| Year |
Citation |
Score |
| 2016 |
Yang X, Hao J, Mao Y, Jin ZQ, Cao R, Zhu CH, Liu XH, Liu C, Ding XL, Wang XD, Chen D, Wu XZ. bFGF promotes migration and induces cancer-associated fibroblasts differentiation of mouse bone mesenchymal stem cells to promote tumor growth. Stem Cells and Development. PMID 27484709 DOI: 10.1089/scd.2016.0217 |
0.362 |
|
| 2006 |
Zhao E, Krithivasan R, Sutton A, Jin Z, Cressler J, El-Kareh B, Balster S, Yasuda H. Corrections to “An Investigation of Low-Frequency Noise in Complementary SiGe HBTs” Ieee Transactions On Electron Devices. 53: 1745-1745. DOI: 10.1109/Ted.2006.877207 |
0.713 |
|
| 2006 |
Zhao E, Krithivasan R, Sutton AK, Jin Z, Cressler JD, El-Kareh B, Balster S, Yasuda H. An investigation of low-frequency noise in complementary SiGe HBTs Ieee Transactions On Electron Devices. 53: 329-338. DOI: 10.1109/Ted.2005.862698 |
0.696 |
|
| 2005 |
Chen YE, Kuo WL, Jin Z, Lee J, Tretiakov YV, Cressler JD, Laskar J, Freeman G. A low-power ka-band Voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology Ieee Transactions On Microwave Theory and Techniques. 53: 1672-1681. DOI: 10.1109/Tmtt.2005.847063 |
0.556 |
|
| 2004 |
Chen T, Kuo WML, Zhao E, Liang Q, Jin Z, Cressler JD, Joseph AJ. On the high-temperature (to 300 °C) characteristics of SiGe HBTs Ieee Transactions On Electron Devices. 51: 1825-1832. DOI: 10.1109/Ted.2004.836779 |
0.625 |
|
| 2004 |
Johansen JA, Jin Z, Cressler JD, Cui Y, Niu G, Liang Q, Rieh JS, Freeman G, Ahlgren D, Joseph A. On the scaling limits of low-frequency noise in SiGe HBTs Solid-State Electronics. 48: 1897-1900. DOI: 10.1016/J.Sse.2004.05.032 |
0.698 |
|
| 2003 |
Jin Z, Johansen JA, Cressler JD, Reed RA, Marshall PW, Joseph AJ. Using Proton Irradiation to Probe the Origins of Low-Frequency Noise Variations in SiGe HBTs Ieee Transactions On Nuclear Science. 50: 1816-1820. DOI: 10.1109/Tns.2003.820739 |
0.631 |
|
| 2003 |
Jin Z, Cressler JD, Niu G, Joseph AJ. Impact of geometrical scaling on low-frequency noise in SiGe HBTs Ieee Transactions On Electron Devices. 50: 676-682. DOI: 10.1109/Ted.2003.810483 |
0.625 |
|
| 2003 |
Jin Z, Cressler JD, Niu G, Marshall PW, Kim HS, Reed R, Joseph AJ. Proton response of low-frequency noise in 0.20 μ m 90 GHz fT UHV/CVD SiGe HBTs Solid-State Electronics. 47: 39-44. DOI: 10.1016/S0038-1101(02)00251-4 |
0.62 |
|
| 2002 |
Tang J, Niu G, Jin Z, Cressler JD, Zhang S, Joseph AJ, Harame DL. Modeling and characterization of SiGe HBT low-frequency noise figures-of-merit for RFIC applications Ieee Transactions On Microwave Theory and Techniques. 50: 2467-2473. DOI: 10.1109/Tmtt.2002.804519 |
0.513 |
|
| 2002 |
Zhang G, Cressler JD, Lanzerotti L, Johnson R, Jin Z, Zhang S, Niu G, Joseph A, Harame D. Electric field effects associated with the backside Ge profile in SiGe HBTs Solid-State Electronics. 46: 655-659. DOI: 10.1016/S0038-1101(01)00333-1 |
0.428 |
|
| 2001 |
Niu G, Jin Z, Cressler JD, Rapeta R, Joseph AJ, Harame D. Transistor noise in SiGe HBT RF technology Ieee Journal of Solid-State Circuits. 36: 1424-1427. DOI: 10.1109/4.944672 |
0.621 |
|
| 2001 |
Jin Z, Niu G, Cressler JD, Marshall CJ, Marshall PW, Kim HS, Reed RA, Harame DL. 1/f noise in proton-irradiated SiGe HBTs Ieee Transactions On Nuclear Science. 48: 2244-2249. DOI: 10.1109/23.983203 |
0.593 |
|
| 2001 |
Cressler JD, Hamilton MC, Krithivasan R, Ainspan H, Groves R, Niu G, Zhang S, Jin Z, Marshall CJ, Marshall PW, Kim HS, Reed RA, Palmer MJ, Joseph AJ, Harame DL. Proton radiation response of SiGe HBT analog and RF circuits and passives Ieee Transactions On Nuclear Science. 48: 2238-2243. DOI: 10.1109/23.983202 |
0.651 |
|
| 2001 |
Niu G, Juraver JB, Borgarino M, Jin Z, Cressler JD, Plana R, Llopis O, Mathew S, Zhang S, Clark S, Joseph AJ. Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs Solid-State Electronics. 45: 107-112. DOI: 10.1016/S0038-1101(00)00233-1 |
0.618 |
|
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