| Year |
Citation |
Score |
| 2016 |
Yu H, Kim D, Lee J, Baek S, Singh R, So F. High-gain infrared-to-visible upconversion light-emitting phototransistors Nature Photonics. 10: 129-134. DOI: 10.1038/Nphoton.2015.270 |
0.351 |
|
| 2009 |
Onushkin GA, Hong S, Lee J, Park J, Son J, Kim M, Park Y. Local electroluminescence and time-resolved photoluminescence study of InGaN light-emitting diodes Applied Physics Letters. 95: 101904. DOI: 10.1063/1.3224896 |
0.467 |
|
| 2004 |
Eliseev PG, Lee J, Osinski M. Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity Kvantovaya Elektronika. 34: 1127-1132. DOI: 10.1070/Qe2004V034N12Abeh002788 |
0.645 |
|
| 2003 |
Lee J, Eliseev PG, Osinski M, Lee D, Florescu DI, Guo S, Pophristic M. InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers Ieee Journal of Selected Topics in Quantum Electronics. 9: 1239-1245. DOI: 10.1109/Jstqe.2003.819509 |
0.663 |
|
| 2002 |
Guo S, Pophristic M, Lee DS, Peres B, Ferguson IT, Lee J, Osinski M. Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diode application Proceedings of Spie - the International Society For Optical Engineering. 4776: 18-25. DOI: 10.1117/12.457171 |
0.591 |
|
| 2001 |
El-Emawy A, Cao H, Zhmayev E, Lee J, Zubia D, Osi?ski M. MOCVD Growth of InNxAs1?x on GaAs Using Dimethylhydrazine Physica Status Solidi (B). 228: 263-267. DOI: 10.1002/1521-3951(200111)228:1<263::Aid-Pssb263>3.0.Co;2-R |
0.328 |
|
| 2000 |
Eliseev PG, Osinski M, Lee J, Sugahara T, Sakai S. Band-tail model and temperature-induced blue-shift in photoluminescence spectra of In x Ga 1-x N grown on sapphire Journal of Electronic Materials. 29: 332-341. DOI: 10.1007/S11664-000-0073-9 |
0.63 |
|
| 1999 |
Barton DL, Osinski M, Perlin P, G. Eliseev P, Lee J. Single-quantum well InGaN green light emitting diode degradation under high electrical stress Microelectronics Reliability. 39: 1219-1227. DOI: 10.1016/S0026-2714(99)00010-4 |
0.606 |
|
| 1998 |
Osiński M, Lee J, Barton DL. Role of Nanopipes in Degradation of AlGaN/InGaN/GaN Devices Operating at High Voltage Mrs Proceedings. 512: 205. DOI: 10.1557/Proc-512-205 |
0.536 |
|
| 1998 |
Osiński M, Barton DL, Perlin P, Lee J. Effects of high electrical stress on GaN/InGaN/AlGaN single-quantum-well light-emitting diodes Journal of Crystal Growth. 189: 808-811. DOI: 10.1016/S0022-0248(98)00299-1 |
0.609 |
|
| 1998 |
Osiński M, Perlin P, Eliseev PG, Lee J, Smagley VA. Comprehensive studies of light emission from GaN/InGaN/AlGaN single-quantum-well structures Journal of Crystal Growth. 189: 803-807. DOI: 10.1016/S0022-0248(98)00298-X |
0.636 |
|
| 1997 |
Eliseev PG, Perlin P, Lee J, Osiński M. Blue Temperature-Induced Shift And Band-Tail Emission In Ingan-Based Light Sources Applied Physics Letters. 71: 569-571. DOI: 10.1063/1.119797 |
0.682 |
|
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