| Year |
Citation |
Score |
| 2020 |
Sun W, Jimenez JL, Arehart AR. Impact of Traps on the Adjacent Channel Power Ratios of GaN HEMTs Ieee Electron Device Letters. 41: 816-819. DOI: 10.1109/Led.2020.2986445 |
0.409 |
|
| 2020 |
Zhang Y, Chen Z, Li W, Lee H, Karim R, Arehart AR, Ringel SA, Rajan S, Zhao H. Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Journal of Applied Physics. 127: 215707. DOI: 10.1063/5.0008758 |
0.584 |
|
| 2020 |
Kalarickal NK, Xia Z, McGlone JF, Liu Y, Moore W, Arehart AR, Ringel SA, Rajan S. High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer Journal of Applied Physics. 127: 215706. DOI: 10.1063/5.0005531 |
0.606 |
|
| 2020 |
Ghadi H, McGlone JF, Jackson CM, Farzana E, Feng Z, Bhuiyan AFMAU, Zhao H, Arehart AR, Ringel SA. Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition Apl Materials. 8: 021111. DOI: 10.1063/1.5142313 |
0.638 |
|
| 2020 |
Ferguson AJ, Farshchi R, Paul PK, Dippo P, Bailey J, Poplavskyy D, Khanam A, Tuomisto F, Arehart AR, Kuciauskas D. Defect-mediated metastability and carrier lifetimes in polycrystalline (Ag,Cu)(In,Ga)Se2 absorber materials Journal of Applied Physics. 127: 215702. DOI: 10.1063/1.5134502 |
0.44 |
|
| 2020 |
Feng Z, Bhuiyan AFMAU, Xia Z, Moore W, Chen Z, McGlone JF, Daughton DR, Arehart AR, Ringel SA, Rajan S, Zhao H. Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga 2 O 3 Physica Status Solidi-Rapid Research Letters. 14: 2000145. DOI: 10.1002/Pssr.202000145 |
0.525 |
|
| 2019 |
Zhang Y, Xia Z, Mcglone J, Sun W, Joishi C, Arehart AR, Ringel SA, Rajan S. Evaluation of Low-Temperature Saturation Velocity in
$\beta$
-(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors Ieee Transactions On Electron Devices. 66: 1574-1578. DOI: 10.1109/Ted.2018.2889573 |
0.569 |
|
| 2019 |
Sun W, Joh J, Krishnan S, Pendharkar S, Jackson CM, Ringel SA, Arehart AR. Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs Ieee Transactions On Electron Devices. 66: 890-895. DOI: 10.1109/Ted.2018.2888840 |
0.658 |
|
| 2019 |
Joishi C, Zhang Y, Xia Z, Sun W, Arehart AR, Ringel S, Lodha S, Rajan S. Breakdown Characteristics of $\beta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors Ieee Electron Device Letters. 40: 1241-1244. DOI: 10.1109/Led.2019.2921116 |
0.562 |
|
| 2019 |
Xia Z, Xue H, Joishi C, Mcglone J, Kalarickal NK, Sohel SH, Brenner M, Arehart A, Ringel S, Lodha S, Lu W, Rajan S. $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Ieee Electron Device Letters. 40: 1052-1055. DOI: 10.1109/Led.2019.2920366 |
0.554 |
|
| 2019 |
Karki S, Paul P, Deitz JI, Poudel D, Rajan G, Belfore B, Danilov EO, Castellano FN, Grassman TJ, Arehart A, Rockett A, Marsillac S. Degradation Mechanism in Cu(In,Ga)Se2 Material and Solar Cells Due to Moisture and Heat Treatment of the Absorber Layer Ieee Journal of Photovoltaics. 9: 1138-1143. DOI: 10.1109/Jphotov.2019.2912707 |
0.422 |
|
| 2019 |
Karki S, Marsillac S, Paul P, Rajan G, Belfore B, Poudel D, Rockett A, Danilov E, Castellano F, Arehart A. Analysis of Recombination Mechanisms in RbF-Treated CIGS Solar Cells Ieee Journal of Photovoltaics. 9: 313-318. DOI: 10.1109/Jphotov.2018.2877596 |
0.429 |
|
| 2019 |
Johnson JM, Chen Z, Varley JB, Jackson CM, Farzana E, Zhang Z, Arehart AR, Huang H, Genc A, Ringel SA, Van de Walle CG, Muller DA, Hwang J. Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
β−Ga2O3 Physical Review X. 9. DOI: 10.1103/Physrevx.9.041027 |
0.588 |
|
| 2019 |
Xia Z, Chandrasekar H, Moore W, Wang C, Lee AJ, McGlone J, Kalarickal NK, Arehart A, Ringel S, Yang F, Rajan S. Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Applied Physics Letters. 115: 252104. DOI: 10.1063/1.5130669 |
0.593 |
|
| 2019 |
Farzana E, Mauze A, Varley JB, Blue TE, Speck JS, Arehart AR, Ringel SA. Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy Apl Materials. 7: 121102. DOI: 10.1063/1.5126463 |
0.636 |
|
| 2019 |
Kalarickal NK, Xia Z, McGlone J, Krishnamoorthy S, Moore W, Brenner M, Arehart AR, Ringel SA, Rajan S. Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 Applied Physics Letters. 115: 152106. DOI: 10.1063/1.5123149 |
0.574 |
|
| 2019 |
McGlone JF, Xia Z, Joishi C, Lodha S, Rajan S, Ringel S, Arehart AR. Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs Applied Physics Letters. 115: 153501. DOI: 10.1063/1.5118250 |
0.655 |
|
| 2019 |
Chandrasekar H, Cheng J, Wang T, Xia Z, Combs NG, Freeze CR, Marshall PB, McGlone J, Arehart A, Ringel S, Janotti A, Stemmer S, Lu W, Rajan S. Velocity saturation in La-doped BaSnO3 thin films Applied Physics Letters. 115: 92102. DOI: 10.1063/1.5097791 |
0.599 |
|
| 2019 |
Gleason DA, Galiano K, Brown JL, Hilton AM, Ringel SA, Arehart AR, Heller ER, Dorsey DL, Pelz JP. Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing Applied Physics Letters. 114: 053510. DOI: 10.1063/1.5079745 |
0.564 |
|
| 2019 |
Farzana E, Chaiken MF, Blue TE, Arehart AR, Ringel SA. Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3 Apl Materials. 7: 022502. DOI: 10.1063/1.5054606 |
0.635 |
|
| 2019 |
Deitz JI, Paul PK, Farshchi R, Poplavskyy D, Bailey J, Arehart AR, McComb DW, Grassman TJ. Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe2 Using Electron Energy‐Loss Spectroscopy in the Scanning Transmission Electron Microscope Advanced Energy Materials. 9: 1901612. DOI: 10.1002/Aenm.201901612 |
0.34 |
|
| 2018 |
Mcglone JF, Xia Z, Zhang Y, Joishi C, Lodha S, Rajan S, Ringel SA, Arehart AR. Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate Ieee Electron Device Letters. 39: 1042-1045. DOI: 10.1109/Led.2018.2843344 |
0.629 |
|
| 2018 |
Bajaj S, Allerman A, Armstrong A, Razzak T, Talesara V, Sun W, Sohel SH, Zhang Y, Lu W, Arehart AR, Akyol F, Rajan S. High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm Ieee Electron Device Letters. 39: 256-259. DOI: 10.1109/Led.2017.2780221 |
0.378 |
|
| 2018 |
Farzana E, Foronda HM, Jackson CM, Razzak T, Zhang Z, Speck JS, Arehart AR, Ringel SA. Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies Journal of Applied Physics. 124: 145703. DOI: 10.1063/1.5050949 |
0.648 |
|
| 2018 |
Joishi C, Xia Z, McGlone J, Zhang Y, Arehart AR, Ringel S, Lodha S, Rajan S. Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors Applied Physics Letters. 113: 123501. DOI: 10.1063/1.5039502 |
0.585 |
|
| 2018 |
Galiano K, Deitz JI, Carnevale SD, Gleason DA, Paul PK, Zhang Z, McSkimming BM, Speck JS, Ringel SA, Grassman TJ, Arehart AR, Pelz JP. Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride Journal of Applied Physics. 123: 224504. DOI: 10.1063/1.5022806 |
0.644 |
|
| 2018 |
Farzana E, Ahmadi E, Speck JS, Arehart AR, Ringel SA. Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy Journal of Applied Physics. 123: 161410. DOI: 10.1063/1.5010608 |
0.648 |
|
| 2018 |
Grassman TJ, Galiano K, Deitz JI, Carnevale SD, Gleason DA, Zhang Z, Ringel SA, Arehart AR, Pelz JP. Correlative Defect Characterization in Semiconductors via Electron Channeling Contrast Imaging and Scanning Deep Level Transient Spectroscopy Microscopy and Microanalysis. 24: 1056-1057. DOI: 10.1017/S1431927618005767 |
0.562 |
|
| 2018 |
Deitz JI, Paul PK, Karki S, Marsillac S, Arehart AR, Walls JM, Bowers JW, Grassman TJ, McComb DW. Characterization of Sub-Bandgap Energy States in CuInxGa(i-x)Se2 and Transparent Conducting Oxides with Electron Energy-Loss Spectroscopy Microscopy and Microanalysis. 24: 456-457. DOI: 10.1017/S1431927618002775 |
0.319 |
|
| 2018 |
Altermatt PP, Xiong Z, He Q, Deng W, Ye F, Yang Y, Chen Y, Feng Z, Verlinden PJ, Liu A, Macdonald DH, Luka T, Lausch D, Turek M, Hagendorf C, ... ... Arehart AR, et al. High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells Solar Energy. 175: 68-74. DOI: 10.1016/J.Solener.2018.01.073 |
0.566 |
|
| 2017 |
Jackson CM, Arehart AR, Grassman TJ, McSkimming B, Speck JS, Ringel SA. Impact of Surface Treatment on Interface States of ALD Al2O3/GaN Interfaces Ecs Journal of Solid State Science and Technology. 6: P489-P494. DOI: 10.1149/2.0041708Jss |
0.52 |
|
| 2017 |
Karki S, Paul PK, Rajan G, Ashrafee T, Aryal K, Pradhan P, Collins RW, Rockett A, Grassman TJ, Ringel SA, Arehart AR, Marsillac S. In Situ and Ex Situ Investigations of KF Postdeposition Treatment Effects on CIGS Solar Cells Ieee Journal of Photovoltaics. 7: 665-669. DOI: 10.1109/Jphotov.2016.2637659 |
0.603 |
|
| 2017 |
Lee CH, Krishnamoorthy S, Paul PK, O'Hara DJ, Brenner MR, Kawakami RK, Arehart AR, Rajan S. Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy Applied Physics Letters. 111: 202101. DOI: 10.1063/1.4994582 |
0.411 |
|
| 2017 |
Krishnamoorthy S, Xia Z, Joishi C, Zhang Y, McGlone J, Johnson J, Brenner M, Arehart AR, Hwang J, Lodha S, Rajan S. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor Applied Physics Letters. 111: 023502. DOI: 10.1063/1.4993569 |
0.4 |
|
| 2017 |
Farzana E, Zhang Z, Paul PK, Arehart AR, Ringel SA. Influence of metal choice on (010) β-Ga2O3Schottky diode properties Applied Physics Letters. 110: 202102. DOI: 10.1063/1.4983610 |
0.53 |
|
| 2016 |
Nguyen XS, Goh XL, Zhang L, Zhang Z, Arehart AR, Ringel SA, Fitzgerald EA, Chua SJ. Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.060306 |
0.643 |
|
| 2016 |
Chen J, Puzyrev YS, Zhang EX, Fleetwood DM, Schrimpf RD, Arehart AR, Ringel SA, Kaun SW, Kyle ECH, Speck JS, Saunier P, Lee C, Pantelides ST. High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 16: 282-289. DOI: 10.1109/Tdmr.2016.2581178 |
0.607 |
|
| 2016 |
Zhang Z, Cardwell D, Sasikumar A, Kyle ECH, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Arehart AR, Ringel SA. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures Journal of Applied Physics. 119. DOI: 10.1063/1.4948298 |
0.623 |
|
| 2016 |
Zhang Z, Farzana E, Arehart AR, Ringel SA. Erratum: “Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy” [Appl. Phys. Lett. 108, 052105 (2016)] Applied Physics Letters. 108: 079901. DOI: 10.1063/1.4942431 |
0.543 |
|
| 2016 |
Zhang Z, Farzana E, Arehart AR, Ringel SA. Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy Applied Physics Letters. 108. DOI: 10.1063/1.4941429 |
0.637 |
|
| 2016 |
Liu X, Jackson CM, Wu F, Mazumder B, Yeluri R, Kim J, Keller S, Arehart AR, Ringel SA, Speck JS, Mishra UK. Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition Journal of Applied Physics. 119. DOI: 10.1063/1.4939157 |
0.636 |
|
| 2016 |
Arehart AR, Sasikumar A, Via GD, Poling B, Heller ER, Ringel SA. Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN Microelectronics Reliability. 56: 45-48. DOI: 10.1016/J.Microrel.2015.11.007 |
0.652 |
|
| 2016 |
Sasikumar A, Arehart AR, Cardwell DW, Jackson CM, Sun W, Zhang Z, Ringel SA. Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs Microelectronics Reliability. 56: 37-44. DOI: 10.1016/J.Microrel.2015.10.026 |
0.641 |
|
| 2016 |
Nguyen XS, Hou HW, Mierry PD, Vennéguès P, Tendille F, Arehart AR, Ringel SA, Fitzgerald EA, Chua SJ. Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy Physica Status Solidi B-Basic Solid State Physics. 253: 2225-2229. DOI: 10.1002/Pssb.201600364 |
0.613 |
|
| 2015 |
Chen J, Puzyrev YS, Jiang R, Zhang EX, McCurdy MW, Fleetwood DM, Schrimpf RD, Pantelides ST, Arehart AR, Ringel SA, Saunier P, Lee C. Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs Ieee Transactions On Nuclear Science. 62: 2423-2430. DOI: 10.1109/Tns.2015.2488650 |
0.622 |
|
| 2015 |
Paul PK, Cardwell DW, Jackson CM, Galiano K, Aryal K, Pelz JP, Marsillac S, Ringel SA, Grassman TJ, Arehart AR. Direct nm-scale spatial mapping of traps in CIGS 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355656 |
0.516 |
|
| 2015 |
Paul PK, Cardwell DW, Jackson CM, Galiano K, Aryal K, Pelz JP, Marsillac S, Ringel SA, Grassman TJ, Arehart AR. Direct nm-Scale Spatial Mapping of Traps in CIGS Ieee Journal of Photovoltaics. 5: 1482-1486. DOI: 10.1109/JPHOTOV.2015.2459971 |
0.418 |
|
| 2015 |
Sasikumar A, Zhang Z, Kumar P, Zhang EX, Fleetwood DM, Schrimpf RD, Saunier P, Lee C, Ringel SA, Arehart AR. Proton irradiation-induced traps causing V<inf>T</inf> instabilities and RF degradation in GaN HEMTs Ieee International Reliability Physics Symposium Proceedings. 2015: 2E31-2E36. DOI: 10.1109/IRPS.2015.7112688 |
0.371 |
|
| 2015 |
Zhang Z, Farzana E, Sun WY, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, McSkimming B, Kyle ECH, Speck JS, Arehart AR, Ringel SA. Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN Journal of Applied Physics. 118. DOI: 10.1063/1.4933174 |
0.655 |
|
| 2015 |
Lee EW, Lee CH, Paul PK, Ma L, McCulloch WD, Krishnamoorthy S, Wu Y, Arehart AR, Rajan S. Layer-transferred MoS2/GaN PN diodes Applied Physics Letters. 107. DOI: 10.1063/1.4930234 |
0.434 |
|
| 2015 |
Nguyen XS, Lin K, Zhang Z, McSkimming B, Arehart AR, Speck JS, Ringel SA, Fitzgerald EA, Chua SJ. Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106, 102101 (2015)] Applied Physics Letters. 106: 159903. DOI: 10.1063/1.4918373 |
0.56 |
|
| 2015 |
Zhang Z, Arehart AR, Kyle ECH, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Ringel SA. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 106. DOI: 10.1063/1.4905783 |
0.65 |
|
| 2015 |
Sasikumar A, Arehart AR, Via GD, Winningham B, Poling B, Heller E, Ringel SA. Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps Microelectronics Reliability. 55: 2258-2262. DOI: 10.1016/J.Microrel.2015.07.048 |
0.635 |
|
| 2014 |
Sasikumar A, Arehart AR, Kaun SW, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Ringel SA. Defects in GaN based transistors Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2042020 |
0.643 |
|
| 2014 |
Sasikumar A, Cardwell DW, Arehart AR, Lu J, Kaun SW, Keller S, Mishra UK, Speck JS, Pelz JP, Ringel SA. Toward a physical understanding of the reliability-limiting E C-0.57 eV trap in GaN HEMTs Ieee International Reliability Physics Symposium Proceedings. 2C.1.1-2C.1.6. DOI: 10.1109/IRPS.2014.6860588 |
0.564 |
|
| 2014 |
Lee EW, Ma L, Nath DN, Lee CH, Arehart A, Wu Y, Rajan S. Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions Applied Physics Letters. 105: 203504. DOI: 10.1063/1.4901048 |
0.409 |
|
| 2014 |
Ma L, Nath DN, Lee EW, Lee CH, Yu M, Arehart A, Rajan S, Wu Y. Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1 Applied Physics Letters. 105: 72105. DOI: 10.1063/1.4893143 |
0.391 |
|
| 2014 |
Zhang Z, Jackson CM, Arehart AR, McSkimming B, Speck JS, Ringel SA. Direct determination of energy band alignments of Ni/Al2O 3/GaN MOS structures using internal photoemission spectroscopy Journal of Electronic Materials. 43: 828-832. DOI: 10.1007/S11664-013-2942-Z |
0.606 |
|
| 2013 |
Long RD, Jackson CM, Yang J, Hazeghi A, Hitzman C, Majety S, Arehart AR, Nishi Y, Ma TP, Ringel SA, McIntyre PC. Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen Applied Physics Letters. 103. DOI: 10.1063/1.4827102 |
0.584 |
|
| 2013 |
Zhang Z, Arehart AR, Cinkilic E, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, McSkimming B, Speck JS, Ringel SA. Impact of proton irradiation on deep level states in n-GaN Applied Physics Letters. 103. DOI: 10.1063/1.4816423 |
0.642 |
|
| 2013 |
Sasikumar A, Arehart AR, Martin-Horcajo S, Romero MF, Pei Y, Brown D, Recht F, Di Forte-Poisson MA, Calle F, Tadjer MJ, Keller S, Denbaars SP, Mishra UK, Ringel SA. Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters. 103. DOI: 10.1063/1.4813862 |
0.658 |
|
| 2013 |
Jackson CM, Arehart AR, Cinkilic E, McSkimming B, Speck JS, Ringel SA. Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies Journal of Applied Physics. 113. DOI: 10.1063/1.4808093 |
0.649 |
|
| 2013 |
Cardwell DW, Sasikumar A, Arehart AR, Kaun SW, Lu J, Keller S, Speck JS, Mishra UK, Ringel SA, Pelz JP. Spatially-resolved spectroscopic measurements of Ec - 0.57 eV traps in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4806980 |
0.647 |
|
| 2013 |
Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA. Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics. 80: 19-22. DOI: 10.1016/J.Sse.2012.09.010 |
0.654 |
|
| 2012 |
Sasikumar A, Arehart A, Kolluri S, Wong MH, Keller S, Denbaars SP, Speck JS, Mishra UK, Ringel SA. Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs Ieee Electron Device Letters. 33: 658-660. DOI: 10.1109/Led.2012.2188710 |
0.597 |
|
| 2012 |
Gür E, Tabares G, Arehart A, Chauveau JM, Hierro A, Ringel SA. Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy Journal of Applied Physics. 112. DOI: 10.1063/1.4769874 |
0.734 |
|
| 2012 |
Zhang Z, Hurni CA, Arehart AR, Speck JS, Ringel SA. Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4759037 |
0.611 |
|
| 2012 |
Cardwell DW, Arehart AR, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA, Pelz JP. Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 100. DOI: 10.1063/1.4714536 |
0.599 |
|
| 2012 |
Zhang Z, Hurni CA, Arehart AR, Yang J, Myers RC, Speck JS, Ringel SA. Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 100. DOI: 10.1063/1.3682528 |
0.629 |
|
| 2011 |
Arehart AR, Allerman AA, Ringel SA. Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes Journal of Applied Physics. 109. DOI: 10.1063/1.3592284 |
0.657 |
|
| 2011 |
Arehart AR, Malonis AC, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA. Next generation defect characterization in nitride HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2242-2244. DOI: 10.1002/Pssc.201000955 |
0.627 |
|
| 2010 |
Arehart AR, Brenner MR, Zhang Z, Swaminathan K, Ringel SA. Traps in AlGaInP materials and devices lattice matched to GaAs for multi-junction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1999-2001. DOI: 10.1109/PVSC.2010.5616430 |
0.703 |
|
| 2010 |
Arehart AR, Sasikumar A, Via GD, Winningham B, Poling B, Heller E, Ringel SA. Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2010.5703396 |
0.554 |
|
| 2010 |
Arehart AR, Homan T, Wong MH, Poblenz C, Speck JS, Ringel SA. Impact of N- and Ga-face polarity on the incorporation of deep levels in n -type GaN grown by molecular beam epitaxy Applied Physics Letters. 96. DOI: 10.1063/1.3453660 |
0.626 |
|
| 2010 |
Arehart AR, Poblenz C, Speck JS, Ringel SA. Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy Journal of Applied Physics. 107. DOI: 10.1063/1.3309778 |
0.603 |
|
| 2008 |
Arehart AR, Corrion A, Poblenz C, Speck JS, Mishra UK, Ringel SA. Deep level optical and thermal spectroscopy of traps in n -GaN grown by ammonia molecular beam epitaxy Applied Physics Letters. 93. DOI: 10.1063/1.2981571 |
0.653 |
|
| 2008 |
Lin Y, Arehart AR, Carlin AM, Ringel SA. Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis Applied Physics Letters. 93. DOI: 10.1063/1.2970045 |
0.722 |
|
| 2008 |
Arehart AR, Corrion A, Poblenz C, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1750-1752. DOI: 10.1002/Pssc.200778622 |
0.63 |
|
| 2007 |
Lin Y, Carlin JA, Arehart AR, Carlin AM, Ringel SA. High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy Applied Physics Letters. 90. DOI: 10.1063/1.2430403 |
0.773 |
|
| 2006 |
Arehart AR, Moran B, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics Journal of Applied Physics. 100. DOI: 10.1063/1.2219985 |
0.611 |
|
| 2005 |
Armstrong A, Green D, Arehart AR, Mishra UK, Speck JS, Ringel SA. Carbon-related deep states in compensated n-type and semi-insulating GaN:C and their influence on yellow luminescence Materials Research Society Symposium Proceedings. 831: 311-316. DOI: 10.1557/Proc-831-E5.7 |
0.619 |
|
| 2005 |
Armstrong A, Arehart AR, Green D, Mishra UK, Speck JS, Ringel SA. Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon Journal of Applied Physics. 98. DOI: 10.1063/1.2005379 |
0.652 |
|
| 2005 |
Armstrong A, Arehart AR, Ringel SA. A method to determine deep level profiles in highly compensated, wide band gap semiconductors Journal of Applied Physics. 97. DOI: 10.1063/1.1862321 |
0.632 |
|
| 2005 |
Armstrong A, Arehart A, Green D, Speck JS, Mishra UK, Ringel SA. A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si Physica Status Solidi C: Conferences. 2: 2411-2414. DOI: 10.1002/Pssc.200461594 |
0.627 |
|
| 2004 |
Armstrong A, Arehart AR, Moran B, DenBaars SP, Mishra UK, Speck JS, Ringel SA. Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 84: 374-376. DOI: 10.1063/1.1643540 |
0.595 |
|
| 2003 |
Arehart AR, Poblenz C, Heying B, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y9.8 |
0.562 |
|
| 2003 |
Armstrong A, Arehart AR, Ringel SA, Moran B, DenBaars SP, Mishra UK, Speck JS. Identification of Carbon-related Bandgap States in GaN Grown by MOCVD Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y5.38 |
0.643 |
|
| 2003 |
Armstrong A, Arehart AR, Moran B, DenBaars SP, Mishra UK, Speck JS, Ringel SA. Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 42-48. DOI: 10.1109/ISCSPC.2003.1354429 |
0.579 |
|
| 2003 |
Armstrong A, Arehart AR, Ringel SA, Moran B, DenBaars SP, Mishra UK, Speck JS. Identification of carbon-related bandgap states in GaN grown by MOCVD Materials Research Society Symposium - Proceedings. 798: 509-514. |
0.602 |
|
| 2003 |
Arehart AR, Poblenz C, Heying B, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Influence of growth parameters on the deep level spectrum in MBE-grown n-GaN Materials Research Society Symposium - Proceedings. 798: 735-740. |
0.575 |
|
| 2002 |
Hierro A, Arehart AR, Heying B, Hansen M, Mishra UK, Denbaars SP, Speck JS, Ringel SA. Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 80: 805-807. DOI: 10.1063/1.1445274 |
0.738 |
|
| 2001 |
Kaplar RJ, Arehart AR, Ringel SA, Allerman AA, Sieg RM, Kurtz SR. Deep levels and their impact on generation current in Sn-doped InGaAsN Journal of Applied Physics. 90: 3405-3408. DOI: 10.1063/1.1396832 |
0.775 |
|
| 2001 |
Hierro A, Arehart AR, Heying B, Hansen M, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Capture Kinetics of Electron Traps in MBE‐Grown n‐GaN Physica Status Solidi B-Basic Solid State Physics. 228: 309-313. DOI: 10.1002/1521-3951(200111)228:1<309::Aid-Pssb309>3.0.Co;2-N |
0.647 |
|
| 2001 |
Hierro A, Arehart AR, Heying B, Hansen M, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Capture kinetics of electron traps in MBE-grown n-GaN Physica Status Solidi (B) Basic Research. 228: 309-313. DOI: 10.1002/1521-3951(200111)228:1<309::AID-PSSB309>3.0.CO;2-N |
0.736 |
|
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