| Year |
Citation |
Score |
| 2017 |
Mazur YI, Dorogan VG, Dias L, Fan D, Schmidbauer M, Ware ME, Zhuchenko ZY, Kurlov SS, Tarasov GG, Yu S-, Marques GE, Salamo GJ. Luminescent properties of GaAsBi/GaAs double quantum well heterostructures Journal of Luminescence. 188: 209-216. DOI: 10.1016/J.Jlumin.2017.04.025 |
0.421 |
|
| 2016 |
Steele JA, Lewis RA, Horvat J, Nancarrow MJ, Henini M, Fan D, Mazur YI, Schmidbauer M, Ware ME, Yu SQ, Salamo GJ. Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi. Scientific Reports. 6: 28860. PMID 27377213 DOI: 10.1038/Srep28860 |
0.537 |
|
| 2015 |
Steele JA, Horvat J, Lewis RA, Henini M, Fan D, Mazur YI, Dorogan VG, Grant PC, Yu SQ, Salamo GJ. Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures. Nanoscale. PMID 26584058 DOI: 10.1039/C5Nr06676J |
0.52 |
|
| 2014 |
Steele JA, Lewis RA, Henini M, Lemine OM, Fan D, Mazur YI, Dorogan VG, Grant PC, Yu SQ, Salamo GJ. Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration. Optics Express. 22: 11680-9. PMID 24921290 DOI: 10.1364/Oe.22.011680 |
0.506 |
|
| 2014 |
Mazur YI, Dorogan VG, de Souza LD, Fan D, Benamara M, Schmidbauer M, Ware ME, Tarasov GG, Yu SQ, Marques GE, Salamo GJ. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures. Nanotechnology. 25: 035702. PMID 24346504 DOI: 10.1088/0957-4484/25/3/035702 |
0.555 |
|
| 2014 |
Grant PC, Fan D, Mosleh A, Yu SQ, Dorogan VG, Hawkridge ME, Mazur YI, Benamara M, Salamo GJ, Johnson SR. Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4868110 |
0.555 |
|
| 2014 |
Mazur YI, Teodoro MD, Dias De Souza L, Ware ME, Fan D, Yu SQ, Tarasov GG, Marques GE, Salamo GJ. Low temperature magneto-photoluminescence of GaAsBi /GaAs quantum well heterostructures Journal of Applied Physics. 115. DOI: 10.1063/1.4869803 |
0.369 |
|
| 2013 |
Fan D, Grant PC, Yu SQ, Dorogan VG, Hu X, Zeng Z, Li C, Hawkridge ME, Benamara M, Mazur YI, Salamo GJ, Johnson SR, Wang ZM. MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4792518 |
0.574 |
|
| 2013 |
Zeng Z, Morgan TA, Fan D, Li C, Hirono Y, Hu X, Zhao Y, Lee JS, Wang J, Wang ZM, Yu S, Hawkridge ME, Benamara M, Salamo GJ. Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction Aip Advances. 3. DOI: 10.1063/1.4815972 |
0.531 |
|
| 2013 |
Fan D, Zeng Z, Dorogan VG, Hirono Y, Li C, Mazur YI, Yu SQ, Johnson SR, Wang ZM, Salamo GJ. Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy Journal of Materials Science: Materials in Electronics. 24: 1635-1639. DOI: 10.1007/S10854-012-0987-Z |
0.554 |
|
| 2012 |
Fan D, Zeng Z, Hu X, Dorogan VG, Li C, Benamara M, Hawkridge ME, Mazur YI, Yu SQ, Johnson SR, Wang ZM, Salamo GJ. Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4764556 |
0.568 |
|
| 2010 |
Li Z, Wu J, Wang ZM, Fan D, Guo A, Li S, Yu SQ, Manasreh O, Salamo GJ. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications. Nanoscale Research Letters. 5: 1079-84. PMID 20672090 DOI: 10.1007/S11671-010-9605-2 |
0.566 |
|
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