.1103/Physrevlett.103.093902 |
0.488 |
|
| 2009 |
Lee JH, Wang ZM, Kim NY, Salamo GJ. Size and density control of in droplets at near room temperatures Nanotechnology. 20. PMID 19550019 DOI: 10.1088/0957-4484/20/28/285602 |
0.357 |
|
| 2009 |
Liang BL, Dorogan VG, Mazur YI, Strom NW, Lee JH, Sablon KA, Wang ZhM, Salamo GJ. InAs quantum dot clusters grown on GaAs droplet templates: surface morphologies and optical properties. Journal of Nanoscience and Nanotechnology. 9: 3320-4. PMID 19453010 DOI: 10.1166/Jnn.2009.Vc11 |
0.82 |
|
| 2009 |
Mazur YI, Dorogan VG, Bierwagen O, Tarasov GG, DeCuir EA, Noda S, Zhuchenko ZY, Manasreh MO, Masselink WT, Salamo GJ. Spectroscopy of shallow InAs/InP quantum wire nanostructures. Nanotechnology. 20: 065401. PMID 19417384 DOI: 10.1088/0957-4484/20/6/065401 |
0.707 |
|
| 2009 |
Flagg EB, Robertson JW, Founta S, Ma W, Xiao M, Salamo GJ, Shih CK. Direct evidence of interlevel exciton transitions mediated by single phonons in a semiconductor quantum dot using resonance fluorescence spectroscopy. Physical Review Letters. 102: 097402. PMID 19392564 DOI: 10.1103/Physrevlett.102.097402 |
0.461 |
|
| 2009 |
Shao D, Wu J, Li Z, Manasreh O, Kunets VP, Wang ZM, Salamo GJ. Quantum Ring Infrared Photodetector Based On Droplet Epitaxy Technique Mrs Proceedings. 1208. DOI: 10.1557/Proc-1208-O09-24 |
0.476 |
|
| 2009 |
Wu J, Shao D, Manasreh O, Li AZ, Wang ZM, Salamo GJ. Photodetectors Fabricated from Strain-free GaAs Coupled Quantum Dots Mrs Proceedings. 1208. DOI: 10.1557/PROC-1208-O04-04 |
0.406 |
|
| 2009 |
Lee JH, Wang ZM, Salamo GJ. The control on size and density of InAs QDs by droplet epitaxy (april 2009) Ieee Transactions On Nanotechnology. 8: 431-436. DOI: 10.1109/Tnano.2009.2021654 |
0.434 |
|
| 2009 |
Kunets VP, Easwaran S, Black WT, Guzun D, Mazur YI, Goel N, Mishima TD, Santos MB, Salamo GJ. InSb quantum-well-based micro-hall devices: Potential for pT Detectivity Ieee Transactions On Electron Devices. 56: 683-687. DOI: 10.1109/Ted.2009.2014187 |
0.359 |
|
| 2009 |
Mazur YI, Dorogan VG, Marega E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. One-dimensional features of In(Ga)As/GaAs dot chain structures with changeable interdot coupling New Journal of Physics. 11. DOI: 10.1088/1367-2630/11/4/043022 |
0.687 |
|
| 2009 |
Lee JH, Wang ZM, Dorogan VG, Mazur YI, Ware ME, Salamo GJ. Tuning the emission profiles of various self-assembled Inx Ga1-x As nanostructures by rapid thermal annealing Journal of Applied Physics. 106. DOI: 10.1063/1.3213095 |
0.721 |
|
| 2009 |
Wu J, Shao D, Li Z, Manasreh MO, Kunets VP, Wang ZM, Salamo GJ. Intermediate-band material based on GaAs quantum rings for solar cells Applied Physics Letters. 95: 071908. DOI: 10.1063/1.3211971 |
0.42 |
|
| 2009 |
Hanke M, Dubslaff M, Schmidbauer M, Wang ZM, Mazur YI, Lytvyn PM, Lee JH, Salamo GJ. On the complex behavior of strain relaxation in (In,Ga)As/GaAs(001) quantum dot molecules Applied Physics Letters. 95: 023103. DOI: 10.1063/1.3176409 |
0.49 |
|
| 2009 |
Dorogan VG, Mazur YI, Marega E, Tarasov GG, Ware ME, Salamo GJ. Hybridized quantum dot-wetting layer states in photoluminescence of In(Ga)As/GaAs dot chain samples Journal of Applied Physics. 105. DOI: 10.1063/1.3151707 |
0.7 |
|
| 2009 |
Hanke M, Schmidbauer M, Wang ZM, Mazur YI, Seydmohamadi S, Salamo GJ, Mishima TD, Johnson MB. Peculiar three-dimensional ordering in (In,Ga)As/GaAs(311)B quantum dot superlattices Applied Physics Letters. 94: 203105. DOI: 10.1063/1.3141404 |
0.508 |
|
| 2009 |
Wu J, Li Z, Shao D, Manasreh MO, Kunets VP, Wang ZM, Salamo GJ, Weaver BD. Multicolor photodetector based on GaAs quantum rings grown by droplet epitaxy Applied Physics Letters. 94: 171102. DOI: 10.1063/1.3126644 |
0.437 |
|
| 2009 |
Mazur YI, Dorogan VG, Marega E, Tarasov GG, Cesar DF, Lopez-Richard V, Marques GE, Salamo GJ. Mechanisms of interdot coupling in (In,Ga)As/GaAs quantum dot arrays Applied Physics Letters. 94. DOI: 10.1063/1.3103312 |
0.695 |
|
| 2009 |
Wang ZM, Rodriguez C, Seydmohamadi S, Mazur YI, Xie YZ, Salamo GJ. Lateral alignment of InGaAs quantum dots as function of spacer thickness Applied Physics Letters. 94: 83107. DOI: 10.1063/1.3089695 |
0.51 |
|
| 2009 |
Flagg EB, Muller A, Robertson JW, Founta S, Deppe DG, Xiao M, Ma W, Salamo GJ, Shih CK. Resonantly driven coherent oscillations in a solid-state quantum emitter Nature Physics. 5: 203-207. DOI: 10.1038/Nphys1184 |
0.453 |
|
| 2009 |
Li AZ, Wang ZM, Wu J, Xie Y, Sablon KA, Salamo GJ. Evolution of Holed Nanostructures on GaAs (001) Crystal Growth and Design. 9: 2941-2943. DOI: 10.1021/Cg900189T |
0.711 |
|
| 2009 |
Lee JH, Wang ZM, Abuwaar ZY, Salamo GJ. Design of nanostructure complexes by droplet epitaxy Crystal Growth and Design. 9: 715-721. DOI: 10.1021/Cg701142D |
0.328 |
|
| 2009 |
Ma Z, Holden T, Wang ZM, Salamo GJ, Yu PY, Mao SS. Lateral and vertical ordered one-dimensional InGaAs/GaAs quantum structures Applied Physics A. 96: 307-315. DOI: 10.1007/S00339-009-5204-4 |
0.505 |
|
| 2009 |
Vasa P, Pomraenke R, Schwieger S, Mazur YI, Kunets V, Srinivasan P, Johnson E, Runge E, Salamo G, Lienau C. Coherent exciton - Surface plasmon polariton interactions in hybrid metal semiconductor nanostructures Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 466-469. DOI: 10.1002/Pssc.200880329 |
0.424 |
|
| 2009 |
Lee JH, Wang ZM, Kim ES, Kim NY, Park SH, Salamo GJ. Self-assembled InGaAs tandem nanostructures consisting of a hole and pyramid on GaAs (311)A by droplet epitaxy Physica Status Solidi (a). 207: 348-353. DOI: 10.1002/Pssa.200925406 |
0.423 |
|
| 2009 |
Kladko V, Slobodian M, Lytvyn P, Strelchuk V, Mazur Y, Marega E, Hussein M, Salamo G. Three-dimensional ordering in self-organized (In,Ga) As quantum dot multilayer structures Physica Status Solidi (a). 206: 1748-1751. DOI: 10.1002/Pssa.200881593 |
0.507 |
|
| 2009 |
Flagg EB, Robertson JW, Founta S, Ma W, Xiao M, Salamo GJ, Shih CK. Experimental evidence of single-phonon mediated inter-level excitonic transitions in a semiconductor quantum dot 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009. |
0.393 |
|
| 2008 |
Wong PS, Liang BL, Dorogan VG, Albrecht AR, Tatebayashi J, He X, Nuntawong N, Mazur YI, Salamo GJ, Brueck SR, Huffaker DL. Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure. Nanotechnology. 19: 435710. PMID 21832714 DOI: 10.1088/0957-4484/19/43/435710 |
0.737 |
|
| 2008 |
Sablon KA, Wang ZhM, Salamo GJ. Composite droplets: evolution of InGa and AlGa alloys on GaAs(100). Nanotechnology. 19: 125609. PMID 21817741 DOI: 10.1088/0957-4484/19/12/125609 |
0.636 |
|
| 2008 |
Taylor C, Marega E, Stach EA, Salamo G, Hussey L, Muñoz M, Malshe A. Directed self-assembly of quantum structures by nanomechanical stamping using probe tips. Nanotechnology. 19: 015301. PMID 21730527 DOI: 10.1088/0957-4484/19/01/015301 |
0.516 |
|
| 2008 |
Sablon KA, Wang ZM, Salamo GJ, Zhou L, Smith DJ. Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces. Nanoscale Research Letters. 3: 530-533. PMID 20596345 DOI: 10.1007/S11671-008-9194-5 |
0.729 |
|
| 2008 |
Lytvyn PM, Mazur YI, Marega E, Dorogan VG, Kladko VP, Slobodian MV, Strelchuk VV, Hussein ML, Ware ME, Salamo GJ. Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition. Nanotechnology. 19: 505605. PMID 19942777 DOI: 10.1088/0957-4484/19/50/505605 |
0.728 |
|
| 2008 |
Liang BL, Wang ZM, Wang XY, Lee JH, Mazur YI, Shih CK, Salamo GJ. Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy. Acs Nano. 2: 2219-24. PMID 19206386 DOI: 10.1021/Nn800224P |
0.484 |
|
| 2008 |
Vasa P, Pomraenke R, Schwieger S, Mazur YI, Kunets V, Srinivasan P, Johnson E, Kihm JE, Kim DS, Runge E, Salamo G, Lienau C. Coherent exciton-surface-plasmon-polariton interaction in hybrid metal-semiconductor nanostructures. Physical Review Letters. 101: 116801. PMID 18851308 DOI: 10.1103/Physrevlett.101.116801 |
0.422 |
|
| 2008 |
Dobbert J, Kunets VP, Morgan TA, Guzun D, Mazur YI, Masselink WT, Salamo GJ. Strained quantum well InAs micro-Hall sensors: Dependence of device performance on channel thickness Ieee Transactions On Electron Devices. 55: 695-700. DOI: 10.1109/Ted.2007.913000 |
0.354 |
|
| 2008 |
Passmore BS, Wu J, Manasreh MO, Kunets VP, Lytvyn PM, Salamo GJ. Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in $\hbox{In}_{0.35}\hbox{Ga}_{0.65}\hbox{As}$ Multiple Quantum Dot Photodetector Ieee Electron Device Letters. 29: 224-227. DOI: 10.1109/Led.2007.915371 |
0.456 |
|
| 2008 |
Pomraenke R, Lienau C, Mazur YI, Wang ZM, Liang B, Tarasov GG, Salamo GJ. Near-field optical spectroscopy of GaAs Aly Ga1-y As quantum dot pairs grown by high-temperature droplet epitaxy Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.075314 |
0.51 |
|
| 2008 |
Liang BL, Mazur YI, Kunets VP, Wang ZM, Salamo GJ, DeCuir Jr EA, Passmore B, Manasreh MO. Enhanced photoluminescence from InAs/GaAs surface quantum dots by using a Si-doped interlayer Nanotechnology. 19: 065705. DOI: 10.1088/0957-4484/19/6/065705 |
0.502 |
|
| 2008 |
AbuWaar ZY, Marega E, Mortazavi M, Salamo GJ. In situ photoluminescence study of uncapped InAs/GaAs quantum dots Nanotechnology. 19. DOI: 10.1088/0957-4484/19/33/335712 |
0.477 |
|
| 2008 |
Kunets VP, Morgan TA, Mazur YI, Dorogan VG, Lytvyn PM, Ware ME, Guzun D, Shultz JL, Salamo GJ. Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy Journal of Applied Physics. 104. DOI: 10.1063/1.3020532 |
0.729 |
|
| 2008 |
Dorogan VG, Mazur YI, Lee JH, Wang ZM, Ware ME, Salamo GJ. Thermal peculiarity of AlAs-capped InAs quantum dots in a GaAs matrix Journal of Applied Physics. 104. DOI: 10.1063/1.3020521 |
0.73 |
|
| 2008 |
Mazur YI, Abu Waar ZY, Mishima TD, Lee JH, Tarasov GG, Liang BL, Dorogan VG, Ware ME, Wang ZM, Johnson MB, Salamo GJ. Spectroscopic observation of developing InAs quantum dots on GaAs ringlike-nanostructured templates Journal of Applied Physics. 104. DOI: 10.1063/1.2970149 |
0.732 |
|
| 2008 |
Wang BR, Sun BQ, Ji Y, Dou XM, Xu ZY, Wang ZM, Salamo GJ. Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains Applied Physics Letters. 93: 11107. DOI: 10.1063/1.2957466 |
0.469 |
|
| 2008 |
Sablon KA, Lee JH, Wang ZM, Shultz JH, Salamo GJ. Configuration control of quantum dot molecules by droplet epitaxy Applied Physics Letters. 92. DOI: 10.1063/1.2924308 |
0.758 |
|
| 2008 |
Teodoro MD, Dias IFL, Laureto E, Duarte JL, González-Borrero PP, Lourenço SA, Mazzaro I, Marega E, Salamo GJ. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs∕AlGaAs Journal of Applied Physics. 103: 093508. DOI: 10.1063/1.2913513 |
0.379 |
|
| 2008 |
Lee JH, Sablon K, Wang ZM, Salamo GJ. Evolution of InGaAs quantum dot molecules Journal of Applied Physics. 103. DOI: 10.1063/1.2890149 |
0.749 |
|
| 2008 |
Mazur YI, Noda S, Tarasov GG, Dorogan VG, Salamo GJ, Bierwagen O, Masselink WT, Decuir EA, Manasreh MO. Excitonic band edges and optical anisotropy of InAsInP quantum dot structures Journal of Applied Physics. 103. DOI: 10.1063/1.2872781 |
0.723 |
|
| 2008 |
Hanke M, Wang ZM, Mazur YI, Lee JH, Salamo GJ, Schmidbauer M. Step bunch assisted two dimensional ordering of In0.19 Ga0.81 AsGaAs quantum dots on vicinal GaAs(001) surfaces Applied Physics Letters. 92. DOI: 10.1063/1.2838453 |
0.432 |
|
| 2008 |
Cooke DG, Hegmann FA, Mazur YI, Wang ZM, Black W, Wen H, Salamo GJ, Mishima TD, Lian GD, Johnson MB. Ultrafast carrier capture dynamics in InGaAs∕GaAs quantum wires Journal of Applied Physics. 103: 023710. DOI: 10.1063/1.2831024 |
0.448 |
|
| 2008 |
Lee JH, Wang ZM, Ware ME, Wijesundara KC, Garrido M, Stinaff EA, Salamo GJ. Super low density InGaAs semiconductor ring-shaped nanostructures Crystal Growth and Design. 8: 1945-1951. DOI: 10.1021/Cg701263C |
0.373 |
|
| 2008 |
Lee JH, Wang ZM, Sablon K, Salamo GJ. Formation of hybrid molecules composed of Ga metal particle in direct contact with InGaAs semiconductor quantum ring Crystal Growth and Design. 8: 690-694. DOI: 10.1021/Cg0704706 |
0.71 |
|
| 2008 |
Tran TL, Hatami F, Masselink WT, Kunets VP, Salamo GJ. Comparison of MBE growth of InSb on Si (001) and GaAs (001) Journal of Electronic Materials. 37: 1799-1805. DOI: 10.1007/S11664-008-0558-5 |
0.338 |
|
| 2008 |
Strelchuk VV, Mazur YI, Wang ZM, Schmidbauer M, Kolomys OF, Valakh MY, Manasreh MO, Salamo GJ. Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains Journal of Materials Science: Materials in Electronics. 19: 692-698. DOI: 10.1007/S10854-007-9381-7 |
0.495 |
|
| 2008 |
Wang ZM, Mazur YI, Sablon KA, Mishima TD, Johnson MB, Salamo GJ. Unusual role of the substrate in droplet-induced gaas/algaas quantum-dot pairs Physica Status Solidi - Rapid Research Letters. 2: 281-283. DOI: 10.1002/Pssr.200802196 |
0.757 |
|
| 2008 |
Kunets VP, Ware ME, Lytvyn PM, Mazur YI, Tarasov GG, Salamo GJ. Characteristics of lateral transport in In0.35Ga 0.65As/GaAs quantum dot heterostructures with variation of size, shape and density of quantum dots Materials Research Society Symposium Proceedings. 1117: 7-12. |
0.395 |
|
| 2008 |
Dorogan VG, Mazur YI, Bierwagen O, Tarasov GG, Decuir EA, Noda S, Zhuchenko ZY, Manasreh MO, Masselink WT, Salamo GJ. Spectroscopic study of InAs/InP nanostructures Materials Research Society Symposium Proceedings. 1117: 54-59. |
0.685 |
|
| 2007 |
Muller A, Flagg EB, Bianucci P, Wang XY, Deppe DG, Ma W, Zhang J, Salamo GJ, Xiao M, Shih CK. Resonance fluorescence from a coherently driven semiconductor quantum dot in a cavity. Physical Review Letters. 99: 187402. PMID 17995437 DOI: 10.1103/Physrevlett.99.187402 |
0.401 |
|
| 2007 |
Wang ZM, Liang B, Sablon KA, Lee J, Mazur YI, Strom NW, Salamo GJ. Self-organization of InAs quantum-dot clusters directed by droplet homoepitaxy. Small (Weinheim An Der Bergstrasse, Germany). 3: 235-8. PMID 17206731 DOI: 10.1002/Smll.200600330 |
0.769 |
|
| 2007 |
Lozovski V, Vasilenko V, Tarasov G, Mazur Y, Salamo G. Near-field imaging of surfaces with Gaussian distribution of carriers Journal of the Optical Society of America B-Optical Physics. 24: 1542-1548. DOI: 10.1364/Josab.24.001542 |
0.301 |
|
| 2007 |
Strel’chuk VV, Lytvyn PM, Kolomys AF, Valakh MY, Mazur YI, Wang ZM, Salamo GJ. Lateral ordering of quantum dots and wires in the (In,Ga)As/GaAs(100) multilayer structures Semiconductors. 41: 73-80. DOI: 10.1134/S1063782607010150 |
0.524 |
|
| 2007 |
Lee J, Wang Z, Liang B, Black W, Kunets VP, Mazur Y, Salamo GJ. Formation of Self-Assembled Sidewall Nanowires on Shallow Patterned GaAs (100) Ieee Transactions On Nanotechnology. 6: 70-74. DOI: 10.1109/Tnano.2006.886774 |
0.409 |
|
| 2007 |
Lee JH, Wang ZM, Salamo GJ. Observation of change in critical thickness of in droplet formation on GaAs(100) Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/17/176223 |
0.422 |
|
| 2007 |
Mazur YI, Wang ZM, Kissel H, Zhuchenko ZY, Lisitsa MP, Tarasov GG, Salamo GJ. Spectroscopy of sub-wetting layer states in InAs/GaAs quantum dot bi-layer systems Semiconductor Science and Technology. 22: 86-96. DOI: 10.1088/0268-1242/22/2/015 |
0.456 |
|
| 2007 |
Lee JH, Wang ZM, Liang BL, Sablon KA, Strom NW, Salamo GJ. Multiple vertically stacked quantum dot clusters with improved size homogeneity Journal of Physics D: Applied Physics. 40: 198-202. DOI: 10.1088/0022-3727/40/1/015 |
0.75 |
|
| 2007 |
Passmore BS, Wu J, Manasreh MO, Salamo GJ. Dual broadband photodetector based on interband and intersubband transitions in InAs quantum dots embedded in graded InGaAs quantum wells Applied Physics Letters. 91. DOI: 10.1063/1.2822412 |
0.47 |
|
| 2007 |
Lytvyn PM, Strelchuk VV, Kolomys OF, Prokopenko IV, Valakh MY, Mazur YI, Wang ZM, Salamo GJ, Hanke M. Two-dimensional ordering of "In,Ga…As quantum dots in vertical multilayers grown on GaAs"100… and "n11… Applied Physics Letters. 91: 173118. DOI: 10.1063/1.2802567 |
0.507 |
|
| 2007 |
Hussein ML, Marega E, Salamo GJ. 3D self-organization of InGaAs quantum dots grown over GaAs 〈001〉 Aip Conference Proceedings. 929: 55-58. DOI: 10.1063/1.2776688 |
0.392 |
|
| 2007 |
Schmidbauer M, Wang ZM, Mazur YI, Lytvyn PM, Salamo GJ, Grigoriev D, Schäfer P, Köhler R, Hanke M. Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100) Applied Physics Letters. 91: 93110. DOI: 10.1063/1.2775801 |
0.499 |
|
| 2007 |
Hanke M, Mazur YI, Marega E, AbuWaar ZY, Salamo GJ, Schäfer P, Schmidbauer M. Shape transformation during overgrowth of InGaAs /GaAs(001) quantum rings Applied Physics Letters. 91: 43103. DOI: 10.1063/1.2760191 |
0.44 |
|
| 2007 |
Wang ZM, Liang BL, Sablon KA, Salamo GJ. Nanoholes fabricated by self-assembled gallium nanodrill on GaAs(100) Applied Physics Letters. 90. DOI: 10.1063/1.2713745 |
0.755 |
|
| 2007 |
Ma Z, Holden T, Wang ZM, Salamo GJ, Malikova L, Mao SS. Strain-induced electronic energy changes in multilayered InGaAs∕GaAs quantum wire structures Journal of Applied Physics. 101: 044305. DOI: 10.1063/1.2437574 |
0.461 |
|
| 2007 |
AbuWaar ZY, Mazur YI, Lee JH, Wang ZM, Salamo GJ. Optical behavior of GaAs/AlGaAs ringlike nanostructures Journal of Applied Physics. 101. DOI: 10.1063/1.2425194 |
0.375 |
|
| 2007 |
Mazur YI, Liang BL, Wang ZM, Tarasov GG, Guzun D, Salamo GJ. Development of continuum states in photoluminescence of self-assembled InGaAsGaAs quantum dots Journal of Applied Physics. 101. DOI: 10.1063/1.2402745 |
0.482 |
|
| 2007 |
Liang BL, Wang ZM, Sablon KA, Mazur YI, Salamo GJ. Influence of GaAs substrate orientation on InAs quantum dots: Surface morphology, critical thickness, and optical properties Nanoscale Research Letters. 2: 609-613. DOI: 10.1007/S11671-007-9103-3 |
0.766 |
|
| 2007 |
Strom NW, Wang ZM, Lee JH, AbuWaar ZY, Mazur YI, Salamo GJ. Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates Nanoscale Research Letters. 2: 112-117. DOI: 10.1007/S11671-007-9040-1 |
0.508 |
|
| 2007 |
Kladko V, Strelchuk V, Kolomys A, Slobodian M, Mazur Y, Wang Z, Kunets VP, Salamo G. Microstructural Aspects of Nucleation and Growth of (In,Ga)As-GaAs(001) Islands with Low Indium Content Journal of Electronic Materials. 36: 1555-1561. DOI: 10.1007/S11664-007-0258-6 |
0.413 |
|
| 2007 |
Kunets VP, Dobbert J, Mazur YI, Salamo GJ, Müller U, Masselink WT, Kostial H, Wiebicke E. Low thermal drift in highly sensitive doped channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As micro-Hall element Journal of Materials Science: Materials in Electronics. 19: 776-782. DOI: 10.1007/S10854-007-9408-0 |
0.335 |
|
| 2007 |
Kladko VP, Slobodian MV, Strelchuk VV, Yefanov OM, Machulin VF, Mazur YI, Wang ZM, Salamo GJ. Structural anisotropy of InGaAs/GaAs(001) quantum dot chains structures Physica Status Solidi (a). 204: 2567-2571. DOI: 10.1002/Pssa.200675678 |
0.467 |
|
| 2007 |
Lee JH, Wang ZM, Black WT, Kunets VP, Mazur YI, Salamo GJ. Spatially localized formation of InAs quantum dots on shallow patterns regardless of cristallographic directions Advanced Functional Materials. 17: 3187-3193. DOI: 10.1002/Adfm.200700066 |
0.482 |
|
| 2006 |
Abuwaar ZY, Wang ZM, Lee JH, Salamo GJ. Observation of Ga droplet formation on (311)A and (511)A GaAs surfaces. Nanotechnology. 17: 4037-40. PMID 21727534 DOI: 10.1088/0957-4484/17/16/007 |
0.378 |
|
| 2006 |
Wang X, Wang ZM, Liang B, Salamo GJ, Shih CK. Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains. Nano Letters. 6: 1847-51. PMID 16967989 DOI: 10.1021/Nl060271T |
0.46 |
|
| 2006 |
Schmidbauer M, Seydmohamadi Sh, Grigoriev D, Wang ZhM, Mazur YI, Schäfer P, Hanke M, Köhler R, Salamo GJ. Controlling planar and vertical ordering in three-dimensional (In,Ga)As quantum dot lattices by GaAs surface orientation. Physical Review Letters. 96: 066108. PMID 16606019 DOI: 10.1103/Physrevlett.96.066108 |
0.483 |
|
| 2006 |
Suntsov S, Makris KG, Christodoulides DN, Stegeman GI, Haché A, Morandotti R, Yang H, Salamo G, Sorel M. Observation of discrete surface solitons. Physical Review Letters. 96: 063901. PMID 16605995 DOI: 10.1103/Physrevlett.96.063901 |
0.322 |
|
| 2006 |
Marega E, Waar ZA, Hussein M, Salamo G. Controlling Lateral Ordering of InGaAs Quantum Dots with Arsenic Background Mrs Proceedings. 959. DOI: 10.1557/Proc-0959-M17-16 |
0.45 |
|
| 2006 |
Hussein ML, Marega E, Salamo G. Isotropic Lateral Ordering of III-V Quantum Dots Over GaAs (001) By Self-Assembly Mrs Proceedings. 959. DOI: 10.1557/Proc-0959-M17-09 |
0.449 |
|
| 2006 |
Taylor CR, Malshe A, Stach E, Marega E, Salamo G. Mechanically biased self-assembly of quantum dots by nanoindentation Materials Research Society Symposium Proceedings. 921: 146-151. DOI: 10.1557/Proc-0921-T07-07 |
0.499 |
|
| 2006 |
Tarasov GG, Zhuchenko ZY, Lisitsa MP, Mazur YI, Wang ZM, Salamo GJ, Warming T, Bimberg D, Kissel H. Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures Semiconductors. 40: 79-83. DOI: 10.1134/S1063782606010143 |
0.505 |
|
| 2006 |
Kim DJ, Cha D, Salamo GJ, Yang H. Enabling in situ atomic scale surface imaging for vertical molecular beam epitaxy machines Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2776-2778. DOI: 10.1116/1.2395963 |
0.325 |
|
| 2006 |
Yazdanpanah V, Wang ZM, Lee JH, Salamo GJ. Structural evolution in strained In0.18Ga0.82As stacking multilayers on vicinal GaAs surfaces New Journal of Physics. 8. DOI: 10.1088/1367-2630/8/10/233 |
0.347 |
|
| 2006 |
Lee JH, Wang ZM, Liang BL, Black WT, Kunets VP, Mazur YI, Salamo GJ. Selective growth of InGaAs/GaAs quantum dot chains on pre-patterned GaAs(100) Nanotechnology. 17: 2275-2278. DOI: 10.1088/0957-4484/17/9/034 |
0.489 |
|
| 2006 |
Lee JH, Wang ZM, Abuwaar ZY, Strom NW, Salamo GJ. Evolution between self-assembled single and double ring-like nanostructures Nanotechnology. 17: 3973-3976. DOI: 10.1088/0957-4484/17/15/061 |
0.354 |
|
| 2006 |
Liang BL, Wang ZM, Mazur YI, Strelchuck VV, Holmes K, Lee JH, Salamo GJ. InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties Nanotechnology. 17: 2736-2740. DOI: 10.1088/0957-4484/17/11/004 |
0.466 |
|
| 2006 |
Lee JH, Wang ZM, Liang BL, Sablon KA, Strom NW, Salamo GJ. Size and density control of InAs quantum dot ensembles on self-assembled nanostructured templates Semiconductor Science and Technology. 21: 1547-1551. DOI: 10.1088/0268-1242/21/12/008 |
0.756 |
|
| 2006 |
Liang BL, Wang ZM, Mazur YI, Salamo GJ. Photoluminescence of surface InAs quantum dot stacking on multilayer buried quantum dots Applied Physics Letters. 89. DOI: 10.1063/1.2408653 |
0.51 |
|
| 2006 |
Lee JH, Wang ZM, Salamo GJ. Survival of atomic monolayer steps during oxide desorption on GaAs (100) Journal of Applied Physics. 100. DOI: 10.1063/1.2401649 |
0.378 |
|
| 2006 |
Liang BL, Wang ZM, Lee JH, Sablon KA, Mazur YI, Salamo GJ. Annealing effect on GaAs droplet templates in formation of self-assembled InAs quantum dots Applied Physics Letters. 89. DOI: 10.1063/1.2396928 |
0.767 |
|
| 2006 |
Lee JH, Wang ZM, Strom NW, Mazur YI, Salamo GJ. InGaAs quantum dot molecules around self-assembled GaAs nanomound templates Applied Physics Letters. 89. DOI: 10.1063/1.2388049 |
0.482 |
|
| 2006 |
Mazur YI, Liang BL, Wang ZM, Guzun D, Salamo GJ, Zhuchenko ZY, Tarasov GG. Excitonic transfer in coupled InGaAs/GaAs quantum well to InAs quantum dots Applied Physics Letters. 89. DOI: 10.1063/1.2360914 |
0.5 |
|
| 2006 |
DeCuir EA, Fred E, Passmore BS, Muddasani A, Manasreh MO, Xie J, Morkoç H, Ware ME, Salamo GJ. Near-infrared wavelength intersubband transitions in GaN∕AlN short period superlattices Applied Physics Letters. 89: 151112. DOI: 10.1063/1.2358929 |
0.374 |
|
| 2006 |
Mazur YI, Liang BL, Wang ZM, Tarasov GG, Guzun D, Salamo GJ, Mishima TD, Johnson MB. Lengthening of the photoluminescence decay time of InAs quantum dots coupled to InGaAs∕GaAs quantum well Journal of Applied Physics. 100: 54313. DOI: 10.1063/1.2345467 |
0.497 |
|
| 2006 |
Mazur YI, Liang BL, Wang ZM, Guzun D, Salamo GJ, Tarasov GG, Zhuchenko ZY. Time-resolved photoluminescence spectroscopy of subwetting layer states in InGaAs/GaAs quantum dot structures Journal of Applied Physics. 100. DOI: 10.1063/1.2345464 |
0.488 |
|
| 2006 |
Liang BL, Wang ZM, Lee JH, Sablon K, Mazur YI, Salamo GJ. Low density InAs quantum dots grown on GaAs nanoholes Applied Physics Letters. 89: 43113. DOI: 10.1063/1.2244043 |
0.746 |
|
| 2006 |
Liang BL, Wang ZM, Mazur YI, Salamo GJ, DeCuir EA, Manasreh MO. Correlation between surface and buried InAs quantum dots Applied Physics Letters. 89: 43125. DOI: 10.1063/1.2243865 |
0.511 |
|
| 2006 |
Hanke M, Schmidbauer M, Grigoriev D, Schäfer P, Köhler R, Metzger TH, Wang ZM, Mazur YI, Salamo GJ. Zero-strain GaAs quantum dot molecules as investigated by x-ray diffuse scattering Applied Physics Letters. 89: 53116. DOI: 10.1063/1.2240114 |
0.483 |
|
| 2006 |
Lee JH, Wang ZM, Salamo GJ. Ga-triggered oxide desorption from GaAs(100) and non-(100) substrates Applied Physics Letters. 88. DOI: 10.1063/1.2214154 |
0.338 |
|
| 2006 |
Wang ZM, Lee JH, Liang BL, Black WT, Kunets VP, Mazur YI, Salamo GJ. Localized formation of InAs quantum dots on shallow-patterned GaAs(100) Applied Physics Letters. 88. DOI: 10.1063/1.2209157 |
0.511 |
|
| 2006 |
Chauvet M, Guo A, Fu G, Salamo G. Electrically switched photoinduced waveguide in unpoled strontium barium niobate Journal of Applied Physics. 99. DOI: 10.1063/1.2202119 |
0.502 |
|
| 2006 |
Wang ZM, Mazur YI, Shultz JL, Salamo GJ, Mishima TD, Johnson MB. One-dimensional postwetting layer in InGaAs/GaAs(100) quantum-dot chains Journal of Applied Physics. 99: 33705. DOI: 10.1063/1.2169868 |
0.454 |
|
| 2006 |
Mazur YI, Wang ZM, Salamo GJ, Strelchuk VV, Kladko VP, Machulin VF, Valakh MY, Manasreh MO. Investigation of indium distribution in InGaAs/GaAs quantum dot stacks using high-resolution x-ray diffraction and raman scattering Journal of Applied Physics. 99: 23517. DOI: 10.1063/1.2163009 |
0.467 |
|
| 2006 |
Wang ZM, Holmes K, Mazur YI, Ramsey KA, Salamo GJ. Self-organization of quantum-dot pairs by high-temperature droplet epitaxy Nanoscale Research Letters. 1: 57-61. DOI: 10.1007/S11671-006-9002-Z |
0.508 |
|
| 2006 |
Liang BL, Wang ZM, Mazur YI, Strelchuck VV, Salamo GJ. Growth and characterization of bilayer InAs/GaAs quantum dot structures Physica Status Solidi (a) Applications and Materials Science. 203: 2403-2410. DOI: 10.1002/Pssa.200622106 |
0.497 |
|
| 2006 |
Yefanov O, Kladko V, Gudymenko O, Strelchuk V, Mazur Y, Wang Z, Salamo G. Fields of deformation anisotropy exploration in multilayered (In,Ga)As/GaAs structures by high-resolution X-ray scattering Physica Status Solidi (a). 203: 154-157. DOI: 10.1002/Pssa.200563525 |
0.316 |
|
| 2006 |
Taylor C, Salamo G, Stach E, Malshe A. Nanoindentation assisted self-assembly of quantum dots Proceedings of the International Conference On Manufacturing Science and Engineering. 2006. |
0.412 |
|
| 2005 |
Wang XY, Ma WQ, Zhang JY, Salamo GJ, Xiao M, Shih CK. Photoluminescence intermittency of InGaAs/GaAs quantum dots confined in a planar microcavity. Nano Letters. 5: 1873-7. PMID 16218701 DOI: 10.1021/Nl051026X |
0.52 |
|
| 2005 |
Seydmohamadi S, Wen H, Wang ZM, Salamo GJ. Controlling (In,Ga)As quantum structures on high index GaAs surfaces Materials Research Society Symposium Proceedings. 849: 155-160. DOI: 10.1557/Proc-849-Kk1.8/Jj1.8/U1.8 |
0.547 |
|
| 2005 |
Mu X, Ding YJ, Wang Z, Salamo GJ, Little J. InAs quantum dots coupled with strained InGaAs/GaAs coupled quantum-wells Proceedings of Spie - the International Society For Optical Engineering. 5734: 19-26. DOI: 10.1117/12.584840 |
0.38 |
|
| 2005 |
Guo A, Tang Y, Black W, Salamo GJ, Segev M. Diffraction management in 2D waveguide arrays Proceedings of Spie - the International Society For Optical Engineering. 5646: 1-5. DOI: 10.1117/12.575567 |
0.409 |
|
| 2005 |
Wang ZM, Mazur YI, Holmes K, Salamo GJ. Control on self-organization of InGaAs/GaAs(100) quantum-dot chains Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1732-1735. DOI: 10.1116/1.1942509 |
0.501 |
|
| 2005 |
Liang J, Chua YC, Manasreh MO, Marega E, Salamo GJ. Broad-band photoresponse from InAs quantum dots embedded into InGaAs graded well Ieee Electron Device Letters. 26: 631-633. DOI: 10.1109/Led.2005.854392 |
0.507 |
|
| 2005 |
Mazur YI, Wang ZM, Tarasov GG, Salamo GJ, Tomm JW, Talalaev V, Kissel H. Nonresonant tunneling carrier transfer in bilayer asymmetric InAs GaAs quantum dots Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/PhysRevB.71.235313 |
0.407 |
|
| 2005 |
Wang ZM, Seydmohamadi S, Yazdanpanah VR, Salamo GJ. Surface dynamics during molecular-beam epitaxy of (In,Ga)As on GaAs (331) B: Formation of quantum wires with low in content Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.165315 |
0.828 |
|
| 2005 |
Taylor CR, Malshe AP, Salamo G, Prince RN, Riester L, Cho SO. Characterization of ultra-low-load (µN) nanoindents in GaAs(100) using a cube corner tip Smart Materials and Structures. 14: 963-970. DOI: 10.1088/0964-1726/14/5/034 |
0.343 |
|
| 2005 |
Grigoriev D, Schmidbauer M, Schäfer P, Besedin S, Mazur YI, Wang ZM, Salamo GJ, Köhler R. Three-dimensional self-ordering in an InGaAs/GaAs multilayered quantum dot structure investigated by x-ray diffuse scattering Journal of Physics D. 38. DOI: 10.1088/0022-3727/38/10A/029 |
0.415 |
|
| 2005 |
Wang ZM, Mazur YI, Seydmohamadi S, Salamo GJ, Kissel H. Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2131198 |
0.526 |
|
| 2005 |
Mazur YI, Wang ZM, Tarasov GG, Wen H, Strelchuk V, Guzun D, Xiao M, Salamo GJ, Mishima TD, Lian GD, Johnson MB. Strong optical nonlinearity in strain-induced laterally ordered In0.4Ga0.6As quantum wires on GaAs (311)A substrate Journal of Applied Physics. 98: 053711. DOI: 10.1063/1.2039999 |
0.468 |
|
| 2005 |
Mazur YI, Wang ZM, Tarasov GG, Kunets VP, Salamo GJ, Zhuchenko ZY, Kissel H. Tailoring of high-temperature photoluminescence in InAsGaAs bilayer quantum dot structures Journal of Applied Physics. 98. DOI: 10.1063/1.2039271 |
0.503 |
|
| 2005 |
Wang ZM, Zhang L, Holmes K, Salamo GJ. Selective etching of InGaAsGaAs(100) multilayers of quantum-dot chains Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1898425 |
0.478 |
|
| 2005 |
Cho SO, Wang ZM, Salamo GJ. Evolution of elongated (In,Ga)As-GaAs(100) islands with low indium content Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1883709 |
0.377 |
|
| 2005 |
Mazur YI, Wang ZM, Tarasov GG, Xiao M, Salamo GJ, Tomm JW, Talalaev V, Kissel H. Interdot carrier transfer in asymmetric bilayer InAs∕GaAs quantum dot structures Applied Physics Letters. 86: 063102. DOI: 10.1063/1.1861980 |
0.48 |
|
| 2005 |
Lytvyn P, Prokopenko I, Strelchuk V, Mazur Y, Wang Z, Salamo G. Microsize defects in InGaAs/GaAs A/B multilayers quantum dot stacks Journal of Crystal Growth. 284: 47-56. DOI: 10.1016/J.Jcrysgro.2005.07.005 |
0.471 |
|
| 2005 |
Yazdanpanah VR, Wang ZM, Salamo GJ. Morphological instability of GaAs (7 1 1)A: A transition between (1 0 0) and (5 1 1) terraces Journal of Crystal Growth. 280: 2-6. DOI: 10.1016/J.Jcrysgro.2005.02.059 |
0.817 |
|
| 2005 |
Yazdanpanah VR, Wang ZM, Seydmohamadi S, Salamo GJ. RHEED study of GaAs(3 3 1)B surface Journal of Crystal Growth. 277: 72-77. DOI: 10.1016/J.Jcrysgro.2005.01.063 |
0.791 |
|
| 2005 |
Seydmohamadi S, Wang ZM, Salamo GJ. Orientation dependence behavior of self-assembled (In,Ga)As quantum structures on GaAs surface Journal of Crystal Growth. 275: 410-414. DOI: 10.1016/J.Jcrysgro.2004.12.011 |
0.51 |
|
| 2005 |
Wang ZM, Holmes K, Shultz JL, Salamo GJ. Self-assembly of GaAs holed nanostructures by droplet epitaxy Physica Status Solidi (a) Applications and Materials Science. 202. DOI: 10.1002/Pssa.200510031 |
0.428 |
|
| 2005 |
Mu X, Ding YJ, Wang Z, Salamo GJ. Photoluminescence studies of self-assembled InAs quantum dots formed on InGaAs/GaAs quantum well Laser Physics Letters. 2: 538-543. DOI: 10.1002/Lapl.200510037 |
0.517 |
|
| 2005 |
Taylor CR, Stach EA, Malshe AP, Salamo G. Analysis of nanoscale deformation in GaAs(100): Towards patterned growth of quantum dots Materials Research Society Symposium Proceedings. 864: 175-180. |
0.351 |
|
| 2004 |
Mu X, Ding YJ, Wang Z, Salamo GJ. Evidence of strong phonon-assisted resonant intervalley up-transfer for electrons in type-II GaAs/AlAs superlattices Proceedings of Spie - the International Society For Optical Engineering. 5352: 276-283. DOI: 10.1109/Jqe.2004.841613 |
0.322 |
|
| 2004 |
Wen H, Wang ZM, Shultz JL, Liang BL, Salamo GJ. Growth and characterization of InAs epitaxial layer on GaAs(111)B Physical Review B - Condensed Matter and Materials Physics. 70. DOI: 10.1103/Physrevb.70.205307 |
0.354 |
|
| 2004 |
Ma WQ, Hussein ML, Shultz JL, Salamo GJ, Mishima TD, Johnson MB. Enhancing the in-plane spatial ordering of quantum dots Physical Review B. 69: 233312. DOI: 10.1103/Physrevb.69.233312 |
0.439 |
|
| 2004 |
Wang ZM, Seydmohamadi S, Lee JH, Salamo GJ. Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes Applied Physics Letters. 85: 5031-5033. DOI: 10.1063/1.1823590 |
0.497 |
|
| 2004 |
Wang ZM, Churchill H, George CE, Salamo GJ. High anisotropy of lateral alignment in multilayered (In,Ga)As/GaAs(100) quantum dot structures Journal of Applied Physics. 96: 6908-6911. DOI: 10.1063/1.1815382 |
0.521 |
|
| 2004 |
Cooke DG, Hegmann FA, Mazur YI, Ma WQ, Wang X, Wang ZM, Salamo GJ, Xiao M, Mishima TD, Johnson MB. Anisotropic photoconductivity of InGaAs quantum dot chains measured by terahertz pulse spectroscopy Applied Physics Letters. 85: 3839-3841. DOI: 10.1063/1.1807959 |
0.436 |
|
| 2004 |
Chua YC, Decuir EA, Passmore BS, Sharif KH, Manasreh MO, Wang ZM, Salamo GJ. Tuning In0.3Ga0.7As∕GaAs multiple quantum dots for long-wavelength infrared detectors Applied Physics Letters. 85: 1003-1005. DOI: 10.1063/1.1777822 |
0.504 |
|
| 2004 |
Wang ZM, Mazur YI, Salamo GJ, Lytvin PM, Strelchuk VV, Valakh MY. Persistence of (In,Ga)As quantum-dot chains under index deviation from GaAs(100) Applied Physics Letters. 84: 4681-4683. DOI: 10.1063/1.1760219 |
0.504 |
|
| 2004 |
Wang ZM, Holmes K, Mazur YI, Salamo GJ. Fabrication of (in,Ga)As quantum-dot chains on GaAs(100) Applied Physics Letters. 84: 1931-1933. DOI: 10.1063/1.1669064 |
0.504 |
|
| 2004 |
Wen H, Wang ZM, Salamo GJ. Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A Applied Physics Letters. 84: 1756-1758. DOI: 10.1063/1.1664018 |
0.474 |
|
| 2004 |
Wang XY, Wang ZM, Yazdanpanah VR, Salamo GJ, Xiao M. Polarization spectroscopy of InGaAs/GaAs quantum wires grown on (331) B GaAs templates with nanoscale fluctuations Journal of Applied Physics. 95: 1609-1611. DOI: 10.1063/1.1637721 |
0.823 |
|
| 2004 |
Seydmohamadi S, Wang ZM, Salamo GJ. Self assembled (In,Ga)As quantum structures on GaAs (4 1 1)A Journal of Crystal Growth. 269: 257-261. DOI: 10.1016/j.jcrysgro.2004.05.069 |
0.413 |
|
| 2003 |
Mazur YI, Kissel H, Yang H, Salamo GJ, Xiao M. Formation of low-density InAs/InP(001) quantum dot arrays Proceedings of Spie - the International Society For Optical Engineering. 5065: 219-225. DOI: 10.1117/12.502288 |
0.366 |
|
| 2003 |
Wang ZM, Salamo GJ. Surface dynamics during phase transitions of GaAs(100) Physical Review B - Condensed Matter and Materials Physics. 67: 1253241-1253244. DOI: 10.1103/Physrevb.67.125324 |
0.308 |
|
| 2003 |
Ma W, Wang X, Wang Z, Hussein ML, Shultz J, Xiao M, Salamo GJ. Piezoelectric effect in elongated (In,Ga)As islands on GaAs(100) Physical Review B - Condensed Matter and Materials Physics. 67: 353151-353155. DOI: 10.1103/Physrevb.67.035315 |
0.34 |
|
| 2003 |
Wang ZM, Shultz JL, Salamo GJ. Morphology evolution during strained (In,Ga)As epitaxial growth on GaAs vicinal (100) surfaces Applied Physics Letters. 83: 1749-1751. DOI: 10.1063/1.1606891 |
0.408 |
|
| 2003 |
Mazur YI, Wang ZM, Salamo GJ, Xiao M, Tarasov GG, Zhuchenko ZY, Masselink WT, Kissel H. Hidden resonant excitation of photoluminescence in bilayer arrays of InAs/GaAs quantum dots Applied Physics Letters. 83: 1866-1868. DOI: 10.1063/1.1606109 |
0.48 |
|
| 2003 |
Mazur YI, Ma WQ, Wang X, Wang ZM, Salamo GJ, Xiao M, Mishima TD, Johnson MB. InGaAs/GaAs three-dimensionally-ordered array of quantum dots Applied Physics Letters. 83: 987-989. DOI: 10.1063/1.1596712 |
0.499 |
|
| 2003 |
Pattada B, Chen J, Zhou Q, Manasreh MO, Hussein ML, Ma W, Salamo GJ. Optical absorption of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dots Applied Physics Letters. 82: 2509-2511. DOI: 10.1063/1.1567813 |
0.488 |
|
| 2003 |
Yazdanpanah VR, Wang ZM, Salamo GJ. Highly anisotropic morphologies of GaAs(331) surfaces Applied Physics Letters. 82: 1766-1768. DOI: 10.1063/1.1561571 |
0.8 |
|
| 2003 |
Wang ZM, Wen H, Yazdanpanah VR, Shultz JL, Salamo GJ. Strain-driven facet formation on self-assembled InAs islands on GaAs (311)A Applied Physics Letters. 82: 1688-1690. DOI: 10.1063/1.1559945 |
0.802 |
|
| 2003 |
Manasreh MO, Friedman DJ, Ma WQ, Workman CL, George CE, Salamo GJ. Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells Applied Physics Letters. 82: 514-516. DOI: 10.1063/1.1540731 |
0.811 |
|
| 2003 |
Wen H, Wang Z, Salamo GJ. Two-dimensional epitaxial growth of strained InGaAs on GaAs (001) Materials Research Society Symposium - Proceedings. 737: 401-406. |
0.31 |
|
| 2003 |
Hussein ML, Ma WQ, Salamo GJ. Normal Incidence Intersubband Transitions in InGaAs/gaas Quantum Dots With Non-monotonie Shift Materials Research Society Symposium - Proceedings. 776: 249-252. |
0.385 |
|
| 2003 |
Mu X, Ding YJ, Wang Z, Salamo GJ. Formation of InGaAs/GaAs quantum-well dots by using self-assembled InAs quantum dots as Stressors Osa Trends in Optics and Photonics Series. 88: 806-808. |
0.405 |
|
| 2002 |
Workman CL, Wang Z, Ma W, George CE, Panneer Selvam R, Salamo GJ, Zhou Q, Omar Manasreh M. Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M9.7 |
0.796 |
|
| 2002 |
Mu X, Ding YJ, Zotova IB, Yang H, Salamo GJ. Growth and characterization of single and stacked InP/InAs/InP quantum wires Proceedings of Spie - the International Society For Optical Engineering. 4656: 100-106. DOI: 10.1117/12.460807 |
0.406 |
|
| 2002 |
Wang ZM, Yazdanpanah VR, Workman CL, Ma WQ, Shultz JL, Salamo GJ. Origin of step formation on the GaAs(311) surface Physical Review B. 66. DOI: 10.1103/Physrevb.66.193313 |
0.785 |
|
| 2002 |
Wang ZM, Yazdanpanah VR, Shultz JL, Salamo GJ. GaAs(311) templates for molecular beam epitaxy growth: Surface morphologies and reconstruction Applied Physics Letters. 81: 2965-2967. DOI: 10.1063/1.1514822 |
0.821 |
|
| 2002 |
Mazur YI, Wang X, Wang ZM, Salamo GJ, Xiao M, Kissel H. Photoluminescence study of carrier transfer among vertically aligned double-stacked InAs/GaAs quantum dot layers Applied Physics Letters. 81: 2469-2471. DOI: 10.1063/1.1510157 |
0.486 |
|
| 2002 |
Mu X, Ding YJ, Yang H, Salamo GJ. Vertically stacking self-assembled quantum wires Applied Physics Letters. 81: 1107-1109. DOI: 10.1063/1.1497993 |
0.443 |
|
| 2002 |
Berhane Y, Manasreh MO, Yang H, Salamo GJ. Response to "comment on 'Thermal annealing effect on the intersublevel transitions in InAs quantum dots'" [Appl. Phys. Lett. 80, 4867 (2002)] Applied Physics Letters. 80: 4869-4870. DOI: 10.1063/1.1489488 |
0.453 |
|
| 2002 |
Yang H, Mu X, Zotova IB, Ding YJ, Salamo GJ. Self-assembled InAs quantum wires on InP(001) Journal of Applied Physics. 91: 3925-3927. DOI: 10.1063/1.1448862 |
0.519 |
|
| 2002 |
Mu X, Ding YJ, Yang H, Salamo GJ. Vertically stacking 10 periods of self-assembled InAs/InP quantum wires Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 225-226. |
0.347 |
|
| 2001 |
Guo A, Henry M, Salamo GJ, Segev M, Wood GL. Fixing multiple waveguides induced by photorefractive solitons: directional couplers and beam splitters. Optics Letters. 26: 1274-6. PMID 18049584 DOI: 10.1364/Ol.26.001274 |
0.5 |
|
| 2001 |
Mu X, Zotova IB, Ding YJ, Yang H, Salamo GJ. Observation of an anomalously large blueshift of the photoluminescence peak and evidence of band-gap renormalization in InP/InAs/InP quantum wires Applied Physics Letters. 79: 1091-1093. DOI: 10.1063/1.1390483 |
0.458 |
|
| 2001 |
Klotz M, Crosser M, Guo A, Henry M, Salamo GJ, Segev M, Wood GL. Fixing solitonic y junctions in photorefractive strontium-barium-niobate Applied Physics Letters. 79: 1423-1425. DOI: 10.1063/1.1389824 |
0.493 |
|
| 2001 |
Mu X, Ding YJ, Yang H, Salamo GJ. Cavity-enhanced and quasiphase-matched multi-order reflection-second-harmonic generation from GaAs/AlAs and GaAs/AlGaAs multilayers Applied Physics Letters. 79: 569-571. DOI: 10.1063/1.1383565 |
0.339 |
|
| 2001 |
Yang H, Ballet P, Salamo GJ. Formation of quantum wires and dots on InP(001) by As/P exchange Journal of Applied Physics. 89: 7871-7874. DOI: 10.1063/1.1372622 |
0.506 |
|
| 2001 |
Berhane Y, Manasreh MO, Yang H, Salamo GJ. Thermal annealing effect on the intersublevel transitions in InAs quantum dots Applied Physics Letters. 78: 2196-2198. DOI: 10.1063/1.1363693 |
0.497 |
|
| 2001 |
Ballet P, Smathers JB, Yang H, Workman CL, Salamo GJ. Control of size and density of InAs/(Al, Ga)As self-organized islands Journal of Applied Physics. 90: 481-487. DOI: 10.1063/1.1357784 |
0.782 |
|
| 2000 |
Yang H, Smathers JB, Ballet P, Workman CL, Salamo GJ. Formation and Evolution of InAs Nanowires on an InP(001) Surface Mrs Proceedings. 618: 141. DOI: 10.1557/Proc-618-141 |
0.78 |
|
| 2000 |
Ballet P, Smathers JB, Yang H, Workman CL, Salamo GJ. Scanning tunneling microscopy investigation of truncated InP/GaInP2 self-assembled islands Applied Physics Letters. 77: 3406-3408. DOI: 10.1063/1.1326836 |
0.783 |
|
| 2000 |
Hegeler F, Manasreh MO, Morath C, Ballet P, Yang H, Salamo G, Tan HH, Jagadish C. Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells Applied Physics Letters. 77: 2867-2869. DOI: 10.1063/1.1320846 |
0.369 |
|
| 2000 |
Ballet P, Smathers JB, Yang H, Workman CL, Salamo GJ. Scanning tunneling microscopy investigation of truncated InP/GaInP2 self-assembled islands Applied Physics Letters. 77: 3406-3408. |
0.751 |
|
| 2000 |
Yang H, Smathers JB, Ballet P, Workman CL, Salamo GJ. Formation and evolution of InAs nanowires on an InP(001) surface Materials Research Society Symposium - Proceedings. 618: 141-145. |
0.769 |
|
| 1999 |
Luo WA, Yao HJ, Afonso S, Qin SJ, Yoo SH, Ang S, Brown WD, Salamo GJ, Chan FT. Effect of planarization of the bottom superconducting yttrium-barium-copper-oxide layer in the multilayer structure Ieee Transactions On Applied Superconductivity. 9: 2418-2421. DOI: 10.1109/77.784960 |
0.329 |
|
| 1999 |
Manasreh MO, Ballet P, Smathers JB, Salamo GJ, Jagadish C. Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers Applied Physics Letters. 75: 525-527. DOI: 10.1063/1.124436 |
0.42 |
|
| 1999 |
Ballet P, Smathers JB, Salamo GJ. Morphology of InAs self-organized islands on AlAs surfaces Applied Physics Letters. 75: 337-339. DOI: 10.1063/1.124368 |
0.431 |
|
| 1999 |
Smathers JB, Ballet P, Salamo GJ. Morphological changes to InAs quantum dots caused by GaAs overgrowth Materials Research Society Symposium - Proceedings. 571: 331-336. |
0.422 |
|
| 1998 |
Smathers JB, Bullock DW, Ding Z, Salamo GJ, Thibado PM, Gerace B, Wirth W. Enabling in situ atomic-scale characterization of epitaxial surfaces and interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3112-3114. DOI: 10.1116/1.590496 |
0.301 |
|
| 1997 |
Chauvet M, Hawkins SA, Salamo GJ, Segev M, Bliss DF, Bryant G. Self-trapping of two-dimensional optical beams and light-induced waveguiding in photorefractive InP at telecommunication wavelengths Applied Physics Letters. 70: 2499-2501. DOI: 10.1063/1.118902 |
0.315 |
|
| 1996 |
Chauvet ME, Hawkins SA, Salamo GJ, Segev M, Bliss DF, Bryant G. Self-Trapping of Optical Beams and Light-Induced Waveguiding in Photorefractive InP at Telecommunication Wavelengths Mrs Proceedings. 450. DOI: 10.1557/Proc-450-345 |
0.307 |
|
| 1987 |
Wood GL, Clark WW, Miller MJ, Sharp EJ, Salamo GJ, Neurgaonkar RR. Broadband Photorefractive Properties and Self-Pumped Phase Conjugation in Ce-SBN:60 Ieee Journal of Quantum Electronics. 23: 2126-2135. DOI: 10.1109/Jqe.1987.1073279 |
0.301 |
|
| 1986 |
Tung JH, Tang AZ, Salamo GJ, Chan FT. Two-photon absorption of atomic hydrogen from two light beams Journal of the Optical Society of America B: Optical Physics. 3: 837-848. DOI: 10.1364/Josab.3.000837 |
0.322 |
|
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