Zhonghai Shi, Ph.D. - Publications
Affiliations: | 2002 | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
---|---|---|---|---|---|
2004 | Shi Z, Onsongo D, Rai R, Samavedam SB, Banerjee SK. Hole mobility enhancement and Si cap optimization in nanoscale strained Si1-xGex PMOSFETs Solid-State Electronics. 48: 2299-2306. DOI: 10.1016/J.Sse.2004.04.016 | 0.716 | |||
2004 | Quinones E, Onsongo D, Shi Z, Banerjee SK. Evaluation of heterojunction MOSFETs using UHVCVD deposited tensile-strained Si |
0.694 | |||
2003 | Shi Z, Onsongo D, Onishi K, Lee JC, Banerjee SK. Mobility enhancement in surface channel SiGe PMOSFETs with HfO 2 gate dielectrics Ieee Electron Device Letters. 24: 34-36. DOI: 10.1109/Led.2002.807020 | 0.709 | |||
2003 | Chen X, Shi Z, Banerjee SK, Zhou JP, Rabenberg LK. High-resolution transmission electron microscopy of silicide formation and morphology development of Ni/Si and Ni/Si1-xGex Journal of Electronic Materials. 32: 1171-1181. DOI: 10.1007/S11664-003-0008-3 | 0.608 | |||
2000 | Shi Z, Chen X, Onsongo D, Quinones EJ, Banerjee SK. Simulation and optimization of strained Si |
0.697 | |||
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