Steven A. Ringel - Publications

Affiliations: 
Ohio State University, Columbus, Columbus, OH 
Area:
Electronics and Electrical Engineering, Computer Science

217 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Gleason DA, Galiano K, Brown JL, Hilton AM, Ringel SA, Arehart AR, Heller ER, Dorsey DL, Pelz JP. Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing Applied Physics Letters. 114: 053510. DOI: 10.1063/1.5079745  0.64
2016 Zhang Z, Cardwell D, Sasikumar A, Kyle ECH, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Arehart AR, Ringel SA. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures Journal of Applied Physics. 119. DOI: 10.1063/1.4948298  0.84
2016 Zhang Z, Farzana E, Arehart AR, Ringel SA. Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy Applied Physics Letters. 108. DOI: 10.1063/1.4941429  0.84
2016 Liu X, Jackson CM, Wu F, Mazumder B, Yeluri R, Kim J, Keller S, Arehart AR, Ringel SA, Speck JS, Mishra UK. Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition Journal of Applied Physics. 119. DOI: 10.1063/1.4939157  0.84
2016 Arehart AR, Sasikumar A, Via GD, Poling B, Heller ER, Ringel SA. Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN Microelectronics Reliability. 56: 45-48. DOI: 10.1016/j.microrel.2015.11.007  0.84
2016 Sasikumar A, Arehart AR, Cardwell DW, Jackson CM, Sun W, Zhang Z, Ringel SA. Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs Microelectronics Reliability. 56: 37-44. DOI: 10.1016/j.microrel.2015.10.026  0.84
2015 Deitz JI, Carnevale SD, Ringel SA, McComb DW, Grassman TJ. Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization. Journal of Visualized Experiments : Jove. e52745. PMID 26274560 DOI: 10.3791/52745  0.84
2015 Chen J, Puzyrev YS, Jiang R, Zhang EX, McCurdy MW, Fleetwood DM, Schrimpf RD, Pantelides ST, Arehart AR, Ringel SA, Saunier P, Lee C. Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs Ieee Transactions On Nuclear Science. 62: 2423-2430. DOI: 10.1109/TNS.2015.2488650  0.84
2015 Cardwell DW, Vaughn N, Paul P, Ratcliff C, Chmielewski D, Carnevale S, Arehart A, Grassman TJ, Ringel SA. Investigations of metamorphic (Al)GaInP for III-V multijunction photovoltaics 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356437  0.84
2015 Grassman TJ, Chmielewski DJ, Carnevale SD, Carlin JA, Ringel SA. GaAsP/Si dual-junction solar cells grown by MBE and MOCVD 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356384  0.84
2015 Chmielewski DJ, Carnevale S, Grassman TJ, Carlin JA, Ringel SA. High-performance metamorphic tunnel junctions for III-V/Si multijunction solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356382  0.84
2015 Garcia-Tabares E, Grassman TJ, Martin D, Carlin J, Rey-Stolle I, Ringel SA. Evolution of the silicon bottom cell photovoltaic behavior during III-V on Si multi-junction solar cells production 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356380  0.32
2015 Almansouri I, Bremner S, Ho-Baillie A, Ringel SA, Green MA. The design of single-junction GaAs and dual-junction GaAs/Si in the presence of threading dislocation density 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356245  0.84
2015 Deitz JI, Carnevale SD, Ringel SA, McComb DW, Grassman TJ. Extending characterization applications of electron channeling contrast imaging 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356198  0.84
2015 Paul PK, Cardwell DW, Jackson CM, Galiano K, Aryal K, Pelz JP, Marsillac S, Ringel SA, Grassman TJ, Arehart AR. Direct nm-scale spatial mapping of traps in CIGS 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355656  0.84
2015 Carlin AM, Fitzgerald EA, Ringel SA. III-V/SiGe on Si radiation hard space cells with Voc>2.6V 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355600  0.84
2015 Grassman TJ, Chmielewski DJ, Carnevale SD, Carlin JA, Ringel SA. GaAs 0.75P 0.25/Si Dual-Junction Solar Cells Grown by MBE and MOCVD Ieee Journal of Photovoltaics. DOI: 10.1109/JPHOTOV.2015.2493365  0.84
2015 Paul PK, Cardwell DW, Jackson CM, Galiano K, Aryal K, Pelz JP, Marsillac S, Ringel SA, Grassman TJ, Arehart AR. Direct nm-Scale Spatial Mapping of Traps in CIGS Ieee Journal of Photovoltaics. 5: 1482-1486. DOI: 10.1109/JPHOTOV.2015.2459971  0.84
2015 Almansouri I, Bremner S, Ho-Baillie A, Mehrvarz H, Hao X, Conibeer G, Grassman TJ, Carlin JA, Haas A, Ringel SA, Green MA. Designing bottom silicon solar cells for multijunction devices Ieee Journal of Photovoltaics. 5: 683-690. DOI: 10.1109/JPHOTOV.2014.2381875  0.84
2015 Carnevale SD, Deitz JI, Carlin JA, Picard YN, McComb DW, De Graef M, Ringel SA, Grassman TJ. Applications of electron channeling contrast imaging for the rapid characterization of extended defects in III-V/Si heterostructures Ieee Journal of Photovoltaics. 5: 676-682. DOI: 10.1109/JPHOTOV.2014.2379111  0.84
2015 Zhang Z, Arehart AR, Kyle ECH, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Ringel SA. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 106. DOI: 10.1063/1.4905783  0.84
2015 Gür E, Akyol F, Krishnamoorthy S, Rajan S, Ringel SA. Deep level defects in N-rich and In-rich InxGa1-XN: In composition dependence Superlattices and Microstructures. DOI: 10.1016/j.spmi.2016.05.009  0.84
2015 Sasikumar A, Arehart AR, Via GD, Winningham B, Poling B, Heller E, Ringel SA. Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps Microelectronics Reliability. 55: 2258-2262. DOI: 10.1016/j.microrel.2015.07.048  0.84
2015 García-Tabarés E, Carlin JA, Grassman TJ, Martín D, Rey-Stolle I, Ringel SA. Evolution of silicon bulk lifetime during III-V-on-Si multijunction solar cell epitaxial growth Progress in Photovoltaics: Research and Applications. DOI: 10.1002/pip.2703  0.84
2014 Sasikumar A, Arehart AR, Kaun SW, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Ringel SA. Defects in GaN based transistors Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2042020  0.84
2014 Ratcliff C, Grassman TJ, Carlin JA, Chmielewski DJ, Ringel SA. Ga-rich GaxIn1-xP solar cells on Si with 1.95 eV bandgap for ideal III-V/Si photovoltaics Proceedings of Spie - the International Society For Optical Engineering. 8981. DOI: 10.1117/12.2042017  0.84
2014 Carnevale SD, Deitz JI, Carlin JA, Picard YN, De Graef M, Ringel SA, Grassman TJ. Rapid characterization of extended defects in III-V/Si by electron channeling contrast imaging 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 2800-2803. DOI: 10.1109/PVSC.2014.6925512  0.84
2014 Chmielewski DJ, Grassman TJ, Carlin AM, Carlin JA, Speelman AJ, Ringel SA. Metamorphic GaAsP tunnel junctions for high-efficiency III-V/IV multijunction solar cell technology Ieee Journal of Photovoltaics. 4: 1301-1305. DOI: 10.1109/JPHOTOV.2014.2328592  0.84
2014 Grassman TJ, Carlin JA, Galiana B, Yang F, Mills MJ, Ringel SA. MOCVD-Grown GaP/Si subcells for integrated III-V/Si multijunction photovoltaics Ieee Journal of Photovoltaics. 4: 972-980. DOI: 10.1109/JPHOTOV.2014.2308727  0.84
2014 Sasikumar A, Cardwell DW, Arehart AR, Lu J, Kaun SW, Keller S, Mishra UK, Speck JS, Pelz JP, Ringel SA. Toward a physical understanding of the reliability-limiting E C-0.57 eV trap in GaN HEMTs Ieee International Reliability Physics Symposium Proceedings. 2C.1.1-2C.1.6. DOI: 10.1109/IRPS.2014.6860588  0.84
2014 Carnevale SD, Deitz JI, Carlin JA, Picard YN, De Graef M, Ringel SA, Grassman TJ. Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging Applied Physics Letters. 104. DOI: 10.1063/1.4883371  0.84
2014 Deitz J, Carnevale S, De Graef M, Picard YN, Ringel SA, Grassman T, McComb DW. Using electron channeling contrast imaging for misfit dislocation characterization in heteroepitaxial III-V/Si thin films Microscopy and Microanalysis. 20: 552-553. DOI: 10.1017/S1431927614004486  0.32
2014 Zhang Z, Jackson CM, Arehart AR, McSkimming B, Speck JS, Ringel SA. Direct determination of energy band alignments of Ni/Al2O 3/GaN MOS structures using internal photoemission spectroscopy Journal of Electronic Materials. 43: 828-832. DOI: 10.1007/s11664-013-2942-z  0.84
2013 Ringel SA, Carlin JA, Grassman TJ, Galiana B, Carlin AM, Ratcliff C, Chmielewski D, Yang L, Mills MJ, Mansouri A, Bremner SP, Ho-Baillie A, Hao X, Mehrvarz H, Conibeer G, et al. Ideal GaP/Si heterostructures grown by MOCVD: III-V/active-Si subcells, multijuntions, and MBE-to-MOCVD III-V/Si interface science Conference Record of the Ieee Photovoltaic Specialists Conference. 3383-3388. DOI: 10.1109/PVSC.2013.6745175  0.84
2013 Mansouri IA, Bremner S, Ho-Baillie A, Mehrvarz H, Hao X, Conibeer G, Green MA, Grassman TJ, Carlin JA, Ringel SA. Design of bottom silicon solar cell for multijunction devices Conference Record of the Ieee Photovoltaic Specialists Conference. 3310-3314. DOI: 10.1109/PVSC.2013.6745159  0.84
2013 Chmielewski DJ, Grassman TJ, Carlin AM, Carlin J, Speelman A, Ringel SA. Metamorphic tunnel junctions for high efficiency III-V/IV multi-junction solar cell technology Conference Record of the Ieee Photovoltaic Specialists Conference. 882-885. DOI: 10.1109/PVSC.2013.6744285  0.84
2013 Haas A, Sharps P, Aiken D, Grassman T, Carlin JA, Ringel S. Analysis of short- and long-term performance goals for III/V on active Si concentrator solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 867-872. DOI: 10.1109/PVSC.2013.6744282  0.84
2013 Grassman TJ, Shah DB, Carlin JA, Ringel SA. Exploration of epitaxial quantum dots within wide band gap metamorphic host materials for intermediate band solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 284-287. DOI: 10.1109/PVSC.2013.6744148  0.84
2013 Grassman TJ, Carlin JA, Ratcliff C, Chmielewski DJ, Ringel SA. Epitaxially-grown metamorphic GaAsP/Si dual-junction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 149-153. DOI: 10.1109/PVSC.2013.6744117  0.84
2013 Long RD, Jackson CM, Yang J, Hazeghi A, Hitzman C, Majety S, Arehart AR, Nishi Y, Ma TP, Ringel SA, McIntyre PC. Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen Applied Physics Letters. 103. DOI: 10.1063/1.4827102  0.84
2013 Zhang Z, Arehart AR, Cinkilic E, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, McSkimming B, Speck JS, Ringel SA. Impact of proton irradiation on deep level states in n-GaN Applied Physics Letters. 103. DOI: 10.1063/1.4816423  0.84
2013 Sasikumar A, Arehart AR, Martin-Horcajo S, Romero MF, Pei Y, Brown D, Recht F, Di Forte-Poisson MA, Calle F, Tadjer MJ, Keller S, Denbaars SP, Mishra UK, Ringel SA. Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters. 103. DOI: 10.1063/1.4813862  0.84
2013 Jackson CM, Arehart AR, Cinkilic E, McSkimming B, Speck JS, Ringel SA. Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies Journal of Applied Physics. 113. DOI: 10.1063/1.4808093  0.84
2013 Cardwell DW, Sasikumar A, Arehart AR, Kaun SW, Lu J, Keller S, Speck JS, Mishra UK, Ringel SA, Pelz JP. Spatially-resolved spectroscopic measurements of Ec - 0.57 eV traps in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4806980  0.84
2013 Grassman TJ, Carlin JA, Galiana B, Yang LM, Yang F, Mills MJ, Ringel SA. Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4801498  0.84
2013 Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA. Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics. 80: 19-22. DOI: 10.1016/j.sse.2012.09.010  0.84
2012 Grassman TJ, Ratcliff C, Carlin AM, Carlin JA, Yang LM, Mills MJ, Ringel SA. III-V/GaP epitaxy on Si for advanced photovoltaics and green light emitters Ecs Transactions. 50: 321-322. DOI: 10.1149/05009.0321ecst  0.84
2012 Grassman TJ, Carlin AM, Grandal J, Ratcliff C, Yang L, Mills MJ, Ringel SA. Spectrum-optimized Si-based III-V multijunction photovoltaics Proceedings of Spie - the International Society For Optical Engineering. 8256. DOI: 10.1117/12.909658  0.84
2012 Swaminathan K, Grassman TJ, Yang LM, Chmielewski D, Mills M, Ringel SA. Impact of threading dislocation density on metamorphic In xGa 1-xAs and In zGa 1-zP p-i-n photodetectors on GaAs Proceedings of Spie - the International Society For Optical Engineering. 8257. DOI: 10.1117/12.908581  0.84
2012 Grandal J, Grassman TJ, Carlin AM, Brenner MR, Galiana B, Carlin JA, Yang L, Mills MJ, Ringel SA. Growth and characterization of InGaAs quantum dots on metamorphic GaAsP templates by molecular beam epitaxy Conference Record of the Ieee Photovoltaic Specialists Conference. 1783-1787. DOI: 10.1109/PVSC.2012.6317939  0.84
2012 Carlin AM, Grassman TJ, Brenner MR, Grandal J, Ratcliff C, Yang L, Mills M, Sharma P, Fitzgerald EA, Ringel SA. Lattice-matched GaP/SiGe virtual substrates for low-dislocation density GaInP/GaAsP/Si solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 918-921. DOI: 10.1109/PVSC.2012.6317752  0.84
2012 Sasikumar A, Arehart A, Kolluri S, Wong MH, Keller S, Denbaars SP, Speck JS, Mishra UK, Ringel SA. Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs Ieee Electron Device Letters. 33: 658-660. DOI: 10.1109/LED.2012.2188710  0.84
2012 Sasikumar A, Arehart A, Ringel SA, Kaun S, Wong MH, Mishra UK, Speck JS. Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs Ieee International Reliability Physics Symposium Proceedings. 2C.3.1-2C.3.6. DOI: 10.1109/IRPS.2012.6241780  0.84
2012 Gür E, Tabares G, Arehart A, Chauveau JM, Hierro A, Ringel SA. Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy Journal of Applied Physics. 112. DOI: 10.1063/1.4769874  0.84
2012 Zhang Z, Hurni CA, Arehart AR, Speck JS, Ringel SA. Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4759037  0.84
2012 Cardwell DW, Arehart AR, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA, Pelz JP. Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 100. DOI: 10.1063/1.4714536  0.84
2012 Zhang Z, Hurni CA, Arehart AR, Yang J, Myers RC, Speck JS, Ringel SA. Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 100. DOI: 10.1063/1.3682528  0.84
2011 Swaminathan K, Yang LM, Grassman TJ, Tabares G, Guzman A, Hierro A, Mills MJ, Ringel SA. Metamorphic In(0.20)Ga(0.80)As p-i-n photodetectors grown on GaAs substrates for near infrared applications. Optics Express. 19: 7280-8. PMID 21503039  0.84
2011 Swaminathan K, Yang LM, Grassman TJ, Tabares G, Guzman A, Hierro A, Mills MJ, Ringel SA. Metamorphic In020Ga0. 80As p-i-n photodetectors grown on GaAs substrates for near infrared applications Optics Express. 19: 7280-7288. DOI: 10.1364/OE.19.007280  0.84
2011 Nath DN, Gür E, Ringel SA, Rajan S. Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar Inx Ga1-x N Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3562277  0.84
2011 Grassman TJ, Carlin AM, Swaminathan K, Ratcliff C, Grandal J, Yang L, Mills MJ, Ringel SA. Expanding the palette: Metamorphic strategies over multiple lattice constant ranges for extending the spectrum of accessible photovoltaic materials Conference Record of the Ieee Photovoltaic Specialists Conference. 003375-003380. DOI: 10.1109/PVSC.2011.6186671  0.84
2011 Pitera AJ, Hennessy J, Malonis AC, Fitzgerald EA, Ringel SA. Monolithically integrated thin film III-V/Si solar panel on wafer for active power management Conference Record of the Ieee Photovoltaic Specialists Conference. 003703-003706. DOI: 10.1109/PVSC.2011.6185955  0.84
2011 Ratcliff C, Grassman TJ, Carlin JA, Ringel SA. High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition Applied Physics Letters. 99. DOI: 10.1063/1.3644956  0.84
2011 Swaminathan K, Grassman TJ, Yang LM, Gu Q, Mills MJ, Ringel SA. Optically-aligned visible/near-infrared dual-band photodetector materials and devices on GaAs using metamorphic epitaxy Journal of Applied Physics. 110. DOI: 10.1063/1.3642981  0.84
2011 Gür E, Zhang Z, Krishnamoorty S, Rajan S, Ringel SA. Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies Applied Physics Letters. 99. DOI: 10.1063/1.3631678  0.84
2011 Arehart AR, Allerman AA, Ringel SA. Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes Journal of Applied Physics. 109. DOI: 10.1063/1.3592284  0.84
2011 González M, Carlin AM, Dohrman CL, Fitzgerald EA, Ringel SA. Determination of bandgap states in p-type In 0.49Ga 0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy Journal of Applied Physics. 109. DOI: 10.1063/1.3559739  0.84
2011 Tan KH, Wicaksono S, Loke WK, Li D, Yoon SF, Fitzgerald EA, Ringel SA, Harris JS. Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell Journal of Crystal Growth. 335: 66-69. DOI: 10.1016/j.jcrysgro.2011.09.023  0.84
2011 Arehart AR, Malonis AC, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA. Next generation defect characterization in nitride HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2242-2244. DOI: 10.1002/pssc.201000955  0.84
2010 Warner JH, Cress CD, Messenger SR, Walters RJ, Ringel SA, Park J. A Deep Level Transient Spectroscopy study of electron and proton irradiated p+ GaAs diodes Ieee Transactions On Nuclear Science. 57: 1940-1945. DOI: 10.1109/TNS.2010.2046335  0.84
2010 Yang CK, Roblin P, Groote FD, Ringel SA, Rajan S, Teyssier JP, Poblenz C, Pei Y, Speck J, Mishra UK. Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer Ieee Transactions On Microwave Theory and Techniques. 58: 1077-1088. DOI: 10.1109/TMTT.2010.2045452  0.84
2010 Grassman TJ, Brenner MR, Gonzalez M, Carlin AM, Unocic RR, Dehoff RR, Mills MJ, Ringel SA. Characterization of metamorphic GaAsP/Si materials and devices for photovoltaic applications Ieee Transactions On Electron Devices. 57: 3361-3369. DOI: 10.1109/TED.2010.2082310  0.84
2010 Warner JH, Maximenko SI, Messenger SR, Walters RJ, Ringel SA, Brenner MR, Carlin AM. Electrical characterization of electron and proton-induced defects in p+n GaAs photodiodes: EBIC study Conference Record of the Ieee Photovoltaic Specialists Conference. 2646-2650. DOI: 10.1109/PVSC.2010.5617203  0.84
2010 Grassman TJ, Carlin AM, Ringel SA. Metamorphic gaasp and ingap photovoltaic materials on Si for high-efficiency III-V/Si multijunction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2029-2033. DOI: 10.1109/PVSC.2010.5616938  0.84
2010 Arehart AR, Brenner MR, Zhang Z, Swaminathan K, Ringel SA. Traps in AlGaInP materials and devices lattice matched to GaAs for multi-junction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1999-2001. DOI: 10.1109/PVSC.2010.5616430  0.84
2010 Arehart AR, Sasikumar A, Via GD, Winningham B, Poling B, Heller E, Ringel SA. Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2010.5703396  0.84
2010 Nath DN, Gür E, Ringel SA, Rajan S. Molecular beam epitaxy of N-polar InGaN Applied Physics Letters. 97. DOI: 10.1063/1.3478226  0.84
2010 Arehart AR, Homan T, Wong MH, Poblenz C, Speck JS, Ringel SA. Impact of N- and Ga-face polarity on the incorporation of deep levels in n -type GaN grown by molecular beam epitaxy Applied Physics Letters. 96. DOI: 10.1063/1.3453660  0.84
2010 Arehart AR, Poblenz C, Speck JS, Ringel SA. Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy Journal of Applied Physics. 107. DOI: 10.1063/1.3309778  0.84
2009 Warner JH, Messenger SR, Walters RJ, Ringel SA, Brenner MR. A deep level transient spectroscopy study of electron and proton irradiated p+n GaAs diodes Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 282-285. DOI: 10.1109/RADECS.2009.5994593  0.84
2009 Grassman TJ, Brenner MR, Carlin AM, Rajagopalan S, Unocic R, Dehoff R, Mills M, Fraser H, Ringel SA. Toward metamorphic multijunction GaAsP/Si photovoltaics grown on optimized GaP/Si virtual substrates using anion-graded GaAsyP1-y buffers Conference Record of the Ieee Photovoltaic Specialists Conference. 002016-002021. DOI: 10.1109/PVSC.2009.5411489  0.84
2009 Chen XJ, Barnaby HJ, Warner JH, Messenger SR, Walters RJ, Ringel SA, Park J. Non-linear behaviors of dark current slope in p+n GaAs solar cells following proton irradiations Conference Record of the Ieee Photovoltaic Specialists Conference. 001565-001570. DOI: 10.1109/PVSC.2009.5411369  0.84
2009 Yang CK, Roblin P, Malonis A, Arehart A, Ringel S, Poblenz C, Pei Y, Speck J, Mishra U. Characterization of traps in AlGaN/GaN HEMTs with a combined large signal network analyzer/deep level optical spectrometer system Ieee Mtt-S International Microwave Symposium Digest. 1209-1212. DOI: 10.1109/MWSYM.2009.5165920  0.84
2009 Suh I, Roblin P, Ko Y, Yang CK, Malonis A, Arehart A, Ringel S, Poblenz C, Pei Y, Speck J, Mishra U. Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source 74th Arftg Microwave Measurement Conference - System Modeling and Measurement For High Accuracy Verification. DOI: 10.1109/ARFTG74.2009.5439111  0.84
2009 Grassman TJ, Brenner MR, Rajagopalan S, Unocic R, Dehoff R, Mills M, Fraser H, Ringel SA. Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy Applied Physics Letters. 94. DOI: 10.1063/1.3154548  0.84
2009 Hudait MK, Lin Y, Ringel SA. Strain relaxation properties of InAs yP 1-y metamorphic materials grown on InP substrates Journal of Applied Physics. 105. DOI: 10.1063/1.3098232  0.84
2009 Hudait MK, Brenner M, Ringel SA. Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1-y buffers by molecular beam epitaxy Solid-State Electronics. 53: 102-106. DOI: 10.1016/j.sse.2008.10.007  0.84
2008 Smith PE, Lueck M, Ringel SA, Brillson LJ. Atomic diffusion and interface electronic structure at In 0.49Ga0.51P/GaAs heterojunctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 89-95. DOI: 10.1116/1.2823031  0.84
2008 Wilt DM, Pal AT, Ringel SA, Fitzgerald EA, Jenkins PP, Walters R. Final results from the MISSE5 GaAs on Si solar cell experiment Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922860  0.84
2008 Arehart AR, Corrion A, Poblenz C, Speck JS, Mishra UK, Ringel SA. Deep level optical and thermal spectroscopy of traps in n -GaN grown by ammonia molecular beam epitaxy Applied Physics Letters. 93. DOI: 10.1063/1.2981571  0.84
2008 Lin Y, Arehart AR, Carlin AM, Ringel SA. Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis Applied Physics Letters. 93. DOI: 10.1063/1.2970045  0.84
2008 Armstrong A, Caudill J, Corrion A, Poblenz C, Mishra UK, Speck JS, Ringel SA. Characterization of majority and minority carrier deep levels in p -type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy Journal of Applied Physics. 103. DOI: 10.1063/1.2891673  0.84
2008 Arehart AR, Corrion A, Poblenz C, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1750-1752. DOI: 10.1002/pssc.200778622  0.84
2007 Smith PE, Lueck M, Ringel SA, Brillson LJ. Atomic diffusion and electronic structure in Al0.52 In0.48 PGaAs heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1916-1921. DOI: 10.1116/1.2811705  0.84
2007 Mosbacker HL, El Hage S, Gonzalez M, Ringel SA, Hetzer M, Look DC, Cantwell G, Zhang J, Song JJ, Brillson LJ. Role of subsurface defects in metal- ZnO (000 1-) Schottky barrier formation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1405-1411. DOI: 10.1116/1.2756543  0.84
2007 Wilt DM, Ringel SA, Fitzgerald EA, Jenkins PP, Walters R. Preliminary on-orbit performance data from GaAs on Si solar cells aboard MISSE5 Conference Record of the 2006 Ieee 4th World Conference On Photovoltaic Energy Conversion, Wcpec-4. 2: 1915-1918. DOI: 10.1109/WCPEC.2006.279871  0.84
2007 Liu D, Hudait M, Lin Y, Ringel SA, Lu W. 80nm In0.52Al0.48As/In0.53Ga 0.47As/InAs0.3P0.7 composite channel HEMT with an fT of 280GHz 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422511  0.84
2007 Armstrong A, Chakraborty A, Speck JS, DenBaars SP, Mishra UK, Ringel SA. Characterization and discrimination of AlGaN- and GaN-related deep levels in AlGaN/GaN heterostructures Aip Conference Proceedings. 893: 223-224. DOI: 10.1063/1.2729849  0.84
2007 Lin Y, Carlin JA, Arehart AR, Carlin AM, Ringel SA. High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy Applied Physics Letters. 90. DOI: 10.1063/1.2430403  0.84
2007 Liu D, Hudait M, Lin Y, Kim H, Ringel SA, Lu W. Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs Solid-State Electronics. 51: 838-841. DOI: 10.1016/j.sse.2007.04.002  0.84
2007 Armstrong A, Corrion A, Poblenz C, Mishra UK, Speck JS, Ringel SA. Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy (Physica Status Solidi (B) (2007) 244:6 (1867-1871)) Physica Status Solidi (B) Basic Research. 244: 4692. DOI: 10.1002/pssb.200740116  0.84
2007 Armstrong A, Poblenz C, Mishra UK, Speck JS, Ringel SA. Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy Physica Status Solidi (B) Basic Research. 244: 1867-1871. DOI: 10.1002/pssb.200674831  0.84
2006 Carlin JA, Andre CL, Kwon O, González M, Lueck MR, Fitzgerald EA, Wilt DM, Ringel SA. III-V device integration on silicon via metamorphic SiGe substrates Ecs Transactions. 3: 729-743. DOI: 10.1149/1.2355868  0.84
2006 Lueck MR, Andre CL, Pitera AJ, Lee ML, Fitzgerald EA, Ringel SA. Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage Ieee Electron Device Letters. 27: 142-144. DOI: 10.1109/LED.2006.870250  0.84
2006 Armstrong A, Chakraborty A, Speck JS, DenBaars SP, Mishra UK, Ringel SA. Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN/GaN heterostructures using capacitance deep level optical spectroscopy Applied Physics Letters. 89. DOI: 10.1063/1.2424670  0.84
2006 Gao M, Bradley ST, Cao Y, Jena D, Lin Y, Ringel SA, Hwang J, Schaff WJ, Brillson LJ. Compositional modulation and optical emission in AlGaN epitaxial films Journal of Applied Physics. 100. DOI: 10.1063/1.2382622  0.84
2006 Hudait MK, Lin Y, Sinha PM, Lindemuth JR, Ringel SA. Carrier compensation and scattering mechanisms in Si-doped InAs yP 1-y layers grown on InP substrates using intermediate InAs yP 1-y step-graded buffers Journal of Applied Physics. 100. DOI: 10.1063/1.2349358  0.84
2006 Arehart AR, Moran B, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics Journal of Applied Physics. 100. DOI: 10.1063/1.2219985  0.84
2006 Kwon O, Boeckl JJ, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy Journal of Applied Physics. 100. DOI: 10.1063/1.2209068  0.84
2006 Armstrong A, Poblenz C, Green DS, Mishra UK, Speck JS, Ringel SA. Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy Applied Physics Letters. 88. DOI: 10.1063/1.2179375  0.84
2006 Liu D, Hudait M, Lin Y, Kim H, Ringel SA, Lu W. In0.53Ga0.47As/InAs0.3P0.7 composite channel high electron mobility transistors Electronics Letters. 42: 307-309. DOI: 10.1049/el:20063553  0.84
2006 Ringel SA, Kwon O, Lueck M, Boeckl J, Fitzgerald EA. III-V/Si device integration via metamorphic SiGe substrates Third International Sige Technology and Device Meeting, Istdm 2006 - Conference Digest. 2006.  0.84
2006 Lee K, Vanmil B, Luo M, Myers TH, Armstrong A, Ringel SA, Rummukainen M, Saarinen K. Compensation in Be-doped gallium nitride grown using molecular beam epitaxy Materials Research Society Symposium Proceedings. 892: 729-734.  0.84
2005 Tivarus C, Pelz JP, Hudait MK, Ringel SA. Direct measurement of quantum confinement effects at metal to quantum-well nanocontacts. Physical Review Letters. 94: 206803. PMID 16090268 DOI: 10.1103/PhysRevLett.94.206803  0.84
2005 Smith PE, Goss SH, Gao M, Hudait MK, Lin Y, Ringel SA, Brillson LJ. Atomic diffusion and band lineups at In0.53Ga0.47As -on-InP heterointerfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1832-1837. DOI: 10.1116/1.1949218  0.84
2005 Liu D, Hudait M, Lin Y, Kim H, Ringel SA, Lu W. 0.25μm in0.52Al0.48As/In0.53Ga 0.47As/InAs0.3P0.7 composite channel HEMTs with an fT of 115GHz Asia-Pacific Microwave Conference Proceedings, Apmc. 2. DOI: 10.1109/APMC.2005.1606394  0.84
2005 Gao M, Lin Y, Bradley ST, Ringel SA, Hwang J, Schaff WJ, Brillson LJ. Spontaneous compositional superlattice and band-gap reduction in Si-doped Al xGa 1-xN epilayers Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2126127  0.84
2005 Tivarus C, Pelz JP, Hudait MK, Ringel SA. Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2120899  0.84
2005 Tivarus C, Park KB, Hudait MK, Ringel SA, Pelz JP. Nanoscale characterization of metal/semiconductor nanocontacts Aip Conference Proceedings. 788: 280-284. DOI: 10.1063/1.2062977  0.84
2005 Armstrong A, Arehart AR, Green D, Mishra UK, Speck JS, Ringel SA. Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon Journal of Applied Physics. 98. DOI: 10.1063/1.2005379  0.84
2005 Hudait MK, Lin Y, Goss SH, Smith P, Bradley S, Brillson LJ, Johnston SW, Ahrenkiel RK, Ringel SA. Evidence of interface-induced persistent photoconductivity in InP/In 0.53Ga 0.47As/InP double heterostructures grown by molecular-beam epitaxy Applied Physics Letters. 87. DOI: 10.1063/1.1994948  0.84
2005 Andre CL, Wilt DM, Pitera AJ, Lee ML, Fitzgerald EA, Ringel SA. Impact of dislocation densities on n +/p and p +/n junction GaAs diodes and solar cells on SiGe virtual substrates Journal of Applied Physics. 98. DOI: 10.1063/1.1946194  0.84
2005 Lin Y, Hudait MK, Johnston SW, Ahrenkiel RK, Ringel SA. Photoconductivity decay in metamorphic InAsPInGaAs double heterostructures grown on in Asy P1-y compositionally step-graded buffers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1866645  0.84
2005 Armstrong A, Arehart AR, Ringel SA. A method to determine deep level profiles in highly compensated, wide band gap semiconductors Journal of Applied Physics. 97. DOI: 10.1063/1.1862321  0.84
2005 Kwon O, Boeckl J, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge/SiGe/Si substrates Journal of Applied Physics. 97. DOI: 10.1063/1.1835539  0.84
2005 Armstrong A, Arehart A, Green D, Speck JS, Mishra UK, Ringel SA. A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si Physica Status Solidi C: Conferences. 2: 2411-2414. DOI: 10.1002/pssc.200461594  0.84
2005 Kwon O, Lin Y, Boeckl J, Ringel SA. Growth and properties of digitally-alloyed AlGaInP by solid source molecular beam epitaxy Journal of Electronic Materials. 34: 1301-1306.  0.84
2005 Ringel SA, Andre CL, Fitzgerald EA, Pitera AJ, Wilt DM. Multi-junction III-V photovoltaics on lattice-engineered Si sustrates Conference Record of the Ieee Photovoltaic Specialists Conference. 567-570.  0.84
2005 Lueck M, González M, Kwon O, Andre C, Ringel SA. Impact of annealing and V:III ratio on properties of MBE grown wide-bandgap AIGaInP materials and solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 711-714.  0.84
2005 Armstrong A, Green D, Arehart AR, Mishra UK, Speck JS, Ringel SA. Carbon-related deep states in compensated n-type and semi-insulating GaN:C and their influence on yellow luminescence Materials Research Society Symposium Proceedings. 831: 311-316.  0.84
2005 Liu D, Hudait M, Lin Y, Kim H, Ringel SA, Lu W. Growth, fabrication and characterization of in0.52Al 0.48As/In0.53Ga0.47As/InAs0.3P 0.7 composite channel HEMTs 2005 International Semiconductor Device Research Symposium. 2005: 9-10.  0.84
2005 Ringel SA, Andre CL, Lueck M, Isaacson D, Pitera AJ, Fitzgerald EA, Wilt DM. III-V multi-junction materials and solar cells on engineered SiGe/Si substrates Materials Research Society Symposium Proceedings. 836: 211-222.  0.84
2004 Andre CL, Boeckl JJ, Wilt DM, Pitera AJ, Lee ML, Fitzgerald EA, Keyes BM, Ringel SA. Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates Applied Physics Letters. 84: 3447-3449. DOI: 10.1063/1.1736318  0.84
2004 Hudait MK, Lin Y, Palmisiano MN, Tivarus C, Pelz JP, Ringel SA. Comparison of mixed anion, InAs yP 1-y and mixed cation, In xAl 1-xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates Journal of Applied Physics. 95: 3952-3960. DOI: 10.1063/1.1667006  0.84
2004 Armstrong A, Arehart AR, Moran B, DenBaars SP, Mishra UK, Speck JS, Ringel SA. Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 84: 374-376. DOI: 10.1063/1.1643540  0.84
2004 Smith PE, Goss SH, Bradley ST, Hudait MK, Lin Y, Ringel SA, Brillson LJ. Atomic layer diffusion and electronic structure at In 0.53Ga 0.47As/InP interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 554-559.  0.84
2003 Kwon O, Jazwiecki MM, Sacks RN, Ringel SA. High-Performance, Metamorphic InxGa1-xAs Tunnel Diodes Grown by Molecular Beam Epitaxy Ieee Electron Device Letters. 24: 613-615. DOI: 10.1109/LED.2003.817380  0.84
2003 Hudait MK, Lin Y, Palmisiano MN, Ringel SA. 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices grown on InAsyP1-y step-graded buffers by molecular beam epitaxy Ieee Electron Device Letters. 24: 538-540. DOI: 10.1109/LED.2003.816591  0.84
2003 Armstrong A, Arehart AR, Moran B, DenBaars SP, Mishra UK, Speck JS, Ringel SA. Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 42-48. DOI: 10.1109/ISCSPC.2003.1354429  0.84
2003 Ringel SA, Armstrong A, Arehart A, Moran B, Mishra UK, Speck JS. Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 4-5. DOI: 10.1109/ISCS.2003.1239877  0.84
2003 Andre CL, Boeckl JJ, Leitz CW, Currie MT, Langdo TA, Fitzgerald EA, Ringel SA. Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates Journal of Applied Physics. 94: 4980-4985. DOI: 10.1063/1.1610243  0.84
2003 Hudait MK, Lin Y, Wilt DM, Wu F, Speck JS, Tivarus CA, Heller ER, Pelz JP, Ringel SA. Erratum: “High-quality InAsyP1−y step-graded buffer by molecular-beam epitaxy” [Appl. Phys. Lett. 82, 3212 (2003)] Applied Physics Letters. 83: 587-587. DOI: 10.1063/1.1593822  0.64
2003 Hudait MK, Lin Y, Wilt DM, Speck JS, Tivarus CA, Heller ER, Pelz JP, Ringel SA. High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy Applied Physics Letters. 82: 3212-3214. DOI: 10.1063/1.1572476  0.84
2003 Kwon O, Boeckl J, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Growth and properties of AlGaInP resonant cavity light emitting diodes (RCLEDs) on Ge/SiGe/Si substrates Materials Research Society Symposium - Proceedings. 799: 161-166.  0.84
2003 Armstrong A, Arehart AR, Ringel SA, Moran B, DenBaars SP, Mishra UK, Speck JS. Identification of carbon-related bandgap states in GaN grown by MOCVD Materials Research Society Symposium - Proceedings. 798: 509-514.  0.84
2003 Arehart AR, Poblenz C, Heying B, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Influence of growth parameters on the deep level spectrum in MBE-grown n-GaN Materials Research Society Symposium - Proceedings. 798: 735-740.  0.84
2003 Fitzgerald EA, Groenert ME, Pitera A, Lee ML, Yang V, Carlin JA, Leitz CW, Andre CL, Ringel SA. The science and applications of relaxed semiconductor alloys on conventional substrates Proceedings of the 3rd World Conference On Photovoltaic Energy Conversion. 587-592.  0.84
2002 Hudait MK, Lin Y, Andre CL, Sinha PM, Tivarus CA, Pelz JP, Wilt DM, Ringel SA. Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE Mrs Proceedings. 722. DOI: 10.1557/PROC-722-K10.2  0.64
2002 Hudait MK, Andre CL, Kwon O, Palmisiano MN, Ringel SA. High-performance In0.53Ga0.47As thermophotovoltaic devices grown by solid source molecular beam epitaxy Ieee Electron Device Letters. 23: 697-699. DOI: 10.1109/LED.2002.806295  0.84
2002 Kaplar RJ, Ringel SA, Kurtz SR, Klem JF, Allerman AA. Deep-level defects in InGaAsN grown by molecular-beam epitaxy Applied Physics Letters. 80: 4777-4779. DOI: 10.1063/1.1483912  0.84
2002 Hierro A, Arehart AR, Heying B, Hansen M, Mishra UK, Denbaars SP, Speck JS, Ringel SA. Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 80: 805-807. DOI: 10.1063/1.1445274  0.84
2002 Ringel SA, Carlin JA, Andre CL, Hudait MK, Gonzalez M, Wilt DM, Clark EB, Jenkins P, Scheiman D, Allerman A, Fitzgerald EA, Leitz CW. Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers Progress in Photovoltaics: Research and Applications. 10: 417-426. DOI: 10.1002/pip.448  0.84
2002 Kaplar RJ, Ringel SA, Kurtz SR, Allerman AA, Klem JF. Comparison of deep level spectra of MBE- and MOCVD-grown InGaAsN Materials Research Society Symposium - Proceedings. 719: 403-408.  0.84
2002 Hudait MK, Lin Y, Andre CL, Sinha PM, Tivarus CA, Pelz JP, Wilt DM, Ringel SA. Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE Materials Research Society Symposium - Proceedings. 722: 287-292.  0.84
2001 Kaplar RJ, Arehart AR, Ringel SA, Allerman AA, Sieg RM, Kurtz SR. Deep levels and their impact on generation current in Sn-doped InGaAsN Journal of Applied Physics. 90: 3405-3408. DOI: 10.1063/1.1396832  0.84
2001 Kaplar RJ, Kwon D, Ringel SA, Allerman AA, Kurtz SR, Jones ED, Sieg RM. Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III-V solar cells Solar Energy Materials and Solar Cells. 69: 85-91. DOI: 10.1016/S0927-0248(00)00380-9  0.84
2001 Carlin JA, Ringel SA, Fitzgerald A, Bulsara M. High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics Solar Energy Materials and Solar Cells. 66: 621-630. DOI: 10.1016/S0927-0248(00)00250-6  0.84
2001 Hierro A, Hansen M, Boeckl JJ, Zhao L, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Carrier trapping and recombination at point defects and dislocations in MOCVD n-GaN Physica Status Solidi (B) Basic Research. 228: 937-946. DOI: 10.1002/1521-3951(200112)228:3<937::AID-PSSB937>3.0.CO;2-T  0.84
2001 Hierro A, Arehart AR, Heying B, Hansen M, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Capture kinetics of electron traps in MBE-grown n-GaN Physica Status Solidi (B) Basic Research. 228: 309-313. DOI: 10.1002/1521-3951(200111)228:1<309::AID-PSSB309>3.0.CO;2-N  0.84
2000 Carlin JA, Hudait MK, Ringel SA, Wilt DM, Clark EB, Leitz CW, Currie M, Langdo T, Fitzgerald EA. High efficiency GaAs-on-Si solar cells with high Voc using graded GeSi buffers Conference Record of the Ieee Photovoltaic Specialists Conference. 2000: 1006-1011. DOI: 10.1109/PVSC.2000.916056  0.84
2000 Carlin JA, Ringel SA, Fitzgerald EA, Bulsara M. High quality GaAs growth by MBE on Si using GeSi buffers and prospects for space photovoltaics Progress in Photovoltaics: Research and Applications. 8: 323-332. DOI: 10.1002/1099-159X(200005/06)8:3<323::AID-PIP322>3.0.CO;2-U  0.84
2000 Carlin JA, Ringel SA, Fitzgerald EA, Bulsara M, Keyes BM. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates Applied Physics Letters. 76: 1884-1886.  0.84
2000 Hierro A, Kwon D, Ringel SA, Rubini S, Pelucchi E, Franciosi A. Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beam epitaxy Journal of Applied Physics. 87: 730-738.  0.84
2000 Hierro A, Ringel SA, Hansen M, Speck JS, Mishra UK, DenBaars SP. Hydrogen passivation of deep levels in n-GaN Applied Physics Letters. 77: 1499-1501.  0.84
2000 Hierro A, Kwon D, Ringel SA, Hansen M, Mishra UK, Denbaars SP, Speck JS. Deep levels in n-type Schottky and p+-n homojunction GaN diodes Materials Research Society Symposium - Proceedings. 595.  0.84
2000 Hierro A, Kwon D, Ringel SA, Hansen M, Mishra UK, DenBaars SP, Speck JS. Deep levels in n-type Schottky and p +-n homojunction GaN diodes Mrs Internet Journal of Nitride Semiconductor Research. 5.  0.84
2000 Hierro A, Kwon D, Ringel SA, Hansen M, Speck JS, Mishra UK, DenBaars SP. Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes Applied Physics Letters. 76: 3064-3066.  0.84
1999 Kwon D, Kaplar RJ, Boeckl JJ, Ringel SA, Allerman AA, Kurtz SR, Jones ED. Deep level defect studies in MOCVD-grown InxGa1-xAs1-yNy films lattice-matched to GaAs Materials Research Society Symposium - Proceedings. 535: 59-64. DOI: 10.1557/PROC-535-59  0.84
1999 Kwon D, Kaplar RJ, Ringel SA, Allerman AA, Kurtz SR, Jones ED. Deep levels in p-type InGaAsN lattice matched to GaAs Applied Physics Letters. 74: 2830-2832.  0.84
1999 Xu Q, Hsu JWP, Carlin JA, Sieg RM, Boeckl JJ, Ringel SA. Topographic and electronic studies of wedge-shape surface defects on AiGaAs/GaAs films grown on ge substrates Applied Physics Letters. 75: 2111-2113.  0.84
1999 Hierro A, Kwon D, Goss SH, Brillson LJ, Ringel SA, Rubini S, Pelucchi E, Franciosi A. Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy Applied Physics Letters. 75: 832-834.  0.84
1998 Anderson BL, Pelz LJ, Ringel SA, Clymer BD, Collins SA. Photonics laboratory with emphasis on technical diversity Ieee Transactions On Education. 41: 194-202. DOI: 10.1109/13.704545  0.84
1998 Ringel SA, Grillot PN. Chapter 6 Electronic Properties and Deep Levels in Germanium-Silicon Semiconductors and Semimetals. 56: 293-346. DOI: 10.1016/S0080-8784(08)62584-3  0.84
1998 Ringel SA, Chatterjee B. Electrical deactivation of interstitial Zn in heteroepitaxial InP by hydrogen and its effect on electronic properties Journal of Applied Physics. 83: 5904-5912.  0.84
1998 Ting SM, Fitzgerald EA, Sieg RM, Ringel SA. Range of defect morphologies on GaAs grown on offcut (001) Ge substrates Journal of Electronic Materials. 27: 451-461.  0.84
1998 Carlin JA, Ringel SA, Sacks RN, Yap KS. Role of Al content on surface structure evolution of low temperature AlxGa1-xAs and its effect on critical thickness Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1372-1376.  0.84
1998 Sieg RM, Ringel SA, Ting SM, Fitzgerald EA, Sacks RN. Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion Journal of Electronic Materials. 27: 900-907.  0.84
1998 Sieg RM, Ringel SA, Ting SM, Samavedam SB, Currie M, Langdo T, Fitzgerald EA. Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1-xGex/Si substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1471-1474.  0.84
1998 Xu Q, Hsu JWP, Ting SM, Fitzgerald EA, Sieg RM, Ringel SA. Scanning force microscopy studies of GaAs films grown on offcut Ge substrates Journal of Electronic Materials. 27: 1010-1016.  0.84
1997 Ringel SA. Hydrogen-extended defect interactions in heteroepitaxial InP materials and devices Solid-State Electronics. 41: 359-380.  0.84
1997 Ringel SA, Grillot PN. Dislocation interactions and their impact on electrical properties of GeSi-based heterostructures Materials Research Society Symposium - Proceedings. 442: 313-324.  0.84
1997 Ringel SA, Sieg RM, Ting SM, Fitzgerald EA. Anti-phase domain-free GaAs on Ge substrates grown by molecular beam epitaxy for space solar cell applications Conference Record of the Ieee Photovoltaic Specialists Conference. 793-798.  0.84
1997 Ringel SA, Chatterjee B, Hoffman RW. Hydrogen passivation of interstitial Zn defects in hetero-epitaxial InP cell structures and influence on device characteristics Progress in Photovoltaics: Research and Applications. 5: 423-431.  0.84
1997 Chatterjee B, Ringel SA, Hoffman RW. Hydrogen-interstitial Zn defect complexes and their effects on the device characteristics of heteroepitaxial p+n InP cell structures Conference Record of the Ieee Photovoltaic Specialists Conference. 907-910.  0.84
1997 Sieg RM, Sacks RN, Ringel SA. Application of pyrometric interferometry to the in situ monitoring of In0.52Al0.48As, In0.53Ga0.47As, and quaternary alloy growth on InP substrates Journal of Crystal Growth. 175: 256-261.  0.84
1997 Hoffman RW, Fatemi NS, Weizer VG, Jenkins PP, Stan MA, Ringel SA, Scheiman DA, Wilt DM, Brinker DJ. High beginning-of-life efficiency p/n InP solar cells Progress in Photovoltaics: Research and Applications. 5: 415-422.  0.84
1996 Chatterjee B, Ringel SA. Effect of extended defects on the formation and dissociation kinetics of Zn-H complexes in heteroepitaxial p-type InP layers Applied Physics Letters. 69: 839-841.  0.84
1996 Grillot PN, Ringel SA. Identification of compositionally invariant deep levels introduced by plastic strain in epitaxial Ge0.30Si0.70 and deformed bulk Si Applied Physics Letters. 69: 2110-2112.  0.84
1996 Sieg RM, Ringel SA. Reabsorption, band-gap narrowing, and the reconciliation of photoluminescence spectra with electrical measurements for epitaxial n-InP Journal of Applied Physics. 80: 448-458.  0.84
1996 Chatterjee B, Ringel SA, Hoffman R. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures Progress in Photovoltaics: Research and Applications. 4: 91-100.  0.84
1996 Chatterjee B, Ringel SA, Hoffman R. Comparison of hydrogen passivation in heteroepitaxial N+P and P+N solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 179-182.  0.84
1996 Grillot PN, Ringel SA, Fitzgerald EA. Effect of composition on deep levels in heteroepitaxial GexSi1-x layers and evidence for dominant intrinsic recombination-generation in relaxed Ge layers on Si Journal of Electronic Materials. 25: 1028-1036.  0.84
1996 Sacks RN, Sieg RM, Ringel SA. Investigation of the accuracy of pyrometric interferometry in determining AlxGa1-xAs growth rates and compositions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 2157-2162.  0.84
1996 Grillot PN, Ringel SA, Michel J, Fitzgerald EA. Structural, electronic, and luminescence investigation of strain-relaxation induced electrical conductivity type conversion in GeSi/Si heterostructures Journal of Applied Physics. 80: 2823-2832.  0.84
1996 Sieg RM, Sacks RN, Grillot PN, Ringel SA. Improved substrate temperature stability during molecular beam epitaxy growth using indium free mounting of small substrates of various shapes Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 3283-3287.  0.84
1995 Mena RA, Schacham SE, Haugland EJ, Alterovitz SA, Young PG, Bibyk SB, Ringel SA. Characterization of the transport properties of channel delta-doped structures by light-modulated Shubnikov-de Haas measurements Journal of Applied Physics. 78: 6626-6632. DOI: 10.1063/1.360484  0.84
1995 Mena RA, Schacham SE, Haugland EJ, Alterovitz SA, Bibyk SB, Ringel SA. Subband quantum scattering times for AlGaAs/GaAs obtained using digital filtering Journal of Applied Physics. 78: 3940-3944. DOI: 10.1063/1.359913  0.84
1995 Grillot PN, Ringel SA, Fitzgerald EA, Watson GP, Xie YH. Minority- and majority-carrier trapping in strain-relaxed Ge 0.3Si0.7/Si heterostructure diodes grown by rapid thermal chemical-vapor deposition Journal of Applied Physics. 77: 676-685. DOI: 10.1063/1.359054  0.84
1995 Grillot PN, Ringel SA, Fitzgerald EA, Watson GP, Xie YH. Electron trapping kinetics at dislocations in relaxed Ge 0.3Si0.7/Si heterostructures Journal of Applied Physics. 77: 3248-3256. DOI: 10.1063/1.358678  0.84
1995 Chatterjee B, Ringel SA. Hydrogen passivation and its effects on carrier trapping by dislocations in InP/GaAs heterostructures Journal of Applied Physics. 77: 3885-3898. DOI: 10.1063/1.358567  0.84
1995 Sieg RM, Chatterjee B, Ringel SA. Evidence for enhanced zinc interstitial concentration in strain-relaxed heteroepitaxial indium phosphide Applied Physics Letters. 3108. DOI: 10.1063/1.113618  0.84
1994 Chatterjee B, Ringel SA, Sieg R, Hoffman R, Weinberg I. Hydrogen passivation of dislocations in InP on GaAs heterostructures Applied Physics Letters. 65: 58-60. DOI: 10.1063/1.113073  0.84
1994 Chatterjee B, Ringel SA, Sieg R, Weinberg I, Hoffman R. Deep level characterization and passivation in heteroepitaxial InP Materials Research Society Symposium Proceedings. 325: 125-130.  0.84
1994 Grillot PN, Ringel SA, Watson GP, Fitzgerald EA, Xie YH. Electronic characterization of dislocations in RTCVD germanium-silicon/silicon grown by graded layer epitaxy Materials Research Society Symposium Proceedings. 325: 159-164.  0.84
1994 Ringel SA, Chatterjee B, Sieg RM, Schnetzer EV, Hoffman R. Material quality and dislocation trapping in hydrogen passivated heteroepitaxial InP/GaAs and InP/Ge solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 2204-2207.  0.84
1992 Rohatgi A, Ringel SA, Sudharsanan R, Chou HC. An improved understanding of efficiency limiting defects in polycrystalline CdTe/CdS solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 962-966.  0.84
1991 Ringel SA, Rohatgi A. The Effects of Trap-Induced Lifetime Variations on the Design and Performance of High-Efficiency GaAs Solar Cells Ieee Transactions On Electron Devices. 38: 2402-2409. DOI: 10.1109/16.97400  0.84
1991 Ringel SA, Smith AW, MacDougal MH, Rohatgi A. The effects of CdCl2 on the electronic properties of molecular-beam epitaxially grown CdTe/CdS heterojunction solar cells Journal of Applied Physics. 70: 881-889. DOI: 10.1063/1.349652  0.84
1991 Rohatgi A, Sudharsanan R, Ringel SA, MacDougal MH. Growth and process optimization of CdTe and CdZnTe polycrystalline films for high efficiency solar cells Solar Cells. 30: 109-122. DOI: 10.1016/0379-6787(91)90043-O  0.84
1990 Ringel SA, Sudharsanan R, Rohatgi A, Owens MS, Giilis HP. Effects of annealing and surface preparation on the properties of poiycrystalline CdZnTe films grown by molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2012-2019. DOI: 10.1116/1.576798  0.84
1990 Ringel SA, Sudharsanan R, Rohatgi A, Carter WB. A study of polycrystalline Cd(Zn, Mn)Te/Cds films and interfaces Journal of Electronic Materials. 19: 259-263. DOI: 10.1007/BF02733816  0.84
1989 Ringel SA, Rohatgi A, Tobin SP. An Approach Toward 25-Percent Efficient GaAs Heteroface Solar Cells Ieee Transactions On Electron Devices. 36: 1230-1237. DOI: 10.1109/16.30927  0.84
1989 Rohatgi A, Ringel SA, Sudharsanan R, Meyers PV, Liu CH, Ramanathan V. Investigation of polycrystalline CdZnTe, CdMnTe, and CdTe films for photovoltaic applications Solar Cells. 27: 219-230. DOI: 10.1016/0379-6787(89)90030-6  0.84
1988 DeWald AB, Frost RL, Ringel SA, Schaffer JP, Rohatgi A, Nielsen B, Lynn KG. Positron annihilation spectroscopy of AlGaAs/GaAs interfaces in metalorganic chemical vapor deposition grown GaAs heterojunction solar cellsa) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2248-2252. DOI: 10.1116/1.575019  0.84
1988 Rohatgi A, Ringel SA, Welch J, Meeks E, Pollard K, Erbil A, Summers CJ, Meyers PV, Liu CH. Growth and characterization of CdMnTe and CdZnTe polycrystalline thin films for solar cells Solar Cells. 24: 185-194. DOI: 10.1016/0379-6787(88)90048-8  0.84
1988 Ringel SA, Rohatgi A. Material quality and design optimization for high efficiency GaAs solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1: 666-671.  0.84
1988 Rohatgi A, Sudharsanan R, Ringel SA, Meyers PV, Liu CH. Wide bandgap thin film solar cells from CdTe alloys Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 1477-1481.  0.84
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