| Year |
Citation |
Score |
| 2020 |
Lepkowski DL, Kasher T, Boyer JT, Chmielewski DJ, Grassman TJ, Ringel SA. The Critical Role of AlInP Window Design in III–V Rear-Emitter Solar Cells Ieee Journal of Photovoltaics. 10: 758-764. DOI: 10.1109/Jphotov.2020.2978863 |
0.414 |
|
| 2020 |
Zhang Y, Chen Z, Li W, Lee H, Karim R, Arehart AR, Ringel SA, Rajan S, Zhao H. Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Journal of Applied Physics. 127: 215707. DOI: 10.1063/5.0008758 |
0.665 |
|
| 2020 |
Kalarickal NK, Xia Z, McGlone JF, Liu Y, Moore W, Arehart AR, Ringel SA, Rajan S. High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer Journal of Applied Physics. 127: 215706. DOI: 10.1063/5.0005531 |
0.679 |
|
| 2020 |
Ghadi H, McGlone JF, Jackson CM, Farzana E, Feng Z, Bhuiyan AFMAU, Zhao H, Arehart AR, Ringel SA. Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition Apl Materials. 8: 021111. DOI: 10.1063/1.5142313 |
0.691 |
|
| 2020 |
Feng Z, Bhuiyan AFMAU, Xia Z, Moore W, Chen Z, McGlone JF, Daughton DR, Arehart AR, Ringel SA, Rajan S, Zhao H. Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga 2 O 3 Physica Status Solidi-Rapid Research Letters. 14: 2000145. DOI: 10.1002/Pssr.202000145 |
0.608 |
|
| 2019 |
Zhang Y, Xia Z, Mcglone J, Sun W, Joishi C, Arehart AR, Ringel SA, Rajan S. Evaluation of Low-Temperature Saturation Velocity in
$\beta$
-(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors Ieee Transactions On Electron Devices. 66: 1574-1578. DOI: 10.1109/Ted.2018.2889573 |
0.644 |
|
| 2019 |
Sun W, Joh J, Krishnan S, Pendharkar S, Jackson CM, Ringel SA, Arehart AR. Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs Ieee Transactions On Electron Devices. 66: 890-895. DOI: 10.1109/Ted.2018.2888840 |
0.725 |
|
| 2019 |
Joishi C, Zhang Y, Xia Z, Sun W, Arehart AR, Ringel S, Lodha S, Rajan S. Breakdown Characteristics of $\beta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors Ieee Electron Device Letters. 40: 1241-1244. DOI: 10.1109/Led.2019.2921116 |
0.641 |
|
| 2019 |
Xia Z, Xue H, Joishi C, Mcglone J, Kalarickal NK, Sohel SH, Brenner M, Arehart A, Ringel S, Lodha S, Lu W, Rajan S. $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Ieee Electron Device Letters. 40: 1052-1055. DOI: 10.1109/Led.2019.2920366 |
0.639 |
|
| 2019 |
Lepkowski DL, Boyer JT, Chmielewski DJ, Silvaggio AC, Ringel SA, Grassman TJ. Investigation of Rear-Emitter GaAs0.75P0.25 Top Cells for Application to III–V/Si Tandem Photovoltaics Ieee Journal of Photovoltaics. 9: 1644-1651. DOI: 10.1109/Jphotov.2019.2939069 |
0.451 |
|
| 2019 |
Johnson JM, Chen Z, Varley JB, Jackson CM, Farzana E, Zhang Z, Arehart AR, Huang H, Genc A, Ringel SA, Van de Walle CG, Muller DA, Hwang J. Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
β−Ga2O3 Physical Review X. 9. DOI: 10.1103/Physrevx.9.041027 |
0.657 |
|
| 2019 |
Xia Z, Chandrasekar H, Moore W, Wang C, Lee AJ, McGlone J, Kalarickal NK, Arehart A, Ringel S, Yang F, Rajan S. Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Applied Physics Letters. 115: 252104. DOI: 10.1063/1.5130669 |
0.672 |
|
| 2019 |
Farzana E, Mauze A, Varley JB, Blue TE, Speck JS, Arehart AR, Ringel SA. Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy Apl Materials. 7: 121102. DOI: 10.1063/1.5126463 |
0.694 |
|
| 2019 |
Kalarickal NK, Xia Z, McGlone J, Krishnamoorthy S, Moore W, Brenner M, Arehart AR, Ringel SA, Rajan S. Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 Applied Physics Letters. 115: 152106. DOI: 10.1063/1.5123149 |
0.699 |
|
| 2019 |
McGlone JF, Xia Z, Joishi C, Lodha S, Rajan S, Ringel S, Arehart AR. Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs Applied Physics Letters. 115: 153501. DOI: 10.1063/1.5118250 |
0.721 |
|
| 2019 |
Chandrasekar H, Cheng J, Wang T, Xia Z, Combs NG, Freeze CR, Marshall PB, McGlone J, Arehart A, Ringel S, Janotti A, Stemmer S, Lu W, Rajan S. Velocity saturation in La-doped BaSnO3 thin films Applied Physics Letters. 115: 92102. DOI: 10.1063/1.5097791 |
0.669 |
|
| 2019 |
Gleason DA, Galiano K, Brown JL, Hilton AM, Ringel SA, Arehart AR, Heller ER, Dorsey DL, Pelz JP. Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing Applied Physics Letters. 114: 053510. DOI: 10.1063/1.5079745 |
0.643 |
|
| 2019 |
Farzana E, Chaiken MF, Blue TE, Arehart AR, Ringel SA. Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3 Apl Materials. 7: 022502. DOI: 10.1063/1.5054606 |
0.685 |
|
| 2018 |
Mcglone JF, Xia Z, Zhang Y, Joishi C, Lodha S, Rajan S, Ringel SA, Arehart AR. Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate Ieee Electron Device Letters. 39: 1042-1045. DOI: 10.1109/Led.2018.2843344 |
0.697 |
|
| 2018 |
Chmielewski DJ, Lepkowski DL, Boyer JT, Grassman TJ, Ringel SA. Comparative Study of ∼2.05 eV Lattice-Matched and Metamorphic (Al)GaInP Solar Cells Grown by MOCVD Ieee Journal of Photovoltaics. 8: 1601-1607. DOI: 10.1109/Jphotov.2018.2868032 |
0.42 |
|
| 2018 |
Farzana E, Foronda HM, Jackson CM, Razzak T, Zhang Z, Speck JS, Arehart AR, Ringel SA. Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies Journal of Applied Physics. 124: 145703. DOI: 10.1063/1.5050949 |
0.696 |
|
| 2018 |
Joishi C, Xia Z, McGlone J, Zhang Y, Arehart AR, Ringel S, Lodha S, Rajan S. Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors Applied Physics Letters. 113: 123501. DOI: 10.1063/1.5039502 |
0.657 |
|
| 2018 |
Galiano K, Deitz JI, Carnevale SD, Gleason DA, Paul PK, Zhang Z, McSkimming BM, Speck JS, Ringel SA, Grassman TJ, Arehart AR, Pelz JP. Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride Journal of Applied Physics. 123: 224504. DOI: 10.1063/1.5022806 |
0.693 |
|
| 2018 |
Farzana E, Ahmadi E, Speck JS, Arehart AR, Ringel SA. Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy Journal of Applied Physics. 123: 161410. DOI: 10.1063/1.5010608 |
0.701 |
|
| 2018 |
Grassman TJ, Galiano K, Deitz JI, Carnevale SD, Gleason DA, Zhang Z, Ringel SA, Arehart AR, Pelz JP. Correlative Defect Characterization in Semiconductors via Electron Channeling Contrast Imaging and Scanning Deep Level Transient Spectroscopy Microscopy and Microanalysis. 24: 1056-1057. DOI: 10.1017/S1431927618005767 |
0.634 |
|
| 2018 |
Altermatt PP, Xiong Z, He Q, Deng W, Ye F, Yang Y, Chen Y, Feng Z, Verlinden PJ, Liu A, Macdonald DH, Luka T, Lausch D, Turek M, Hagendorf C, ... ... Ringel SA, et al. High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells Solar Energy. 175: 68-74. DOI: 10.1016/J.Solener.2018.01.073 |
0.675 |
|
| 2017 |
Jackson CM, Arehart AR, Grassman TJ, McSkimming B, Speck JS, Ringel SA. Impact of Surface Treatment on Interface States of ALD Al2O3/GaN Interfaces Ecs Journal of Solid State Science and Technology. 6: P489-P494. DOI: 10.1149/2.0041708Jss |
0.62 |
|
| 2017 |
Karki S, Paul PK, Rajan G, Ashrafee T, Aryal K, Pradhan P, Collins RW, Rockett A, Grassman TJ, Ringel SA, Arehart AR, Marsillac S. In Situ and Ex Situ Investigations of KF Postdeposition Treatment Effects on CIGS Solar Cells Ieee Journal of Photovoltaics. 7: 665-669. DOI: 10.1109/Jphotov.2016.2637659 |
0.679 |
|
| 2017 |
Farzana E, Zhang Z, Paul PK, Arehart AR, Ringel SA. Influence of metal choice on (010) β-Ga2O3Schottky diode properties Applied Physics Letters. 110: 202102. DOI: 10.1063/1.4983610 |
0.625 |
|
| 2016 |
Nguyen XS, Goh XL, Zhang L, Zhang Z, Arehart AR, Ringel SA, Fitzgerald EA, Chua SJ. Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.060306 |
0.73 |
|
| 2016 |
Chen J, Puzyrev YS, Zhang EX, Fleetwood DM, Schrimpf RD, Arehart AR, Ringel SA, Kaun SW, Kyle ECH, Speck JS, Saunier P, Lee C, Pantelides ST. High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 16: 282-289. DOI: 10.1109/Tdmr.2016.2581178 |
0.672 |
|
| 2016 |
Zhang Z, Cardwell D, Sasikumar A, Kyle ECH, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Arehart AR, Ringel SA. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures Journal of Applied Physics. 119. DOI: 10.1063/1.4948298 |
0.691 |
|
| 2016 |
Zhang Z, Farzana E, Arehart AR, Ringel SA. Erratum: “Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy” [Appl. Phys. Lett. 108, 052105 (2016)] Applied Physics Letters. 108: 079901. DOI: 10.1063/1.4942431 |
0.618 |
|
| 2016 |
Zhang Z, Farzana E, Arehart AR, Ringel SA. Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy Applied Physics Letters. 108. DOI: 10.1063/1.4941429 |
0.687 |
|
| 2016 |
Liu X, Jackson CM, Wu F, Mazumder B, Yeluri R, Kim J, Keller S, Arehart AR, Ringel SA, Speck JS, Mishra UK. Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition Journal of Applied Physics. 119. DOI: 10.1063/1.4939157 |
0.705 |
|
| 2016 |
Arehart AR, Sasikumar A, Via GD, Poling B, Heller ER, Ringel SA. Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN Microelectronics Reliability. 56: 45-48. DOI: 10.1016/J.Microrel.2015.11.007 |
0.701 |
|
| 2016 |
Sasikumar A, Arehart AR, Cardwell DW, Jackson CM, Sun W, Zhang Z, Ringel SA. Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs Microelectronics Reliability. 56: 37-44. DOI: 10.1016/J.Microrel.2015.10.026 |
0.706 |
|
| 2016 |
Nguyen XS, Hou HW, Mierry PD, Vennéguès P, Tendille F, Arehart AR, Ringel SA, Fitzgerald EA, Chua SJ. Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy Physica Status Solidi B-Basic Solid State Physics. 253: 2225-2229. DOI: 10.1002/Pssb.201600364 |
0.674 |
|
| 2015 |
Deitz JI, Carnevale SD, Ringel SA, McComb DW, Grassman TJ. Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization. Journal of Visualized Experiments : Jove. e52745. PMID 26274560 DOI: 10.3791/52745 |
0.405 |
|
| 2015 |
Chen J, Puzyrev YS, Jiang R, Zhang EX, McCurdy MW, Fleetwood DM, Schrimpf RD, Pantelides ST, Arehart AR, Ringel SA, Saunier P, Lee C. Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs Ieee Transactions On Nuclear Science. 62: 2423-2430. DOI: 10.1109/Tns.2015.2488650 |
0.685 |
|
| 2015 |
Grassman TJ, Chmielewski DJ, Carnevale SD, Carlin JA, Ringel SA. GaAsP/Si dual-junction solar cells grown by MBE and MOCVD 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356384 |
0.665 |
|
| 2015 |
Chmielewski DJ, Carnevale S, Grassman TJ, Carlin JA, Ringel SA. High-performance metamorphic tunnel junctions for III-V/Si multijunction solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356382 |
0.677 |
|
| 2015 |
Garcia-Tabares E, Grassman TJ, Martin D, Carlin J, Rey-Stolle I, Ringel SA. Evolution of the silicon bottom cell photovoltaic behavior during III-V on Si multi-junction solar cells production 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356380 |
0.362 |
|
| 2015 |
Almansouri I, Bremner S, Ho-Baillie A, Ringel SA, Green MA. The design of single-junction GaAs and dual-junction GaAs/Si in the presence of threading dislocation density 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356245 |
0.394 |
|
| 2015 |
Paul PK, Cardwell DW, Jackson CM, Galiano K, Aryal K, Pelz JP, Marsillac S, Ringel SA, Grassman TJ, Arehart AR. Direct nm-scale spatial mapping of traps in CIGS 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355656 |
0.605 |
|
| 2015 |
Carlin AM, Fitzgerald EA, Ringel SA. III-V/SiGe on Si radiation hard space cells with Voc>2.6V 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355600 |
0.568 |
|
| 2015 |
Grassman TJ, Chmielewski DJ, Carnevale SD, Carlin JA, Ringel SA. GaAs 0.75P 0.25/Si Dual-Junction Solar Cells Grown by MBE and MOCVD Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2015.2493365 |
0.701 |
|
| 2015 |
Paul PK, Cardwell DW, Jackson CM, Galiano K, Aryal K, Pelz JP, Marsillac S, Ringel SA, Grassman TJ, Arehart AR. Direct nm-Scale Spatial Mapping of Traps in CIGS Ieee Journal of Photovoltaics. 5: 1482-1486. DOI: 10.1109/JPHOTOV.2015.2459971 |
0.539 |
|
| 2015 |
Almansouri I, Bremner S, Ho-Baillie A, Mehrvarz H, Hao X, Conibeer G, Grassman TJ, Carlin JA, Haas A, Ringel SA, Green MA. Designing bottom silicon solar cells for multijunction devices Ieee Journal of Photovoltaics. 5: 683-690. DOI: 10.1109/Jphotov.2014.2381875 |
0.693 |
|
| 2015 |
Carnevale SD, Deitz JI, Carlin JA, Picard YN, McComb DW, De Graef M, Ringel SA, Grassman TJ. Applications of electron channeling contrast imaging for the rapid characterization of extended defects in III-V/Si heterostructures Ieee Journal of Photovoltaics. 5: 676-682. DOI: 10.1109/Jphotov.2014.2379111 |
0.679 |
|
| 2015 |
Zhang Z, Farzana E, Sun WY, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, McSkimming B, Kyle ECH, Speck JS, Arehart AR, Ringel SA. Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN Journal of Applied Physics. 118. DOI: 10.1063/1.4933174 |
0.704 |
|
| 2015 |
Nguyen XS, Lin K, Zhang Z, McSkimming B, Arehart AR, Speck JS, Ringel SA, Fitzgerald EA, Chua SJ. Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106, 102101 (2015)] Applied Physics Letters. 106: 159903. DOI: 10.1063/1.4918373 |
0.628 |
|
| 2015 |
Zhang Z, Arehart AR, Kyle ECH, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Ringel SA. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 106. DOI: 10.1063/1.4905783 |
0.699 |
|
| 2015 |
Gür E, Akyol F, Krishnamoorthy S, Rajan S, Ringel SA. Deep level defects in N-rich and In-rich InxGa1-XN: In composition dependence Superlattices and Microstructures. DOI: 10.1016/J.Spmi.2016.05.009 |
0.45 |
|
| 2015 |
Sasikumar A, Arehart AR, Via GD, Winningham B, Poling B, Heller E, Ringel SA. Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps Microelectronics Reliability. 55: 2258-2262. DOI: 10.1016/J.Microrel.2015.07.048 |
0.686 |
|
| 2015 |
García-Tabarés E, Carlin JA, Grassman TJ, Martín D, Rey-Stolle I, Ringel SA. Evolution of silicon bulk lifetime during III-V-on-Si multijunction solar cell epitaxial growth Progress in Photovoltaics: Research and Applications. DOI: 10.1002/Pip.2703 |
0.696 |
|
| 2014 |
Sasikumar A, Arehart AR, Kaun SW, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Ringel SA. Defects in GaN based transistors Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2042020 |
0.699 |
|
| 2014 |
Ratcliff C, Grassman TJ, Carlin JA, Chmielewski DJ, Ringel SA. Ga-rich GaxIn1-xP solar cells on Si with 1.95 eV bandgap for ideal III-V/Si photovoltaics Proceedings of Spie - the International Society For Optical Engineering. 8981. DOI: 10.1117/12.2042017 |
0.688 |
|
| 2014 |
Carnevale SD, Deitz JI, Carlin JA, Picard YN, De Graef M, Ringel SA, Grassman TJ. Rapid characterization of extended defects in III-V/Si by electron channeling contrast imaging 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 2800-2803. DOI: 10.1109/PVSC.2014.6925512 |
0.62 |
|
| 2014 |
Chmielewski DJ, Grassman TJ, Carlin AM, Carlin JA, Speelman AJ, Ringel SA. Metamorphic GaAsP tunnel junctions for high-efficiency III-V/IV multijunction solar cell technology Ieee Journal of Photovoltaics. 4: 1301-1305. DOI: 10.1109/JPHOTOV.2014.2328592 |
0.69 |
|
| 2014 |
Grassman TJ, Carlin JA, Galiana B, Yang F, Mills MJ, Ringel SA. MOCVD-Grown GaP/Si subcells for integrated III-V/Si multijunction photovoltaics Ieee Journal of Photovoltaics. 4: 972-980. DOI: 10.1109/Jphotov.2014.2308727 |
0.72 |
|
| 2014 |
Sasikumar A, Cardwell DW, Arehart AR, Lu J, Kaun SW, Keller S, Mishra UK, Speck JS, Pelz JP, Ringel SA. Toward a physical understanding of the reliability-limiting E C-0.57 eV trap in GaN HEMTs Ieee International Reliability Physics Symposium Proceedings. 2C.1.1-2C.1.6. DOI: 10.1109/IRPS.2014.6860588 |
0.639 |
|
| 2014 |
Carnevale SD, Deitz JI, Carlin JA, Picard YN, De Graef M, Ringel SA, Grassman TJ. Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging Applied Physics Letters. 104. DOI: 10.1063/1.4883371 |
0.667 |
|
| 2014 |
Zhang Z, Jackson CM, Arehart AR, McSkimming B, Speck JS, Ringel SA. Direct determination of energy band alignments of Ni/Al2O 3/GaN MOS structures using internal photoemission spectroscopy Journal of Electronic Materials. 43: 828-832. DOI: 10.1007/S11664-013-2942-Z |
0.671 |
|
| 2013 |
Ringel SA, Carlin JA, Grassman TJ, Galiana B, Carlin AM, Ratcliff C, Chmielewski D, Yang L, Mills MJ, Mansouri A, Bremner SP, Ho-Baillie A, Hao X, Mehrvarz H, Conibeer G, et al. Ideal GaP/Si heterostructures grown by MOCVD: III-V/active-Si subcells, multijuntions, and MBE-to-MOCVD III-V/Si interface science Conference Record of the Ieee Photovoltaic Specialists Conference. 3383-3388. DOI: 10.1109/PVSC.2013.6745175 |
0.735 |
|
| 2013 |
Mansouri IA, Bremner S, Ho-Baillie A, Mehrvarz H, Hao X, Conibeer G, Green MA, Grassman TJ, Carlin JA, Ringel SA. Design of bottom silicon solar cell for multijunction devices Conference Record of the Ieee Photovoltaic Specialists Conference. 3310-3314. DOI: 10.1109/PVSC.2013.6745159 |
0.588 |
|
| 2013 |
Chmielewski DJ, Grassman TJ, Carlin AM, Carlin J, Speelman A, Ringel SA. Metamorphic tunnel junctions for high efficiency III-V/IV multi-junction solar cell technology Conference Record of the Ieee Photovoltaic Specialists Conference. 882-885. DOI: 10.1109/PVSC.2013.6744285 |
0.53 |
|
| 2013 |
Haas A, Sharps P, Aiken D, Grassman T, Carlin JA, Ringel S. Analysis of short- and long-term performance goals for III/V on active Si concentrator solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 867-872. DOI: 10.1109/PVSC.2013.6744282 |
0.613 |
|
| 2013 |
Grassman TJ, Shah DB, Carlin JA, Ringel SA. Exploration of epitaxial quantum dots within wide band gap metamorphic host materials for intermediate band solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 284-287. DOI: 10.1109/PVSC.2013.6744148 |
0.591 |
|
| 2013 |
Grassman TJ, Carlin JA, Ratcliff C, Chmielewski DJ, Ringel SA. Epitaxially-grown metamorphic GaAsP/Si dual-junction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 149-153. DOI: 10.1109/PVSC.2013.6744117 |
0.657 |
|
| 2013 |
Long RD, Jackson CM, Yang J, Hazeghi A, Hitzman C, Majety S, Arehart AR, Nishi Y, Ma TP, Ringel SA, McIntyre PC. Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen Applied Physics Letters. 103. DOI: 10.1063/1.4827102 |
0.67 |
|
| 2013 |
Zhang Z, Arehart AR, Cinkilic E, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, McSkimming B, Speck JS, Ringel SA. Impact of proton irradiation on deep level states in n-GaN Applied Physics Letters. 103. DOI: 10.1063/1.4816423 |
0.687 |
|
| 2013 |
Sasikumar A, Arehart AR, Martin-Horcajo S, Romero MF, Pei Y, Brown D, Recht F, Di Forte-Poisson MA, Calle F, Tadjer MJ, Keller S, Denbaars SP, Mishra UK, Ringel SA. Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters. 103. DOI: 10.1063/1.4813862 |
0.707 |
|
| 2013 |
Jackson CM, Arehart AR, Cinkilic E, McSkimming B, Speck JS, Ringel SA. Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies Journal of Applied Physics. 113. DOI: 10.1063/1.4808093 |
0.713 |
|
| 2013 |
Cardwell DW, Sasikumar A, Arehart AR, Kaun SW, Lu J, Keller S, Speck JS, Mishra UK, Ringel SA, Pelz JP. Spatially-resolved spectroscopic measurements of Ec - 0.57 eV traps in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4806980 |
0.697 |
|
| 2013 |
Grassman TJ, Carlin JA, Galiana B, Yang LM, Yang F, Mills MJ, Ringel SA. Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4801498 |
0.696 |
|
| 2013 |
Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA. Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics. 80: 19-22. DOI: 10.1016/J.Sse.2012.09.010 |
0.702 |
|
| 2012 |
Grassman TJ, Ratcliff C, Carlin AM, Carlin JA, Yang LM, Mills MJ, Ringel SA. III-V/GaP epitaxy on Si for advanced photovoltaics and green light emitters Ecs Transactions. 50: 321-322. DOI: 10.1149/05009.0321ecst |
0.736 |
|
| 2012 |
Grassman TJ, Carlin AM, Grandal J, Ratcliff C, Yang L, Mills MJ, Ringel SA. Spectrum-optimized Si-based III-V multijunction photovoltaics Proceedings of Spie - the International Society For Optical Engineering. 8256. DOI: 10.1117/12.909658 |
0.68 |
|
| 2012 |
Swaminathan K, Grassman TJ, Yang LM, Chmielewski D, Mills M, Ringel SA. Impact of threading dislocation density on metamorphic In xGa 1-xAs and In zGa 1-zP p-i-n photodetectors on GaAs Proceedings of Spie - the International Society For Optical Engineering. 8257. DOI: 10.1117/12.908581 |
0.592 |
|
| 2012 |
Grandal J, Grassman TJ, Carlin AM, Brenner MR, Galiana B, Carlin JA, Yang L, Mills MJ, Ringel SA. Growth and characterization of InGaAs quantum dots on metamorphic GaAsP templates by molecular beam epitaxy Conference Record of the Ieee Photovoltaic Specialists Conference. 1783-1787. DOI: 10.1109/PVSC.2012.6317939 |
0.672 |
|
| 2012 |
Carlin AM, Grassman TJ, Brenner MR, Grandal J, Ratcliff C, Yang L, Mills M, Sharma P, Fitzgerald EA, Ringel SA. Lattice-matched GaP/SiGe virtual substrates for low-dislocation density GaInP/GaAsP/Si solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 918-921. DOI: 10.1109/PVSC.2012.6317752 |
0.604 |
|
| 2012 |
Sasikumar A, Arehart A, Kolluri S, Wong MH, Keller S, Denbaars SP, Speck JS, Mishra UK, Ringel SA. Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs Ieee Electron Device Letters. 33: 658-660. DOI: 10.1109/Led.2012.2188710 |
0.645 |
|
| 2012 |
Sasikumar A, Arehart A, Ringel SA, Kaun S, Wong MH, Mishra UK, Speck JS. Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs Ieee International Reliability Physics Symposium Proceedings. 2C.3.1-2C.3.6. DOI: 10.1109/IRPS.2012.6241780 |
0.318 |
|
| 2012 |
Gür E, Tabares G, Arehart A, Chauveau JM, Hierro A, Ringel SA. Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy Journal of Applied Physics. 112. DOI: 10.1063/1.4769874 |
0.766 |
|
| 2012 |
Zhang Z, Hurni CA, Arehart AR, Speck JS, Ringel SA. Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4759037 |
0.667 |
|
| 2012 |
Cardwell DW, Arehart AR, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA, Pelz JP. Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 100. DOI: 10.1063/1.4714536 |
0.666 |
|
| 2012 |
Zhang Z, Hurni CA, Arehart AR, Yang J, Myers RC, Speck JS, Ringel SA. Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 100. DOI: 10.1063/1.3682528 |
0.684 |
|
| 2011 |
Swaminathan K, Yang LM, Grassman TJ, Tabares G, Guzman A, Hierro A, Mills MJ, Ringel SA. Metamorphic In(0.20)Ga(0.80)As p-i-n photodetectors grown on GaAs substrates for near infrared applications. Optics Express. 19: 7280-8. PMID 21503039 DOI: 10.1364/Oe.19.007280 |
0.75 |
|
| 2011 |
Swaminathan K, Yang LM, Grassman TJ, Tabares G, Guzman A, Hierro A, Mills MJ, Ringel SA. Metamorphic In020Ga0. 80As p-i-n photodetectors grown on GaAs substrates for near infrared applications Optics Express. 19: 7280-7288. DOI: 10.1364/OE.19.007280 |
0.687 |
|
| 2011 |
Nath DN, Gür E, Ringel SA, Rajan S. Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar Inx Ga1-x N Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3562277 |
0.332 |
|
| 2011 |
Grassman TJ, Carlin AM, Swaminathan K, Ratcliff C, Grandal J, Yang L, Mills MJ, Ringel SA. Expanding the palette: Metamorphic strategies over multiple lattice constant ranges for extending the spectrum of accessible photovoltaic materials Conference Record of the Ieee Photovoltaic Specialists Conference. 003375-003380. DOI: 10.1109/PVSC.2011.6186671 |
0.626 |
|
| 2011 |
Gür E, Zhang Z, Krishnamoorthy S, Rajan S, Ringel SA. Publisher’s Note: “Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies” [Appl. Phys. Lett. 99, 092109 (2011)] Applied Physics Letters. 99: 229906. DOI: 10.1063/1.3666222 |
0.354 |
|
| 2011 |
Ratcliff C, Grassman TJ, Carlin JA, Ringel SA. High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition Applied Physics Letters. 99. DOI: 10.1063/1.3644956 |
0.674 |
|
| 2011 |
Swaminathan K, Grassman TJ, Yang LM, Gu Q, Mills MJ, Ringel SA. Optically-aligned visible/near-infrared dual-band photodetector materials and devices on GaAs using metamorphic epitaxy Journal of Applied Physics. 110. DOI: 10.1063/1.3642981 |
0.646 |
|
| 2011 |
Gür E, Zhang Z, Krishnamoorty S, Rajan S, Ringel SA. Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies Applied Physics Letters. 99. DOI: 10.1063/1.3631678 |
0.478 |
|
| 2011 |
Arehart AR, Allerman AA, Ringel SA. Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes Journal of Applied Physics. 109. DOI: 10.1063/1.3592284 |
0.699 |
|
| 2011 |
González M, Carlin AM, Dohrman CL, Fitzgerald EA, Ringel SA. Determination of bandgap states in p-type In 0.49Ga 0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy Journal of Applied Physics. 109. DOI: 10.1063/1.3559739 |
0.678 |
|
| 2011 |
Yang L, Swaminathan K, Grassman T, Ringel S, Mills M. Threading Dislocations in Metamorphic In0.20Ga0.80As Grown on GaAs Substrates Microscopy and Microanalysis. 17: 1652-1653. DOI: 10.1017/S1431927611009135 |
0.582 |
|
| 2011 |
Tan KH, Wicaksono S, Loke WK, Li D, Yoon SF, Fitzgerald EA, Ringel SA, Harris JS. Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell Journal of Crystal Growth. 335: 66-69. DOI: 10.1016/J.Jcrysgro.2011.09.023 |
0.426 |
|
| 2011 |
Arehart AR, Malonis AC, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA. Next generation defect characterization in nitride HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2242-2244. DOI: 10.1002/Pssc.201000955 |
0.684 |
|
| 2010 |
Yang CK, Roblin P, Groote FD, Ringel SA, Rajan S, Teyssier JP, Poblenz C, Pei Y, Speck J, Mishra UK. Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer Ieee Transactions On Microwave Theory and Techniques. 58: 1077-1088. DOI: 10.1109/Tmtt.2010.2045452 |
0.348 |
|
| 2010 |
Grassman TJ, Brenner MR, Gonzalez M, Carlin AM, Unocic RR, Dehoff RR, Mills MJ, Ringel SA. Characterization of metamorphic GaAsP/Si materials and devices for photovoltaic applications Ieee Transactions On Electron Devices. 57: 3361-3369. DOI: 10.1109/Ted.2010.2082310 |
0.705 |
|
| 2010 |
Warner JH, Maximenko SI, Messenger SR, Walters RJ, Ringel SA, Brenner MR, Carlin AM. Electrical characterization of electron and proton-induced defects in p+n GaAs photodiodes: EBIC study Conference Record of the Ieee Photovoltaic Specialists Conference. 2646-2650. DOI: 10.1109/PVSC.2010.5617203 |
0.564 |
|
| 2010 |
Grassman TJ, Carlin AM, Ringel SA. Metamorphic gaasp and ingap photovoltaic materials on Si for high-efficiency III-V/Si multijunction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2029-2033. DOI: 10.1109/PVSC.2010.5616938 |
0.595 |
|
| 2010 |
Arehart AR, Brenner MR, Zhang Z, Swaminathan K, Ringel SA. Traps in AlGaInP materials and devices lattice matched to GaAs for multi-junction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1999-2001. DOI: 10.1109/PVSC.2010.5616430 |
0.749 |
|
| 2010 |
Arehart AR, Sasikumar A, Via GD, Winningham B, Poling B, Heller E, Ringel SA. Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2010.5703396 |
0.627 |
|
| 2010 |
Nath DN, Gür E, Ringel SA, Rajan S. Molecular beam epitaxy of N-polar InGaN Applied Physics Letters. 97. DOI: 10.1063/1.3478226 |
0.347 |
|
| 2010 |
Arehart AR, Homan T, Wong MH, Poblenz C, Speck JS, Ringel SA. Impact of N- and Ga-face polarity on the incorporation of deep levels in n -type GaN grown by molecular beam epitaxy Applied Physics Letters. 96. DOI: 10.1063/1.3453660 |
0.684 |
|
| 2010 |
Arehart AR, Poblenz C, Speck JS, Ringel SA. Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy Journal of Applied Physics. 107. DOI: 10.1063/1.3309778 |
0.664 |
|
| 2009 |
Grassman TJ, Brenner MR, Carlin AM, Rajagopalan S, Unocic R, Dehoff R, Mills M, Fraser H, Ringel SA. Toward metamorphic multijunction GaAsP/Si photovoltaics grown on optimized GaP/Si virtual substrates using anion-graded GaAsyP1-y buffers Conference Record of the Ieee Photovoltaic Specialists Conference. 002016-002021. DOI: 10.1109/PVSC.2009.5411489 |
0.594 |
|
| 2009 |
Grassman TJ, Brenner MR, Rajagopalan S, Unocic R, Dehoff R, Mills M, Fraser H, Ringel SA. Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy Applied Physics Letters. 94. DOI: 10.1063/1.3154548 |
0.463 |
|
| 2009 |
Hudait MK, Lin Y, Ringel SA. Strain relaxation properties of InAs yP 1-y metamorphic materials grown on InP substrates Journal of Applied Physics. 105. DOI: 10.1063/1.3098232 |
0.426 |
|
| 2009 |
Hudait MK, Brenner M, Ringel SA. Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1-y buffers by molecular beam epitaxy Solid-State Electronics. 53: 102-106. DOI: 10.1016/J.Sse.2008.10.007 |
0.43 |
|
| 2008 |
Smith PE, Lueck M, Ringel SA, Brillson LJ. Atomic diffusion and interface electronic structure at In 0.49Ga0.51P/GaAs heterojunctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 89-95. DOI: 10.1116/1.2823031 |
0.446 |
|
| 2008 |
Wilt DM, Pal AT, Ringel SA, Fitzgerald EA, Jenkins PP, Walters R. Final results from the MISSE5 GaAs on Si solar cell experiment Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922860 |
0.366 |
|
| 2008 |
Arehart AR, Corrion A, Poblenz C, Speck JS, Mishra UK, Ringel SA. Deep level optical and thermal spectroscopy of traps in n -GaN grown by ammonia molecular beam epitaxy Applied Physics Letters. 93. DOI: 10.1063/1.2981571 |
0.701 |
|
| 2008 |
Lin Y, Arehart AR, Carlin AM, Ringel SA. Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis Applied Physics Letters. 93. DOI: 10.1063/1.2970045 |
0.767 |
|
| 2008 |
Armstrong A, Caudill J, Corrion A, Poblenz C, Mishra UK, Speck JS, Ringel SA. Characterization of majority and minority carrier deep levels in p -type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy Journal of Applied Physics. 103. DOI: 10.1063/1.2891673 |
0.453 |
|
| 2008 |
Arehart AR, Corrion A, Poblenz C, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1750-1752. DOI: 10.1002/Pssc.200778622 |
0.694 |
|
| 2007 |
Smith PE, Lueck M, Ringel SA, Brillson LJ. Atomic diffusion and electronic structure in Al0.52 In0.48 PGaAs heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1916-1921. DOI: 10.1116/1.2811705 |
0.401 |
|
| 2007 |
Mosbacker HL, El Hage S, Gonzalez M, Ringel SA, Hetzer M, Look DC, Cantwell G, Zhang J, Song JJ, Brillson LJ. Role of subsurface defects in metal- ZnO (000 1-) Schottky barrier formation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1405-1411. DOI: 10.1116/1.2756543 |
0.382 |
|
| 2007 |
Wilt DM, Ringel SA, Fitzgerald EA, Jenkins PP, Walters R. Preliminary on-orbit performance data from GaAs on Si solar cells aboard MISSE5 Conference Record of the 2006 Ieee 4th World Conference On Photovoltaic Energy Conversion, Wcpec-4. 2: 1915-1918. DOI: 10.1109/WCPEC.2006.279871 |
0.343 |
|
| 2007 |
Armstrong A, Chakraborty A, Speck JS, DenBaars SP, Mishra UK, Ringel SA. Characterization and discrimination of AlGaN- and GaN-related deep levels in AlGaN/GaN heterostructures Aip Conference Proceedings. 893: 223-224. DOI: 10.1063/1.2729849 |
0.327 |
|
| 2007 |
Lin Y, Carlin JA, Arehart AR, Carlin AM, Ringel SA. High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy Applied Physics Letters. 90. DOI: 10.1063/1.2430403 |
0.814 |
|
| 2007 |
Armstrong A, Corrion A, Poblenz C, Mishra UK, Speck JS, Ringel SA. Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy (Physica Status Solidi (B) (2007) 244:6 (1867-1871)) Physica Status Solidi (B) Basic Research. 244: 4692. DOI: 10.1002/Pssb.200740116 |
0.319 |
|
| 2007 |
Armstrong A, Poblenz C, Mishra UK, Speck JS, Ringel SA. Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy Physica Status Solidi (B) Basic Research. 244: 1867-1871. DOI: 10.1002/Pssb.200674831 |
0.463 |
|
| 2006 |
Carlin JA, Andre CL, Kwon O, González M, Lueck MR, Fitzgerald EA, Wilt DM, Ringel SA. III-V device integration on silicon via metamorphic SiGe substrates Ecs Transactions. 3: 729-743. DOI: 10.1149/1.2355868 |
0.797 |
|
| 2006 |
Lueck MR, Andre CL, Pitera AJ, Lee ML, Fitzgerald EA, Ringel SA. Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage Ieee Electron Device Letters. 27: 142-144. DOI: 10.1109/Led.2006.870250 |
0.811 |
|
| 2006 |
Armstrong A, Chakraborty A, Speck JS, DenBaars SP, Mishra UK, Ringel SA. Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN/GaN heterostructures using capacitance deep level optical spectroscopy Applied Physics Letters. 89. DOI: 10.1063/1.2424670 |
0.478 |
|
| 2006 |
González M, Andre CL, Walters RJ, Messenger SR, Warner JH, Lorentzen JR, Pitera AJ, Fitzgerald EJ, Ringel SA. Erratum: “Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates” [J. Appl. Phys. 100, 034503 (2006)] Journal of Applied Physics. 100: 119901. DOI: 10.1063/1.2393007 |
0.788 |
|
| 2006 |
Gao M, Bradley ST, Cao Y, Jena D, Lin Y, Ringel SA, Hwang J, Schaff WJ, Brillson LJ. Compositional modulation and optical emission in AlGaN epitaxial films Journal of Applied Physics. 100. DOI: 10.1063/1.2382622 |
0.382 |
|
| 2006 |
Hudait MK, Lin Y, Sinha PM, Lindemuth JR, Ringel SA. Carrier compensation and scattering mechanisms in Si-doped InAs yP 1-y layers grown on InP substrates using intermediate InAs yP 1-y step-graded buffers Journal of Applied Physics. 100. DOI: 10.1063/1.2349358 |
0.423 |
|
| 2006 |
González M, Andre CL, Walters RJ, Messenger SR, Warner JH, Lorentzen JR, Pitera AJ, Fitzgerald EA, Ringel SA. Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates Journal of Applied Physics. 100. DOI: 10.1063/1.2220720 |
0.811 |
|
| 2006 |
Arehart AR, Moran B, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics Journal of Applied Physics. 100. DOI: 10.1063/1.2219985 |
0.69 |
|
| 2006 |
Kwon O, Boeckl JJ, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy Journal of Applied Physics. 100. DOI: 10.1063/1.2209068 |
0.765 |
|
| 2006 |
Armstrong A, Poblenz C, Green DS, Mishra UK, Speck JS, Ringel SA. Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy Applied Physics Letters. 88. DOI: 10.1063/1.2179375 |
0.386 |
|
| 2006 |
Liu D, Hudait M, Lin Y, Kim H, Ringel SA, Lu W. In0.53Ga0.47As/InAs0.3P0.7 composite channel high electron mobility transistors Electronics Letters. 42: 307-309. DOI: 10.1049/El:20063553 |
0.379 |
|
| 2006 |
Ringel SA, Kwon O, Lueck M, Boeckl J, Fitzgerald EA. III-V/Si device integration via metamorphic SiGe substrates Third International Sige Technology and Device Meeting, Istdm 2006 - Conference Digest. 2006. |
0.309 |
|
| 2006 |
Lee K, Vanmil B, Luo M, Myers TH, Armstrong A, Ringel SA, Rummukainen M, Saarinen K. Compensation in Be-doped gallium nitride grown using molecular beam epitaxy Materials Research Society Symposium Proceedings. 892: 729-734. |
0.327 |
|
| 2005 |
Tivarus C, Pelz JP, Hudait MK, Ringel SA. Direct measurement of quantum confinement effects at metal to quantum-well nanocontacts. Physical Review Letters. 94: 206803. PMID 16090268 DOI: 10.1103/Physrevlett.94.206803 |
0.337 |
|
| 2005 |
Ringel SA, Andre CL, Lueck M, Isaacson D, Pitera AJ, Fitzgerald EA, Wilt DM. III-V multi-junction materials and solar cells on engineered SiGe/Si substrates Materials Research Society Symposium Proceedings. 836: 211-222. DOI: 10.1557/Proc-836-L6.2 |
0.817 |
|
| 2005 |
Armstrong A, Green D, Arehart AR, Mishra UK, Speck JS, Ringel SA. Carbon-related deep states in compensated n-type and semi-insulating GaN:C and their influence on yellow luminescence Materials Research Society Symposium Proceedings. 831: 311-316. DOI: 10.1557/Proc-831-E5.7 |
0.683 |
|
| 2005 |
Smith PE, Goss SH, Gao M, Hudait MK, Lin Y, Ringel SA, Brillson LJ. Atomic diffusion and band lineups at In0.53Ga0.47As -on-InP heterointerfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1832-1837. DOI: 10.1116/1.1949218 |
0.4 |
|
| 2005 |
Andre CL, Carlin JA, Boeckl JJ, Wilt DM, Smith MA, Pitera AJ, Lee ML, Fitzgerald EA, Ringel SA. Investigations of high-performance GaAs solar cells grown on Ge-Si1-xGex-Si substrates Ieee Transactions On Electron Devices. 52: 1055-1060. DOI: 10.1109/Ted.2005.848117 |
0.825 |
|
| 2005 |
Gao M, Lin Y, Bradley ST, Ringel SA, Hwang J, Schaff WJ, Brillson LJ. Spontaneous compositional superlattice and band-gap reduction in Si-doped Al xGa 1-xN epilayers Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2126127 |
0.404 |
|
| 2005 |
Tivarus C, Pelz JP, Hudait MK, Ringel SA. Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2120899 |
0.341 |
|
| 2005 |
Tivarus C, Park KB, Hudait MK, Ringel SA, Pelz JP. Nanoscale characterization of metal/semiconductor nanocontacts Aip Conference Proceedings. 788: 280-284. DOI: 10.1063/1.2062977 |
0.345 |
|
| 2005 |
Armstrong A, Arehart AR, Green D, Mishra UK, Speck JS, Ringel SA. Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon Journal of Applied Physics. 98. DOI: 10.1063/1.2005379 |
0.711 |
|
| 2005 |
Hudait MK, Lin Y, Goss SH, Smith P, Bradley S, Brillson LJ, Johnston SW, Ahrenkiel RK, Ringel SA. Evidence of interface-induced persistent photoconductivity in InP/In 0.53Ga 0.47As/InP double heterostructures grown by molecular-beam epitaxy Applied Physics Letters. 87. DOI: 10.1063/1.1994948 |
0.391 |
|
| 2005 |
Andre CL, Wilt DM, Pitera AJ, Lee ML, Fitzgerald EA, Ringel SA. Impact of dislocation densities on n +/p and p +/n junction GaAs diodes and solar cells on SiGe virtual substrates Journal of Applied Physics. 98. DOI: 10.1063/1.1946194 |
0.801 |
|
| 2005 |
Lin Y, Hudait MK, Johnston SW, Ahrenkiel RK, Ringel SA. Photoconductivity decay in metamorphic InAsPInGaAs double heterostructures grown on in Asy P1-y compositionally step-graded buffers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1866645 |
0.471 |
|
| 2005 |
Armstrong A, Arehart AR, Ringel SA. A method to determine deep level profiles in highly compensated, wide band gap semiconductors Journal of Applied Physics. 97. DOI: 10.1063/1.1862321 |
0.691 |
|
| 2005 |
Kwon O, Boeckl J, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge/SiGe/Si substrates Journal of Applied Physics. 97. DOI: 10.1063/1.1835539 |
0.794 |
|
| 2005 |
Kwon O, Lin Y, Boeckl J, Ringel SA. Growth and properties of digitally-alloyed AlGaInP by solid source molecular beam epitaxy Journal of Electronic Materials. 34: 1301-1306. DOI: 10.1007/S11664-005-0253-8 |
0.564 |
|
| 2005 |
Armstrong A, Arehart A, Green D, Speck JS, Mishra UK, Ringel SA. A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si Physica Status Solidi C: Conferences. 2: 2411-2414. DOI: 10.1002/Pssc.200461594 |
0.697 |
|
| 2005 |
Ringel SA, Andre CL, Fitzgerald EA, Pitera AJ, Wilt DM. Multi-junction III-V photovoltaics on lattice-engineered Si sustrates Conference Record of the Ieee Photovoltaic Specialists Conference. 567-570. |
0.8 |
|
| 2005 |
Lueck M, González M, Kwon O, Andre C, Ringel SA. Impact of annealing and V:III ratio on properties of MBE grown wide-bandgap AIGaInP materials and solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 711-714. |
0.365 |
|
| 2004 |
Smith PE, Goss SH, Bradley ST, Hudait MK, Lin Y, Ringel SA, Brillson LJ. Atomic layer diffusion and electronic structure at In 0.53Ga 0.47As/InP interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 554-559. DOI: 10.1116/1.1651112 |
0.428 |
|
| 2004 |
Andre CL, Boeckl JJ, Wilt DM, Pitera AJ, Lee ML, Fitzgerald EA, Keyes BM, Ringel SA. Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates Applied Physics Letters. 84: 3447-3449. DOI: 10.1063/1.1736318 |
0.818 |
|
| 2004 |
Hudait MK, Lin Y, Palmisiano MN, Tivarus C, Pelz JP, Ringel SA. Comparison of mixed anion, InAs yP 1-y and mixed cation, In xAl 1-xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates Journal of Applied Physics. 95: 3952-3960. DOI: 10.1063/1.1667006 |
0.394 |
|
| 2004 |
Armstrong A, Arehart AR, Moran B, DenBaars SP, Mishra UK, Speck JS, Ringel SA. Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 84: 374-376. DOI: 10.1063/1.1643540 |
0.667 |
|
| 2003 |
Kwon O, Boeckl J, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Growth and properties of AlGaInP resonant cavity light emitting diodes (RCLEDs) on Ge/SiGe/Si substrates Materials Research Society Symposium - Proceedings. 799: 161-166. DOI: 10.1557/Proc-799-Z3.4 |
0.774 |
|
| 2003 |
Arehart AR, Poblenz C, Heying B, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y9.8 |
0.648 |
|
| 2003 |
Armstrong A, Arehart AR, Ringel SA, Moran B, DenBaars SP, Mishra UK, Speck JS. Identification of Carbon-related Bandgap States in GaN Grown by MOCVD Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y5.38 |
0.702 |
|
| 2003 |
Kwon O, Jazwiecki MM, Sacks RN, Ringel SA. High-Performance, Metamorphic InxGa1-xAs Tunnel Diodes Grown by Molecular Beam Epitaxy Ieee Electron Device Letters. 24: 613-615. DOI: 10.1109/Led.2003.817380 |
0.624 |
|
| 2003 |
Hudait MK, Lin Y, Palmisiano MN, Ringel SA. 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices grown on InAsyP1-y step-graded buffers by molecular beam epitaxy Ieee Electron Device Letters. 24: 538-540. DOI: 10.1109/Led.2003.816591 |
0.434 |
|
| 2003 |
Armstrong A, Arehart AR, Moran B, DenBaars SP, Mishra UK, Speck JS, Ringel SA. Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 42-48. DOI: 10.1109/ISCSPC.2003.1354429 |
0.659 |
|
| 2003 |
Andre CL, Boeckl JJ, Leitz CW, Currie MT, Langdo TA, Fitzgerald EA, Ringel SA. Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates Journal of Applied Physics. 94: 4980-4985. DOI: 10.1063/1.1610243 |
0.822 |
|
| 2003 |
Hudait MK, Lin Y, Wilt DM, Speck JS, Tivarus CA, Heller ER, Pelz JP, Ringel SA. High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy Applied Physics Letters. 82: 3212-3214. DOI: 10.1063/1.1572476 |
0.37 |
|
| 2003 |
Armstrong A, Arehart AR, Ringel SA, Moran B, DenBaars SP, Mishra UK, Speck JS. Identification of carbon-related bandgap states in GaN grown by MOCVD Materials Research Society Symposium - Proceedings. 798: 509-514. |
0.674 |
|
| 2003 |
Arehart AR, Poblenz C, Heying B, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Influence of growth parameters on the deep level spectrum in MBE-grown n-GaN Materials Research Society Symposium - Proceedings. 798: 735-740. |
0.649 |
|
| 2003 |
Fitzgerald EA, Groenert ME, Pitera A, Lee ML, Yang V, Carlin JA, Leitz CW, Andre CL, Ringel SA. The science and applications of relaxed semiconductor alloys on conventional substrates Proceedings of the 3rd World Conference On Photovoltaic Energy Conversion. 587-592. |
0.834 |
|
| 2002 |
Hudait MK, Lin Y, Andre CL, Sinha PM, Tivarus CA, Pelz JP, Wilt DM, Ringel SA. Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE Materials Research Society Symposium - Proceedings. 722: 287-292. DOI: 10.1557/Proc-722-K10.2 |
0.797 |
|
| 2002 |
Hudait MK, Andre CL, Kwon O, Palmisiano MN, Ringel SA. High-performance In0.53Ga0.47As thermophotovoltaic devices grown by solid source molecular beam epitaxy Ieee Electron Device Letters. 23: 697-699. DOI: 10.1109/Led.2002.806295 |
0.815 |
|
| 2002 |
Kaplar RJ, Ringel SA, Kurtz SR, Klem JF, Allerman AA. Deep-level defects in InGaAsN grown by molecular-beam epitaxy Applied Physics Letters. 80: 4777-4779. DOI: 10.1063/1.1483912 |
0.731 |
|
| 2002 |
Hierro A, Arehart AR, Heying B, Hansen M, Mishra UK, Denbaars SP, Speck JS, Ringel SA. Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 80: 805-807. DOI: 10.1063/1.1445274 |
0.772 |
|
| 2002 |
Ringel SA, Carlin JA, Andre CL, Hudait MK, Gonzalez M, Wilt DM, Clark EB, Jenkins P, Scheiman D, Allerman A, Fitzgerald EA, Leitz CW. Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers Progress in Photovoltaics: Research and Applications. 10: 417-426. DOI: 10.1002/Pip.448 |
0.828 |
|
| 2002 |
Kaplar RJ, Ringel SA, Kurtz SR, Allerman AA, Klem JF. Comparison of deep level spectra of MBE- and MOCVD-grown InGaAsN Materials Research Society Symposium - Proceedings. 719: 403-408. |
0.713 |
|
| 2001 |
Kaplar RJ, Arehart AR, Ringel SA, Allerman AA, Sieg RM, Kurtz SR. Deep levels and their impact on generation current in Sn-doped InGaAsN Journal of Applied Physics. 90: 3405-3408. DOI: 10.1063/1.1396832 |
0.801 |
|
| 2001 |
Kaplar RJ, Kwon D, Ringel SA, Allerman AA, Kurtz SR, Jones ED, Sieg RM. Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III-V solar cells Solar Energy Materials and Solar Cells. 69: 85-91. DOI: 10.1016/S0927-0248(00)00380-9 |
0.708 |
|
| 2001 |
Carlin JA, Ringel SA, Fitzgerald A, Bulsara M. High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics Solar Energy Materials and Solar Cells. 66: 621-630. DOI: 10.1016/S0927-0248(00)00250-6 |
0.723 |
|
| 2001 |
Hierro A, Hansen M, Zhao L, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN Physica Status Solidi B-Basic Solid State Physics. 228: 937-946. DOI: 10.1002/1521-3951(200112)228:3<937::Aid-Pssb937>3.0.Co;2-T |
0.48 |
|
| 2001 |
Hierro A, Hansen M, Boeckl JJ, Zhao L, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Carrier trapping and recombination at point defects and dislocations in MOCVD n-GaN Physica Status Solidi (B) Basic Research. 228: 937-946. DOI: 10.1002/1521-3951(200112)228:3<937::AID-PSSB937>3.0.CO;2-T |
0.787 |
|
| 2001 |
Hierro A, Arehart AR, Heying B, Hansen M, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Capture Kinetics of Electron Traps in MBE‐Grown n‐GaN Physica Status Solidi B-Basic Solid State Physics. 228: 309-313. DOI: 10.1002/1521-3951(200111)228:1<309::Aid-Pssb309>3.0.Co;2-N |
0.693 |
|
| 2001 |
Hierro A, Arehart AR, Heying B, Hansen M, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Capture kinetics of electron traps in MBE-grown n-GaN Physica Status Solidi (B) Basic Research. 228: 309-313. DOI: 10.1002/1521-3951(200111)228:1<309::AID-PSSB309>3.0.CO;2-N |
0.768 |
|
| 2000 |
Hierro A, Kwon D, Ringel SA, Hansen M, Mishra UK, DenBaars SP, Speck JS. Deep levels in n-type Schottky and p+-n homojunction GaN diodes Mrs Internet Journal of Nitride Semiconductor Research. 5: 922-928. DOI: 10.1557/S1092578300005275 |
0.345 |
|
| 2000 |
Carlin JA, Hudait MK, Ringel SA, Wilt DM, Clark EB, Leitz CW, Currie M, Langdo T, Fitzgerald EA. High efficiency GaAs-on-Si solar cells with high Voc using graded GeSi buffers Conference Record of the Ieee Photovoltaic Specialists Conference. 2000: 1006-1011. DOI: 10.1109/PVSC.2000.916056 |
0.687 |
|
| 2000 |
Hierro A, Kwon D, Ringel SA, Rubini S, Pelucchi E, Franciosi A. Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beam epitaxy Journal of Applied Physics. 87: 730-738. DOI: 10.1063/1.371933 |
0.684 |
|
| 2000 |
Hierro A, Ringel SA, Hansen M, Speck JS, Mishra UK, DenBaars SP. Hydrogen passivation of deep levels in n–GaN Applied Physics Letters. 77: 1499-1501. DOI: 10.1063/1.1290042 |
0.629 |
|
| 2000 |
Hierro A, Kwon D, Ringel SA, Hansen M, Speck JS, Mishra UK, DenBaars SP. Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes Applied Physics Letters. 76: 3064-3066. DOI: 10.1063/1.126580 |
0.677 |
|
| 2000 |
Carlin JA, Ringel SA, Fitzgerald EA, Bulsara M, Keyes BM. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates Applied Physics Letters. 76: 1884-1886. DOI: 10.1063/1.126200 |
0.723 |
|
| 2000 |
Carlin JA, Ringel SA, Fitzgerald EA, Bulsara M. High quality GaAs growth by MBE on Si using GeSi buffers and prospects for space photovoltaics Progress in Photovoltaics: Research and Applications. 8: 323-332. DOI: 10.1002/1099-159X(200005/06)8:3<323::Aid-Pip322>3.0.Co;2-U |
0.701 |
|
| 2000 |
Hierro A, Ringel SA, Hansen M, Speck JS, Mishra UK, DenBaars SP. Hydrogen passivation of deep levels in n-GaN Applied Physics Letters. 77: 1499-1501. |
0.608 |
|
| 2000 |
Hierro A, Kwon D, Ringel SA, Hansen M, Mishra UK, Denbaars SP, Speck JS. Deep levels in n-type Schottky and p+-n homojunction GaN diodes Materials Research Society Symposium - Proceedings. 595. |
0.635 |
|
| 2000 |
Hierro A, Kwon D, Ringel SA, Hansen M, Mishra UK, DenBaars SP, Speck JS. Deep levels in n-type Schottky and p +-n homojunction GaN diodes Mrs Internet Journal of Nitride Semiconductor Research. 5. |
0.634 |
|
| 2000 |
Hierro A, Kwon D, Ringel SA, Hansen M, Speck JS, Mishra UK, DenBaars SP. Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes Applied Physics Letters. 76: 3064-3066. |
0.643 |
|
| 1999 |
Hierro A, Kwon D, Ringel SA, Hansen M, Mishra UK, Denbaars SP, Speck JS. Deep Levels in n-Type Schottky and p + -n Homojunction GaN Diodes Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W11.80 |
0.444 |
|
| 1999 |
Kwon D, Kaplar RJ, Boeckl JJ, Ringel SA, Allerman AA, Kurtz SR, Jones ED. Deep level defect studies in MOCVD-grown InxGa1-xAs1-yNy films lattice-matched to GaAs Materials Research Society Symposium - Proceedings. 535: 59-64. DOI: 10.1557/Proc-535-59 |
0.816 |
|
| 1999 |
Sacks RN, Qin L, Jazwiecki M, Ringel SA, Clevenger MB, Wilt D, Goorsky MS. Growth and characterization of epitaxial Fe[sub x]Al[sub 1−x]/(In,Al)As/InP and III–V/Fe[sub x]Al[sub 1−x]/(In,Al)As/InP structures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1289. DOI: 10.1116/1.590742 |
0.357 |
|
| 1999 |
Xu Q, Hsu JWP, Carlin JA, Sieg RM, Boeckl JJ, Ringel SA. Topographic and electronic studies of wedge-shape surface defects on AiGaAs/GaAs films grown on ge substrates Applied Physics Letters. 75: 2111-2113. DOI: 10.1063/1.124933 |
0.784 |
|
| 1999 |
Hierro A, Kwon D, Goss SH, Brillson LJ, Ringel SA, Rubini S, Pelucchi E, Franciosi A. Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy Applied Physics Letters. 75: 832-834. DOI: 10.1063/1.124528 |
0.679 |
|
| 1999 |
Kwon D, Kaplar RJ, Ringel SA, Allerman AA, Kurtz SR, Jones ED. Deep levels in p-type InGaAsN lattice matched to GaAs Applied Physics Letters. 74: 2830-2832. DOI: 10.1063/1.124028 |
0.737 |
|
| 1998 |
Hierro A, Kwon D, Ringel SA, Brillson LJ, Young AP, Franciosi A. Deep Level Characterization of Interface-Engineered ZnSe Layers Grown by Molecular Beam Epitaxy on GaAs Mrs Proceedings. 535. DOI: 10.1557/Proc-535-77 |
0.482 |
|
| 1998 |
Carlin JA, Ringel SA, Sacks RN, Yap KS. Role of Al content on surface structure evolution of low temperature AlxGa1-xAs and its effect on critical thickness Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1372-1376. DOI: 10.1116/1.590078 |
0.657 |
|
| 1998 |
Sieg RM, Ringel SA, Ting SM, Samavedam SB, Currie M, Langdo T, Fitzgerald EA. Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1-xGex/Si substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1471-1474. DOI: 10.1116/1.589968 |
0.487 |
|
| 1998 |
Ringel SA, Chatterjee B. Electrical deactivation of interstitial Zn in heteroepitaxial InP by hydrogen and its effect on electronic properties Journal of Applied Physics. 83: 5904-5912. DOI: 10.1063/1.367453 |
0.462 |
|
| 1998 |
Sieg RM, Carlin JA, Boeckl JJ, Ringel SA, Currie MT, Ting SM, Langdo TA, Taraschi G, Fitzgerald EA, Keyes BM. High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates Applied Physics Letters. 73: 3111-3113. DOI: 10.1063/1.122689 |
0.821 |
|
| 1998 |
Ringel SA, Grillot PN. Chapter 6 Electronic Properties and Deep Levels in Germanium-Silicon Semiconductors and Semimetals. 56: 293-346. DOI: 10.1016/S0080-8784(08)62584-3 |
0.377 |
|
| 1998 |
Xu Q, Hsu JWP, Ting SM, Fitzgerald EA, Sieg RM, Ringel SA. Scanning force microscopy studies of GaAs films grown on offcut Ge substrates Journal of Electronic Materials. 27: 1010-1016. DOI: 10.1007/S11664-998-0154-8 |
0.393 |
|
| 1998 |
Sieg RM, Ringel SA, Ting SM, Fitzgerald EA, Sacks RN. Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion Journal of Electronic Materials. 27: 900-907. DOI: 10.1007/S11664-998-0116-1 |
0.451 |
|
| 1998 |
Ting SM, Fitzgerald EA, Sieg RM, Ringel SA. Range of defect morphologies on GaAs grown on offcut (001) Ge substrates Journal of Electronic Materials. 27: 451-461. |
0.323 |
|
| 1997 |
Hoffman RW, Fatemi NS, Weizer VG, Jenkins P, Stan MA, Ringel SA, Sieg RM, Scheiman DA, Wilt DM, Brinker DJ. The Effect of The Zn Interstitial Defect on the Performance of p/n InP Solar Cells Mrs Proceedings. 485. DOI: 10.1557/Proc-485-235 |
0.378 |
|
| 1997 |
Ringel SA, Grillot PN. Dislocation interactions and their impact on electrical properties of GeSi-based heterostructures Materials Research Society Symposium - Proceedings. 442: 313-324. DOI: 10.1557/Proc-442-313 |
0.463 |
|
| 1997 |
Ringel SA. Hydrogen-extended defect interactions in heteroepitaxial InP materials and devices Solid-State Electronics. 41: 359-380. DOI: 10.1016/S0038-1101(96)00144-X |
0.37 |
|
| 1997 |
Sieg RM, Sacks RN, Ringel SA. Application of pyrometric interferometry to the in situ monitoring of In0.52Al0.48As, In0.53Ga0.47As, and quaternary alloy growth on InP substrates Journal of Crystal Growth. 256-261. DOI: 10.1016/S0022-0248(96)00939-6 |
0.325 |
|
| 1997 |
Ringel SA, Chatterjee B, Hoffman RW. Hydrogen passivation of interstitial Zn defects in hetero-epitaxial InP cell structures and influence on device characteristics Progress in Photovoltaics: Research and Applications. 5: 423-431. DOI: 10.1002/(Sici)1099-159X(199711/12)5:6<423::Aid-Pip194>3.0.Co;2-T |
0.47 |
|
| 1997 |
Hoffman RW, Fatemi NS, Weizer VG, Jenkins PP, Stan MA, Ringel SA, Scheiman DA, Wilt DM, Brinker DJ. High beginning‐of‐life efficiency p/n InP solar cells Progress in Photovoltaics. 5: 415-422. DOI: 10.1002/(Sici)1099-159X(199711/12)5:6<415::Aid-Pip193>3.0.Co;2-R |
0.38 |
|
| 1997 |
Ringel SA, Sieg RM, Ting SM, Fitzgerald EA. Anti-phase domain-free GaAs on Ge substrates grown by molecular beam epitaxy for space solar cell applications Conference Record of the Ieee Photovoltaic Specialists Conference. 793-798. |
0.32 |
|
| 1996 |
Sacks RN, Sieg RM, Ringel SA. Investigation of the accuracy of pyrometric interferometry in determining AlxGa1-xAs growth rates and compositions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 2157-2162. DOI: 10.1116/1.588889 |
0.371 |
|
| 1996 |
Sieg RM, Sacks RN, Grillot PN, Ringel SA. Improved substrate temperature stability during molecular beam epitaxy growth using indium free mounting of small substrates of various shapes Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 3283-3287. DOI: 10.1116/1.580227 |
0.365 |
|
| 1996 |
Grillot PN, Ringel SA, Michel J, Fitzgerald EA. Structural, electronic, and luminescence investigation of strain-relaxation induced electrical conductivity type conversion in GeSi/Si heterostructures Journal of Applied Physics. 80: 2823-2832. DOI: 10.1063/1.363200 |
0.485 |
|
| 1996 |
Sieg RM, Ringel SA. Reabsorption, band-gap narrowing, and the reconciliation of photoluminescence spectra with electrical measurements for epitaxial n-InP Journal of Applied Physics. 80: 448-458. DOI: 10.1063/1.362746 |
0.412 |
|
| 1996 |
Chatterjee B, Ringel SA. Effect of extended defects on the formation and dissociation kinetics of Zn-H complexes in heteroepitaxial p-type InP layers Applied Physics Letters. 69: 839-841. DOI: 10.1063/1.117909 |
0.367 |
|
| 1996 |
Grillot PN, Ringel SA. Identification of compositionally invariant deep levels introduced by plastic strain in epitaxial Ge0.30Si0.70 and deformed bulk Si Applied Physics Letters. 69: 2110-2112. DOI: 10.1063/1.116896 |
0.47 |
|
| 1996 |
Grillot PN, Ringel SA, Fitzgerald EA. Effect of composition on deep levels in heteroepitaxial GexSi1−x layers and evidence for dominant intrinsic recombination-Generation in relaxed ge layers on Si Journal of Electronic Materials. 25: 1028-1036. DOI: 10.1007/Bf02659898 |
0.502 |
|
| 1996 |
Chatterjee B, Ringel SA, Hoffman R. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures Progress in Photovoltaics. 4: 91-100. DOI: 10.1002/(Sici)1099-159X(199603/04)4:2<91::Aid-Pip124>3.0.Co;2-E |
0.424 |
|
| 1996 |
Chatterjee B, Ringel SA, Hoffman R. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures Progress in Photovoltaics: Research and Applications. 4: 91-100. |
0.312 |
|
| 1996 |
Grillot PN, Ringel SA, Fitzgerald EA. Effect of composition on deep levels in heteroepitaxial GexSi1-x layers and evidence for dominant intrinsic recombination-generation in relaxed Ge layers on Si Journal of Electronic Materials. 25: 1028-1036. |
0.39 |
|
| 1995 |
Mena RA, Schacham SE, Haugland EJ, Alterovitz SA, Young PG, Bibyk SB, Ringel SA. Characterization of the transport properties of channel delta-doped structures by light-modulated Shubnikov-de Haas measurements Journal of Applied Physics. 78: 6626-6632. DOI: 10.1063/1.360484 |
0.335 |
|
| 1995 |
Grillot PN, Ringel SA, Fitzgerald EA, Watson GP, Xie YH. Minority- and majority-carrier trapping in strain-relaxed Ge 0.3Si0.7/Si heterostructure diodes grown by rapid thermal chemical-vapor deposition Journal of Applied Physics. 77: 676-685. DOI: 10.1063/1.359054 |
0.497 |
|
| 1995 |
Grillot PN, Ringel SA, Fitzgerald EA, Watson GP, Xie YH. Electron trapping kinetics at dislocations in relaxed Ge 0.3Si0.7/Si heterostructures Journal of Applied Physics. 77: 3248-3256. DOI: 10.1063/1.358678 |
0.475 |
|
| 1995 |
Chatterjee B, Ringel SA. Hydrogen passivation and its effects on carrier trapping by dislocations in InP/GaAs heterostructures Journal of Applied Physics. 77: 3885-3898. DOI: 10.1063/1.358567 |
0.396 |
|
| 1995 |
Sieg RM, Chatterjee B, Ringel SA. Evidence for enhanced zinc interstitial concentration in strain-relaxed heteroepitaxial indium phosphide Applied Physics Letters. 3108. DOI: 10.1063/1.113618 |
0.394 |
|
| 1994 |
Grillot PN, Ringel SA, Watson GP, Fitzgerald EA, Xie YH. Electronic characterization of dislocations in RTCVD germanium-silicon/silicon grown by graded layer epitaxy Materials Research Society Symposium Proceedings. 325: 159-164. DOI: 10.1557/Proc-325-159 |
0.494 |
|
| 1994 |
Chatterjee B, Ringel SA, Sieg R, Weinberg I, Hoffman R. Deep level characterization and passivation in heteroepitaxial InP Materials Research Society Symposium Proceedings. 325: 125-130. DOI: 10.1557/Proc-325-125 |
0.426 |
|
| 1994 |
Chatterjee B, Ringel SA, Sieg R, Hoffman R, Weinberg I. Hydrogen passivation of dislocations in InP on GaAs heterostructures Applied Physics Letters. 65: 58-60. DOI: 10.1063/1.113073 |
0.427 |
|
| 1994 |
Ringel SA, Chatterjee B, Sieg RM, Schnetzer EV, Hoffman R. Material quality and dislocation trapping in hydrogen passivated heteroepitaxial InP/GaAs and InP/Ge solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 2204-2207. |
0.324 |
|
| 1991 |
Ringel SA, Rohatgi A. The Effects of Trap-Induced Lifetime Variations on the Design and Performance of High-Efficiency GaAs Solar Cells Ieee Transactions On Electron Devices. 38: 2402-2409. DOI: 10.1109/16.97400 |
0.406 |
|
| 1991 |
Ringel SA, Smith AW, MacDougal MH, Rohatgi A. The effects of CdCl2 on the electronic properties of molecular-beam epitaxially grown CdTe/CdS heterojunction solar cells Journal of Applied Physics. 70: 881-889. DOI: 10.1063/1.349652 |
0.432 |
|
| 1991 |
Rohatgi A, Sudharsanan R, Ringel SA, MacDougal MH. Growth and process optimization of CdTe and CdZnTe polycrystalline films for high efficiency solar cells Solar Cells. 30: 109-122. DOI: 10.1016/0379-6787(91)90043-O |
0.408 |
|
| 1990 |
Ringel SA, Sudharsanan R, Rohatgi A, Owens MS, Giilis HP. Effects of annealing and surface preparation on the properties of poiycrystalline CdZnTe films grown by molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2012-2019. DOI: 10.1116/1.576798 |
0.353 |
|
| 1989 |
Ringel SA, Rohatgi A, Tobin SP. An Approach Toward 25-Percent Efficient GaAs Heteroface Solar Cells Ieee Transactions On Electron Devices. 36: 1230-1237. DOI: 10.1109/16.30927 |
0.385 |
|
| 1989 |
Rohatgi A, Ringel SA, Sudharsanan R, Meyers PV, Liu CH, Ramanathan V. Investigation of polycrystalline CdZnTe, CdMnTe, and CdTe films for photovoltaic applications Solar Cells. 27: 219-230. DOI: 10.1016/0379-6787(89)90030-6 |
0.393 |
|
| 1988 |
DeWald AB, Frost RL, Ringel SA, Schaffer JP, Rohatgi A, Nielsen B, Lynn KG. Positron annihilation spectroscopy of AlGaAs/GaAs interfaces in metalorganic chemical vapor deposition grown GaAs heterojunction solar cellsa) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2248-2252. DOI: 10.1116/1.575019 |
0.462 |
|
| 1988 |
Rohatgi A, Ringel SA, Welch J, Meeks E, Pollard K, Erbil A, Summers CJ, Meyers PV, Liu CH. Growth and characterization of CdMnTe and CdZnTe polycrystalline thin films for solar cells Solar Cells. 24: 185-194. DOI: 10.1016/0379-6787(88)90048-8 |
0.316 |
|
| 1988 |
Ringel SA, Rohatgi A. Material quality and design optimization for high efficiency GaAs solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1: 666-671. |
0.307 |
|
| 1987 |
Ringel SA, Ashok S. Silicon surface barrier modification by low-energy nitrogen ion implantation Journal of the Electrochemical Society. 134: 1494-1499. DOI: 10.1149/1.2100698 |
0.389 |
|
| 1986 |
Ringel SA, Chien HC, Ashok S. Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen Applied Physics Letters. 49: 728-730. DOI: 10.1063/1.97581 |
0.327 |
|
| 1986 |
Ashok S, Ringel S. Low-energy hydrogen implantation for silicon Schottky barrier modification Vacuum. 36: 917-920. DOI: 10.1016/0042-207X(86)90140-5 |
0.322 |
|
| Show low-probability matches. |