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Anand V. Sampath, Ph.D. - Publications

Affiliations: 
2002 Boston University, Boston, MA, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Sampath AV, Chen Y, Zhou Q, Enck RW, Garrett GA, Vanmil BL, Chung RB, Reed ML, Shen H, Campbell JC, Wraback M. AlGaN/SiC heterojunction ultraviolet photodiodes Materials Science Forum. 858: 1206-1209. DOI: 10.4028/Www.Scientific.Net/Msf.858.1206  0.313
2015 Enck RW, Woodward N, Gallinat C, Metcalfe G, Sampath AV, Shen H, Wraback M. Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 434-438. DOI: 10.1002/Pssc.201400208  0.33
2011 Sampath AV, Garrett GA, Enck RW, Rotella P, Shen H, Wraback M. Suppression of non-radiative effects in AlGaN through nanometer scale compositional inhomogeneities Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1534-1538. DOI: 10.1002/pssc.201001167  0.318
2008 Nikishin S, Borisov B, Kuryatkov V, Holtz M, Garrett GA, Sarney WL, Sampath AV, Shen H, Wraback M, Usikov A, Dmitriev V. Deep UV light emitting diodes grown by gas source molecular beam epitaxy Journal of Materials Science: Materials in Electronics. 19: 764-769. DOI: 10.1007/S10854-007-9405-3  0.314
2007 Wraback M, Garrett GA, Sampath AV, Shen H. Optimization of nanoscale phenomena in AlGaN for improved UV emitters Proceedings of Spie - the International Society For Optical Engineering. 6479. DOI: 10.1117/12.699181  0.302
2005 Garrett GA, Collins CJ, Sampath AV, Shen H, Wraback M, LeBoeuf SF, Flynn J, Brandes G. Defect density dependence of carrier dynamics in A1GaN multiple quantum wells grown on GaN substrates and templates Physica Status Solidi C: Conferences. 2: 2332-2336. DOI: 10.1002/Pssc.200461600  0.361
2002 Sampath AV, Bhattacharyya A, Singh R, Eddy CR, Lamarre P, Stacey WF, Morris RS, Moustakas TD. Growth and Fabrication of High Reverse Breakdown Heterojunction n-Gan: p-6H-Sic Diodes Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L6.34  0.687
2002 Bhattacharyya A, Iyer S, Iliopoulos E, Sampath AV, Cabalu J, Moustakas TD, Friel I. High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1229-1233. DOI: 10.1116/1.1482070  0.664
2002 Sampath AV, Bhattacharyya A, Singh R, Eddy CR, Lamarre P, Stacey WF, Morris RS, Moustakas TD. Growth and fabrication of high reverse breakdown heterojunction n-GAN: p-6H-SiC diodes Materials Research Society Symposium - Proceedings. 743: 449-454.  0.333
2001 Moustakas TD, Iliopoulos E, Sampath AV, Ng HM, Doppalapudi D, Misra M, Korakakis D, Singh R. Growth and device applications of III-nitrides by MBE Journal of Crystal Growth. 227: 13-20. DOI: 10.1016/S0022-0248(01)00625-X  0.778
2001 Sampath AV, Bhattacharyya A, Sandeep I, Ng HM, Iliopoulos E, Moustakas TD. MBE growth of GaN using NH3 and plasma sources Materials Research Society Symposium - Proceedings. 639.  0.721
2000 Misra M, Sampath AV, Moustakas TD. Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 5: 584-590. DOI: 10.1557/S1092578300004798  0.679
2000 Sampath AV, Misra M, Seth K, Fedyunin Y, Ng HM, Iliopoulos E, Feit Z, Moustakas TD. A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates Mrs Internet Journal of Nitride Semiconductor Research. 5: 577-583. DOI: 10.1557/S1092578300004786  0.775
2000 Misra M, Sampath AV, Moustakas TD. Investigation of vertical transport in n-GaN films grown by molecular beam epitaxy using Schottky barrier diodes Applied Physics Letters. 76: 1045-1047. DOI: 10.1063/1.125933  0.714
2000 Ryan P, Chao YC, Downes J, McGuinness C, Smith KE, Sampath AV, Moustakas TD. Surface electronic structure of p-type GaN(0001̄) Surface Science. 467. DOI: 10.1016/S0039-6028(00)00820-7  0.525
2000 Misra M, Sampath AV, Moustakas TD. Investigation of vertical transport in n-GaN films grown by molecular beam epitaxy using Schottky barrier diodes Applied Physics Letters. 76: 1045-1047.  0.362
2000 Sampath AV, Iliopoulos E, Seth K, Fedyunin Y, Misra M, Ng HM, Lamarre P, Feit Z, Moustakas TD. GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN/sapphire substrates Proceedings of Spie - the International Society For Optical Engineering. 3948: 311-318.  0.758
2000 Sampath AV, Misra M, Seth K, Fedyunin Y, Ng HM, Iliopoulos E, Feit Z, Moustakas TD. A comparative study of GaN diodes grown by MBE on sapphire and HVPE-GaN/sapphire substrates Materials Research Society Symposium - Proceedings. 595.  0.766
2000 Sampath AV, Misra M, Seth K, Fedyunin Y, Ng HM, Iliopoulos E, Feit Z, Moustakas TD. A comparative study of GaN diodes grown by MBE on sapphire and HVPE-GaN/sapphire substrates Materials Research Society Symposium - Proceedings. 595.  0.766
2000 Misra M, Sampath AV, Moustakas TD. Vertical transport properties of gan schottky diodes grown by molecular beam epitaxy Materials Research Society Symposium - Proceedings. 595.  0.366
1999 Misra M, Doppalapudi D, Sampath AV, Moustakas TD, McDonald PH. Generation Recombination Noise in GaN Photoconducting Detectors Mrs Internet Journal of Nitride Semiconductor Research. 4: 817-822. DOI: 10.1557/S1092578300003471  0.627
1999 Misra M, Sampath AV, Moustakas TD. Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W11.2  0.679
1999 Sampath AV, Misra M, Seth K, Fedyunin Y, Ng HM, Iliopoulos E, Feit Z, Moustakas TD. A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W11.1  0.783
1998 Misra M, Doppalapudi D, Sampath AV, Moustakas TD, McDonald PH. Generation Recombination Noise in GaN Photoconducting Detectors Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G7.8  0.633
1997 Moustakas TD, Singh R, KOrakakis D, Doppalapudi D, Ng Hm, Sampath A, Iliopoulos E, Misra M. Phase Separation and Atomic Ordering in AlGaInN Alloys Mrs Proceedings. 482: 193. DOI: 10.1557/Proc-482-193  0.674
1997 Sampath A, Ng HM, Korakakis D, Moustakas TD. Metal Contacts to n- Al X Ga 1-x N Mrs Proceedings. 482: 1095. DOI: 10.1557/Proc-482-1095  0.58
1996 Misra M, Korakakis D, Singh R, Sampath A, Moustakas TD. Photoconducting Properties of Ultraviolet Detectors Based on GaN and Al1-xGaxN Films Grown by ECR-MBE Mrs Proceedings. 449. DOI: 10.1557/Proc-449-597  0.677
1995 Korakakis D, Sampath A, Ng HM, Morales G, Goepfert ID, Moustakas TD. Growth and doping of GaN directly on 6H-SiC by MBE Mrs Proceedings. 395: 151. DOI: 10.1557/Proc-395-151  0.616
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